High Temperature Stability and High Reliability Conditions FEATURES
|
|
- Susan Walters
- 5 years ago
- Views:
Transcription
1 Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218 Compatible PRIMARY CHARACTERISTICS V BR 11.1 V to 52.8 V P PPM (1 x μs) 66 W P PPM (1 x 1 μs) 52 W P D 8 W V WM 1 V to 43 V I FSM 7 A T J max. 175 C Polarity Uni-directional Package DO-218AC FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T J = 175 C capability suitable for high reliability and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop High surge capability Meets ISO surge specification (varied by test condition) Meets MSL level 1, per J-STD-2, LF maximum peak of 245 C AEC-Q11 qualified - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V- flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q11 qualified Terminals: matte tin plated leads, solderable per J-STD-2 and JESD 22-B12 HE3 suffix meets JESD 21 class 2 whisker test Polarity: heatsink is anode RATINGS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT with 1/ μs waveform Peak pulse power dissipation P PPM 66 W with 1/1 μs waveform 52 Power dissipation on infinite heatsink at T C = 25 C (fig. 1) P D 8. W Peak pulse current with 1/ μs waveform I (1) PPM See next table A Peak forward surge current 8.3 ms single half sine-wave I FSM 7 A Operating junction and storage temperature range T J, T STG -55 to +175 C (1) Non-repetitive current pulse derated above T A = 25 C Revision: 3-Dec Document Number: 87734
2 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) DEVICE TYPE BREAKDOWN V BR (V) MIN. NOM. MAX. TEST CURRENT I T (ma) STAND-OFF V WM (V) REVERSE LEAKAGE AT V WM I D (μa) REVERSE LEAKAGE AT V WM T J = 175 C I D (μa) MAX. PEAK PULSE CURRENT AT 1/ μs WAVEFORM (A) CLAMPING AT I PPM V C (V) TYPICAL TEMP. COEFFICIENT OF V BR (1) T (%/ C) SM8S1AT SM8S11AT SM8S12AT SM8S13AT SM8S14AT SM8S15AT SM8S16AT SM8S17AT SM8S18AT SM8S2AT SM8S22AT SM8S24AT SM8S26AT SM8S28AT SM8S3AT SM8S33AT SM8S36AT SM8S4AT SM8S43AT For all types maximum V F = 1.8 V at I F = 1 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (2) To calculate V BR vs. junction temperature, use the following formula: V BR at T J = V BR at 25 C x (1 + T x (T J - 25)) THERMAL CHARACTERISTICS (T C = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R JC.9 C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM8S1ATHE3/I (1) 2.65 I 75 13" diameter plastic tape and reel, anode towards the sprocket hole (1) AEC-Q11 qualified Revision: 3-Dec Document Number: 87734
3 RATINGS AND CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) 8. 1 Power Dissipation (W) Reverse Surge Power (W) Case Temperature ( C) Fig. 1 - Power Derating Curve 1 1 Pulse Width (ms) - ½ I PP Exponential Waveform Fig. 4 - Reverse Power Capability 6 1 Load Dump Power (W) Case Temperature ( C) Fig. 2 - Load Dump Power Characteristics (1 ms Exponential Waveform) Transient Thermal Impedance ( C/W) t - Pulse Width (s) R θja R θjc Fig. 5 - Typical Transient Thermal Impedance Input Peak Pulse Current (%) t r = 1 μs Peak Value I PPM Half Value - I PPM t d t - Time (ms) T J = 25 C Pulse Width (t d ) is Defined as the Point Where the Peak Current Decays to 5 % of I PPM I PP 2 Fig. 3 - Pulse Waveform C J - Junction Capacitance (pf) Measured at Stand-Off Voltage V WM T J = 25 C f = 1. MHz V sig = 5 mv p-p Measured at Zero Bias V WM - Reverse Stand-Off Voltage (V) Fig. 6 - Typical Junction Capacitance Revision: 3-Dec Document Number: 87734
4 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-218AC.413 (1.5).342 (8.7).374 (9.5).327 (8.3).628 (16.).592 (15.).539 (13.7).524 (13.3).116 (3.).93 (2.4).413 (1.5).374 (9.5) Mounting Pad Layout.15 (3.8).126 (3.2).91 (2.3).67 (1.7).116 (3.).93 (2.4).366 (9.3).343 (8.7).46 (1.3).382 (9.7).366 (9.3).343 (8.7).66 (15.4).583 (14.8) Lead (5.).185 (4.7).138 (3.5).98 (2.5).4 (.1) (NOM.) Lead 2 / metal heatsink.28 (.7).2 (.5).98 (2.5).59 (1.5) Revision: 3-Dec Document Number: 87734
