MB3759. ASSP Pulse-Width-Modulation Control Circuit DS E PULSE-WIDTH-MODULATION CONTROL CIRCUIT PUSH-PULL/SINGLE-ENDED OUTPUT MODE

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1 FUJITSU SEMICONDUCTOR DATA SHEET DS4-272-E ASSP Pulse-Width-Modulation Control Circuit MB379 PULSE-WIDTH-MODULATION CONTROL CIRCUIT PUSH-PULL/SINGLE-ENDED OUTPUT MODE The Fujitsu MB379 is complete pulse-width modulation control system on a single monolithic chip. The MB379 consists of an internal.v reference, two or-connected amplifiers, externally timed (or synchronized) oscillator and control ramp generator. The MB379 provides for either push-pull or single-ended mode of operation with external control of dead-band. The two NPN output transistors have uncommitted emitters and collectors that can be used to either sink or source up to 2mA each. Complete pulse-width-modulation system with power control circui Either push-pull or single-ended mode of operation Internal circuitry prohibits double pulse at either output On-chip voltage reference (V) Uncommitted output drivers Master or slave oscillator control Dual error amplifiers Under voltage lockout function Dead time adjustable Package: 16-pin Plastic DIP Package (Suffix -P) 16-pin Ceramic DIP Package (Suffix -Z) 16-pin Plastic FPT Package (Suffix -PF) ABSOLUTE MAXIMUM RATINGS (see NOTE) Parameter Symbol Rating Unit Power Supply Voltage VCC 41 V Collector Output Voltage VCE 41 V Collector Output Current ICE 2 ma Amplifier Input Voltage VIN VCC.3 V Power Dissipation Operating Temperature Plastic DIP Ceramic DIP Plastic FPT PD 1 (TA 2 C) 8 (TA 6 C) 62 (TA 2 C)* DIP -2 to 8 TA FPT -2 to 7 Storage Temperature TSTG - to 12 C * PFT package is mountedon the epoxy board. (4cm x 4cm x.1cm) NOTE: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. mw C IN1 -IN1 F.B. D.T CT RT GND C PLASTIC PACKAGE DIP-16P-M4 CERAMIC PACKAGE DIP-16C-C1 PLASTIC PACKAGE FPT-16P-M6 PIN ASSIGNMENT TOP VIEW A1 - OSC TR1 A2 - TR IN2 -IN2 VR O.C VCC C2 E2 E1 This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit. 1

2 Fig. 1 - MB379 BLOCK DIAGRAM OUTPUT CONTROL 13 RT CT DEAD TIME CONTROL 6 4.2V OSC Q T Q PULSE STEERING F/F C1 E1 C2 E2 IN -IN 1 2 ERROR AMP1 - A1 PWM COMPARATOR REFERENCE REGULATOR VCC VREF IN -IN A2 7 GND FEED BACK 3 ERROR AMP2 2

3 RECOMMENDED OPERATING CONDITIONS Parameter Symbol DIP-package FPT-package Min Typ Max Min Typ Max Power Supply Voltage VCC V Collector Output Voltage VCE V Collector Output Current ICE ma Amplifier Input Voltage VIN -.3 to VREF VCC to VREF VCC -2 FB Sink Current ISINK ma FB Source Current ISOURCE ma Reference Section Output Current IREF ma Timing Resistor RT kω Timing Capacitor CT pf Oscillator Frequency fosc khz Operating Temperature TA C Note: These recommended operating conditions are based on the standard condition. When used at higher supply voltage, careful consideration for the ambient temperature, power consumption and so on is necessary. Unit V ELECTRICAL CHARACTERISTICS Parameter Symbol Condition (TA=2 C, VCC=1V) Value Unit Min Typ Max Reference Section Output Voltage VREF IO=1mA V Input Regulation VRIN 7V VCC 4V, TA=2 C mv Load Regulation VRLD 1mA IO 1mA, TA=2 C mv Temperature Stability VR/ T -2 C TA 8 C - ±2 ±7 µv/ C Short Circuit Output Current ISC ma Reference Lockout Voltage V Reference Hysteresis Voltage V 3

