ABB HiPak. Parameter Symbol Conditions min max Unit Repetitive peak reverse voltage
|
|
- Avis Brittany Walton
- 5 years ago
- Views:
Transcription
1 V RRM = 65 V I F = 2x 6 A ABB HiPak DIODE Module 5SLD 6J651 Doc. No. 5SYA Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Improved high reliability package Recognized under UL1557, File E Maximum rated values 1) Parameter Symbol Conditions min max Unit Repetitive peak reverse voltage VRRM 65 V DC forward current IF 6 A Peak forward current IFRM tp = 1ms 12 A Total power dissipation Ptot Tc = 25 C, per diode 476 W Surge current IFSM VR = V, Tvj = 125 C, tp = 1 ms, half-sinewave 6 A Isolation voltage Visol 1 min, f = 5 Hz 12 V Junction temperature Tvj 125 C Junction operating temperature Tvj(op) C Case temperature Tc C Storage temperature Tstg C 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 6747
2 5SLD 6J651 Diode characteristic values 2) Forward voltage 3) VF IF = 6 A Continuous reverse current IR VR = 65 V Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy Irr Qrr trr Erec VR = 36 V, IF = 6 A, VGE = 15 V, di/dt = 25 A/µs L = 28 nh inductive load, switch: Tvj = 25 C Tvj = 125 C Tvj = 25 C 6 Tvj = 125 C Tvj = 25 C 79 Tvj = 125 C 99 Tvj = 25 C 7 Tvj = 125 C 12 Tvj = 25 C 17 Tvj = 125 C 22 Tvj = 25 C 11 Tvj = 125 C 22 Module stray inductance L AC per diode 36 nh Resistance, terminal-chip RAA +CC per diode 2) Characteristic values according to IEC ) Forward voltage is given at chip level TC = 25 C.2 TC = 125 C.3 V ma A µc ns mj mω Thermal properties 4) Diode thermal resistance junction to case Rth(j-c)DIODE.21 K/W Diode thermal resistance 5) case to heatsink Rth(c-s)DIODE diode per switch, grease = 1W/m x K.18 K/W Mechanical properties 4) Dimensions L x W x H Typical, see outline drawing 13 x 14 x 48 mm Clearance distance in air Surface creepage distance da ds according to IEC and EN according to IEC and EN Term. to base: 4 Term. to term: 26 Term. to base: 64 Term. to term: 56 Comparative tracking index CTI 6 Mounting torques 5) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 1 Mass m 98 g 4) Thermal and mechanical properties according to IEC ) For detailed mounting instructions refer to ABB document no. 5SYA mm mm Nm Doc. No. 5SYA page 2 of 5
3 5SLD 6J651 Electrical configuration C (7) C (5) A (6) A (4) Outline drawing 5) Note: all dimensions are shown in mm 5) For detailed mounting instructions refer to ABB document no. 5SYA This is an electrostatic sensitive device, please observe the international standard IEC , chap. VIII. This product has been designed and qualified for industrial level. Doc. No. 5SYA page 3 of 5
