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1 Distributed by: The content and copyrights of the attached material are the property of its owner.
2 HPND Beam Lead PIN Diode Data Sheet Description The HPND-4005 planar beam lead PIN diode is constructed to offer exceptional lead strength while achieving excellent electrical performance at high frequencies. High beam strength offers users superior assembly yield, while extremely low capacitance allows high isolation to be realized. Nitride passivation and polyimide coating provide reliable device protection. Features High Breakdown Voltage: 20 V Typical Low Capacitance: 0.07 pf Typical Low Resistance: 4.7 W Typical Rugged Construction: 4 Grams Minimum Lead Pull Nitride Passivated Applications Outline 2 The HPND-4005 beam lead PIN diode is designed for use in stripline or microstrip circuits. Applications include switching, attenuating, phase shifting, limiting, and modulating at microwave frequencies. The extremely low capacitance of the HPND-4005 makes it ideal for circuits requiring high isolation in a series diode configuration. Maximum Ratings 80 (3.) CATHODE GOLD LEADS S O 2 /Si 3 N 4 PASSIVATION 30 (5.) 30 (5.) Operating Temperature -65 C to +75 C Storage Temperature Power Dissipation at TCASE = 25 C (Derate linearly to zero at 75 C.) -65 C to +200 C 250 mw 8 (0.3) Min. 760 (29.9) 640 (25.2) 60 (2.4) 30 (.2) Minimum Lead Strength Diode Mounting Temp 4 grams pull on either lead 220 C for 0 sec. max. 220 (8.7) 80 (7.) 320 (2.6) 280 (.0) SILICON GLASS 220 (8.7) 80 (7.) 25 MIN (.0) DIMENSIONS IN µm (/000 inch)
3 Electrical Specifications at T A = 25 C Part Number Breakdown Voltage V BR (V) Series Resistance R S (Ω) [2] Capacitance C T (pf) [,2] Forward Voltage V F (V) Reverse Current I R (na) Minority Carrier Lifetime τ (ns) [2] HPND- Min. Typ. Typ. Max. Typ. Max. Max. Max. Min. Typ Test Conditions I R = 0 ma I F = 20 ma I F = 00 MHz V R = 0 V f = 0 GHz Notes:. Total capacitance calculated from measured isolation value in a series configuration. 2. Test performed on packaged samples. I F = 20 ma V R = 30 V I F = 0 ma I R = 6 ma Typical Parameters 00 0, I F - FORWARD CURRENT (ma) V F - FORWARD VOLTAGE (V) Figure. Typical Forward Conduction Characteristics. RF RESISTANCE (OHMS) I F - FORWARD BIAS CURRENT (ma) Figure 2. Typical RF Resistance vs. Forward Bias Current. ISOLATION (db) ISOLATION AT: - 30 V - 0 V INSERTION LOSS AT: 0 ma 20 ma 50 ma FREQUENCY (GHz) Figure 3. Typical Isolation and Insertion Loss in the Series Configuration (Z O = 50 ½). INSERTION LOSS (db) CAPACITANCE (PF) REVERSE VOLTAGE (V) Figure 4. Typical Capacitance at 0 GHz vs. Reverse Bias.
4 Bonding and Handling Procedures for Beam Lead Diodes. Storage Under normal circumstances, storage of beam lead diodes in Avago-supplied waffle/gel packs is sufficient. In particularly dusty or chemically hazardous environments, storage in an inert atmosphere desiccator is advised. 2. Handling In order to avoid damage to beam lead devices, particular care must be exercised during inspection, testing, and assembly. Although the beam lead diode is designed to have exceptional lead strength, its small size and delicate nature requires that special handling techniques be observed so that the devices will not be mechanically or electrically damaged. A vacuum pickup is recommended for picking up beam lead devices, particularly larger ones, e.g., quads. Care must be exercised to assure that the vacuum opening of the needle is sufficiently small to avoid passage of the device through the opening. A #27 tip is recommended for picking up single beam lead devices. A 20X magnification is needed for precise positioning of the tip on the device. Where a vacuum pickup is not used, a sharpened wooden Q-tip dipped in isopropyl alcohol is very commonly used to handle beam lead devices. 3. Cleaning For organic contamination use a warm rinse of trichloroethane, or its locally approved equivalent, followed by a cold rinse in acetone and methanol. Dry under infrared heat lamp for 5 0 minutes on clean filter paper. Freon degreaser, or its locally approved equivalent, may replace trichloroethane for light organic contamination. Ultrasonic cleaning is not recommended. Acid solvents should not be used. 4. Bonding Thermocompression: See Application Note 979 The Handling and Bonding of Beam Lead Devices Made Easy. This method is good for hard substrates only. Wobble: This method picks up the device, places it on the substrate and forms a thermo-compression bond all in one operation. This is described in the latest version of MIL-STD-883, Method 207, and is intended for hard substrates only. Resistance Welding or Parallel-GAP Welding: To make welding on soft substrates easier, a low pressure welding head is recommended. Suitable equipment is available from HUGHES, Industrial Products Division in Carlsbad, CA. Epoxy: With solvent free, low resistivity epoxies (available from ABLESTIK and improvements in dispensing equipment, the quality of epoxy bonds is sufficient for many applications. 