(a) All-SiC 2-in-1 module
|
|
- Coral Holt
- 5 years ago
- Views:
Transcription
1 All-SiC -in- Module CHONABAYASHI, Mikiya * OTOMO, Yoshinori * KARASAWA, Tatsuya * A B S T R A C T Fuji Electric has developed an utilizing a SiC device that has been adopted in the development of a high-performance compact IP inverter characterized by its dustproof and waterproof features. In order to make use of the much lower switching loss of SiC devices compared with Si devices, it is necessary to create a highly reliable packaging technology that ensures high-temperature operation while also reducing wiring inductance inside the module. Fuji Electric has developed a package with a new structure to meet these requirements. As a result, the IP inverter reduces loss in the main circuit by % when compared with conventional inverters that use Si devices.. Introduction In order to achieve a low-carbon society, it is necessary to make positive use of renewable energy and adopt energy-saving power electronics equipment. Power semiconductors play a major role in power electronics equipment for power conversion. Currently, the technological advances of silicon (Si) devices have made them widely popular, but we are already nearing the theoretical limit of their physical properties. It is against this backdrop that wide-band-gap semiconductor silicon carbide (SiC) has been gaining attention as a next generation semiconductor material. Since SiC devices can deliver significantly lower loss than Si devices, it is expected that they will contribute to further energy savings. Fuji Electric has developed and started mass producing an all-sic module consisting of SiC metaloxide-semiconductor field-effect transistor (SiC-MOS- FET) and SiC Schottky barrier diode (SiC-SBD) for mega solar power conditioning sub-systems (PCSs). By utilizing an all-sic module for the booster circuit of a PCS, loss can be reduced by %, and conversion efficiency can achieve the world s highest level of 98.8%. Simultaneously improving conversion efficiency and optimizing the circuit has enabled the PCS to achieve footprint miniaturization of approximately % when compared to the installation of of the previous models (). We have recently developed an all-sic -in- module that has been adopted in the development of a high-performance compact IP inverter characterized by its dustproof and waterproof features (see Fig. ). This inverter can be mounted directly on the wall of workshops and does not require a dedicated electric * Electronic Devices Business Group, Fuji Electric Co., Ltd. (a) panel for storage. This paper describes the element technologies and characteristics of the all-sic -in- module.. Element Technologies (b) IP inverter Fig. and IP inverter. Application of SiC devices SiC has a maximum electric field strength of approximately times that of Si. Therefore, we were able to significantly reduce power loss by reducing the thickness of the drift layer (i.e., the main cause of electric resistance) to about / the size of that of Si. In contrast to Si, the adoption of SiC has made it possible to develop devices with high withstand voltage. Furthermore, since the band gap of SiC is approximately times wider than that of Si, stable operation is possible even at high temperatures. In addition to this, the thermal conductivity of SiC is at least times that of Si, enabling it to have a high exothermicity. In order to implement low on-state resistance for previous Si devices, bipolar operation was necessary. As a result, they suffered from a high switching loss since carrier injection and sweeping were required at the time of the switching operation. Contrary to previous Si devices, SiC devices make use of the above mentioned characteristics, enabling them to be used as
2 Highly thermal-resistant epoxy resin Power substrate Copper pin Fig. -inch wafer devices in the structures of SBD and MOSFET with a withstand voltage of, V or higher. MOSFET and SBD differ from bipolar transistors such as insulated gate bipolar transistors (IGBTs) and pn diodes in that they are capable of extremely fast switching on account of their unipolar operation, thus making it possible for them to greatly reduce switching loss. Fuji Electric commenced operation of the world s first SiC -inch wafer production line at its Matsumoto Factory in. The external appearance of the -inch wafer is shown in Fig.. SiC-MOSFET Aluminum wiring Terminal case Power chip. Newly structured package As mentioned in Section., SiC-MOSFET is capable of much faster switching than Si-IGBT. However, this increased switching speed is accompanied by a higher surge voltage, and as a result, it is necessary to reduce the wiring inductance inside the module. Furthermore, it is necessary to adopt a highly reliable packaging technology for the module that ensures operation at the high temperatures of SiC devices, while also