4 5SLD 6J V CC = 36 V di/dt = 25 A/µs L = 28 nh E rec 25 2 Q rr 12 Erec [mj], Qrr [µc], Irr [A] 2 15 Q rr I rr Erec [mj] 15 E rec I rr Qrr [µc], Irr [A] 5 E rec [mj] = -1.2 x 1-3 x I 2 F x I F V CC = 36 V I F = 6 A L = 28 nh I F [A] di/dt [ka/µs] Fig. 1 Typical reverse recovery characteristics vs forward current Fig. 2 Typical reverse recovery characteristics vs di/dt V CC 44 V di/dt 4 A/µs L 28 nh 8 25 C 125 C 8 IF [A] 6 IR [A] V F [V] V R [V] Fig. 3 Typical diode forward characteristics, chip level Fig. 4 Safe operating area diode (SOA) Doc. No. 5SYA page 4 of 5
5 5SLD 6J651 Zth(j-c) [K/W] DIODE Z th(j-c) Diode DIODE Analytical function for transient thermal impedance: Z th (j-c) (t) = n i 1 R i (1- e -t/ i i Ri(K/kW) i(ms) ) t [s] Fig. 5 Thermal impedance vs time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 257 IGBT diode safe operating area (SOA) 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design of IGBT modules 5SYA 298 Paralleling of IGBT modules 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 912 Specification of environmental class for HiPak We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. ABB Switzerland Ltd Doc. No. 5SYA Semiconductors Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Telephone +41 () Fax +41 () abbsem@ch.abb.com Internet
ABB HiPak. Parameter Symbol Conditions min max Unit Repetitive peak reverse voltage
V RRM = 4 V I F = 2x 65 A ABB HiPak DIODE Module Doc. No. 5SYA 1599-5 9-216 Ultra low-loss, rugged SPT + diode Smooth switching SPT + diode for good EMC Industry standard package High power density AlSiC
More informationABB HiPak. IGBT Module 5SNA 2400E VCE = 1700 V IC = 2400 A
VCE = 7 V IC = 24 A ABB HiPak IGBT Module 5SNA 24E7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power cycling
More informationABB HiPak. IGBT Module 5SNA 1200G VCE = 4500 V IC = 1200 A
VCE = 45 V IC = 2 A ABB HiPak IGBT Module 5SNA 2G453 Doc. No. 5SYA 4-5 3-26 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity
More informationABB HiPak TM. IGBT Module 5SNG 0150P VCE = 4500 V IC = 150 A
VCE = 45 V IC = 5 A ABB HiPak TM IGBT Module 5SNG 5P453 Doc. No. 5SYA 593-4 7-23 Ultra low loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC High iulation package AlSiC base-plate
More information5SND 0500N HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 433-2-23 5SND 5N333 HiPak IGBT Module V CE = 33 V I C = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 5 Hz, tp = 10 ms, Tvj = C, Note 1. Note 1
VRSM = 6000 V Rectifier Diode IF(AV)M = 4210 A IF(RMS) = 6610 A IFSM = 71.2 10 3 A VF0 = 0.80 V rf = 0.134 m 5SDD 50N6000 Doc. No. 5SYA1188-01 Jun. 17 Patented free-floating silicon technology Low on-state
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 06D2800 Unit. f = 50 Hz, tp = 10 ms, Tvj = C, Note 1 V DRM, V RRM.
VDRM = 2800 V Phase Control hyristor I(AV)M = 620 A I(RMS) = 970 A ISM = 8.8 10 3 A V0 = 0.92 V r = 0.78 m 5SP 06D2800 Doc. No. 5SYA1020-05 Mar. 14 Patented free-floating silicon technology Low on-state
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 28M4200 Unit. f = 50 Hz, tp = 10 ms, Tvj = C, Note 1 V DRM, V RRM.
