1. Introduction. 2. DMS Technology. MM3100 Digital Micro Switch Application Note

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1 1. Introduction MM3100 Digital Micro Switch Application Note In today s sophisticated defense, aerospace, industrial and telecom systems, high performance RF/microwave switching is required. This is becoming especially important for evolving radar and communication systems requiring higher power handling, as well as in future 5G systems, where very low loss and extreme linearity are critical to system performance. With the advent of multiple antennas, new wireless protocols, Internet of Things (IoT) and next-generation 5G telecommunications standards, new communication systems will need improved high performance switching and tuning functions, to support various Multiple Input and Multiple Output (MIMO) beamforming applications for base stations. As antenna technology transforms to accommodate more frequency bands, it has been shown that antenna transmission and reception performance is reduced. However, by utilizing active or adaptive tuning techniques to optimize the antenna frequency, pattern and gain, most of the decreased operating efficiency because of antenna detuning and environmental changes can be restored. Another important issue is the increased complexity of RF front-ends (RFFE). RFFEs need to support a never-ending increase in frequency bands, with higher and higher frequencies being added, all while exhibiting very low insertion loss and high linearity. This is critical for preserving the receiver noise figure, maximizing transmitter power, and maintaining high data rates. By applying Menlo Micro s innovative Digital-Micro-Switch (DMS) technology, it will enhance the performance and reliability of advanced frequency control products and RF/microwave systems and enable a new generation of highly flexible RF systems. 2. DMS Technology The MM3100 employs a novel micro-mechanical switch structure fabricated by Menlo Micro s proprietary metal-on-glass DMS process technology. The DMS technology has resolved fundamental reliability issues for micromechanical relays which in the past has limited the lifetime and power handling for these highperformance devices. Products like the MM3100 can now operate for billions of cycles under extreme environmental conditions while carrying very high power levels. The 6 channel MM3100 can be deployed in antennas, transmitters, receivers, analog and digital technologies utilized in terrestrial, airborne, seagoing and space-based platforms for advanced radar and communications systems, test & measurement, and other high power RF front-ends. The MM3100 is highly configurable at the board or application level, which allows it to be used in many different types of application circuits, some of which will be covered in this application note. In some instances, its six switches can be used to switch capacitance or inductance into or out of an RF circuit, with very low parasitics, creating six-bits of selectivity for very high Q tunable resonator circuits and highly flexible adaptive impedance matching designs. In other applications, the MM3100 can be configured as an SPnT switch or multiple SPnT switches, allowing a single device to replace multiple EM or solid-state relays. Pictured in Figure 1 below is the MM3100. This shows in the left photo the BGA packaged device, including the six channel die and its SPI gate controller, and in the right photo, an internal view of the wafer-levelcapped die showing the metal-on-glass construction. Each MM3100 channel is designed to handle up to 25W RF power (CW) at 3GHz. The DMS fabrication process allows for creation of high density switch products which can enable a variety of unique circuit topologies and high power switching configurations. 8/14/2018 MM3100 Application Note v1.1 Page 1

2 Figure 1 MM3100 in finished BGA package and also as wafer-level-capped die 3. Theory of Operation The MM3100 wideband 6 channel SPST switch works on the principle of electrostatic force to provide actuation of a cantilevered Beam to a Contact, which in turn provides a connection between the input and output of the Switch. Except for the Glass Substrate, all of the elements shown in Figure 1 are conductive materials and provide a low-resistance/low-impedance path between the RF Input and RF Output when the Beam is actuated. The Glass Substrate material used is a very pure form of glass, which provides an extremely high isolation and resistivity to the overlying conductive circuits, while maintaining exceptional linearity and low loss for RF and Microwave signals. The basic operation of the Switch is shown in Figure 2. As shown in the upper portion, the Gate is set for a 0V bias, so that the Beam position is in its non-deflected state. This means that the Beam-Bump does not make connection with the Contact, the path between RF Input and RF Output is isolated, and thus the Switch is in the OFF state. Through design techniques that take advantage of Menlo s proprietary metal alloys, the MM3100 exhibits a very low Coff, typically < 200fF when the Switch is in the OFF State, making it much more useful for critical RF applications where low parasitics and high isolation are required. In addition, the Switch is also capable of a high withstanding voltage of 150V when in the OFF State. As seen in the lower portion of Figure 2, the Gate is now set to the Switch Actuation Voltage of +75V, where the spring forces of the Beam are overcome by the Electrostatic Force which now exists between the Gate and Beam metals. This brings the Beam position to its fully deflected state, where the Beam-Bump now makes connection with the Contact. The path between RF Input and RF Output is now connected with an extremely low resistance/impedance characteristic, and thus the Switch is in the ON state. Through careful design coupled with proprietary metal alloys, the Switch exhibits a very low Ron typically < 0.5 Ohms when the Switch is in the ON State, allowing for Switch operation in high current and low loss RF applications where Insertion Loss is paramount. 8/14/2018 MM3100 Application Note v1.1 Page 2

