Plan Optik AG. Plan Optik AG PRODUCT CATALOGUE

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1 Plan Optik AG Plan Optik AG PRODUCT CATALOGUE

2 2 In order to service the high demand of wafers more quickly, Plan Optik provides off the shelf products in sizes from 2 up to 300mm diameter. Therefore Plan Optik can serve every customer with stock products in respond to it s needs - simple and fast. Stock wafers by Plan Optik are mainly used as substrate wafers for a variety of applications. Furthermore these wafers are often used in production processes as carriers for Thin-Wafer-Handling or for Wafer-Level-Packaging (WLP) of MEMS. In addition to glass wafers Plan Optik also offers wafers from quartz and fused silica, that can be used in high temperature processes or applications that demand high optical transmission. Also wafers made of alkaline free glass are available from stock as well as Silicon-on-Glass (SOG) compound wafers. These wafers consist of silicon and glass permanently bonded, which can be used in IC manufacturing and MEMS. Plan Optik also manufactures upon customer request. The diameter ranges from 2 to 300 mm with low thickness tolerances, high surface quality and low ttv values. In order to guarantee the highest quality, Plan Optik employs quality management systems such as IATF 16949, ISO and ISO 9001.

3 3 BOROSILICATE WAFERS wafers from borosilicate glass regular or MDF polished various thicknesses in the standard SEMI sizes from 2 up to 300 mm diameter cte matched to silicon suitable for anodic bonding cleanroom packed p. 4 ALKALINE FREE GLASS wafers from alkaline free glass polished 150 mm and 200 mm diameter cte matched to silicon CMOS compatible cleanroom packed p. 7 QUARTZ WAFERS wafers from semiconductor grade quartz and UHP fused silica polished various thicknesses in the standard SEMI sizes from 2 up to 200 mm diameter high chemical purity high UV transmission low CTE low OH content CMOS compatible cleanroom packed p. 8 SILICON ON GLASS WAFERS permanently bonded silicon-glass compound wafers 150 mm and 200 mm diameter thin silicon on glass thin glass on silicon cleanroom packed p. 11

4 4 BOROSILICATE WAFERS REGULAR POLISHING GRADE Glass wafers made of borosilicate glass are often used in Semiconductor and MEMS industry in a wide variety of applications. These wafers can be used for the encapsulation of MEMS devices for example for sensors using Wafer-Level-Packaging (WLP) technology or as blank glass substrates for semiconductor processing and optics. Plan Optik stock products from borosilicate glass have a coefficient of thermal expansion (cte) that is adapted to silicon, which makes them the perfect substrate to use in anodic bonding. The glass features good transmission over a wide spectrum as well as high chemical resistance and mechanical strength. Furthermore, these wafers can be used in high temperature processing. MAIN PROPERTIES material: BOROFLOAT33 cte of 3.25 ppm/k (adapted to Si) temperature resistance up to 500 C transition temperature of 525 C dielectric constant of 4.6 (25 C) optical transmission >91% ( nm) cleanroom packed packing units: 10 pcs, 25 pcs 2 WAFERS 50.8 ± 0.3 mm mm 4 mm 200 V V V V V V V WAFERS 76.2 ± 0.3 mm mm 4 mm 200 V V V V V V V

5 5 100 mm WAFERS ± 0.3 mm < 30 µm 32.5 mm 100 V V V V V V V V V mm WAFERS ± 0.3 mm < 60 µm 57.5 mm 100 V V V V V V V V V mm WAFERS ± 0.3 < 80 µm 4 mm 200 V V V V V V V mm WAFERS ± 0.3 < 100 µm 4 mm 400 V V V V All wafers will be packed in standard wafer cassette boxes. Exception: Thin wafers (<500µm) and 300 mm wafers will be packed coin stacked with separators.

