Si9986. Buffered H-Bridge. Vishay Siliconix. RoHS* COMPLIANT DESCRIPTION FEATURES APPLICATIONS

Size: px
Start display at page:

Download "Si9986. Buffered H-Bridge. Vishay Siliconix. RoHS* COMPLIANT DESCRIPTION FEATURES APPLICATIONS"

Transcription

1 Si998 ishay Siliconix Buffered H-Bridge DESCRIPTION The Si998 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous. A at DD = (room temperature) at switching rates up to khz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on simultaneously. Unique input codes allow both outputs to be forced low (for braking) or forced to a high impedance level. The Si998 is available in both standard and lead (Pb)-free, 8-pin SOIC packages, specified to operate over a voltage range of.8 to., and the commercial temperature range of to 7 C (C suffix) and the industrial temperature range of - to 85 C (D suffix). FEATURES. A H-Bridge khz Switching Rate Shoot-Through Limited TTL Compatible Inputs.8 to. Operating Range Surface Mount Packaging APPLICATIONS CM Driver Brushed Motor Driver Stepper Motor Driver Power Converter Optical Disk Drives Power Supplies High Performance Servo Pb-free Available RoHS* COMPLIANT FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE SO-8 DD S A 8 OUT A () GND DD Si998 7 IN A IN B S B 5 OUT B (7) IN A Top iew TRUTH TABLE IN A IN B OUT A OUT B HiZ HiZ IN B GND () () Shoot-Through Protection Logic () (8) (5) () S A OUTPUT A B S B PIN DESCRIPTION Pin Number Name Function S A Source of the low-side MOSFET on bridge arm A GND Ground DD IC power supply S B Source of the low-side MOSFET on bridge arm B Center tap of bridge arm B. Connects to one end 5 OUT B of the load IN B Input signal to control bridge arm B 7 IN A Input signal to control bridge arm A Center tap of bridge arm A. Connects to the other 8 OUT A end of the load * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 77 S-7-Rev. F, -Oct-7 ORDERING INFORMATION Part Number Temperature Range Package Si998CY-T to 7 C Si998DY-T - to 85 C Tape and Reel Si998CY-T-E to 7 C Lead (Pb)-free Si998DY-T-E - to 85 C Tape and Reel Si998CY to 7 C Si998DY - to 85 C Bulk (tubes)

2 Si998 ishay Siliconix ABSOLUTE MAXIMUM RATINGS a Parameter Limit Unit oltage on any Pin with Respect to Ground -. to DD +. oltage on Pins 5, 8 with Respect to GND - to DD + oltage on Pins, -. to GND + Peak Output Current.5 A Storage Temperature - 5 to 5 Maximum Junction Temperature (T J ) 5 C Maximum DD 5 Power Dissipation b W Θ JA C/W Operating Temperature Range Si998CY to 7 Si998DY - 5 to 85 Notes: a. Device Mounted with all leads soldered or welded to PC board. b. Derate mw/ C above 5 C. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Limit Unit DD.8 to. Maximum Junction Temperature (T J ) 5 C SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified DD =.8 to. S A at GND, S B at GND Input Input oltage High INH Limits C Suffix, to 7 C D Suffix, - to 85 C Min a Typ b Max a Input oltage Low INL Input Current with Input oltage High I INH IN = Input Current with Input oltage Low I INL IN = - Output I Output oltage High OUT = - 5 ma DD = OUTH DD =.5.. I OUT = - ma, DD =.8..7 I Output oltage Low OUT = 5 ma DD =.8.. OUTL DD =.5.. I OUT = ma, DD =.8.. Output Leakage Current High I OLH IN A = IN B, OUT = DD =. - Output Leakage Current Low I OLL OUT =, DD =. Output Clamp High CLH I IN A = IN B OUT = ma DD +.7 Output Clamp Low CLL I OUT = - ma -.7 Supply IN = khz, DD Supply Current = 5 ma DD IN A = IN B =.5, DD = 5.5 µa Dynamic Propogation Delay Time T PLH DD = 5 T PHL ns Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. C Unit µa µa Document Number: 77 S-7-Rev. F, -Oct-7

