AVX Transient Suppression Products

Transcription

1 AVX Transient Suppression Products Transient Suppression Version 11.1

2 Transient Suppression Products The contents of this catalog are entitled and located on the pages noted below: TransGuard Product Overview Part Number Identification TransGuard Electrical Characteristics Dimensions TransGuard Performance Curves TransGuard Automotive Series Miniature AC Varistor MAV Radial Leaded High Tempeature Automotive, 15ºC Rated Radial Leaded Controlled Capacitance Multilayer Varistor Miniature 21 MLV High Temperature Automotive 15ºC Rated Varistors Glass Encapsulated SMD Varistor MLV StaticGuard StaticGuard Automotive Series MultiGuard AntennaGuard 42/ AntennaGuard/Sub pf AntennaGuard Automotive Series USB Series Varistors Communication BUS Varistors UltraGuard TransFeed and TransFeed Array TransGuard Typical Circuits Requiring Protection TransGuard Application Notes Packaging - Chips Packaging - Axial Leads NOTICE: Specifications are subject to change without notice. Contact your nearest AVX Sales Office for the latest specifications. All statements, information and data given herein are believed to be accurate and reliable, but are presented without guarantee, warranty, or responsibility of any kind, expressed or implied. Statements or suggestions concerning possible use of our products are made without representation or warranty that any such use is free of patent infringement and are not recommendations to infringe any patent. The user should not assume that all safety measures are indicated or that other measures may not be required. Specifications are typical and may not apply to all applications.

3 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors GENERAL DESCRIPTION The AVX TransGuard Transient Voltage Suppressors (TVS) with unique high-energy multilayer construction represents state-of-the-art overvoltage circuit protection. Monolithic multilayer construction provides protection from voltage transients caused by ESD, lightning, NEMP, inductive switching, etc. True surface mount product is provided in EIA industry standard packages. Thru-hole components are supplied as conformally coated axial devices. TRANSGUARD DESCRIPTION TransGuard products are zinc oxide (ZnO) based ceramic semiconductor devices with non-linear voltage-current characteristics (bi-directional) similar to back-to-back zener diodes. They have the added advantage of greater current and energy handling capabilities as well as EMI/RFI attenuation. Devices are fabricated by a ceramic sintering process that yields a structure of conductive ZnO grains surrounded by electrically insulating barriers, creating varistor-like behavior. The number of grain-boundary interfaces between conducting electrodes determines Breakdown Voltage of the device. High voltage applications such as AC line protection require many grains between electrodes while low voltage requires few grains to establish the appropriate breakdown voltage. Single layer ceramic disc processing proved to be a viable production method for thick cross section devices with many grains, but attempts to address low voltage suppression needs by processing single layer ceramic disc formulations with huge grain sites has had limited success. AVX, the world leader in the manufacture of multilayer ceramic capacitors, now offers the low voltage transient protection marketplace a true multilayer, monolithic surface mount varistor. Technology leadership in processing thin dielectric materials and patented processes for precise ceramic grain growth have yielded superior energy dissipation in the smallest size. Now a varistor has voltage characteristics determined by design and not just cell sorting whatever falls out of the process. Multilayer ceramic varistors are manufactured by mixing ceramic powder in an organic binder (slurry) and casting it into thin layers of precision thickness. Metal electrodes are deposited onto the green ceramic layers which are then stacked to form a laminated structure. The metal electrodes are arranged so that their terminations alternate from one end of the varistor to the other. The device becomes a monolithic block during the sintering (firing) cycle providing uniform energy dissipation in a small volume. 1

4 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors PART NUMBER IDENTIFICATION Surface Mount Devices Axial Leaded Devices Important: For part number identification only, not for construction of part numbers. The information below only defines the numerical value of part number digits, and cannot be used to construct a desired set of electrical limits. Please refer to the TransGuard part number data for the correct electrical ratings. V C D 15 R P TERMINATION FINISH: P = Ni/Sn Alloy (Plated) Important: For part number identification only, not for construction of part numbers. The information below only defines the numerical value of part number digits, and cannot be used to construct a desired set of electrical limits. Please refer to the TransGuard part number data for the correct electrical ratings. V A 1 5 D 15 R L LEAD FINISH: Copper clad steel, solder coated PACKAGING (Pcs/Reel): STYLE D R T W VC42 N/A N/A N/A 1, VC63 1, 4, 1, N/A VC85 1, 4, 1, N/A VC126 1, 4, 1, N/A VC121 1, 2, 1, N/A CLAMPING VOLTAGE: Where: 1 = 12V 5 = 5V 15 = 18V 56 = 6V 2 = 22V 58 = 6V 25 = 27V 62 = 67V 3 = 32V 65 = 67V 39 = 42V 11 = 1V 4 = 42V 121 = 12V ENERGY: Where: A =.1J J = 1.5J S = J B =.2J K =.6J T =.1J C =.3J L =.8J U = 4.-5.J D =.4J M = 1.J V =.2J E =.5J N = 1.1J W = 6.J F =.7J P = 3.J X =.5J G =.9J Q = 1.3J Y = 12.J H = 1.2J R = 1.7J Z = 25.J WORKING VOLTAGE: Where: 3 = 3.3 VDC 18 = 18. VDC 5 = 5.6 VDC 26 = 26. VDC 9 = 9. VDC 3 = 3. VDC 12 = 12. VDC 48 = 48. VDC 14 = 14. VDC 6 = 6. VDC 85 = 85. VDC CASE SIZE DESIGNATOR: SIZE LENGTH WIDTH 42 1.±.1mm (.4"±.4").5±.1mm (.2"±.4") ±.15mm (.63"±.6").8±.15mm (.32"±.6") ±.2mm (.79"±.8") 1.25±.2mm (.49"±.8") ±.2mm (.126"±.8") 1.6±.2mm (.63"±.8") ±.2mm (.126"±.8") 2.49±.2mm (.98"±.8") CASE STYLE: C = Chip PRODUCT DESIGNATOR: V = Varistor MARKING: All standard surface mount TransGuard chips will not be marked. PACKAGING (Pcs/Reel): STYLE D R T VA1 1, 3, 7,5 VA2 1, 2,5 5, CLAMPING VOLTAGE: Where: 1 = 12V 58 = 6V 15 = 18V 65 = 67V 3 = 32V 11 = 1V 4 = 42V 121 = 12V ENERGY: Where: A =.1J D =.4J K = 2.J WORKING VOLTAGE: Where: 3 = 3.3 VDC 26 = 26. VDC 5 = 5.6 VDC 3 = 3. VDC 14 = 14. VDC 48 = 48. VDC 18 = 18. VDC 6 = 6. VDC CASE SIZE DESIGNATOR: SIZE LENGTH DIAMETER mm (.17") 2.54mm (.1") mm (.19") 3.56mm (.14") CASE STYLE: A = Axial PRODUCT DESIGNATOR: V = Varistor MARKING: All axial TransGuards are marked with vendor identification, product identification, voltage/energy rating code and date code (see example below): Where: AVX TVS 5D 825 AVX = Always AVX (Vendor Identification) TVS = Always TVS (Product Identification - Transient Voltage Suppressor) 5D = Working VDC and Energy Rating (Joules) Where: 5 = 5.6 VDC, D =.4J 725 = Three Digit Date Code Where: 8 = Last digit of year (28) 25 = Week of year Not RoHS Compliant LEAD-FREE COMPATIBLE COMPONENT 2 For RoHS compliant products, please select correct termination style.

5 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors ELECTRICAL CHARACTERISTICS AVX Working Working Breakdown Clamping Test Maximum Transient Peak Typical Frequency Case Part Number Voltage Voltage Voltage Voltage Current Leakage Energy Current Cap Size (DC) (AC) For VC Current Rating Rating VC633A ±2% K 63 VC853A ±2% K 85 VC853C ±2% K 85 VC1263A ±2% K 126 VC1263D ±2% K 126 VA13A ±2% K 1 VA13D ±2% K 1 VC425X ±2% M 42 VC635A ±2% K 63 VC855A ±2% K 85 VC855C ±2% K 85 VC1265A ±2% K 126 VC1265D ±2% K 126 VA15A ±2% K 1 VA15D ±2% K 1 VC429X ±15% M 42 VC639A ±15% K 63 VC859A ±15% K 85 VC8512A ±15% K 85 VC4214X ±12% M 42 VC6314A ±12% K 63 VC8514A ±12% K 85 VC8514C ±12% K 85 VC12614A ±12% K 126 VC12614D ±12% K 126 VA114A ±12% K 1 VA114D ±12% K 1 VC13MA16KBA ±1% K 121 VC4218X ±1% M 42 VC6318A ±1% K 63 VC8518A ±1% K 85 VC8518C ±1% K 85 VC1 2618A ±1% K 126 VC12618D ±1% K 126 VC12618E ±1% K 126 VC12118J ±1% K 121 VJ13MC18KBA ±1% K 121 VA118A ±1% K 1 Termination/Lead Finish Code Packaging Code 3

6 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors ELECTRICAL CHARACTERISTICS AVX Working Working Breakdown Clamping Test Maximum Transient Peak Typical Frequency Case Part Number Voltage Voltage Voltage Voltage Current Leakage Energy Current Cap Size (DC) (AC) For VC Current Rating Rating VA118D ±1% K 1 VC6326A ±1% K 63 VC8526A ±1% K 85 VC8526C ±1% K 85 VC12626D ±1% K 126 VC12626F ±1% K 126 VC12126H ±1% K 121 VJ13MC26KBA ±1% K 121 VC181226P ±1% K 1812 VA126D ±1% K 1 VC633A ±1% K 63 VC853A ±1% M 85 VC1263D ±1% K 126 VC1213G ±1% K 121 VC1213H ±1% K 121 VJ13MC3KBA ±1% K 121 VJ13PC3KBA ±1% K 121 VA13D ±1% K 1 VC12631M ±1% K 126 VC12638N ±1% K 126 VC12138S ±1% K 121 VC181238U ±1% K 1812 VC12645K ±1% K 126 VC181245U ±1% K 1812 VC12648D ±1% K 126 VC12148G ±1% K 121 VC12148H ±1% K 121 VJ13MC48KBA ±1% K 121 VJ13PC48KBA ±1% K 121 VA148D ±1% K 1 VC12656F ±1% K 126 VC181256U ±1% K 1812 VC1216J ±1% K 121 VJ13MC6KBA ±1% K 121 VA26K ±1% K 2 VC12665L ±1% K 126 VC12185S ±1% K 121 Termination/Lead Finish Code Packaging Code V W (DC) DC Working Voltage (V) V W (AC) AC Working Voltage (V) V B Typical Breakdown Voltage 1mA DC ) V B Tol V B Tolerance is ± from Typical Value V C Clamping Voltage I VC ) I VC I L E T I P Test Current for V C (A, 8x2μS) Maximum Leakage Current at the Working Voltage (μa) Transient Energy Rating (J, 1x1μS) Peak Current Rating (A, 8x2μS) Typical Capacitance frequency specified and.5 VRMS Frequency at which capacitance is measured (K = 1kHz, M = 1MHz) Cap Freq 4

7 Dimensions Dimensions: Millimeters (Inches) D Max..51 ±.5 (.2" ±.2") L Max (1.") Min. Lead Length DIMENSIONS: mm (inches) (L) Max Length AVX Style VA1 VA2 (D) Max Diameter Lead Finish: Copper Clad Steel, Solder Coated mm (in.) (.17) (.19) mm (in.) (.1) (.14) L W T t DIMENSIONS: mm (inches) (L) Length (W) Width AVX Style (T) Max Thickness (t) Land Length mm 1.±.1 1.6± ±.2 3.2±.2 3.2±.2 4.5±.2 5.7±.2 (in.) (.4±.4) (.63±.6) (.79±.8) (.126±.8) (.126±.8) (.177±.8) (.224±.8) mm.5±.1.8± ±.2 1.6± ±.2 3.2±.2 5.±.2 (in.) (.2±.4) (.31±.6) (.49±.8) (.63±.8) (.98±.8) (.126±.8) (.197±.8) mm (in.) (.24) (.35) (.4) (.4) (.67) (.67) (.67) mm.25±.15.35± max..94 max max..5±.25.5±.25 (in.) (.1±.6) (.14±.6) (.28 max.) (.37 max.) (.45 max.) (.2±.1) (.2±.1) 5

8 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors TYPICAL PERFORMANCE CURVES (42 CHIP SIZE) VOLTAGE/CURRENT CHARACTERISTICS Multilayer construction and improved grain structure result in excellent transient clamping characteristics up to 2 amps peak current, while maintaining very low leakage currents under DC operating conditions. The VI curves below show the voltage/current characteristics for the 5.6V, 9V, 14V, 18V and low capacitance StaticGuard parts with currents ranging from parts of a micro amp to tens of amps. Voltage (V) VC4LC18V5 VC4218X4 VC4214X3 VC429X2 VC425X15 PULSE DEGRADATION Traditionally varistors have suffered degradation of electrical performance with repeated high current pulses resulting in decreased breakdown voltage and increased leakage current. It has been suggested that irregular intergranular boundaries and bulk material result in restricted current paths and other non-schottky barrier paralleled conduction paths in the ceramic. Repeated pulsing of TransGuard transient voltage suppressors with 15Amp peak 8 x 2μS waveforms shows negligible degradation in breakdown voltage and minimal increases in leakage current. This does not mean that TransGuard suppressors do not suffer degradation, but it occurs at much higher current. ESD TEST OF 42 PARTS 35 3 VC4LC18V Current (A) PEAK POWER VS PULSE DURATION BREAKDOWN VOLTAGE (Vb) VC4218X4 VC4214X3 VC429X2 VC425X15 PEAK POWER (W) VC4218X4 VC4214X3 VC429X2 VC4LC18V5 VC425X kV ESD STRIKES INSERTION LOSS CHARACTERISTICS db VC4LC18V VC4218X -15 VC4214X VC429X VC425X IMPULSE DURATION (μs) Frequency (GHz) 6

9 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors TYPICAL PERFORMANCE CURVES (63, 85, 126 & 121 CHIP SIZES) VOLTAGE/CURRENT CHARACTERISTICS Multilayer construction and improved grain structure result in excellent transient clamping characteristics up to 5 amps peak current, depending on case size and energy rating, while maintaining very low leakage currents under DC operating conditions. The VI curve below shows the voltage/current characteristics for the 3.3V, 5.6V, 12V, 14V, 18V, 26V, 3V, 48V and 6VDC parts with currents ranging from parts of a micro amp to tens of amps. 25 VI Curves - 3.3V and 5.6V Products 2 Voltage (V) VI Curves - 9V, 12V, and 14V Products Current (A) 4 3.3V,.1J 3.3V, >.1J 5.6V,.1J 5.6V, >.1J Voltage (V) VI Curves - 18V and 26V Products Current (A) 9V,.1J 12V,.1J 14V,.1J 14V, >.1J Voltage (V) VI Curves - 3V, 48V, and 6V Products Current (A) 15 18V,.1J 18V, >.1J 26V,.1J 26V, >.1J Voltage (V) 1 2 VI Curve - 85V Product Voltage (V) 12 8 Current (A) 3V,.1J 3V, >.1J 48V 6V 4 1.E-9 1.E-6 1.E-3 1.E+ 1.E+3 Current (A) 7

10 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors TYPICAL PERFORMANCE CURVES (63, 85, 126 & 121 CHIP SIZES) 3.3V 8

11 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors TYPICAL PERFORMANCE CURVES (63, 85, 126 & 121 CHIP SIZES) TEMPERATURE CHARACTERISTICS TransGuard suppressors are designed to operate over the full temperature range from -55 C to +125 C. This operating temperature range is for both surface mount and axial leaded products. Voltage as a Percent of Average Breakdown Voltage Temperature Dependence of Voltage Current (A) -4 C 25 C 85 C 125 C Energy Derating TYPICAL ENERGY DERATING VS TEMPERATURE Typical Breakdown (V B ) and Clamping (V C ) Voltages TYPICAL BREAKDOWN AND CLAMPING VOLTAGES VS TEMPERATURE - 5.6V 5.6V o Temperature ( C) VC V B o Temperature ( C) Typical Breakdown (V B ) and Clamping (V C ) Voltages Typical Breakdown (V B ) and Clamping (V C ) Voltages TYPICAL BREAKDOWN AND CLAMPING VOLTAGES VS TEMPERATURE - 18V 18V ( VC ) ( V B ) o Temperature ( C) TYPICAL BREAKDOWN AND CLAMPING VOLTAGES VS TEMPERATURE - 26V 26V ( V ) C ( V B ) Temperature ( C) Capacitance Relative to 25 C TYPICAL CAPACITANCE VS TEMPERATURE 25 C Reference Average Temperature ( C) 9

12 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors TYPICAL PERFORMANCE CURVES (63, 85, 126 & 121 CHIP SIZES) PULSE DEGRADATION Traditionally varistors have suffered degradation of electrical performance with repeated high current pulses resulting in decreased breakdown voltage and increased leakage current. It has been suggested that irregular intergranular boundaries and bulk material result in restricted current paths and other non-schottky barrier paralleled conduction paths in the ceramic. Repeated pulsing of both 5.6 and 14V TransGuard transient voltage suppressors with 15 Amp peak 8 x 2μS waveforms shows negligible degradation in breakdown voltage and minimal increases in leakage current. This does not mean that TransGuard suppressors do not suffer degradation, but it occurs at much higher current. The plots of typical breakdown voltage vs number of 15A pulses are shown below. Change in Breakdown Voltage (%) Change in Breakdown Voltage (%) 1% 8% 6% 4% 2% % Number of Strikes Figure 1 VC12618D4 VC12626D58 VC12614D3 VC1265D15 Repetitive Peak Current Strikes TransGuard 85.1J and.3j Products 15% 1% 5% % Repetitive Peak Current Strikes TransGuard 126.4J Product Number of Strikes Figure 2 VC8518A4 VC8518C4 Change in Breakdown Voltage (%) Change in Breakdown Voltage (%) Repetitive Peak Current Strikes TransGuard J Product 1% 8% 6% 4% 2% % 3% 25% 2% 15% 1% 5% % VC12118J Number of Strikes Figure 3 Repetitive Peak Current Strikes StaticGuard 85.1J Product VC8LC18A Number of Strikes Figure 4 CAPACITANCE/FREQUENCY CHARACTERISTICS TransGuard Capacitance vs Frequency 63 TransGuard Capacitance vs Frequency 85 TransGuard Capacitance vs Frequency Capacitance Change (%) VC635A15 VC6LC18X5 VC6326A Frequency (MHz) Capacitance Change (%) VC855C15 2 VC8518C4 VC8514A Frequency (MHz) Capacitance Change (%) VC12614D3 VC12648D11 VC12LC18A Frequency (MHz) 1

13 TransGuard Automotive Series Multilayer Varistors for Automotive Applications GENERAL DESCRIPTION The TransGuard Automotive Series are zinc oxide (ZnO) based ceramic semiconductor devices with non-linear, bi-directional voltage-current characteristics. They have the advantage of offering bi-directional overvoltage protection as well as EMI/RFI attenuation in a single SMT package. The Automotive Series high current and high energy handling capability make them well suited for protection against automotive related transients. FEATURES High Reliability High Energy Absorption (Load Dump) High Current Handling AEC Q2 Qualified Bi-Directional protection EMI/RFI attenuation Multi-strike capability Sub 1nS response to ESD strike APPLICATIONS Internal Combustion Engine (ICE) Vehicles Hybrid Electric Vehicles (HEV) Plug-in Hybrid Electric Vehicles (PHEV) Commercial Vehicles CAN, LIN, FLEXRAY based modules Sensors Module load dump protection Motor/inductive load transient suppression HOW TO ORDER VC AS D 4 R P Varistor Chip Automotive Series *Not available for 42 **Only available for 42 Case Size Working Voltage 16 = 16Vdc 18 = 18Vdc 26 = 26Vdc 3 = 3Vdc 38 = 38Vdc 42 = 42Vdc 48 = 48Vdc 56 = 56Vdc 85 = 85Vdc Energy Rating A =.1J B =.2J C =.3J D =.4J E =.5J F =.7J H = 1.2J J = 1.5J K =.6J L =.8J S = J Clamping Voltage 38 = 38V 39 = 42V 4 = 42V 58 = 6V 62 = 67V 65 = 67V 77 = 77V 8 = 8V 11 = 1V 111 = 11V 151 = 15V Package D = 7" (1)* R = 7" (4)* T = 13" (1,)* W = 13" (1,)** 42 only Termination P = Ni/Sn plated PHYSICAL DIMENSIONS: mm (inches) Size (EIA) Length (L) Width (W) Max Thickness (T) Land Length (t) T 42 1.±.1.5± ±.15 (.4±.4) (.2±.4) (.24) (.1±.6) t t ±.15.8± ±.15 (.63±.6) (.31±.6) (.35) (.14±.6) W ± ± max. (.79±.8) (.49±.8) (.4) (.28 max.) 3.2±.2 1.6± max. (.126±.8) (.63±.8) (.4) (.37 max.) L ± ± max. (.126±.8) (.98±.8) (.67) (.45 max.) 11

