Advanced Power MOSFET Concepts
|
|
|
- Douglas Parks
- 5 years ago
- Views:
Transcription
1 В. Jayant Baliga Advanced Power MOSFET Concepts Springer
2 Contents 1 Introduction Ideal Power Switching Waveforms Ideal and Typical Power MOSFET Characteristics Typical Power MOSFET Structures Ideal Drift Region for Unipolar Power Devices Charge-Coupled Structures: Ideal Specific On-Resistance Revised Breakdown Models for Silicon Typical Power MOSFET Applications DC-DC Sync-Buck Converter Variable-Frequency Motor Drive Summary 21 References 21 2 D-MOSFET Structure The D-MOSFET Structure Power D-MOSFET On-Resistance Channel Resistance Accumulation Resistance JFET Resistance Drift Region Resistance N + Substrate Resistance Drain and Source Contact Resistance Total On-Resistance Blocking Voltage Impact of Edge Termination Impact of Graded Doping Profile Output Characteristics Simulation Example Device Capacitances Simulation Example 49 xi
3 xii Contents 2.6 Gate Charge Simulation Example Device Figures of Merit Discussion 56 References 61 3 U-MOSFET Structure The U-MOSFET Structure Power U-MOSFET On-Resistance Channel Resistance Accumulation Resistance Drift Region Resistance Total On-Resistance Blocking Voltage Impact of Edge Termination Impact of Graded Doping Profile Output Characteristics Simulation Example Device Capacitances Simulation Example Gate Charge Simulation Example Device Figures of Merit Thick Trench Bottom Oxide Structure On-Resistance Reverse Transfer Capacitance GateCharge Device Figures-of-Merit High Voltage Devices Simulation Results Inductive Load Turn-Off Characteristics Simulation Results Ill 3.11 Discussion 112 References SC-MOSFET Structure The SC-MOSFET Structure Power SC-MOSFET On-Resistance Channel Resistance Accumulation Resistance JFET Resistance Drift Region Resistance Total On-Resistance 127
4 4.3 Blocking Voltage Impact of Edge Termination Output Characteristics Simulation Example Device Capacitances Simulation Example Gate Charge Simulation Example Device Figures of Merit Discussion 153 References 158 CC-MOSFET Structure The CC-MOSFET Structure Charge-Coupling Physics and Blocking Voltage Simulation Results Power CC-MOSFET On-Resistance Channel Resistance Accumulation Resistance for Current Spreading Region Drift Region Resistance Total On-Resistance Output Characteristics Simulation Example Device Capacitances Simulation Example GateCharge Simulation Example Device Figures of Merit Edge Termination Simulation Example High Voltage Devices Simulation Results Process Sensitivity Analysis Discussion 235 References 239 GD-MOSFET Structure The GD-MOSFET Structure Charge-Coupling Physics and Blocking Voltage Simulation Results Power GD-MOSFET On-Resistance Channel Resistance Accumulation Resistance for Current Spreading Region 266 xiii
5 xiv Contents Drift Region Resistance Total On-Resistance Output Characteristics Simulation Example Device Capacitances Simulation Example GateCharge Simulation Example Device Figures of Merit Edge Termination High Voltage Devices Simulation Results Process Sensitivity Analysis Inductive Load Turn-Off Characteristics Simulation Results Discussion 317 References SJ-MOSFET Structure The SJ-MOSFET Structure Charge-Coupling Physics Simulation Results Power SJ-MOSFET On-Resistance Channel Resistance Accumulation Resistance for Current Spreading Region Drift Region Resistance Total On-Resistance Output Characteristics Simulation Example Device Capacitances Simulation Example Gate Charge Simulation Example Device Figures of Merit Edge Termination Simulation Example High Voltage Devices Simulation Results Process Sensitivity Analysis Inductive Load Turn-Off Characteristics Simulation Results Discussion 391 References 396
6 XV 8 Integral Diode Power MOSFET Body Diode Computer Power Supplies Power U-MOSFET Structure Power CC-MOSFET Structure Power JBSFET Structure Motor Control Application Power U-MOSFET Structure Power JBSFET Structure Power GD-MOSFET Structure Power GD-JBSFET Structure Power SJ-MOSFET Structure Power SJ-JBSFET Structure Discussion Low-Voltage Devices High-Voltage Devices 474 References SiC Planar MOSFET Structures Shielded Planar Inversion-Mode MOSFET Structure BlockingMode Threshold Voltage On-State Resistance Capacitances GateCharge Device Figures of Merit Inductive Load Turn-Off Characteristics Body-Diode Characteristics Shielded Planar ACCUFET Structure BlockingMode Threshold Voltage On-State Resistance Capacitances GateCharge Device Figures of Merit Inductive Load Turn-Off Characteristics Body-Diode Characteristics Discussion 531 References Synopsis Computer Power Supplies Inadvertent Turn-On Suppression Device Active Area 539
7 xvi Contents Switching Power Losses Input Capacitance Device Comparison High Voltage Motor Control Device Comparison Summary 552 References 552 About the Author 553 Index 557
Fundamentals of Power Semiconductor Devices
В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device
Chapter 9 SiC Planar MOSFET Structures
Chapter 9 SiC Planar MOSFET Structures In Chap. 1, it was demonstrated that the specific on-resistance of power MOSFET devices can be greatly reduced by replacing silicon with wide band gap semiconductors.