3 Si998 ishay Siliconix TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 5 DD = () OUTH (m) OUTL DD = Output Current (A) Output High oltage vs. Output Current Output Current (A) Output Low oltage vs. Output Current 5 f = khz - Standby ( µ A) DD - Supply oltage () Supply Current vs. Supply oltage DD - Supply oltage () Supply Current vs. Supply oltage 8 8 DD =. f = khz DD =. - Standby ( µ A) Temperature ( C) Supply Current vs. Temperature Temperature ( C) Supply Current vs. Temperature Document Number: 77 S-7-Rev. F, -Oct-7

4 Si998 ishay Siliconix TYPICAL CHARACTERISTICS 5 C, unless otherwise noted DD =. Delay Time (ns) T PLH 5.5 T PHL f - Frequency (khz) Supply Current vs. Frequency 9 5 DD - Supply oltage () Propagation Time vs. Supply oltage ishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 77 S-7-Rev. F, -Oct-7

5 Notice Legal Disclaimer Notice ishay Specifications of the products displayed herein are subject to change without notice. ishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in ishay's terms and conditions of sale for such products, ishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of ishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify ishay for any damages resulting from such improper use or sale. Document Number: 9 Revision: 8-Apr-5

Adaptive Power MOSFET Driver 1

Adaptive Power MOSFET Driver 1 Adaptive Power MOSFET Driver 1 FEATURES dv/dt and di/dt Control Undervoltage Protection Short-Circuit Protection t rr Shoot-Through Current Limiting Low Quiescent Current CMOS Compatible Inputs Compatible

More information

5 V, 1 A H-Bridge Motor Driver

5 V, 1 A H-Bridge Motor Driver , A H-Bridge Motor Driver DESCRIPTION The SIP200 is an integrated, buffered H-bridge with TTL and CMOS compatible inputs with the capability of delivering up to A continuous current at DD supply. The SIP200

More information

Monolithic Dual SPST CMOS Analog Switch

Monolithic Dual SPST CMOS Analog Switch Monolithic Dual SPST CMOS Analog Switch DG00B DESCRIPTION The DG00B is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally

More information

CAN Bus Driver and Receiver

CAN Bus Driver and Receiver ishay Siliconix CAN Bus Driver and Receiver FEATURES Survives Ground Shorts and Transients on Multiplexed Bus in Automotive and Industrial Applications Single Power Supply Compatible with Intel 82526 CAN

More information

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion DESCRIPTION The SiP41104 is a high-speed half-bridge MOSFET driver for use in high frequency, high current, multiphase dc-to-dc synchronous rectifier

More information

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70 Low-oltage Single-Supply, SPDT Analog Switch in SC-7 DESCRIPTION The DG499 is a cost effective upgrade to other types of 499 low-voltage, single-pole/double-throw analog switches available in the industry

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch DG27B High-Speed Quad Monolithic SPST CMOS Analog Switch DESCRIPTION The DG27B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage

More information

Half-Bridge MOSFET Driver for Switching Power Supplies

Half-Bridge MOSFET Driver for Switching Power Supplies Si99 Half-Bridge MOSFET Driver for Switching Power Supplies FEATURES.- to.-v Operation Undervoltage Lockout -khz to -MHz Switching Frequency Synchronous Switch Enable One Input PWM Signal Generates Both

More information

Adaptive Power MOSFET Driver 1

Adaptive Power MOSFET Driver 1 End of Life. Last Available Purchase Date is 3-Dec-204 Si990 Adaptive Power MOSFET Driver FEATURES dv/dt and di/dt Control Undervoltage Protection Short-Circuit Protection t rr Shoot-Through Current Limiting

More information

Dual Output Power Switch

Dual Output Power Switch Dual Output Power Switch FEATURES Two Output Power Switches Total Output Drive 200 ma Continuous 9- to 35- Supply oltage Range Low Side or High Side Switch Configuration Pb-free Available Internal Output

More information

75 V/2 A Peak, Low Cost, High Frequency Half Bridge Driver

75 V/2 A Peak, Low Cost, High Frequency Half Bridge Driver ishay Siliconix 75 /2 A Peak, Low Cost, High Frequency Half Bridge Driver DESCRIPTION SiP4 is the MOSFET driver, which is designed to simplify the converter design for the topologies, which requires the

More information

Half-Bridge MOSFET Driver for Switching Power Supplies

Half-Bridge MOSFET Driver for Switching Power Supplies Product is End of Life / Si99 Half-Bridge MOSFET Driver for Switching Power Supplies DESCRIPTION The Si99 is a dual MOSFET high-speed driver with breakbefore-make. It is designed to operate in high frequency

More information

High-Speed Quad Monolithic SPST CMOS Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch High-Speed Quad Monolithic SPST CMOS Analog FEATURES BENEFITS APPLICATIONS Fast ing : 55 ns Low Charge Injection: 5 pc Low r DS(on) : 3 TTL/CMOS Compatible Low Leakage: pa Fast Settling Times Reduced ing

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,

More information

Series Linear Regulator Controller

Series Linear Regulator Controller Series Linear Regulator Controller DESCRIPTION SiP21301 is a single channel series regulator controller to drive N-Channel MOSFET. It is the perfect choice for the low voltage, high current application.

More information

Improved Quad CMOS Analog Switches

Improved Quad CMOS Analog Switches Improved Quad CMOS Analog Switches DESCRIPTION The analog switches are highly improved versions of the industry-standard DG2A, DG22. These devices are fabricated in proprietary silicon gate CMOS process,

More information

N-Channel 240 -V (D-S) MOSFET

N-Channel 240 -V (D-S) MOSFET N-Channel -V (D-S) MOSFET TNK/TNKL/BS7KL PRODUCT SUMMARY Part Number V DS Min (V) r DS(on) ( ) V GS(th) (V) I D (A) Q g (Typ) TNK TNKL/BS7KL @ V GS = V.8 to.. @ V GS = V.8 to.. 87.87 FEATURES BENEFITS

More information

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers 8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers ESCRIPTION The G48 is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a

More information

Low-Voltage Single SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch Low-Voltage Single SPDT Analog Switch DG9411 DESCRIPTION The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low

More information

Half-Bridge N-Channel MOSFET Driver With Break-Before-Make

Half-Bridge N-Channel MOSFET Driver With Break-Before-Make Half-Bridge N-Channel MOSFET Driver With Break-Before-Make DESCRIPTION The SiP411 is a high speed half-bridge driver, with make-before-break, for use in high frequency, high current multiphase dc-to-dc

More information

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion

Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion DESCRIPTION The SiP41109 and SiP41110 are high-speed half-bridge MOSFET drivers for use in high frequency, high current, multiphase dc-to-dc synchronous

More information

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer) DG2307 DESCRIPTION The DG2307 is a single-pole-double-throw switch/2:1 mux designed for 2 to 5.5 V applications. Using proprietary sub-micro CMOS

More information

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer/Demultiplexer Bus Switch) DG3157 DESCRIPTION The DG3157 is a high-speed single-pole double-throw, low power, TTL-Compatible bus switch. Using sub-micro

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available

More information

Precision Quad SPDT Analog Switch

Precision Quad SPDT Analog Switch Precision Quad SPDT Analog Switch DESCRIPTION The consist of four independently controlled single-pole double-throw analog switches. These monolithic switch is designed to control analog signals with a

More information

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix. 1.5 On Resistance, ± 15 / +12 / ± 5, Quad SPST Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix

More information

N- and P-Channel 2.5-V (G-S) MOSFET

N- and P-Channel 2.5-V (G-S) MOSFET N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available

More information

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS DG275, DG276 Low-Voltage, 0.4 R ON, Single SPST Analog Switch DESCRIPTION The DG275, DG276 are low voltage, single supply, dual SPST analog switches. Designed for high performance switching of analog signals,

More information

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS 0.35-Ω Low-Voltage Dual SPDT Analog Switch DG2535/DG2536 DESCRIPTION The DG2535/DG2536 is a sub Ω (0.35 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG2535/DG2536 has

More information

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Isolation,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay

Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay New Product Half-Bridge N-Channel Programmable 1-A MOSFET Driver for DC/DC Conversion with Adjustable High Side Propagation Delay FEATURES 8-V or 12-V Low-Side Gate Drive Undervoltage Lockout Internal

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET SiEDL N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 6 SOT- SC-7 (-LEADS). at V GS = V. at V GS =. V. 8 at V GS = V. FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

Synchronous Buck Converter Controller

Synchronous Buck Converter Controller Product is End of Life 3/204 Synchronous Buck Converter Controller Si950 DESCRIPTION The Si950 synchronous buck regulator controller is ideally suited for high-efficiency step down converters in battery-powered

More information

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature

More information

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability DG6, DG63 DESCRIPTION The DG6, DG63 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative

More information

CAN Bus Driver and Receiver

CAN Bus Driver and Receiver Product is End of Life 12/2014 CAN Bus Driver and Receiver Si9200 DESCRIPTION The Si9200EY is designed to interface between the Intel 82526 CAN controller and the physical bus to provide drive capability

More information

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer) Power-off Protection,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

Precision Monolithic Quad SPST CMOS Analog Switches

Precision Monolithic Quad SPST CMOS Analog Switches Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET Si33BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -.9 at V GS = -.7 V - 3.8. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition

More information

P-Channel 30-V (D-S), MOSFET

P-Channel 30-V (D-S), MOSFET SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to

More information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 40-V (D-S), 175 C MOSFET N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage

More information

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

N-Channel Power MOSFET 40V, 3.9A, 45mΩ N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC

More information

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET Dual P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition Compliant to RoHS Directive

More information

P-Channel 40 V (D-S), 175 C MOSFET

P-Channel 40 V (D-S), 175 C MOSFET P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant

More information

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5

More information

FEATURES APPLICATIONS

FEATURES APPLICATIONS .7, Low On Resistance, + V, +5 V, +3 V, ± 5 V, SPST Switches DESCRIPTION The DG9E and DG9E are monolithic single-pole-single-throw (SPST) analog switches. The DG9E has a normally closed function. The DG9E

More information

Single-Ended Bus Transceiver

Single-Ended Bus Transceiver Single-Ended Bus Transceiver FEATURES Operating Power Supply Range 6 36 Reverse Battery Protection Down to 24 Standby Mode With ery Low Current Consumption I BAT(SB) = 1 A @ = 0.5 Low Quiescent Current

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

N-Channel 200-V (D-S) 175 C MOSFET

N-Channel 200-V (D-S) 175 C MOSFET New Product SUM33N26P ishay Siliconix NChannel 2 (DS) 75 C MOSFET PRODUCT SUMMARY (BR)DSS () r DS(on) (Ω) I D (A) Q g (Typ) 2 TO263.59 at GS = 5 33.6 at GS = 33 53 FEATURES TrenchFET Power MOSFETS 5 C

More information

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers DG148E, DG149E 3.9, 8-Channel / Dual 4-Channel, ± 15, +12, ± 5 Precision Multiplexers DESCRIPTION The DG148E is a precision analog multiplexer comprising eight single-ended channels. The DG149E is a dual

More information

Bi-Directional P-Channel MOSFET/Power Switch

Bi-Directional P-Channel MOSFET/Power Switch Bi-Directional P-Channel MOSFET/Power Switch PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) ± 7 DESCRIPTION.7 at V GS = -.5 V ±.. at V GS = -.5 V ±. The is a low on-resistance p-channel power MOSFET providing

More information

N-Channel Synchronous MOSFETs With Break-Before-Make

N-Channel Synchronous MOSFETs With Break-Before-Make New Product Si4738CY N-Channel Synchronous MOSFETs With Break-Before-Make FEATURES 0- to 20-V Operation Under-Voltage Lockout Shoot Through Resistant Fast Switching Times SO-16 Package Driver Impedance

More information

Low Voltage, Dual SPDT Analog Switch with Charge Pump

Low Voltage, Dual SPDT Analog Switch with Charge Pump Low Voltage, Dual SPDT Analog Switch with Charge Pump DG, DG, DG DESCRIPTION The DG, DG, DG are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining

More information

PSM Buck Converter with Dynamic Adjustable Output and Bypass Capability

PSM Buck Converter with Dynamic Adjustable Output and Bypass Capability New Product Si9172 PSM Buck Converter with Dynamic Adjustable Output and Bypass Capability 2.7- to 6- Input oltage Range Dynamic Adjustable 1.5- to 3.6- Output. Power Conversion Efficiency of 95% at 170-mA

More information

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch .39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch DESCRIPTION The is a compact, low resistance, ultra-low distortion double pole double throw (DPST) analog switch. The features a flat.39

More information

Ultrafast Rectifier, 30 A FRED Pt TM

Ultrafast Rectifier, 30 A FRED Pt TM Base common cathode 2 FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 75 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial

More information

Load Switch with Level-Shift

Load Switch with Level-Shift Si38BDV Load Switch with Level-Shift PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).8 to 8 DESCRIPTION. at V IN =. V.9. at V IN =. V..7 at V IN =.8 V.7 The Si38BDV includes a p- and n-channel MOSFET in

More information

N- and P-Channel 20-V (D-S) MOSFET

N- and P-Channel 20-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET SiCDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) e Q g (Typ.).8 at V GS = 4. V 6 a.6 at V GS =. V 6 a 8.8 nc.44 at V GS =.8 V.6 FEATURES Halogen-free According to IEC 649--

More information

N-Channel Power MOSFET 100V, 160A, 5.5mΩ

N-Channel Power MOSFET 100V, 160A, 5.5mΩ N-Channel Power MOSFET 100V, 160A, 5.5mΩ FEATURES Advanced Trench Technology Low R DS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) KEY PERFORMANCE PARAMETERS

More information

P-Channel 100 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

High-Voltage, Non-Isolated Buck-Boost Converter for ISDN Digital Phones

High-Voltage, Non-Isolated Buck-Boost Converter for ISDN Digital Phones End of Life. Last Available Purchase Date is -Dec-20 Si92 High-Voltage, Non-Isolated Buck-Boost Converter for ISDN Digital Phones FEATURES Fixed -V or.-v Output Integrated Floating Feedback Amplifier On-Chip

More information

N-Channel 30-V (D-S) MOSFET with Sense Terminal

N-Channel 30-V (D-S) MOSFET with Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET with Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) (Ω) (A).3 at V GS = V 5 a 3.7 at V GS =.5 V 8 a D PAK-5 FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode

More information

Complementary 20 V (D-S) MOSFET

Complementary 20 V (D-S) MOSFET SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V

More information

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection

N-Channel 2.5-V (G-S) Battery Switch, ESD Protection N-Channel.-V (G-S) Battery Switch, ESD Protection Si694AEDQ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).33 at V GS = 4. V 4.6 8.38 at V GS = 3. V 4.3.4 at V GS =. V 4. FEATURES Halogen-free Low R DS(on)

More information

N- and P-Channel 30-V (D-S) MOSFET

N- and P-Channel 30-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free

More information

Complementary N- and P-Channel 20 V (D-S) MOSFET

Complementary N- and P-Channel 20 V (D-S) MOSFET Complementary N- and P-Channel V (D-S) MOSFET Si6X PRODUCT SUMMARY V DS (V) ( ) I D (ma).7 at V GS =. V 6 N-Channel.8 at V GS =. V. at V GS =.8 V. at V GS = -. V - P-Channel -.6 at V GS = -. V -.7 at V

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number Dual SPST Switches DG, DG8, DG9 DESCRIPTION The DG, DG8, and DG9 are low voltage, precision dual SPST switches that can be operated in a single supply or in a dual supply configuration power supply with

More information

P-Channel 1.8 V (G-S) MOSFET

P-Channel 1.8 V (G-S) MOSFET Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET

More information

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch

0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch .4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The DG2523 and DG2524 are four-channel single-pole double-throw (SPDT) analog switches. The DG2523 has two control inputs

More information

N-Channel Power MOSFET 600V, 11A, 0.38Ω

N-Channel Power MOSFET 600V, 11A, 0.38Ω N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant

More information

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection New Product DG/DG1 Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection DESCRIPTION The DG/DG1 are low-voltage single single-pole/ double-throw monolithic CMOS analog switches. Designed

More information

Switching Diode SYMBOL. Peak reverse voltage 100 DC blocking voltage Non-repettive peak forward current 300 I FSM. A Power dissipation P D 200

Switching Diode SYMBOL. Peak reverse voltage 100 DC blocking voltage Non-repettive peak forward current 300 I FSM. A Power dissipation P D 200 Switching Diode FEATURES - Surface Mounted Device - Fast Switching Speed - Moisture sensitivity level (MSL): - Pb free and RoHS compliant MECHANICAL DATA - Case: Bend lead package - High temperature soldering

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET N7K N-Channel 6-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 6 at V GS = V G S T O-6 SOT - Top View N7K (7K)* * Marking Code Ordering Information: N7K-T N7K-T-E (Lead (Pb)-free) N7K-T-GE

More information

Dual P-Channel MOSFET -60V, -12A, 68mΩ

Dual P-Channel MOSFET -60V, -12A, 68mΩ Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER

More information

Power MOSFET FEATURES. Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION. IRFD113PbF SiHFD113-E3

Power MOSFET FEATURES. Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION. IRFD113PbF SiHFD113-E3 Power MOSFET PRODUCT SUMMARY V DS (V) 60 R DS(on) (Ω) V GS = 10 V 0.8 Q g (Max.) (nc) 7 Q gs (nc) 2 Q gd (nc) 7 Configuration Single D HVMDIP FEATURES For Automatic Insertion Compact Plastic Package End

More information

P-Channel 20-V (D-S) MOSFET with Schottky Diode

P-Channel 20-V (D-S) MOSFET with Schottky Diode P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE

More information

Dual SPDT Analog Switch

Dual SPDT Analog Switch Dual SPDT Analog Switch DESCRIPTION The DG9236 is a CMOS, dual SPDT analog switch designed to operate from = 2.7 V to = 6 V max. operating, single supply. All control logic inputs have a guaranteed.8 V

More information

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L

More information

N-Channel Power MOSFET 100V, 81A, 10mΩ

N-Channel Power MOSFET 100V, 81A, 10mΩ N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power

More information

Dual P-Channel 30-V (D-S) MOSFET

Dual P-Channel 30-V (D-S) MOSFET Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power

More information

Protected 1-A High-Side Load Switch

Protected 1-A High-Side Load Switch Product is End of Life 2/24 Protected -A High-Side Load Switch SiP463A, SiP463B DESCRIPTION SiP463A, SiP463B is a protected highside power switch. It is designed to operate from voltages ranging from 2.4

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

P-Channel 20 V (D-S) MOSFET with Schottky Diode

P-Channel 20 V (D-S) MOSFET with Schottky Diode P-Channel 20 V (D-S) MOSFET with Schottky Diode Si4823DY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 20 0.08 at V GS = - 4.5 V - 4. 0.75 at V GS = - 2.5 V - 3.3 SCHOTTKY PRODUCT SUMMARY

More information

Complementary N- and P-Channel 40-V (D-S) MOSFET

Complementary N- and P-Channel 40-V (D-S) MOSFET Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -

More information

N- and P-Channel 1.8 V (G-S) MOSFET

N- and P-Channel 1.8 V (G-S) MOSFET Si7DH N- and P-Channel.8 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A). at V GS =. V. N-Channel.8 at V GS =. V.. at V GS =.8 V.. at V GS = -. V -.86 P-Channel -.88 at V GS = -. V -.67.6 at V

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET New Product SiL P-Channel.-V (G-S) MOSFET PROUCT SUMMARY V S (V) r S(on) (Ω) I 8 at V GS = -. V ±. -. at V GS = -.6 V ±..6 at V GS = -. V ±. FEATURES TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT

More information

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si483CDY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) Channel- 3 Channel-2 3.2 at V GS = V 8..25 at V GS = 4.5 V 8..2 at V GS = V 8..25

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition

More information

Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition

More information

Power MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024

Power MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024 Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single D HVMDIP G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead

More information