14 TransGuard Automotive Series Multilayer Varistors for Automotive Applications ELECTRICAL CHARACTERISTICS AVX Part Number Working Working Test Maximum Typical Voltage Voltage V B V C Current I E T I P L Cap (DC) (AC) for V C Freq V Jump P Diss. Max VCAS6316B ±1% K VCAS12616K ±1% K VCAS12116J ±1% K VCAS4218X ±1% M VCAS6318A ±1% K VCAS8518A ±1% K VCAS8518C ±1% K VCAS12618A ±1% K VCAS12618D ±1% K VCAS12618E ±1% K VCAS12118J ±1% K VCAS6326A ±1% K VCAS8526A ±1% K VCAS8526C ±1% K VCAS12626D ±1% K VCAS12126H ±1% K VCAS633A ±1% K VCAS853A ±1% M VCAS853C ±1% K VCAS1263D ±1% K VCAS1213H ±1% K VCAS8538C ±1% K VCAS12642L ±1% K VCAS12648D ±1% K VCAS12148H ±1% K VCAS12656F ±1% K VCAS12185S ±1% K V W (DC) DC Working Voltage [V] V W (AC) AC Working Voltage [V] V B Typical Breakdown Votage 1mA DC ] V C Clamping Voltage I IV ] I VC I L E t I P Cap V Jump P DISS Test Current for V C Maximum leakage current at the working voltage [μa] Transient Energy Rating [J, 1x1μS] Peak Current Rating [A, 8x2μS] Typical capacitance frequency specified and.5v RMS Jump Start (V) Power Dissipation (W) 12

15 TransGuard Automotive Series Multilayer Varistors for Automotive Applications AUTOMOTIVE SERIES LOAD DUMP TEST According to ISO DP7637 rev 2 Pulse 5 Automotive Load Dump Pulse (According to ISO 7637 Pulse 5) Voltage (V) Energy (Joules) When using the test method indicated below, the amount of Energy dissipated by the varistor must not exceed the Load Dump Energy value specified in the product table. Time (msec) CONSUMER VEHICLE TESTING (12V Network) AVX Working Working Transient Load Dump Typical Vz Max Versus Pulse Part Number Voltage Voltage Energy Energy Duration and Rs (DC) (AC) 1 x 1 us (x1).5 Ohm 4 Ohm (Joules) Joules 1 ms 1 ms VCAS6316B VCAS12616K VCAS12116J VCSA4218X VCAS6318A VCAS8518A VCAS8518C VCAS12618A VCAS12618D VCAS12618E VCAS12118J COMMERCIAL VEHICLE TESTING (24V Network) AVX Working Working Transient Load Dump Typical Vz Max Versus Pulse Part Number Voltage Voltage Energy Energy Duration and Rs (DC) (AC) 1 x 1 us (x1) 1 Ohm 8 Ohm (Joules) Joules 1 ms 1 ms VCAS6326A VCAS8526A VCAS8526C VCAS12626D VCAS12126H VCAS633A VCAS853A VCAS853C VCAS1263D VCAS1213H

16 TransGuard Automotive Series Multilayer Varistors for Automotive Applications FORWARD TRANSMISSION CHARACTERISTICS (S21) Case Size Insertion Los (db) A - 73 MHz 26A - 55 MHz 3A MHz Frequency (MHz) Insertion Los (db) C - 3 MHz 26A MHz 26C - 46 MHz 3A - 53 MHz 3C - 39 MHz 38C - 43 MHz 1 85 Case Size Frequency (MHz) 14

17 TransGuard Automotive Series Multilayer Varistors for Automotive Applications FORWARD TRANSMISSION CHARACTERISTICS (S21) 126 Case Size -1 Insertion Los (db) D - 18 MHz 18E - 78 MHz 26D - 26 MHz 26F - 21 MHz 3D 125 MHz 42L - 95 MHz 48D MHz 56F - 29 MHz Frequency (MHz) 121 Case Size -1 Insertion Los (db) J - 1 MHz 3H - 14 MHz 48H MHz Frequency (MHz) 15

18 TransGuard Automotive Series Multilayer Varistors for Automotive Applications V-I CHARACTERISTICS 63 Case Size A 26A 3A 6 Voltage (V) E-9 1.E-6 1.E-3 1.E+ 1.E+3 Current (A) Case Size Voltage (V) C 26C 3C 38C 2 1.E-9 1.E-6 1.E-3 1.E+ 1.E+3 Current (A) 16

19 TransGuard Automotive Series Multilayer Varistors for Automotive Applications V-I CHARACTERISTICS Case Size Voltage (V) E 26D 3D 42L 48D 56F E-9 1.E-6 1.E-3 1.E+ 1.E+3 Current (A) 121 Case Size Voltage (V) J 3H 48H 6J 85S 1.E-9 1.E-6 1.E-3 1.E+ 1.E+3 Current (A) 17

20 TransGuard Automotive Series Multilayer Varistors for Automotive Applications ESD V-I CHARACTERISTICS 8 kv ESD Vc (15pF/3ohm IEC Network) 2 No Part 8k V 12618A D4 Voltage (V) E D F D F Time (nsec) TYPICAL VOLTAGE AT 8 KV PULSE 8kV Pulse Peak Voltage (V) 3ns Voltage (V) 1ns Voltage (V) No Part (No Suppression) A D E D F D F ESD 8 kv IEC pF / 33Ω Resistor VC6318A4 28. Breakdown Voltage Initial # Pulses 18

21 Miniature AC Varistor MAV Low Power AC Circuit Protection GENERAL DESCRIPTION AVX Miniature AC Varistors are designed for use in low power AC circuit protection. MAV series devices are an ideal solution to transient suppression in LC resonant circuits intended for signal & power transfer. The AVX part provides low loss in the resonant circuit yet is able to clamp large amounts of transients in a bi-directional manner. The ability to handle large transients makes the MAV series useful in low power AC circuit protection and the AEC Q2 qualification allows for use in automotive applications. FEATURES kHz capability AEC Q2 qualified ESD rated to 25kV (HBM ESD Level 6) EMI/RFI attenuation in off state Bi-Directional protection APPLICATIONS LC resonant circuits AC sampling circuitry Transformer secondaries GFI modules HOW TO ORDER MAV 2 W P Series Size 1 = 63 2 = 45 4 = 42 Capacitance = Low Packaging Termination D = 7" reel (1, pcs) P = Plated Sn over Ni barrier R = 7" reel (4, pcs) T = 13" reel (1, pcs) W = 7" Reel (1, pcs 42 and 21 only) ANTENNAGUARD CATALOG PART NUMBERS/ELECTRICAL VALUES AVX Part Number V W (DC) V W (AC) V B V C I VC E T I P I L Cap Elements MAV1_P ±15% pF Max 1 MAV2_P ±15% pF Max 2 MAV4_P ± 15% pF Max 1 Packaging Code V W (DC) DC Working Voltage [V] V W (AC) AC Working Voltage [V] V B Breakdown Voltage 1mA DC ] V C Clamping Voltage I VC ] I L E T I P Cap Maximum leakage current at the working voltage [μa] Transient Energy Rating [J, 1x1μS] Peak Current Rating [A, 8x1μS] Maximum 1MHz and.5v RMS 19

22 Miniature AC Varistor MAV Low Power AC Circuit Protection TYPICAL PERFORMANCE CURVES Voltage/Current Characteristics Transmission Characteristics E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1 1E+2 1E+3 Current MAV1 MAV2 MAV4 Frequency (MHz) MAV1 MAV2 MAV4 TYPICAL PERFORMANCE CURVES Impact of AC Voltage on Breakdown Voltage Parallel 125 khz + Vb Change - Vb Change Breakdown Voltage 1.% 7.5% 5.% 2.5%.% -2.5% -5.% -7.5% -1.% 1 min 6 min 12 min 1 min 6 min 12 min Max.3%.6%.4%.3%.5%.3% Min.2%.2%.2%.2%.1%.% Average.3%.3%.3%.2%.2%.2% Apply 11V pp 125KHz Sine wave (Parallel) Impact of AC Voltage on Breakdown Voltage Series 125 khz + Vb Chan ge - Vb Chan ge Breakdown Voltage 1.% 7.5% 5.% 2.5%.% -2.5% -5.% -7.5% -1.% Max Min Average 1 min 6 min 12 min 1 min 6 min 12 min.3%.3%.3%.3%.3%.3%.2%.2%.2% -.2%.2%.2%.3%.3%.3%.2%.3%.2% Apply 11V pp 125KHz Sine wave (Series) 2

23 Miniature AC Varistor MAV Low Power AC Circuit Protection IMPACT OF AC VOLTAGE ON LEAKAGE CURRENT % Average Change in Leakage Current Temperature (ºC) 12 V Peak to Peak 165 V Peak to Peak PHYSICAL DIMENSIONS AND RECOMMENDED PAD LAYOUT T D W P E W A D BL L C B BW T C B A BL L L W T BW BL P A B C D E MAV1 1.6 ±.15.8 ±.15.9 Max N/A.35 ±.15 N/A N/A (.63±.6) (.32±.6) (.35) Max (.14±.6) (.35) (.3) (.1) (.3) MAV2 1. ± ± Max.36 ±.1.2 ±.1.64 REF (.39±.6) (.54±.6) (.26) Max (.14±.4) (.8±.4) (.25)REF (.18) (.29) (.47) (.12) (.25) MAV4 1.±.1.5±.1.6 Max.25± N/A N/A (.4±.4) (.2±.4) (.24) Max (.1±.6) (.24) (.2) (.67) (.2) N/A 21

24 Radial Leaded High Temperature Automotive 15ºC Rated Radial Leaded TransGuard GENERAL DESCRIPTION AVX High Temperature Multi-Layer Varistors are designed for underhood applications. Products have been tested, qualified, and specified to 15ºC. The Radial Leaded TransGuard is built for durability in harsh environments. The MLV advantage is EMI/RFI attenuation in the off state. This allows designers to combine the circuit protection and EMI/RFI attenuation function into a single highly reliable device. FEATURES Rated at 15ºC AEC Q2 qualified ESD rated to 25kV (HBM ESD Level 6) EMI/RFI attenuation in off state Excellent current and energy handling APPLICATIONS Under hood Down Hole Drilling Any high temperature application HOW TO ORDER VR15 AT 18 A 65 R TR2 AVX Style Series AT = 15ºC Automotive Voltage 18 = 18V Energy A =.1J Clamping Voltage 65 = 67V Leads R = RoHS Compliant Packaging TR2 - T&R Standard 2 AVX Part Number VW (DC) VW (AC) Jump VB VC ET IP IL Cap Start VR15AT18A65R ± 1% V W (DC) DC Working Voltage [V] I L Maximum leakage current at the working voltage [µa] V W (AC) AC Working Voltage [V] E T Transient Energy Rating [J, 1x1µS] V B Breakdown Votage 1mA DC ] I P Peak Current Rating [A, 8x2µS] V C Clamping Votage 1A] Cap Capacitance 1KHz specified and.5v RMS Jump Start Max V PHYSICAL DIMENSIONS.17 (4.32) Max. TAPE & REEL PACKAGING OPTIONS TR1 Tape & Reel Standard 1 TR2 Tape & Reel Standard 2.6 (1.52) Max..15 (3.81) Max. 1. (25.4) Min..63 (16.) Min..478 (19.) Min..1 (2.54)±.3 Width Height Thickness Lead Spacing mm (inches) Lead Diameter 4.32 Max (.17) (.15) (.1) (.1) (.2) 22

25 Radial Leaded High Temperature Automotive 15ºC Rated Radial Leaded TransGuard 12 TYPICAL PERFORMANCE CURVES Voltage/Current Characteristics 1 Voltage (V) E-8 1.E-7 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 Current (A) AEC-Q2-2 ESD Characteristics 1% % Vb Change 5% % -5% -1% kv Pulse ESD Wave Absorption Characteristics 25 2 No Part 8kV VR15AT18A65R VOLTA GE (V) TIME (nsec) 8 kv ESD Vc (15pF/33ohm IEC Network) 23

26 Controlled Capacitance Multilayer Varistor GENERAL DESCRIPTION The Controlled Capacitance TransGuard is an application specific bi-directional transient voltage suppressor developed for use in mixed signal environments. The Controlled Cap MLV has three purposes: 1) reduce emissions from a high speed ASIC, 2) prevent induced E fields from conducting into the IC, and 3) clamp transient voltages By controlling capacitance of the MLV, the center frequency and 2db range for filtering purposes can be targeted. A Controlled Cap MLV can greatly improve overall system EMC performance and reduce system size. LEAD-FREE COMPATIBLE COMPONENT HOW TO ORDER VCAC A 47 N R P Varistor Chip Automotive Capacitance Chip Size 63 Working Voltage 22 = 22V 26 = 26V Energy Rating A =.1J C =.3J Capacitance 47 = 47pF 82 = 82pF Tolerance N = ±3% M = ±2% Packaging R = 4k pcs Termination P = Ni Barrier/ 1% Sn (matte) AVX Part Number VW (DC) VW (AC) VB VC IL ET IP Cap Cap Case Tolerance Size VCAC6322A47NRP ±25% % 63 VCAC6326C82MRP ±15% % 63 V W (DC) DC Working Voltage [V] I L Maximum leakage current at the working voltage [µa] V W (AC) AC Working Voltage [V] E T Transient Energy Rating [J, 1x1µS] V B Breakdown Votage 1mA DC ] I P Peak Current Rating [A, 8x2µS] V C Clamping Votage 1A] Cap Capacitance 1KHz specified and.5v RMS T W 63 Discrete Dimensions mm (inches) L W T BW BL BL L 1.6±.15.8±.15.9 MAX.35±.15 N/A (.63±.6) (.31±.6) (.35 MAX) (.14±.6) 24

27 Controlled Capacitance Multilayer Varistor V-I Curve Volt (V) E-9 1.E-7 1.E-5 1.E-3 1.E-1 1.E+1 1.E+3 Current (A) VCAC6322A47N VCAC6326C82M S Insertion Loss (db) Frequency (MHz) VCAC6322A47N VCAC6326C82M 25

28 Miniature 21 MLV AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for any Circuit with Board Space Constraints GENERAL DESCRIPTION AVX 21 Multi-Layer Varistors are designed for circuits where board space is a premium. 21 MLV offer bi-directional ESD protection in the smallest package available today. The added advantage is EMI/RFI attenuation. 21 MLV can replace 2 diodes and the EMC capacitor for a one chip solution. The miniature size and one chip solution team to offer designers the best in ESD protection and EMI filtering in one ultra compact device. APPLICATIONS Cell phone PDA Camera modules Embedded components Hearing aid Any circuit with space constraints FEATURES Capacitance 15pF to 15pF Low V B Version Bi-Directional protection Fastest response time to ESD strikes Multi-strike capability Ultra compact 21 case size LEAD-FREE COMPATIBLE COMPONENT MultiLayer Varistors (MLVs) XCVR BUS XCVR TVS Dodes BUS EMC CAP HOW TO ORDER VC 21 3 MLV PROTECTION METHOD SINGLE COMPONENT SOLUTION TVS & EMI V 151 DIODE PROTECTION METHOD THREE COMPONENT SOLUTION TVS + EMI W P Varistor Chip Chip Size 21 Working Voltage 3 = 3.5V Energy Rating V =.2J Capacitance 151 = 15pF Packaging W = 7" 1kpcs Termination P = Ni Barrier/ 1% Sn (matte) V W (DC) DC Working Voltage [V] I L Maximum leakage current at the working voltage [µa] V W (AC) AC Working Voltage [V] E T Transient Energy Rating [J, 1x1µS] V B Breakdown Votage 1mADC] I P Peak Current Rating [A, 8x2µS] V C Clamping Votage IVC] Cap Capacitance 1KHz specified and.5vrms I VC Test Current for VC [A, 8x2µS] 26 AVX Part Number V W (DC) V W (AC) V B V C I VC I L E T I P Cap VC213V11WP min 8.84 max 14max pF ±3% VC213V121WP min 8.84 max 14max pF ±3% VC213V151WP min 8.84 max 14max pF ±3% VC215T15WP min 15.6 max 35max pF ±3% VC215T33WP min 15.6 max 35max pF ±3% VC215T5WP min 15.6 max 35max pF ±3% VC215T11WP min 15.6 max 35max pF ±3% VC215V11WP min 9.6 max 17max pF ±3% VC217V11WP min 14.4 max 2max pF ±3% VC2116T15WP min 29.3 max 45max pF ±3%

29 Miniature 21 MLV AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for any Circuit with Board Space Constraints PHYSICAL DIMENSIONS: mm (inches) T t t Size (EIA) Lenght (L) Width (W) Max Thickness (T) Terminal (t) W 21.6±.3.3±.3.33 max..15±.5 (.24±.1) (.11±.1) (.13 max.) (.6±.2) L VOLTAGE/CURRENT CHARACTERISTICS 5. TRANSMISSION CHARACTERISTICS 5.6Vdc Votage (V) Insertion Loss (db) E-9 1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+ 1E+1-45 Current (A) V 3.5 V 5.6 V 7 V Frequency (MHz) TYPLICAL 8 KV ESD PERFORMANCE (15pF / 3ohm IEC Network) 15 pf 33 pf 5 pf 1 pf 3.5Vdc 3-5 Vb Insertion Loss (db) # Pulses Frequency (MHz) 15 pf 33 pf 5 pf 1 pf 125 pf 15 pf 8kV CONTACT ESD vs PULSE 1 Mohm Input (15pF / 33ohm Network) Voltage (V) Time (n sec) 16 V 3.5 V 5.6 V 7 V Insertion Loss (db) Frequency (MHz) 27

30 High Temperature Automotive 15ºC Rated Varistors GENERAL DESCRIPTION AVX High Temperature Multi-Layer Varistors are designed for underhood applications. Products have been tested, qualified, and specified to 15ºC. The MLV advantage is EMI/RFI attenuation in the off state. This allows designers the ability to combine the circuit protection and EMI/RFI attenuation function into a single highly reliable device. LEAD-FREE COMPATIBLE COMPONENT FEATURES Rated at 15 C AEC Q2 qualified ESD rating to 25kV contact EMI/RFI attenuation in off state Excellent current and energy handling APPLICATIONS Under hood Down Hole Drilling Any high temperature application CAN SERIES HOW TO ORDER CAN AT 1 R P Type Controlled Area Network Varistor Series Automotive High Temperature Case Size 1 = 63 2 = 45 2-Element 4 = Element Packaging D = 7 (1 pcs) R = 7 (4, pcs) T = 13 (1,pcs) Termination P = Ni Barrier/ 1% Sn (matte) AVX Part Number V W (DC) V W (AC) V B I L E T I P Cap Case Size Elements CANAT CANAT CANAT V W (DC) DC Working Voltage [V] I L Maximum leakage current at the working voltage [µa] V W (AC) AC Working Voltage [V] E T Transient Energy Rating [J, 1x1µS] V B Breakdown Votage 1mA DC ] I P Peak Current Rating [A, 8x2µS] V C Clamping Votage IVC] Cap Capacitance 1KHz specified and.5vrms ANTENNAGUARD SERIES HOW TO ORDER VCAT 6 AG Y A T 1 A Type High Temperature Varistor Case Size 4 = 42 6 = 63 Varistor Series AntennaGuard Working Voltage 18 = 18Vdc Cap Non-Std. Cap Tolerance N/A Termination Finish P = Ni Barrier/ 1% Sn Reel Size 1 = 7" 3 = 13" Reel Quantity A = 4 or 1, AVX Part Number V W (DC) V W (AC) I L Cap Cap Tolerance Case Size VCAT6AG1812YAT , -2pF 63 V W (DC) DC Working Voltage [V] I L Maximum leakage current at the working voltage [µa] V W (AC) AC Working Voltage [V] Cap Capacitance 1KHz specified and.5vrms 28