Power MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
ADVANCED POWER RECTIFIER CONCEPTS
ADVANCED POWER RECTIFIER CONCEPTS B. Jayant Baliga ADVANCED POWER RECTIFIER CONCEPTS B. Jayant Baliga Power Semiconductor Research Center North Carolina State University Raleigh, NC 27695-7924, USA bjbaliga@unity.ncsu.edu
FUNDAMENTALS OF MODERN VLSI DEVICES
19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution
Progress Energy Distinguished University Professor Jay Baliga. April 11, Acknowledgements
Progress Energy Distinguished University Professor Jay Baliga April 11, 2019 Acknowledgements 1 Outline SiC Power MOSFET Breakthroughs achieved at NCSU PRESiCE: SiC Power Device Manufacturing Technology
Wide Band-Gap Power Device
Wide Band-Gap Power Device 1 Contents Revisit silicon power MOSFETs Silicon limitation Silicon solution Wide Band-Gap material Characteristic of SiC Power Device Characteristic of GaN Power Device 2 1
ELEC-E8421 Components of Power Electronics
ELEC-E8421 Components of Power Electronics MOSFET 2015-10-04 Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Vertical structure makes paralleling of many small MOSFETs on the chip easy. Very
Appendix: Power Loss Calculation
Appendix: Power Loss Calculation Current flow paths in a synchronous buck converter during on and off phases are illustrated in Fig. 1. It has to be noticed that following parameters are interrelated:
Today s subject MOSFET and IGBT
Today s subject MOSFET and IGBT 2018-05-22 MOSFET metal oxide semiconductor field effect transistor Drain Gate n-channel Source p-channel The MOSFET - Source Gate G D n + p p n + S body body n - drift
Temperature-Dependent Characterization of SiC Power Electronic Devices
Temperature-Dependent Characterization of SiC Power Electronic Devices Madhu Sudhan Chinthavali 1 chinthavalim@ornl.gov Burak Ozpineci 2 burak@ieee.org Leon M. Tolbert 2, 3 tolbert@utk.edu 1 Oak Ridge
High-Temperature and High-Frequency Performance Evaluation of 4H-SiC Unipolar Power Devices
High-Temperature and High-Frequency Performance Evaluation of H-SiC Unipolar Power Devices Madhu Sudhan Chinthavali Oak Ridge Institute for Science and Education Oak Ridge, TN 37831-117 USA chinthavalim@ornl.gov
INTRODUCTION: Basic operating principle of a MOSFET:
INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying
FET(Field Effect Transistor)
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,
Design considerations for chargecompensated. medium-voltage range. Ralf Siemieniec, Cesar Braz, Oliver Blank Infineon Technologies Austria AG
Design considerations for chargecompensated power MOSFET in the medium-voltage range Ralf Siemieniec, Cesar Braz, Oliver Blank Infineon Technologies Austria AG Outline 1 Introduction 2 Application requirements
T-series and U-series IGBT Modules (600 V)
T-series and U-series IGBT Modules (6 V) Seiji Momota Syuuji Miyashita Hiroki Wakimoto 1. Introduction The IGBT (insulated gate bipolar transistor) module is the most popular power device in power electronics
All-SiC Modules Equipped with SiC Trench Gate MOSFETs
All-SiC Modules Equipped with SiC Trench Gate MOSFETs NAKAZAWA, Masayoshi * DAICHO, Norihiro * TSUJI, Takashi * A B S T R A C T There are increasing expectations placed on products that utilize SiC modules
Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
Comparison of Different Cell Concepts for 1200V- NPT-IGBT's
Comparison of Different Cell Concepts for 12V- NPT-IGBT's R.Siemieniec, M.Netzel, R. Herzer, D.Schipanski Abstract - IGBT's are relatively new power devices combining bipolar and unipolar properties. In
ELECTRO-THERMAL TRANSIENT SIMULATION OF SILICON CARBIDE POWER MOSFET
ELECTRO-THERMAL TRANSIENT SIMULATION OF SILICON CARBIDE POWER MOSFET Bejoy N. Pushpakaran, Stephen B. Bayne, Aderinto A. Ogunniyi Electrical and Computer Engineering, Texas Tech University, 2500 Broadway,
Semiconductor Detector Systems
Semiconductor Detector Systems Helmuth Spieler Physics Division, Lawrence Berkeley National Laboratory OXFORD UNIVERSITY PRESS ix CONTENTS 1 Detector systems overview 1 1.1 Sensor 2 1.2 Preamplifier 3
Contents. 1.1 Brief of Power Device Design Current Status of Power Semiconductor Devices Power MOSFETs... 3
Contents Abstract (in Chinese) Abstract (in English) Acknowledgments (in Chinese) Contents Table Lists Figure Captions i iv viii ix xv xvii Chapter 1 Introduction..1 1.1 Brief of Power Device Design. 1
Semiconductor Devices