3 A New Class of Reliability Figure 2 Switch OFF and ON states Metals are commonly used in Micro-Electro-Mechanical-Systems (MEMS) devices as conductors and surface traces, as well as etch masks and magnetic alloys for actuation and sensing. They have had significantly less exposure as the structural and moveable element in typical MEMS based devices due to stress limitations. While metals are excellent conductors, most pure metals are not capable of acting as good spring materials and fail to resist time and temperature dependent deformation, a property critical for repeatable micro device operation and performance. As shown in Figure 3, gold cantilever switches cycled at a 50% duty cycle and at 80 C showed a downward deflection (of the open state) in the beams as they were cycled. The open state deflection change was independent of whether the switches were cycled at 1 Hz or 1000 Hz, the data all collapsed into a line when plotted as a function of the integrated time the switches spent in the stressed closed position. Armed with this critical understanding of how MEMS switches fail, Menlo Micro began the work to address and solve both the critical beam and contact failure modes through materials innovations. Menlo has developed proprietary MEMS based fabrication and processing conditions around a proprietary electrodeposited alloy, to produce cantilever-based micro-actuators that have the combined mechanical properties near that of silicon, while exhibiting the conductivity of a metal. The electroplated alloy developed has a yield strength orders of magnitude greater than Gold. The resulting Switch Beam Reliability attained is shown in Figure 3. This shows that the Menlo Alloy performance to 20% deformation is > 10 years, compared to << 1 year for Gold. 8/14/2018 MM3100 Application Note v1.1 Page 3

4 MM-2 MM-0 Gold Figure 3 Switch Beam lifetime comparison for Menlo alloys (MM-0,MM-2) under accelerated test In addition to the above, to further guarantee the reliability of the Switch, Menlo has implemented extensive Lot Monitoring during the fabrication process, insuring that each and every Switch meets all reliability specifications. The Menlo MM3100 The MM3100 device combines all of the above innovations and technology into an SP6T device, which contains an integrated SPI driver that provides for a logic level SPI interface for programming, as well as high voltage drive for each of the 6 SPST Switch Gates. More details of the SPI interface are discussed in Section 6. An illustration of the MM3100 functional and cross-section diagrams are shown in Figure 4 below. Figure 4 MM3100 Functional and Cross-Section Diagrams 8/14/2018 MM3100 Application Note v1.1 Page 4

5 Performance A direct result of the materials and design methods that Menlo has pioneered is the exceptional performance of our Switches. In addition to benefits to Switch lifetime, careful design while maintaining 50 Ohm impedance insures very low Equivalent Circuit parasitics, as well as low ON State Insertion Loss, high OFF State Isolation, and high Return Loss, as shown in the following Figures (shown for single Switch): Switch OFF State: Switch ON State: Figure 5 MM3100 typical Switch Equivalent Circuit (single Switch), OFF and ON States 8/14/2018 MM3100 Application Note v1.1 Page 5

6 Figure 6 MM3100 typical ON State Insertion Loss over Frequency Figure 7 MM3100 typical OFF State Isolation over Frequency 8/14/2018 MM3100 Application Note v1.1 Page 6