31 High Temperature Automotive 15ºC Rated Varistors PHYSICAL DIMENSIONS T W P W P W T T BL L BW BW BL L BL L 63 Discrete Dimensions mm (inches) L W T BW BL P 1.6±.15.8±.15.9 MAX.35±.15 N/A (.63±.6) (.32±.6) (.35 MAX) (.14±.6) 45 2 Elements Array Dimensions mm (inches) L W T BW BL P 1.± ± MAX.36±.1.2±.1.64 REF (.39±.6) (.54±.6) (.26 MAX) (.14±.4) (.8±.4) (.25 REF) Elements Array Dimensions mm (inches) L W T BW BL P 1.6±.2 3.2± MAX.41± REF (.63±.8) (.126±.8) (.48 MAX) (.16±.4) +.1 (.8 -.3) (.3 REF) N/A 29

32 Glass Encapsulated SMD Varistor MLV (VJ12, 2, 13, 14, 15, 32) Transient Voltage Suppression, ESD Protection Devices & EMI Devices GENERAL DESCRIPTION AVX s Professional Multilayer Varistors include 3 series of glass coated products as listed below: Standard M Series Telecom MT Series Automotive MA/PA Series The glass encapsulation process ensures high insulation resistance values after reflow soldering and excellent SMT compatibility. This protection ensures reliability and acid-resistance against harsh environment like chlorite flux. LEAD-FREE COMPATIBLE COMPONENT TYPICAL APPLICATIONS Mainly used to reduce transient over-voltages in a very wide range of electronic products. Some example applications are: 1) Telecom, 2) Automotive, 3) Consumer Electronics, and 4) Industrial Applications. PHYSICAL CHARACTERISTICS Construction Weight: <.2g 1 Zinc varistor 2 Glass lead-free encapsulation 3 Silver termination 4 Nickel barrier 5 Tin 1% PHYSICAL DIMENSIONS: mm (inches) L t W T Type IEC Size L W T Land Length t 2.1± ± max VJ12 85 (.79±.8) (.49±.6) (.51 max.) ( ) VJ2 126 VJ VJ VJ VJ ±.2 1.6± max (.126±.8) (.63±.8) (.67 max.) (.1...3) 3.2±.3 2.5± max (.126±.12) (.98±.1) (.67 max.) (.1...3) 4.5±.3 3.2±.3 2. max (.177±.12) (.126±.12) (.79 max.) ( ) 5.7±.4 5.±.4 2.5max (.224±.16) (.197±.16) (.98 max.) ( ) 8.2±.4 8.2± max (.323±.16) (.323±.16) (.98 max.) ( ) PART NUMBERING VJ 14 MT 95 K BA Varistor Termination Chip Size Series Code Operating 1mA Voltage Packaging VJ = Plated Ni/Sn1% 12 = 85 M = Industrial Voltage Tolerance BA = Tape & Reel VU = Plated Ni/SnPb 2 = 126 MT = Telecom AC or DC K = ±1% VJ12 = 4 pcs/reel VC = Hybrid AgPdPt 13 = 121 MA/PA = Automotive VJ2 = 3 pcs/reel 14 = 1812 VJ13 = 2 pcs/reel 15 = 222 VJ14 = 125 pcs/reel 32 = 322 VJ15 = 125 pcs/reel VJ32 = 1 pcs/reel 3

33 Glass Encapsulated SMD Varistor MLV (VJ12, 2, 13, 14, 15, 32) Automotive MLV Range MA and PA Series AUTOMOTIVE SERIES VJ12, 2, 13, 14, 15, 32 MA and PA SERIES FEATURES Available in case size 85, 126, 121, 1812, 222, (322 under development) Nickel and Tin (1%) plated Termination Max Energy absorption: 1.5 to 25J (5J under development) Well suited to protect against automotive related transients Load Dump capabilities: according to ISO standard DP V and 24V pulse 5 Jump start capability (12V): 24.5 V - 5mn Complying to main requirements of AECQ 2 RoHS Compliant and IMDS Registration PART NUMBERS GENERAL CHARACTERISTICS Storage Temperature: -55ºC to +15ºC Operating Temperature: -55ºC to +125ºC* * 15 C upon request APPLICATIONS Protection of various semiconductor elements from overvoltage. Absorption of switching surge and electrostatic surge for relays and motors. Protection of electronic equipment for automobiles from induced lightning surge. Part Number Case Size Working Breakdown Peak Maximum Energy Energy Jump Start T max EIA Voltage Voltage current leakage 1*1µs Load-Dump current at Vdc (x1) Vdc V(1mA) Amp. 8*2µs µa Joules Joules Vmax Thickness (5mn min.) mm (inches) *VJ12PA VJ2MA VJ2PA VJ13MA VJ13PA VJ14MA VJ14PA VJ15MA VJ15PA VJ32PA VJ15MA VJ15PA *VJ32PA * under development Hybrid termination AgPdPt upon request TEMPERATURE CHARACTERISTICS For Current, Energy and Power Percent of Rating Value Ambient Temperature ( C) IMPEDANCE CHARACTERISTICS Z (Ohms) VJ15PA16K VJ15MA16K VJ14MA16K VJ13MA16K VJ2MA16K VJ15MA34K.1 1, 1, 1, Frequency (khz) 1,, 31

34 Glass Encapsulated SMD Varistor MLV (VJ12, 2, 13, 14, 15, 32) Automotive MLV Range MA and PA Series AUTOMOTIVE SERIES VJ12, 2, 13, 14, 15, 32 MA and PA SERIES V / I CHARACTERISTICS PULSE RATING V (V) V / I Characteristics : Automotive Parts VJ2MA16K VJ13MA16K VJ14MA16K VJ14PA16K VJ15MA16K VJ15PA16K VJ15PA34K VJ32PA16K 1E I (A) % of peak current rating 1.% 1.% 1.% T Pulse Rating A% max 1 Repetition (Top) 2 Repetitions 1 Repetitions 1E2 Repetitions 1E3 Repetitions 1E4 Repetitions 1E5 Repetitions 1E6 Repetitions Infinite (bottom).1% Pulse Duration (µs) TEMPERATURE DEPENDENCE OF V/I CHARACTERISTICS V/V1mA (%) 1 VJ2MA16K V/V1mA (%) 1 VJ13MA16K -4 C +25 C +85 C +125 C -4 C +25 C +85 C +125 C 1 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 Current (A) 1 1E-6 1E-5 1E-4 1E-3 1E-2 Current (A) V/V1mA (%) 1 VJ14MA16K -4 C +25 C V/V1mA (%) 1 VJ15MA16K -4 C +25 C +85 C +125 C +85 C +125 C 1 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 Current (A) 1 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 Current (A) 32

35 Glass Encapsulated SMD Varistor MLV (VJ12, 2, 13, 14, 15, 32) Automotive MLV Range MA and PA Series AUTOMOTIVE SERIES VJ12, 2, 13, 14, 15, 32 MA and PA SERIES Voltage as a percent of breakdown voltage 1, 1 VJ14PA C +25 Cinter (%) +25 Cfinal (%) +85 C +125 C 1 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 Current (A) V/V1mA (%) 1 VJ15PA16K -4 C +25 C +85 C +125 C 1 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1 VJ15MA34K -4 C +25 C +85 C +125 C 1 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 Current (A) Change in breakdown voltage (%) PULSE DEGRADATION Repetitive Peak Current Strikes 16% 14% 12% 1% 8% 6% 4% 2% % Number of strikes 33

36 Glass Encapsulated SMD Varistor MLV (VJ12, 2, 13, 14, 15, 32) Automotive MLV Range MA and PA Series AUTOMOTIVE SERIES VJ12, 2, 13, 14, 15, 32 MA and PA SERIES AUTOMOTIVE LOAD DUMP TEST (According to ISO DP7637/2 Pulse 5) V z 9% 1% When using the test method indicated below, the amount of Energy dissipated by the varistor must not exceed the Load Dump Energy value specified in the product table. V i V Tr Td t Voltage Pulse applied to the varistor: 12V Network Vi = 13.5V Td = 1 to 35ms Ri = 2 Ohms (Internal Resistance) Vz - 7 to 2V Number of Pulses = 1 Pulses Other Load Dump Simulations can be achieved 24V Network Vi = 27V Td = 1 to 35ms Ri = 2 Ohms (Internal Resistance) Vz - 7 to 2V Number of Pulses = 1 Pulses Pulse 5: Typical Vz max versus Pulse duration and Rs VJ2MA16K.5 Ohm 1 Ohm 2 Ohms 5ms ms ms ms VJ13PA16K.5 Ohm 1 Ohm 2 Ohms 5ms ms ms ms VJ14PA16K.5 Ohm 1 Ohm 2 Ohms 5ms ms ms ms VJ15PA16K.5 Ohm 1 Ohm 2 Ohms 5ms ms ms ms VJ32PA16K.5 Ohm 1 Ohm 2 Ohms 5ms ms ms ms

37 Glass Encapsulated SMD Varistor MLV (VJ12, 2, 13, 14, 15) Industrial MLV Range M Series INDUSTRIAL MLV RANGE VJ12, 2, 13, 14, 15 M SERIES FEATURES Glass encapsulation device with very low leakage current under DC operating conditions Device available in case size 126, 121, 1812, 222 (322) Nickel and Tin (1%) plated Termination (Hybrid AgPdPt termination available upon request) Bi-Directional protection. Fast Turn-On Time. Excellent transient clamping characteristics up to 12amps peak current Multi strike capability. Provide EMC Capacitance RoHS Compliant GENERAL CHARACTERISTICS Storage Temperature: -55ºC to +15ºC Operating Temperature: -55ºC to +125ºC TYPICAL APPLICATIONS Many uses to reduce transient over-voltage in the very wide range of electronic products in the Professional, Industrial and Consumer Applications. Type Case Size Vrms VDC Max. Maximum Max. Peak Cap. Breakdown Energy Clamping Leakage Current Typical Voltage 1*1µs Voltage Current 8*2µs (1KHz/.5V) (V) (V) (V) Vp (V) lp (A) µa (J) (A) (pf) VJ2M14K ±1% VJ13M14K ±1% VJ14M14K ±1% VJ15M14K ±1% VJ2M17K ±1% VJ13M17K ±1% VJ14M17K ±1% VJ15M17K ±1% VJ2M2K ±1% VJ13M2K ±1% VJ14M2K ±1% VJ15M2K ±1% VJ2M25K ±1% VJ13M25K ±1% VJ14M25K ±1% VJ15M25K ±1% VJ2M3K ±1% VJ13M3K ±1% VJ14M3K ±1% VJ15M3K ±1% VJ2M35K ±1% VJ13M35K ±1% VJ14M35K ±1% VJ15M35K ±1% VJ2M4K ±1% VJ13M4K ±1% VJ14M4K ±1% VJ15M4K ±1% VJ2M5K ±1% VJ13M5K ±1% VJ14M5K ±1% VJ15M5K ±1% VJ2M6K ±1% VJ13M6K ±1% VJ14M6K ±1% VJ15M6K ±1%

38 Glass Encapsulated SMD Varistor MLV (VJ12, 2, 13, 14, 15) Industrial MLV Range M Series INDUSTRIAL MLV RANGE VJ12, 2, 13, 14, 15 M SERIES V/I CHARACTERISTIC 15 VI Curves 18V, 22V, and 26V Voltage (V) V, 1.6J 22V, 1.6J 26V, 1.9J 26V, 3J 1E Current (A) Voltage (V) VI Curves 31V, 38V, and 45V 31V, 1.7J 38V, 1.1J 38V, 2J 38V, 4.2J 45V, 1.5J 5 1E Current (A) 25 VI Curves 56V, 65V, and 85V Voltage (V) V 65V, 1.6J 85V, 1.5J 5 1E Current (A) 36

39 Glass Encapsulated SMD Varistor MLV (VJ14) Telecom MLV Range MT Series FEATURES Effective alternative to leaded MOVs between 6 and 9 Vrsm High Energy Ratings up to 6 Joules with 1812 case size Nickel barrier or hybrid AgPdPt terminations Multiple Strike Capability Provide EMC Capacitance Specified in accordance to CCITT 1/1μs Pulse test RoHS Compliant and IMDS Registration TELECOM MLV RANGE - VJ14 MT SERIES TARGET APPLICATIONS Phone Lines, ADSL Lines, and other Telecom Circuits Consumer Products GENERAL CHARACTERISTICS Storage Temperature: -55ºC to +125ºC Operating Temperature: -55ºC to +125ºC CCITT 1x7µs TEST A pulse of 1 x 7μs duration as specified by CCITT or IEC is often used to check the interference immunity of Telecom equipment. The curves show that the 6Vrms Varistor can reduce the interference of the equipment from 2KV to less than 2V. Voltage /7 Telecom Test Pulse Wave-Form Without Varistor (Open-circuit voltage) dv/v1ma 1% 8% 6% 4% 2% 1/7 Pulse Test Capability Typical V1mA Drift 6Vrms 95Vrms 5 With a 6Vrms Telecom Varistor (Protection level <2V) Time (ms) Ten pulses with a duration of 1x7μs applied at one minute intervals are specified for telecom equipment. The curves show the V1mA drift when more than 1 pulses are applied. % Pulses 1 PART NUMBERS Part Number Case Size Operating Voltage CCITT Mean Breakdown l max. Energy Typical Max. Clamping Voltage 1 Pulses Power Voltage 8*2µs 1*1µs Cap. 1*7µs Dissipation EIA Vac Vdc V(1mA) V Amp. Amp. Amp. Joules W pf VJ14MT VJ14MT VJ14MT Hybrid termination AgPdPt (VC Range) upon request 37

40 Glass Encapsulated SMD Varistor MLV (VC32) Single Layer SLV Range M Series GENERAL DESCRIPTION The VC32M Series offers the designer a surface mount solution with higher voltage ratings and transient energy ratings. This Single Layer Surface Mount Varistor replaces the traditional radial-lead Varistors with reduced size and weight. The glass encapsulation ensures the high performances in voltage up to 3Vrms reliability and acid-resistance against harsh environment like chlorite soldering flux. LEAD-FREE COMPATIBLE COMPONENT FEATURES Lead less surface mount chip 322 Case Size Voltage Ratings from 175Vrms to 3 Vrms VC32 with hybrid Ag-1% Terminations Operating temperature from -55 C to +125 C RoHS Compliant APPLICATIONS MOV (Radial) Replacement Suppression of transient on line voltage Electric Meters Industrial Equipment Mains PSUs Telecommunications Consumer Electronics PART NUMBERS Max. Peak Part Number Operating Voltage Pulse Max. Max. Clamping Voltage Current Energy Cap. Typical Leakage 8*2µs 8*2µs 1*1µs (1KHz/.5V) Vrms Vdc µa V A J pf VC32M175K VC32M231K VC32M251K VC32M275K VC32M31K

41 Glass Encapsulated SMD Varistor MLV (VJ13, 14, 15, 2) Surface Mounting Guide SOLDERABILITY/LEACHING SURFACE MOUNTING GUIDE (VJ13, 14, 15, 2) APPLICATIONS NOTES Terminations to be well soldered after immersion in a 6/4 tin/lead solder bath at 235±5ºC for 2±1 seconds. Terminations will resist leaching for at least the immersion times and conditions recommendations shown below. P/N Termination Type Solder Solder Immersion Tin/Lead Temp. ºC Time (sec) VC Unplated MLV Hybrid Termination 6/4 26±5 15 max Plated MLV VJ Nickel and Matte Tin 6/4 26±5 3±1 Plating Termination a) The visual standards used for evaluation of solder joints will need to be modified as lead free joints are not as bright as with tin-lead pastes and the fillet may not be as large. b) Lead-free solder pastes do not allow the same self alignment as lead containing systems. Standard mounting pads are acceptable, but machine set up may need to be modified. D2 Ceramic Unplated MLV Electrodes VC Thick Film Material Ceramic Electrodes Plated MLV VJ Solder Layer Nickel Layer Thick Film Material RECOMMENDED SOLDERING PROFILES VJ products are compatible with a wide range of soldering conditions consistent with good manufacturing practice for surface mount components. This includes Pb free reflow processes and peak temperatures up to 27ºC. Recommended profiles for reflow and wave soldering are show below for reference. VC products are recommended for lead soldering application or gluing techniques. Temperature (ºC) VJ Products Lead-Free Reflow Profile MAXIMUM TEMPERATURE 26ºC 2-4 SECONDS WITH 5ºC RAMP RATE < 3ºC/s PREHEAT ZONE 6-15 SEC > 217ºC RECOMMENDED SOLDER PAD LAYOUT REFLOW SOLDERING Case Size D1 D2 D3 D4 D (.157) 1. (.39) 2. (.79) 1. (.39) 1.6 (.42) (.157) 1. (.39) 2. (.79) 1. (.39) 2.5 (.81) (.22) 1. (.39) 3.6 (.142) 1. (.39) 3. (.118) (.26) 1. (.39) 4.6 (.181) 1. (.39) 5. (.197) (.42) 2.21 (.87) 5.79 (.228) 2.21 (.87) 5.5 (.217) WAVE SOLDERING D1 D3 D4 D5 Dimensions in mm (inches) Dimensions in mm (inches) Case Size D1 D2 D3 D4 D (.197) 1.5 (.59) 2. (.79) 1.5 (.59) 1.6 (.42) (.197) 1.5 (.59) 2. (.79) 1.5 (.59) 2.5 (.81) (.26) 1.5 (.59) 3.6 (.142) 1.5 (.59) 3. (.118) (.299) 1.5 (.59) 4.6 (.181) 1.5 (.59) 5. (.197) (.441) 1.5 (.59) 5.79 (.228) 1.5 (.59) 5.5 (.217)

42 StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems GENERAL INFORMATION Typical ESD failure voltage for CMOS and/or Bi Polar is 2V. 15kV ESD pulse (air discharge) per IEC 1-4-2, Level 4, generates < 2 millijoules of energy. StaticGuard Termination/Lead Finish Code Packaging Code Low capacitance (<2pF) is required for high-speed data transmission. Low leakage current (I L ) is necessary for battery operated equipment. AVX Working Working Clamping Test Maximum Transient Peak Typical Case Elements Part Number Voltage Voltage Voltage Current Leakage Energy Current Cap Size (DC) (AC) For VC Current Rating Rating VC4LC18V VC6LC18X VC8LC18A VC12LC18A VA1LC18A Axial 1 V W (DC) DC Working Voltage (V) V W (AC) AC Working Voltage (V) V C Clamping Voltage I VC ) I VC Test Current for V C (A, 8x2μS) I L Maximum Leakage Current at the Working Voltage (μa) E T Transient Energy Rating (J, 1x1μS) I P Peak Current Rating (A, 8x2μS) Cap Typical Capacitance frequency specified and.5 V Not RoHS Compliant LEAD-FREE COMPATIBLE COMPONENT For RoHS compliant products, please select correct termination style. PART NUMBER IDENTIFICATION Chips V C 8 LC 18 A 5 R P TERMINATION FINISH: P = Ni/Sn Alloy (Plated) PACKAGING (Pcs/Reel) CLAMPING VOLTAGE ENERGY RATING WORKING VOLTAGE (-18VDC) LOW CAPACITANCE DESIGN CASE SIZE DESIGNATOR CASE STYLE PRODUCT DESIGNATOR Axials V A 1 LC 18 A 5 R L LEAD FINISH: L = Copper Clad Steel, Solder Coated PACKAGING (Pcs/Reel) CLAMPING VOLTAGE ENERGY RATING WORKING VOLTAGE (-18VDC) LOW CAPACITANCE DESIGN CASE SIZE DESIGNATOR CASE STYLE PRODUCT DESIGNATOR 4

43 StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for CMOS, Bi Polar and SiGe Based Systems TYPICAL PERFORMANCE DATA 3% VC6LC18X5 Capacitance Histogram 5 StaticGuard ESD RESPONSE IEC (8 Kv Contact Discharge) 25% 2% 15% 1% 5% Clamping Voltage (V) VC12LC18A5 VC6LC18X5 VC8LC18A5 % Capacitance 1MHz &.5V) Measured Data Calculated Number of ESD Strikes 14% 12% 1% VC8LC18A5 Capacitance Histogram 14% 12% 1% DB -1 StaticGuard S21 VC12LC18A5 VC8LC18A5 8% 8% 6% 6% -2 VC6LC18X5 4% 2% 4% 2% -3 % % Capacitance (pf) 1MHz,.5VRMS Measured Data Calculated Distribution Frequency (MHz) 14% VC12LC18A5 Capacitance Histogram 14% 1 VI Curves - StaticGuard Products 12% 12% 8 1% 8% 6% 1% 8% 6% Voltage (V) 6 4 4% 2% 4% 2% 2 % % Capacitance (pf) 1MHz,.5VRMS Measured Data Calculated Distribution Current (A) 6LC 8LC 12LC 1LC 41

44 StaticGuard AVX Multilayer Ceramic Transient Voltage Suppressors TYPICAL PERFORMANCE CURVES (42 CHIP SIZE) VOLTAGE/CURRENT CHARACTERISTICS Multilayer construction and improved grain structure result in excellent transient clamping characteristics up to 2 amps peak current, while maintaining very low leakage currents under DC operating conditions. The VI curves below show the voltage/current characteristics for the 5.6V, 9V, 14V, 18V and low capacitance StaticGuard parts with currents ranging from parts of a micro amp to tens of amps. Voltage (V) VC4LC18V5 VC4218X4 VC4214X3 VC429X2 VC425X15 PULSE DEGRADATION Traditionally varistors have suffered degradation of electrical performance with repeated high current pulses resulting in decreased breakdown voltage and increased leakage current. It has been suggested that irregular intergranular boundaries and bulk material result in restricted current paths and other non-schottky barrier paralleled conduction paths in the ceramic. Repeated pulsing of TransGuard transient voltage suppressors with 15Amp peak 8 x 2μS waveforms shows negligible degradation in breakdown voltage and minimal increases in leakage current. This does not mean that TransGuard suppressors do not suffer degradation, but it occurs at much higher current. ESD TEST OF 42 PARTS 35 3 VC4LC18V Current (A) PEAK POWER VS PULSE DURATION BREAKDOWN VOLTAGE (Vb) VC4218X4 VC4214X3 VC429X2 VC425X15 PEAK POWER (W) VC4218X4 VC4214X3 VC429X2 VC4LC18V5 VC425X kV ESD STRIKES INSERTION LOSS CHARACTERISTICS db VC4LC18V VC4218X -15 VC4214X VC429X VC425X IMPULSE DURATION (μs) Frequency (GHz) 42

45 StaticGuard Automotive Series Multilayer Varistors for Automotive Applications GENERAL DESCRIPTION The StaticGuard Automotive Series are low capacitance versions of the TransGuard and are designed for general ESD protection of CMOS, Bi-Polar, and SiGe based systems. The low capacitance makes these products suitable for use in high speed data transmission lines. FEATURES AEC Q2 Qualified ISO 7637 Pulse 1-3 capability Meet 27.5Vdc Jump Start requirements Multi-strike capability Sub 1nS response to ESD strike HOW TO ORDER VC AS 6 LC 18 X 5 R P Varistor Chip Series AS = Automotive Case Size 4 = 42 6 = 63 8 = 85 Low Cap Design Working Voltage 18 = 18.VDC Energy Rating A =.1 Joules V =.2 Joules X =.5 Joules Clamping Voltage 15 = 18V 2 = 22V 3 = 32V 4 = 42V 5 = 5V Packaging (PCS/REEL) D = 1, R = 4, T = 1, W = 42 1 Termination P = Ni/S ELECTRIAL CHARACTERISTICS AVX Working Working Clamping Test Maximum Transient Peak Typical Case Power Part Number Voltage Voltage Voltage Current Leakage Energy Current Cap Size Dissipation (DC) (AC) For VC Current Rating Rating VCAS4LC18V VCAS6LC18X VCAS8LC18A V W (DC) DC Working Voltage (V) V W (AC) AC Working Voltage (V) V C Clamping Voltage I VC ) I VC Test Current for V C (A, 8x2μS) I L Maximum Leakage Current at the Working Voltage (μa) E T Transient Energy Rating (J, 1x1μS) I P Peak Current Rating (A, 8x2μS) Cap Typical Capacitance frequency specified and.5 V RMS 43

46 StaticGuard Automotive Series Multilayer Varistors for Automotive Applications VOLTAGE/CURRENT CHARACTERISTICS ELECTRICAL TRANSIENT CONDUCTION 44

47 StaticGuard Automotive Series Multilayer Varistors for Automotive Applications VOLTAGE/CURRENT CHARACTERISTICS VCAS4LC18V5 VCAS6LC18X5 VCAS8LC18A5 45

48 MultiGuard (2& 4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems GENERAL DESCRIPTION AND COMMENTS AVX s Transient Voltage Suppression (TVS) Arrays address six trends in today s electronic circuits: (1) mandatory ESD protection, (2) mandatory EMI control, (3) signal integrity improvement, (4) PCB downsizing, (5) reduced component placement costs, and (6) protection from induced slow speed transient voltages and currents. AVX s MultiGuard products offer numerous advantages, which include a faster turn-on-time (<1nS), repetitive strike capability, and space savings. In some cases, MultiGuard consumes less than 75% of the PCB real estate required for the equivalent number of discrete chips. This size advantage, coupled with the savings associated with placing only one chip, makes MultiGuard the TVS component of choice for ESD protection of I/O lines in portable equipment and programming ports in cellular phones. Other applications include differential data line protection, ASIC protection and LCD driver protection for portable computing devices. Where multiple lines require the ESD protection, the 4-element 612 chip is an ideal solution. The 2-element 45 MultiGuard is the smallest TVS array device available in the market today. Available with standard working voltage of 5.6V up to 18V with low capacitance in the 3 case sizes, AVX MultiGuard arrays offer a very broad range of integrated TVS solutions to the design community. SIZE: 45 SIZE: 58 SIZE: Element ELECTRICAL CHARACTERISTICS PER ELEMENT 2 Element 45 Chip 2 Element 58 Chip 4 Element 612 Chip Termination Finish Code Packaging Code 4 Element AVX Working Working Breakdown Clamping Test Maximum Transient Peak Typical Part Number Voltage Voltage Voltage Voltage Current Leakage Energy Current Cap (DC) (AC) For VC Current Rating Rating MG42S5X ±2% MG42L14V ±12% MG42L18V N/A MG52S5A ±2% MG52S9A ±15% MG52S14A ±12% MG52S18A ±1% MG52L18X N/A MG64S5A ±2% MG64S9A ±15% MG64S14A ±12% MG64S18A ±1% MG64L18X N/A V W (DC) V W (AC) V B V B Tol DC Working Voltage (V) AC Working Voltage (V) Typical Breakdown Voltage 1mA DC ) V B Tolerance is ± from Typical Value V C Clamping Voltage I VC ) I VC Test Current for V C (A, 8x2μS) I L Maximum Leakage Current at the Working Voltage (μa) E T Transient Energy Rating (J, 1x1μS) I P Peak Current Rating (A, 8x2μS) Cap Typical Capacitance 1MHz and.5 VRMS 46

49 MultiGuard (2& 4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems 2-ELEMENT MULTIGUARD W P S S PHYSICAL DIMENSIONS AND PAD LAYOUT W P S S 4-ELEMENT MULTIGUARD X P S W S X T T T BW C/L OF CHIP C L BW C/L OF CHIP C L BW C L C/L OF CHIP BL L BL L BL L SIZE: 45 SIZE: 58 SIZE: Element Dimensions mm (inches) L W T BW BL P S 1.± ± MAX.36±.1.2±.1 64 REF.32±.1 (.39±.6) (.54±.6) (.26 MAX) (.14±.4) (.8±.4) (.25 REF) (.13±.4) Element Dimensions mm (inches) L W T BW BL P X S 1.6±.2 3.2± MAX.41± REF 1.14±.1.38± (.63±.8) (.126±.8) (.48 MAX) -.8 (.16±.4) ( ) (.3 REF) (.45±.4) (.15±.4) Element Dimensions mm (inches) L W T BW BL P S 1.25±.2 2.1± MAX.41± REF.38± (.49±.8) (.79±.8) (.4 MAX) (.16±.4) ( ) (.3 REF) (.15±.4) Pad Layout Dimensions mm (inches) E Pad Layout Dimensions E mm (inches) D D A B C D E 45 2 Element (.18) (.29) (.47) (.15) (.25) C B A A B C D E Element (.35) (.65) (.1) (.18) (.3) C B A E D A B C D E 58 2 Element (.35) (.5) (.85) (.18) (.3) C B A HOW TO ORDER LEAD-FREE COMPATIBLE COMPONENT MG 4 2 L 14 A 3 T P MultiGuard Case Size 4 = 45 5 = 58 6 = 612 Configuration 2 = 2 Elements 4 = 4 Elements Style S = Standard Construction L = Low Capacitance Working Voltage 5 = 5.6VDC 9 = 9.VDC 14 = 14.VDC 18 = 18.VDC Energy Rating A =.1 Joules V =.2 Joules X =.5 Joules Clamping Voltage 15 = 18V 2 = 22V 3 = 32V 4 = 42V 5 = 5V Packaging (PCS/REEL) D = 1, R = 4, T = 1, Termination Finish P = Ni/Sn Alloy (Plated) 47

50 B MultiGuard (2 & 4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems 25 TYPICAL PERFORMANCE CURVES VOLTAGE/CURRENT CHARACTERISTICS Multilayer construction and improved grain structure result in excellent transient clamping characteristics in excess of 3 amps (2 amps on MG64L18X5) peak current while maintaining very low leakage currents under DC operating 5.6V conditions. The VI curves below show the voltage/current characteristics for the 5.6V, 9V, 14V and 18V parts with currents ranging from fractions of a micro amp to tens of amps. 5 9.V and 14.V 2 4 Voltage (V) 15 1 Voltage (V) Current (A) Current (A) MG64S5A15 MG64S9A2 MG64S14A3 1 18V 7 MG64L18X5 8 6 Voltage (V) Voltage (V) MG64S18A4 Current (A) MG64L18X5 Current (A) TYPICAL PERFORMANCE CURVES TEMPERATURE CHARACTERISTICS MultiGuard suppressors are designed to operate over the full temperature range from -55 C to +125 C. Voltage as a Percent of Average Breakdown Voltage Typical Breakdown (V ) and Clamping (V C ) Voltages TYPICAL BREAKDOWN AND CLAMPING VOLTAGES VS TEMPERATURE - 5.6V 5.6V Temperature Dependence of Voltage Current (A) -4 C 25 C 85 C 125 C o Temperature ( C) VC V B Energy Derating Typical Breakdown (V B ) and Clamping (V C ) Voltages TYPICAL ENERGY DERATING VS TEMPERATURE o Temperature ( C) TYPICAL BREAKDOWN AND CLAMPING VOLTAGES VS TEMPERATURE - 18V 18V ( VC ) ( V B ) o Temperature ( C) 48

51 MultiGuard (2 & 4 Elements) AVX Multilayer Ceramic Transient Voltage Suppression Arrays ESD Protection for CMOS and Bi Polar Systems TRANSIENT VOLTAGE SUPPRESSORS TYPICAL PERFORMANCE CURVES MG64L18X5 MG64S18A4 MG64S14A3 MG64S9A2 MG64S5A CAPACITANCE (pf) DISTRIBUTION APPLICATION Transmitter MUX BUS Receiver 14V - 18V.2J KEYBOARD CONTROLLER 74AHCT5 74AHCT5 FERRITE BEAD FERRITE BEAD DATA 14V - 18V.1J CLOCK 14V - 18V.1J 49

52 AntennaGuard 42/63 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/rf amplifier protection against ESD events is a growing concern of RF circuit designers today, given the combination of increased signal gain demands, coupled with the required downsizing of the transistor package. The ability to achieve both objectives is tied to a reduced thickness of the SiO 2 gate insulator layer within the semiconductor. The corresponding result of such a change increases the Power Amplifier s (PA s) vulnerability to ESD strikes a common event with handheld electronic products with RF transmitting and/or receiving features. AVX s 42/63 AntennaGuard products are an ultra-low capacitance extension of the proven TransGuard TVS (transient voltage suppression) line of multilayer varistors. RF designers now have a single chip option over conventional protection methods (passive filters with diode clamps), which not only gives superior performance over traditional schemes, but also provides the added benefits of reduced PCB real estate and lower installation costs. AVX s AntennaGuard products are available in capacitance ratings of 3pF (42 & 63 chips) and 12pF (63 chip). These low capacitance values have low insertion loss, as well as give other TransGuard advantages such as small size, sub-nanosecond response time, low leakage currents and unsurpassed reliability (FIT Rate of.2) compared to diodes. FEATURES Smallest TVS Component Standard EIA Chip Sizes Chip Placement Compatible Fastest Response Time to ESD Strikes Two Cap Values ( 3 and 12pF) APPLICATION ESD Protection for RF Amplifiers Laser Drivers HOW TO ORDER VC 4 AG 18 3R Y A T x x Varistor Chip Size Varistor Series Working Capacitance Non-Std. Not Termination Reel Reel Chip 4 = 42 AntennaGuard Voltage 3pF = 3R Cap Applicable T = Ni/Sn Alloy Size Quantity 6 = 63 (DC) 12pF = 12 Tolerance (Plated) 1 = 7" A = 4, (Maximum) 3 = 13" or 1, W = 7" (42 only) (i.e., 1A = 4, 3A = 1,) WA = 1, LEAD-FREE COMPATIBLE COMPONENT 5

53 AntennaGuard 42/63 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications ANTENNAGUARD CATALOG PART NUMBERS/ELECTRICAL VALUES AVX Part Number V W (DC) V W (AC) I L Cap Case Size Elements VC4AG183RYAT VC6AG183RYAT VC6AG1812YAT Termination Finish Code Packaging Code V W (DC) V W (AC) I L Cap DC Working Voltage (V) AC Working Voltage (V) Maximum Leakage Current at the Working Voltage (μa) Maximum Capacitance 1 MHz and.5 Vrms; VC6AG1812YAT capacitance tolerance: +4, -2pF PHYSICAL DIMENSIONS Length 1. (.39) ±.1 (.4) 1.6 (.63) ±.15 (.6) Width.5 (.2) ±.1 (.4).8 (.31) ±.15 (.6) Thickness.6 Max. (.24).9 Max. (.35) Termination Band Width.25 (.1) ±.15 (.6).35 (.14) ±.15 (.6) mm (inches) 51

54 AntennaGuard 42/63 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications Antenna Varistors AVX offers a series of 42 and 63 chip varistors, designated the AntennaGuard series, for RF antenna/rf amplifier protection. These devices offer ultra-low capacitance (<3pF in 42 chips, and 3pF & 12pF in 63 packages), as well as low insertion loss. Antenna varistors can replace output capacitors and provide ESD suppression in cell phones, pagers and wireless LANs. It is very common to employ some form of a FET in many types of efficient/miniature RF amplifiers. Typically, these RF transistors have nearly ideal input gate impedance and outstanding noise figures. However, FETs are very susceptible to ESD damage due to the very thin layer of SiO 2 uses as the gate insulator. The ultra-thin SiO 2 layer is required to improve the gain of the transistor. In other words, the upside of the performance enhancement becomes the downside of the transistors survival when subjected to an ESD event. ESD damage to the RF Field Effect Transistors (FETs) is a Suppression Device growing concern among RF designers due to the following trends: (1) RF amplifiers continue to shrink in size, and (2) FET gains figures continue to increase. Both trends relate to decreasing gate oxide thickness, which in turn, is directly proportional to increased ESD sensitivity. As miniaturization trends accelerate, the traditional methods to protect against ESD damage (i.e., PC board layout, passive filters, and diode clamps) are becoming less and less effective. AVX s AntennaGuard varistor can be used to protect the FET and offer superior performance to the previously mentioned protection methods given above. The standard EIA 63 chip size, and particularly the 42 chip, offer designers an ESD protection solution consistent with today s downsizing trend in portable electronic products. Savings in component volume up to 86%, and PC board footprint savings up to 83% are realistic expectations. These percentages are based upon the following table and Figures 1A and 1B. Pad Dimensions D1 D2 D3 D4 D5 mm (inches) AVX 42 TransGuard 1.7 (.67).61 (.24).51 (.2).61 (.24).51 (.2) AVX 63 TransGuard 2.54 (.1).89 (.35).76 (.3).89 (.35).76 (.3) Competitor s SOT23 Diode See Below D1 D2 D3 D4.9 (.35).96 (.37).96 (.37) 2. (.79) D5 Figure 1A. 42/63 IR Solder Pad Layout.8 (.31) mm (inch Figure 1B. SOT23- Solder Pad Layout 52

55 AntennaGuard 42/63 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications Antenna varistors offer excellent ESD repetitive strike capability compared to a SOT23 diode when subjected to IEC Kv contact discharge. A performance summary is shown in Figure 2. ESD TEST OF ANTENNAGUARD RATINGS Breakdown Voltage (Vb) 42 & 63 3pF Ratings pF 63-3pF pF , 8kV ESD Strikes Antenna varistors also turn on and divert ESD overvoltages at a much faster rate than SOT23 devices (typically 3pS vs 15pS - 5pS). See Figure 3. PEAK 1% 9% 3ns Figure 2. Repetitive 8kV ESD Strike SITVS TURN ON TIME 1.5nS to 5nS Breakdown Voltage (Vb) 63 12pF Rating ANTENNA VARISTOR S21 db VC4AG183R VC6AG183R VC6AG Frequency (GHz) Figure 5. Antenna vs Frequency Typical implementations of the antenna varistors are shown for use in cell phone, pager and wireless LAN applications in Figures 6A, 6B and 6C. 2.2pF 2.7pF Figure 6A. Cell Phone FET 6ns MLV TURN ON TIME 3pS to 7pS 1ns TIME (ns) Figure 3. Turn On Time 3ns 6ns The equivalent circuit model for a typical antenna varistor is shown in Figure 4. 12pF L n L n = BODY INDUCTANCE R V C 1 R I C 1 = DEVICE CAPACITANCE R V = VOLTAGE VARIABLE RESISTOR R I = INSULATION RESISTANCE Figure 6B. Pager Figure 4. Antenna Varistor The varistor shown exhibits a capacitance of 3pF which can be used to replace the parallel capacitance typically found prior to the antenna output of an RF amplifier. In the off state, the varistor acts as a capacitor and helps to filter RF output. The varistor is not affected by RF output power or voltage and has little insertion loss. See Figure 3. 3pF Varistor Figure 6C. FET 53

