Parametric Study of Contact Fritting for Improved CRes Stability
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1 Parametric Study of for Improved CRes Stability 06/12/2006 SWTW, San Diego Dr. Christian Degen, Oliver Nagler, Michael Horn, Dr. Florian Kaesen Infineon Technologies AG, Germany Communication Solutions Test Techonolgy (COM TT)
2 ??? Fritting??? Electrical conditioning of contacts by overvoltage / overcurrent Holm s theory of electric contacts Can fritting be utilized for contact conditioning of probe needles? Overview over evaluation setup PRobe obeforceinvestigationtool ool (PROFIT) Parameters under study: A-fritting and B-frittingB Current level and polarity pro s s and con s, conclusions Page 2
3 ??? Fritting in theory??? What happens during formation of an electrical contact? Holm s theory of electric contact: (Holm: Electric Contacts, Springer 1967) two conductors in mechanical contact, separated by thin insulating layer (e.g., probe needle on Al-pad separated by layer of native oxide) the insulating layer can be broken mechanically the insulating layer can brake-down locally due to electrical voltage (A-fritting), creating a channel for initial current flow (A-spot) Page 3 the A-spot can be broadened by transport effects due to electric current (B-fritting), reducing CRes
4 How to study fritting of probe needles? universal IFX probing lab: PROFIT = PRobeForceInvestigationTool (SWTW2005: Nagler et al / An Advanced Probe Characterization Tool for Online Contact Basics Measurements ) motorized x-y-z stages, x-z force sensors, top-view microscope standard PCBs for mounting various single probes substrates with standard pad material (Si-wafer pieces, coated with Al, Au, ) LabView based custom-made software for automatic multi-td investigations high precision SMU for parametric tests capabilities: probe force, current/voltage dc, RF, leakage, S-parameter, Page 4
5 How stable is a probe contact? TungstenRhenium cantilever 20µm tip on Aluminum, OD=20µm, 1000TDs CRes in Ohms I=1mA I=10mA I=30mA I=100mA Page 5 number TDs CRes degrades after several 100 TDs without cleaning probes accumulate Al-oxide -> isolating layer between tip and pad
6 Why are electric contacts bad? -> Conductors separated by isolating layer! (here: high current relay contact, from literature) from: Diagnostic routines for automotive relays in the field, IC- and EOL-tests, application note by Tyco Electronics I-U characteristics during fritting cycle A-fritting is voltage induced formation of initial conductive channel B-fritting is current induced broadening of existing channel (for details see Holm: Electric Contacts, Springer 1967) Page 6
7 Formation of electric contact: cantilever TD on Aluminum pad (high precision quasistatic measurement / full trace ~1sec) A-fritting B-fritting sense voltage in Volts Ohms 2.8Ohms m -40m -60m -80m -100m drive current in Amps voltage in Volts contact overdrive Page 7 observation of A-fritting and B-fritting for probe needles on pad material m -40.0m -60.0m -80.0m m current in Amps
8 What are the typical timescales for contact fritting? -> investigation of voltage drop across contact during current step CRes in Ohms CRes during fritting CRes after fritting current ramp current in Amps Page E E E E E E-04 time in seconds current step <50µs full breakdown of insulating layer after ~150µs (typ. <<1msec) instantaneously low CRes for 2nd cycle (after fritting)
9 Characteristic curve of contact fritting: voltage drop across contact during current step voltage drop in Volts Cres ~20Ohms (t=25µs) Cres ~ 9Ohms (t=45µs) Cres ~ 4Ohms (t=145µs) 0.1 Page current in Amps typical timescale <<1msec
10 What is dominant for contact fritting of probe needles? voltage effects vs current effects CRes in Ohms (log scale!) before fritting after fritting Page 10 1 voltage U=-20V (I<1mA) current I=-100mA (U<2.5V) voltage U=-20V (I<1mA) current fritting method (200TDs each) I=-100mA (U<2.5V) voltage+current U=-20V & I=-100mA Is the effect always U<2.5V? -> YES Or do higher voltages assist conditioning? -> current is crucial