5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-17 1 Document Number: 9
High Temperature Stability and High Reliability Conditions FEATURES. PARAMETER SYMBOL VALUE UNIT with 10/1000 μs waveform Peak pulse power dissipation
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V WM 1 V to 36 V V BR 11.1 V to 44.2 V P PPM (1 x 1 μs) 36 W P PPM (1
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-28AB PRIMARY CHARACTERISTICS V BR 27 V P PPM ( x μs) 36 W P D 5 W V WM 22 V I RSM 7 A I FSM
More informationP4KE6.8A thru P4KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 54 V V BR bi-directional 6.8 V to 44 V P PPM 4 W P D 1.5 W I FSM (uni-directional only)
More informationSurface Mount TRANSZORB Transient Voltage Suppressors
Surface Mount TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V WM (uni-directional) 5.8 V to 459 V V WM (bi-directional) 5.8 V to 185 V V BR (uni-directional) 6.8 V to 540 V V BR (bi-directional)
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V WM 1 V to 43 V V BR 11.1 V to 52.8 V P PPM 3 W P D 6. W I FSM 2 A T
More information5KP8.5A thru 5KP188A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES TYPICAL APPLICATIONS
TRANSZORB Transient Voltage Suppressors P6 PRIMARY CHARACTERISTICS V WM 8.5 V to 188 V V BR 9.4 V to 231 V P PPM 5 W P D 8. W I FSM 5 A T J max. 175 C Polarity Uni-directional Package P6 FEATURES P6 glass
More informationICTE5 thru ICTE18C, 1N6373 thru 1N6386. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.
TRANSZORB Transient Voltage Suppressors Case Style 1.5KE PRIMARY CHARACTERISTICS V WM 5. V to 18 V V BR (uni-directional) 6. V to 21.2 V V BR (bi-directional) 9.2 V to 21.2 V P PPM 1 W P D 6.5 W I FSM
More informationMSP3V3, MSP5.0A. Surface Mount TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES. Series.
Surface Mount TRANSZORB Transient Voltage Suppressors esmp Series Top View Bottom View PRIMARY CHARACTERISTICS V WM 3.3 V to 5. V V BR 4.1 V to 7.7 V P PPM 15 W T J max. 15 C Polarity Uni-directional Package
More informationHigh Power Density Surface Mount TRANSZORB Transient Voltage Suppressors
High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V BR 6.4 V to 49.1 V V WM 5.0 V to 40 V P PPM 0 W I FSM (uni-directional only) 40 A T J max. 1 C Polarity
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DESIGN SUPPORT TOOLS Models Available Top View Cathode esmp Series Bottom View PRIMARY CHARACTERISTICS
More informationBi-directional 1500 W TVS in TO-277 (SMPC) Package FEATURES
Surface Mount PAR Transient Voltage Suppressors Bi-directional 1500 W TVS in TO-277 (SMPC) Package esmp Series Terminal 1 Terminal 2 FEATURES Junction passivation optimized PAR design T J = 185 C capability
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DESIGN SUPPORT TOOLS Models Available Top View Cathode esmp Series Bottom View PRIMARY CHARACTERISTICS
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions SMB (DO-214AA) PRIMARY CHARACTERISTICS V BR 6.8 V to 43 V V WM 5.8 V to 36.8 V P PPM 600 W I FSM
More informationSurface Mount TRANSZORB Transient Voltage Suppressors
Surface Mount TRANSZORB Transient Voltage Suppressors esmp Series PRIMARY CHARACTERISTICS V BR uni-directional 4. V to 44.2 V V WM 3.3 V to 36 V P PPM 400 W I FSM 40 A T J max. 150 C Polarity Uni-directional
More informationHigh Power Density Surface Mount PAR Transient Voltage Suppressors
High Power Density Surface Mount PAR Transient Voltage Suppressors esmp Series DO-22AA (SMP) PRIMARY CHARACTERISTICS V BR 6.8 V to 43 V V WM 5.8 V to 36.8 V P PPM (for V BR 6.8 V) 25 W P PPM (for V BR