enabling multiple small-sized chips such as SiC- MOSFETs to be connected in parallel. In order to solve these challenges, Fuji Electric has developed a newly structured package for its all-sic -in- module (see Fig. (),() ). By making a change to the previously adopted aluminum wire bonding shown in Fig. (b), we have been able to ensure a flow of high current for the newly structured package of Fig. (a) by utilizing copper pin wiring on the surface of the SiC device. Furthermore, the small size of the SiC chip made it possible to pack them in densely, thus enabling multiple parallel connections. In addition, the newly structured package has reduced internal inductance to about a quarter of that of structures utilizing aluminum wire bonding. By making a change to the conventionally used insulating substrate that mounts the power chip, we have aimed at reducing thermal resistance by adopting a ceramic insulating substrate bonded with thick copper plates. In addition to these changes, we have also made a change to the conventionally used encapsulation resin based silicone gel inside the module, by adopting a highly thermal-resistant epoxy resin to suppress deformations in the bonding portions of the chip and copper pins. By adopting this structure, we have ensured high reliability with a ΔT j power cycle capability of times that of previous products.. Characteristics SiC-SBD (a) Newly structured package Ceramic insulating substrate Silicone gel Terminal Metallic base Ceramic insulating substrate (b) Conventionally structured package Fig. Comparison of newly structured package and conventionally structured package. I -V characteristic at time of conduction The characteristic that determines loss generated at the time of module conduction (steady-state loss) is the I-V characteristic. The I-V characteristics of the all-sic -in- module and are shown in Fig.. Unlike IGBT, MOSFET has no built-in voltage. Therefore, compared with Si-IGBT, the all-sic Current (a.u.) T j = C, V GS = + V I D -V DS characteristic I C -V CE characteristic steady-state loss < steady-state loss Voltage (a.u.) Fig. I -V characteristics issue: Power Semiconductors Contributing in Energy Management All-SiC -in- Module
3 -in- module is capable of reducing steady-state loss under a certain current.. Switching characteristic Switching loss is classified into different types: turn-on loss generated during turn-on, turn-off loss generated during turn-off and reverse recovery loss Turn-on loss Eon (a.u.) V CC = V, I o = rating, T j = C (Si), 7 C (SiC) V GS = +/ V (Si), +/ V (SiC) % Fig. Turn-on loss Turn-off loss Eoff (a.u.) V CC = V, I o = rating, T j = C (Si), 7 C (SiC) V GS = +/ V (Si), +/ V (SiC) 7% Fig. Turn-off loss generated during reverse recovery. Turn-on loss is shown in Fig., turn-off loss in Fig., reverse recovery loss in Fig. 7 and total switching loss in Fig. 8. Compared with the, the all-sic -in- module reduces turn-on loss by %, turn-off loss by Total switching loss Etotal (a.u.) V CC = V, I o = rating, T j = C (Si), 7 C (SiC) V GS = +/ V (Si), +/ V (SiC) 8 7% Fig.8 Total switching loss Inverter generated loss (a.u.) f c = khz, V CC = V, I o =. A (RMS value), R g = 7 Ω, cos =.9, = % All-SiC -in- module Si-IGBT module Fig.9 Inverter generated loss simulation results Diode reverse recovery loss Diode steady-state loss Si-IGBT/SiC-MOS turn-off loss Si-IGBT/SiC-MOS turn-on loss Si-IGBT/SiC-MOS steady-state loss Reverse recovery loss Err (a.u.) V CC = V, I o = rating, T j = C (Si), 7 C (SiC) V GS = +/ V (Si), +/ V (SiC) % Fig.7 Reverse recovery loss Inverter generated loss (a.u.) V CC = V, I o =. A (RMS value), R g = 7 Ω, cos =.9, = 8 8 Carrier frequency (khz) Fig. Carrier frequency dependence of the inverter generated loss FUJI ELECTRIC REVIEW vol. no.
4 Table Product series expansion of the all-sic -in- module Item Type Type Type L External appearance Dimensions (mm) W D H W8 D H W D H Package New structured package Rating Rated voltage (V), Rated current (A),, 7,, Applied MOSFET SiC-MOSFET element SBD SiC-SBD 7% and reverse recovery loss by %. As a result, compared with the conventional, the all-sic -in- module makes it possible to reduce total switching loss by 7%.. Inverter generated loss simulation We implemented an inverter generated loss simulation for the all-sic -in- module and under general use conditions for the inverter. The results of the simulation at a carrier frequency of khz are shown in Fig. 9. Compared with the Si-IGBT module, the all-sic -in- module has a lower inverter generated loss of %. The carrier frequency dependence of the inverter generated loss is shown in Fig.. Furthermore, since the all-sic -in- module has extremely low switching loss compared with the, the increase in inverter generated loss remains small even when increasing the carrier frequency. Therefore, since the all-sic -in- module is capable