VDRM = 4200 V Phase Control hyristor I(AV)M = 2710 A I(RMS) = 4260 A ISM = 54.0 10 3 A V0 = 0.97 V r = 0.158 m 5SP 28M4200 Doc. No. 5SYA1080-01 Jun. 16 Patented free-floating silicon technology Low on-state
More informationQRD Preliminary. High Voltage Diode Module 200 Amperes/3300 Volts
QRD3324 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com High Voltage Diode Module 2 Amperes/33 Volts L NUTS (3TYP) F A D F C J 7 8 B E H 1 2 3 4
More informationABB 5STP33L2800 Control Thyristor datasheet
ABB 5SP33L2800 Control hyristor datasheet http://www.manuallib.com/abb/5stp33l2800-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationReverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020
VDRM = 5500 V ITGQM = 1800 A ITSM = 18 10 3 A VT0 = 1.9 V rt = 0.9 m VDC = 3300 V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-01 Apr. 16 High snubberless turn-off
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 26N6500 Unit Max. surge peak forward and reverse blocking voltage
VDRM = 6500 V Phase Control hyristor I(AV)M = 2810 A I(RMS) = 4410 A ISM = 65 10 3 A V0 = 1.12 V r = 0.29 m 5SP 26N6500 Doc. No. 5SYA1001-07 Mar. 14 Patented free-floating silicon technology Low on-state
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 42U6500 Unit Max. surge peak forward and reverse blocking voltage
VDRM = 6500 V Phase Control hyristor I(AV)M = 4250 A I(RMS) = 6680 A ISM = 86 10 3 A V0 = 1.24 V r = 0.162 m 5SP 42U6500 Doc. No. 5SYA1043-07 Mar. 14 Patented free-floating silicon technology Low on-state
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 45Y8500 Unit Max. surge peak forward and reverse blocking voltage
VDRM = 8500 V Phase Control hyristor I(AV)M = 4240 A I(RMS) = 6660 A ISM = 90 10 3 A V0 = 1.10 V r = 0.16 m 5SP 45Y8500 Patented free-floating silicon technology Low on-state and switching losses Designed
More informationSG200-12CS2 200A1200V IGBT Module
Typical applications: AC and DC electric motor control Frequency transformer UPS Industry power supply Electric welding machine Characteristics: SPT chip (soft-punch-through) MOS input control Ultra thin
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 07D1800 Unit Max repetitive peak forward and reverse blocking voltage
V DRM = 1800 V I (AV)M = 730 A I (RMS) = 1150 A I SM = 9 10 3 A V 0 = 0.8 V r = 0.54 mw Phase Control hyristor 5SP 07D1800 Doc. No. 5SYA1027-06 May 07 Patented free-floating silicon technology Low on-state
More informationABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MDM1200FH33F Repetitive Peak Reverse Voltage VRRM V 3,300 Forward Current
DIODE MODULE Spec.No.SR2-SP-16004 R1 P1 FEATURES Low Reverse Recovery Loss diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High
More informationMIDA-HB12FA-600N IGBT module datasheet
Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC
More informationThe electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
V RM = 6500 V I (AV)M = 1405 A I (RMS) = 2205 A I SM = 22 10 3 A V 0 = 1.2 V r = 0.6 m Bi-Directional Control hyristor 5SB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 wo thyristors integrated into one wafer Patented
More informationThe electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
V DM = 5200 V I (AV)M = 1800 A I (RMS) = 2830 A I SM = 29 10 3 A V 0 = 1.02 V r = 0.32 mw Bi-Directional Control hyristor 5SB 17N5200 Doc. No. 5SYA1036-04 May 07 wo thyristors integrated into one wafer
More informationDIM1000ACM33-TS001. IGBT Chopper Module DIM1000ACM33-TS001 FEATURES KEY PARAMETERS V CES
IGBT Chopper Module DS6246-1 July 2018 (LN35934) FEATURES 10.2kV Isolation 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base with AlN
More informationABB 5STP16F2800 Control Thyristor datasheet
ABB 5SP16F2800 Control hyristor datasheet http://www.manuallib.com/abb/5stp16f2800-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationThe electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
