<DRAFT> MM5110 Digital-Micro-Switch 100W SPST. Product Specification

Size: px
Start display at page:

Download "<DRAFT> MM5110 Digital-Micro-Switch 100W SPST. Product Specification"

Transcription

1 MM5110 Digital-Micro-Switch 100W SPST Product Specification Features: DC to > 6 GHz Frequency Range 100 Watt (50 dbm) Maximum Power Low On-State Insertion Loss < GHz -15 db Off-State 3 GHz Ultra Low On-State Resistance < 0.3 Ω Maximum voltage (AC or DC): +200V on RF input < 10 µsec On/Off Switching Time Stable Switch Resistance up to +85ºC Hermetic 7mm x 7mm x 1.8mm CLCC Package Applications: Scientific and Medical Automated Test Systems Wireless Infrastructure Industrial Automation Defense and Aerospace Functional Diagram: Description: The MM-5110 is a high power 100W SPST micro-mechanical switch offered by Menlo Microsystems that has developed a new MetalMEMS fabrication process and applied it to DC and wideband RF/microwave switch applications. This innovative process technology has enabled robust and highly reliable switches capable of withstanding 200 volts at more than 1A using only picoamps of switch current during operation. The switch contacts provide very low on-state resistance and high off-state isolation from DC to 6 GHz with > 1B cold switching cycles at operating temperatures up to 85ºC. An external supply +80 VDC bias source for the switch driver is required. Page 1 Doc.Rev 5110.A

2 Operating Characteristics Absolute Maximum Ratings Exceeding the maximum ratings as listed in Table 1 may reduce the reliability of the device or cause permanent damage. Operation of the MEMS switch should be restricted to the limits indicated in Table 2 recommended operating conditions listed below. Electrostatic Discharge (ESD) Safeguards When handling this MEMS switch, observe the same precautions as with any other ESD sensitive devices. Even though this MEMS switch device is protected from ESD damage. Precautions must be taken to avoid exceeding the ratings specified in Table 1.0 below. Susceptibility to Latch-Up This MEMS switch device is generally not susceptible to switch latch-up conditions which can occur in some semiconductor switch devices used in RF/microwave applications. Table 1 Maximum Ratings Parameter Minimum Maximum Unit High Voltage Bias Supply, VBB Volt RF/Microwave Input Power (1) 100 / 50 W / dbm Operating Frequency Range (2) DC 6 GHz Switch Rating Voltage 200 V (DC) Switch Rating Current 1A A (DC) Operating Temperature Range C ESD Voltage All Pins (3) 250 Volt Storage Temperature Range ºC Notes: 1) All parameters must be within recommended operating conditions. Maximum DC and RF power can only be applied during the on-state condition. No hot switching. 2) For RF/microwave applications high frequency performance can be improved by external matching. 3) Machine model JEDEC Standard JESD22 A115. Page 2 Doc.Rev 5110.A

3 Detailed Electrical Characteristics Table 2 Recommended Operating Conditions Parameter Minimum Typical Maximum Unit Frequency Range DC 6 GHz Power per Channel Continuous 100 / 50 W / dbm Insertion 3 GHz 0.16 db Return 3 GHz 37 db On-Off 3 GHz 21 db Switch Rated Voltage 200 VDC Third-Order Intercept (IP3) >85 dbm Second-Order Intercept (IP2) >85 dbm Switching Time 10 µsec Full Cycle Frequency 20 KHz Switch Operations 10 9 Cycles Steady State Current 1500 ma Hot Switching Current 10 ma Peak pulse current (< 1 msec) 3000 ma Leakage 200 Volts < 25 pa On-State Resistance mω High Voltage Gate Bias (VBB) VDC Operating Temperature Range ºC Page 3 Doc.Rev 5110.A

4 Metal MEMS 6-Channel SPST Switch Typical Performance Characteristics Figure 1 Insertion Loss to 6GHz Figure 2 isolation to 6GHz Figure 3 Transient Carry Current vs Time (T=25ºC) Figure 4 Leakage Current vs Voltage (Off-State) Page 4 Doc.Rev 5110.A