of implementing switching at a higher carrier frequency than Si-IGBT, passive components such as filters can be miniaturized, and this, in turn, contributes to the miniaturization of power electronics equipment.. Application to products Fuji Electric has utilized the element technology described in Section to produce the all-sic -in- module with a product series expansion as shown in Table. IP inverters have used Type since it has the advantage of being the most compact [dimensions: W D H (mm)]. As a result, the module has a reduced footprint of approximately % compared with conventional s [dimensions: W9 D H (mm)]. The IP inverter is developed for applications used in severe environments such as food processing lines, industrial furnaces and livestock stables. Inverters used in these types of environments must not only be compact, but must have a high degree of protection and a self-cooled structure. In order to achieve this, we have utilized the all- SiC -in- module characteristics (low loss, guaranteed high-temperature operation, high reliability and low thermal resistance) to facilitate the development of the IP inverter. By using the all-sic -in- modules, we have achieved a % reduction in main circuit loss compared with products mounted with the conventional Si modules.. Postscript We have described the all-sic -in- module that contributes to the development of the IP inverter. Currently, the mainstream type of SiC-MOSFET is the planar gate type, which forms a gate on the substrate surface. In order to respond to the market demand for further energy savings and cost reductions, it is necessary to reduce on-state resistance R on during SiC-MOSFET conduction. To achieve this, Fuji Electric is currently developing a trench gate MOSFET (). By equipping the all-sic -in- module with the trench gate MOSFET, it will be possible to further reduce the size and increase the capacity of the module. In the future, we intend to provide the all-sic -in- module to be mounted to various types of power electronics equipment to contribute to the development of power electronics technology and the realization of a low-carbon society. References () Oshima, M. et al. Mega Solar PCS Incorporating All- SiC Module PVI AJ-/. FUJI ELECTRIC REVIEW., vol., no., p.-. () Nashida, N. et al. All-SiC Module for Mega-Solar Power Conditioner. FUJI ELECTRIC REVIEW., vol., no., p.-8. () Nakamura, H. et al. All-SiC Module Packaging Technology. FUJI ELECTRIC REVIEW., vol., no., p.-7. issue: Power Semiconductors Contributing in Energy Management All-SiC -in- Module
5 () Kobayashi,Y. et al. Simulation Based Prediction of SiC Trench MOSFET Characteristics. FUJI ELECTRIC REVIEW., vol., no., p.-. FUJI ELECTRIC REVIEW vol. no.
6 *
All-SiC Modules Equipped with SiC Trench Gate MOSFETs
All-SiC Modules Equipped with SiC Trench Gate MOSFETs NAKAZAWA, Masayoshi * DAICHO, Norihiro * TSUJI, Takashi * A B S T R A C T There are increasing expectations placed on products that utilize SiC modules
More information2016 Vol.62 No. Power Semiconductors Contributing in Energy Management
4 216 Vol.62 No. Power Semiconductors Contributing in Energy Management 216 Vol.62 No. 4 Power Semiconductors Contributing in Energy Management Cover Photo (clockwise from the upper left): FUJI ELECTRIC
More informationPower Semiconductors Contributing in Energy Management
Whole Number 247, ISSN 429-8284 4 214 Vol.6 No. Power Semiconductors Contributing in Energy Management 214 Vol.6 No. 4 Power Semiconductors Contributing in Energy Management Toward establishing low carbon
More information7th-Generation X Series RC-IGBT Module Line-Up for Industrial Applications
7th-Generation X Series RC-IGBT Module Line-Up for Industrial Applications YAMANO, Akio * TAKASAKI, Aiko * ICHIKAWA, Hiroaki * A B S T R A C T In order to meet the market demand of the smaller size, lower
More informationPrimePACK of 7th-Generation X Series 1,700-V IGBT Modules
PrimePACK of 7th-Generation 1,7-V IGBT Modules YAMAMOTO, Takuya * YOSHIWATARI, Shinichi * OKAMOTO, Yujin * A B S T R A C T The demand for large-capacity IGBT modules has been expanding for power conversion
More informationU-series IGBT Modules (1,700 V)
U-series IGBT Modules (1,7 ) Yasuyuki Hoshi Yasushi Miyasaka Kentarou Muramatsu 1. Introduction In recent years, requirements have increased for high power semiconductor devices used in high power converters
More informationV-Series Intelligent Power Modules
V-Series Intelligent Power Modules Naoki Shimizu Hideaki Takahashi Keishirou Kumada A B S T R A C T Fuji Electric has developed a series of intelligent power modules for industrial applications, known
More informationHigh-power IGBT Modules
High-power IGBT Modules Takashi Nishimura Yoshikazu Takamiya Osamu Nakajima 1. Introduction To help curb global warming, clean energy, rather than fossil fuels, has been used increasingly in recent years.
