MB3761 ASSP VOLTAGE DETECTOR DS E VOLTAGE DETECTOR FUJITSU SEMICONDUCTOR DATA SHEET

Transcription

1 FUJITSU SEMICONDUCTOR DATA SHEET DS4--E ASSP VOLTAGE DETECTOR VOLTAGE DETECTOR Designed for voltage detector applications, the Fujitsu is a dual comparator with a built-in high precision reference voltage generator. Outputs are open-collector outputs and enable use of the OR-connection between both channels. Both channels have hysteresis control outputs. Because of a wide power supply voltage range and a low power supply current, the is suitable for power supply monitors and battery backup systems. PLASTIC PACKAGE SIP-P-M PLASTIC PACKAGE DIP-P-M Wide power supply voltage range:.5 V to 4 V Low power and small voltage dependency supply current: 5 µa typical. Built-in stable low voltage generator:. V typical. Easy-to-add hysteresis characteristics. Package: -pin Plastic SIP Package (Suffix: -PS) -pin Plastic DIP Package (Suffix: -P) -pin Plastic FPT Package (Suffix: -PF) PLASTIC PACKAGE FPT-P-M PIN ASSIGNMENT (FRONT VIEW) B (+) + HYS-B ABSOLUTE MAXIMUM RATINGS (See NOTE) Rating Symbol Value Unit Power Supply Voltage 4 V Output Voltage VO 4 V Output Current IO 5 ma ( ) A + ( ) (+) 5 4 OUT-B OUT-A IN-A HYS-A IN-B Input Voltage VIN -. to +.5 V (TOP VIEW) Power Dissipation PD 5 (TA C) mw IN-B + B (+) ( ) Storage Temperature TSTG -55 to 5 C HYS-A (+) HYS-B NOTE: Permanent device damage may occur if ABSOLUTE MAXI- MUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. IN-A OUT-A 4 + A ( ) 5 OUT-B This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.

2 Figure. Equivalent Circuit V CC HYS-A 4 OUT-A V REF.V HYS-B 5 IN-A IN-B OUT-B RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Unit Power Supply Voltage.5 to 4 V Operating Temperature TA - to 5 C Output Current at pin 4 IO4 4.5 ma Output Current at pin IO. ma

3 ELECTRICAL CHARACTERISTICS Parameter Designator Conditions Power Supply Voltage Values Min Typ Max TA=5 C, =5V ICCL =4 V, VIL=. V µa ICCH =4 V, VIH=.5 V - 4 µa Threshold Voltage VTH IO = ma, VO= V.5..5 V Deviation of Threshold Voltage Offset Voltage between Outputs Temperature Coefficient of Threshold Voltage Difference Voltage on Threshold Voltage between Channel Unit VTH.5 V 5.5 V - mv VTH 4.5 V 4 V - 4 mv VOOSA VOSSB IOA= 4.5 ma, VOA= V IHA= ma, VHA= V IOB= ma, VOB= V IHB= ma, VHB= V -. - mv -. - mv α - C TA C - ±.5 - mv/ C VTHAB mv IIL VIL=. V - 5 na Input Current IIH VIH=.5 V - 5 na Output Leakage Current IOH VO=4 V, VIL=. V - - µa Hysteresis Output Leakage Current Output Sink Current Hysteresis Current Output Saturation Voltage Hysteresis Saturation Output Delay Time IHLA =4 V, VHA= V, VIL=. V - -. µa IHHB VHB=4 V, VIH=.5 V - - µa IOLA VO=. V, VIH=.5 V - ma IOLB VO=. V, VIH=.5 V 4 - ma IHHA VH= V, VIH=.5 V 4 - µa IHLB VH=. V,VIL =. V 4 - ma VOLA IO= 4.5 ma, VIH=.5 V - 4 mv VOLB IO=. ma, VIH=.5 V - 4 mv VHHA IH= µa, VIH=.5 V - 5 mv VHLB IH=. ma, VIL=. V - 4 mv tphl RL=5 KΩ - - µs tplh RL=5 KΩ - - µs

4 Figure. Operational Definitions V OA V IN V CC R 4 R R R L R L R R 5 V HB HYS-B V HB V ILA V IHA V IN V OB OUT-B VOB V IN R V OA OUT-A V IN V ILB V IHB V IHA =(+ R R )V R V IHB =(+ R5 R 4 )V R // R NOTE) V R V TH (.V) R V ILA =(+ R )V R // R R - R V CC V ILB =(+ R 4 )V R5 R R R // R = R R + R R 5 // R = R 5 R R5 + R 4

