MM5120 DC to 12GHz SP4T Digital-Micro-Switch

Size: px
Start display at page:

Download "MM5120 DC to 12GHz SP4T Digital-Micro-Switch"

Transcription

1 Advance Product Overview Features: DC to 12GHz Frequency Range 25 Watt (CW), 150W (Pulsed) Max Power Handling Low On-State Insertion Loss < GHz High-linearity, IIP3 > 85dBm -25dB 6GHz Maximum voltage (AC or DC): +300 Volt on RF Input < 10us On/Off Switching Time High Reliability > 3 Billion Switching Operations Integrated Analog Gate Control w/hv Boost Hermetic 4mm x 4mm QFN Package Applications: Switched filter banks and tunable filters High power RF front ends (TX/RX) Low-loss switch matrices RF EM relay replacement Markets: Defense and Aerospace Test and Measurement Systems Wireless Infrastructure Description: The MM5120 is a high-power micro-mechanical switch offered by Menlo Micro, which has developed a new Digital-Micro-Switch (DMS) fabrication process and applied it to DC and RF/microwave switch applications. The innovative DMS technology enables highly reliable micro-mechanical switches capable of > 25 watts in a very small SMT package. The MM5120 provides ultra-low insertion loss and superior linearity from 12GHz down to DC, with greater than 3 billion switching cycles guaranteed at elevated +85ºC temperatures. An integrated analog gate controller allows the user the option to provide the required high-voltage gate signal externally, or to generate it internally. The MM5120 is an ideal solution for replacing bulky and less reliable RF electromechanical relays, as well as RF/microwave solid-state switches where linearity and insertion loss are critical parameters. Page 1 Doc Rev. MM5120 v0.7 PRELIMINARY

2 Advance Electrical Characteristics Table 1 Recommended Operating Conditions Parameter Minimum Typical Maximum Unit Operating Frequency Range DC 6 12 GHz CW Power / 6GHz 25 W Peak Power / 10% Duty Cycle 150 W Insertion 6GHz 0.35 db Insertion 12GHz 0.5 db Input / Output Return 6GHz 15 db On / Off 6GHz 25 db On / Off 12GHz 20 db Channel to Channel 6GHz 25 db Max Rated Voltage +/-300 VDC Third-Order Output Intercept (OIP3) > 85 dbm Second-Order Output Intercept (OIP2) > 125 dbm On / Off Switching Time 8 sec Full Cycle Frequency 10 KHz On / Off Switch Operations 3x10 9 Cycles Steady State Carry Current 600 ma Hot Switching 1 Volt 10 ma Leakage 200 Volts < 25 pa On-State Resistance mω High Voltage Gate Bias (VBB) VDC Low Voltage Supply (VDD) VDC Operating Temperature Range ºC Page 2 Doc Rev. MM5120 v0.7 PRELIMINARY

3 Advance Package Information Figure 1 MM5120 package and pinout (Top View) Table 2 Detailed Pin Description Pin # Function Description Pin # Function Description 1 RFG RF Ground Reference 15 RF2 RF2 Output 2 DNC Do Not Connect 17,18 DNC Do Not Connect 3 VSS Supply Voltage Return 22 RF1GATE Gate for RF1 4 VDDHV High Voltage Bias 21 RF2GATE Gate for RF2 5 VBST Boost node 20 RF3GATE Gate for RF3 6 VDD Low Voltage Bias 19 RF4GATE Gate for RF4 7 VDD10 Optional LV Bias 26 RF3 RF3 Output 8 DNC Do Not Connect 25,28,30 RFG RF Ground Reference 9,11,14,16 RFG RF Ground Reference 31 RF4 RF4 Output 10 RF1 RF1 Output 29 RFC RF Common (Input) 12,13 DNC Do Not Connect 23,24,27,32 DNC Do Not Connect Page 3 Doc Rev. MM5120 v0.7 PRELIMINARY

4 Modes of operation The MM5120 allows the user to provide the 70V gate bias required to drive the switch externally, or to have the MM5120 create the 70V gate bias internally through a dedicated boost circuit. If using external 70V: VDDHV = high voltage supply 70V max VBST = DO NOT CONNECT VDD = 3.3V If using internal 70V: VDDHV = DO NOT CONNECT VBST = inductor between VBST and VDD VDD = 3.3V (inductor between VBST and VDD) The MM5120 allows the user to provide a 3V gate control signal required to turn the switch on and off, or to provide an alternate gate control signal which can be at any voltage from 3V to 10V. If using VDD 3V: VDD = 3V VDD10 = tie to VDD If using VDD10 (3V to 10V gate control signal): VDD = NO CONNECT VDD10 = desired gate voltage Page 4 Doc Rev. MM5120 v0.7 PRELIMINARY