More informationHybrid Si-SiC Modules for High Frequency Industrial Applications
Hybrid Si-SiC Modules for High Frequency Industrial Applications ABSTRACT This presentation introduces a new family of 1200V IGBT modules that combine high switching frequency optimized silicon IGBTs with
More informationHigh Power IGBT Module for Three-level Inverter
High Power IGBT Module for Three-level Inverter Takashi Nishimura Takatoshi Kobayashi Yoshitaka Nishimura ABSTRACT In recent years, power conversion equipment used in the field of new energy and the field
More information2nd-Generation Low Loss SJ-MOSFET with Built-In Fast Diode Super J MOS S2FD Series
2nd-Generation Low Loss SJ-MOSFET with Built-In Fast Diode Super J MOS WATANABE, Sota * SAKATA, Toshiaki * YAMASHITA, Chiho * A B S T R A C T In order to make efficient use of energy, there has been increasing
More informationT-series and U-series IGBT Modules (600 V)
T-series and U-series IGBT Modules (6 V) Seiji Momota Syuuji Miyashita Hiroki Wakimoto 1. Introduction The IGBT (insulated gate bipolar transistor) module is the most popular power device in power electronics
More informationWide Band-Gap Power Device
Wide Band-Gap Power Device 1 Contents Revisit silicon power MOSFETs Silicon limitation Silicon solution Wide Band-Gap material Characteristic of SiC Power Device Characteristic of GaN Power Device 2 1
More informationSiC Switches in Booster Power Modules for Highly Efficient, High-frequency Operation in Solar Inverters
SiC Switches in Booster Power Modules for Highly Efficient, High-frequency Operation in Solar Inverters Dr. Evangelos Theodossiu, Product Marketing Manager What Drives the Great Demand for SiC? Outstanding
More informationNew Power MOSFET. 1. Introduction. 2. Application of Power MOSFETs. Naoto Fujisawa Toshihiro Arai Tadanori Yamada
New Power MOSFET Naoto Fujisawa Toshihiro Arai Tadanori Yamada 1. Introduction Due to the finer patterns and higher integration of LSIs, functions that were used a few years ago in minicomputers have now
More informationEfficiency improvement with silicon carbide based power modules
Efficiency improvement with silicon carbide based power modules Zhang Xi*, Daniel Domes*, Roland Rupp** * Infineon Technologies AG, Max-Planck-Straße 5, 59581 Warstein, Germany ** Infineon Technologies
More informationSome Key Researches on SiC Device Technologies and their Predicted Advantages
18 POWER SEMICONDUCTORS www.mitsubishichips.com Some Key Researches on SiC Device Technologies and their Predicted Advantages SiC has proven to be a good candidate as a material for next generation power
More informationCHAPTER I INTRODUCTION
CHAPTER I INTRODUCTION High performance semiconductor devices with better voltage and current handling capability are required in different fields like power electronics, computer and automation. Since
More informationSixth-Generation V-Series IGBT Module Application Note Chapter 1 Basic Concept and Features
Sixth-Generation V-Series IGBT Module Application Note Chapter 1 Basic Concept and Features Table of contents Page 1 Basic concept of V series 1-2 2 Transition of device structure 1-3 3 Characteristics
More informationHigh-Temperature and High-Frequency Performance Evaluation of 4H-SiC Unipolar Power Devices
High-Temperature and High-Frequency Performance Evaluation of H-SiC Unipolar Power Devices Madhu Sudhan Chinthavali Oak Ridge Institute for Science and Education Oak Ridge, TN 37831-117 USA chinthavalim@ornl.gov
More informationSuperLLD3 Series of 600 V Low-loss Fast-recovery Diodes
SuperLLD3 Series of V Low-loss Fast-recovery Diodes Tetsuhiro Morimoto Taketo Watashima Masaki Ichinose 1. Introduction At present, societal problems such as global warming and environmental disruption
More informationSiC Cascodes and its advantages in power electronic applications
SiC Cascodes and its advantages in power electronic applications WBG Power Conference, Munich, 5 th December 2017 Christopher Rocneanu Director Sales Europe and North America cro@unitedsic.com +4915121063411
More information14 POWER MODULES
14 POWER MODULES www.mitsubishichips.com Wide Temperature Operating Range of High Isolation HV-IGBT Modules Mitsubishi Electric has developed new High Voltage Insulated Gate Bipolar Transistor (HV-IGBT)
More informationOn-wafer GaN Power Semiconductor Characterization. Marc Schulze Tenberge Manager, Applications Engineering Maury Microwave
On-wafer GaN Power Semiconductor Characterization Marc Schulze Tenberge Manager, Applications Engineering Maury Microwave Agenda 1. Introduction 2. Setup 3. Measurements for System Evaluation 4. Measurements
More information1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications
1200 V SiC Super Junction Transistors operating at 250 C with extremely low energy losses for power conversion applications Ranbir Singh, Siddarth Sundaresan, Eric Lieser and Michael Digangi GeneSiC Semiconductor,
More informationPower Matters Microsemi SiC Products
Microsemi SiC Products James Kerr Director of Marketing Power Discrete Products Microsemi Power Products MOSFETs (100V-1200V) Highest Performance SiC MOSFETs 1200V MOSFETs FREDFETs (MOSFET with fast body
More informationCREE POWER PRODUCTS 2012 REVOLUTIONIZING POWER ELECTRONICS WITH SILICON CARBIDE