More informationNew Product. High Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V WM 1 V to 43 V V BR 11.1 V to 52.8 V P PPM 3 W P D 6. W I FSM 2 A T
More informationSurface Mount TRANSZORB Transient Voltage Suppressors
Surface Mount TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V WM 5.80 V to 188 V V BR uni-directional 6.8 V to 220 V V BR bi-directional 6.8 V to 220 V P PPM 600 W P D 5.0 W I FSM (uni-directional
More informationP6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 540 V V BR bi-directional 6.8 V to 440 V P PPM 600 W P D 5.0 W I FSM (uni-directional
More informationHigh Current Density Surface Mount Schottky Barrier Rectifiers
High Current Density Surface Mount Schottky Barrier Rectifiers esmp Series 2 Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Low forward
More informationSurface Mount TRANSZORB Transient Voltage Suppressors
Surface Mount TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V BR 6.8 V to 220 V V WM 5.8 V to 188 V P PPM 600 W P D 5.0 W I FSM (uni-directional only) A T J max. 150 C Polarity Uni-directional,
More informationSA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.0 V to 170 V V BR (uni-directional) 6.4 V to 209 V V BR (bi-directional) 6.4 V to 209 V P PPM 500 W P D 3.0 W I FSM
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.0 A V RRM 200 V I FSM 40 A t rr 25 ns V F 0.71 V T J max. 175 C Package Diode variations Single die FEATURES Glass passivated
More informationSA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.0 V to 170 V P PPM 500 W P D 3.0 W I FSM (uni-directional only) 70 A T J max. 175 C DEVICES FOR BI-DIRECTION APPLICATIONS
More informationHigh Current Density Surface Mount Schottky Barrier Rectifiers
SSP3C, SSP4C High Current Density Surface Mount Schottky Barrier Rectifiers esmp Series 2 Anode FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Low forward voltage
More informationHigh Current Density Surface Mount Dual Common Cathode Schottky Rectifier
High Current Density Surface Mount Dual Common Cathode Schottky Rectifier esmp Series K 2 K Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Available Ideal for automated placement
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions Top View SlimSMA TM DO-22AC PRIMARY CHARACTERISTICS V BR 6.8 V to 5 V 5.8 V to 43.6 V P PPM (
More informationSMD Photovoltaic Solar Cell Protection Rectifier
SMD Photovoltaic Solar Cell Protection Rectifier esmp Series 2 Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Ideal for automated placement Glass passivated pellet chip junction
More informationSurface Mount Power Voltage-Regulating Diodes
Surface Mount Power Voltage-Regulating Diodes DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Low Zener impedance Low regulation factor Meets MSL level, per J-STD-2, if maximum
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 5 V, V, 15 V, 2 V I FSM A t rr 2 ns V F.9 V T J max. 15 C Package Diode variations Single FEATURES Glass passivated
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.5 A V RRM V I FSM 3 A I R 5. μa t rr 75 ns V F 1.7 V E R 2 mj T J max. 15 C Package Diode variations Single FEATURES Low profile package
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V40PWM2C High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TMBS esmp Series 2 SlimDPAK (TO-252AE) PIN K K FEATURES Very low profile - typical
More informationGlass Passivated Ultrafast Plastic Rectifier
Glass Passivated Ultrafast Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability condition Cavity-free glass-passivated junction Ideal for printed circuit
More informationSurface Mount Glass Passivated Rectifier
Surface Mount Glass Passivated Rectifier DO-24AC (SMA) PRIMARY CHARACTERISTICS I F(AV) 2.0 A V RRM 200 V, 400 V, 600 V, 800 V, 00 V I FSM 50 A I R 5.0 μa V F at I F = 2.0 A (T A = 25 C) 0.90 V T J max.