5. Lead Stress In the process of bonding a beam lead diode, a certain amount of bugging occurs. The term bugging refers to the chip lifting away from the substrate during the bonding process due to the deformation of the beam by the bonding tool. This effect is beneficial as it provides stress relief for the diode during thermal cycling of the substrate. The coefficient of expansion of some substrate materials, specifically soft substrates, is such that some bugging is essential if the circuit is to be operated over wide temperature extremes. Thick metal clad ground planes restrict the thermal expansion of the dielectric substrates in the X-Y axis. The expansion of the dielectric will then be mainly in the Z axis, which does not affect the beam lead device. An alternate solution to the problem of dielectric ground plane expansion is to heat the substrate to the maximum required operating temperature during the beam lead attachment. Thus, the substrate is at maximum expansion when the device is bonded. Subsequent cooling of the substrate will cause bugging, similar to bugging in thermocompression bonding or epoxy bonding. Other methods of bugging are preforming the leads during assembly or prestressing the substrate.
5 4 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2006 Avago Technologies, Limited. All rights reserved. Obsoletes E AV0-0593EN - October 2, 2006
DSG : Planar Beam-Lead PIN Diode
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![Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma](/thumbs/89/98911879.jpg "Features OBSOLETE. Output Third Order Intercept (IP3) [2] dbm Total Supply Current ma")
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HMC-APH596 LINEAR & POWER AMPLIFIERS - CHIP. GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, GHz. Typical Applications. Features
Typical Applications Features This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Output IP: + dbm P1dB: +24 dbm Gain: 17 db Supply Voltage: +5V
MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
Features. = +25 C, Vdd = 5V, Idd = 85mA*
Typical Applications The is ideal for use as a medium power amplifier for: Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 25% PAE Gain: 15 db
MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
HMMC-1002 DC 50 GHz Variable Attenuator. Data Sheet
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Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
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CLA Series: Silicon Limiter Diodes Packaged and Bondable Chips
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Data Sheet. ASSR-4118, ASSR-4119 and ASSR Form A, Solid State Relay (Photo MOSFET) (400V/0.10A/35 ) Features. Description. Functional Diagram
ASSR-, ASSR-9 and ASSR- Form A, Solid State Relay (Photo MOSFET) (00V/0.0A/ ) Data Sheet Description The ASSR-XX Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically coupled
Features. = +25 C, Vdd 1, 2, 3 = +3V
v.91 HMC519 AMPLIFIER, 1-32 GHz Typical Applications The HMC519 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors
HLMP-D150, HLMP-D155, HLMP-K150 and HLMP-K155 T-13/4 (5 mm), T-1 (3 mm), Low Current, Double Heterojunction AlGaAs Red LED Lamps.
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Features OBSOLETE. = +25 C, With 0/-5V Control, 50 Ohm System. DC - 10 GHz DC - 6 GHz DC - 15 GHz. DC - 6 GHz DC - 15 GHz
v03.1203 Typical Applications Broadband switch for applications: Fiber Optics Microwave Radio Military & Space Test Equipment VSAT Functional Diagram Features High Isolation: >50 @ 10 GHz Low Insertion
it to 18 GHz, 2-W Amplifier
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AMMC-6333 18 33 GHz.2 W Driver Amplifier Data Sheet Chip Size: x 13 m (1 x 51 mils) Chip Size Tolerance: ± 1 m (±.4 mils) Chip Thickness: 1 ± 1 m (4 ±.4 mils) Pad Dimensions: 1 x 1 m (4 x 4 ±.4 mils) Description
GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
Data Sheet GaAs, phemt, MMIC, Power Amplifier, GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): 1 dbm typical Gain: 11
High Power Ka-Band SPDT Switch
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IMPORTANT NOTICE. use
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Data Sheet ACPL-227 / ACPL-247. DC Input Multi-Channel Half-Pitch Phototransistor Optocoupler. Description. Features. ACPL-227 pin layout
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HMC985A. attenuators - analog - Chip. GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, GHz. Features. Typical Applications. General Description
Typical Applications The is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram v2.917 ATTENUATOR, 2-5 GHz Features Wide Bandwidth: