This data sheet is under PCN-revision (see separate data sheet with respect to OS-PCN A). Do not use this version for design-in

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NPN-Silizium-Fototransistor in SMT-Gehäuse mit Linse Silicon NPN Phototransistor in SMT-Package with lens Lead (Pb) Free Product - RoHS Compliant SFH 3219 This data sheet is under PCN-revision (see

1 NPN-Silizium-Fototransistor in SMT-Gehäuse mit Linse Silicon NPN Phototransistor in SMT-Package with lens Lead (Pb) Free Product - RoHS Compliant SFH 3219 This data sheet is under PCN-revision (see separate data sheet with respect to OS-PCN A). Do not use this version for design-in Wesentliche Merkmale TOPLED mit Linse Speziell geeignet für Anwendungen im Bereich von 43 nm bis 115 nm Hohe Linearität Für alle Lötverfahren geeignet Gehäusegleich mit SFH 429, SFH 4219, SFH 4289 Anwendungen Miniaturlichtschranken Industrieelektronik Messen/Steuern/Regeln Sensorik Features TOPLED with lens Especially suitable for applications from 43 nm to 115 nm High linearity Suitable for all soldering methods Same package as SFH 429, SFH 4219, SFH 4289 Applications Miniature photointerrupters Industrial electronics For control and drive circuits Sensor technology Typ Type Bestellnummer Ordering Code SFH 3219 Q6511A2651 > 63 Fotostrom, (E e =,1mW/cm 2,λ=95nm V CE = 5 V) Photocurrent Ipce (μa)

2 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 1 μs Collector surge current Verlustleistung, T A = 25 C Total power dissipation Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb Symbol Symbol Wert Value T op ; T stg C V CE 35 V I C 15 ma I CS 75 ma Einheit Unit P tot 165 mw R thja 45 K/W

3 Kennwerte (T A = 25 C, λ = 95 nm) Characteristics Bezeichnung Parameter Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max Bestrahlungsempfindliche Fläche ( 22 μm) Radiant sensitive area Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität, V CE = V, f = 1 MHz, E = Capacitance Dunkelstrom Dark current V CE = 2 V, E = Fotostrom Photo current E e =.1 mw/cm 2, V CE = 5 V Anstiegszeit/Abfallzeit Rise and fall time I C = 1 ma, V CC = 5 V, R L = 1 kω Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = 2 μa E e =.1 mw/cm 2 Symbol Symbol Wert Value λ Smax 99 nm λ nm Einheit Unit A.38 mm 2 L B L W mm mm ϕ ± 25 Grad deg. C CE 5. pf I CEO 1 ( 5) na I PCE 63 μa t r, t f 7 μs V CEsat 15 mv

4 Directional Characteristics S rel = f (ϕ) OHF6 ϕ

5 Relative Spectral Sensitivity S rel = f (λ) 1 % S rel nm 11 λ Total Power Dissipation P tot = f (T A ) 2 mw P tot OHF27 OHF871 Photocurrent I PCE = f (V CE ), E e = Parameter Ι 1 ma PCE OHF7 mw.4 cm 2 mw.2 cm 2 mw.1 cm V 35 V CE Capacitance C CE = f (V CE ), f = 1 MHz, E = 5. C CE pf OHF1528 Photocurrent I PCE /I PCE25 = f (T A ), V CE = 5 V 1.6 Ι PCE Ι PCE Dark Current I CEO = f (V CE ), E = Ι na CEO OHF C 1 TA OHF C 1 T A Dark Current I CEO = f (T A ), V CE = 5 V, E = Ι 1 3 na CEO OHF V 1 2 V CE V 35 V CE C 1 TA

6 Maßzeichnung Package Outlines 3.5 (.138) max. 3. (.118) 2.6 (.12) 2.3 (.91) 2.1 (.83) (.83) 1.7 (.67).9 (.35).7 (.28) 3.4 (.134) 3. (.118) 3.7 (.146) 3.3 (.13) ø2.6 (.12) ø2.55 (.1) Package marking (.43).5 (.2).6 (.24).4 (.16).1 (.4) (typ.).18 (.7).13 (.5) GEOY6956 Maße in mm (inch) / Dimensions in mm (inch). Gehäuse / Package Anschlussbelegung pin configuration Farbe Color TOPLED mit Linse (P-LCC-2) / TOPLED with lens (P-LCC-2) 1 = Emitter / emitter 2 = Kollektor / collector weiß white

7 Empfohlenes Lötpaddesign Recommended Solderpad Design 2.6 (.12) 1.5 (.59) 4.5 (.177) 2.6 (.12) 1.5 (.59) 4.5 (.177) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Lötstopplack Solder resist 2 Cu-Fläche > 16 mm Cu-area > 16 mm 2 OHLPY97 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-2C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-2C) T 3 C C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 1 s min 3 s max OHLA687 + C 26 C -5 C 245 C ±5 C +5 C 235 C - C s max 1 s max Ramp Down 6 K/s (max) 1 5 Ramp Up 3 K/s (max) 25 C s 3 t

Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C 25 2 235 C... 26 C 1. Welle 1. wave 1 s 2. Welle 2.

8 Wellenlöten (TTW) (nach CECC 82) TTW Soldering (acc. to CECC 82) T 3 C C C 1. Welle 1. wave 1 s 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves OHLY ca 2 K/s 5 K/s 2 K/s 1 1 C C 5 2 K/s Zwangskühlung forced cooling s 25 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 3010

NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 31 Wesentliche Merkmale Sehr kleines SMT-Gehäuse (SCD 8): (LxBxH) 1,7 mm x,8 mm x,65 mm Speziell geeignet