7 Output Input Figure 8 MM3100 typical ON State Return Loss over Frequency Due to both the Switch Beam reliability and the materials used for the Beam-Bump, Gate, and Contact, Menlo DMS devices can typically withstand well over 3B operations under cold switch or even limited (+15dBm) hot switch conditions, as shown in Figure 9: Change in Insertion db Loss (db) at F = 900Mhz 0.1 MM3100 change in insertion loss over cycles while hot-switching Hot Switching Cycles (billions) Figure 9 MM3100 typical change in Insertion Loss over hot switching cycles 8/14/2018 MM3100 Application Note v1.1 Page 7

8 There are also attendant benefits to the Linearity performance of the MM3100 due to the high conductivity/metal-based signal path, versus the greater nonlinearity exhibited by active-channel semiconductor devices. A highly linear device is of course important in many circuit designs, particularly when a higher power signal is involved, such as for an HF/VHF/UHF military radio design for example. Having a highly linear switch in the Transmit path of this type of design may mean that a final Low Pass Filter is not required, as the harmonics generated are much lower in magnitude than would have been the case for a PIN diode, FET, GaAs, or RF SOI type of switch. The MM3100 exhibits a very high level of Linearity in support of these requirements, as shown in Figure 10: 0 MM3100 2nd and 3rd Harmonic Distortion vs Input Power (dbm) nd Harmonic 3rd Harmonic Figure 10 MM3100 typical 2 nd and 3 rd Harmonic Distortion vs Input Power (dbm) 8/14/2018 MM3100 Application Note v1.1 Page 8

9 Package Temperature (⁰C) MM3100 Digital Micro Switch Application Note Because of the extremely low loss of the Switch channel, coupled with the extremely high-temperature lifetime durability of the alloys used, the MM3100 can support switching of very high RF powers as shown in Figure 11: CW Input Power vs Package Temperature GHz 1.90 GHz 900 MHz 300 MHz 100 MHz 20 MHz Average Input Power (Watts) Figure 11 MM3100 typical CW Input Power versus Package Temperature at various Frequencies 8/14/2018 MM3100 Application Note v1.1 Page 9

10 4. MM3100 Applications Circuit Ideas The MM3100 is well suited for unique RF/microwave frequency switching and tuning applications due to its significantly lower parasitics and insertion loss, coupled with high power handling capability, as compared to PIN diode, FET, and RF SOI type switches. With the MM3100, many possible designs can be realized such as: * Tunable Filters * Filter Bank Select switches * Antenna Tuners * Programmable Amplitude and Phase/Delay circuits * Tunable/Switchable Oscillators And circuits such as the above can support many important end-use applications, such as: * RF Receiver Front End Filter for programmable out of band rejection of interferers * RF Transmitter Output Filter to reduce Harmonic and Spurious output signals * Programmable tuning of time-varying Antenna mismatch to improve radiated efficiency * Programmable Amplitude/Delay circuits for Antenna Beamforming/Phased Array * Switched Antenna Elements for Tunable Antennas/MIMO Tunable Filter A tunable 50Mhz and 100Mhz bandpass filter circuit schematic employing a single MM3100 device is shown in Figure 12 below. The bandpass filter is tuned by the Switch state on the series Capacitors and parallel Inductors; and the Switch states are opposite in the 2 cases (Fcenter at 50Mhz and 100Mhz). This example filter design provides a constant 20Mhz bandwidth, but can be designed to provide varying bandwidths and center frequencies as well. Fcenter = 50Mhz case: 8/14/2018 MM3100 Application Note v1.1 Page 10

11 Fcenter = 100Mhz case: Figure 12 Tunable Filter Circuit Switched Filter Banks The MM3100 can be configured for SPnT applications, which can operate well even when many Switches are connected in parallel, due to the very low parasitics and Coff when the unused Switches are open. The lowest parasitic is found on the Contact (RF Input side of the switch), so this is the best side of the Switch to make the multiple/parallel connections. The Switches can then be designed this way into a Switched Filter Bank, as shown in Figure 13: Figure 13 Switched Filter Bank 8/14/2018 MM3100 Application Note v1.1 Page 11