56 AntennaGuard/SPV AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for any Circuit Sensitive to Capacitance GENERAL DESCRIPTION AVX offers ultra-low capacitance ESD protection in the Sub 1pF range for use in circuits that are sensitive to capacitance. The Sub pf Varistor (SPV) is available in.8pf and.4pf capacitance values in a compact 42 low profile package. SPV devices provide excellent response time to ESD strikes to protect sensitive circuits from over voltage conditions. The development of new information processing technologies call for ever increasing digital system speeds. Higher speeds necessitate the use of ultra-low capacitance values in order to minimize signal distortion. FEATURES High Reliability Capacitance <1pF Bi-Directional protection Fastest response time to ESD strikes Multi-strike capability Low insertion loss Low profile 42 case size APPLICATIONS Antennas Optics HDMI RF circuits FlexRay Portable devices Analog sensors Any circuit sensitive to capacitance HOW TO ORDER VC H4 AG 1 R8 M A T W A Varistor Chip Size Varistor Series Working Capacitance Tolerance N/A Termination Reel Reel Chip Thin 42 AntennaGuard Voltage R8 =.8pF M = ±2% T = Ni/Sn Alloy Size Quantity 1 = 1V R4 =.47pF W = 7" A = 1k 15 = 15V ANTENNAGUARD CATALOG PART NUMBERS/ELECTRICAL VALUES AVX Part Number V W (DC) V B I L Cap Cap Tolerance 3db Freq (MHz) Case Size VCH4AG1R8MA <1 na.8 ±2% 58 LP 42 VCH4AG15R8MA <1 na.96 pf Max Max 58 LP 42 VCH4AG15R4MA <1 na.47 pf Max ±2% 67 LP 42 V W (DC) DC Working Voltage (V) V B Typical Breakdown Voltage 1mA DC ) I L Typical leakage current at the working voltage Cap Typical capacitance frequency specified and.5v RMS Freq Frequency at which capacitance is measured (M = 1MHz) LEAD-FREE COMPATIBLE COMPONENT 54

57 AntennaGuard/SPV AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for any Circuit Sensitive to Capacitance S21 Transmission Characteristics -SPV V/I Curve - SPV 5 2 Insertion Loss (db) Volt (V) Frequency (MHz) E-9 1.E-6 1.E-3 Current (A) VCH4AG15RMA-25 VCH4AG15R8MA-5 VCH4AG15R4MA-25 VCH4AG15R8MA-5 ESD Wave Absorption Characteristics 2 Std 8 kv Pulse No Part VCH4AG15R8 VCH4AG15R4 Voltage (V) Time (nsec) T t t mm (inches) W Size (EIA) 42 Length (L) 1. ±.1 (.4 ±.4) Width (W).5 ±.1 (.2 ±.4) Max Thickness (T).35 (.14) Terminal (t).25±.15 (.1±.6) L 55

58 AntennaGuard Automotive Series Multilayer Varistors for Automotive Applications GENERAL DESCRIPTION AVX 42/63 Automotive AntennaGuard products are an ultra low capacitance extension to the Automotive TransGuard Series and are intended for use in RF and other capacitance sensitive circuits. These low capacitance values have low insertion loss, low leakage current and unsurpassed reliability compared to diode options. These advantages combined with size advantages and bi-directional protection make the AntennaGuard the right choice for automotive applications including RF circuits, sensors, high-speed signal transmission lines, etc FEATURES AEC Q2 Qualified 25kV ESD rating Meet 27.5Vdc Jump Start requirements Multi-strike capability Sub 1nS response to ESD strike HOW TO ORDER VC AS 6 AG 18 3R Y A T R P Varistor Chip Series AS = Automotive Case Size 4 = 42 6 = 63 8 = 85 Type Working Voltage 18 = 18.VDC Capactance 3R = 3pF 12 = 12pF Non-Std Cap Tol Y = Max Not Applicable Termination T = Ni/Sn Plated 1 = pd/ag/pt Reel T = Ni/Sn Plated 1 = pd/ag/pt Reel A = 4K or 1K PHYSICAL DIMENSIONS: mm (inches) T W t t Size (EIA) Length (L) Width (W) Max Thickness (T) Land Length (t) 1.±.1.5± ± (.4±.4) (.2±.4) (.24) (.1±.6) ±.15.8± ±.15 (.63±.6) (.31±.6) (.35) (.14±.6) L ELECTRIAL CHARACTERISTICS AVX Working Working Maximum Cap Case Elements Jump Part Number Voltage Voltage Leakage Size Start (DC) (AC) Current VCAS4AG183RY max VCAS6AG183RY max VCAS6AG1812Y V W (DC) V W (AC) I L Cap Jump Start DC Working Voltage (V) AC Working Voltage (V) Maximum Leakage Current at the Working Voltage (μa) Capacitance frequency specified and.5 V RMS Maximum Jump start voltage at 5 minutes 56

59 AntennaGuard Automotive Series Multilayer Varistors for Automotive Applications S21 TRANSMISSION CHARACTERISTICS S21 Response ESD CHARACTERISTICS AEC-Q2 Pulse Test AEC-Q2-2 57

60 AntennaGuard Automotive Series Multilayer Varistors for Automotive Applications ELECTRICAL TRANSIENT CONDUCTION Electrical Transient Conduction ISO 7637 Pulse

61 USB Series Varistor Multilayer Varistors for Universal Serial BUS Protection GENERAL DESCRIPTION USB Series varistors are designed to protect the high speed data lines against ESD transients. They have very low capacitance and fast turn on times that make this series ideal for data and transmission lines with high data rates. The unique design enables these devices to meet the rigorous testing criteria of the IEC standards. New and improved manufacturing process has created these USB series to be one of the best plated varistors in the market today. FEATURES Zinc Oxide (ZnO) based ceramic semiconductor devices with non-linear voltage-current characteristics Bi-directional device, similar to back-to-back Zener diodes plus an EMC capacitor in parallel Entire structure made up of conductive ZnO grains surrounded by electrically insulating barriers, creating varistor-like behavior Electrical advantages over Zener diodes are repetitive strike capability, high in rush current capability, fast turn-on-time and EMI attenuation Protects against ESD to meet IEC kV (air) and 8kV (contact) Low capacitance for high speed data lines Available in discrete and array packages (2 and 4 element) Low Clamping Voltage Low Operating Voltage Response time is < 1ns MECHANICAL CHARACTERISTICS Available in EIA 63 (Single), 45 (Dual) and 612 (Quad) cases Plated Tin over Nickel Barrier Packaged in Tape & Reel PINOUT CONFIGURATION USB1/5/6 63 and 42 (Single) USB2 45 (Dual) PART NUMBERING USB 1 D P Style Case Size 1 = 63 (Single) 2 = 45 (2-Element) 4 = 612 (4-Element) 5 = 42 (Single) 6 = 42 (Single) Packaging Code (Reel Size) D = 7" (1, pcs.) R = 7" (4, pcs.) T = 13" (1, pcs.) W = 7" (1, pcs. 42 only) Termination P = Ni/Sn Alloy (Plated) USB4 612 (Quad) TYPICAL APPLICATIONS USB BUS Lines/Firewire Data BUS Lines I/O BUS Lines 1/1/1 Ethernet Transmission Lines Video Card Data Lines Handheld Devices Laptop Computers LCD Monitors LEAD-FREE COMPATIBLE COMPONENT 59

62 USB Series Varistor Multilayer Varistors for Universal Serial BUS Protection RATINGS Air Discharge ESD Contact Discharge ESD 15kV 8kV Operating Temperature 55 C to +125 C Soldering Temperature 23 C PERFORMANCE CHARACTERISTICS AVX Part No. V W (DC) V W (AC) V B I L E T I P Cap. Case Size Elements USB USB USB USB USB Termination Finish Code Packaging Code V W (DC) DC Working Voltage (V) V W (AC) AC Working Voltage (V) V B Typical Breakdown Voltage 1mA DC ) I L Maximum Leakage Current at the Working Voltage (μa) E T Transient Energy Rating (J, 1x1μS) I P Peak Current Rating (A, 8x2μS) Cap Typical Capacitance 1 MHz and.5vrms USB TYPICAL S21 CHARACTERISTICS -5 Insertion Loss (db) Frequency (MHz) USB1 USB5 USB6 USB2 USB4 Peak Power (W) Typical Pulse Rating Curve Pulse Duration (µs) 6

63 USB Series Varistor Multilayer Varistors for Universal Serial BUS Protection PHYSICAL DIMENSIONS AND PAD LAYOUT USB1/5/6 (Single) USB2 (Dual) W T P W USB4 (Quad) W P T T BL L BW BW BL L BL L D E E C A B A D A D C B C B mm (inches) L W T BW BL P USB1 1.6±.15.8±.15.9 Max N/A.35±.15 (.63±.6) (.32±.6) (.35 Max.) (.14±.6) N/A USB2 1.± ± Max.36±.1.2±.1.64 REF (.39±.6) (.54±.6) (.26 Max.) (.14±.4) (.8±.4) (.25 REF) USB4 1.6±.2 3.2± Max.41± /.8.76 REF (.63±.8) (.126±.8) (.48 Max.) (.16±.4) (.7+.1/.3) (.3 REF) USB5 / USB6 1.±.1.5±.1.6 Max N/A.25±.15 (.4±.4) (.2±.4) (.24 Max.) (.1±.6) N/A mm (inches) A B C D E USB (.35) (.3) (.1) (.3) N/A USB (.18) (.29) (.47) (.12) (.25) USB (.35) (.65) (.1) (.18) (.3) USB5 / USB (.24) (.2) (.67) (.2) N/A 61

64 USB Series Varistor Multilayer Varistors for Universal Serial BUS Protection APPLICATIONS D+ D- USB Port USB CONTROLLER USB2 USB Port Protection TX+ Ethernet Port RX+ TX- RX- USB2 Ethernet PHY USB2 Ethernet Port Protection 62

65 Communication BUS Varistor GENERAL DESCRIPTION The CAN BUS and FlexRay varistor is a zinc oxide (ZnO) based ceramic semiconductor device with non- linear voltage-current characteristics (bi-directional) similar to back-to-back Zener diodes and an EMC capacitor in parallel (see equivalent circuit model). They have the added advantage of greater current and energy handling capabilities as well as EMI/RFI attenuation. Devices are fabricated by a ceramic sintering process that yields a structure of conductive ZnO grains surrounded by electrically insulating barriers, creating varistor like behavior. HOW TO ORDER CAN 1 D P Style CAN = CAN BUS FLX = FlexRay Case Size 1 = 63 Discrete 2 = 45 2-Element 4 = Element 5 = 42 Discrete Packaging Code Termination (Reel Size) P = Ni/Sn Alloy D = 7" reel (1, pcs.) (Plated) R = 7" reel (4, pcs.) T = 13" reel (1, pcs.) W = 7" reel (1, pcs.) 42 and 21 only PERFORMANCE CHARACTERISTICS AVX Part No. V W (DC) V W (AC) V B I L E T I P Cap. Case Size Elements CAN CAN CAN CAN FLX Termination Finish Code Packaging Code V W (DC) DC Working Voltage (V) V W (AC) AC Working Voltage (V) V B Typical Breakdown Voltage 1mA DC ) V C Clamping Voltage I VC ) Test Current for V C (A, 8x2μS) I VC I L E T I P Cap Temp Range Maximum Leakage Current at the Working Voltage (μa) Transient Energy Rating (J, 1x1μS) Peak Current Rating (A, 8x2μS) Maximum Capacitance 1 MHz and.5vrms -55ºC to +125ºC EQUIVALENT CIRCUIT MODEL PCB Trace Discrete MLV Model L P R V C R P Ron Solder Pad To Device Requiring Protection Where: R v = Voltage Variable resistance (per VI curve) R p 1 12 Ω C = defined by voltage rating and energy level R on = turn on resistance L p = parallel body inductance Insertion Loss (db) Peak Power (W) Frequency (MHz) CAN1 CAN5 FLX5 Typical Pulse Rating Curve LEAD-FREE COMPATIBLE COMPONENT Pulse Duration (µs) 63

66 Communication BUS Varistor PHYSICAL DIMENSIONS mm (inches) 42 Discrete 63 Discrete 45 Array 612 Array Length 1. ±.1 (.4 ±.4) 1.6 ±.15 (.63 ±.6) 1. ±.15 (.39 ±.6) 1.6 ±.2 (.63 ±.8) Width.5 ±.1 (.2 ±.4).8 ±.15 (.32 ±.6) 1.37 ±.15 (.54 ±.6) 3.2 ±.2 (.126 ±.8) Thickness.6 Max. (.24 Max.).9 Max. (.35 Max.).66 Max. (.26 Max.) 1.22 Max. (.48 Max.) Term Band Width.25 ±.15 (.1 ±.6).35 ±.15 (.14 ±.6).36 ±.1 (.14 ±.4).41 ±.1 (.16 ±.1) SOLDER PAD DIMENSIONS mm (inches) 42/63 Discrete 45 Array 612 Array E E D D C B A A C B A C B A B APPLICATION AVX CAN BUS and FlexRay varistors offer significant advantages in general areas of a typical CAN or FlexRay network as shown on the right. Some of the advantages over diodes include: space savings higher ESD 25kV contact higher in rush current (4A) 8 x 2μS FIT rate.1 failures (per billion hours) 42 Discrete 63 Discrete 45 Array 612 Array A B C D E.61 (.24).51 (.2) 1.7 (.67).89 (.35).76 (.3) 2.54 (.1) (.18) (.29) (47) (.15) (.25) (.35) (.65) (.1) (.18) (.3) 42, Discrete Array Array FlexRay TM CAN Wheel Node Wheel Node Powertrain Body Control Module/CAN Gateway X-by-Wire Master Smart Junction Box Instrument Cluster Door Module Wheel Node Wheel Node Dash Board Node HVAC 64

67 UltraGuard Series ESD Protection for Low Leakage Requirements GENERAL DESCRIPTION Faster semiconductor clock speeds and an increasing reliance on batteries as power sources have resulted in the need for varistors that exhibit very low leakage current. The UltraGuard (UG) Series of AVX Transient Voltage Suppressors address this problem. The UG Series is the ideal transient protection solution for high clock speed integrated circuit application, battery-operated device, backlit display, medical/instrument application, low voltage power conversion circuits and power supervisory chip sets. In addition, UltraGuard s low leakage characteristics are also suitable for optic circuits like LDD, SerDes, and laser diodes. The UG Series is offered as discrete chips (42, 63, and 85), 2-element packages (45 and 58), and 4-element packages (612). LEAD-FREE COMPATIBLE COMPONENT Discrete Chips 2-Element Arrays 4-Element Arrays 42, 63, (45 and 58) (612) and 85 HOW TO ORDER VC UG 4 18 L 1 W P VC=Surface Mount Chip Series UG = Low Leakage Series Case Size 4 = 42 6 = 63 8 = 85 Maximum Working Voltage 3 = 3.VDC 5 = 5.VDC 75 = 7.5VDC 1 = 1.VDC 15 = 15.VDC 18 = 18.VDC Capacitance L = Low H = High No. of Elements Packaging (pieces per reel) D = 1, (7" reel) R = 4, (7" reel) T = 1, (13" reel) W = 1, (7" reel, 42 only) Termination Finish P = Ni/Sn Alloy (Plated) HOW TO ORDER MG UG 6 15 L 4 D P MG=Array Series UG = Low Leakage Series Case Size 4 = 45 5 = 58 6 = 612 Maximum Working Voltage 3 = 3.VDC 5 = 5.VDC 75 = 7.5VDC 1 = 1.VDC 15 = 15.VDC Capacitance L = Low H = High No. of Elements 2 = 2 Elements 4 = 4 Elements Packaging (pieces per reel) D = 1, (7" reel) R = 4, (7" reel) T = 1, (13" reel) Termination Finish P = Ni/Sn Alloy (Plated) 65

68 UltraGuard Series ESD Protection for Low Leakage Requirements AVX Part Number V CIR (DC) V CIR (AC) Cap Required Cap Freq I L Case Size Elements MGUG43L Low 3 M MGUG53L Low 425 M MGUG63L Low 425 M VCUG43L Low 175 M VCUG63L Low 75 K VCUG83H High 3 K VCUG83L Low 11 K VCUG123H High 3 K VCUG123L Low 12 K MGUG45L Low 4 M MGUG55L Low 425 M MGUG65L Low 425 M VCUG45L Low 175 M VCUG65L Low 55 K VCUG85L Low 75 K VCUG125H High 15 K VCUG125L Low 6 K MGUG475L Low 4 M MGUG575L Low 425 M MGUG675L Low 425 M VCUG475L Low 1 M VCUG675L Low 425 K VCUG875H High 9 K VCUG875L Low 325 K VCUG1275H High 15 K VCUG1275L Low 6 K MGUG41L Low 4 M MGUG51L Low 225 M MGUG61L Low 225 M VCUG41L Low 65 M VCUG61L Low 25 K VCUG81H High 55 K VCUG81L Low 225 K VCUG121H High 9 K VCUG121L Low 35 K MGUG415L Low 5 M MGUG515L Low 5 M MGUG615L Low 75 M VCUG415L Low 4 M VCUG615L Low 155 K VCUG815H High 25 K VCUG815L Low 12 K VCUG1215H High 5 K VCUG418L Low 3 M Termination Finish Code Packaging Code 66 V CIR (DC) V CIR (AC) Cap Req I L Cap Freq DC Circuit Voltage (V) AC Circuit Voltage (V) Standard or Low Maximum Leakage Current at the Circuit Voltage (μa) Typical Capacitance frequency specified and.5 Vrms Frequency at which capacitance is measured (K = 1kHz, M = 1MHz)

69 UltraGuard Series ESD Protection for Low Leakage Requirements PHYSICAL DIMENSIONS 42 Discrete 63 Discrete 85 Discrete Length 1. ±.1 (.4 ±.4) 1.6 ±.15 (.63 ±.6) 2.1 ±.2 (.79 ±.8) Width.5 ±.1 (.2 ±.4).8 ±.15 (.32 ±.6) 1.25 ±.2 (.49 ±.8) Thickness.6 Max. (.24 Max.).9 Max. (.35 Max.) 1.2 Max. (.4 Max.) Term Band Width.25 ±.15 (.1 ±.6).35 ±.15 (.14 ±.6).71 Max. (.28 Max.) 45 Array 58 Array 612 Array Length 1. ±.15 (.39 ±.6) 1.25 ±.2 (.49 ±.8) 1.6 ±.2 (.63 ±.8) Width 1.37 ±.15 (.54 ±.6) 2.1 ±.2 (.79 ±.8) 3.2 ±.2 (.126 ±.8) Thickness.66 Max. (.26 Max.) 1.2 Max. (.4 Max.) 1.22 Max. (.48 Max.) Term Band Width.36 ±.1 (.14 ±.4).41 ±.1 (.16 ±.4).41 ±.1 (.16 ±.4) mm (inches) SOLDER PAD DIMENSIONS mm (inches).61 (.24) (.67) (.2).61 (.24) (.2) 2.54 (.1).89 (.35).76 (.3) (.35).76 (.3) 3.5 (.12) 1.2 (.4) 1.2 (.4) 1.2 (.4) 1.27 (.5) Element Array A B C D E (.35) (.65) (.1) (.18) (.3) C B A D E C B A D E 2-Element Arrays A B C D E (.18) (.29) (.47) (.15) (.25) (.35) (.5) (.85) (.18) (.3) 67

70 TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip GENERAL DESCRIPTION AVX has combined the best electrical characteristics of its TransGuard Transient Voltage Suppressors (TVS) and its Feedthru Capacitors into a single chip for state-of-the-art overvoltage circuit protection and EMI reduction over a broad range of frequencies. This unique combination of multilayer ceramic construction in a feedthru configuration gives the circuit designer a single 85 chip that responds to transient events faster than any TVS device on the market today, and provides significant EMI attenuation when in the off-state. The reduction in parallel inductance, typical of the feedthru chip construction when compared to the construction of standard TVS or ceramic capacitor chips, gives the TransFeed product two very important electrical advantages: (1) faster turn-on time. Calculated response times of <2 psec are not unusual with this device, and measured response times range from 2 25 psec. The TransFeed turn-on characteristic is less than half that of an equivalent TransGuard part and TransGuards clamp transient voltages faster than any other bipolar TVS solution such as diodes; (2) the second electrical advantage of lower parallel inductance, coupled with optimal series inductance, is the enhanced attenuation characteristics of the TransFeed product. Not only is there significantly greater attenuation at a higher self-resonance frequency, but the roll-off characteristic becomes much flatter, resulting in EMI filtering over a much broader frequency spectrum. Typical applications include filtering/protection on Microcontroller I/O Lines, Interface I/O Lines, Power Line Conditioning and Power Regulation. Schematic Diagram IN Electrical Model IN L S L S OUT R V C R P R ON L P OUT TYPICAL APPLICATIONS Fingerprint ID Circuit Magnetic Field Circuit LCD Dashboard Driver Where designers are concerned with both transient voltage protection and EMI attenuation, either due to the electrical performance of their circuits or due to required compliance to specific EMC regulations, the TransFeed product is an ideal choice. HOW TO ORDER V 2 F 1 5 A 15 Y 2 E D P Varistor Chip Size 2 = 85 3 = 612 Feedthru Capacitor No. of Elements Voltage 5 = 5.6VDC 9 = 9.VDC 14 = 14.VDC 18 = 18.VDC Energy Rating X =.5J A =.1J C =.3J Varistor Clamping Voltage 15 = 18V 2 = 22V 3 = 32V 4 = 42V 5 = 5V Capaci tance Tolerance Y = +1/-5% DC Resistance 1 =.15 Ohms 2 =.2 Ohms 3 =.25 Ohms Feedthru Current D = 5 ma E = 75 ma F = 1. Amp Packaging Code Pcs./Reel D = 1, R = 4, T = 1, Termination Finish P = Ni/Sn Alloy (Plated) LEAD-FREE COMPATIBLE COMPONENT 68

71 TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip TRANSFEED ELECTRICAL SPECIFICATIONS AVX Working Working Breakdown Clamping Maximum Transient Peak Typical DC Maximum Part Number Voltage Voltage Voltage Voltage Leakage Energy Current Cap Resistance Feedthru (DC) (AC) Current Rating Rating Current V2F15A15Y2E ±2% V2F15C15Y1F ±2% V2F19A2Y2E ±15% V2F19C2Y1F ±15% V2F114A3Y2E ±12% V2F114C3Y1F ±12% V2F118A4Y2E ±1% V2F118C4Y1F ±1% V2F118X5Y3D ±1% V3F418A4Y3G ±1% V3F418X5Y3G ±1% Termination Finish Code Packaging Code V W (DC) DC Working Voltage (V) V W (AC) AC Working Voltage (V) V B Typical Breakdown Voltage 1mA DC ) V B Tol V B Tolerance is ± from Typical Value V C Clamping Voltage 1A 8x2μS ) I L Maximum Leakage Current at the Working Voltage (μa) E T Transient Energy Rating (J, 1x1μS) I P Peak Current Rating (A, 8x2μS) Cap Typical Capacitance 1MHz and.5 V DCR DC Resistance (Ohms) Maximum Feedthru Current (A) I FT db Attenuation vs Frequency 18LC TransFeed.1J TransFeed.3J -1 18A A 9A -2 18C 14C (db) -3 5A (db) -3 9C C Frequency (GHz) Frequency (GHz) 1 69

72 TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip DIMENSIONS 85 mm (inches) L W T BW BL EW X S 2.1 ± ± Max..46 ± ± ±.1.23 ±.5 (.79 ±.8) (.49 ±.8) (.45 Max.) (.18 ±.4) ( ) (.1 ±.5) (.4 ±.4) (.9 ±.2) L S X T BW C L BL W EW RECOMMENDED SOLDER PAD LAYOUT (Typical Dimensions) mm (inches) T P S W L C (.136).51 (.2).76 (.3) 1.27 (.5) 1.2 (.4).46 (.18) 4 Pad Layout T P P INPUT S W OUTPUT C L 7

73 TransFeed Array - V3F4 Series TVS Protection and EMI Attenuation in a 4-Element Array W E P D A T C B D ES BL L A F BW V3F4 DIMENSIONS mm (inches) L W T BW BL ES P 1.6 ± ± Max..41 ± ±.1.76 REF (.63 ±.8) (.128 ±.6) (.48 Max.) (.16 ±.4) ( ) (.16 ±.4) (.3 REF) mm (inches) A B C D E F.6 (.24) 1.6 (.64) 2.2 (.88).35 (.14).76 (.3) 2.6 (.14) 71

74 TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS INSERTION LOSS COMPARISON (TransFeed vs TransGuard ) V,.1J VC855A15 85 db vs Frequency -1 14V,.1J VC8514A3 (db) (db) V2F15A15Y2E V2F114A3Y2E Frequency (GHz) Frequency (GHz) -1 18V,.1J VC8518A4-1 18V,.5J VC8LC18A (db) -3-4 (db) V2F118X5Y3D -5 V2F118A4Y2E Frequency (GHz) Frequency (GHz) V,.3J VC855C V,.3J VC8514C3 (db) -3-4 (db) V2F15C15Y1F -5-6 V2F114C3Y1F Frequency (GHz) Frequency (GHz) -1 18V,.3J VC8518C4-2 (db) V2F118C4Y1F Frequency (GHz) 1 72

75 TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS 3 CURRENT vs TEMPERATURE 85.1 Joule Component Temperature ( C) 25 5V 9V 18LC 18V 14V Note: Dashed Portions Not Guaranteed Current (Amps) 1 CURRENT vs TEMPERATURE 85.3 Joule 3 Component Temperature ( C) 25 18V 14V 5V Current (Amps) 1 73

76 TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS FEEDTHRU VARISTORS AVX Multilayer Feedthru Varistors (MLVF) are an ideal choice for system designers with transient strike and broadband EMI/RFI concerns. Feedthru Varistors utilize a ZnO varistor material and the electrode pattern of a feedthru capacitor. This combination allows the package advantage of the feedthru and material advantages of the ZnO dielectric to be optimized. ZnO MLV Feedthrus exhibit electrical and physical advantages over standard ZnO MLVs. Among them are: 1. Faster Turn on Time 2. Broadband EMI attenuation 3. Small size (relative to discrete MLV and EMI filter schemes) The electrical model for a ZnO MLV and a ZnO Feedthru MLV are shown below. The key difference in the model for the Feedthru is a transformation in parallel to series inductance. The added series inductance helps lower the injected transient peak current (by 2πfL) resulting in an additional benefit of a lower clamping voltage. The lowered parallel inductance decreases the turn on time for the varistor to <25ps. Discrete MLV Model Discrete MLVF Model PCB Trace To Device Requiring Protection L S L S To Device Requiring Protection L P Solder Pad Solder Pad R V C R P R V C R P R on R on L P Solder Pad Where: Rv = Voltage Variable resistance (per VI curve) Rp 112 Ω C = defined by voltage rating and energy level Ron = turn on resistance Lp = parallel body inductance Solder Pad Where: Rv = Voltage Variable resistance (per VI curve) Rp = Body IR C = defined by voltage rating and energy level Ron = turn on resistance Lp = minimized parallel body inductance Ls = series body inductance 74

77 TransFeed AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip PERFORMANCE CHARACTERISTICS APPLICATIONS EMI Suppression Broadband I/O Filtering Vcc Line Conditioning FEATURES Small Size Low ESR Ultra-fast Response Time Broad S21 Characteristics MARKET SEGMENTS Computers Automotive Power Supplies Multimedia Add-On Cards Bar Code Scanners Remote Terminals Medical Instrumentation Test Equipment Transceivers Cellular Phones / Pagers TYPICAL CIRCUITS REQUIRING TRANSIENT VOLTAGE PROTECTION AND EMI FILTERING The following applications and schematic diagrams show where TransFeed TVS/ EMI filtering devices might be used: System Board Level Interfaces: (Fig. 1) Digital to RF Analog to Digital Digital to Analog Voltage Regulation (Fig. 2) Power Conversion Circuits (Fig. 3) GaAs FET Protection (Fig. 4) Fig. 1 System Interface Fig. 2 Voltage Regulators REGULATOR + Sensor/Keyboard/ Touchscreen Input DIGITAL BOARD By X Bus RF BOARD Fig. 3 Power Conversion Circuits/Power Switching Circuits Sensor Input ANALOG BOARD DIGITAL BOARD Display MAIN POWER +3.3V +5V POWER MANAGEMENT CHIP +3.3V INTERFACE CARD +1.8V +12V Keyboard DIGITAL BOARD ANALOG BOARD ASIC Fig. 4 GaAs FET Protection SPECIFICATION COMPARISON INPUT OUTPUT MLVF PARAMETER MLV ph L s typical N/A <6nh L p typical <1.5nh <.25Ω R on typical <.1Ω 1pf to 2.5nf C typical 1pf to 5.5nf see VI curves R v typical see VI curves >.25 x 1 12 Ω R p typical >1 x 1 12 Ω <25ps Typical turn on time <5ps Typical frequency response A comparison table showing typical element parameters and resulting performance features for MLV and MLVF is shown above. 75

78 TransGuard TYPICAL CIRCUITS REQUIRING PROTECTION The following applications and schematic diagrams show where TransGuards might be used to suppress various transient voltages: ASIC Reset & Vcc Protection Micro Controllers, Relays, DC Motors I/O Port Protection Keyboard Protection Modem Protection Sensor Protection Preamplifier Protection Audio Circuit Protection LCD Protection Optics Protection 76

79 TransGuard AVX Multilayer Transient Voltage Protection Typical Circuits Requiring Protection ASIC RESET & Vcc PROTECTION 5.6V.1-.4J 1 μf.1 μf.1 μf 5.6V.1J IOCK S IOCS16 1 IRQSETO IRQSET1 Vcc RADO-7 AO-23 BHE NPBUSY CPUCLK GND DPH DRQIN NPERR HLDA ICHRDY RESET MASTER MNIO RDYIN PCUIN DO-15 PDREF BCLK2 CLK14 IOR IOW LA2 CASH CASLO CASH1 CASL1 CASH2 CASL2 CASH3 CASL3 RAS RAS1 RAS2 RAS3 RAS4 MICRO CONTROLLERS RELAYS, DC MOTORS TRANSGUARD CHARACTERISTICS WORKING VOLTAGE RELAY OR MOTOR VOLTAGE ENERGY RATING TYPICALLY >.3J CAPACITANCE IS OF NO CONCERN CMOS RELAY DRIVER V CC LM319 RELAY DRIVER +5V +28V IN 1 IN 2 3V.4J RELAY 1/2 MM74C98 MM74C918 18V.4J RELAY IN 1 IN 2 1/2 LM319 = TransGuard 77

80 TransGuard AVX Multilayer Transient Voltage Protection Typical Circuits Requiring Protection I/O PORT PROTECTION TRANSGUARD CHARACTERISTICS WORKING VOLTAGE TYPICALLY 14V - 18V ENERGY RATING TYPICALLY.5J -.1J CAPACITANCE SHOULD BE MINIMIZED SUB NOTEBOOK & PDA S NOTEBOOK & WORK STATION IOCS16 HDCS1 IDED7 HDCSO IDEENLO IDEENHI AVCC SETCUR AVSS RVI FILTER FGND25 FGND5 DO-D9 TC DACK IRQ3 IRQ4 PINTR FINTR IOR AEN FDRQ RESET PWRGD INDEX MTRO DRV1 DRVO MTR1 DIR STEP WDATA WG ATE TRKO WRPRT D C D T T T S D R S R X R H D AO D D S A S K T E C - A L H GA9 RXD2 DCD2 R12 DTR1 CTS1 RTS1 DSR1 TXD1 RXD1 DCD1 RI1 Vcc STROBE AUTOF ERROR INIT SLCTIN PARALLEL OUTPUT TO 7 ACK BUSY PE SLCT X2 X1/CLK PREN DRVTYP D D D D MAX 211 DRVR/RCVR R R R R R KEYBOARD PROTECTION TRANSGUARD CHARACTERISTICS WORKING VOLTAGE >5.6V ENERGY RATING TYPICALLY <.4J CAPACITANCE PREFERRED TO BE MINIMUM KEYBOARD CONTROLLER 74AHCT5 FERRITE BEAD DATA 14V - 18V.1J 74AHCT5 FERRITE BEAD CLOCK 14V - 18V.1J = TransGuard 78

81 TransGuard AVX Multilayer Transient Voltage Protection Typical Circuits Requiring Protection MODEM PROTECTION P1/8 P1/4 P1/2 P1/1 P1/3 P1/6 P1/5 +12V -12V 33 pf TRANSGUARD CHARACTERISTICS WORKING VOLTAGE <26V ENERGY RATING.1J 2/5/9 +5V S1-5 1 megohm DTR RTS TD MC MC1 MC2 MC3 MC4 RD CTS Am791 CD BRTS 2 4 9/22 +5V -5V RC TC RES RING 1K ohm.68 μf.68 μf 2 pf 1 ohm 1 megohm 33 nf 1.2K ohm 1.2K ohm 15 pf 22 pf +5V +5V SENSOR PROTECTION TRANSGUARD CHARACTERISTICS WORKING VOLTAGE TYPICALLY >14V ENERGY RATING >.4J CAPACITANCE IS NO CONCERN 1 μf 18 ohm 1N44 1N44 12V MOV 1N44 14V.4J.1 μf32 = TransGuard 79

82 TransGuard AVX Multilayer Transient Voltage Protection Typical Circuits Requiring Protection ANTENNA AND PREAMPLIFIER PROTECTION TRANSGUARD CHARACTERISTICS WORKING VOLTAGE TYPICALLY 18V - 26V ENERGY RATING.5J -.9J CAPACITANCE OF CONCERN ON MANY DESIGNS PREAMPLIFIER PROTECTION +5V 15 pf 1 μh RF INPUT.1 μf MPF12 1.8K ohm.1 μf NEXT STAGE 26V.1J 1 megohm 1 ohm 18 pf AUDIO CIRCUIT PROTECTION TRANSGUARD CHARACTERISTICS WORKING VOLTAGE TYPICALLY 14V - 18V ENERGY RATING.1J PAGER AUDIO PROTECTION Vcc NOTEBOOK, WORK STATION AUDIO PROTECTION IN 68 ohm 68 ohm INPUT FROM up OR DRIVER IC 2N297 14V.1J IN 1K ohm 2N V.1J = TransGuard 8

83 TransGuard AVX Multilayer Transient Voltage Protection Typical Circuits Requiring Protection LCD PROTECTION TRANSGUARD CHARACTERISTICS WORKING VOLTAGE < 5.6V ENERGY RATING <.1J 8 LSI CONTROLLER D-D7 WR COM. DRIVER x1 64 LCD 24 x 64 RD CE C/D FS SEG DRIVER x3 RESET MHz 8 TRANSGUARD OPTIONAL VC6LC18X5 StaticGuard S - RAM OPTICS PROTECTION TRANSGUARD CHARACTERISTICS WORKING VOLTAGE 18V ENERGY RATING.1J CAPACITANCE SHOULD BE MINIMIZED OPTO ISOLATER PROTECTION LASER DIODE PROTECTION 5V 33 ohm 33 ohm 1N ohm MICRO CONTROLLER 5.6V.1J OPTO TRIAC OUTPUT SIGNAL TRIAC 1 ohm 1 pf.1 μf 2N44 2N V.1J LASER DIODE 3.9K ohm 2N ohm OUTPUT SIGNAL 1K ohm 1N4148 2N44 VN64GA 3.9K ohm 2N6659 = TransGuard 81

84 TransGuard APPLICATION NOTES AVX Multilayer Varistors Assembly Guidelines IEC 61-4 Requirements Turn On Time Characteristics of AVX Multilayer Varistors The Impact of ESD on Insulated Portable Equipment AVX TransGuard Motor and Relay Application Study AVX Multilayer Varistors in Automobile MUX Bus Applications 82

85 TransGuard AVX Multilayer Varistors Application Notes TRANSGUARD SURFACE MOUNT DEVICES The move toward SMT assembly of Transient Voltage Suppressors (TVS) will continue accelerating due to improved long-term reliability, more efficient transient voltage attenuation and size/functionality/cost issues. TransGuards are uniquely suited for wide-scale usage in SMT applications. TransGuards exhibit many advantages when used in SMT assemblies. Among them are: Available in standard EIA chip sizes 42/63/85/ 126/121. Placed with standard equipment (8mm tape and reel). Processed with fewer guidelines than either ceramic chip or resistor chip devices. Exhibit the highest energy/volume ratio of any EIA size TVS. This general guideline is aimed at familiarizing users with the characteristics of soldering multilayer SMT ZnO TransGuards. TransGuards can be processed on wave or infrared reflow assembly lines. For optimum performance, EIA standard solder pads (land areas) shown in Figure 1 are recommended regardless of the specific attachment method. Dimensions: mm (inches).61 (.24) (.67) (.2).61 (.24) (.4) (.16) (.8) 1.2 (.4).51 (.2) 1.65 (.65) (.1).89 (.35).76 (.3) (.16).89 (.35).76 (.3) 1.2 (.4) 2.3 (.8) 1.2 (.4) 3.5 (.12) 2.54 (.1) (.4) 1.2 (.4) 1.2 (.4) Figure 1: TransGuard Solder Pad Dimensions 1.27 (.5) 85 STORAGE Good solderability of plated components is maintained for at least twelve months, provided the components are stored in their as received packaging at less than 3 C and 85% RH. SOLDERABILITY Plated terminations will be well soldered after immersion in a 6/4 tin/lead solder bath at 235 C ±5 C for 5 ±1 seconds. LEACHING Plated terminations will resist leaching for at least 3 seconds when immersed in 6/4 tin/lead solder at 26 C ±5 C. RECOMMENDED SOLDERING PROFILES Component Temperature / ºC Component Temperature / ºC GENERAL Recommended Reflow Profiles Pb Free Recommended Pb Free Max with care Sn Pb Recommended Time / secs Recommended Soldering Profiles Preheat Wave Cool Down Time / seconds Surface mount multilayer varistors (MLVs) are designed for soldering to printed circuit boards or other substrates. The construction of the components is such that they will withstand the time/temperature profiles used in both wave and reflow soldering methods. 83

86 TransGuard AVX Multilayer Varistors Application Notes HANDLING MLVs should be handled with care to avoid damage or contami nation from perspiration and skin oils. The use of tweezers or vacuum pickups is strongly recommended for individual components. Bulk handling should ensure that abrasion and mechanical shock are minimized. Taped and reeled components provide the ideal medium for direct presentation to the placement machine. PREHEAT It is important to avoid the possibility of thermal shock during soldering and carefully controlled preheat is therefore required. The rate of preheat should not exceed 4 C/second and a target figure 2 C/second is recommended. SOLDERING Mildly activated rosin fluxes are preferred. The minimum amount of solder to give a good joint should be used. Excessive solder can lead to damage from the stresses caused by the difference in coefficients of expansion between solder, chip and substrate. AVX terminations are suitable for all wave and reflow soldering systems. If hand soldering cannot be avoided, the preferred technique is the utilization of hot air soldering tools. COOLING Natural cooling in air is preferred, as this minimizes stresses within the soldered joint. When forced air cooling is used, cooling rate should not exceed 4 C/second. CLEANING Flux residues may be hygroscopic or acidic and must be removed. AVX MLVs are acceptable for use with all of the solvents described in the specifications MIL-STD-22 and EIA-RS-198. Alcohol-based solvents are acceptable and properly controlled water cleaning systems are also acceptable. Many other solvents have been proven successful, and most solvents that are acceptable to other components on circuit assemblies are equally acceptable for use with MLVs. POST SOLDER HANDLING Once the components are soldered to the board, any bending or flexure of the PCB applies stresses to the soldered joints of the components. For leaded devices, the stresses are absorbed by the compliancy of the metal leads and generally don t result in problems unless the stress is large enough to fracture the soldered connection. Surface mount devices are more susceptible to such stress because they don t have compliant leads and are brittle in nature. The most frequent failure mode is high leakage current (or low breakdown voltage). Also, a significant loss of capacitance due to severing of contact between sets of internal electrodes may be observed. Cracks caused by mechanical flexure are very easily identified and generally take one of the following two general forms: Type A: Angled crack between bottom of device to top of solder joint. Type B: Fracture from top of device to bottom of device. Mechanical cracks are often hidden underneath the termination and are difficult to see externally. However, if one end termination falls off during the removal process from PCB, this is one indication that the cause of failure was excessive mechanical stress due to board flexure. COMMON CRACKS OF MECHANICAL CRACKING The most common source for mechanical stress is board depanelization equipment, such as manual breakapart, v- cutters and shear presses. Improperly aligned or dull cutters may cause torquing of the PCB resulting in flex stresses being transmitted to components near the board edge. Another common source of flexural stress is contact during parametric testing when test points are probed. If the PCB is allowed to flex during the test cycle, nearby components may be broken. A third common source is board-to-board connections at the vertical connectors where cables or other PCBs are connected to the PCB. If the board is not supported during the plug/unplug cycle, it may flex and cause damage to nearby components. Special care should also be taken when handling large (>6" on a side) PCBs since they more easily flex or warp than smaller boards. 84