More informationDual Common-Cathode Ultrafast Rectifier
Dual Common-Cathode Ultrafast Rectifier TO-22AB BYV32 Series PIN PIN 3 CASE 2 3 TO-263AB ITO-22AB 2 3 BYVF32 Series PIN PIN 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.33 V at I F = A TMBS 2 VBT6045CBP PIN PIN 2 HEATSIN PRIMARY CHARACTERISTICS I F(AV) 2 x 30 A V RRM 45 V I FSM
More informationHigh Current Density Surface Mount High Voltage Schottky Rectifiers
SSPH9, SSPH High Current Density Surface Mount High Voltage Schottky Rectifiers esmp Series 2 Anode Cathode Anode 2 FEATURES Power pack Available Very low profile - typical height of. mm Ideal for automated
More informationHigh Current Density Surface Mount High Voltage Schottky Rectifier
High Current Density Surface Mount High Voltage Schottky Rectifier SS8PH9, SS8PH0 FEATURES esmp Series Very low profile - typical height of. mm Available Ideal for automated placement Guardring for overvoltage
More informationSMD Photovoltaic Solar Cell Protection Schottky Rectifier
SS5P3S SMD Photovoltaic Solar Cell Protection Schottky Rectifier esmp Series Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 5 A V RRM 30 V I FSM 80 A E AS 0 mj V F at I F = 5 A 0.4 V T J max. 50 C
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V BR 6.8 V to 43 V V WM 5.50 V to 36.8 V P PPM 600 W I FSM 75 A T J max.
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier PRIMARY CHARACTERISTICS I F(AV) 1.5 A V RRM 1 V I FSM 3 A I R 5. μa t rr 75 ns V F 1.7 V E R 2 mj T J max. 15 C Package Circuit configuration Single FEATURES Low profile
More informationUF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier
UF400, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier FEATURES Glass passivated chip junction Ultrafast reverse recovery time Low forward voltage drop Low switching losses,
More informationGlass Passivated Junction Plastic Rectifier
N400GP, N4002GP, N4003GP, N4004GP, N4005GP, N4006GP, N4007GP Glass Passivated Junction Plastic Rectifier SUPERECTIFIER DO-204AL (DO-4) FEATURES Superectifier structure for high reliability application
More informationFEATURES. PARAMETER SYMBOL V8PAM10 UNIT Device marking code Maximum repetitive peak reverse voltage V RRM 100 V
Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier esmp Series Top View Bottom View Anode Cathode FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V5PL50 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.8 V at I F = 5 A TMBS esmp Series Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 5 A V RRM 50 V I
More informationGeneral Purpose Plastic Rectifier
General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) FEATURES Low forward voltage drop Low leakage current High forward surge capability Solder dip 275 C max. s, per JESD 22-B6 Compliant to
More informationHigh Voltage Schottky Rectifier
MB0H90, MB0H, MF0H High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance ITO-220AC D 2 PA (TO-263AB) 2 2 MB0H90 MF0H MB0H PIN PIN PIN 2 PIN 2 HEATSIN PRIMARY
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS esmp Series Top View SlimSMA (DO-22AC) Cathode DESIGN SUPPORT TOOLS Models Available Bottom View PRIMARY CHARACTERISTICS Anode click logo to get
More informationHigh Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V BR 6.8 V to 47 V V WM 5. V to 40.2 V P PPM 10 W I FSM 200 A T J max.