5 Metal MEMS 100W SPST Switch 44-Lead Ceramic LCC Figure 15 Pinout Configuration (Top View) Table 3 Detailed Pin Description Pin # Function Description Pin # Function Description 1-9 GND Package Ground 36 N/C N/C 10 N/C Do Not Connect 37 N/C N/C GND Package Ground 38 GND Package Ground 16 RF IN RF Input (Beam) 39 N/C N/C 17 GND Package Ground 40 GND Package Ground 18 N/C N/C 41 RF OUT RF Output (Contact) 19 N/C N/C GND Package Ground 20 GND Package Ground 21 Gate Ext Gate Supply GND Package Ground Page 5 Doc.Rev 5110.A

Preliminary Product Overview

Preliminary Product Overview Preliminary Product Overview Features DC to > 3 GHz Frequency Range 25 Watt (CW), 200W (Pulsed) Max Power Handling Low On-State Insertion Loss, typical 0.3 db @ 3 GHz Low On-State Resistance < 0.75 Ω 25dB

More information

Preliminary. MM7100 High-Voltage SPST Digital-Micro-Switch. Product Overview PRELIMINARY DATA SHEET, SEE PAGE 11 FOR DETAILS

Preliminary. MM7100 High-Voltage SPST Digital-Micro-Switch. Product Overview PRELIMINARY DATA SHEET, SEE PAGE 11 FOR DETAILS MM7100 High-Voltage SPST Digital-Micro-Switch Product Overview Features: Frequency Range: DC to 750 MHz Low On-State Resistance < 0.30Ω (typ.) Rated Voltage (AC or DC): 400V Rated Current (AC or DC): 2A

More information

<DRAFT> MM W 12GHz SPDT Digital-Micro-Switch. Preliminary Product Overview

<DRAFT> MM W 12GHz SPDT Digital-Micro-Switch. Preliminary Product Overview Preliminary Product Overview Features: DC to > 12GHz Frequency Range 25 Watt (CW), 150W (Pulsed) Max Power Handling Low On-State Insertion Loss < 0.35 db @ 6GHz High-linearity, IIP3 > 85dBm -25dB Isolation

More information

MM5120 DC to 12GHz SP4T Digital-Micro-Switch

MM5120 DC to 12GHz SP4T Digital-Micro-Switch Advance Product Overview Features: DC to 12GHz Frequency Range 25 Watt (CW), 150W (Pulsed) Max Power Handling Low On-State Insertion Loss < 0.35 db @ 6GHz High-linearity, IIP3 > 85dBm -25dB Isolation @

More information

0.5-4 GHz 6-Bit Digital Attenuator

0.5-4 GHz 6-Bit Digital Attenuator .5-4 GHz 6-Bit Digital Attenuator Features Frequency Range :.5 to 4 GHz 31.5dB Attenuation Range.5dB resolution 4.5 db Insertion loss max. +.4dB Attenuation Error 5Ω Impedance 1 Typical Phase variation.2

More information

S Band 7 Bit Digital Attenuator

S Band 7 Bit Digital Attenuator S Band 7 Bit Digital Attenuator Features Frequency Range: 2.8-3.8 GHz Low Insertion Loss 4 db(typ.) Max. Attenuation of 31.75 db RMS Amplitude Error < 0.3 db Input & Output Return Loss > 12 db 32 Lead

More information

Features. = +25 C, Vdc = +7V

Features. = +25 C, Vdc = +7V amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain:

More information

MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3

MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3 Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free

More information

MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2

MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2 MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The

More information

Parameter Min Typ Max Units Frequency Range

Parameter Min Typ Max Units Frequency Range Features Low loss broadband performance High isolation Fast switching speed Non-reflective design - RF1 and RF2 Small die size Description Functional Block Diagram RF1 RF2 1 2 The CMD204 die is a general

More information

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units

DC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units 7-3 RF-LAMBDA DC-20 GHz Distributed Driver Amplifier Electrical Specifications, T A =25 Features Ultra wideband performance Positive gain slope High output power Low noise figure Microwave radio and VSAT

More information

2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range

2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range 2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz Features Wideband Solid State Power Amplifier Gain: 37dB Typical Psat 35dBm Typical Electrical Specifications, TA = +25⁰C, Vcc = +12V. Parameter Min. Typ.