87 TransGuard AVX Multilayer Varistors Application Notes REWORKING ASSEMBLIES Thermal shock is common in MLVs that are manually attached or reworked with a soldering iron. AVX strongly recommends that any reworking of MLVs be done with hot air reflow rather than soldering irons. Direct contact by the soldering iron tip often causes thermal cracks that may fail at a later date. If rework by soldering iron is absolutely necessary, it is recommended that the wattage of the iron be less than 3 watts and the tip temperature be <3 C. Rework should be performed by applying the solder iron tip to the pad and not directly contacting any part of the component. VARISTOR SOLDERABILITY Historically, the solderability of Multilayer Varistors (MLVs) has been a problem for the electronics manufacturer. He was faced with a device that either did not wet as well as other electronic components, or had its termination material leached away during the assembly process. However, by utilizing proprietary procedures, AVX Corporation provides the market with a MLV that has solderability comparable to that of other electronic components, and resists leaching during assembly. Clearly, a plated termination system (as seen in Figure 3) is desired. This system, which is typical of other electronic components such as capacitors and resistors, produces a much better assembled product. Figure 2 Leaching of Unplated Terminations Non-Wetting of Unplating Terminations BACKGROUND The basic construction of an unplated MLV is presented in Figure 1. The external termination is a metal that connects Ceramic Electrodes Figure 1 Unplated MLV Thick Film Material the internal electrodes to the circuitry of the assembly using the MLV. The external electrode must accomplish two goals. First, it must be sufficiently solderable to allow the solder used in assembly to wet the end of the chip and make a reliable connection to the traces on the circuit board. Second, it must be robust enough to withstand the assembly process. This is particularly important if wave soldering is used. Unfortunately these two goals are competing. In order to achieve good solderability, an alloy high in silver content is chosen. However, this alloy is prone to leaching during assembly, so an additional metal is added to improve the leach resistance. While this improves the leach resistance, this addition makes the termination less solderable. The results are either terminations that leach away, or do not solder well (see the photographs in Figure 2). Ceramic Figure 3 Plated MLV Electrodes Solder Layer Nickel Layer Thick Film Material In the plated termination, the base termination layer is still used (it provides contact from the electrodes to the circuitry). On top of the base termination is a layer of nickel. This is the surface to which the solder bonds during assembly. It must be thick enough to stay intact during IR reflow or wave 85

88 TransGuard AVX Multilayer Varistors Application Notes soldering so that the thick film material does not leach away. It must also be thick enough to prevent the inter-metallic layer between the thick film termination and the nickel layer from affecting the solderability. In order to protect the nickel (i.e., maintain its solderability), a layer of solder is plated on top of the nickel. The solder preserves the solderability of the nickel layer. It must be thick and dense to keep oxygen and water from reaching the nickel layer. Figure 5 AVX Plated Parts THE CHALLENGE Zinc oxide varistors are semi-conductive in nature that is what allows them to turn on and divert a damaging transient away from sensitive electronic circuitry and safely to ground. This semi-conduction poses a major problem for the manufacturer that wants to plate the terminations the ceramic plates also! This condition, overplating, must be controlled, as it is cosmetically undesirable and could result in an unwanted path of conduction across the chip. Early efforts in plating MLVs revolved around limiting the time that the chip was in the plating bath. This helped prevent overplating, but also produced chips with marginal solderability. The photographs in Figure 4 depict the problems that occur when the plated layers are not thick enough. THE SOLUTION AVX has developed a proprietary process that passivates the ceramic surface of the MLV. This allows us to plate the parts for a longer time without getting the overplate. This results in significantly thicker layers of nickel and alloy plated onto the base termination. These thicker layers translate into bond strengths that are typically twice those of our competitors and solder fillets and parts that pass all measured of solderability (as seen in Figure 5). AVX: The solution for MLV assembly problems. Figure 4 Problems when the Plated Layers are Too Thin 86

89 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: IEC 61-4 Requirements WHAT IS IEC 61-4? The International Electrotechnical Commission (IEC) has written a series of specifications, IEC 61-4, which mandate the performance of all electronic devices in a variety of transient and incident RF conditions. This specification requirement resulted as part of Europe s move toward a single market structure and a desire to formalize and harmonize current member countries requirements. As of January 1, 1996, all electronic and electrical items sold to Europe must meet IEC 61-4 series specifications. WHY IS IEC 61-4 REQUIRED BY EUROPE? The various regulatory agencies within Europe feel that the IEC 61-4 series of specifications is necessary to insure acceptable performance of electronic equipment in a world filled with increasingly more Electromagnetic Interference - EMI. Furthermore, as electronic systems become more portable, and the transient susceptibility of semiconductors increases, government regulations are essential to maintain a minimum level of performance in all equipment. Europe is so serious about the problem that they require that equipment be certified via testing to meet IEC 61-4 series specifications after 1/1/96 to avoid fines and prosecution. HOW DO COMPANIES SELLING ELECTRONIC SYSTEMS MEET IEC 61-4 PARTS 2-5 SPECIFICATIONS? Companies and design engineers must now use protective circuits or devices to meet these requirements. First, a description of IEC 61-4/2-6 is in order: IEC ESD TESTING REQUIREMENTS All equipment destined for Europe must be able to withstand 1 strikes of ESD waveforms with Tr < 1ns in contact discharge mode (preferred) at pre-selected points accessible during normal usage or maintenance. Testing shall be performed at one or more of four (4) severity levels, depending upon equipment category. Level Contact Discharge 1 Air Discharge Mode Mode Test Voltage Test Voltage kv kv Test Conditions 1 Preferred mode of testing due to repeatability. WAVEFORM PARAMETERS Level Test First Peak TR 3 ns 6 ns Voltage of ns Current Current Level Discharge Amps ± Amps ± kv Current 3% 3% Amps ± 1% Upon completion of the test, the system must not experience upset (data or processing errors) or permanent damage. The waveforms are to be injected at or along the DUT s body which is accessible in normal set-up and operation. IEC ELECTROMAGNETIC COMPATIBILITY IMPACT TESTING (EMC) This test is concerned with the susceptibility of equipment when subjected to radio frequencies of 27 MHz to 5 MHz. The system must be able to withstand three (3) incident radiation levels: Level 1 1V/m field strength Level 2 3V/m field strength Level 3 1V/m field strength Level X User defined > 1V/m field strength The system must not experience upset (data or processing errors) or permanent errors. IEC ELECTRICAL FAST TRANSIENT (EFT) TESTING The EFT test is modeled to simulate interference from inductive loads, relay contacts and switching sources. It consists of coupling EFT signals on I/O parts, keyboard cables, communication lines and power source lines. The system, depending upon appropriate severity level, must be able to withstand repetition rates of 2.5 khz to 5 khz for 1 minute as follows: Open Circuit Output Voltage/1% On Power Supply On I/O, Signal, Data, Control lines Level 1.5kV.25kV Level 2 1kV.5kV Level 3 2kV 1kV Level 4 4kV 2kV 87

90 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: IEC 61-4 Requirements IEC UNIDIRECTIONAL POWER LINE SURGE TEST The details of this specification for high energy disturbances are being addressed in several drafts under discussion within the EC at this time. IEC CONDUCTED RF TEST FROM 9kHz TO 8MHz The details of this specification for conducted broad band RF signals are being addressed in a first edition draft within the EC at this time. Designers have the option of using AVX TransGuards to meet IEC , 3 and 4. In the case of IEC TransGuards can be used to suppress the incoming Transient just like a Zener diode would. TransGuards, however, exhibit bipolar characteristics, a faster turn-on-time (<1nS), a better repetitive strike capability and superior thermal stability to the Zener suppression device. Furthermore, TransGuards are typically smaller and lighter when placed on SMT circuit boards. See Figure 1 for data illustrating IEC repetitive strike capability. The TransGuards effective capacitance allows the device to be used to meet IEC and The device s parallel capacitance can be used as effectively as a capacitor to block low level incident and conducted RF energy. If in the case of some levels of IEC and IEC when the intensity of pulse is greater than the device s breakdown capability it will then turn on and suppress via MOV means rather than capacitance (as in the small signal case). Effectiveness hinges upon the proper placement of the device within the PCB (which is usually easily accomplished since TransGuards are so small). SUMMARY AVX TransGuards are exceptionally suited to meet the defined portions of the IEC 61-4 document. Experimentation is critical to proper choice and selection of devices to suppress /4. Samples are available from your local sales representative. Voltage (v) Leakage Current (A) IEC ESD DEVICE TEST 25kV ESD STRIKES On VC8514C3 Vb Pre Test Vb Post Test 25kV Direct Discharge, 25 hits Vc Pre Test TransGuard Parameters IEC ESD DEVICE TEST 25kV ESD STRIKES On VC8514C3 Vc Post Test II Pre Test 25kV Direct Discharge, 25 hits II Post Test Figure 1 88

91 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: Turn on Time Characteristics of AVX Multilayer Varistors INTRODUCTION Due to the growing importance of ESD immunity testing, as required by the EMC Directive, proper selection of voltage suppressor devices is critical. The proper selection is a function of the performance of the device under transient conditions. An ideal transient voltage suppressor would reach its clamping voltage in zero time. Under the conditions imposed by the 1991 version of IEC , the actual turn-on-time must be less than one nanosecond to properly respond to the fast leading edge of the waveform defined in the standard. It has been found during testing of transient suppressors that the response time is very closely dictated by the packaging of the device. Inductance that is present in the connection between the silicon die and the leads of the device creates an impedance in series with the suppressor device; this impedance increases the overall device response time, reducing the effectiveness of the suppressor device. The purpose of this paper is to present the Turn on Time characteristics of Multilayer Varistors (MLVs) and to compare the MLV Turn on Time to that of various silicon transient voltage suppressors (SiTVs). The Turn on Time of a transient voltage suppressor (TVS) is of growing importance since IEC now specifies ESD waveform with a rise time < 1 ns. Therefore, TVS s must have a turn on time < 1 ns to effectively suppress ESD. In many, if not all, ESD suppression applications, TVS turn on time can be of more importance than absolute clamping voltage (Vc) of the TVS (assuming that the TVS clamping voltage is less than the damage voltage of the circuit or IC). To measure the turn on time of today s TVS s, a broad cross section of MLVs and SiTVs were chosen. Only surface mount devices were chosen in order to best represent today s TVS current usage/trends and to keep the test matrix to a reasonable level of simplicity. The following devices were tested: SMT MLV SiTVS MA141WA 63 BAV SOT 23 type 126 SMB - 5W gull-wing SM device 121 SMC - 15W gull-wing SM device TEST PROCEDURE The TVS device under test (DUT) was placed on a PCB test fixture using SN6/4 solder. The test fixture (see Figure 1) was designed to provide an input region for an 8kV contact ESD discharge waveform (per IEC level 4 requirements). In addition, the fixture was designed to provide low impedance connections to the DUTs. Figure 1. DUT Test Fixture The ESD pulse was injected to the PCB from a Keytek minizap ESD simulator. Additionally, the fixture was to channel the ESD event to a storage oscilloscope to monitor the suppressor s response. Six resistors were used on the PCB to provide waveshaping and an attenuated voltage to the storage scope (see Figure 2): MINI-ZAP with CONTACT DISCHARGE TIP "LAUNCH AREA" R1 1.6k R2 1.6k R3 1.6k DEVICE UNDER TEST R4 1k R5 1k R6 2 Figure 2. Schematic of Test Set Up TEK TDS 54 SCOPE 89

92 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: Turn on Time Characteristics of AVX Multilayer Varistors The functions of the resistors are as follows: The resistor values were adjusted in open circuit conditions to obtain best open circuit response. R1, R2 (1.6K) - provide wave shaping during the ESD discharge event R3 (1.6K), R4 (1K), R5 (1K) - Form a 6 db Attenuator (1:1 ratio) for input of Tektronix TDS 54 1 giga sample/second storage oscilloscope R6 (2 Ω) - provides matching to the 5 ohm coax feeding the TDS 54 oscilloscope. The open circuit response of the ESD test fixture with a 9kV ESD pulse is shown in Figure 3. Task Stopped: 1. CH1 Figure 3. Open Circuit Response of Test Fixture to an Injected ESD Waveform The graph shows the voltage attenuated by a factor of 1, with a 8ps risetime for the ESD waveform (this agrees with typical data given by Keytek for equipment performance). It should be noted that only the positive polarity was tested. Prior testing showed turn on time was not dependent upon waveform polarity (assuming that DUTs are bidirectional). TEST RESULTS 74 Acquisitions 2. V M 2.ns CH1 2.2 V Δ: 8ps O: -1.2ns CH1 Rise 8ps MLV TURN ON TIME TRANSGUARDS The turn on time test results for AVX TransGuards showed that all case sizes were capable of a sub-nanosecond turn on response. This corresponds favorably with the calculated turn on time of less than 1 ns. Specific performance data follows: AVX TransGuard CASE SIZE TURN ON SPEED 63 <.7 ns 85 <.9 ns 126 <.9 ns 121 <.8 ns TVS TURN ON TIME Test results for SiTVs varied widely depending upon the physical size and silicon die mounting configuration of the device. The results agree with several SiTVs manufacturers papers indicating that the absolute response from the silicon die could be < 1 ns. However, when the die is placed in a package, the turn on time delay increases dramatically. The reason for this is the series inductance of the SiTVs packaging decreases the effective response time of the device. Reports of 1-5 ns are frequently referred to in SiTVs manufacturers publications. Further, the turn on times for SiTVs vary dramatically from manufacturer to manufacturer and also vary within a particular manufacturers lot. The data provided in the following table generally agreed with these findings: SUMMARY This test confirms calculations that show that AVX TransGuards have a true sub-nanosecond turn on time. Although the silicon die of a SiTVs has a sub-nanosecond response, the packaged SiTVs typically has a response time much slower than a TransGuard. If the two devices were directly compared on a single graph (see Figure 4), it could be shown that the TransGuard diverts significantly more power than even the fastest SiTVs devices. Additionally, TransGuards have a multiple strike capability, high peak inrush current, high thermal stability and an EMI/RFI suppression capability which diodes do not have. Ip (%) CASE SIZE MA141WA BAV 99 SOT 23 Type SMB SMC TRANSGUARD TURN-ON TIME ( N SEC) 2 DIODE TURN-ON RANGE ( N SEC) Time (ns) IEC 81-2 ESD WAVE Typical Data SiTVS TURN ON SPEED.8ns.9ns to 1.2ns.8ns 1.5ns to 2.2ns 1.5ns to 3ns TRANSGUARD vs SILICON TVS TURN ON COMPARISON ESD WAVEFORM SHAPE Figure 4. 9

93 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: The Impact of ESD on Insulated Portable Equipment The purpose of this discussion is to recap the impact ESD has on portable, battery powered equipment. It will be shown that ESD can cause failures in floating ground systems in a variety of ways. Specifically, ESD induced failures can be caused by one or more of its complex components: Predischarge - Corona Generated RF Predischarge - E Field Discharge - Collapsing E Field Discharge - Collapsing H Field Discharge - Current Injection...Voltage...Additional Fields With this in mind it will be shown that the only way to insure equipment survivability to ESD is to use a Transient Voltage Suppressor (in addition to proper circuit layout, decoupling, and shielding). In order to get a better understanding of what happens in an ESD event the charge developed by a human body should be defined. The ESD schematic equivalent of the human body model is shown in Figure 1. Typically, the charge developed on a person can be represented by a 15pF capacitor in series with a resistance of 33 ohms. The energy of an ESD waveform generated from this model is Q = 1/2 CV 2 where Q = total energy in Joules, C = capacitance of the human body model in farads and V = charging voltage in volts. Voltages can be as high as 25 kv, however typical voltages seen are in the 8 to 15 kv regions. In the predischarge scenario (Figure 2) a human charged to 2 kv may approach a battery powered system on a table. As the person reaches toward the system electrostatics dictate that the system will have an equal and opposite charge on the system s surface nearest to the person. SInce the system we are approaching is isolated from ground, the charge is only redistributed among the device. (If the system were grounded a current would be generated by the loss of electrons to ground. The system would then become positive relative to ground). The rate of approach of the human body model affects the charging current to a small extent. However, most importantly, it is the electrostatic field and the unequal voltages which developed across the equipment that cause the destruction of components within the system. In general, unprotected IC s (particularly CMOS) are susceptible to damage due to induced E field voltages. This problem is further complicated by the device type and complexity and the fact that the breakdown voltage of a generic IC will vary greatly from manufacturer to manufacturer (Figure 3). This brief discussion should be adequately convincing that electrostatically induced E field can impact system reliability. IC protection can be achieved by placing a transient suppressor on the most susceptible pins of the sensitive IC s (e.g., Vcc and I/O pins, etc.). 1 IC TYPE vs SUSCEPTIBILITY R H Where: C H = Human body model capacitance typically 15pF VOLTS 1 1 C H Figure 1. Human Body Model R H = Human body model resistance typically 33 Ω 1 CMOS S.TTL M.FET B.P. ECL JFET EPROM GaAsFET TECHNOLOGY TYPICAL MIN. TYPICAL MAX. PREDISCHARGE E FIELD FAILURES Now that we have a definition of the basic ESD human body model we can discuss the predischarge E field failure mode. POSITIVE INDUCED VOLTAGE 2 kv RESULTING NEGATIVE CHARGE NEGATIVE 2 kv CHARGE Figure 3. IC Type E Field Susceptibility CONTACT DISCHARGE FAILURES As the charged person gets closer to the system, the situation is more complex. First a much more detailed human body model is needed to represent the complex transmission line which will transport energy to the system (see Figure 4). In this discussion we will only consider the case of a single contact discharge. In the real world, however, multiple discharges will likely occur (possibly caused by a person s hand reacting to an ESD spark and then touching the system again, etc.). In contact discharge, when a charged person approaches the system, E fields are induced. As the person gets closer to the system, the field intensity becomes greater, eventually reaching a point large enough to draw an arc between the Figure 2. Pre-Discharge Scenario 91

94 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: The Impact of ESD on Insulated Portable Equipment person and the system. In contrast to the noncontrast E field example, the speed of approach is of great importance in the contact discharge model. A fast approach causes a more intensive discharge and faster current rise times and peaks. The model shown on Figure 4 can be broken up into 4 sections for the sake of simplification. The first section is the human body model input voltage. This section is identical to the simplified human body model shown in Figure 1. Section 2 takes into account how the human body model gets the energy to the system. This section considers the inductance, resistance and capacitance of the human s arm and finger and its capacitance relative to ground and the system. The third section is the inductance and resistance of the arc which is created as section 2 approaches the system (Section 4). Section four is the system itself. The combination of the capacitances and inductances in these sections form a complex network of LC tank circuits which will inject a variety of waveforms (transients) into the system. These waveforms will range in frequency from very high (5 GHz) to high (1 MHz) to low (2-5 MHz) plus a variety of under damped and over damped waveforms. Finally, in addition to current/voltage injection occurring as a result of the discharge, there will be collapsing E and H fields and significant high frequency RF waveforms. Many times these waveforms propagate into shielded equipment and cause system/device failures. SUMMARY Designers may be inclined to think that E field variation due to near field electrostatics (as in the person being close to the system but not touching it) can be eliminated by shielding. This is usually not the case because it is difficult to get a tight columbic shield around internal circuitry without incurring significant additional manufacturing costs. Additionally, the shielding will likely have seams, ventilation holes, or I/O ports which represent a significant portion of a wavelength (at 5 GHz). Therefore, E fields and corona generated RF can be a problem. Finally, if the system has I/O connectors, keyboards, antennas, etc., care must be taken to adequately protect them from direct/and indirect transients. The most effective resolution is to place a TransGuard as close to the device in need of protection as possible.these recommendations and comments are based upon case studies, customer input and Warren Boxleitner s book Electrostatic Discharge and Electronic Equipment - A Practical Guide for Designing to Prevent ESD Problems. Section 3 ARC L S R S Section 1 Human Body Model Section 2 Arm/Hand Model Section 4 L H RH L A R A C F L C AK C H C A C K R Where: C H = Lumped capacitance between the human body and earth R H = Lumped resistance of the human body L H = Lumped inductance of the human body C A = Lumped capacitance between the person s arm and earth C AK = Lumped capacitance between the person s arm (and near portions of the body) and the keyboard R A = Lumped resistance of the person s arm s discharge path L A = Lumped inductance of the person s arm s discharge path C F = Capacitance between person s finger, hand, and the keyboard C K = Lumped capacitance of the keyboard to earth R K = Lumped resistance of the keyboard earth ground path = Lumped inductance of the keyboard earth ground path L K Figure 4. Contact Discharge Model 92

95 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: Motor and Relay Application Study PURPOSE A significant number of end customers have experienced failures of circuitry in and around low voltage relays and motors. Additionally, EMI problems have been associated with running motors. This study is aimed at evaluating how TransGuards can reduce EMI from running motors and clamp transients generated from relays and motors during power off. DESCRIPTION Three different motors and two different relays were chosen to represent the wide range of possible devices used by designers. Device choices were as follows: MOTORS Cramer Comair Comair RELAYS Potter and Brumfield 81 series Geared Motor 12V, 3rpm (48 RPM armature speed) 17ma Start/Run Torque 3oz Rotron DC Biscut Fan - 24V, 48ma Rotron DC Biscut Fan - 12V, 9ma Potter and Brumfield 24V Relay 1 3 HP 12V AC, 1A 24 VAC Rating 12V Relay 1 3 HP 12V AC, 1A 24 VAC Rating A Tektronix TDS 784A four channel 1GHz 4G S/s digitizing storage scope was used to capture the -1 2 LI2 transient peak from the relays and motors. A x1 probe was connected to the scope and one leg of the relay/motor coil; the probe s ground was connected to the other relay coil/motor wire. The scope was triggered on the pulse and waveforms printed. When suppression was introduced into the circuit, it was placed directly on the relay coils/motor lead wires. The axial TransGuard and capacitors had a 19mm (3 4") total lead length in each case. Upon careful consideration, it was determined that this was a fairly common lead length for such applications. SUMMARY GEARED MOTOR The Cramer geared motor was tested while running (under load) to determine its on state noise as well as under loaded turn off conditions. Both TransGuards and ceramic capacitors were tested to determine the level of protection they offer. A 14V axial TransGuard provided the best protection during running and turn off. The VA114D3 TransGuard cut the 6V unprotected turn off voltage spike to 3V. It also cut the on state noise to 4.V pk-pk due to its internal capacitance. The following is a summary of measured voltages (scope traces are shown in Figures 1, 1A, 2, 2A). Transient Transient Transient Transient without with with with 14v Test Condition Protection.1µF cap.1µf cap TransGuard Geared motor at turn off 6V 32V 48V 3V Geared motor during running 12V pk-pk 4.V pk-pk 4.V pk-pk 4.V pk-pk Fig. 1. Geared Motor Transient at Turnoff without protection 6 V Gear Motor 2 V/Division Tek Stop: 5.MS/s 251 Acqs [ T ] 1 Fig. 1A. Geared Motor Transient at Turnoff with 14 V TransGuard 3 V 1 V/Division Tek Stop: 5.MS/s 64 Acqs [ T ] 1 T T Fig. 2. Geared Motor Running noise without protection 12 V pk-pk 2 V/Division Tek Run: 5.MS/s Sample [ T ] 1 Ch1 2. V M 1.μs Ch V 5 Jul ::39 T Fig. 2A. Geared Motor Running with 14 V TransGuard 4 V pk-pk 2 V/Division Ch1 1. V M 1.μs Ch V 5 Jul :7:57 Tek Stop: 5.MS/s 147 Acqs [ T ] 1 T Ch1 2 V M 1ns Ch1 364mV 5 Jul :7:6 Ch1 2mV M 1ns Ch1 164mV 5 Jul :43:56 93

96 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: Motor and Relay Application Study BISCUT FAN The Comair 24V and 12V biscut fans were tested only for transients at turn off. Results of those tests are shown in the table at the right (as well as slope traces 3, 3A, 4, 4A). Transient Transient Transient Transient without with with with Motor Type Protection.1µF cap.1µf cap TransGuard 24V Fan 165V 12V 14V 65V (1) 12V Fan 6V 52V 64V 3V (2) (1) VA13D65 TransGuard / (2) VA114D3 TransGuard Fig V Biscut Fan without protection 165 V Biscut 5 V/Division Tek Stop: 5.MS/s 482 Acqs [ T ] Fig. 3A. 24 V Biscut Fan with 3 V TransGuard 65 V 5 V/Division Tek Stop: 5.MS/s 56 Acqs [ T ] 1 T 1 T Ch1 5. V M 1.μs Ch1-6.1 V 7 Jul :3:28 Ch1 5. V M 1.μs Ch1-5.8 V 7 Jul :6:48 Fig V Biscut Fan without protection 6 V 2 V/Division Tek Stop: 5.MS/s 58 Acqs [ T ] Fig. 4A. 12 V Biscut Fan with 14 V TransGuard 3 V 2 V/Division Tek Stop: 5.MS/s 265 Acqs [ T ] 1 1 T T Ch1 2. V M 1.μs Ch V 7 Jul :22:6 Ch1 2. V M 1.μs Ch V 7 Jul :27:56 94

97 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: Motor and Relay Application Study RELAYS The 12V and 24V relays were tested only for transients at turn off. The results of those tests are shown in the table at the right (as well as scope traces 5, 5A, 6, 6A). Transient Transient Transient Transient without with with with Relay Type Protection.1µF cap.1µf cap TransGuard 24V 44V 24V 28V 28V (3) 12V 15V 63V 1V 3V (4) (3) VA126D58 TransGuard / (4) VA114D3 TransGuard Fig V Relay Transient without protection 44 V 1 V/Division Tek Stop: 5.MS/s 75 Acqs [ T ] Fig. 5A. 24 V Relay Transient with 26 V TransGuard 1 V/Division Tek Stop: 5.MS/s 6873 Acqs [ T ] 1 1 T T Ch1 1. V Ch2 1mV M 1.μs Ch1-1.3 V 7 Jul :21:47 Ch1 1. V M 1.μs Ch1-52mV 7 Jul :45:31 Fig V Relay Transient without protection 15 V 5 V/Division Tek Stop: 5.MS/s 51 Acqs [ T ] Fig. 6A. 12 V Relay Transient with 14 V TransGuard 3 V 5 V/Division Tek Stop: 5.MS/s 154 Acqs [ T ] 1 1 T T Ch1 5. V Ch2 1mV M 1.μs Ch1-3.6 V 7 Jul :47:37 Ch1 5. V Ch2 1mV M 1.μs Ch1-3. V 7 Jul :5: CONCLUSIONS TransGuards can clamp the wide range of voltages coming from small/medium motors and relays due to inductive discharge. In addition, TransGuards capacitance can help reduce EMI/RFI. Proper selection of the TransGuards voltage is critical to clamping efficiency and correct circuit operation. 95

98 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: Multilayer Varistors In Automobile MUX Bus Applications The current trend in automobiles is towards increased performance, comfort and efficiency. To achieve these goals, automobile companies are incorporating an ever increasing array of electronics into cars. As the electronic content within cars increases, auto manufacturers are utilizing multiplex bus designs to network all the sensors to a central point (usually the engine control unit [ECU]). Multiplex lines save wiring harness weight and decrease the harness complexity, while allowing higher communication speeds. However, the multiplex structure tends to increase the occurrence and severity of Electromagnetic Interference (EMC) and Electrostatic Discharge (ESD). Multilayer varistors (MLVs) are a single component solution for auto manufacturers to utilize on multiplex nodes to eliminate both ESD and EMC problems. MLVs also offer improved reliability rates (FIT rates <1 failure/billion hours) and smaller designs over traditional diode protection schemes. TYPICAL MUX NODE APPLICATION There are a variety of SAE recommended practices for vehicle multiplexing (J-185, J-1939, J-178, J-1587, CAN). Given the number of multiplexing specifications, it is easy to understand that bus complexity will vary considerably. Each node has an interface circuit which typically consists of a terminating resistor (or sometimes a series limiting resistor), back to back Zener diodes (for over voltage protection) and an EMC capacitor. Such a method is compared to that of a multilayer varistor in Figure 1. XCVR BUS XCVR BUS MLV PROTECTION METHOD SINGLE COMPONENT SOLUTION To more clearly understand the functional structure of a MLV, see the equivalent electrical model shown in Figure 2. MULTIPLE ELECTRODES YIELD A CAPACITANCE THE CAPACITANCE CAN BE USED IN DECOUPLING CAPACITANCE CAN BE SELECTED FROM 3pF TO 47pF L B R V C E R I L B C E R V R I EMC CAP DIODE PROTECTION METHOD THREE COMPONENT SOLUTION Figure 1. Comparison of past node protection methods to MLV node protection methods. BODY INDUCTANCE DEVICE CAPACITANCE VOLTAGE VARIABLE RESISTOR INSULATION RESISTANCE As the schematic in Figure 1 illustrates, the implementation of MLV protection methods greatly simplifies circuit layout, saves PCB space and improves system reliability. The MLV offers many additional electrical improvements over the Zener/passive schemes. Among those advantages are higher multiple strike capability, faster turn on time and larger transient overstrike capability. Further clarification on the types of varistors compared to the performance of Zener diodes follows. CONSTRUCTION AND PHYSICAL COMPARISON The construction of Zinc Oxide (ZnO) varistors is a well known, relatively straightforward process in which ZnO grains are doped with cobalt, bismuth, manganese and other oxides. The resulting grains have a Schottky barrier at the grain interface and a typical grain breakdown voltage (V b ) of approximately 3.6V per grain. Currently, there are two types of varistors. Single layer varistors (SLVs) an older technology referred to as pressed pill, typically are larger, radial leaded components designed to handle significant power. Multilayer varistors (MLVs) are a relatively new technology packaged in true EIA SMT case sizes. Beyond the ZnO material system and grain breakdown similarity, MLVs and SLVs have little in common. That is, to design a low voltage SLV, the grains must be grown as large as possible to achieve a physically large enough part to be handled in the manufacturing process. Typically it is very difficult to obtain a consistent grain size in a low voltage SLV process. The electrical performance of SLV is affected by inconsistent grain size in two ways. First, low voltage SLVs often exhibit an inconsistent V b and leakage current (I L ) from device to device within a particular manufacturing lot of a given rating. This contributes to early high voltage repetitive strike wear out. Secondly, SLVs with similar voltage and energy ratings as MLVs typically exhibit a lower peak current capability due in part to increased resistance of the long current path of the large grains. This contributes to early repetitive high current wear out. At higher voltages, the grain size variations within SLVs play a much smaller percentage role in V b and leakage current values. As a result, SLVs are the most efficient cost effective way to suppress transients in high voltages (e.g., 115 VAC, 22 VAC). 96 Figure 2. TransGuard Equivalent Model.

99 TransGuard AVX Multilayer Ceramic Transient Voltage Suppressors Application Notes: Multilayer Varistors In Automobile MUX Bus Applications MLV MANUFACTURE The construction of a MLV was made possible by employing a variety of advanced multilayer chip capacitors (MLCC) manufacturing schemes coupled with a variety of novel and proprietary ZnO manufacturing steps. In the MLCC process, thin dielectrics are commonly employed to obtain very large capacitance values. It is that capability to design and manufacture multilayer structures with dielectric thicknesses of 1 mil that allows MLVs to be easily made with operating/ working voltages (V wm ) as low as 3.3V (for use in next generation silicon devices). Once a particular working voltage has been determined (by altering the ZnO dielectric thickness), the multilayer varistor's transient energy capability is determined by the number of layers of dielectric and electrodes. It is, therefore, generally easy to control the grain size and uniformity within a MLV due to the relative simplicity of this process. MLVs exhibit capacitance due to their multiple electrode design and the fact that ZnO is a ceramic dielectric. This capacitance can be utilized with the device s series inductance to provide a filter to help limit EMI/RFI. The equivalent model of a MLV is shown in Figure 2. MLVs are primarily used as transient voltage suppressors. In their on state, they act as a back-to-back Zener, diverting to ground any excess, unwanted energy above their clamping voltage. In their off state, they act as an EMC capacitor (capacitance can be minimized for high speed applications). A single MLV, therefore, can replace the diode, capacitor and resistor array on multiplex node applications. Any TVS will see a large number of transient strikes over its lifetime. These transient strikes will result from different events such as well known ESD HBM, IC MM, alternator field decay, load dump models and uncontrolled random events. It is because of the repetitive strikes that all TVS suppressors should be tested for multiple strike capability. Typically, a TVS will fail due to high voltage, high current or over-energy strikes. High voltage repetitive strikes are best represented by IEC kV waveforms. MLVs demonstrate a greatly superior capability to withstand repetitive ESD high voltage discharge without degradation. Repetitive Strike Performance 8X2 μs 15A High current repetitive strikes are represented by 8x2μs 15A waveforms. A comparison between MLVs, SLVs and SiTVS is shown in Figures 3A, B, C respectively. SILICON TVS MANUFACTURE The construction of a silicon TVS departs dramatically from that of either single layer varistor or multilayer varistor construction. Devices are generally produced as Zener diodes with the exception that a larger junction area is designed into the parts and additional testing was likely performed. After the silicon die is processed in accordance to standard semi-conductor manufacturing practice, the TVS die is connected to a heavy metal lead frame and molded into axial and surface mount (SMT) configuration. MLVs COMPARED TO DIODES The response time for a silicon diode die is truly subnanosecond. The lead frame into which the die is placed and the wire bonds used for die connections introduce a significant amount of inductance. The large inductance of this packaging causes a series impedance that slows the response time of SiTVS devices. A best case response time of 8nS on SOT23 and a 1.5nS to 5nS response time on SMB and SMC products respectively are rather typical. MLVs turn on time is <7nS. MLVs turn on time is faster than SiTVS and that fast turn on time diverts more energy and current away from the IC than any other protection device available. CONCLUSION 15 AMP Current Repetitive Strike Comparison The technology to manufacture MLVs exists and allows the manufacture of miniature SMT surge suppressors. MLVs do not have the wear out failure mode of first generation (single layer) varistors. In fact, MLVs exhibit better reliability numbers than that of TVS diodes. MLVs are a viable protection device for auto multiplex bus applications. Written by Ron Demcko Originally printed in EDN PRODUCTS EDITION December 1997 by CAHNERS PUBLISHING COMPANY Repetitive Strike Performance 8X2 μs 15A Repetitive Strike Performance 8X2 μs 15A Energy (J) v 48v3v 26v 18v Vwm 56v 48v Energy (J) 28v 22v18v 5.5v 8v 14v Vwm.6 Energy (J) v 11v 5.v 18.8v 15v 13v Vwm Figure 3A. Multilayer Varistor. Figure 3B. Single Layer Varistor. Figure 3C. Silicon TVS. 97

100 TransGuard PACKAGING Chips Axial Leads 98

101 Paper Carrier Configuration 8mm Tape Only T D P 2 P 1 PITCHES CUMULATIVE TOLERANCE ON TAPE ±.2mm (±.8) E 1 BOTTOM COVER TAPE TOP COVER TAPE B F E 2 W Tape Size P1 See Note 4 T 1 T 1 CAVITY SIZE SEE NOTE 1 8mm Paper Tape Metric Dimensions Will Govern CONSTANT DIMENSIONS A CENTER LINES OF CAVITY E 2 Min. F W A B T 8mm 4. ± ± See Note 1 (.157 ±.4) (.246) (.138 ±.2) ( ) P 1 G User Direction of Feed mm (inches) Tape Size D E P P 2 T 1 G. Min. R Min. 8mm ( ) VARIABLE DIMENSIONS 1.75 ±.1 4. ±.1 2. ±.5 (.69 ±.4) (.157 ±.4) (.79 ±.2) (.984) (.4) (.3) See Note 2 Max. Min. Min. mm (inches) 1.1mm (.43) Max. for Paper Base Tape and 1.6mm (.63) Max. for Non-Paper Base Compositions NOTES: 1. The cavity defined by A, B, and T shall be configured to provide sufficient clearance surrounding the component so that: a) the component does not protrude beyond either surface of the carrier tape; b) the component can be removed from the cavity in a vertical direction without mechanical restriction after the top cover tape has been removed; c) rotation of the component is limited to 2º maximum (see Sketches A & B); d) lateral movement of the component is restricted to.5mm maximum (see Sketch C). 2. Tape with or without components shall pass around radius R without damage. 3. Bar code labeling (if required) shall be on the side of the reel opposite the sprocket holes. Refer to EIA If P1 = 2.mm, the tape may not properly index in all tape feeders. Top View, Sketch "C" Component Lateral.5mm (.2) Maximum.5mm (.2) Maximum Bar Code Labeling Standard AVX bar code labeling is available and follows latest version of EIA

102 Embossed Carrier Configuration 8 & 12mm Tape Only T 2 T DEFORMATION BETWEEN EMBOSSMENTS D P 2 P 1 PITCHES CUMULATIVE TOLERANCE ON TAPE ±.2mm (±.8) EMBOSSMENT E 1 B 1 TOP COVER TAPE K A B F E 2 W S 1 T 1 CENTER LINES OF CAVITY B 1 IS FOR TAPE READER REFERENCE ONLY INCLUDING DRAFT CONCENTRIC AROUND B 8 & 12mm Embossed Tape Metric Dimensions Will Govern CONSTANT DIMENSIONS P 1 MAX. CAVITY SIZE - SEE NOTE 1 User Direction of Feed D 1 FOR COMPONENTS 2. mm x 1.2 mm AND LARGER (.79 x.47) mm (inches) Tape Size D E P P 2 S 1 Min. T Max. T 1 8mm and 12mm ( ) 1.75 ±.1 4. ±.1 2. ± (.69 ±.4) (.157 ±.4) (.79 ±.2) (.24) (.24).1 (.4) Max. VARIABLE DIMENSIONS mm (inches) Tape Size B 1 D 1 E 2 F P 1 R T 2 W A B K Max. Min. Min. Min. Max. See Note 5 See Note 2 8mm 12mm ±.5 4. ± Max. 8.3 (.171) (.39) (.246) (.138 ±.2) (.157 ±.4) (.984) (.98) (.327) ±.5 4. ± Max (.323) (.59) (.44) (.217 ±.2) (.157 ±.4) (1.181) (.256) (.484) See Note 1 See Note 1 NOTES: 1. The cavity defined by A, B, and K shall be configured to provide the following: Surround the component with sufficient clearance such that: a) the component does not protrude beyond the sealing plane of the cover tape. b) the component can be removed from the cavity in a vertical direction without mechanical restriction, after the cover tape has been removed. c) rotation of the component is limited to 2º maximum (see Sketches D & E). d) lateral movement of the component is restricted to.5mm maximum (see Sketch F). 2. Tape with or without components shall pass around radius R without damage. 3. Bar code labeling (if required) shall be on the side of the reel opposite the round sprocket holes. Refer to EIA B1 dimension is a reference dimension for tape feeder clearance only. 5. If P1 = 2.mm, the tape may not properly index in all tape feeders. Top View, Sketch "F" Component Lateral Movements.5mm (.2) Maximum.5mm (.2) Maximum 1