Pulse-Width-Modulation Control Circuits

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1 Pulse-Width-Modulation Control Circuits Product Description The series incorporate on single monolithic chip all the functions required in the construction of a pulse-width-modulation control circuit. Designed primarily for power supply control, this device offers the systems engineer the flexibility to tailor the power supply control circuitry to a specific application. The series contain two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, a 5-V, 1%-precision regulator, and output-control circuits. Features Complete PWM Power Control Circuitry Uncommitted Outputs for 200-mA sink or Source Current Output Control Selects Single-Ended or Push-Pull Operation Internal Circuitry Prohibits Double Pulse at Either Output Variable Dead Time Provides Control Over Total Range Internal Regulator Provides a Stable 5-V Reference Supply With 1% Tolerance Circuit Architecture Allows Easy Synchronization The error amplifiers exhibit a common-mode voltage range from -0.3V to V CC -2V. The dead-time control comparator has a fixed offset that provides approximately 5% dead time. The on-chip oscillator may be by passed by terminating RT to the reference output and providing a saw tooth input to CT, or it may drive the common circuits in synchronous multiple-rail power supplies. The uncommitted output transistors provide either common-emitter or emitter-follower output capability. The series provide for push-pull or single-ended output operation, which may be selected through the output-control function. The architecture of this device prohibits the possibility of either output being pulsed twice during push-pull operation. 1

2 Block Diagram Output Control 13 RT CT DTC 1 IN ~ 0.1V Error Amplifier 1 OSCILLATOR Dead-Time Control Comparator PWM Comparator 0 D C 0 Q Q 0 0 Pulse-Steering Flip-Flop Q1 Q C1 E1 E2 C2 VCC 1 IN- 2 IN Error Amplifier 2 0.7mA Reference Regulator 14 VREF 2 IN Feedback GND Packages & Pin Assignment 2

3 Ordering Information Device PF SF Package DIP-16 SOP-16 Marking Information 3

4 Absolute Maximum Rating Symbol Characteristics Value Unit V CC Supply voltage, (see Note 1) 41 V V IN Amplifier Input Voltage Vcc+0.3 V V OUT Collector Output Voltage 41 V I OUT Collector Output Current 250 ma P D Power Dissipation See Dissipation Rating Table T OPR Operating free-air Temperature Range -25~85 C T STG Storage Temperature Range -65 to +150 C T LEAD Lead temperature 1.6mm (1/16 inch) from case for 10 seconds 260 C T J Operating Junction Temperature Range 125 C *Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Note 1: All voltage values, except differential voltages, are with respect to the network ground terminal. Package T A 25 C Power Rating Dissipation Rating Table Derating Factor Derate Above T A T A =70 C Power Rating T A =85 C Power Rating SOP mW 7.6mW/ C 25 C 558mW 444mW DIP mW 9.2mW/ C 41 C 733mW 595mW Recommended Operating Conditions Symbol Characteristics Min Max Unit V CC Supply voltage 7 40 V V IN Amplifier input voltage -0.3 Vcc-2 V V OUT Collector output Voltage, Vo 40 V I OUT1 ; I OUT2 Collector output current (each transistor) 200 ma Current into feedback terminal 0.3 f OSC Oscillator frequency, f OSC khz C T Timing capacitor nf R T Timing resistor kω T A Operating free-air temperature 0 70 C 4

5 Electrical Characteristics (V CC =15V, f=10khz,t A =25 C) Referfnce Section Parameter Test Conditions Min Typ** Max Unit Output voltage (REF) I O =1mA V I O =1mA, TA=25 C Input regulation V CC =7V to 40V 2 mv Output regulation I O =1mA to10 ma 1 mv Short-circuit output current REF=0v 25 ma Oscillator Section (see Figure 1) Parameter Test Conditions* Min Typ** Max Unit Frequency Standard deviation of frequency Frequency change with voltage C T =0.01uF, R T =12K, T A =25 C All values of V CC, C T, R T, and T A constant V CC =7V to 40V, T A =25 C khz 100 Hz/kHz 1 Hz/kHz Error Amplifier Section (see Figure 2) Parameter Test Conditions Min Typ Max Unit Input offset voltage V O(FEEDBACK) =2.5V 2 mv Input offset current V O(FEEDBACK) =2.5V 25 na Input bias current V O(FEEDBACK) =2.5V 0.2 μa Open-loop voltage amplification ΔV O =3V, R L =2kΩ, V O =0.5V to 3.5V 95 db Unity-gain bandwidth V O =0.5V to 3.5V, R L =2kΩ 800 khz Common-mode rejection ratio ΔV O =40V, T A =25 C 80 db Output sink current (FEEDBACK) V ID =-15mV to-5v, V (FEEDBACK) =0.7V 0.7 ma *For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. **-All typical values except for parameter changes with temperature are at T A =25 C. ***-Duration of the short circuit should not exceed one second. Output Section Parameter Test Conditions Min Typ Max Unit Collector off-state current V CE =40V, V CC =40V μa Emitter off-state current V CC = V C =40V, V E =0-100 μa Collector-emitter saturation voltage Common emitter Emitter follower V E =0, I C = 200mA V O (c1 or c2)=15v, I E = -200mA Output control input current V F = V REF 3.5 ma V All typical values except for temperature coefficient are at T A =25 C. 5