12 Antenna Tuning Techniques The MM3100 is very useful for antenna tuning applications. There are typically 2 tuning methods employed. One technique is adaptive impedance matching and the other is adaptive frequency control. The communication quality of multi-mode and multi-band radios are now suffering from the narrow bandwidth of miniaturized high Q antennas, where mismatch and frequency detuning occurs. This is due to environmental, fluctuating body effects and reduced form factors. By using adaptive impedance or frequency correction techniques it can provide automatic compensation of the antenna mismatch and frequency. This can be accomplished by utilizing the fundamental properties of tunable series and parallel LC resonate networks to automatically correct the antenna impedance and resonance frequency with programmable switched capacitor or inductor banks. High Power Transceiver Antenna Tuner Due to the MM3100 capability of handling up to 25 watts per channel, it can serve as a programmable highpower transceiver or base station antenna tuner as shown in Figure 14 below. Figure 14 High Power Transceiver Antenna Tuner 8/14/2018 MM3100 Application Note v1.1 Page 12

13 4 Bit Delay Line Phase Shifter MM3100 Digital Micro Switch Application Note A high power wideband 4-bit delay line or phase shifter using 2 MM3100 s can be realized by selecting binary lengths of micro coaxial cable as illustrated in the block diagram of Figure 15 below. Figure 15 High Power 4-Bit Micro Coaxial Delay Line Phase Shifter Programmable RF/Microwave Oscillator A useful programmable 3 frequency RF/microwave oscillator is shown Figure 16 below, where 6 switched capacitors are used to change frequencies. Conversely, the switched capacitors could also be replaced with 6 high Q inductors instead. Figure 16 MM3100 Programmable 3 Frequency RF/Microwave Oscillator 8/14/2018 MM3100 Application Note v1.1 Page 13

14 5. Designing Circuits with Menlo Switches The MM3100 requires a minimum of circuitry to support operation, and the interface to control the Switch is simple to use. Handling, ESD, and Maximum Ratings Handling of the MM3100 needs to carefully follow anti-static procedures, typical of any static sensitive semiconductor device. This includes NO ESD applied to any of the device pins in excess of 250V, using the JEDEC Human Body Model (HBM). Package Handling Due to the small size and tight assembly tolerance of the BGA package, proper handling and assembly is required to optimize reliability and performance. The BGA should only be handled in a clean and controlled Electrostatic Discharge (ESD) safe environment. Using non-conductive tweezers or vacuum pick-up tools are suitable for BGA handling. Avoid touching the BGA package with fingers as it can contaminate the package pads and interfere with solder reflow. Always keep the BGA in the original packaging until ready for usage. Also the BGA plastic package is susceptible to moisture-related cracking during assembly if the device is allowed to absorb an appreciable amount of moisture. Always maintain the BGA devices in a controlled environment of low humidity. 8/14/2018 MM3100 Application Note v1.1 Page 14

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16 Connecting Signals to the Switch RF Input and RF Output When connecting signals to the RF Input (Switch Contact) and RF Output (Switch Beam), care must be taken to ensure that unintended charge or DC voltage is not introduced on these pins of the device, so that possible damage to the Switch is reduced. If an unintended charge or DC voltage is present on either the RF Input (Switch Contact) or RF Output (Switch Beam) from one relative to the other, prior to change of state of the Switch (from OFF to ON or ON to OFF), the Switch may get damaged from the short discharge of current from one side of the Switch to the other. This in essence creates a hotswitching event, which can exceed the voltage or current ratings of the MM3100 Switch. To help in achieving the configuration as above, where possible it is recommended that the Beam (RF Output) side of the Switch should be connected to System Ground. This insures that the Beam side of the Switch has no unintended charge present, and of course since it is connected to Ground, it will not have any DC voltage present on it. An example of where this would be applicable would be for a shuntcapacitive switched section of a Tunable Filter, as shown in Figure 17: Figure 17 MM3100 Beam to Ground example for Tunable Filter 8/14/2018 MM3100 Application Note v1.1 Page 16