11 summary part1 contact fundamentals contact formation and fritting: fritting cycle observed on probe-padcontacts fritting cycle typically <<1msec A-spot prepared by A-fritting at voltages <2.5V (assisted by mechanical scrub) current fritting (B-fritting) significantly lowers CRes next questions: polarity of fritting current? level of fritting current? multi-td test? Page 11
12 Flow of multi-td experiments: 1. meas. CRes before do fritting meas. CRes after -> all the same TD 2. no fritting, only meas. CRes -> reference without any fritting effects Page 12
13 Which polarity of fritting current gives better stability? (cantilever probe, OD=20µm, I=60mA changing polarity) before fritting after fritting CRes in Ohms mA +60mA -60mA Page 13 fritting current (500TD each) negative current = better CRes stability (pad=ground, probe=negative)
14 Which polarity of fritting current gives better stability? (cantilever probe, OD=20µm, I=100mA changing polarity) before fritting after fritting CRes in Ohms mA +100mA -100mA Page 14 fritting current (500TD each) negative current = better CRes stability (pad=ground, probe=negative)
15 How much current is necessary for CRes stabilisation by fritting? before fritting after fritting CRes in Ohms Page 15 0mA -10mA -20mA -30mA -40mA -50mA -60mA -70mA -80mA -90mA -100mA -90mA -80mA -70mA -60mA -50mA fritting current (200TDs each) significant improvement from I > mA to I=-100mA
16 So fritting works are there any drawbacks? 2000TDs, fritting I=-100mA, U=1mV (i.e., no current load) before fritting after fritting 1000 CRes in Ohms Page number TDs Very stable CRes Ohms High fritting current enhances probe pollution -> probe gets addicted to fritting
17 Once more about drawbacks 1000TDs, fritting I=-100mA, I=10mA (i.e., with current load) less degradation ( before fritting ) than U=1mV CRes in Ohms (@I=10mA) before fritting after fritting susceptibility for degradation (contamination) depends on load, i.e., power dissipation or current across contact point CRes stability and fritting may vary between IO and power pins tests with low current values are more sensitive to poor contacts test applications need to be evaluated individually Page number TDs Again very stable CRes Ohms Enhanced pollution is less significant if standard testing current is higher!
18 How significant is fritting enhanced contamination? -> Comparison of fritting OFF / ON / OFF Page 18
19 Page 19 Fritting OFF-ON-OFF: contact conditioning and subsequent probe degradation fritting: I=-100mA (200TD per box) B CRes@I=1mA nofritting C CRes@I=1mA fritting ON P CRes@I=1mA fritting OFF D CRes@I=10mA nofritting E CRes@I=10mA fritting ON L CRes@I=10mA fritting OFF F CRes@I=30mA nofritting G CRes@I=30mA fritting ON M CRes@I=30mA fritting OFF H CRes@I=100mA nofritting I CRes@I=100mA fritting ON J CRes@I=100mA fritting OFF CRes in Ohms fritting improves contact stability but makes probes addicted to current negatives effects become negligible for higher testing currents (power pins)
20 summary / conclusions FRITTING WORKS! A-fritting starts at voltages <2.5V (Tungsten-Rhenium on Al) B-fritting significantly lowers CRes currents >40mA required (with negative polarity) fritting makes addicted : after turning fritting off, CRes is higher than before (current assisted contamination) amount of CRes improvement depends on current level during testing (operation) mode Page 20 fritting is suitable to reduce CRes for power pins where negative effects due to enhanced contamination are less significant fritting very efficiently reduces CRes also for IO-pins but probe cleaning / maintenance strategy must be adjusted accordingly in order to control enhanced contamination fritting cannot substitute online cleaning but it can stabilize CRes in between cleaning executions
21 perspectives FRITTING WORKS! currently used in IFX production fritting used in several test programs but so far only limited productive experience application in front-end and back-end test observation of both, yield improvement and enhanced probe wear out future tasks adjust fritting parameters according to new findings re-evaluate yield improvement vs probe wear out unified recommendations for test development groups Thank you for your attention! Page 21
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