Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS

Transcription

1 i17906 Optocoupler, Phototransistor Output, DESCRIPTION The SFH610A (DIP) and SFH6106 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.4 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 6090 (DIN VDE 080) for reinforced insulation up to an operation voltage of 400 V RMS or DC. Specifications subject to change. A C A C SFH610A 4 3 E C SFH E 3 C SFH610A, SFH6106 FEATURES Good CTR linearity depending on forward current Isolation test voltage, 300 V RMS High collector emitter voltage, V CEO = 70 V Low saturation voltage Fast switching times Low CTR degradation Temperature stable Low coupling capacitance End stackable, 0.100" (2.4 mm) spacing High common mode interference immunity Lead (Pb)-free component Component in accordance to RoHS 2002/9/EC and WEEE 2002/96/EC AGENCY APPROVALS UL177, file no. E2744 system code H or J, double protection DIN EN (VDE 0884) available with option 1 CSA 9371 BSI IEC 6090; IEC 6006 ORDER INFORMATION PART SFH610A- SFH6106-T X006 X018T X006 X006 X007 X006 Note For additional information on the available options refer to option information. REMARKS CTR 40 % to 80 %, DIP-4 CTR 63 % to 12 %, DIP-4 CTR 100 % to 200 %, DIP-4 CTR 160 % to 320 %, DIP-4 CTR 20 % to 00 %, DIP-4 CTR 40 % to 80 %, SMD-4 CTR 63 % to 12 %, SMD-4 CTR 100 % to 200 %, SMD-4 CTR 160 % to 320 %, SMD-4 CTR 20 % to 00 %, SMD-4, tape and reel CTR 40 % to 80 %, DIP mil CTR 40 % to 80 %, SMD mil, wide leadspread CTR 63 % to 12 %, DIP mil CTR 100 % to 200 %, DIP mil CTR 100 % to 200 %, SMD-4 CTR 160 % to 320 %, DIP mil Document Number: For technical questions, contact: optocoupler.answers@vishay.com Rev. 2.0, 10-Dec

2 SFH610A, SFH6106 Optocoupler, Phototransistor Output, ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V DC forward current 60 ma Surge forward current t 10 µs SM 2. A Power dissipation P diss 100 mw OUTPUT Collector emitter voltage V CE 70 V Emitter collector voltage V EC 7 V Collector current I C 0 ma t p 1.0 ms I C 100 ma Power dissipation P diss 10 mw COUPLER Isolation test voltage between emitter and detector V ISO 300 V RMS Creepage distance 7 mm Clearance distance 7 mm Insulation thickness between emitter and detector 0.4 mm Comparative tracking index per DIN IEC112/VDE 0303 part 1 17 Isolation resistance V IO = 00 V, T amb = 2 C R IO Ω V IO = 00 V, T amb = 100 C R IO Ω Storage temperature range T stg - to + 10 C Ambient temperature range T amb - to C Soldering temperature (2) max. 10 s, dip soldering distance to seating plane 1. mm T sld 260 C Notes (1) T amb = 2 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 60 ma V F V Reverse current V R = 6 V I R µa Capacitance V R = 0 V, f = 1 MHz C O 13 pf Thermal resistance R thja 70 K/W OUTPUT Collector emitter capacitance V CE = V, f = 1 MHz C CE.2 pf Thermal resistance R thja 00 K/W I CEO 2 0 na I CEO 2 0 na I CEO 2 0 na I CEO 2 0 na Collector emitter leakage current V CE = 10 V I CEO 100 na I CEO 100 na I CEO 100 na I CEO 100 na SFH610A- I CEO 100 na SFH6106-T I CEO 100 na For technical questions, contact: optocoupler.answers@vishay.com Document Number: Rev. 2.0, 10-Dec-08

3 Optocoupler, Phototransistor Output, SFH610A, SFH6106 ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector emitter saturation voltage = 10 ma, I C = 2. ma V CEsat V Coupling capacitance f = 1 MHz C C 0.4 pf Note T amb = 2 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT CTR % CTR % CTR % CTR % = 10 ma, V CE =.0 V CTR % CTR % CTR % CTR % I C / SFH610A- CTR % SFH6106-T CTR % CTR % CTR % CTR 22 4 % = 1 ma, V CE = V CTR 22 4 % CTR % CTR % CTR 6 90 % CTR 6 90 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Current V CC = V, R L = 7 Ω 10 ma Rise time V CC = V, R L = 7 Ω t r 2 µs Fall time V CC = V, R L = 7 Ω t f 2 µs Turn-on time V CC = V, R L = 7 Ω t on 3 µs Turn-off time V CC = V, R L = 7 Ω t off 2.3 µs Cut-off frequency V CC = V F CO 20 khz SATURATED 20 ma Current 10 ma 10 ma ma Document Number: For technical questions, contact: optocoupler.answers@vishay.com Rev. 2.0, 10-Dec