V DM = 2800 V I (AV)M = 2630 A I (RMS) = 4130 A I SM = 43 10 3 A V 0 = 0.85 V r = 0.16 mw Bi-Directional Control hyristor 5SB 24Q2800 Doc. No. 5SYA1053-02 May 07 wo thyristors integrated into one wafer
More informationIndustry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low
More informationIndustry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 34mm IGBT module MIFA-HB12FA-N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of C o square RBSOA of 2xIC o low EMI FRD chip
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 17H5200 Unit Max. surge peak forward and reverse blocking voltage
V DRM = 5200 V Phase Control hyristor I (AV)M = 1975 A I (RMS) = 3100 A I SM = 34 10 3 A V 0 = 1.02 V r = 0.32 mw 5SP 17H5200 Doc. No. 5SYA1049-06 Nov. 13 Patented free-floating silicon technology Low
More informationIndustry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 34mm IGBT module MIFA-HB12FA-1N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low EMI FRD
More informationMD#630-30N2 & MD#630-36N2
Date: 12 th October 2015 Data Sheet Issue: 1 Dual Diode Modules MD#630-30N2 & MD#630-36N2 Absolute Maximum Ratings VRRM [V] MDD MDA MDK 1200 630-30N2 630-30N2 630-30N2 1800 630-36N2 630-36N2 630-36N2 VOLTAGE
More informationDFM600FXM18-A000. Fast Recovery Diode Module DFM600FXM18-A000 FEATURES KEY PARAMETERS V RRM. 1800V V F (typ) 2.0V I F (max) 600A I FM (max) 1200A
Fast Recovery Diode Module Replaces DS5438-1.4 DS5438-2 April 2010 (LN26762) FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates Dual
More informationDFM1200FXM12-A000. Fast Recovery Diode Module. 1200V V F (typ) 1.9V I F (max) 1200A I FM (max) 2400A V RRM FEATURES APPLICATIONS ORDERING INFORMATION
Fast Recovery Diode Module DS5480-1.3 November 2007 (LN25323) FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop Isolated Copper Base plate AlSiC Baseplate With AIN Substrates
More informationAmbient cosmic radiation at sea level in open air. Gate Unit energized
V DRM = 4500 V Asymmetric Integrated Gate- I GQM = 4000 A I SM = 32 10 3 A V (0) = 1.4 V r = 0.325 mw V DC = 2800 V Commutated hyristor 5SHY 35L4520 High snubberless turn-off rating Optimized for medium
More informationABB 5STP20N8500 Control Thyristor datasheet
ABB 5SP20N8500 Control hyristor datasheet http://www.manuallib.com/abb/5stp20n8500-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationSingle Switch IGBT Module
DIM24ESM17-E1 Single Switch IGBT Module DS582-1. November 24 (LN23687) FEATURES High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES 17V
More informationV (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
More informationCM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >
CM8HCB-34N CM24HCB-34N I C 8 A V CES 7 V -element in pack Insulated type CSTBT TM / Soft recovery diode AlSiC baseplate APPLICATION Traction drives,
More informationDIM600XSM45-F000. Single Switch IGBT Module FEATURES KEY PARAMETERS V CES. 4500V V CE(sat) * (typ) 2.9 V I C
Single Switch IGBT Module DS5874-1.1 August 26 (LN24724) FEATURES 1µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling
More informationAsymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4511
V DRM = 4500 V I GQM = 3800 A I SM = 28 10 3 A V (0) = 1.7 V r = 0.457 mw V DC-link = 2800 V Asymmetric Integrated Gate- Commutated hyristor Doc. No. 5SYA1234-02 June 07 High snubberless turn-off rating
More informationCP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
More informationV CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875
APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4
More informationReverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020
V DRM = 5500 V I GQM = 1800 A I SM = 18 10 3 A V (0) = 1.9 V r = 0.9 m V DC = 3300 V Reverse Conducting Integrated Gate-Commutated hyristor High snubberless turn-off rating Optimized for medium frequency
More informationSingle Switch IGBT Module
