P-Channel 150-V (D-S) MOSFET
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1 AM9P P-Channel 5-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -5 PRODUCT SUMMARY r DS(on) V GS = V GS = -4.5V ID(A) Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters ABSOLUTE MAXIMUM RATINGS (T A = 5 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage V DS -5 Gate-Source Voltage V GS ± V Continuous Drain Current a T A =5 C -.9 I D T A =7 C -.8 A Pulsed Drain Current b I DM 5 Continuous Source Current (Diode Conduction) a I S.5 A Power Dissipation a T A =5 C. P D T A =7 C.8 W Operating Junction and Storage Temperature Range T J, T stg -55 to 5 C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= sec Steady State Symbol Maximum Units R θja 66 C/W Notes a. Surface Mounted on x FR4 Board. b. Pulse width limited by maximum junction temperature Preliminary Publication Order Number: DS_AM9P_A
2 AM9P Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = -5 ua - V Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V - V DS = - V, V GS = V, T J = 55 C - ua On-State Drain Current I D(on) V DS = -5 V, V GS = - V -.5 A Drain-Source On-Resistance r DS(on) V GS = - V, I D = -.8 A. V GS = -4.5 V, I D = -.7 A. Ω Forward Transconductance g fs V DS = -5 V, I D = -.5 A. S Diode Forward Voltage V SD I S = -.75 A, V GS = V -.8 V Dynamic Total Gate Charge Q g.4 Gate-Source Charge Q gs V DS = -75 V, V GS = -4.5 V, I D = -.8A. Gate-Drain Charge Q gd.6 Turn-On Delay Time t d(on) V DD = -75 V, R L = 9.8 Ω, Rise Time t r I D = -.8A, Turn-Off Delay Time t d(off) 5 V GEN = - V, R GEN = 6 Ω Fall-Time t f Input Capacitance C iss 4 Output Capacitance C oss V DS = -5 V, V GS = V, f = MHz 4 Reverse Transfer Capacitance C rss nc ns pf Notes a. Pulse test: PW <= us duty cycle <= %. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Preliminary Publication Order Number: DS_AM9P_A
3 ID - Drain Current (A) Capacitance (pf) RDS(on) - On-Resistance (Ω) IS - Source Current (A) RDS(on) - On-Resistance (Ω) ID - Drain Current (A) Analog Power AM9P Typical Electrical Characteristics.8 TJ = 5 C V 4.5V 6V,8V,V ID-Drain Current (A) VGS - Gate-to-Source Voltage (V). On-Resistance vs. Drain Current. Transfer Characteristics 4.5 TJ = 5 C ID = -.8A TJ = 5 C VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V). On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage.5V V,8V,6V 4.5V.5V Ciss F = MHz Coss Crss VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V) 5. Output Characteristics 6. Capacitance Preliminary Publication Order Number: DS_AM9P_A
4 ID Current (A) PEAK TRANSIENT POWER (W) VGS-Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Normalized) Analog Power AM9P Typical Electrical Characteristics VDS = -75V ID = -.8A Qg - Total Gate Charge (nc) 7. Gate Charge 6 TJ - Junction Temperature ( C) 8. Normalized On-Resistance Vs Junction Temperature us us ms ms ms SEC SEC SEC DC Idm limit Limited by RDS... VDS Drain to Source Voltage (V) t TIME (SEC) 9. Safe Operating Area. Single Pulse Maximum Power Dissipation D = Single Pulse T J - T A = P * R θja (t) Duty Cycle, D = t / t..... t TIME (sec). Normalized Thermal Transient Junction to Ambient R θja (t) = r(t) x R θja R θja = 66 C /W P(pk) t t Preliminary 4 Publication Order Number: DS_AM9P_A
5 AM9P Package Information Note:. All Dimension Are In mm.. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed. mm Per Side.. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be.8 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. Preliminary 5 Publication Order Number: DS_AM9P_A
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NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
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A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
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More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
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More informationFeatures S 1. TA=25 o C unless otherwise noted
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