6 6 BOROSILICATE WAFERS MDF POLISHING GRADE MDF polished wafers are treated by an enhanced polishing process (Micro Damage Free) developed by Plan Optik. These wafers are specifically developed for chemical patterning processes (wet-etching) leading to higher yield due to reduced defect rate. Their extremely low sub-nanometer surface roughness makes them ideally suited for direct bonding (fusion bonding). MAIN PROPERTIES material: BOROFLOAT33 surface roughness <0.5 nm (Ra) cte of 3.25 ppm/k (adapted to Si) temperature resistance up to 500 C transition temperature of 525 C dielectric constant of 4.6 (25 C) optical transmission >91% ( nm) sub-surface damaging reduction >99% cleanroom packed packing units: 10 pcs, 25 pcs 100 mm WAFERS 100 ± 0.3 mm 32.5 mm double side MDF polished thickness (μm) article number 500 V mm WAFERS ± 0.3 mm 57.5 mm double side MDF polished thickness (μm) article number 500 V mm WAFERS : ± 0.3 mm double side MDF polished thickness (μm) article number 500 V All wafers will be packed in standard wafer cassette boxes.

7 7 ALKALINE FREE GLASS WAFERS Wafers from alkaline free glass are characterized by their coefficient of thermal expansion (cte) adapted to silicon and their CMOS compatibility. Furthermore these wafers can be used in processes up to 600 C and show extraordinary mechanical stability. Alkaline free glass wafers are often used in sensor technology and as display cover glass as well as in thin glass applications. MAIN PROPERTIES cte of 3.17 ppm/k (adapted to Si) temperature resistance up to 600 C alkaline content below 0.05 wt% (typ.) transition temperature of 680 C dielectric constant of 5.3 (20 C) optical transmission >90% ( nm) cleanroom packed packing units: 10 pcs, 25 pcs 150 mm WAFERS ± 0.3 mm < 60 µm 57.5 mm thickness (μm) article number 500 V mm WAFERS ± 0.3 mm < 80 µm 500 V V All wafers will be packed in standard wafer cassette boxes.

8 8 QUARTZ WAFERS SEMICONDUCTOR GRADE Wafers from semiconductor grade quartz (amorphous) are used in semiconductor processing, solar and industrial applications as well as for thin film coatings. Main feature is the high chemical purity making it a CMOS compatible material combined with excellent mechanical and optical properties. Semiconductor grade quartz features low cte as well as low OH content which enables high temperature processing and good transmission in IR and UV. This material is top notch when it comes to high quality quartz wafers with reasonable pricing. MAIN PROPERTIES OH content <30 ppm trace metal content <20 ppm heat resistance up to 1300 C cte of 0.59 ppm/k optical transmission >80% ( nm) optical transmission >90% ( nm) surface roughness <0.5 nm (Ra) cleanroom packed packing units: 10 pcs, 25 pcs 2 WAFERS 50.8 ± 0.3 mm mm 4 mm 300 V V V V WAFERS 76.2 ± 0.3 mm mm 4 mm 300 V V V V mm WAFERS 100.0± 0.3 mm 32.5 mm 200 V V V V V

9 9 150 mm WAFERS ± 0.3 mm < 60 µm 57.5 mm 200 V V V V V mm WAFERS ± 0.3 mm < 80 µm 300 V V V V All wafers will be packed in standard wafer cassette boxes. Exception: Thin wafers (<500µm) will be packed coin stacked with separators.

10 10 QUARTZ WAFERS UHP FUSED SILICA UHP (ultra high purity) fused silica wafers are the material of choice when it comes to high demands for transmission in UV range and chemical purity. The material features extremely low trace metal and OH content, enabling the use in high thermal processing. In addition the UHP fused silica has a low coefficient of thermal expansion (cte) making it suitable for optical applications in alternating temperatures. Its outstanding performance has made this fused silica to an indispensable material in manufacturing of leading edge semiconductors and optical applications and it thus perfectly adds to Plan Optik s portfolio of materials for stock products. MAIN PROPERTIES OH content <0.2 ppm trace metal content <0.2 ppm heat resistance up to 1200 C cte of 0.59 ppm/k optical transmission >88% ( nm) optical transmission >90% ( nm) surface roughness <0.5 nm (Ra) cleanroom packed packing units: 10 pcs, 25 pcs 100 mm WAFERS ± 0.3 mm mm 525 V V mm WAFERS ± 0.3 mm < 60 µm 57.5 mm 525 V V V mm WAFERS ± 0.3 mm < 80 µm 525 V V All wafers will be packed in standard wafer cassette boxes.