More information

Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V

Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -67 dbc/hz @ khz Noise Figure: 4.5 db Gain:

More information

MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db

MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db Features Integrated Directional Coupler Low Insertion Loss: 0.15 db @ 4 GHz Min. detectable power: -15 dbm @ 4 GHz Dynamic range: 45 db @ 4 GHz Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm

More information

MAOC Preliminary Information. Broadband Voltage Controlled Oscillator 6-12 GHz Preliminary - Rev. V3P. Features. Block Diagram.

MAOC Preliminary Information. Broadband Voltage Controlled Oscillator 6-12 GHz Preliminary - Rev. V3P. Features. Block Diagram. Features Octave Tuning Bandwidth Phase Noise: -95 dbc/hz @ 100 khz V TUNE Range: 0-23 V Low Current Consumption: 58 ma Excellent Temperature Stability +5 V Bias Supply Lead-Free 4 mm 24-Lead Package RoHS*

More information

MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2.

MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2. Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package

More information

Features. Gain Variation Over Temperature db/ C

Features. Gain Variation Over Temperature db/ C HMC-C26 Features Typical Applications The HMC-C26 Wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Gain: 3 db

More information

GHz RF Front-End Module. o C

GHz RF Front-End Module. o C Functional Block Diagram Features 4 High Efficient Power Amplifier: 41% at Pout= 23dBm -PA P-1dB: +21dBM Typical @ +3.3V-PA Low Noise Amplifier (NF typical 1.8dB)-LNA Low Insertion Loss:0.4dB@ 2.45GHz-Switch

More information

Classification Structure Packaging Package quantity Model Single-side stable Plastic sealed JEDEC Tray 200 2SMES-01 IC Pack 50 2SMES-01CT

Classification Structure Packaging Package quantity Model Single-side stable Plastic sealed JEDEC Tray 200 2SMES-01 IC Pack 50 2SMES-01CT RF MEMS Switch Surface-mount,10 GHz Band (typical), Miniature, SPDT-NO, RF MEMS Switch Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) Isolation of 30 db Insertion loss of

More information

PE42482 Document Category: Product Specification

PE42482 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 1 MHz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz Fast switching time of 227 ns Power handling of m CW Logic select (LS) pin

More information

GHz 6-Bit Digital Phase Shifter Module

GHz 6-Bit Digital Phase Shifter Module 5. 6.5 GHz 6-Bit Digital Phase Shifter Module Features Frequency Range: 5. to 6.5 GHz Low RMS Phase Error ~ 4 o 8.5 db Maximum Insertion Loss 23dBm Input P 1dB Integrated TTL driver SMA (RF) / D-type(control)

More information

BROADBAND DISTRIBUTED AMPLIFIER

BROADBAND DISTRIBUTED AMPLIFIER ADM1-26PA The ADM1-26PA is a complete LO driver solution for use with all Marki mixers up to 26. GHz. This single-stage packaged GaAs MMIC distributed amplifier integrates all required biasing circuitry.

More information

RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1

RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1 Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead

More information

SP4T RF Switch 50 Ω Absorptive RF switch 1 to 6000 MHz Internal driver, Single Supply Voltage 2.3V to 3.6V

SP4T RF Switch 50 Ω Absorptive RF switch 1 to 6000 MHz Internal driver, Single Supply Voltage 2.3V to 3.6V Solid state SP4T RF Switch 50 Ω Absorptive RF switch 1 to 00 MHz Internal driver, Single Supply Voltage 2.3V to 3.6V The Big Deal High isolation, 57 db up to 2.7 GHz High linearity, IP3 +58 dbm at 1900

More information

RF1. Parameter Min Typ Max Units Frequency Range

RF1. Parameter Min Typ Max Units Frequency Range Features Functional Block Diagram Low loss broadband performance High isolation Fast switching speed Reflective design Small die size Description RFC 1 The CMD230 is a general purpose broadband high isolation