CREE POWER PRODUCTS 2012 REVOLUTIONIZING POWER ELECTRONICS WITH SILICON CARBIDE Cree, the silicon carbide expert, is leading the power semiconductor revolution. Cree, an innovator of semiconductors for
More informationUSING F-SERIES IGBT MODULES
.0 Introduction Mitsubishi s new F-series IGBTs represent a significant advance over previous IGBT generations in terms of total power losses. The device remains fundamentally the same as a conventional
More informationA new compact power modules range for efficient solar inverters
A new compact power modules range for efficient solar inverters Serge Bontemps, Pierre-Laurent Doumergue Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac Abstract The decrease of
More informationComparison of SiC and Si Power Semiconductor Devices to Be Used in 2.5 kw DC/DC Converter
Comparison of SiC and Si Power Semiconductor Devices to Be Used in 2.5 kw DC/DC Converter M. G. Hosseini Aghdam Division of Electric Power Engineering Department of Energy and Environment Chalmers University
More information2013 Vol.59 No. Power Semiconductors Contributing in Energy Management
4 213 Vol.59 No. Power Semiconductors Contributing in Energy Management 213 Vol.59 No. 4 Power Semiconductors Contributing in Energy Management Cover Photo: FUJI ELECTRIC REVIEW vol.59 no.4 213 date of
More information4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions
ELECTRONICS 4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions Yu SAITOH*, Toru HIYOSHI, Keiji WADA, Takeyoshi MASUDA, Takashi TSUNO and Yasuki MIKAMURA ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
More informationNew 1700V IGBT Modules with CSTBT and Improved FWDi
New 17V IGBT Modules with CSTBT and Improved FWDi John Donlon 1, Eric Motto 1, Shinichi Iura 2, Eisuke Suekawa 2, Kazuhiro Morishita 3, Masuo Koga 3 1) Powerex Inc., Youngwood, PA, USA 2) Power Device
More informationDownsizing Technology for General-Purpose Inverters
Downsizing Technology for General-Purpose Inverters Takao Ichihara Kenji Okamoto Osamu Shiokawa 1. Introduction General-purpose inverters are products suited for function advancement, energy savings and
More informationFuji 7th Generation IGBT Module X Series Application Manual. Apr., 2018 Rev.1.0. Fuji Electric Co., Ltd. All rights reserved.
Fuji 7th Generation IGBT Module X Series Application Manual Apr., 218 Rev.1. MT5F3673 Fuji Electric Co., Ltd. All rights reserved. Warning: This manual contains the product specifications, characteristics,
More informationThe Next Generation of Power Conversion Systems Enabled by SiC Power Devices
Innovations Embedded The Next Generation of Power Conversion Systems Enabled by SiC Power Devices White Paper The world has benefitted from technology innovations and continued advancements that have contributed
More informationPower Devices. 7 th Generation IGBT Module for Industrial Applications
Power Devices 7 th Generation IGBT Module for Industrial Applications Content 7 th Generation IGBT Module for Industrial Applications... 3 1. Introduction... 3 2. Chip technologies... 3 2.1. 7 th generation
More informationWide Band-Gap (SiC and GaN) Devices Characteristics and Applications. Richard McMahon University of Cambridge
Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications Richard McMahon University of Cambridge Wide band-gap power devices SiC : MOSFET JFET Schottky Diodes Unipolar BJT? Bipolar GaN : FET
More informationSiC Power Schottky Diodes in Power Factor Correction Circuits
SiC Power Schottky Diodes in Power Factor Correction Circuits By Ranbir Singh and James Richmond Introduction Electronic systems operating in the -12 V range currently utilize silicon (Si) PiN diodes,
More informationQRTECH AB, Mejerigatan 1, Gothenburg, Sweden
Materials Science Forum Online: 213-1-25 ISSN: 1662-9752, Vols. 74-742, pp 97-973 doi:1.428/www.scientific.net/msf.74-742.97 213 Trans Tech Publications, Switzerland 1 V, 3.3 m SiC bipolar junction transistor
More informationTemperature-Dependent Characterization of SiC Power Electronic Devices
Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali 1 chinthavalim@ornl.gov Burak Ozpineci 2 burak@ieee.org Leon M. Tolbert 2, 3 tolbert@utk.edu 1 Oak Ridge
More informationSiC-JFET in half-bridge configuration parasitic turn-on at
SiC-JFET in half-bridge configuration parasitic turn-on at current commutation Daniel Heer, Infineon Technologies AG, Germany, Daniel.Heer@Infineon.com Dr. Reinhold Bayerer, Infineon Technologies AG, Germany,
More informationPitch Pack Microsemi full SiC Power Modules
Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy
More informationIGBT Module Chip Improvements for Industrial Motor Drives
IGBT Module Chip Improvements for Industrial Motor Drives John F. Donlon Powerex, Inc. 173 Pavilion Lane Youngwood, PA USA Katsumi Satoh Mitsubishi Electric Corporation Power Semiconductor Device Works
More informationDC-DC CONVERTER USING SILICON CARBIDE SCHOTTKY DIODE
International Journal of Scientific & Engineering Research Volume 3, Issue 8, August-2012 1 DC-DC CONVERTER USING SILICON CARBIDE SCHOTTKY DIODE Y.S. Ravikumar Research scholar, faculty of TE., SIT., Tumkur
More informationPower Semiconductor Devices
TRADEMARK OF INNOVATION Power Semiconductor Devices Introduction This technical article is dedicated to the review of the following power electronics devices which act as solid-state switches in the circuits.
More informationIntegrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI
1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward
More informationCREE POWER PRODUCTS Cree SiC HIGH FREQUENCY FOR HIGH POWER. SMALLER. COOLER. BETTER.
CREE POWER PRODUCTS 2015 Cree SiC HIGH FREQUENCY FOR HIGH POWER. SMALLER. COOLER. BETTER. Industry-leading technology and service. That s why Cree should be your power semiconductor partner. Why Cree?
More informationFuji SiC Hybrid Module Application Note
Fuji SiC Hybrid Module Application Note Fuji Electric Co., Ltd Aug. 2017 1 SiC Hybrid Module Application Note Chapter 1 Concept and Features Table of Contents Page 1 Basic concept 2 2 Features 3 3 Switching
More informationFundamentals of Power Semiconductor Devices
В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device
More informationHigh Current Voltage Regulator Module (VRM) Uses DirectFET MOSFETs to Achieve Current Densities of 25A/in2 at 1MHz to Power 32-bit Servers
High Current Voltage Regulator Module (VRM) Uses DirectFET MOSFETs to Achieve Current Densities of 25A/in2 at 1MHz to Power 32-bit Servers Ralph Monteiro, Carl Blake and Andrew Sawle, Arthur Woodworth
More informationSilicon carbide Semiconductor Products
Power Matters. Silicon carbide Semiconductor Products Low Switching Losses High Power Density High Thermal Conductivity Reduced Heat Sink Requirements High Temperature Operation Reduced Circuit Size and
More information1. Introduction. 2. Overview. Mitsuhiro Kakefu Masaki Ichinose
Low I R Schottky Barrier Diode Series Mitsuhiro Kakefu Masaki Ichinose. Introduction Fig. Cross-sectional structure of SBD chip Representative of the recent trends towards smaller size and higher functionality
More informationThe two-in-one chip. The bimode insulated-gate transistor (BIGT)
The two-in-one chip The bimode insulated-gate transistor (BIGT) Munaf Rahimo, Liutauras Storasta, Chiara Corvasce, Arnost Kopta Power semiconductor devices employed in voltage source converter (VSC) applications
More informationField-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
More informationA STUDY INTO THE APPLICABILITY OF P + N + (UNIVERSAL CONTACT) TO POWER SEMICONDUCTOR DIODES AND TRANSISTORS FOR FASTER REVERSE RECOVERY
Thesis Title: Name: A STUDY INTO THE APPLICABILITY OF P + N + (UNIVERSAL CONTACT) TO POWER SEMICONDUCTOR DIODES AND TRANSISTORS FOR FASTER REVERSE RECOVERY RAGHUBIR SINGH ANAND Roll Number: 9410474 Thesis
More informationGeneralized Multilevel Current-Source PWM Inverter with No-Isolated Switching Devices
Generalized Multilevel Current-Source PWM Inverter with No-Isolated Switching Devices Suroso* (Nagaoka University of Technology), and Toshihiko Noguchi (Shizuoka University) Abstract The paper proposes
More informationPower MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
More information(anode) (also: I D, I F, I T )
(anode) V R - V A or V D or VF or V T IA (also: I D, I F, I T ) control terminals (e.g. gate for thyrisr; basis for BJT) - (IR =-I A ) (cathode) I A I F conducting range A p n K (a) V A (V F ) - A anode
More informationELEC-E8421 Components of Power Electronics
ELEC-E8421 Components of Power Electronics MOSFET 2015-10-04 Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Vertical structure makes paralleling of many small MOSFETs on the chip easy. Very
More informationSiC Transistor Basics: FAQs
SiC Transistor Basics: FAQs Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. Oct. 9, 2013 Sam Davis
More informationDiscrete 600V GenX3 XPT IGBTs IXAN0072
Discrete 600V GenX3 XPT IGBTs IXAN0072 Abdus Sattar and Vladimir Tsukanov, Ph.D. IXYS Corporation 1590 Buckeye Drive Milpitas, California 95035 USA 1. Introduction Engineers who design power conversion
More informationSimulation Technology for Power Electronics Equipment
Simulation Technology for Power Electronics Equipment MATSUMOTO, Hiroyuki TAMATE, Michio YOSHIKAWA, Ko ABSTRACT As there is increasing demand for higher effi ciency and power density of the power electronics
More informationENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS
ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS BURAK OZPINECI Oak Ridge National Laboratory Oak Ridge, TN 37831-6472 USA ozpinecib@ornl.gov MADHU SUDHAN CHINTHAVALI Oak Ridge Institute
More informationRaffael Schnell, Product Manager, ABB Switzerland Ltd, Semiconductors LinPak a new low inductive phase-leg IGBT module ABB