5 Advance Package Information Figure 2 Package Mechanical Details Page 5 Doc Rev. MM5120 v0.7 PRELIMINARY

6 Advance RF Performance (3D simulated) insertion loss (db) INSERTION LOSS Frequency (GHz) ISOLATION isolation (db) Frequency (GHz) Figure 3 MM5120 Insertion Loss and Isolation Page 6 Doc Rev. MM5120 v0.7 PRELIMINARY

7 Important Information Disclaimer The data presented in this document is for informational purposes only and shall in no event be regarded as a guarantee of conditions or characteristics. Any warranty or license for this product shall be specified and governed by the terms of a separate purchase agreement. Menlo Micro does not assume any liability arising out of the application or use of this product; neither does it convey any license under its patent rights, nor the rights of others. Menlo Micro reserves the right to make changes in these specifications and features shown herein to improve reliability, function and design, or discontinue of this product, at any time without notice or obligation. Contact our product representative for the most current information. Warning This product is not authorized for use: 1) In any life support systems. 2) Applications for implanting into the human body, without the express written approval from Menlo Micro. Trademark Notices All trademarks and product service marks is owned by Menlo Microsystems, Inc. Contact Information Please contact Menlo Micro for the latest specifications, additional product information, test and evaluation boards, product samples, worldwide sales and distribution locations: Internet: sales@menlomicro.com For product technical questions and application information: support@menlomicro.com Page 7 Doc Rev. MM5120 v0.7 PRELIMINARY

<DRAFT> MM W 12GHz SPDT Digital-Micro-Switch. Preliminary Product Overview

<DRAFT> MM W 12GHz SPDT Digital-Micro-Switch. Preliminary Product Overview Preliminary Product Overview Features: DC to > 12GHz Frequency Range 25 Watt (CW), 150W (Pulsed) Max Power Handling Low On-State Insertion Loss < 0.35 db @ 6GHz High-linearity, IIP3 > 85dBm -25dB Isolation

More information

Preliminary Product Overview

Preliminary Product Overview Preliminary Product Overview Features DC to > 3 GHz Frequency Range 25 Watt (CW), 200W (Pulsed) Max Power Handling Low On-State Insertion Loss, typical 0.3 db @ 3 GHz Low On-State Resistance < 0.75 Ω 25dB

More information

Preliminary. MM7100 High-Voltage SPST Digital-Micro-Switch. Product Overview PRELIMINARY DATA SHEET, SEE PAGE 11 FOR DETAILS

Preliminary. MM7100 High-Voltage SPST Digital-Micro-Switch. Product Overview PRELIMINARY DATA SHEET, SEE PAGE 11 FOR DETAILS MM7100 High-Voltage SPST Digital-Micro-Switch Product Overview Features: Frequency Range: DC to 750 MHz Low On-State Resistance < 0.30Ω (typ.) Rated Voltage (AC or DC): 400V Rated Current (AC or DC): 2A

More information

<DRAFT> MM5110 Digital-Micro-Switch 100W SPST. Product Specification

<DRAFT> MM5110 Digital-Micro-Switch 100W SPST. Product Specification MM5110 Digital-Micro-Switch 100W SPST Product Specification Features: DC to > 6 GHz Frequency Range 100 Watt (50 dbm) Maximum Power Low On-State Insertion Loss < 0.2 db @ 3 GHz -15 db Off-State Isolation

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML09231H is a single--stage low noise amplifier (LNA) with active bias and high isolation for

More information

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS Absorptive Coaxial SP3T Switch 0.5-50GHz Electrical Specifications, T A = +25 C, Vdd = +5V/-5V, TTL = 0 / +5V Description PN: SP3T Absorptive Switch Low Power Cold Switching Parameter Min Typ Max Min Typ

More information

2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT

2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT Freescale Semiconductor Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3--stage power amplifier targeted at driver and pre--driver

More information

PE42412 Document Category: Product Specification

PE42412 Document Category: Product Specification PE2 Document Category: Product Specification UltraCMOS, 1 MHz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.3 @ 6 GHz Fast switching time of 2 ns Power handling of m CW Logic select (LS)