More information

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

Features. = +25 C, +Vdc = +6V, -Vdc = -5V v3.7 WIDEBAND LNA MODULE, - 2 GHz amplifiers Typical Applications The Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Industrial Sensors Functional

More information

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db

100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db 100W Wide Band Power Amplifier 6GHz~18GHz Features Wideband Solid State Power Amplifier Psat: +50dBm Gain: 75 db Typical Supply Voltage: +48V On board microprocessor driven bias controller. Electrical

More information

Parameter Min Typ Max Units Frequency Range

Parameter Min Typ Max Units Frequency Range Features Low loss broadband performance High isolation Fast switching speed Non-reflective design Small die size Functional Block Diagram B A 3 4 5 2 RFC A B 6 Description The CMD196 is a general purpose

More information

Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System

Ultra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System Ultra Wide Band Low Noise Amplifier 0.5 46GHz Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.5 20 20 46 GHz Gain 13 13 db Gain Variation Over Temperature (-45 ~ +85) ±3 ±2 db Noise Figure

More information

Product Specification PE45450

Product Specification PE45450 PE45450 Product Description The PE45450 is a HaRP technology-enhanced power limiter designed for use in high performance power limiting applications in test and measurement equipment, radar, military electronic

More information

PE42412 Document Category: Product Specification

PE42412 Document Category: Product Specification PE2 Document Category: Product Specification UltraCMOS, 1 MHz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.3 @ 6 GHz Fast switching time of 2 ns Power handling of m CW Logic select (LS)

More information

SKY , SKY LF: SP3T Switch for Bluetooth and b, g

SKY , SKY LF: SP3T Switch for Bluetooth and b, g DATA SHEET SKY325-349, SKY325-349LF: SP3T Switch for Bluetooth and 82.b, g Applications 82.b, g Bluetooth Zigbee TDMA/GSM/EDGE CDMA/WCDMA Other short-range wireless applications Simplified Block Diagram

More information

Product Specification PE42520

Product Specification PE42520 PE42520 Product Description The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless applications. This broadband general purpose switch maintains excellent

More information

MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3

MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3 Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package

More information

5 6.4 GHz 2 Watt Power Amplifier

5 6.4 GHz 2 Watt Power Amplifier 5 6.4 GHz 2 Watt Power Amplifier Features Frequency Range : 5 6.4GHz 32.5 dbm output P1dB 9 db Power gain 32% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 12 db Dual bias operation No external

More information

1.0 6 GHz Ultra Low Noise Amplifier

1.0 6 GHz Ultra Low Noise Amplifier 1.0 6 GHz Ultra Low Noise Amplifier Features Frequency Range: 1.0-6 GHz 0.7 db mid-band Noise Figure 18 db mid band Gain 13dBm Nominal P1dB Bias current : 50mA 0.15-um InGaAs phemt Technology 16-Pin QFN

More information

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items. The is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The is designed to provide optimal LO drive for T3 mixers. Typically, ADM-26-2931SM provides. db

More information

SKY LF: 10 MHz GHz Six-Bit Digital Attenuator with Driver (0.5 db LSB, 31.5 db Range)

SKY LF: 10 MHz GHz Six-Bit Digital Attenuator with Driver (0.5 db LSB, 31.5 db Range) DATA SHEET SKY12353-470LF: 10 MHz - 1.0 GHz Six-Bit Digital Attenuator with Driver (0.5 db LSB, 31.5 db Range) Applications Cellular base stations Wireless data transceivers Broadband systems Features

More information

PE42582 Document Category: Product Specification

PE42582 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz Fast switching time of 227 ns Power handling of m CW Logic select (LS) pin

More information

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

Features. = +25 C, +Vdc = +6V, -Vdc = -5V HMC-C59 v.59 WIDEBAND LNA MODULE, - 2 GHz Typical Applications The HMC-C59 Wideband LNA is ideal for: Telecom Infrastructure Features Noise Figure:.8 db @ 8 GHz High Gain: 6 db @ 8 GHz PdB Output Power:

