Datasheet. AH3535LC-1LEIX 1W/3W 3535 IR LED Lambertian

Transcription

1 Datasheet AH3535LC-1LEIX 1W/3W 3535 IR LED Lambertian

2 Features 1W/3W 3535 Al2O3 Ag-plating Ceramic Package Half Angle (2θ1/2) : 125 Silicone Compression Molding Lens Vertical Chips Main Applications Plant Lighting Industrial Lighting Medical Lighting Special Lighting Description This LED is one of the smallest high power LED footprint available by All Brite, has offered extended solid-state lighting design possibilities. It is designed with All Brite own Patents and using copper lead frame, the best thermal material of the world. It matches the JEDEC Level 1 MSL sensitivity level and suitable for SMD process, Pb free reflow soldering capability, and full compliance with EU Reduction of Hazardous Substances (RoHS) legislation.

3 Emitter Mechanical Dimensions Anode Cathode Bottom Layout Anode Dimension Recommended Solder Pad Adobe Cathode Slug Circuit Diagram Notes: 1. All dimensions are in millimeters. 2. Tolerance is ±0.25mm.

4 Electrical/Optical Characteristics (Ta=25 ) Parameter Symbol Typ. Unit Condition Forward Voltage VF 1-4 V Dominant Wavelength WLP nm Viewing Angle [1] 2θ1/ deg Luminous Flux Φe mw IF=700 ma Thermal resistance (junction to solder point) Temperature coefficient of Voltage Rth(j-s) /W VF/ T mv/ Reverse leakage Current IR μa VR=5 V Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Ratings Unit Power Dissipation Pd 1-3 mw DC Forward Current IF 350 ma Max DC Forward Current IF(Max DC) 700 ma Max Pulsed Forward Current[2] IF(Max Pulsed) 1000 ma/ LED Junction Temperature TJ 120 Reverse Voltage VR 5 V Operating Temp. Topr 30 ~ +80 Storage Temp. Tstg 40 ~ +100 Note: [1] Tolerance Θ:10 [2] 1/10 Duty Cycle 0.1ms Pulse Width

5 Flux Characteristics Radiation Pattern Lambertian Part Number Radiant Flux (mw) Emitter Infrared 660 AH3535LC-1LEI Infrared 740 AH3535LC-1LEI Infrared 850 AH3535LC-1LEI Electrical Characteristics Forward Voltage VF (V) Typ. Infrared Infrared Infrared Optical Characteristics P/N Peak Wavelength (nm) Viewing Angle (degrees) 2 θ1/2 AH3535LC-1LEI6 Infrared AH3535LC-1LEI7 Infrared AH3535LC-1LEI8 Infrared

6 Peak Wavelength Bin Structure Bin Code Peak Wavelength (nm) DQ DS SA Infrared 660 SC SW SG SI SK Radiant Flux Bin Structure Bin Code Radiant Flux (mw) AM AN AO AP AQ AR AS Infrared 660 AT AU AV AW AX AY AZ BA BB

7 Forward Voltage Bin Structure Bin Code Forward Voltage (V) Infrared 660 A B C D E F G H I

8 Peak Wavelength Bin Structure Bin Code Peak Wavelength (nm) JA JC JE JG JI JJ JM JO JQ Infrared 740 JS KA KC KE KG KI KJ KM KO KQ KS

9 Radiant Flux Bin Structure Bin Code Radiant Flux (mw) AM AN AO AP AQ AR AS Infrared 740 AT AU AV AW AX AY AZ BA BB

10 Forward Voltage Bin Structure Bin Code Forward Voltage (V) Infrared 740 A B C D E F G H I

11 Peak Wavelength Bin Structure Bin Code Peak Wavelength (nm) IA IC IE IG II IJ IM IO IQ Infrared 850 IS FA FC FE FG FI FJ FM FO FQ FS

12 Radiant Flux Bin Structure Bin Code Radiant Flux (mw) AM AN AO AP AQ AR AS Infrared 850 AT AU AV AW AX AY AZ BA BB

13 Forward Voltage Bin Structure Bin Code Forward Voltage (V) Infrared 850 A B C D E F G H I

14 Relative intensity (350mA normalize to 1) Current (ma) Relative intensity AH3535LC-1LEIX Spectrum distribution Wavelength (nm) Characteristic curves Current (ma) Forward Voltage (VF) Fig.1 Radiant flux (Φe) vs Current (ma) Fig.2 Current (IF) vs Voltage (VF)

15 Relative intensity AH3535LC-1LEIX Typical radiation pattern View angle (degrees) Relative intensity

16 Carrier Tape Dimensions Cathode Anode Notes: All dimensions are in millimeters.

17 Emitter Reel Packaging Notes: All dimensions are in millimeters. Label Form Specification All Brite International P/N: XXXX CAT: U HUE: B1 VF: 51 Quantity: 1000 PCS Lot No: ACO Date: 2012/09/28 ROHS QC P/N : Part Number CAT: Brightness Rank HUE: Rank Vf: Forward Voltage Rank Quantity: Packing Quantity Lot No: Lot Number Date: Date Note: Above specification may be changed without notice. We will reserve authority on material change for above specification.

18 Typical Reflow Soldering Profile Reflow Soldering Temperature Profile Profile Feature Average Ramp-Up Rate (Tsmax to TP) Preheat Temperature Min (TSmin) Temperature Max (TSmax) Time (Tsmin to TSmax) Typical parameters 3 C / second max. 150 C 200 C seconds Time maintained above Temperature (TL) Time (TL) 217 C seconds Peak/Classification Temperature (Tp) 240 C Time within 5 C of Actual Peak Temperature (Tp) Ramp-Down Rate Time 25 C to Peak Temperature 5 seconds 6 C/second max. 8 minutes max.

19 Precaution for Use In order to avoid absorption of moisture, it is recommended that the products are stored in the dry box (or desiccators ) with a desiccants. Alternatively the following environment is recommended: Storage temperature : 5 C~30 C Humidity:60% HR max. If the storage conditions are of high humidity the product should be dried before use. Recommended drying conditions: 12 hours at 60 C±5 C. Any mechanical force or any excess vibration should be avoid during the cooling process after soldering. Reflow rapidly cooling should be avoided. Components should not be mounted on distorted Printed Circuit Boards. Devices should not contact with any types of fluid, such as water, oil, organic solvents. etc. The maximum ambient temperature should be taken into consideration when determining the operating current. Devices should be soldered within 7 days after opening the moisture-proof packing. Repack unused product in anti-moisture packing, fold to close any opening and store in a dry place. The appearance and specifications of devices may be modified for improvement without notice. ESD Precautions Static Electricity and surge damages LEDs. It is recommended that wrist bands or anti-electrostatic gloves be used when handing the LEDs. All devices, equipment and machinery should be properly grounded. This product must be driven by constant power supplier.