6 Dead-time control section (see Figure 1) Parameter Test Conditions Min Typ Max Unit Input bias current (DEAD-TIME CTRL) V I =0 to 5.25V μa Maximum duty cycle, each output Input threshold voltage (DEAD-TIME CTRL) V I(DEAD-TIME CTRL) =0, C T =0.1μF, R T =12kΩ 45% Zero duty cycle V Maximum duty cycle 0 All typical values except for temperature coefficient are at T A =25 C. PWM Comparator section (see Figure 1) Parameter Test Conditions MIN Typ Max Unit Input threshold voltage (FEEDBACK) Zero duty cycle V Input sink current (FEECBACK) V (FEEDBACD) =0.7V ma All typical values except for temperature e coefficient are at T A =25 C Total Device Standby supply current Average supply current Parameter Test Conditions Min Typ Max Unit Switching Characteristics, T A =25 C R T = V REF, All other inputs and outputs open V I(DEAD-TIME CTRL) =2, ( figure 1) All typical values except for temperature coefficient are at T A =25 C Parameter Test Conditions Min Typ Max Unit Rise time Common-emitter ns Fall time configuration, See Figure ns Rise time Emitter-follower ns Fall time configuration See Figure ns All typical values except for temperature coefficient are at T A =25 C. V CC =15V 6 10 V CC =40V 9 15 ma 7.5 ma 6

7 Operational Test Circuit and Voltage Waveforms VCC = 15V Test Inputs 12K DTC FeedBack RT 12 VCC C1 E O 200W 150O 200W Output uF 5 1 CT 1 IN+ E IN- C2 10 Output IN IN+ REF 14 50K 13 Output CTRL 7 GND Figure 1. Operational test circuit and waveforms 7

8 Typical Performance Characteristics VIN + - Error Amplifier Under Test FeedBack (PIN 3) + - Other Error Amplifier Figure 2. Amplifier Characteristics Each Output Circuit 15V 68Ω 2W Output CL=15pF t f t r 90% 90% 10% 10% TEST Circuit Figure 3. Common-Emitter Configuration Output Voltage Waveform Each Output Circuit 15V 90% 90% 10% 10% Output t r t f CL=15pF 68Ω 2W TEST Circuit Figure 4. Emitter-Follower Configuration Output Voltage Waveform 8

9 Typical Characteristics Oscillator Frequency And Frequency Variation Vs Timing Resistance f-oscillator Frequency and Frequency Varlation-Hz 100K 40K 10K 4K 1K % CT=1 F 1K 4K -1% 0% 0.1 F 0.01 F f=1% Vcc=15V TA= F 10K 40K 100K 400 1M RT-Tim ing Resistance- Figure 6 Figure 5 Frequency variation(δf) is the change in oscillator frequency that occurs over the full temperature range A-Amplifier Voltage Amplification-dB Vcc=15V V o = 3 V T A = K 10K 100K 1M f-f re q uency -H z Figure 6 9

10 Package Dimension SOP-16 PLASTIC PACKAGE Dimensions Symbol Millimeters Inches Min Max Min Max A A A B C D E E e 1.270TYP 0.050TYP L Q

11 DIP-16 PLASTIC PACKAGE Dimensions Symbol Millimeters Inches Min Max Min Max A A A B B TYP 0.060TYP C D E E TYP 0.300TYP e 2.540TYP 0.100TYP L E

12 NOTICE Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor. CONTACT US GS Headquarter 4F.,No.43-1,Lane11,Sec.6,Minquan E.Rd Neihu District Taipei City 114, Taiwan (R.O.C) Wu-Xi Branch No.21 Changjiang Rd., WND, Wuxi, Jiangsu, China (INFO. &. TECH. Science Park Building A 210 Room) sales_cn@gs-power.com RD Division 824 Bolton Drive Milpitas. CA Version_1.2 Notice

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