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT--89 standard

More information

PE42020 Product Specification

PE42020 Product Specification Product Specification, Hz 8 MHz Features High power handling 3 m @ DC 36 m @ 8 GHz Maximum voltage (DC or AC peak): ±1V on the RF ports Total harmonic distortion (THD): 84 c Configurable 5Ω absorptive

More information

PE42482 Document Category: Product Specification

PE42482 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 1 MHz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz Fast switching time of 227 ns Power handling of m CW Logic select (LS) pin

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML25231H is a single--stage low noise amplifier (LNA) with active bias and high isolation for

More information

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense,

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML09212H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use

More information

Single stage LNA for GPS Using the MCH4009 Application Note

Single stage LNA for GPS Using the MCH4009 Application Note Single stage LNA for GPS Using the MCH49 Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s MCH49 which is used as a Low Noise Amplifier (LNA) for GPS (Global

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier

More information

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS 50W Broadband High Power Amplifier Module 500 2500MHz Electrical Specifications, T A = +25⁰C, Vdd = +28V Features Ultra-broadband Amplifier Module Small and lightweight Supply Voltage: +28V Parameter Min.

More information

PE42582 Document Category: Product Specification

PE42582 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz Fast switching time of 227 ns Power handling of m CW Logic select (LS) pin

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET AM744NA N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) 5 @ V GS = V 7 @ V GS = 4.5V ID (A) 5 4 Typical

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a 2--stage high efficiency InGaP HBT driver amplifier

More information

AND9518/D DAB L-band Amplifier using the NSVF4020SG4

AND9518/D DAB L-band Amplifier using the NSVF4020SG4 DAB L-band Amplifier using the NSVF4020SG4 Overview This application note explains about ON Semiconductor s NSVF4020SG4 which is used as a Low Noise Amplifier (LNA) for DAB (Digital Audio Broadcast). The

More information

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS Reflective Coaxial SP2T Switch 50 700MHz Electrical Specifications, TA = +25 C, Vdd = +5V/-28V, TTL = 0 / +5V Description Features Wide Band Operation 50-700MHz TTL compatible driver included Fast Switching

More information

2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT

2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver and pre--driver applications for macro

More information

Features. = +25 C, With 0/+5V Control, 50 Ohm System

Features. = +25 C, With 0/+5V Control, 50 Ohm System Typical Applications The HMC244AG16 is ideal for: Telecom Infrastructure Military Radios, Radar & ECM Space Applications Test Instrumentation Functional Diagram Features Low Insertion Loss:.9 Non-Reflective

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET AM734N N-Channel 3-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) 3 PRODUCT SUMMARY r DS(on) (mω) @ V GS = V 3 @ V GS = 4.5V ID(A) 6 4 Typical

More information

PE4257. Product Specification. Product Description

PE4257. Product Specification. Product Description Product Description The PE is a high-isolation UltraCMOS Switch designed for wireless applications, covering a broad frequency range from near DC up to 000 MHz. This single-supply SPDT switch integrates

More information

PE42512 Document Category: Product Specification

PE42512 Document Category: Product Specification PE2 Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.3 @ 6 GHz Fast switching time of 2 ns Power handling of m CW Logic select (LS)

More information

QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information .15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ9332B is a 2--stage, high linearity InGaP HBT broadband amplifier

More information

PE42562 Document Category: Product Specification

PE42562 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz Fast switching time of 21 ns Power handling of 33 m CW Logic select (LS)

More information

PE42823 Document Category: Product Specification

PE42823 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 7 MHz 6 GHz Features Excellent single-event peak power handling of 51 m LTE Exceptional linearity performance across all frequencies Input IP3: 7 m Input

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID (A) Typical Applications:

More information

PE Document Category: Product Specification

PE Document Category: Product Specification Document Category: Product Specification UltraCMOS, 1 MHz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz RF T RISE /T FALL time of 1 ns Power handling of 31 m CW Logic select (LS)

More information

QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information 0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8

More information

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier DATA SHEET SKY67107-306LF: 2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications LTE cellular infrastructure and ISM band systems Ultra low-noise, high gain and high linearity

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ9312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier

More information

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units 7-3 RF-LAMBDA DC-20 GHz Distributed Driver Amplifier Electrical Specifications, T A =25 Features Ultra wideband performance Positive gain slope High output power Low noise figure Microwave radio and VSAT

More information

Ultra-Low-Noise Amplifiers

Ultra-Low-Noise Amplifiers WHITE PAPER Ultra-Low-Noise Amplifiers By Stephen Moreschi and Jody Skeen This white paper describes the performance and characteristics of two new ultra-low-noise LNAs from Skyworks. Topics include techniques