Raffael Schnell, Product Manager, ABB Switzerland Ltd, Semiconductors LinPak a new low inductive phase-leg IGBT module Slide 1 The LinPak Main features Low inductive target inductance 1 nh, ready for fast
More informationQ.1: Power factor of a linear circuit is defined as the:
Q.1: Power factor of a linear circuit is defined as the: a. Ratio of real power to reactive power b. Ratio of real power to apparent power c. Ratio of reactive power to apparent power d. Ratio of resistance
More informationSuperFAP-G Series of Power MOSFETs
SuperFAP-G Series of Power s Hiroyuki Tokunishi Tadanori Yamada Masanori Inoue 1. Introduction In recent years, shipments of information and communication equipment, mainly network related equipment such
More informationImpact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors
11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings) Silicon Valley, December 5, 2018 Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors *, A. Kumar,
More informationNew SiC Thin-Wafer Technology Paving the Way of Schottky Diodes with Improved Performance and Reliability
2001 2004 2009 2012 New SiC Thin-Wafer Technology Paving the Way of Schottky Diodes with Improved Performance and Reliability Vladimir Scarpa 1, Uwe Kirchner 1, Rolf Gerlach², Ronny Kern 1 Infineon Technologies
More informationSilicon carbide Semiconductor Products
Power Matters. Silicon carbide Semiconductor Products Low Switching Losses High Power Density High Thermal Conductivity Reduced Heat Sink Requirements High Temperature Operation Reduced Circuit Size and
More informationEDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1
EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance
More informationImproving Totem-Pole PFC and On Board Charger performance with next generation components
Improving Totem-Pole PFC and On Board Charger performance with next generation components Anup Bhalla 1) 1) United Silicon Carbide, Inc., 7 Deer Park Drive, Monmouth Jn., NJ USA E-mail: abhalla@unitedsic.com
More informationUSCi MOSFET progress (ARL HVPT program)
USCi MOSFET progress (ARL HVPT program) L. Fursin, X. Huang, W. Simon, M. Fox, J. Hostetler, X. Li, A. Bhalla Aug 18, 2016 Contents USCi product line 1200V MOSFET progress 10kV IGBT and MPS progress 2
More informationNumerical study on very high speed silicon PiN diode possibility for power ICs in comparison with SiC-SBD
Numerical study on very high speed silicon PiN diode possibility for power ICs in comparison with SiC-SBD Kenichi Takahama and Ichiro Omura Kyushu Institute of Technology Senshui-cho 1-1, Tobata-ku, Kitakyushu
More informationAC-DC-AC-DC Converter Using Silicon Carbide Schottky Diode
Vol. 3, Issue. 4, Jul - Aug. 2013 pp-2429-2433 ISSN: 2249-6645 AC-DC-AC-DC Converter Using Silicon Carbide Schottky Diode Y. S. Ravikumar Faculty of TE, SIT, Tumkur Abstract: Silicon carbide (SiC) is the
More informationSilicon Carbide Semiconductor Products
Power Matters Silicon Carbide Semiconductor Products Low Switching Losses Low Gate Resistance High Power Density High Thermal Conductivity High Avalanche (UIS) Rating Reduced Heat Sink Requirements High
More informationPower Devices Prof. Dr. Ing. Hans Georg Herzog Prof. Dr. Ing. Ralph Kennel
Power Devices Prof. Dr. Ing. Hans Georg Herzog (hg.herzog@tum.de) Prof. Dr. Ing. Ralph Kennel (ralph.kennel@tum.de) Technische Universität München Arcisstraße 21 80333 München Germany 1 Power Devices in
More informationSi, SiC and GaN Power Devices: An Unbiased View on Key Performance Indicators
2016 IEEE Proceedings of the 62nd IEEE International Electron Devices Meeting (IEDM 2016), San Francisco, USA, December 3-7, 2016 Si, SiC and GaN Power Devices: An Unbiased View on Key Performance Indicators
More informationIntroduction Device Achievements & Needs Future Prospects of SiC Power Devices Conclusion
Present Present Status Status And And Future Future Prospects of of SiC SiC Power Power Devices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation,
More informationFast switching and its challenges on Power Module Packaging and System Design
Fast switching and its challenges on Power Module Packaging and System Design Power Electronic Conference Munich 05/12/2017 Stefan Häuser Product Marketing International stefan.haeuser@semikron.com Johannes
More information600 V, 1-40 A, Schottky Diodes in SiC and Their Applications
6 V, 1-4 A, Schottky Diodes in SiC and Their Applications Anant Agarwal, Ranbir Singh, Sei-Hyung Ryu, James Richmond, Craig Capell, Scott Schwab, Brice Moore and John Palmour Cree, Inc, 46 Silicon Dr.,
More informationHard-Switched Silicon IGBTs?
