Raffael Schnell, Product Manager, ABB Switzerland Ltd, Semiconductors LinPak a new low inductive phase-leg IGBT module ABB

Transcription

1 Raffael Schnell, Product Manager, ABB Switzerland Ltd, Semiconductors LinPak a new low inductive phase-leg IGBT module Slide 1

2 The LinPak Main features Low inductive target inductance 1 nh, ready for fast chip-sets and future SiC solutions Flexible one module for different current ratings, easy paralleling with one driver Highest current density compact inverter design Integrated thermistor real time temperature control Multiple source Open standard no license fee for the outline Slide 2

3 Inductance comparison in an inverter LinPak vs. HiPak Module inductance 2 HiPak (1.7 kv / 36A) 4 LinPak (1.7 kv / 4A) 16nH (2 x 8nH) Bus-bar inductance 1nH 1.5nH Capacitor inductance 1.5nH 1.5nH 2.5nH (1nH for a single module) Total (module including DC-link) 27.5nH 5.5nH (22nH for a single module) L σ I C (36A) 99 µvs 19.8µVs t f =.12µs (17V SPT++) 825V 1% 165V 2% Slide 3

4 Flexible Easy paralleling 2x4A, 4 x 14mm 2 2x3A 3 x 14mm 2 2x2A 2 x 14mm 2 2x1A 1 x 14mm 2 One directional internal current flow from dc to phase Paralleling with minimal de-rating Slide 4

5 Low self heating of the contact leads More connection area 17 V Phase current, rms (example) 36 A / 2 1 A / 2 Current per connection 6A AC: 35 A DC+ / DC-: 25 A Connection resistance (one contact M8) 25 µω 25 µω Boundary condition: no heat exchange with bus-bar Slide 5

6 LinPak technology for reliability Integrated thermistor NTC thermistor to monitor temperature close to the chips Detection of over-temperature allows to trigger corrective actions like temporary power reduction or save stop Higher reliability and longer life-time if too high temperature is avoided Slide 6

7 LinPak nominal turn-off switching Compared to HiPak 9V, 9A, 125 C, L s = 25nH SPT++ V CEmax V DC = 19V E off /I CE =.36mJ/A 2% less Eoff than HiPak VCE (V) / ICE (A) VGE (V) V, 36A, 125 C, L s = 5nH SPT+ V CEmax V DC = 55V E off /I CE =.44mJ/A 3 x higher overvoltage ICE (A) VGE (V) VCE (V) -1.9E-5-1.8E-5-1.7E-5-1.6E-5-1.5E-5 t (s) Slide t (µs)

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9 Application and design Smooth switching waveforms Slide 9

10 LinPak switching waveforms 125 C Turn-off SOA (13V, 18A) VGE (V) Diode SOA (13V, 9A) VR (V) / ID (A) VCE (V) / ICE (A) E-5-1.8E-5-1.7E-5-1.6E-5-1.5E-5 t (s) E-6.E+ 1.E-6 t (s) 2.E-6 3.E-6 4.E-6 Slide 1

11 LinPak nominal diode recovery Compared to HiPak 9V, 9A, 125 C, L s = 25nH SPT++ E rec /I D =.17mJ/A very low dv/dt 43% less E rec, significantly reduce dv/dt 9V, 36A, 125 C, L s = 5nH SPT+ E rec /I D =.3mJ/A high dv/dt VR (V) / ID (A) 2-2 VR (V) / ID (A) VR (V) E-6.E+ 1.E-6 2.E-6 3.E-6 t (s) t (µs) Slide 11

12 LinPak nominal switching 25 nh total circuit inductance Turn-on switching (9V, 9A, 125 C) VCE (V) / ICE (A) VGE (V) E+ 2.E-6 4.E-6 6.E-6 8.E-6 1.E-5 t (s) Picture of test setup for dynamic tests Slide 12

13 Technologies for reliability Slide 13

14 LinPak technology for reliability Particle free ultra sonic welding of main terminals Today s USW processes for terminal attach create hot copper particles (left) that for example melt into the polyimide chip passivation. This is a severe reliability risk and such particles cant be removed with a simple air/nitrogen blast process. ABB has a unique process to reduce particle generation and avoid particle spread over the critical module areas (right) Slide 14

15 LinPak technology For reliability Particle free ultra sonic welded main terminals for higher lifetime and current density Bonded auxiliary contacts from substrate to PCB Optimized bonding parameters (deformation control) and bond pattern for highest bond-reliability (>2Mcycles for DT = 8K, T vjm = 15 C) Further improved substrate solder with spacer bonds to ensure a homogenous solder layer for a higher temperature cycling performance Slide 15

16 Conclusions & Outlook Slide 16

17 LinPak Conclusion The new LinPak enables an ultra compact converter design with significant lower stray inductance which is confirmed by first measurements with prototype modules. By this the benefits of state of the art fast Silicon, but as well future SiC chip-sets can be fully utilized. New assembly processes are employed to increase the product quality and reliability. Methods to reduce particles, especially for ultra sonic welding of main terminals are key. An integrated thermistor allows to better control over-temperatures that is beneficial for reliability The LinPak is the new standard for demanding applications such as traction and renewables, but as well for high performance industrial applications. It is as well the first full SiC ready power module. Slide 17

18 Outlook The future is LinPak LinPak Voltage (V) Current (A) AlSiC (LV) 17 2 x 1 AlSiC (LV) 33 2 x 525 enhanced Trench 2 x 45 SPT+ AlSiC HV 45 2 x 35 AlSiC HV 65 2 x 25 Cu (industrial) 12 2 x 12 SiC samples (LV) 17 / 33 First product to be released is rated 17V 33V can be mounted into the low voltage and high-voltage version, with the LV version offering advantages in the inductance and connection resistance The HV version is scheduled to follow shortly after the LV version launch Slide 18