TO-3P(Q) Description Symbol Characteristics Unit Remarks. Tch 150 C Tstg -55 to C
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1 FMH9N9E Super FAP-E 3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (.±.V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Outline Drawings [mm] TO-3P(Q) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc= C (unless otherwise specified) Equivalent circuit schematic Gate(G) Drain(D) Source(S) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 9 V VDSX 9 V VGS = -3V Continuous Drain Current ID ±9 A Pulsed Drain Current IDP ±36 A Gate-Source Voltage VGS ±3 V Repetitive and Non-Repetitive Maximum AvalancheCurrent IAR 9 A Note* Non-Repetitive Maximum Avalanche Energy EAS 6.3 mj Note* Repetitive Maximum Avalanche Energy EAR. mj Note*3 Peak Diode Recovery dv/dt dv/dt. kv/µs Note* Peak Diode Recovery -di/dt -di/dt A/µs Note* Maximum Power Dissipation PD. Ta= C W Tc= C Operating and Storage Temperature range Tch C Tstg - to + C Electrical Characteristics at Tc= C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=µA, VGS=V V Gate Threshold Voltage VGS (th) ID=µA, VDS=VGS 3... V Zero Gate Voltage Drain Current IDSS VDS=9V, VGS=V Tch= C - - VDS=7V, VGS=V Tch= C - - µa Gate-Source Leakage Current IGSS VGS=±3V, VDS=V - na Drain-Source On-State Resistance RDS (on) ID=.A, VGS=V -.6. Ω Forward Transconductance gfs ID=.A, VDS=V. - S Input Capacitance Ciss VDS=V - 7 Output Capacitance Coss VGS=V - pf Reverse Transfer Capacitance Crss f=mhz - 7 Turn-On Time td(on) Vcc=6V tr VGS=V - 3 Turn-Off Time td(off) ID=.A - 6 tf RG=Ω - 3 ns Total Gate Charge QG - 7 Vcc=V Gate-Source Charge QGS - 3 ID=9A Gate-Drain Charge QGD - 6 VGS=V Gate-Drain Crossover Charge QSW nc Avalanche Capability IAV L=.mH, Tch= C A Diode Forward On-Voltage VSD IF=9A, VGS=V, Tch= C V Reverse Recovery Time trr IF=9A, VGS=V µs Reverse Recovery Charge Qrr -di/dt=a/µs, Tch= C - - µc Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to case.6 C/W Rth (ch-a) Channel to ambient. C/W GATE DRAIN SOURCE Note * : Tch C Note * : Stating Tch= C, IAS=3.6A, L=8.mH, Vcc=9V, RG=Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche current' graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note * : IF -ID, -di/dt=a/µs, Vcc BVDSS, Tch C. Note * : IF -ID, dv/dt=.kv/µs, Vcc BVDSS, Tch C.
2 [ FMH9N9E Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=(Single pulse),tc= C t= μs μs 6 μs PD [W] ms 8 - Power loss waveform : Square waveform P D t 7 Tc [ C] Typical Output Characteristics ID=f(VDS):8 μs pulse test,tch= C Typical Transfer Characteristic ID=f(VGS):8μs pulse test,vds=v,tch= C V 7.V 6.V 6.V ID[A] VGS=.V. 8 6 Typical Transconductance gfs=f(id):8 μs pulse test,vds=v,tch= C VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):8 μs pulse test,tch= C.8 VGS=.V 6V [S] gfs R DS(on) Ω ].6. 6.V 7V V V
3 [ FMH9N9E t Drain-Source On-state Resistance RDS(on)=f(Tch):ID=.A,VGS=V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=μA R DS(on) Ω ] max. [V] VGS(th) 3 max. typ. min.. typ Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch= C Tch [ C] Typical Capacitance C=f(VDS):VGS=V,f=MHz Vcc= V V 7V 3 Ciss 8 VGS [V] 6 C [pf] Coss Crss 6 8 Qg [nc] Typical Forward Characteristics of Reverse Diode IF=f(VSD):8 μs pulse test,tch= C Typical Switching Characteristics vs. ID t=f(id):vcc=6v,vgs=v,rg=ω tf td(off) IF [A] [ns] td(on) tr VSD [V] 3 -
4 FMH9N9E 6 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=9V,I(AV)<=9A =3.6A Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D= =.A c) [ C/ W ] - EAV [mj] 3 =9.A Zth(ch t [sec] 7 starting Tch [ C]
5 FMH9N9E WARNING. This Catalog contains the product specifications, characteristics, data, materials, and structures as of December. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications.. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction.. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc.. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright 996- by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
TO-220F(SLS) Description Symbol Characteristics Unit Remarks
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