More information

PE42823 Document Category: Product Specification

PE42823 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 7 MHz 6 GHz Features Excellent single-event peak power handling of 51 m LTE Exceptional linearity performance across all frequencies Input IP3: 7 m Input

More information

MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3

MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3 Features Positive Voltage Control High Isolation: 62 db @ 1 GHz 65 db @ 2 GHz Low Insertion Loss: 0.65 db @ 1 GHz 0.70 db @ 2 GHz 50 Ω Internal Terminations Fast Settling for Low Gate Lag requirements

More information

16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package

16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package Linear Gain Description GaAs Monolithic Microwave IC in SMD package The is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard phemt process:

More information

8W Wide Band Power Amplifier 1GHz~22GHz

8W Wide Band Power Amplifier 1GHz~22GHz 8W Wide Band Power Amplifier 1GHz~22GHz Features Wideband Solid State Power Amplifier Gain: 50 db Typical Psat: +39 dbm Supply Voltage: +36V Electrical Specifications, T A = +25⁰C Typical Applications

More information

Features. = +25 C, Vdd = +5 Vdc, 50 Ohm System. trise, tfall (10/90% RF) ton, toff (50% CTL to 10/90% RF)

Features. = +25 C, Vdd = +5 Vdc, 50 Ohm System. trise, tfall (10/90% RF) ton, toff (50% CTL to 10/90% RF) Typical Applications The HMC174MS8 / HMC174MS8E is ideal for: ISM Applications PCMCIA Wireless Cards Portable Wireless Features Ultra Small Package: MSOP8 High Third Order Intercept: +60 m Single Positive

More information

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL NUMBER: HILNA LS

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL NUMBER: HILNA LS USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL NUMBER: HILNA LS RF, Wireless, and Embedded Systems Engineering NUWAVES ENGINEERING 132 EDISON DRIVE. MIDDLETOWN, OHIO 45044 PH: 513 360

More information

Parameter Min Typ Max Units Frequency Range

Parameter Min Typ Max Units Frequency Range Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 3:8 TTL decoder Pb-free RoHs compliant 4x4 SMT package Description The CMD236C4 is a broadband

More information

SKY LF: GaAs SP2T Switch for Ultra Wideband (UWB) 3 8 GHz

SKY LF: GaAs SP2T Switch for Ultra Wideband (UWB) 3 8 GHz DATA SHEET SKY1398-36LF: GaAs SPT Switch for Ultra Wideband (UWB) 3 8 GHz Features Positive voltage control (/1.8 V to /3.3 V) High isolation 5 for BG1, 5 for BG3 Low loss.7 typical for BG1,.9 for BG3

More information

Surface-mounted MEMS Switch

Surface-mounted MEMS Switch Surface-mounted MEMS Switch Surface-mounted, ultracompact SPDT MEMS switch usable up to 10-GHz band (typical). Exceptional high-frequency characteristics in a broad spectrum up to 10 GHz (typical) At 8

More information

v02.06 Insertion Loss INSERTION LOSS () C +85 C -40 C Isolation ISOLATION () Return Loss RETURN LOSS ()

v02.06 Insertion Loss INSERTION LOSS () C +85 C -40 C Isolation ISOLATION () Return Loss RETURN LOSS () v02.06 Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military Radios, Radar & ECM Space Systems Test Instrumentation Features Isolation: 55 @ 2 GHz 42 @ 6 GHz Insertion

More information

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items. ADM-26-929SM The ADM-26-929SM is a broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 db typical

More information

dbm Supply Current (Idd) (Vdd=+36V)

dbm Supply Current (Idd) (Vdd=+36V) Ka Band 6W Power Amplifier 28GHz~42GHz High output power Aerospace and military application High Peak to average handle capability High Linearity and low noise figure All specifications can be modified

More information

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL: HILNA CX

USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL: HILNA CX USER MANUAL HIGH INTERCEPT LOW NOISE AMPLIFIER (HILNA TM ) MODEL: HILNA CX RF, Wireless, and Embedded Systems Engineering NUWAVES ENGINEERING 132 EDISON DRIVE. MIDDLETOWN, OHIO 45044 PH: 513-360-0800 FAX:

More information

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block

SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable

More information

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items. ADM-26-931SM The ADM-26-931SM is a broadband, power efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. The ADM-26-931SM is designed to provide optimal LO drive for T3 mixers.