4 ELECTRICAL CHARACTERISTICS (continued) Parameter Symbol Condition Value Min Typ Max Unit Oscillator Section Oscillator Frequency fosc RT=3kΩ, CT=1pF khz Standard Deviation of Frequency RT=3kΩ, CT=1pF - ±3 - % Frequency Change with Voltage 7V VCC 4V, TA=2 C - ±.1 - % Frequency Change with Temperature fosc/ T -2 C TA 8 C - ±.1 ±.3 %/ C Dead-Time Control Section Input Bias Current ID VI.2V µa Maximum Duty Cycle (Each Output) Input Threshold Voltage VI= % % Duty Cycle VDO V Max. Duty Cycle VDM - - V Error Amplifier Section Input Offset Voltage VIO VO (pin3) = 2.V - ±2 ±1 mv Input Offset Current IIO VO (pin3) = 2.V - ±2 ±2 na Input Bias Current II VO (pin3) = 2.V µa Common-Mode Input Voltage VCM 7V VCC 4V VCC -2 V Open-Loop Voltage Amplification AV. VO 3.V db Unity-Gain Bandwidth BW AV = khz Common-Mode Rejection Ratio CMR VCC = 4V db Output Sink Current (3pin) ISINK -V VID -1mV, VO=.7V ma Output Source Current (3pin) ISOURCE 1mV VID V, VO=3.V ma 4

5 ELECTRICAL CHARACTERISTICS (continued) Parameter Symbol Condition Value Min Typ Max Unit Output Section Collector Leakage Current ICO VCE=4V, VCC=4V µa Emitter Leakage Current IEO VCC=VC=4V, VE=V µa Collector Emitter Saturation Voltage Emitter Grounded Emitter Follower VSATC VE=, IC=2mA V VSATE VC=1V, IE=-2mA V Output Control Input Current IOPC VI=VREF ma PWM Comparator Section Input Threshold Voltage VTH % Duty V Input Sink Current (3pin) ISINK VO(pin3)=.7V ma Total Device Power Supply Current ICC V4=2V, See Fig ma Stand-by Current ICCQ V(pin6)=VREF, I/O open ma Switching Characteristics Rise Time Emitter tr RL=68Ω ns Fall Time Grounded tf RL=68Ω na Rise Time Emitter tr RL=68Ω ns Fall Time Follower tf RL=68Ω ns

6 Fig. 2 - TEST CIRCUIT VCC=1V 1Ω/2W TEST INPUT VD VC D.T. COMP VCC C1 E1 1Ω/2W OUTPUT1 1pF 3kΩ RT C2 CT E2 - A - A REF O.C. GND OUTPUT2 k Fig. 3 - OPERATING TIMING 3.V VC Voltage at CT VD V OUTPUT1 ON ON ON ON OUTPUT2 ON ON ON OSCILLATION FREQUENCY. fosc =. 1.2 / (RT CT) RT : kω CT : µf fosc : khz FUNCTION TABLE Input (Output Control) GND VREF Output State Single-ended or parallel output Push-pull 6

7 TYPICAL ELECTRICAL CURVES REFERENCE VOLTAGE V REF (V) OSCILLATOR FREQUENCYf OSC (HZ) OPEN LOOP VOLTAGE AMPLIFACTION AV (db) M k 2k 1k k Fig. 4 - REFERENCE VOLTAGE vs. POWER SUPPLY VOLTAGE POWER SUPPLY VOLTAGE VCC (V) Fig. 6 - OSCILLATOR FREQUENCY vs. RT, CT 2k 1k k 2k 1k 2k k 1k 2k 1k2kk TIMING RESISTANCE RT (Ω) Fig. 8 - OPEN LOOP VOLTAGE AMPLIFICATION vs. FREQUENCY VREF VREF.1µF.1µF VCC=1V VO=3V IO=1mA VCC=1V CT=47pF 1pF k 1k 1k 1M FREQUENCY f (Hz) - REFERENCE VOLTAGE CHANGE VREF (mv) REFERENCE VOLTAGE CHANGE VREF (mv) DUTY RADIO TON /T (%) LOW-LEVEL OUTPUT VOLTAGE V OL (V) Fig. - REFERENCE VOLTAGE vs. TEMPERATURE TEMPERATURE TA ( C) VCC=1V IO=1mA Fig. 7 - DUTY RATIO vs. DEAD TIME CONTROL VOLTAGE VCC=1V CT=1pF RT=3kΩ 2 C Ta= C 7 C DEAD TIME CONTROL VOLTAGE VD (V) Fig. 9 - OUTPUT VOLTAGE vs. OUTPUT CURRENT (FEED BACK TERMINAL).8 C 2 C 7 C.6 4 VOH 7 C.4 3 C VOL 2 C.2 2 IOL VCC=1V IOH OUTPUT CURRENT IOL, IOH (ma) HIGH-LEVEL OUTPUT VOLTAGE VOH (V) 7