More information

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS Ultra Wide Band Low Noise Amplifier 0.01GHz~10GHz Electrical Specifications, TA = 25, Vcc = 12V Features Gain: 28dB Typical Noise Figure: 2.5dB Typical High P1dB: 15dBm Typical Supply Voltage: 12V Parameter

More information

10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E

10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS

More information

TGM2543-SM 4-20 GHz Limiter/LNA

TGM2543-SM 4-20 GHz Limiter/LNA TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db

More information

Advanced Doherty Alignment Module (ADAM)

Advanced Doherty Alignment Module (ADAM) Freescale Semiconductor Technical Data Advanced Doherty Alignment Module (ADAM) The MMDS2254 is an integrated module designed for use in base station transmitters in conjunction with high power Doherty

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev. Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev. Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular

More information

434MHz LNA for RKE Using the 2SC5245A Application Note

434MHz LNA for RKE Using the 2SC5245A Application Note 434MHz LNA for RKE Using the 2SC5245A Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s 2SC5245A which is used as a Low Noise Amplifier (LNA) for RKE (Remote

More information

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier MMA051PP45 Datasheet DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of

More information

1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz

1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz GENERAL DESCRIPTION The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 db gain, 1200 Watts of pulsed RF output power at 32us,

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET AMP6-6B P-Channel 6-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -6 PRODUCT SUMMARY r DS(on) (mω) 6 @ V GS = -V 7 @ V GS = -4.5V ID(A)

More information

High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040

High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040 RF4 RF3 7 8 9 1 11 12 21 2 19 RF2 High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12. GHz ADRF54 FEATURES FUNCTIONAL BLOCK DIAGRAM Nonreflective 5 Ω design Positive control range: V to 3.3

More information

Product Specification PE45450

Product Specification PE45450 PE45450 Product Description The PE45450 is a HaRP technology-enhanced power limiter designed for use in high performance power limiting applications in test and measurement equipment, radar, military electronic

More information

= +25 C, With Vee = -5V & Vctl = 0/-5V

= +25 C, With Vee = -5V & Vctl = 0/-5V v.46.5db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications Features The HMC44AG6 is ideal for: Telecom Infrastructure Military Radios, Radar & ECM Space Applications Test Instrumentation Functional Diagram.5

More information

HIGH TEMPERATURE QUAD OPERATIONAL AMPLIFIER HT1104 APPLICATIONS FEATURES GENERAL DESCRIPTION PACKAGE PINOUT. HTMOS TM High Temperature Products

HIGH TEMPERATURE QUAD OPERATIONAL AMPLIFIER HT1104 APPLICATIONS FEATURES GENERAL DESCRIPTION PACKAGE PINOUT. HTMOS TM High Temperature Products HTMOS TM High Temperature Products HIGH TEMPERATURE QUAD OPERATIONAL AMPLIFIER HT FEATURES Specified Over -55 to +5 C Single or Split Supply Operation Common-Mode Input Voltage Range Includes Negative

More information

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, v2.617 AMPLIFIER, - 12 GHz Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated

More information

Application Note No. 158

Application Note No. 158 Application Note, Rev. 1.2, February 2008 Application Note No. 158 The BFP420 Transistor as a Low-Cost 900 MHz ISM Band Power Amplifier RF & Protection Devices Edition 2008-02-27 Published by Infineon

More information

Application Note No. 124

Application Note No. 124 Application Note, Rev. 1.2, September 2007 Low Noise Amplifier for 2.3 to 2.5 GHz Applications using the SiGe BFP640F Tranistor Small Signal Discretes Edition 2007-09-06 Published by Infineon Technologies

More information

Product Specification PE42821

Product Specification PE42821 Product Description The is a HaRP technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications. This switch

More information

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET AM3PE P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) - PRODUCT SUMMARY r DS(on) (mω) 8 @ V GS = -.5V @ V GS = -.5V ID (A) -5.6

More information

Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices

Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG

More information

Characteristic Symbol Value (2) Unit R JC 57 C/W

Characteristic Symbol Value (2) Unit R JC 57 C/W Freescale Semiconductor Technical Data BTS Driver Broadband Amplifier The is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal,

More information

RPAM0510A. 470 ~ 960 MHz Broadband Ultra Linear Power Amplifier 1. Absolute Maximum Ratings 2 : Key Features: Electrical Specifications: (at +25 o C)

