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2 Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor Wesentliche Merkmale Kompaktes Gehäuse GaAs-IR-Sendediode Si-Foto Darlington-Transistor mit Tageslichtsperrfilter Hoher Koppelfaktor Anwendungen Geschwindigkeitsüberwachung Motorsteuerung Überwachung des Papiervorschubs in Druckern, Kopier- und Faxgeräten Speicherlaufwerke Steuerung des Druckkopfes in Druckern Münzdetektion Optoelektronische Schalter Zähler Features Compact type GaAs infrared emitter Silicon photo darlington-transistor detector with daylight-cutoff filter High coupling factor Applications Speed control Motor control Monitoring of paper feed in printers, copiers, facsimiles Disk drives Control of print head in printers Coin detection Optoelectronic switches Counter Typ Type Bestellnummer Ordering Code Gehäuse Package Q62702-P5263 Schwarzes Polykarbonat Plastikgehäuse, Anschlüsse im 2.54-mm Raster, Senderseite durch Buchstaben E, Empfängerseite durch Buchstaben S gekennzeichnet, Kathode/Transistoremitter durch schräge Kante gekennzeichnet. Black polycarbonate plastic material housing, solder tabs 2.54-mm (1/10 ) spacing, emitter side marked with letter E, sensor side marked with letter S, cathode/emitter of transistor marked with edge at an angle
3 Grenzwerte T A = 25 C Maximum Ratings Bezeichnung Parameter Sender (GaAs-Diode) Emitter (GaAs Diode) Sperrspannung Reverse voltage Durchlaßstrom Forward current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Empfänger (Si-Fototransistor) Detector (Silicon Phototransistor) Kollektor-Emitter-Spannung Collector-emitter voltage Kollektor-Emitter-Spannung, (t 2 min) Collector-emitter voltage, (t 2 min) Emitter-Kollektor-Spannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation Wärmewiderstand Thermal resistance Gabellichtschranke Slotted Interrupter Lagertemperatur Storage temperature range Betriebstemperatur Operating temperature range Elektrostatische Entladung Electrostatic discharge Wert Value V R 5 V I F (DC) 60 ma Einheit Unit P tot 100 mw R thja 280 K/W V CE 75 V V CE 30 V EC 7 I C 100 ma P tot 150 mw R thja 280 K/W T stg C T op ESD 2 kv
4 Kennwerte T A = 25 C Characteristics Bezeichnung Parameter Sender (GaAs-Diode) Emitter (GaAs Diode) Wellenlänge der Strahlung Wavelength of peak emission Durchlaβspannung, I F = 20 ma, t p = 20 ms Forward voltage Sperrstrom, V R = 5 V Reverse current Kapazität, V R = 0 V, f = 1 MHz Capacitance Empfänger (Si-Fototransistor) Detector (Silicon Phototransistor) Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektr. Bereich der Fotoempfindlichkeit Spectral range of sensitivity S = 10% of S max Kapazität, V CE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom, V CE = 20 V Dark current Gabellichtschranke Slotted Interrupter Kollektor-Emitterstrom Collector-emitter current I F = 1 ma I F = 10 ma Kollektor-Emitter-Sättigungsspannung Collector-emitter-saturation voltage I F = 1 ma; I C = 0.3 ma Wert Value λ peak 950 nm V F 1.2 ( 1.4) V I R 0.01 ( 1) µa C 0 16 pf λ S max 900 nm λ nm C CE 14 pf I CEO 1 ( 50) na I CE min Einheit Unit I CE min > 20 ma > 1 ma V CE sat 0.9 V
5 Forward Current I F = f (V F ) Single pulse, t p = 20 µs 10 4 ma Ι F OHF V 4 VF Max. Permissible Forward Current I F = f (T A ) 90 Ι F ma R thja = 280 K/W OHF C 120 TA Total Power Dissipation for Emitter and Detector P tot = f (T A ) P tot C 100 TA Detector Emitter OHF
6 Maßzeichnung Package Outlines (0.493) (0.477) 3.38 (0.133) 2.98 (0.117) 2.74 (0.108) 2.34 (0.092) 8.2 (0.323) 8.0 (0.315) 1.27 (0.050) Emitter Sensor 11.0 (0.433) 10.6 (0.417) optical axis 6.68 (0.263) 6.28 (0.247) 9.0 (0.354) 8.2 (0.323) 2.54 (0.100) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 8.0 (0.315) 5.0 (0.197) 0.5 (0.020) 0.3 (0.012) 0.25 (0.010) 0.25 (0.010) 0.6 (0.024) 0.4 (0.016) 2 1 Circuitry GPXY
7 Löthinweise Soldering Conditions Bauform Tauch-, Schwalllötung Type Dip, Wave Soldering Peak Temp. Max. Time in (solderbath) Peak Zone Peak Temp. (package temp.) Reflowlötung Reflow Soldering Max. Time in Peak Zone Kolbenlötung Iron Soldering (Iron temp.) 260 C 10 s n. a. 300 C <5s
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