DIM6ASM65-K Single Switch IGBT Module DS5825-1. January 25 (LN23752) FEATURES High Thermal Cycling Capability Soft Punch Through Silicon Isolated MMC Base with AlN Substrates APPLICATIONS High Reliability
More informationCommutated Thyristor 5SHY 55L4500
V DRM = 4500 V Asymmetric Integrated Gate- I GQM = 5000 A I SM = 33 10 3 A V (0) = 1.22 V r = 0.28 mw V DC = 2800 V Commutated hyristor 5SHY 55L4500 High snubberless turn-off rating Optimized for medium
More informationQID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
More informationAsymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4521
V DRM = 4500 V I GQM = 4000 A I SM = 32 10 3 A V (0) = 1.4 V r = 0.325 m V DC = 2800 V Asymmetric Integrated Gate- Commutated hyristor High snubberless turn-off rating Optimized for medium frequency High
More informationCP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts
CP1TD1-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697-18 (724) 92-7272 1 Amperes/12 Volts Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2
More informationCM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack
CMDY-A CMDY-A IC...A CES... Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9 8 CE E C E G GE 8 () -φ6. MOUNTING
More informationSTTH120L06TV. Turbo 2 ultrafast high voltage rectifier
Turbo 2 ultrafast high voltage rectifier Datasheet - production data Features A1 A2 A1 K1 Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated
More informationIGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
More information"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
INT-A-PAK "Half-Bridge" IGBT INT-A-PAK FEATURES Vishay High Power Products Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 khz to 4 khz in hard switching, > 2 khz in resonant mode Very
More informationIGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications
STARPOWER SEMICONDUCTOR TM IGBT GD75HFU120C1S Molding Type Module 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit
More informationEMP30P06D PIM+ Power module frame pins mapping. EMP Features:
Bulletin I27182 08/06 EMP30P06D PIM+ EMP Features: Power Module: NPT IGBTs 30A, 600V 10us Short Circuit capability Square RBSOA Low Vce (on) (2.05Vtyp @ 30A, 25 C) Positive Vce (on) temperature coefficient
More informationSTTH6003TV/CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 2 x 30 A 300 V FEATURES AND BENEFITS
STTH63TV/CW MAJOR PRODUCT CHARACTERISTICS HIGH FREQUENCY SECONDARY RECTIFIER IF(AV) VRRM VF (max) trr (max) 2 x 3 A 3 V 1 V 55 ns K1 K1 K2 K FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND VOLTAGE
More informationMounting Instructions for HiPak Modules
Technical information Doc. No. 5SYA 2039-04 Jan. 10 Mounting Instructions for HiPak Modules Raffael Schnell, Samuel Hartmann ABB Switzerland Ltd, Semiconductors 1. Handling IGBTs are sensitive to electrostatic
More informationFull Bridge IGBT MTP (Warp Speed IGBT), 50 A
Full Bridge IGBT MTP (Warp Speed IGBT), 50 A MTP PRIMARY CHARACTERISTICS V CES 600 V DC 69 A V CE(on) 2.22 V Speed 8 khz to 30 khz Package MTP Circuit configuration Full bridge FEATURES Gen 4 warp speed
More informationVery Low Stray Inductance Phase Leg SiC MOSFET Power Module
MSCMC120AM03CT6LIAG Datasheet Very Low Stray Inductance Phase Leg SiC MOSFET Power Module Final May 2018 Contents 1 Revision History... 1 1.1 Revision A... 1 2 Product Overview... 2 2.1 Features... 2 2.2
More informationDIM1800ESS12-A000. Single Switch IGBT Module DIM1800ESS12-A000 FEATURES KEY PARAMETERS V CES
Single Switch IGBT Module Replaces DS5857-2 DS5857-3 August 2014 (LN31868) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Cu Base with Al 2 O 3 Substrates Lead Free cotruction
More informationMolding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 2-in-1 Package, 12 V and 3 A VS-GB3TH12N Double INT-A-PAK FEATURES 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 15
More informationSD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8.