RPAM0510A. 470 ~ 960 MHz Broadband Ultra Linear Power Amplifier 1. Absolute Maximum Ratings 2 : Key Features: Electrical Specifications: (at +25 o C) 47 ~ 96 MHz Broadband Ultra Linear Power Amplifier 1 RPAM51A is a broadband, high power, and high linearity amplifier. The amplifier offers exceptional +. db gain flatness, 31 db gain, 35 dbm P1dB and

More information

N-Channel Logic Level MOSFET

N-Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input prematched and designed for a broad

More information

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies from 900 to

More information

ARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005

ARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005 Technical Data Rev. 4, 1/25 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. PCS Band

More information

BROADBAND DISTRIBUTED AMPLIFIER

BROADBAND DISTRIBUTED AMPLIFIER ADM1-26PA The ADM1-26PA is a complete LO driver solution for use with all Marki mixers up to 26. GHz. This single-stage packaged GaAs MMIC distributed amplifier integrates all required biasing circuitry.

More information

TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

TGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM

More information

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db 100W Wide Band Power Amplifier 6GHz~18GHz Features Wideband Solid State Power Amplifier Psat: +50dBm Gain: 75 db Typical Supply Voltage: +48V On board microprocessor driven bias controller. Electrical

More information

Data Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes

Data Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726

More information

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to

More information

VHF 2.0 GHz LOW NOISE AMPLIFIER WITH PROGRAMMABLE BIAS

VHF 2.0 GHz LOW NOISE AMPLIFIER WITH PROGRAMMABLE BIAS Order this document by MC13144/D The MC13144 is designed in the Motorola High Frequency Bipolar MOSIAC V wafer process to provide excellent performance in analog and digital communication systems. It includes

More information

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units. DC - 20 GHz 2

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units. DC - 20 GHz 2 Typical Applications The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram Features

More information

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D The MRFIC Line The is an Integrated PA designed for linear operation in the MHz to. GHz frequency range. The design utilizes Motorola s advanced MOSAIC

More information

SKY , SKY LF: SP3T Switch for Bluetooth and b, g

SKY , SKY LF: SP3T Switch for Bluetooth and b, g DATA SHEET SKY325-349, SKY325-349LF: SP3T Switch for Bluetooth and 82.b, g Applications 82.b, g Bluetooth Zigbee TDMA/GSM/EDGE CDMA/WCDMA Other short-range wireless applications Simplified Block Diagram

More information

Features. = +25 C, Vdd = 5V

Features. = +25 C, Vdd = 5V v3.117 HMC1LH5 Typical Applications The HMC1LH5 is a medium PA for: Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation Functional Diagram Features Gain: 5 db Saturated

More information

AM4835P. Analog Power P-Channel 30-V (D-S) MOSFET THERMAL RESISTANCE RATINGS. Symbol Maximum Units

AM4835P. Analog Power P-Channel 30-V (D-S) MOSFET THERMAL RESISTANCE RATINGS. Symbol Maximum Units P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input matched and

More information

Characteristic Symbol Value (2) Unit R JC 92.0 C/W

Characteristic Symbol Value (2) Unit R JC 92.0 C/W Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output

More information

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier DATA SHEET SKY67106-306LF: 1.5-3.0 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications CDMA, WCDMA, TD-SCDMA, WiMAX, and LTE cellular infrastructure systems Ultra low-noise, high

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID(A) 7..5 Typical Applications:

More information

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse

More information

Advanced Doherty Alignment Module (ADAM)

Advanced Doherty Alignment Module (ADAM) Freescale Semiconductor Technical Data Advanced Doherty Alignment Module (ADAM) The MMDS9254 is an integrated module designed for use in base station transmitters in conjunction with high power Doherty

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

More information

Product Specification PE42520

Product Specification PE42520 PE42520 Product Description The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent

More information

Driver or Pre -driver Amplifier for Doherty Power Amplifiers

Driver or Pre -driver Amplifier for Doherty Power Amplifiers Technical Data Driver or Pre -driver Amplifier for Doherty Power Amplifiers The MMG30301B is a 1 W high gain amplifier designed as a driver or pre--driver for Doherty power amplifiers in wireless infrastructure

More information

U290/291. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS

U290/291. N-Channel JFETs. Vishay Siliconix PRODUCT SUMMARY FEATURES BENEFITS APPLICATIONS DESCRIPTION ABSOLUTE MAXIMUM RATINGS U9/9 N-Channel JFETs PRODUCT SUMMARY Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) U9. to 3 U9.5 to.5 7 FEATURES BENEFITS APPLICATIONS Low On-Resistance: U9 < 3 Fast Switching