17 Where the Beam or Contact cannot be connected to System Ground as in the example above, it is recommended that the designer instead include a Bleed Resistor from the RF Input and/or RF Output to System Ground. This insures that if a small amount of leakage current or DC voltage were to get onto either the RF Input or RF Output, this charge or voltage will be dissipated by the Bleed Resistor, so that when the Switch is actuated, a hot-switch event will not occur. In summary, in order to ensure the specified lifetime of the Switch, it is important that it not be toggled OFF/ON or ON/OFF when there is any differential charge and/or voltage between the RF Input and RF Output pins. Example of how to apply Bleed Resistors to an RF Design: Connect Bleed Resistors on both the RF Input and RF Output to System Ground, with value from 10K Ohm to 200K Ohm. This will insure that any Leakage Bias source does not result in a stored charge and resulting DC voltage. This prevents a hotswitched/electrical Over Stress (EOS) event when the Switch is either closed or opened, as shown in Figure 18: Effective Capacitance, Bias Leakage, with no resulting Stored Charge Effective Capacitance with no stored charge RF Amplifier with Output Bias Leakage No DC Bias No Electrical Overstress when switch closes No DC Bias Bleed Resistor 10K to 200K Ohm Gate Control Bleed Resistor 10K to 200K Ohm Figure 18 MM3100 Bleed Resistor example for general RF Circuit 8/14/2018 MM3100 Application Note v1.1 Page 17

18 High-Voltage Bias Circuit A high voltage source is required for the MM3100 that can provide +75 VDC bias for proper switch control and operation. The LT3482 uses a 1.1 MHz frequency current mode step-up DC/DC converter with a voltage doubler. Since the LT3482 can be adjusted to provide up to 90 VDC output at about 2 milliamps of current, it works well as a low cost high voltage bias source for Menlo Switches. The supply current required at the 3.3V input supply is typically 4mA. The APD output current is converted to a filtered voltage through a fixed load resistor and bypass capacitor that is stable over the temperature range from -40 C to +125 C. The LT3482 operates from 2.5 to 16 VDC input and available in 16-lead 3mm x 3mm LGA package. This device can be easily integrated into the various MEMS switch designs. A recommended practical circuit is shown in Figure 19 below, and typical APD output ripple voltage is shown in Figure 20 below. Figure 19 High Voltage Bias Circuit Schematic Figure 20 Typical APD Voltage Ripple 8/14/2018 MM3100 Application Note v1.1 Page 18

19 Programming and control The MM3100 SPI Interface Gate Drive Control operation details are as follows: Figure 21 MM3100 Gate Driver block diagram (showing internal connection to Menlo Switches) 8/14/2018 MM3100 Application Note v1.1 Page 19

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21 Operating Description The SPI bus Gate Driver contains a 10-bit shift register and 10-bit latch. The Switch uses only registers 1-6 and latches 1-6; registers 7-10 and latches 7-10 are not internally connected to the Switch. The Gate Driver is controlled by the SPI Bus Clock, Data In, Latch Enable, and Blanking lines as follows (see Figure 23 for the timing diagram): A 6-bit Serial Word is loaded into the shift registers on the positive-going transitions of the clock. The first bit of the Serial Word (Data Bit 1), will load into register 6 (corresponding to Q6 / Switch Channel 6), and the last bit of the Serial Word (Data Bit 6) will load into register 1 (corresponding to Q1 / Switch Channel 1). Logic high on any Data Bit will turn the corresponding Switch ON, logic low will turn the corresponding Switch OFF. The mapping of the Serial Word Bits to Switch Channels is as follows: Data Bit 1 : Switch Channel 6 Data Bit 2 : Switch Channel 5 Data Bit 3 : Switch Channel 4 Data Bit 4 : Switch Channel 3 Data Bit 5 : Switch Channel 2 Data Bit 6 : Switch Channel 1 Parallel data is transferred to the output buffers through the latch when the Latch Enable goes logic high. If Latch Enable remains high, the latches operate in transparent mode. Data is latched when the Latch Enable goes logic low. When the Blanking is high; all Switch Channels are forced OFF. When Blanking is low, each Switch Channel mirrors the logic level of the Latch that drives it (Latch high = Switch ON, Latch low = Switch OFF). All inputs are compatible with 5V CMOS levels. Serial Data Out is available for daisy chaining-cascading devices (extra clocks are then needed to pass data through registers 7-10) Figure 22 MM3100 Gate Driver digital section Block Diagram 8/14/2018 MM3100 Application Note v1.1 Page 21

