45 Series Photo-MOSFET Relay
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- Baldric Richard
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1 Features: General Purpose Photo MOSFET Relay, switching up to 60V DC or Peak AC THT, SMD or SOP Tested in accordance with AEC-Q101, UL listed, RoHS Compliance Applications: Battery Management Systems, I/O Modules, Test Equipment Markets: Automotive, Telecommunication, Test & Measurement, Security Part Description: S M P - XA45- X X X - X Number of Poles Contact Form Series Number Number of Pins Mounting Type Package Style Special Features 1, 2 A 45 4, 6, 8 D, S, P Tube, Reel Nil, Q, R See page 7 for Glossary Maximum Ambient Temperature = 25 0 C Parameters Symbol Value Units Condition 1A45-4P 2A45-8P 1A45-4D, S 2A45-8D, S 1A45-6D, S INPUT SPECIFICATIONS Continuous LED Current I F ma - Peak LED Current I FP ma f=100hz, 1% Duty Cycle LED Reverse Voltage V R V - Input Power Dissipation P IN mw - OUTPUT SPECIFICATIONS Load Voltage V L DC or Peak AC - Load Current I L ma Peak Load Current I PEAK ma 1 ms, 1 shot Output Power Dissipation P OUT mw - GENERAL SPECIFICATIONS Total Power Dissipation P T mw - I/O Breakdown Voltage V I/O V RMS - I/O Breakdown Voltage V I/O V RMS Suffix R Operating Temperature T OPR -40/+85-40/+85-40/+85-40/+85-40/+85 0 C - Operating Temperature T OPR -40/+85-40/+85-40/+85-40/+85-40/+85 0 C Suffix Q Storage Temperature T STG -40/ / / / / C - R E A C H COMPLIANT Page 1 D. Stastny
2 Maximum Ambient Temperature = 25 0 C Parameters Symbol Min Typ Max Units Condition INPUT SPECIFICATIONS LED Forward Voltage V F V I F = 10mA Operation LED Current I F ON ma - Recovery LED Voltage V F OFF V - OUTPUT SPECIFICATIONS On Resistance: Drain to Drain R ON Ω I F = 5mA, I L =Rating (within 1 sec.) Off-State Leakage Current I LEAK μa V L =60V Output Capacitance C OUT ρf - TRANSMISSION SPECIFICATIONS Turn-On Time T ON ms Turn-Off Time T OFF ms I F = 5mA, I L =Rating (for SOP type) Turn-On Time T ON ms Turn-Off Time T OFF ms I F = 10mA, I L =Rating (for DIP/SMD type) COUPLED SPECIFICATIONS I/O Insulation Resistance R I/O Ω - I/O Capacitance C I/O ρf f=1mhz Photo-MOSFET Relay Dimensions (Tolerances acc. to ISO 2768-mp) DIP4 DIP6 DIP8 Page 2 D. Stastny
3 Photo-MOSFET Relay Dimensions (Tolerances acc. to ISO 2768-mp) SMD4 SMD6 SMD8 Photo-MOSFET Relay Dimensions (Tolerances acc. to ISO 2768-mp) SOP4 SOP8 Photo MOSFET Relay Pin-Out (Top View) 4 PIN 6 PIN 8 PIN Page 3 D. Stastny
4 Photo MOSFET Relay Recommended PCB Pad Layout (Tolerances acc. to ISO 2768-mp) DIP4 (Bottom View) DIP6 (Bottom View) DIP8 (Bottom View) SMD4 (Top View) SMD6 (Top View) SMD8 (Top View) SOP4 (Top View) SOP8 (Top View) Page 4 D. Stastny
5 Photo-MOSFET Relay Load Connection Method TYPE LOAD CONNECTION FEATURE 4-PIN AC OR DC Control bi-directional signal AC OR DC Control bi-directional signal 6-PIN DC On-Resistance is 1/2 of connection 1 2-Make-contacts (Source Common) DC On-Resistance is 1/2 of connection 2 2 inputs and 2 outputs 8-PIN AC OR DC 1 input and 2 outputs Page 5 D. Stastny
6 Load current Vs. Photo MOSFET Relay Reference Data On resistance Vs. Turn on time Vs. Turn off time Vs. LED operate current Vs. LED Turn off current Vs. LED forward voltage Vs. Voltage Vs. current characteristics of output at MOS portion Off state leakage current LED forward current Vs. turn on time characteristics LED forward current Vs. turn off time characteristics Applied voltage Vs. output capacitance characteristics Page 6 D. Stastny
7 Photo MOSFET Relay Tape & Reel Packaging (1,000 pcs per reel) SMD4 SMD6 SMD8 Page 7 D. Stastny
8 Photo MOSFET Relay Tape & Reel Packaging (1,000 pcs per reel) SOP4 SOP8 D S P Q R Glossary Options DIP (Dual-In-Line Package) SMD (Surface Mount Design) SOP (Small-Outline Package) AEC-Q101 / High Temperature Reinforced Isolation Please note: All technical specifications in this series datasheet refer to the standard product range. Modifications in the sense of technical progress are reserved. For general information only. For more specific information, please consult the product datasheet, available upon request. This series datasheet could contain technical inaccuracies or typographical errors. Changes are periodically made to the information herein. These changes will be incorporated in future revisions. For deviating values, latest specifications and product details, please contact your nearest sales office. Page 8 D. Stastny
