ETi-KA358A-BL LED Chip of Specifications

Transcription

1 ETi-KA358A-BL LED Chip of Specifications Elec-Tech International Co., Ltd. SPECIFICATIONS No. : Product: ETi-KA358A-BL VERSION: V1.0 Date:

2 ETi-KA358A-BL Introduction ETi-KA358A-BL LEDs are high power blue LED emitters based on ETi s proprietary InGaN on pattern sapphire substrates and advanced device fabrication technology to produce high quality and reliable solid state light source. The ETi-KA358A-BL LEDs delivers a low forward voltage, resulting in a highly efficient chip. The epitaxy side-down design allows for a direct die-attach eutectic process which eliminates wire bonding and results in superior heat dissipation. Features Application power 1.5W. Drive current 0.5A Flip Chip structure for superior heat dissipation Bond pad designed for die attach via eutectic process, eliminating the need for wire bonds High drive current up to 0.7A Low typical forward voltage of 2.9V Low thermal resistance Applications High-power LED emitters Chip on board applications Remote phosphor applications General lighting LCD display backlighting Automotive lighting Electrical and Optical Characteristics for ETi-KA358A-BL Parameters Conditions Min Typ Max Unit Forward Voltage If=350mA V If=1uA V Dominant Wavelength If=350mA nm Radiometric Power If=350mA mw Reverse Current Vr=5.0V ua Notes: 1. Recommend ESD protection during handling and shipping the chip. 2. LED chips need to be stored in nitrogen atmosphere. 3. All parameters and based on ETi standard probing equipments. 4. At dominant wavelength of 450nm. Radiometric power values are based on Wafer level test. 5. Radiometric power measurement allows a tolerance of ±8%. 6.Dominant wavelength is controlled of ±1nm, and the forward voltage is dominated in ±0.05V. Copyright 2014

3 Mechanical Dimensions Figure 1. Mechanical Dimensions, ETi-KA358A-BL Flip Chip Notes: 1. Drawing is not scale. 2. All dimensions are in micrometers. 3. Top finish is sapphire. 4. Cathode and anode pad metal are AuSn. Absolute Maximum Ratings Parameter Maximum Performance DC Forward Current 700mA Peak Pulsed Forward Current 1000mA LED Junction Temperature 135 Reverse Voltage ETi-KA358A-BL is not designed to be driven in reverse bias Notes: 1. Proper current de-rating must be observed to maintain the junction temperature below the specified maximum junction temperature. 2. Pulsed operation with a peak drive current of 1000 ma is acceptable if the pulse on-time is 5ms per cycle and the duty cycle is 50%. Copyright 2014

4 Dominant Wavelength Shift (nm) Forward Current (ma) SIRIUS-KIK3535 Characteristic Curves Forward Current vs. Forward Voltage Forward Voltage (V) Figure 2. Forward current vs forward voltage at Ta=25 Dominant Wavelength Shift vs. Forward Current Forward Current (ma) Figure 3. Dominant wavelength shift vs forward current at Ta=25 Copyright 2014

5 Relative Spectral Distribution Relative Radiometric Power SIRIUS-KIK3535 Typical Relative Radiometric Power vs. Forward Current Forward Current(mA) Figure 4. Typical relative radiometric power vs forward current at Ta=25 Relative Spectral Power Distribution vs. Wavelength Wavelength(nm) Figure 5. Relative spectral power distribution at Ta=25,If=350mA Copyright 2014

6 Relative Radiometric Power Forward Voltage(V) SIRIUS-KIK3535 Forward Voltage vs. Junction Temperature mA 700mA 1000mA Junction Temperature( ) Figure 6. Forward voltage vs. junction temperature at If = 350 ma/700ma/1000ma. Relative Radiometric Power vs. Junction Temperature mA 700mA 1000mA Junction Temperature( ) Figure 7. Relative radiometric power vs. junction temperature at If = 350 ma/700ma/1000ma. Copyright 2014

7 Radiation Pattern % % % % % % 90 Figure 8. Typical polar radiation pattern. Copyright 2014

8 Bin Structure and Ordering Code for ETi-KA358A-BL ETi-KA358A-BL is characterized at Ta=25, If=350mA and sorted on bin sheets. A specific bin sheet only contains ETi-KA358A-BL within a single bin for dominant wavelength, radiometric power and forward voltage. When ordering, please specify the required Bin using the following Code. Dominant Wavelength (nm) Radiometric Power (mw) Forward Voltage (V) Code Min. Max. Code Min. Max. Code Min. Max. BA FJ BB FK CA FL CB FM DA NA NA DB NA NA Notes for Table : 1. Radiometric power values are based on singulated die on blue tape. The availability of flux bins will vary depending on dominant wavelength. Copyright 2014

9 Chip Arrangement on the Blue Bin Tape ETi-KA358A-BL is arrayed into 60mm X 60mm area in the middle of blue bin tape. Figure9. Chip arrangement on the blue bin tape There are two ways to identify chip s anode and cathode. 1. Bin Tape Label With the bin tape label on the bottom left corner of the tape, LEDs are placed onto the bin tape with the cathode towards the bin tape label. 2. Chip Array Gap With the gap located at the top right corner of the bin tape, LEDs are placed onto the bin tape with the anode towards the array gap. Copyright 2014

10 Packaging The diagrams below show the packaging and labels ETi uses to ship ETi-KA358A-BL chips. ETi-KA358A-BL chips are shipped in blue sheet loaded on a bag. Label with ETi Bin Code, QTY, VF on the bag Label on the blue sheet Blue Sheet Label on the antistatic bag Seal Antistatic bag Antistatic bag would put in the box Label on the box Label Eti Chips Copyright 2014