SD33N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series.5 µs recovery time High voltage ratings up to 5V High current capability Optimized turn on and turn off characteristics
More informationSKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast
More informationIGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module
STARPOWER SEMICONDUCTOR TM IGBT GD400SGK120C2S Molding Type Module 1200V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as
More informationSTTH15RQ06-Y. Automotive turbo 2 ultrafast high voltage rectifier
Automotive turbo 2 ultrafast high voltage rectifier Datasheet - production data K K D²PAK K A A NC Description The STTH15RQ06-Y has been developed to be used in application requiring a high-voltage secondary
More informationSTTH6003. High frequency secondary rectifier
High frequency secondary rectifier Datasheet - production data Features A1 A2 TO-247 Combines highest recovery and voltage performance Ultrafast, soft and noise-free recovery Low inductance and low capacitance
More informationMolding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 1-in-1 Package, 12 V and 3 A FEATURES VS-GB3AH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual
More informationMolding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A
Molding Type Module IGBT, Chopper in 1 Package, 12 V and 3 A VS-GB3NH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual INT-A-PAK
More informationSTTH2002C. High efficiency ultrafast diode. Features. Description
High efficiency ultrafast diode Datasheet - production data K TO-220AB K A1 A1 A2 A1 K A2 K A2 I 2 PAK D 2 PAK K K A1 A2 A1 K TO-220FPAB A1 KA2 A2 Features Suited for SMPS Low losses Low forward and reverse
More information< IGBT MODULES > CM50MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION
CIB (Converter+Inverter+Chopper Brake) APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Collector current I C...... 5A Collector-emitter voltage
More information10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
More informationSTTH8R02D-Y. Automotive ultrafast rectifier
Automotive ultrafast rectifier Datasheet - production data A1 A2 K1 K2 Description The STTH8R02D-Y is especially suited for switching mode base drive and transistor circuits. The device is also intended
More informationHalf Bridge IGBT Power Module, 600 V, 100 A
Half Bridge IGBT Power Module, 6 V, A VS-GTTP6N PRODUCT SUMMARY V CES I C at T C = 8 C V CE(on) (typical) at I C = A, 5 C Speed Package Circuit INT-A-PAK 6 V A.65 V 8 khz to 3 khz INT-A-PAK Half bridge
More informationD AB Z DETAIL "B" DETAIL "A"
QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q
More informationProduct Information. Voltage ratings of high power semiconductors
Product Information oltage ratings of high power semiconductors oltage ratings of high power semiconductors Product Information Björn Backlund, Eric Carroll ABB Switzerland Ltd Semiconductors August 2006
More informationSymbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V
STARPOWER SEMICONDUCTOR TM IGBT Preliminary Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More information5SDF 63X0400. High Frequency Welding Diode. VRRM = 400 V Low forward and reverse recovery losses. IFAVm = A High operational reliability
P R E L I M I N A R Y SDF 63X4 High Frequency Welding Diode Properties SDF 63X4 Key Parameters High forward current capability VRRM = 4 V Low forward and reverse recovery losses IFAVm = 6 266 A High operational
More informationItem Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current
IGBT MODULE Silicon N-channel IGBT 17V G version Spec.No.IGBT-SP-163 R P 1 FEATURES High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable
More informationItem Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current
Spec.No.IGBT-SP-162 R1 P1 Silicon N-channel IGBT 33V F version FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity
More informationMG12300D-BN2MM Series 300A Dual IGBT
Series 300A Dual IGBT RoHS Features High short circuit capability,self limiting short circuit current IGBT 3 CHIP(Trench+Field Stop technology) (sat) with positive temperature coefficient Fast switching
More informationHiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE
PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series
More informationSTTH6003TV/CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 2 x 30 A 300 V Tj (max) 175 C V F (max)
STTH63TV/CW MAJOR PRODUCT CHARACTERISTICS HIGH FREQUENCY SECONDARY RECTIFIER IF(AV) VRRM 2 x 3 A 3 V Tj (max) 175 C V F (max) 1 V K1 K1 K2 K trr (max) 55 ns FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY
More informationMBN1500FH45F Silicon N-channel IGBT 4500V F version
Silicon N-channel IGBT 4500V F version Spec.No.IGBT-SP-15014 R7 P1 FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity
More informationSTTH2003. High frequency secondary rectifier. Features. Description
High frequency secondary rectifier Datasheet - production data TO-220AB K A1 A1 A2 A1 K A2 A2 I 2 PAK D 2 PAK K K A1 A2 A1 K TO-220FPAB A1 KA2 A2 Features Combines highest recovery and reverse voltage
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Isolated mounting tab k a 1 2 V R = 1500 V V F 1.2 V / 1.25 V I F(peak)
More informationTO-247AC Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, V CC = 72V,, V GE = 5V Combines low conduction losses with
More informationHigh Voltage SPT + HiPak Modules Rated at 4500V
High Voltage SPT + HiPak Modules Rated at 45V High Voltage SPT + HiPak Modules Rated at 45V A. Kopta, M. Rahimo, U. Schlapbach, R. Schnell, D. Schneider ABB Switzerland Ltd, Semiconductors, Fabrikstrasse
More informationMolding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A
Molding Type Module IGBT, 2 in 1 Package, 12 V, 1 A FEATURES VS-GB1TP12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 1 A, C Speed Package Circuit configuration INT-A-PAK
More informationn-channel TO-220AB 1
PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,
More informationFeatures. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @36V V CE (start), T J = 25 C, V GE = 5V Combines low conduction
More informationAbsolute Maximum Ratings Parameters Max Units. = 140 C 15 A I FSM Non Repetitive Peak Surge T J. Case Styles 15ETH06S. Base. Cathode.
5ETH6 5ETH6S 5ETH6- Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Single Die Center Tap Module t rr = ns typ.
More informationBAT54-Y. Automotive small signal Schottky diodes. Description. Features
Automotive small signal Schottky diodes Datasheet - production data SOT-23 SOT-323 BAT54FILMY (single) BAT54SFILMY (series) BAT54WFILMY (single) BAT54CWFILMY (common cathode) BAT54AWFILMY (common anode)
More informationSTTH3006. Turbo 2 ultrafast high voltage rectifier
Turbo 2 ultrafast high voltage rectifier Datasheet - production data Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package: DOP3I
More informationSTPS60170C. High voltage power Schottky rectifier
High voltage power Schottky rectifier Datasheet - production data Features High junction temperature capability Good trade-off between leakage current and forward voltage drop Low leakage current Low thermal
More informationPrimary MTP IGBT Power Module
Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83
More information1200V 50A IGBT Module
12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching
More informationFeatures. n-channel TO-220AB. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5 khz, and Short Circuit Rated to µs @ 25 C, V GE
More informationGA200TD120U PD D. Ultra-Fast TM Speed IGBT "HALF-BRIDGE" IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V.
"HALF-BRIDGE" IGBT DUAL INT-A-PAK Features Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-4 khz in hard switching, >2 khz in resonant mode Very low conduction and switching
More informationSiC Power Module BSM180D12P2C101
SiC Power Module BSM8DPC Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 98(N.C) 3,4 Features ) Low surge, low switching loss.
More informationSTTH3003CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS. 2 x 15 A 300 V Tj (max) 175 C
STTH33CW HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) x 15 A VRRM 3 V Tj (max) 175 C VF (max) 1 V trr (max) ns FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE
More informationDESCRIPTION. DTV16 50 A tp = 10ms half sine wave
DTVseries (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM VF 5 A to 1 A 15 V 1.3 V to 1.5 V A FEATURES AND BENEFITS K A K HIGH BREAKDOWN VOLTAGE CAPABILITY
More informationM C C. MT200CB18T2 MT200CB16T Amp THYRISTOR/DIODE. Features. MODULE 800~1800 Volts. Applications. Circuit
Features pplications omponents 2736 Marilla Street Chatsworth!"# $%!"# Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix designates RoHS Compliant. See ordering information) International standard package
More informationIGBT XPT Module H Bridge
IGBT XPT Module H Bridge Preliminary data CES = 12 25 = 85 CE(sat) = 1.8 Part name (Marking on product) MIX 61H12ED 13 1 T1 D1 9 T5 D5 2 1 16 E72873 14 3 T2 D2 11 T6 D6 4 12 17 Features: Easy paralleling
More informationFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel
More information