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RF SOP 1 Form A C R10
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4 PIN ULTRA SMALL SSOP PHOTOTRANSISTOR PHOTOCOUPLER
Features: Halogens free Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) (CTR: 40~320% at I F =10mA, V CE =5V) High isolation voltage between input and output (Viso=3750 V rms ) Compact 4 Pin
UNISONIC TECHNOLOGIES CO., LTD UPC817
UNISONIC TECHNOLOGIES CO., LTD UPC817 4 PIN DIP PHOTOTRANSISTOR DESCRIPTION The UTC UPC817 is a 4 pin DIP phototransistor photocoupler, it uses UTC s advanced technology to provide the customers with high
1 Form A Solid-State Relay (Normally Open)
LH154AAB, LH154AABTR, LH154AT 1 Form A Solid-State Relay (Normally Open) FEATURES Current limit protection Isolation test voltage 53 V RMS A 1 6 S 1 Typical R ON 22 Ω Load voltage 35 V C 2 5 DC Load current
Optocoupler, Photodarlington Output, High Gain, With Base Connection
Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES A 6 B Very high current transfer ratio, 500 % min. C 2 NC 3 i79005_ V D E 5 4 C E High isolation resistance, 0 Ω typical Standard
V DD =30V, I D =200mA, Turn-On Rise Time tr V GS =10V, Turn-Off Delay Time td (off) (Note 1,2) R G =10Ω Turn-Off Fall Time tf
60V N-Channel Enhancement Mode MOSFET ESD Protected Voltage 60 V Current 300mA SOT-23 Unit : inch(mm) Features R DS(ON), V GS @10V, I D @500mA
Features SOT363. Top View. Part Number Case Packaging DMN2004DWK-7 SOT363 3,000/Tape & Reel
NAB YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) max I D T A = +25 C 2V.55Ω @ V GS = 4.5V 54mA BV DSS Description and Applications This MOSFET is designed to minimize the on-state
200mW, 4 PIN DIP Phototransistor Photocoupler
2mW, 4 PIN DIP Phototransistor Photocoupler FEATURES Current transfer ratio (CTR: MIN.8% at IF=5mA, VCE=5V) High isolation voltage between input and output (Viso=5V rms) High collector-emitter voltage
Telecom Switch 1 Form A Solid-State Relay
, LH1529BB, Telecom Switch 1 Form A Solid-State Relay DIP S1 S' FEATURES Solid-state relay and optocoupler in one package Surface-mount package SMD i179034_2 DESCRIPTION The LH1529A and LH1529B telecom
AD4C742-HSTR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information.
Description The AD4C742 is composed of two distinct 1 Form B (normally closed) relays in one compact 8 pin DIP package. Each relay consists of an AlGaAs LED optically coupled to a Photo Diode Array, driving
GU 1 Form A & 1 Form B
Both N.O. and N.C. contacts incorporated in a DIP8-pin package GU Form A & Form B (AQW) 9.78.8... 9.78.8..9... (Height includes standoff) mm inch 8 N.C. 7 N.O. FEATURES. Approx. / the space compared with
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
K2010 Series. cosmo 6PIN PHOTOTRANSISTOR PHOTOCOUPLER. Schematic. Description. Features. Applications
Description Schematic The K series consist of an infrared emitting diode, optically coupled to a phototransistor detector. 6 They are packaged in a 6-pin DIP package and available in wide-lead spacing
7PIN DIP PHOTO POWER TRIAC PHOTOCOUPLER ELRX223 Series
Features Low trigger current T 10mA Peak off state voltage 600V Load current 0.3,0.6,0.9,1.2A Wide operating temperature range of -40 C to 85 C High isolation voltage between input and output (Viso=5000
Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES Excellent CTR linearity depending on forward current 17448 DESCRIPTION 1 A 1 C 2 The SFH615A (DIP) and SFH6156 (SMD) feature a variety
8 PIN DIP DUAL CHANNEL HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER EL253X series
Schematic Features High speed 1Mbit/s 10kV/μs min. common mode transient immunity (EL2611) Guaranteed performance from -40 to 85 Logic gate output High isolation voltage between input and output (Viso=5000
Description. Applications. Features: 1. Anode 2. Cathode 3. Emitter 4. Collector. between input and outpu.
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 Series Schematic Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and outpu (Viso=5000 V rms ) Creepagee
6 PIN DIP SCHMITT TRIGGER PHOTOCOUPLER H11LX Series
6 PIN DIP SCHMITT TRIGGER PHOTOCOUPLER Schematic Features: High data rate, 1MHz typical (NRZ) Free from latch up and oscillation throughout voltage and temperature ranges. Microprocessor compatible drive