8 TYPICAL ELECTRICAL CURVES (Continued) Fig. 1 - COLLECTOR SATURATION VOLTAGE vs. COLLECTOR OUTPUT CURRENT COLLECTOR SATURATIONVOLTAGE VSATC (V) OUTPUT VOLTAGE V OUT (V) POWER DISSIPATION PD (mw) COLLECTOR OUTPUT CURRENT IC (ma) Fig OUTPUT VOLTAGE vs. REFERENCE VOLTAGE VCC=1V 8 TA= C 2 C V 4Ω VOUT 7 C REFERENCE VOLTAGE VREF (V) Fig POWER DISSIPATION vs. POWER SUPPLY VOLTAGE 1 (IO, IR) TA=2 C (2.1) (ma) 8 (1.1) (2.) (1.) 6 (1.) (.) POWER SUPPLY VOLTAGE VCC (V) Note: IO is collector output current at emitter grounded mode. Fig EMITTER SATURATION VOLTAGE vs. EMITTER OUTPUT CURRENT EMITTER SATURATION VOLTAGE VSATE (V) POWER SUPPLY CURRENT ICC,ICCQ (ma) POWER DISSIPATION PD (mw) EMITTER OUTPUT CURRENT IE (ma) Fig POWER SUPPLY CURRENT vs. POWER SUPPLY VOLTAGE Fig. 1 - AVAILABLE POWER DISSIPATION vs. TEMPERATURE VCC=1V TA= C 2 C 7 C ICCQ POWER SUPPLY VOLTAGE VCC (V) PF P ICC TEMPERATURE TA ( C) Note: C (Ceramic DIP) P (Plastic DIP) PF (Plastic FPT) C 8

9 TYPICAL APPLICATION 1Ω Fig Chopper AC 1V 1V Ω 1mH 24V 2.A 1kΩ 2kΩ 16kΩ.1kΩ.22µF 1µF.1kΩ 1kΩ 1kΩ 2.2kΩ 47kΩ kω.6kω 3Ω pF 2kΩ 22µF.1Ω 9

10 TYPICAL APPLICATION (continued) Fig Inverter AC 1V 1V A 33Ω 33Ω 1Ω 1Ω 2SC2427.1Ω 24V 2.A 22µF A 2SC2427 B 1kΩ 16kΩ.1kΩ 1kΩ 1kΩ.22µF 2.2kΩ 1µF.6kΩ 47kΩ.1kΩ kω 3Ω F.B - REF - D.T VCC E1 C2 A C2 E2 RT A CT O.C GND REF 2kΩ 22pF B 1

11 PACKAGE DIMENSIONS 16 pin, Plastic DIP (DIP-16P-M4) INDEX-1 INDEX-2 6.2±.2 (.244±.1) 4.36(.172)MAX.1(.2)MIN 3.(.118)MIN.46±.8 (.18±.3).2±. (.1±.2) 1.27(.) MAX (.1) TYP 7.62(.3) TYP 1 MAX C 1994 FUJITSU LIMITED D1633S-2C-3 Dimensions in mm(inches). 11

12 PACKAGE DIMENSIONS (continued) 16 pin, Plastic SOP (FPT-16P-M6) 2.2(.89)MAX (.2)MIN (STAND OFF) INDEX.3±.3 7.8± (.29±.12) (.37±.16) "B" 1.27(.) TYP.4±.1 (.18±.4) Ø.13(.) M ±.2 (.2±.8) Details of "A" part.4(.16) Details of "B" part.1(.6) "A".1(.4) 8.89(.3)REF.2(.8).18(.7)MAX.68(.27)MAX.2(.8).18(.7)MAX.68(.27)MAX C 1994 FUJITSU LIMITED F161S-2C-4 Dimensions in mm(inches). 12

13 PACKAGE DIMENSIONS (continued) 16 pin, Ceramic DIP (DIP-16C-C1) R.64(.2) REF (.2)MAX 3.4±.36 (.134±.14).81±.3 (.32±.12) (.) MAX ±.2 (.1±.1) 17.78(.7)REF.81(.32) TYP (.3) TYP 1 C 1994 FUJITSU LIMITED D1611SC-2-3 Dimensions in mm(inches). 13

14 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa , Japan Tel: (44) Fax: (44) North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 34 North First Street San Jose, CA , U.S.A. Tel: (48) Fax: (48) /94 Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein Dreieich-Buchschlag Germany Tel: (613) 69- Fax: (613) Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LIMITED #-8, 11 Lorong Chuan New Tech Park Singapore 6741 Tel: (6) Fax: (6) All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan. F973 FUJITSU LIMITED Printed in Japan 24