More information

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier DATA SHEET SKY67107-306LF: 2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications LTE cellular infrastructure and ISM band systems Ultra low-noise, high gain and high linearity

More information

Features. = +25 C, Vdd = 5V

Features. = +25 C, Vdd = 5V v3.117 HMC1LH5 Typical Applications The HMC1LH5 is a medium PA for: Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation Functional Diagram Features Gain: 5 db Saturated

More information

Parameter Min. Typ. Max. Min. Typ. Max. Units

Parameter Min. Typ. Max. Min. Typ. Max. Units 25W Wide Band Power Amplifier 20-6000MHz Features Wideband Solid State Power Amplifier Psat: +45dBm Typical Gain: 50dB Typical Supply Voltage: +60V DC Electrical Specifications, T A =25 Parameter Min.

More information

Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications

Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Product description The BGB74L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon s silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure

More information

Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*

Features. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma* v.7 HMCLH AGC AMPLIFIER, - GHz Typical Applications The HMCLH is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C I Test Instrumentation Fiber Optics Functional Diagram Features

More information

Parameter Min. Typ. Max. Min. Typ. Max. Units

Parameter Min. Typ. Max. Min. Typ. Max. Units Electrical Specifications, TA = 25 C, With Vcc = 12V, 50 Ohm System Feature Gain: 36 db Noise Figure: 3.0dB P1dB Output Power: 10dB m full band Supply Voltage: 12V @185mA 50 Ohm Matched Input / Output

More information

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items. ADM-12-931SM The ADM-12-931SM is a small, low power, and economical T3 driver or T3A pre-amplifier. It is a GaAs PHEMT distributed amplifier in a 3mm QFN surface mount package. The ADM-12-931SM can provide

More information

MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1

MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1 MAPS-1146 4-Bit, 8. - 12. GHz Features 4 Bit 36 Coverage with LSB = 22.5 Integrated CMOS Driver Serial or Parallel Control Low DC Power Consumption Minimal Attenuation Variation over Phase Shift Range

More information

Ordering Information. Specifications. RF MEMS Switch 2SMES-01. Contact Ratings. Terminal Arrangement. Actuator Ratings

Ordering Information. Specifications. RF MEMS Switch 2SMES-01. Contact Ratings. Terminal Arrangement. Actuator Ratings RF MEMS Switch Miniature, 10 GHz Band (typical) SPDT (transfer contacts) RF MEMS Switch Superior high-frequency characteristics at 10 GHz typical/8 GHz rated (50 Ω) Isolation of 30 db Insertion loss of

More information

MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2

MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2 MAAM-11139 7. - 33. GHz Rev. V3 Features 3 Stage for 8/ GHz Bands 1 db Gain dbm Output Third Order Intercept (OIP3) dbm Output P1dB Variable Gain with Adjustable Bias Lead-Free mm Lead PQFN Package RoHS*

More information

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS Wide Band High Power Solid State Power Amplifier 2GHz~6GHz Electrical Specifications, TA = +25⁰C, Vcc = +28V Features Gain: 42 db min Output power +47dBm typical High P1dB: +45dB m Full Band Supply Voltage:

More information

11-15 GHz 0.5 Watt Power Amplifier

11-15 GHz 0.5 Watt Power Amplifier 11-15 GHz 0.5 Watt Power Amplifier Features Frequency Range : 11-15GHz 27.5 dbm output Psat 13 db Power gain 25% PAE High IP3 Input Return Loss > 11 db Output Return Loss > 6 db Dual bias operation No

More information

PE42512 Document Category: Product Specification

PE42512 Document Category: Product Specification PE2 Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.3 @ 6 GHz Fast switching time of 2 ns Power handling of m CW Logic select (LS)

