Cree EZ400-n LED Data Sheet CxxxEZ400-Sxxx00-2

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1 Cree EZ4-n LED Data Sheet CxxxEZ4-Sxxx-2 Cree s EZBright LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 17 microns in height. Cree s EZ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES EZBright Power Chip LED Rf Performance 15 ma 45 & 46 nm 75 mw 15 ma - 47 nm 25 mw 15 ma nm Lambertian Radiation Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach Low Forward Voltage 3.5 V Typical at 15 ma Single Wire Bond Structure Maximum DC Forward Current - 2 ma Dielectric Passivation Across Epi Surface APPLICATIONS General Illumination Automobile Aircraft Decorative Lighting Task Lighting Outdoor Illumination White LEDs Crosswalk Signals Television Backlighting CxxxEZ4-Sxxx Chip Diagram Top View Bottom View Die Cross Section Data Sheet: CPR3ED Rev. - EZBright LED Chip 38 x 38 μm 2 Backside Metallization Cathode (-) Gold Bond Pad 112 μm t = 17 μm Dielectric Passivation Anode (+); 3 μm AuSn Subject to change without notice. 1

2 Maximum Ratings at T A = 25 C Note 1 DC Forward Current CxxxEZ4-Sxxx-2 2 ma Peak Forward Current 35 ma Note 3 LED Junction Temperature 145 C Reverse Voltage Operating Temperature Range Storage Temperature Range 5 V -4 C to +1 C -4 C to +12 C Typical Electrical/Optical Characteristics at T A = 25 C, If = 15 ma Note 2 Part Number Forward Voltage (V F, V) Reverse Current [I(Vr=5 V), μa] Full Width Half Max (λ D, nm) Min. Typ. Max. Max. Typ. C45EZ4-Sxxx C46EZ4-Sxxx C47EZ4-Sxxx C527EZ4-Sxxx Mechanical Specifications CxxxEZ4-Sxxx-2 Description Dimension Tolerance P-N Junction Area (µm) 35 x 35 ±4 Chip Area (µm) 38 x 38 ±4 Chip Thickness (µm) 17 ±25 Top Au Bond Pad Diameter (µm) 112 ±15 Au Bond Pad Thickness (µm) 3. ±1. Back Contact Metal Area (µm) 38 x 38 ±4 Back Contact Metal Thickness (µm) 3. ±1. Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325 C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 15 ma within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. 3. This peak forward current specification is based on a 4-ms pulse width at a 1/5-duty cycle with a junction temperature of 65 C. Copyright 29 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ4 are trademarks of 2 CPR3ED Rev. -

3 Standard Bins for CxxxEZ4-Sxxx-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ4-Sxxx-2) orders may be filled with any or all bins (CxxxEZ4-xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 15 ma. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C45EZ4-S9-2 C45EZ C45EZ C45EZ C45EZ mw C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ nm nm 45 nm nm 455 nm C46EZ4-S9-2 C46EZ C46EZ C46EZ C46EZ mw C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ nm nm 46 nm nm 465 nm C47EZ4-S75-2 C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ mw 465 nm nm 47 nm nm 475 nm C527EZ4-S25-2 C527EZ C527EZ C527EZ mw C527EZ C527EZ C527EZ mw C527EZ C527EZ C527EZ mw 52 nm 525 nm 53 nm 535 nm Copyright 29 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ4 are trademarks of 3 CPR3ED Rev. -

4 Characteristic Curves These are representative measurements for the EZBright4. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage Relative Light Intensity vs Junction Temperature 2 1% Relative Light Intensity 95% 9% 85% 8% 75% 7% % Vf (V) 15% Relative Intensity vs. Forward Current.1 Voltage Shift vs Junction Temperature 125%. Relative Intensity 1% 75% 5% Voltage Shift (V) % -.5 % Wavelength Shift vs. Forward Current Shift vs Junction Temperature 16 6 DW Shift (nm) Shift (nm) Copyright 29 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ4 are trademarks of 4 CPR3ED Rev. -

5 Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright 29 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ4 are trademarks of 5 CPR3ED Rev. -