4 SFH610A, SFH6106 Optocoupler, Phototransistor Output, SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SATURATED Rise time Fall time Turn-on time Turn-off time Note All values presented are typical values. t r 2 µs t r 3 µs t r 3 µs t r 4 µs t f 11 µs t f 14 µs t f 14 µs t f 1 µs t on 3 µs t on 4.2 µs t on 4.2 µs t on 6 µs t off 18 µs t off 23 µs t off 23 µs t off 2 µs For technical questions, contact: optocoupler.answers@vishay.com Document Number: Rev. 2.0, 10-Dec-08

5 Optocoupler, Phototransistor Output, SFH610A, SFH6106 SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) /100/21 Comparative tracking index CTI V IOTM V V IORM 890 V P SO 400 mw I SI 27 ma T SI 17 C Creepage distance standard DIP-4 7 mm Clearance distance standard DIP-4 7 mm Creepage distance 400 mil DIP-4 8 mm Clearance distance 400 mil DIP-4 8 mm Insulation thickness, reinforced rated per IEC mm Note As per IEC , , this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS T amb = 2 C, unless otherwise specified R = 7 Ω L V CC =V 1.0 k Ω V CC =V I C 47 Ω 47 Ω isfh610a_01 isfh610a_02 Fig. 1 - Linear Operation (without Saturation) Fig. 3 - Switching Operation (with Saturation) I C % = 10 ma, V CC =.0 V I c 30 ma = 14 ma = 12 ma = 10 ma = 8 ma = 6 ma = 4 ma = 1 ma = 2 ma T A ( C) isfh610a_03 Fig. 2 - Current Transfer Ratio (CTR) vs. Temperature V 1 V CE isfh610a_04 Fig. 4 - Output Characteristics (Typ.) Collector Current vs. Collector Emitter Voltage Document Number: For technical questions, contact: optocoupler.answers@vishay.com Rev. 2.0, 10-Dec

6 SFH610A, SFH6106 Optocoupler, Phototransistor Output, V F 1.2 V 1.1 V F = f ( ) 2 C 0 C 7 C 120 ma 90 P tot = f (T A ) ma 10 2 isfh610a_0 Fig. - Diode Forward Voltage vs. Forward Current C 100 T A isfh610a_08 Fig. 8 - Permissible Power Dissipation vs. Temperature 20 pf f = 1.0 MHz 200 P tot mw 1 C 10 Transistor Diode C CE V 10 2 V e isfh610a_06 Fig. 6 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage C 100 T A isfh610a_09 Fig. 9 - Permissible Diode Forward Current vs. Ambient Temperature 10 4 ma D = D = t p T t p 0.02 Pulse cycle D = parameter T I F DC s 10 1 t p isfh610a_07 Fig. 7 - Permissible Pulse Handling Capability Forward Current vs. Pulse Width For technical questions, contact: optocoupler.answers@vishay.com Document Number: Rev. 2.0, 10-Dec-08

7 Optocoupler, Phototransistor Output, SFH610A, SFH6106 PACKAGE DIMENSIONS in inches (millimeters) (6.81) 0.2 (6.48) Pin 1 identification (4.83) (4.) (7.92) (7.2) IS OM ethod A 0.04 (1.14) (0.76) (0.84) (0.74) 10 i typ (1.32) (1.22) 0.10 (3.81) (3.30) 0.03 (0.89) (0.1) 0.10 (2.67) 0.09 (2.41) 3 to (0.30) (0.20) 0.20 (6.3) (.84) (3.30) (2.79) SMD (6.81) 0.2 (6.48) (4.83) (4.) PIN 1 IDENTIFICATION (2.4) R (0.2) (0.76) (1.78) 0.04 (1.14) (0.76) 0.31 (8.00) min (1.2) 0.43 (11.0) (0.84) (0.74) 0.39 (10.03) 0.37 (9.2) (7.92) (7.2) (3.81) (3.30) ISO methoda i typ (1.32) (1.22) (0.249) (0.102) 0.10 (2.67) 0.09 (2.41) Lead coplanarity (0.102) max. ( K ) (0.30) (0.20) Document Number: For technical questions, contact: optocoupler.answers@vishay.com Rev. 2.0, 10-Dec

8 SFH610A, SFH6106 Optocoupler, Phototransistor Output, Option (10.36) (9.96) (7.8) (7.4) Option (7.62) typ. Option (7.62) typ (0.7) (4.6) (4.1) (0.0) (0.00) 0.10 (3.81) (3.30) (0.3) (0.2) (10.16) (10.92) 0.31 (8.0) min (8.4) min (10.3) max (9.27) min (12.00) max For technical questions, contact: optocoupler.answers@vishay.com Document Number: Rev. 2.0, 10-Dec-08

9 Optocoupler, Phototransistor Output, SFH610A, SFH6106 OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/40/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 33, D-7402 Heilbronn, Germany Document Number: For technical questions, contact: optocoupler.answers@vishay.com Rev. 2.0, 10-Dec-08 61

10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 18-Jul-08 1