More information

MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2

MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2 MAAL. - 1.6 GHz Rev. V2 Features Low Noise Figure Excellent Input Return Loss Single Voltage Bias 3 V Integrated Active Bias Circuit Current Adjustable 2-8 ma with an External Resistor High Linearity,

More information

SKY LF: 300 khz 3 GHz Medium Power GaAs SPDT Switch

SKY LF: 300 khz 3 GHz Medium Power GaAs SPDT Switch DATA SHEET SKY13268-344LF: 3 khz 3 GHz Medium Power GaAs SPDT Switch Applications Transceiver transmit-receive switching in GSM, CDMA, WCDMA, WLAN, Bluetooth, Zigbee, land mobile radio base stations or

More information

PE42562 Document Category: Product Specification

PE42562 Document Category: Product Specification Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz Fast switching time of 21 ns Power handling of 33 m CW Logic select (LS)

More information

AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator

AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator DATA SHEET AA104-73/-73LF: 300 khz-2.5 GHz One-Bit Digital Attenuator (32 ) Applications Sixth-bit value for Skyworks AA260-85 and AA101-80 digital attenuators IF and RF components for cable, GSM, PCS,

More information

PE4257. Product Specification. Product Description

PE4257. Product Specification. Product Description Product Description The PE is a high-isolation UltraCMOS Switch designed for wireless applications, covering a broad frequency range from near DC up to 000 MHz. This single-supply SPDT switch integrates

More information

5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units

5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units 7-3 RF-LAMBDA 5W Ultra Wide Band Power Amplifier 2-18GHz Features Wideband Solid State Power Amplifier Psat: + 37dBm Gain: 35 db Supply Voltage: +24V Electrical Specifications, T A = +25⁰C, Vcc = +24V

More information

PE Document Category: Product Specification

PE Document Category: Product Specification Document Category: Product Specification UltraCMOS, 1 MHz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz RF T RISE /T FALL time of 1 ns Power handling of 31 m CW Logic select (LS)

More information

100W Power Amplifier 8GHz~11GHz

100W Power Amplifier 8GHz~11GHz 100W Power Amplifier 8GHz~11GHz High output power +50dBm Aerospace and military application X band radar High Peak to average handle capability All specifications can be modified upon request Parameter

More information

RF OUT / N/C RF IN / V G

RF OUT / N/C RF IN / V G MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.

More information

TGM2543-SM 4-20 GHz Limiter/LNA

TGM2543-SM 4-20 GHz Limiter/LNA TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db

More information

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS Ultra Wide Band Low Noise Amplifier AC 1V/2V 0.0~ Electrical Specifications, T A =2 Parameters Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.01 1 1 3 GHz Gain 33 36 33 36 db Gain Flatness ±1. ±1.0

More information

SKY LF: GHz Five-Bit Digital Attenuator with Serial-to-Parallel Driver (0.5 db LSB)

SKY LF: GHz Five-Bit Digital Attenuator with Serial-to-Parallel Driver (0.5 db LSB) DATA SHEET SKY12345-362LF: 0.7-4.0 GHz Five-Bit Digital Attenuator with Serial-to-Parallel Driver (0.5 LSB) Applications Base stations Wireless and RF data Wireless local loop gain control circuits Features

More information

150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz. Parameter Min Typ Max Min Typ Max Units

150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz. Parameter Min Typ Max Min Typ Max Units 7-3 RF-LAMBDA 150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz Electrical Specifications, T A =25 Voltage = 110v/220v AC Features High Saturated Output Power 50~52dBm. Telecom Infrastructure

More information

5 6 GHz 10 Watt Power Amplifier

5 6 GHz 10 Watt Power Amplifier 5 6 GHz 10 Watt Power Amplifier Features Frequency Range : 5 6GHz 40 dbm Output Power 18 db Power gain 30% PAE High IP3 Input Return Loss > 12 db Output Return Loss > 7.5 db Dual bias operation No external

More information

1-24 GHz Distributed Driver Amplifier

1-24 GHz Distributed Driver Amplifier Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless

More information

Features. = +25 C, Vs= +8V to +16V

Features. = +25 C, Vs= +8V to +16V v2.17 Typical Applications The Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features Electrical Specifications,