Application Note: CPWR-AN3, Rev. B Hard-Switched Silicon s? Cut Switching Losses in Half Silicon Carbide Schottky s by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling
More information2.8 Gen4 Medium Voltage SST Development
2.8 Gen4 Medium Voltage SST Development Project Number Year 10 Projects and Participants Project Title Participants Institution Y10ET3 Gen4 Medium Voltage SST Development Yu, Husain NCSU 2.8.1 Intellectual
More informationHigh voltage and large current dynamic test of SiC diodes and hybrid module
International Conference on Manufacturing Science and Engineering (ICMSE 2015) High voltage and large current dynamic test of SiC diodes and hybrid module Ao Liu 1, a *, Gang Chen1, 2, Song Bai1, 2, Run
More informationNew Intelligent Power Modules (R Series)
ew Intelligent ower Modules (R Series) Atsushi Yamaguchi Hiroaki Ichikawa 1. Introduction The equipment of power electronics application is comprised of general use inverters, numeric control (C) machine
More informationSilicon Carbide Technology Overview
Silicon Carbide Technology Overview MARCH 2017 www.richardsonrfpd.com richardsonrfpd.com Your Source for Silicon Carbide Power Products Deep Technical Expertise Silicon carbide (SiC) offers significant
More informationSemiconductors. Whole Number 209
Semiconductors Whole Number 209 The key technology to power electronics, Fuji Electric, s power devices. The innovative technologies of Fuji Electric, s power devices lead to market needs. Our power devices
More informationIntroducing SiC Schottky Diode QFN Package
Introducing SiC Schottky Diode QFN Package 2012 Agenda Introduction to Cree Power Schottky Diode QFN Package Benefits in LED and Lighting g Applications Reference Design Test Data Copyright 2012, Cree,
More informationInvestigation of Parasitic Turn-ON in Silicon IGBT and Silicon Carbide MOSFET Devices: A Technology Evaluation. Acknowledgements. Keywords.
Investigation of Parasitic Turn-ON in Silicon IGBT and Silicon Carbide MOSFET Devices: A Technology Evaluation Saeed Jahdi, Olayiwola Alatise, Jose Ortiz-Gonzalez, Peter Gammon, Li Ran and Phil Mawby School
More informationIGBT Technologies and Applications Overview: How and When to Use an IGBT Vittorio Crisafulli, Apps Eng Manager. Public Information
IGBT Technologies and Applications Overview: How and When to Use an IGBT Vittorio Crisafulli, Apps Eng Manager Agenda Introduction Semiconductor Technology Overview Applications Overview: Welding Induction
More informationPower Electronics Power semiconductor devices. Dr. Firas Obeidat
Power Electronics Power semiconductor devices Dr. Firas Obeidat 1 Table of contents 1 Introduction 2 Classifications of Power Switches 3 Power Diodes 4 Thyristors (SCRs) 5 The Triac 6 The Gate Turn-Off
More informationSemiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials
Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials Kjeld Pedersen Department of Physics and Nanotechnology, AAU SEMPEL Semiconductor Materials for Power Electronics
More informationNAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
More informationModeling Power Converters using Hard Switched Silicon Carbide MOSFETs and Schottky Barrier Diodes
Modeling Power Converters using Hard Switched Silicon Carbide MOSFETs and Schottky Barrier Diodes Petros Alexakis, Olayiwola Alatise, Li Ran and Phillip Mawby School of Engineering, University of Warwick
More informationDevelopment of New Generation 3.3kV IGBT module
Development of New Generation 3.3kV IGBT module Mitsubishi_2_8 Seiten_neu.qxd 19.05.2006 12:43 Uhr Seite 2 CONTENT Development of New Generation 3.3kV IGBT module...........................................................
More informationAdvanced Power MOSFET Concepts
В. Jayant Baliga Advanced Power MOSFET Concepts Springer Contents 1 Introduction 1 1.1 Ideal Power Switching Waveforms 2 1.2 Ideal and Typical Power MOSFET Characteristics 3 1.3 Typical Power MOSFET Structures
More informationAnalysis on IGBT Developments
Analysis on IGBT Developments Mahato G.C., Niranjan and Waquar Aarif Abu RVS College of Engineering and Technology, Jamshedpur India Abstract Silicon based high power devices continue to play an important
More informationChapter 1 Power Electronic Devices
Chapter 1 Power Electronic Devices Outline 1.1 An introductory overview of power electronic devices 1.2 Uncontrolled device power diode 1.3 Half- controlled device thyristor 1.4 Typical fully- controlled
More informationGallium nitride (GaN)
80 Technology focus: GaN power electronics Vertical, CMOS and dual-gate approaches to gallium nitride power electronics US research company HRL Laboratories has published a number of papers concerning
More informationADVANCED POWER RECTIFIER CONCEPTS
ADVANCED POWER RECTIFIER CONCEPTS B. Jayant Baliga ADVANCED POWER RECTIFIER CONCEPTS B. Jayant Baliga Power Semiconductor Research Center North Carolina State University Raleigh, NC 27695-7924, USA bjbaliga@unity.ncsu.edu
More information