More informationDual Common Cathode High Voltage Schottky Rectifier
Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB MBR20HCT PIN PIN 3 PRIMARY CHARACTERISTICS I F(AV) 2 x 0 A V RRM V I FSM 250
More informationUltrafast Rectifier FEATURES
Ultrafast Rectifier TO-AC ITO-AC BYW9 Series BYWF9 Series PIN PIN CASE D PA (TO-63AB) BYWB9 Series PIN HEATSIN DESIGN SUPPORT TOOLS click logo to get started FEATURES Power pack Glass passivated pellet
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS esmp Series Top View Bottom View SlimSMA (DO-22AC) Cathode Anode FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement
More informationSchottky Barrier Rectifier
Schottky Barrier Rectifier TO-0AC ITO-0AC FEATURES Power pack Low power loss, high efficiency Low forward voltage drop High forward surge capability High frequency operation CASE D PA (TO-63AB) MBRF045
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.29 V at I F = 5 A TMBS esmp Series 2 Anode Cathode Anode 2 PRIMARY CHARACTERISTICS I F(AV) 25 A V RRM 60 V I FSM
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.34 V at I F = 4 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8.0 A V RRM
More informationSurface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier esmp Series Top view Bottom view DO-29AB (SMF) PRIMARY CHARACTERISTICS I F(AV) 2.0 A V RRM 0 V I FSM 50 A V F at I F = 2.0 A () 0.63 V T J max. 75 C Package DO-29AB
More informationSMD Photovoltaic Solar Cell Protection Schottky Rectifier
SSP4S SMD Photovoltaic Solar Cell Protection Schottky Rectifier PRIMARY CHARACTERISTICS I F(AV) A V RRM 40 V I FSM 80 A E AS 0 mj V F at I F = A 0.43 V T J max. 50 C Package Diode variations Single die
More informationDual Common Cathode Ultrafast Plastic Rectifier
6xT, F6xT, B6xT Dual Common Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV). A V RRM 5 V, V, 5 V, 2 V I FSM 3 A t rr 5 ns V F at I F.92 V T J max. 5 C Package SMA (DO-24AC) Diode variations
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
www.vishay.com Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.4 V at I F = 5 A VBT045BP-E3 TMBS DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS
More informationDual High-Voltage Trench MOS Barrier Schottky Rectifier
V60D0C-M3, V60D0CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.36 V at I F = 5 A 2 TMBS esmp Series Top View K PIN V60D0C Bottom View K FEATURES Trench MOS Schottky technology
More informationSurface Mount Schottky Barrier Rectifier
Surface Mount Schottky Barrier Rectifier esmp Series Top view Bottom view SMF (DO-219AB) Cathode Anode FEATURES Low profile package Available Ideal for automated placement Low forward voltage drop, low
More informationSurface Mount Glass Passivated Junction Rectifier
-xxx, GL4x Surface Mount Glass Passivated Junction Rectifier SUPERECTIFIER DO-23AB PRIMARY CHARACTERISTICS I F(AV).0 A V RRM (-xxx, GL4x) 50 V to 00 V, 50 V to 600 V I FSM 30 A I R μa E AS 5 mj V F. V,.2
More informationPhotovoltaic Solar Cell Protection Schottky Rectifier
Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F = 0.30 V at I F = 5.0 A FEATURES TMBS Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
More informationFast Switching Avalanche Surface Mount Rectifiers
Fast Switching Avalanche Surface Mount Rectifiers esmp Series Cathode 2 Anode Anode 2 FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Glass passivated pellet chip
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS SMPA TM Top View Bottom View DO-22BC (SMPA) FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier DO-24AB (SMC) PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 3 V, 4 V I FSM A t rr 35 ns V F at I F. V T J max. 5 C Package DO-24AB (SMC) Diode variations Single die
More informationUltrafast Plastic Rectifier
Ultrafast Plastic Rectifier 6xT, F6xT, B6xT TO-0AC 6xT Series PIN CASE ITO-0AC F6xT Series PIN D PA (TO-63AB) B6xT Series PIN HEATSIN FEATURES Power pack Glass passivated pellet chip junction Ultrafast
More informationSurface Mount Ultra Fast Rectifier
USA, USB, USD, USG, USJ, USK, USM Surface Mount Ultra Fast Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV).0 A 50 V, 0 V, 200 V, 400 V, 600 V, V RRM 800 V, 00 V I FSM 30 A t rr 50 ns, 75 ns V F
More informationPhotovoltaic Solar Cell Protection Schottky Rectifier
VSB545-M3 Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F =.33 V at I F = 5. A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency
More informationUltrafast Plastic Rectifier
8xT, F8xT, B8xT Ultrafast Plastic Rectifier TO-0AC ITO-0AC FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency 8xT PIN F8xT PIN Low leakage
More informationHigh Current Density Surface Mount Ultrafast Rectifiers
High Current Density Surface Mount Ultrafast Rectifiers esmp Series PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 0 V, 50 V, 200 V t rr 25 ns V F 0.90 V T J max. 75 C Package Diode variations Single die FEATURES
More informationUltrafast Avalanche Surface Mount Rectifiers
Ultrafast Avalanche Surface Mount Rectifiers esmp Series FEATURES Very low profile - typical height of. mm Available Ideal for automated placement Glass passivated pellet chip junction Fast reverse recovery
More informationSurface Mount Ultrafast Plastic Rectifier
Surface Mount Ultrafast Plastic Rectifier SMC (DO-24AB) PRIMARY CHARACTERISTICS I F(AV) 3. A V RRM 4 V, 6 V I FSM 25 A t rr 5 ns V F.5 V T J max. 75 C Package SMC (DO-24AB) Diode variation Single FEATURES
More informationFEATURES. Package. PARAMETER SYMBOL PB3506 PB3508 PB3510 UNIT Maximum repetitive peak reverse voltage V RRM V 35 T A = 25 C (2) 4.
