AUTOMOTIVE GRADE. 68 P C = 25 C Power Dissipation 45 Linear Derating Factor. mj I AR Avalanche Currentc 10 E AR Repetitive Avalanche Energy c 4.
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1 Features l Advanced Planar Technology l Low On-Resistance l ynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * AUTOMOTIVE GRAE G S AUIRFR024N AUIRFU024N HEXFET Power MOSFET V (BR)SS 55V R S(on) max Ω I P Ag escription Specifically designed for Automotive applications, this Cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. S G -Pak AUIRFR024N S G I-Pak AUIRFU024N G S Gate rain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter T C = 25 C Continuous rain Current, V 10V 17 T C = 100 C Continuous rain Current, V 10V 12 A I M Pulsed rain Current ch 68 C = 25 C Power issipation 45 W Linear erating Factor 0.3 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy dh 71 mj I AR Avalanche Currentc 10 A E AR Repetitive Avalanche Energy c 4.5 mj dv/dt Peak iode Recovery dv/dt eh 5.0 V/ns T J Operating Junction and -55 to T STG Storage Temperature Range C 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 3.3 R θja Junction-to-Ambient (PCB mount) ** 50 C/W R θja Junction-to-Ambient 110 HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Max. Units 02/22/11
2 Static Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 55 V V GS = 0V, I = 250µA V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = 1mA R S(on) Static rain-to-source On-Resistance Ω V GS = 10V, I = 10A f V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µA gfs Forward Transconductance 4.5 S V S = 25V, I = 10A h I SS rain-to-source Leakage Current 25 µa V S = 55V, V GS = 0V 250 V S = 44V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 100 na V GS = 20V Gate-to-Source Reverse Leakage -100 V GS = -20V ynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge 20 I = 10A Q gs Gate-to-Source Charge 5.3 nc V S = 44V Q gd Gate-to-rain ("Miller") Charge 7.6 V GS = 10V,See Fig 6 and 13 fh t d(on) Turn-On elay Time 4.9 V = 28V t r Rise Time 34 I = 10A t d(off) Turn-Off elay Time 19 ns R G = 24 Ω, t f Fall Time 27 R = 2.6Ω, See Fig.10Ãfh L Internal rain Inductance 4.5 Between lead, nh 6mm (0.25in.) L S Internal Source Inductance from package 7.5 and center of die contactãg C iss Input Capacitance 370 V GS = 0V C oss Output Capacitance 140 pf V S = 25V C rss Reverse Transfer Capacitance 65 ƒ = 1.0MHz, See Fig.5 iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 17 g MOSFET symbol (Body iode) A showing the I SM Pulsed Source Current integral reverse G 68 (Body iode)ãc p-n junction diode. V S iode Forward Voltage 1.3 V T J = 25 C, I S = 10A, V GS = 0V f t rr Reverse Recovery Time ns T J = 25 C, I F = 10A Q rr Reverse Recovery Charge nc di/dt = 100A/µs fh t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+L) G S S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) V = 25V, starting T J = 25 C, L = 1mH, R G = 25Ω, I AS = 10A. (See Figure 12) ƒ I S 10A, di/dt 280A/µs, V V (BR)SS, T J 175 C Pulse width 300µs; duty cycle 2% This is applied for I-PAK, L S of -PAK is measured between lead and center of die contact. Uses IRFZ24N data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN
3 Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level ES RoHS Compliant PAK I-PAK Yes MSL1 N/A Machine Model Class M2(+/-150V ) AEC-Q Human Body Model Class H1A(+/-500V ) Charged evice Model AEC-Q Class C5(+/-2000V ) AEC-Q Qualification standards can be found at International Rectifier s web site: http// Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage 3
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9 -Pak (TO-252AA) Package Outline imensions are shown in millimeters (inches) -Pak (TO-252AA) Part Marking Information Part Number IR Logo AUFR024N YWWA XX or XX ate Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at 9
10 I-Pak (TO-251AA) Package Outline ( imensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number IR Logo AUFU024N YWWA XX or XX ate Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at
11 -Pak (TO-252AA) Tape & Reel Information imensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEE IRECTION 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm 11
12 Ordering Information Base part Package Type Standard Pack Complete Part Number Form Quantity AUIRFR024N Pak Tube 75 AUIRFR024N Tape and Reel 2000 AUIRFR024NTR Tape and Reel Left 3000 AUIRFR024NTRL Tape and Reel Right 3000 AUIRFR024NTRR AUIRFU024N IPak Tube 75 AUIRFU024N 12
13 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or enhanced plastic. Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR s Technical Assistance Center WORL HEAQUARTERS: 101 N Sepulveda Blvd, El Segundo, California Tel: (310)
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationApplications DSS 150V RDS(on) typ. 12m max. 15m Benefits 85A Absolute Maximum Ratings Symbol Parameter Max. Units
P - 975C IRFS432PbF IRFSL432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationGreen. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z AUIRFZ44ZS D 2 Tube 50 AUIRFZ44ZS Tape and Reel Left 800 AUIRFZ44ZSTRL
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
More informationGreen. Features. I D T C = +25 C (Note 9) 100A 100A. Top View Pin Configuration
Product Summary Green 4V N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features % Unclamped Inductive Switching Ensures More Reliable BV SS 4V R S(ON) max.8mω @ V GS = V 3.mΩ @ V GS = 4.5V I T C = +5 C (Note
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
More informationSymbol Parameter FTP06N65 Units
FTP11N8 N-Channel MOSFET Applications: Automotive DC Motor Control Class D Amplifier Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves
More informationAUIPS1011(S)(R) INTELLIGENT POWER LOW SIDE SWITCH
Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Description The is a three
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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
More informationTop View. Part Number Compliance Case Packaging DMN6066SSD-13 Commercial SO-8 2,500/Tape & Reel DMN6066SSDQ-13 Automotive SO-8 2,500/Tape & Reel
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
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Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationAUTOMOTIVE GRADE. Standard Pack Orderable Part Number AUIRL3705Z TO-220 Tube 50 AUIRL3705Z AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL AUIRL3705ZS D 2 -Pak
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Automotive grade AUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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