More information

SKY LF: 2000 to 3000 MHz Low-Noise Power Amplifier Driver

SKY LF: 2000 to 3000 MHz Low-Noise Power Amplifier Driver DATA SHEET SKY65081-70LF: 2000 to 3000 MHz Low-Noise Power Amplifier Driver Applications UHF television TETRA radios 2.5G, 3G handsets ISM band transmitters WCS fixed wireless 802.16 WiMAX 3GPP LTE Features

More information

Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family Application Note Rev., 1/3 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Quiescent Current Thermal Tracking Circuit in the RF Integrated

More information

P-Channel 150-V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET AM9P P-Channel 5-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -5 PRODUCT SUMMARY r DS(on) (Ω). @ V GS = -V. @ V GS = -4.5V ID(A) -.9 -.8

More information

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units Typical Applications The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram Features

More information

AMPLIFIER/DOUBLER/AMPLIFIER

AMPLIFIER/DOUBLER/AMPLIFIER AMPLIFIER/DOUBLER/AMPLIFIER ADA-2052 1. Device Overview 1.1 General Description The ADA-2052 can be used as a frequency extender to enhance the frequency range of a

More information

Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System

Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System Ultra Wide Band Low Noise Amplifier 0.5 46GHz Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.5 20 20 46 GHz Gain 13 13 db Gain Variation Over Temperature (-45 ~ +85) ±3 ±2 db Noise Figure

More information

Parameter Min. Typ. Max. Min. Typ. Max. Units

Parameter Min. Typ. Max. Min. Typ. Max. Units 25W Wide Band Power Amplifier 20-6000MHz Features Wideband Solid State Power Amplifier Psat: +45dBm Typical Gain: 50dB Typical Supply Voltage: +60V DC Electrical Specifications, T A =25 Parameter Min.

More information

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +30

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +30 AMT-AN0145 60 MHz to 70 MHz Non-Magnetic Low Noise Amplifier Data Sheet Features Non-Magnetic Material Integrated Diode protection Frequency Range 60 to 70 MHz (1.5T) Typical Noise Figure < 0.28 db Typical

More information

SKY : 900 MHz Transmit/Receive Front-End Module

SKY : 900 MHz Transmit/Receive Front-End Module DATA SHEET SKY65313-21: 900 MHz Transmit/Receive Front-End Module Applications Automated meter reading Advanced metering infrastructure ISM systems Features Transmit output power > +30.5 dbm High efficiency

More information

Absolute Maximum Ratings Parameter Rating Unit Voltage 6.0 V Maximum input power (0.6 GHz to 2.5 GHz), RF1, RF2 +28 dbm Operating temperature -30 to +

Absolute Maximum Ratings Parameter Rating Unit Voltage 6.0 V Maximum input power (0.6 GHz to 2.5 GHz), RF1, RF2 +28 dbm Operating temperature -30 to + Product Overview The is a single-pole double-throw (SPDT) switch designed for general purpose switching applications which require very low insertion loss and medium power handling capability. The is ideally

More information

2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range

2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range 2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz Features Wideband Solid State Power Amplifier Gain: 37dB Typical Psat 35dBm Typical Electrical Specifications, TA = +25⁰C, Vcc = +12V. Parameter Min. Typ.

More information

OBSOLETE. 9 khz. Operation Frequency 9 khz. db 6000 MHz. db Return Loss RF1, RF2 and RFC

OBSOLETE. 9 khz. Operation Frequency 9 khz. db 6000 MHz. db Return Loss RF1, RF2 and RFC Product Description The PE455 RF Switch is designed to support the requirements of the test equipment and ATE market. This broadband general purpose switch maintains excellent RF performance and linearity

More information

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma* v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use

More information

FDPC4044. Common Drain N-Channel PowerTrench MOSFET. FDPC4044 Common Drain N-Channel PowerTrench MOSFET. 30 V, 27 A, 4.

FDPC4044. Common Drain N-Channel PowerTrench MOSFET. FDPC4044 Common Drain N-Channel PowerTrench MOSFET. 30 V, 27 A, 4. FDPC444 Common Drain N-Channel PowerTrench MOSFET 3 V, 7 A, 4.3 mω Features Max r SS(on) = 4.3 mω at V GS = V, I SS = 7 A Max r SS(on) = 6.4 mω at V GS = 4.5 V, I SS = 3 A Pakage size/height: 3.3 x 3.3

More information