11 11 SILICON ON GLASS (SOG) WAFERS These wafers consist of silicon that is permanently bonded to glass with adapted cte to match the coefficient of thermal expansion of silicon. Due to Plan Optik s manufacturing capabilities any combination of thickness can be manufactured in diameters up to 200 mm. Silicon-on-Glass wafers feature two options that are available off the shelf in both 150mm and 200mm. Either thin silicon is bonded to comparably thick glass wafer that serves as the base respectively a thin glass wafer is bonded to silicon. These wafers can be used in IC manufacturing. Furthermore, these SOG wafers can replace standard SOI wafers with lower parasitic capacitance. Using this combination of silicon and glass as insulator can be used to create new technologies and products in semiconductor and MEMS industry. MAIN PROPERTIES temperature resistance up to 500 C cte matched materials surfaces packing: cleanroom packed packing units: 10 pcs, 25 pcs 150 mm WAFERS polishing scratch-dig Glass: Si type/dopant Si crystall orientation Si resistivity bonding interface defects ± 0.3 mm 57.5 mm BOROFLOAT33 p/bor (100) Ohm cm 1 defect up to 2 mm 10 defect up to 500 µm < 50 µm will be ignored thickness Si (μm) thickness Glass (μm) article number 50 ± ± 10 V ± ± 5 V mm WAFERS polishing scratch-dig Glass: Si type/dopant Si crystall orientation Si resistivity bonding interface defects ± 0.3 mm BOROFLOAT33 p/boron (100) Ohm cm 1 defect up to 2 mm 10 defect up to 500 µm < 50 µm will be ignored thickness Si (μm) thickness Glass (μm) article number 50 ± ± 10 V ± ± 5 V All wafers will be packed coin stacked.

12 ABOUT PLAN OPTIK AG Plan Optik AG is the leading manufacturer of patterned wafers when it comes to technology. In sectors such as consumer electronics, automotive, aerospace, chemistry and pharmaceuticals these wafers are essential components for numerous applications in MEMS technology. The wafers of glass, glass-silicon compounds or quartz are available in sizes up to 300 mm diameter. Wafers by Plan Optik provide high-precision surfaces in the ångström range (= ten millionths of a millimeter), which are achieved through the use of the MDF polishing process developed by the company. Plan Optik wafers are available to minimum tolerances with application-specific patterning and complex material combinations. Partner of international large-scale manufacturers Plan Optik AG s extensive experience in the integration of optical, electronic or chemical functions within a wafer as the basis of MEMS applications has made the company the preferred partner of international large-scale manufacturers. Based on Plan Optik s expert knowledge the wafers are developed in collaboration with customers such as OSRAM, Infineon, Motorola, Samsung, Honeywell and Bosch. Broad range of applications Plan Optik wafers are used, for example, in the mass production of LED lighting technology for high power head lamps of cars. To this end Plan Optik supplies patterned wafers made of a complex material combination. Each die on the wafer is used for the proper encapsulation of the light diode as well as the elements for the design of the light geometry and the color temperature of the head lamp. In adition to the protective function Plan Optik components fulfill optical functions as well. In the field of consumer electronics Plan Optik wafers find application in the manufacturing process of cell phone cameras. Using the wafers as a basis, glass elements are produced for the photo sensors, the so-called CMOS imaging sensors. In this case Plan Optik wafers serve the purpose as carrier as well as providing an optical element. Apart from further applications in the automotive sector (sensors for driving assistance systems, engine controls) and consumer electronics (LED beamers), innovative solutions based on micro patterned components by Plan Optik AG are used for example in the fields of health care (micro dosage systems, lab on chip) and aerospace (positioning and actuating sensors). Advanced production Plan Optik produces high-quality wafers in certified processes on an area of 5,000 square meters by a staff of about 70 employees. Quality control is carried out in accordance with the ISO 9001 certification system and the international automotive standard IATF Plan Optik AG s environmental management is carried out in accordance with ISO Plan Optik has been listed in the Basic Board (former Entry Standard) of the Frankfurt Stock Exchange since 2005 with the WKN (ISIN) A0HGQS. Disclaimer The material data has been taken from the original raw material specification of the raw material producer. Completeness and validity cannot be guaranteed. Plan Optik AG Über der Bitz Elsoff Germany T F sales@planoptik.com V120218