Semiconductor Devices Modelling and Technology Source Electrons Gate Holes Drain Insulator Nandita DasGupta Amitava DasGupta SEMICONDUCTOR DEVICES Modelling and Technology NANDITA DASGUPTA Professor Department
Three Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
POWER ELECTRONICS. Alpha. Science International Ltd. S.C. Tripathy. Oxford, U.K.
POWER ELECTRONICS S.C. Tripathy Alpha Science International Ltd. Oxford, U.K. Contents Preface vii 1. SEMICONDUCTOR DIODE THEORY 1.1 1.1 Introduction 1.1 1.2 Charge Densities in a Doped Semiconductor 1.1
Power MOSFET Basics. Table of Contents. 2. Breakdown Voltage. 1. Basic Device Structure. 3. On-State Characteristics
Power MOSFET Basics Table of Contents P-body N + Source Gate N - Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State Characteristics 4. Capacitance 5. Gate Charge 6. Gate Resistance 7. Turn-on
Fundamentals of Power Semiconductor Devices
Fundamentals of Power Semiconductor Devices B. Jayant Baliga Fundamentals of Power Semiconductor Devices 1 3 B. Jayant Baliga Power Semiconductor Research Center North Carolina State University 1010 Main
Lecture 19 Real Semiconductor Switches and the Evolution of Power MOSFETS A.. Real Switches: I(D) through the switch and V(D) across the switch
Lecture 19 Real Semiconductor Switches and the Evolution of Power MOSFETS 1 A.. Real Switches: I(D) through the switch and V(D) across the switch 1. Two quadrant switch implementation and device choice
Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors
University of Central Florida Electronic Theses and Dissertations Masters Thesis (Open Access) Modeling And Optimization Of Body Diode Reverse Recovery Characteristics Of Ldmos Transistors 2006 Wesley
POWER ELECTRONICS. Converters, Applications, and Design. NED MOHAN Department of Electrical Engineering University of Minnesota Minneapolis, Minnesota
POWER ELECTRONICS Converters, Applications, and Design THIRD EDITION NED MOHAN Department of Electrical Engineering University of Minnesota Minneapolis, Minnesota TORE M. UNDELAND Department of Electrical
Review of Power IC Technologies
Review of Power IC Technologies Ettore Napoli Dept. Electronic and Telecommunication Engineering University of Napoli, Italy Introduction The integration of Power and control circuitry is desirable for
SYLLABUS OSMANIA UNIVERSITY (HYDERABAD)
UNIT - 1 i SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) JUNCTION DIODE Different Types of PN Junction Formation Techniques, PN Junction Characteristics, Biasing, Band Diagrams and Current Flow, Diode Current
NAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1
EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance
Improving Totem-Pole PFC and On Board Charger performance with next generation components
Improving Totem-Pole PFC and On Board Charger performance with next generation components Anup Bhalla 1) 1) United Silicon Carbide, Inc., 7 Deer Park Drive, Monmouth Jn., NJ USA E-mail: abhalla@unitedsic.com
MOSFET short channel effects
MOSFET short channel effects overview Five different short channel effects can be distinguished: velocity saturation drain induced barrier lowering (DIBL) impact ionization surface scattering hot electrons
Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1
Lecture 15 Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Outline MOSFET transistors Introduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Comparison between JFET and
problem grade total
Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Name: Recitation: November 16, 2005 Quiz #2 problem grade 1 2 3 4 total General guidelines (please read carefully before starting):
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
Topic 2. Basic MOS theory & SPICE simulation
Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1
Lecture 13 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Outline Continue MOSFET Qualitative Operation epletion-type MOSFET Characteristics Biasing Circuits and Examples Enhancement-type
value of W max for the device. The at band voltage is -0.9 V. Problem 5: An Al-gate n-channel MOS capacitor has a doping of N a = cm ;3. The oxi
Prof. Jasprit Singh Fall 2001 EECS 320 Homework 10 This homework is due on December 6 Problem 1: An n-type In 0:53 Ga 0:47 As epitaxial layer doped at 10 16 cm ;3 is to be used as a channel in a FET. A
UF3C120080K4S. 1200V-80mW SiC Cascode DATASHEET. Description. Features. Typical applications CASE D (1) CASE G (4) KS (3) S (2) Rev.
1V-8mW SiC Cascode Rev. A, January 19 DATASHEET UF3C18K4S CASE CASE D (1) Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized
Theory. Week. Lecture Day. TOPICS Week TOPICS. Intoduction Overview of DC Circuits. 1.use of measuring instruments-multimeter,cro etc.
Name of faculty: Sanjay Puri Discipline: Applied Science (Electronics and Communication Engg.) Subject: Fundamentals of Electrical and Electronics Engg. Lesson Plan Duration: 36 weeks (From August 2018
4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions
ELECTRONICS 4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions Yu SAITOH*, Toru HIYOSHI, Keiji WADA, Takeyoshi MASUDA, Takashi TSUNO and Yasuki MIKAMURA ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.3, JUNE, 2014 http://dx.doi.org/10.5573/jsts.2014.14.3.263 Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing
HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET
HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance
Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance
Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
VIRTUAL FABRICATION PROCESS OF PLANAR POWER MOSFET USING SILVACO TCAD TOOLS NORZAKIAH BINTI ZAHARI
VIRTUAL FABRICATION PROCESS OF PLANAR POWER MOSFET USING SILVACO TCAD TOOLS NORZAKIAH BINTI ZAHARI This Report Is Submitted In Partial Fulfilment of Requirements For The Bachelor Degree of Electronic Engineering
PHYSICS OF SEMICONDUCTOR DEVICES
PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES by J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical
Switch mode power supplies Excellent reverse recovery. Power factor correction modules Low gate charge Motor drives Low intrinsic capacitance
Description United Silicon Carbide's cascode products co-package its xj series highperformance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
Trench MOS Having Source with Waffle Patterns
POSTER 2018, PRAGUE MAY 10 1 Trench MOS Having Source with Waffle Patterns Patrik VACULA 1, 2, Vlastimil KOTĚ 1, 2, Dalibor BARRI 1, 2 1 Dept. of Microelectronics, Czech Technical University, Technická
Power Semiconductor Devices
TRADEMARK OF INNOVATION Power Semiconductor Devices Introduction This technical article is dedicated to the review of the following power electronics devices which act as solid-state switches in the circuits.
Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors
11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings) Silicon Valley, December 5, 2018 Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors *, A. Kumar,
Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.
![Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.](/thumbs/96/128002629.jpg "Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.")
Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions:
ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
N-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT
USCi MOSFET progress (ARL HVPT program)
USCi MOSFET progress (ARL HVPT program) L. Fursin, X. Huang, W. Simon, M. Fox, J. Hostetler, X. Li, A. Bhalla Aug 18, 2016 Contents USCi product line 1200V MOSFET progress 10kV IGBT and MPS progress 2
Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
UNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
2nd-Generation Low Loss SJ-MOSFET with Built-In Fast Diode Super J MOS S2FD Series
2nd-Generation Low Loss SJ-MOSFET with Built-In Fast Diode Super J MOS WATANABE, Sota * SAKATA, Toshiaki * YAMASHITA, Chiho * A B S T R A C T In order to make efficient use of energy, there has been increasing
Power MOSFET From Wikipedia, the free encyclopedia
Page 1 of 8 Power MOSFET From Wikipedia, the free encyclopedia A power MOSFETis a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.
Contents. Contents... v. Preface... xiii. Chapter 1 Introduction...1. Chapter 2 Significant Physical Effects In Modern MOSFETs...
Contents Contents... v Preface... xiii Chapter 1 Introduction...1 1.1 Compact MOSFET Modeling for Circuit Simulation...1 1.2 The Trends of Compact MOSFET Modeling...5 1.2.1 Modeling new physical effects...5
SiC-JFET in half-bridge configuration parasitic turn-on at
SiC-JFET in half-bridge configuration parasitic turn-on at current commutation Daniel Heer, Infineon Technologies AG, Germany, Daniel.Heer@Infineon.com Dr. Reinhold Bayerer, Infineon Technologies AG, Germany,
(a) All-SiC 2-in-1 module
All-SiC -in- Module CHONABAYASHI, Mikiya * OTOMO, Yoshinori * KARASAWA, Tatsuya * A B S T R A C T Fuji Electric has developed an utilizing a SiC device that has been adopted in the development of a high-performance
Prerelease product(s)
Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK
SJEP120R125. Silicon Carbide. Normally-OFF Trench Silicon Carbide Power JFET. Product Summary
NormallyOFF Trench Power JFET Features: Compatible with Standard PWM ICs Positive Temperature Coefficient for Ease of Paralleling Temperature Independent Switching Behavior 175 C Maximum Operating Temperature
Semiconductor Physics and Devices
Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because
T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
Power MOSFET Basics: Understanding Superjunction Technology
Originally developed for EDN. For more related features, blogs and insight from the EE community, go to www.edn.com Power MOSFET Basics: Understanding Superjunction Technology Sanjay Havanur and Philip
L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)
L.107.4 MOSFETS, IDENTIFICATION, CURVES. PAGE 1 I. Review of JFET (DRAW symbol for n-channel type, with grounded source) 1. "normally on" device A. current from source to drain when V G = 0 no need to
UNIT 3 Transistors JFET
UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It
IGBTs (Insulated Gate Bipolar Transistor)
IGBTs (Insulated Gate Bipolar Transistor) Description This document describes the basic structures, ratings, and electrical characteristics of IGBTs. It also provides usage considerations for IGBTs. 1
COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.
MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor
T C =25 unless otherwise specified
800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
Reg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI
1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
ADVANCED POWER RECTIFIER CONCEPTS
ADVANCED POWER RECTIFIER CONCEPTS B. Jayant Baliga ADVANCED POWER RECTIFIER CONCEPTS B. Jayant Baliga Power Semiconductor Research Center North Carolina State University Raleigh, NC 27695-7924, USA bjbaliga@unity.ncsu.edu
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
Field Effect Transistor (FET) FET 1-1
Field Effect Transistor (FET) FET 1-1 Outline MOSFET transistors ntroduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Biasing Circuits and Examples Comparison between JFET and epletion-type
Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem
Name of the faculty: GYANENDRA KUMAR YADAV Discipline: APPLIED SCIENCE(C.S.E,E.E.ECE) Year : 1st Subject: FEEE Lesson Plan Lesson Plan Duration: 31 weeks (from July, 2018 to April, 2019) Week Theory Practical
HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET
HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching
27mW - 650V SiC Cascode UJ3C065030K3S Datasheet. Description. Typical Applications. Maximum Ratings
Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
80mW - 650V SiC Cascode UJ3C065080K3S Datasheet. Description. Typical Applications. Maximum Ratings
Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
T C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
HFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
35mW V SiC Cascode UJ3C120040K3S Datasheet. Description. Typical Applications. Maximum Ratings
Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Solid State Device Fundamentals
Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)
Symbol Parameter Typical
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications
FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd
FET Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET (field-effect transistor) unipolar devices - unlike BJTs that use both electron and hole current, they operate only with one type
ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS
ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS BURAK OZPINECI Oak Ridge National Laboratory Oak Ridge, TN 37831-6472 USA ozpinecib@ornl.gov MADHU SUDHAN CHINTHAVALI Oak Ridge Institute
Features. Table 1: Device summary Order code Marking Package Packing STL160N4F7 160N4F7 PowerFLAT TM 5x6 Tape and reel
N-channel 40 V, 2.1 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max I D STL160N4F7 40 V 2.5 mω 120 A Among the lowest
HCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description
N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low