22 Figure 23 MM3100 SPI Bus Timing Diagram 8/14/2018 MM3100 Application Note v1.1 Page 22

23 6. Test and Evaluation Board Technical Description A test and evaluation board kit MM3100-EVK is available as shown in Figure 24 below. The MM3100 EVK can be used to verify the operation and performance of the MM3100 in multiple configurations, and is flexible enough to incorporate into R&D experimental designs. The RF/microwave layer is Rogers Corporation RO4350B laminate material, er = 3.48 ±0.05 on top of an FR-4 PC board. The metal layers are 1.5-ounce copper with gold plated top and bottom layers with end launch high frequency gold SMA female connectors. Figure 24 MM3100-EVK Test and Evaluation Board 8/14/2018 MM3100 Application Note v1.1 Page 23

24 Figure 25 MM3100 EVK Control Software GUI 8/14/2018 MM3100 Application Note v1.1 Page 24

25 7. Package and Assembly Recommended PCB Layout and SMT Parameters: PCB lands should be as shown in the pad pattern diagram. Open space around the package can have grounded thru holes. Use ENIG pad surface finish. Use 100 micron thick Soldermask. Use Type 3 or higher Solder Paste with no clean Flux. Component placement force should not exceed 100 grams. Recommended PCB Pad Pattern: Figure 26 Recommended PCB Pad Pattern 8/14/2018 MM3100 Application Note v1.1 Page 25

26 PCB Material Considerations Recommended Laminate Material The choice of PCB laminate material is an important consideration especially for thermal management of high power RF/microwave switches, like the MM3100, when used in small enclosures. System developers often take advantage of low dielectric constant laminate materials with ceramic fillers in the PCB stack up to reduce insertion loss and reduce the overall temperature rise. This has provided good thermal results over the years, allowing high powered products to perform to ever-increasing technological specifications. For many years, FR-4 PCB material has been used in RF/microwave designs and is still used for high volume products due to the lower cost verses the expensive exotic materials. Many FR-4 materials are not specified for RF/microwave performance due to the dielectric constant or Er that varies from manufacturer to manufacturer and lot to lot. Menlo Micro recommends using Rogers Corporation products; they are one industry leader offering a great selection RF/microwave PCB laminates. One excellent laminate for application of the MM3100 is the Roger s RT/duroid RO4003 that offers good RF/microwave performance and thermal conductivity. 8/14/2018 MM3100 Application Note v1.1 Page 26

27 Thermal Considerations Good thermal design historically has been determining what devices and components in a given system generate the most heat, and then mounting them to large heat sinks. Today with many products being reduced in size such as mobile communication devices, the use of heat sinks is not an option. To solve this problem, the Printed Circuit Board (PCB) must be designed to also serve as a heat sink. This means heat is transferred through the PCB in the form of conduction, convection and radiation. The MM3100 plastic BGA package does not have the micro switch die internally attached to a thermal pad. Therefore, heat must be conducted primarily through the PCB circuit traces or microstrip transmission lines by conduction. To optimize both the RF performance as well as Thermal dissipation characteristics, ensure that the MM3100 is both thermally and electrically coupled to the PCB assembly. Not only does the heat generated need to conduct through the PCB, but it also must effectively transfer into the surrounding area and away from the BGA package. The process of Heat Transfer and resulting Device Temperature depends on the following factors: Thermal energy being generated at the MM3100 BGA Device. Thermal resistance from the MM3100 BGA to thermal dissipative elements. Thermal Transfer characteristics of PCB dissipative elements. Most of the heat generated by the MM3100 BGA package is transferred to the PCB from the leads and package body, and then radiated to the air as illustrated in Figure 28 below. It is a characteristic of BGA surface mount packages tested in a standard environment that typically 70% of the heat generated flows to the air through the PC board. Figure 28 BGA and PCB Heat Transfer 8/14/2018 MM3100 Application Note v1.1 Page 27