PB356, PB358, PB35 Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single
More informationSurface-Mount Glass Passivated Rectifier
Surface-Mount Glass Passivated Rectifier DESIGN SUPPORT TOOLS Models Available Top View Cathode esmp Series Bottom View PRIMARY CHARACTERISTICS Anode click logo to get started I F(AV).0 A V RRM 400 V,
More informationHigh-Voltage Trench MOS Barrier Schottky Rectifier
V2050SG, VI2050SG High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.57 V at I F = 5 A TO-220AB V2050SG PIN PIN 2 PIN 3 CASE TMBS TO-262AA K 2 3 2 3 VI2050SG PIN PIN 2 PIN 3 K FEATURES
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
www.vishay.com Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.28 V at I F = 5 A TMBS ITO-220AC PIN PIN 2 PRIMARY CHARACTERISTICS I F(DC) 40 A V RRM 45 V I FSM
More informationHigh Power Density Surface Mount PAR Transient Voltage Suppressors
High Power Density Surface Mount PAR Transient Voltage Suppressors esmp Series DO-22AA (SMP) PRIMARY CHARACTERISTICS V BR 6.8 V to 43 V P PPM (for V BR 6.8 V) 25 W P PPM (for V BR 7.5 V to 12 V) 3 W P
More informationSMC5K10A thru SMC5K85A. Surface Mount TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.
Surface Mount TRANSZORB Transient Voltage Suppressors PRIMARY CHARACTERISTICS V BR 11.1 V to 104 V V WM 10 V to 85 V P PPM 5000 W T J max. 150 C Polarity Uni-directional Package TYPICAL APPLICATIONS Use
More informationEnhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers - ~ ~ + isocink+ Case Style BU PRIMARY CHARACTERISTICS Package BU I F(AV) 5 A V RRM 6 V, 8 V, V I FSM 2 A I R 5 μa V F at I F = 7.5 A.87 V T J max. 5 C Circuit configuration
More informationUltrafast Avalanche Surface Mount Rectifiers
Ultrafast Avalanche Surface Mount Rectifiers DESIGN SUPPORT TOOLS Models Available esmp Series PRIMARY CHARACTERISTICS Cathode I F(AV) 2.0 A V RRM 200 V, 400 V, 600 V I FSM 30 A t rr 75 ns E AS 20 mj V
More informationDual Common Cathode Ultrafast Plastic Rectifier
Dual Common Cathode Ultrafast Plastic Rectifier TO-2AB UGE8xCT PIN PIN 2 3 2 FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency Low
More informationFast Avalanche SMD Rectifier
BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV).5 A V RRM 8 V, V I FSM 3 A I R. μa V F.6 V t rr 2 ns E R 2 mj T J max. 5 C Package SMA (DO-24AC) Diode
More informationDual High Voltage Trench MOS Barrier Schottky Rectifier
V300C, VI300C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.455 V at I F = 5 A TO-220AB 2 3 V300C PIN PIN 2 PIN 3 CASE TMBS TO-262AA K 2 3 VI300C PIN PIN 2 PIN 3 K FEATURES
More informationSurface Mount Trench MOS Barrier Schottky Rectifier
Surface Mount Trench MOS Barrier Schottky Rectifier TMBS SMPA TM Top View Bottom View DO-22BC (SMPA) PRIMARY CHARACTERISTICS I F(AV) 3.0 A V RRM 50 V I FSM 80 A V F at I F = 3.0 A (T A = 25 C) 0.40 V T
More informationHigh Voltage Glass Passivated Junction Plastic Rectifier
High Voltage Glass Passivated Junction Plastic Rectifier SUPERECTIFIER FEATURES Superectifier structure for high reliability application Cavity-free glass-passivated junction Low leakage current High forward
More informationSurface Mount Standard Rectifiers
Surface Mount Standard Rectifiers Top view esmp Series DO-29AB (SMF) PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 200 V, 400 V, 600 V I FSM 25 A V F at I F =.0 A (T A = 25 C) 0.85 V I R 5 μa T J max. 75 C