5 TYPICAL PERFORMANCE CHARACTERISTICS Power Supply Current ICC (µa) 5 4 Fig. - Power Supply Current vs Power Supply Voltage VIH =.5V C 5 C - C C Hysteresis (A) Current IHHA ( µa) 5 9 Fig. 4 - Hysteresis (A) Current vs Power Supply Voltage C 5 C - C 5 C VIH=.5V VIL=.V - C Output (A) Voltage VOLA (V)... 4 Power Supply Voltage =5V VIH=.5V - C (V) Fig. 5 - Output (A) Voltage vs. Output (A) Current Power Supply Voltage 5 C Output. (B) Voltage - C VOLB (V). 5 C C =5V C VIH=.5V. Fig. - 4 (V) Output (B) Voltage vs. Output (B) Current Output (A) Current IOLA (ma) Output (B) Current IOLB (ma) Threshold Voltage VTH (V).. Fig. - Threshold Voltage vs. Power Supply Voltage Threshold Voltage VTH (V).. Fig. - Threshold Voltage vs. Temperature.. TA=5 C.9.9 =5V... 4 Power Supply Voltage (V). - 4 Temperature TA ( C) 5

6 APPLICATION EXAMPLES Figure 9. Addition of Hysteresis (VIN) VOA R R L VOA VILA VIHA VIH () VIHA =(+ + R )V R VILA =(+ )VR IN R L VHB R VHB C VOB VOB VIH VIH VILB VIHB Note: All calculations occur with the output voltage at. The hysteresis values are adjusted for load condition and saturation voltage. VIHB = ( + R )V R V ILB =(+ R + )VR

7 APPLICATION EXAMPLES (Continued) Figure. Voltage Detection for Alarm VO RL VO R R4 L H H = (+ )VR R L = (+ R4 )VR L.5 V For hysteresis, a positive feedback from pin or is required. Figure. Voltage Detection for Alarm VO R4 RL VO R L H H = ( + )VR R4 L= ( + R )VR L.5 V

8 APPLICATION EXAMPLES (Continued) Figure. Programmable Zener R VZ (+ )VR VZ R VZ R + - VZ ma + - Channel B can be used independently. Figure. Recovery Reset Circuit 5 KΩ = 5 V R KΩ. KΩ R4 OUT. KΩ.µF R5. KΩ C OUT

9 TYPICAL CHARACTERISTICS Figure 4. DC Characteristics Figure 5. Response Characteristics VO (V) 4 (V) 5 L H VO (V) 4.4 VO (V) trst ms Voltage Threshold Levels (L and H) and Hysteresis Width can be changed by the resistors ( through R4). + R + L = VTH (R + H = L + R4 Power-On Reset Time is provided by the following approximate equation: The recommended value of hfe of the external transistor is from 5 to. In the case of an instant power fail, the remaining charge in C effects trst. ) VTH trst = -C R4 In { ( + )} - VTH If necessary, the reversed output is provided on HYS terminal R + 9

10 PACKAGE DIMENSIONS (Continued) pin, Plastic SIP (SIP-P-M) ±.5 (.±.) INDEX- INDEX-.±.5 (.44±.).±. (.±.) ±. (.5±.).54(.) TYP ±. (.±.).5±.5 (.±.) C 994 FUJITSU LIMITED SS-C- Dimensions in mm (inches).

11 PACKAGE DIMENSIONS (Continued) pin, Plastic DIP (DIP-P-M) PIN INDEX.±.5 (.44±.) 4.(.)MAX.(.)MIN.5(.)MIN.4±. (.±.).5±.5 (.±.) (.) +.4. TYP (.) TYP 5 MAX C 994 FUJITSU LIMITED DS-C- Dimensions in mm (inches).

12 PACKAGE DIMENSIONS (Continued) pin, Plastic SOP (FPT-P-M) (.9)MAX.5(.)MIN (STAND OFF) INDEX 5.±..±.4 (.9±.) (.±.) (.5) TYP.(.5)REF.45±. (.±.4) Ø.(.5) M Details of "A" part.5±. (.±.).(.) "A".(.4).(.)MAX.(.)MAX.5(.) C 994 FUJITSU LIMITED FS-4C-4 Dimensions in mm(inches).

13 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4--, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa -, Japan Tel: (44) 54- Fax: (44) 54-9 North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 545 North First Street San Jose, CA 954-4, U.S.A. Tel: (4) 9-9 Fax: (4) 4-944/945 Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein - Dreieich-Buchschlag Germany Tel: () 9- Fax: () 9- Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LIMITED #5-, 5 Lorong Chuan New Tech Park Singapore 554 Tel: (5) - Fax: (5) - All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan. F9 FUJITSU LIMITED Printed in Japan 4