28 BGA Soldering and Handling Considerations Recommended Reflow Soldering Temperature Profile Forced convection reflow with Nitrogen. Temperature uniformity is ± 5 C. Solder reflow profile: MM3100 Digital Micro Switch Application Note 1) Follow datasheet of solder paste manufacturer. 2) Additional concerns to consider are other components, PC board density, size and thickness. 3) For the PPF lead frame, the palladium will be dissolved into the solder and the joint is formed with the underlying nickel layer. Higher reflow temperature is required to form a good solder joint or metal to metal bond. Figure 29 Recommended Soldering Temperature Profile vs Time Graph Solder Reflow 1) Heat-up at 1~3 C per second to 140 C. 2) Preheat at 140 C to150 C for 120 to ~160 seconds. 3) Ramp at 2 C to ~3 C per second to peak temperature (220 C to ~225 C for 63Sn/37Pb or 62Sn/36Pb/2Ag) (250 C to 260 C for Sn/Ag/Cu). 4) Temperature over 183 C (for 63Sn/37Pb or 62Sn/36Pb/2Ag for 45 to ~75 second) or over 217 C for Sn/Ag/Cu solder. 5) Cool down to 25 C or room temperature at 4 C to ~2 C per second to avoid forming any undesired intermetallic layer. 8/14/2018 MM3100 Application Note v1.1 Page 28

29 Handling, ESD, and Maximum Ratings Handling of the MM3100 needs to carefully follow anti-static procedures, typical of any static sensitive semiconductor device. This includes NO ESD applied to any of the device pins in excess of 200V, using the JEDEC Human Body Model (HBM). Package Handling Due to the small size and tight assembly tolerance of the BGA package, proper handling and assembly is required to optimize reliability and performance. The BGA should only be handled in a clean and controlled Electrostatic Discharge (ESD) safe environment. Using non-conductive tweezers or vacuum pick-up tools are suitable for BGA handling. Avoid touching the BGA package with fingers as it can contaminate the package pads and interfere with solder reflow. Always keep the BGA in the original packaging until ready for usage. Also the BGA plastic package is susceptible to moisture-related cracking during assembly if the device is allowed to absorb an appreciable amount of moisture. Always maintain the BGA devices in a controlled environment of low humidity. All other applicable MM3100 Minimum and Maximum Ratings are shown below. Please see the datasheet for a full list of Maximum Ratings and Recommended Operating Conditions. Table 1 Maximum Ratings (1) Parameter Minimum Maximum Unit Logic Supply Voltage (VDD) 7.5 VDC High Voltage Bias Supply (VBB) 72.5 VDC Serial Input Voltage, Low / High -0.3 VDD V Total CW Input Power / Switch 25 W DC Voltage Rating / Switch, (Input to Output) +/-150 V DC Current Rating / Switch 1000 ma Operating Temperature Range C ESD Voltage All Pins (2) 200 V Storage Temperature Range ºC Notes: 1) All parameters must be within recommended operating conditions. Maximum DC and RF power can only be applied during the on-state condition (cold-switched condition). 2) Per JEDEC HBM standards 8/14/2018 MM3100 Application Note v1.1 Page 29

30 Important Information Disclaimer The data presented in this document is for informational purposes for engineering samples, which have not yet been qualified for production. It shall in no event be regarded as a guarantee of final specifications or characteristics. Any warranty or license for this product shall be specified and governed by the terms of a separate purchase agreement. Menlo Micro does not assume any liability arising out of the application or use of this product; neither does it convey any license under its patent rights, nor the rights of others. Menlo Micro reserves the right to make changes in these specifications and features shown herein to improve reliability, function and design, or discontinue of this product, at any time without notice or obligation. Contact our product representative for the most current information. Warning This product is not authorized for use: 1) In any life support systems. 2) Applications for implanting into the human body, without the express written approval from Menlo Micro. Trademark Notices All trademarks and product service marks is owned by Menlo Microsystems, Inc. Contact Information Please contact Menlo Micro for the latest specifications, additional product information, test and evaluation boards, product samples, worldwide sales and distribution locations: Internet: sales@menlomicro.com For product technical questions and application information: support@menlomicro.com 8/14/2018 MM3100 Application Note v1.1 Page 30