More informationMSP5.0A. Surface Mount TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. New Product
MSP5.A Surface Mount TRANSZORB Transient Voltage Suppressors esmp TM Series Top View Bottom View MicroSMP PRIMARY CHARACTERISTICS V WM 5. V P PPM W I FSM 25 A T J max. 5 C FEATURES Very low profile - typical
More informationHigh Current Density Surface Mount Glass Passivated Rectifiers
SPB, SPD, SPG, SPJ, SPK, SPM High Current Density Surface Mount Glass Passivated Rectifiers esmp Series DO-22AA (SMP) FEATURES Very low profile - typical height of. mm Available Ideal for automated placement
More informationHigh Current Density Surface Mount Dual Common Cathode Schottky Rectifiers
High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers FEATURES esmp Series Very low profile - typical height of. mm Available Ideal for automated placement Low forward voltage drop,
More informationFEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V
Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package
More informationDual High Voltage Trench MOS Barrier Schottky Rectifier
MBRF9CT-M3, MBRFCT-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ITO-22AB 2 3 PIN PIN 2 PIN 3 PRIMARY CHARACTERISTICS I F(AV) 2 x 5. A V RRM 9 V, V I FSM 2 A V F.75 V T J max. 5 C Package
More informationSurface-Mount Standard Rectifiers
Surface-Mount Standard Rectifiers esmp Series Top view Bottom view SMF (DO-29AB) PRIMARY CHARACTERISTICS I F(AV) 2.0 A V RRM 200 V, 400 V, 600 V I FSM 35 A V F at I F = 2.0 A (T A = 25 C) 0.85 V I R 5
More informationUltrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier SMA (DO-24AC) PRIMARY CHARACTERISTICS I F(AV) 2. A V RRM 5 V, V, 2 V I FSM 35 A I R. μa V F at I F. V t rr 25 ns E R 2 mj T J max. 5 C Package SMA (DO-24AC) Diode variations
More informationHigh Voltage Ultrafast Avalanche SMD Rectifiers
High Voltage Ultrafast Avalanche SMD Rectifiers PRIMARY CHARACTERISTICS I F(AV) DO-24AC (SMA).0 A FEATURES Glass passivated pellet chip junction Low profile package Ideal for automated placement Low reverse
More informationHigh Voltage Schottky Rectifier
MBR0H, MBRF0H, MBRB0H High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-0AC MBR0H PIN CASE MBRB0H PIN D PA (TO-63AB) ITO-0AC MBRF0H PIN HEATSIN FEATURES
More informationV20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.54 V at I F = 5 A TO-220AB V2020SG PIN PIN 2 PIN 3 CASE 2 3 TMBS ITO-220AB 2 3 VF2020SG PIN PIN 2 PIN 3 FEATURES Trench MOS Schottky
More informationV20150SG-E3, VF20150SG-E3, VB20150SG-E3, VI20150SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V2050SG-E3, VF2050SG-E3, VB2050SG-E3, VI2050SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.57 V at I F = 5 A TO-220AB 2 3 V2050SG PIN PIN 2 PIN 3 CASE TMBS ITO-220AB 2 3 VF2050SG
More informationSurface Mount Fast Avalanche Rectifiers
ARPD, ARPG, ARPJ, ARPK, ARPM Surface Mount Fast Avalanche Rectifiers esmp Series DO-22AA (SMP) PRIMARY CHARACTERISTICS I F(AV). A V RRM 2 V, 4 V, 6 V, 8 V, V I FSM 3 A, 25 A t rr 4 ns, 2 ns V F.5 V,.4
More informationDual Common Cathode Schottky Rectifier
Dual Common Cathode Schottky Rectifier TO-220AB MBR20xxCT PIN PIN 3 CASE 2 3 ITO-220AB 2 3 MBRF20xxCT PIN PIN 3 2 FEATURES Power pack Guardring for overvoltage protection Low power loss, high efficiency
More information