More information

Product Datasheet P MHz RF Powerharvester Receiver

Product Datasheet P MHz RF Powerharvester Receiver GND GND GND NC NC NC Product Datasheet DESCRIPTION The Powercast P2110 Powerharvester receiver is an RF energy harvesting device that converts RF to DC. Housed in a compact SMD package, the P2110 receiver

More information

DC-20 GHz SP4T Non-reflective Switch

DC-20 GHz SP4T Non-reflective Switch Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 2:4 TTL decoder Small die size 2 3 RF1 RF2 A 4 Description The CMD23 is a broadband MMIC

More information

Features = +5V. = +25 C, Vdd 1. = Vdd 2

Features = +5V. = +25 C, Vdd 1. = Vdd 2 v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO

More information

1. Introduction. 2. DMS Technology. MM3100 Digital Micro Switch Application Note

1. Introduction. 2. DMS Technology. MM3100 Digital Micro Switch Application Note 1. Introduction MM3100 Digital Micro Switch Application Note In today s sophisticated defense, aerospace, industrial and telecom systems, high performance RF/microwave switching is required. This is becoming

More information

Specification Min. Typ. Max.

Specification Min. Typ. Max. High Power Reflective GaAs SP4T Switch FMS2016-005 HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2016-005 is a low loss, high power, linear single-pole four-throw

More information

MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C

MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated

More information

Features. Parameter Frequency Min. Typ. Max. Units DC GHz DC GHz DC GHz DC GHz DC GHz Isolation DC - 4.

Features. Parameter Frequency Min. Typ. Max. Units DC GHz DC GHz DC GHz DC GHz DC GHz Isolation DC - 4. Typical Applications The is ideal for: Cellular / 4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment Features Input P1: +40 @ Vdd = +8V High Third Order Intercept:

More information

MM Channel SPST Digital-Micro-Switch Application Note

MM Channel SPST Digital-Micro-Switch Application Note MM3100 6 Channel SPST Digital-Micro-Switch Application Note 1. Introduction In today s sophisticated defense, aerospace, industrial and telecom systems, high performance RF/microwave switching is required.

More information

PE42020 Product Specification

PE42020 Product Specification Product Specification, Hz 8 MHz Features High power handling 3 m @ DC 36 m @ 8 GHz Maximum voltage (DC or AC peak): ±1V on the RF ports Total harmonic distortion (THD): 84 c Configurable 5Ω absorptive

More information

Features. = +25 C, Vdc = +5V

Features. = +25 C, Vdc = +5V amplifiers Typical Applications The HMC-C is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram v.7 HMC-C Features Ultra Low Phase Noise: -6 dbc/hz @ khz Noise Figure:

More information

20W Solid State Power Amplifier 26.2GHz~34GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz.

20W Solid State Power Amplifier 26.2GHz~34GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz. 20W Solid State Power Amplifier 26.2GHz~34GHz Features Wideband Solid State Power Amplifier Gain: 65dB Typical Psat: +43dBm Typical Supply : +24V Electrical Specifications, T A = +25⁰C, Vcc = +24V Typical

More information

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS Absorptive Coaxial SP3T Switch 0.5-50GHz Electrical Specifications, T A = +25 C, Vdd = +5V/-5V, TTL = 0 / +5V Description PN: SP3T Absorptive Switch Low Power Cold Switching Parameter Min Typ Max Min Typ

More information

S-band T/R Control Module

S-band T/R Control Module S-band T/R Control Module Features Dual path, Transmit/Receive Operation 6-Bit Digital Attenuator, 6-Bit Digital Phase shifter and high Isolation SPDT Switch Low Insertion loss ~ 9.5dB Switch Isolation

More information

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.

More information

9W Power Amplifier 26.2GHz~34GHz

9W Power Amplifier 26.2GHz~34GHz 9W Power Amplifier 26.2GHz~34GHz High output power > +39.5 dbm Aerospace and military application High Peak to average handle capability High Linearity and low noise figure All specifications can be modified

More information

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*

Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma* v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use

More information