COMMON PARTS/MATERIALS, SPACE USE, APPLICATION DATA SHEET FOR

Transcription

1 COMMON PARTS/MATERIALS, SPACE USE, APPLICATION DATA SHEET FOR Part Description Part Number and Type Applicable Specification POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE 2SK452 2SK453 2SK454 2SK455 2SK456 2SK457 2SK458 2SK459 2SK46 2SK427 2SK428 2SK429 JAXA-QTS-23 JAXA-QTS-23/2 February 28 Prepared and Established by Fuji Electric Device Technology Co., Ltd. Issued by Japan Aerospace Exploration Agency

2 This application data sheet was originally written and established in the Japanese language. This application data sheet has been translated into English for international users. Note that this document is a working document for international users. Any discrepancies found in this document should be verified against the latest Japanese document before any significant decisions are made.

3 Page i Revision Log Rev. Date Description February 28 Original

4 Page ii Contents. GENERAL.... Scope....2 Applicable Documents....3 Reference Document SUMMARY OF PRODUCT Externals and Dimensions Net Weight Devices Structure USAGE Absolute Maximum Ratings Recommended Operating Conditions Recommended Reflow Conditions CHARACTERISTICS IN NORMAL CONDITIONS Electrical Characteristics Mechanical and Thermal Characteristics CHARACTERISTIC CURVES IN VARIOUS OPERATING CONDITIONS ENVIRONMENTAL LIMITS Mechanical Vibration Mechanical Shock Constant Acceleration Thermal Shock Electrostatic Discharge Sensitivity Classification Radiation Hardness RELIABILITY Accelerated Test Results Possible Failure Mode STORAGE NOTES OTHERS...58

5 Page COMMON PARTS/MATERIALS, SPACE USE, APPLICATION DATA SHEET FOR. GENERAL. Scope This provides additional detailed information necessary for designing or selecting products not contained in JAXA QTS. Relevant information not covered in this document shall also be considered. Users are responsible for all aspects pertaining to selection and use of the product(s) specified in this document..2 Applicable Documents The latest versions of the following documents are applicable to the device mentioned in this data sheet. JAXA-QTS-23 JAXA-QTS-23/2 MIL-STD-75 JERG Reference Document MIL-PRF-95N Semiconductor Device, High Reliability, Space Use, General Specification for POWER MOSFET, N-CHANNEL, RADIATION HARDENED, HIGH RELIABILITY, SPACE USE, DETAIL SPECIFICATION FOR TEST METHODS FOR SEMICONDUCTOR DEVICES STANDARD FOR SURFACE MOUNT SOLDERING PROCESS PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR 2. SUMMARY OF PRODUCT 2. Externals and Dimensions The case outline and dimensions of the device are shown in Figures -a, -b and -c. The marking of the device is illustrated in Figures 5-a, 5-b and 5-c. 2.2 Net Weight SMD-2 package type ( 2SK452, 2SK455, 2SK458, 2SK427): 3.3g (typ.) SMD- package type ( 2SK453, 2SK456, 2SK459, 2SK428): 2.6g (typ.) SMD-.5 package type ( 2SK454, 2SK457, 2SK46, 2SK429):.g(typ.) 2.3 Devices Structure The device consists of one N-channel enhancement MOSFET chip and a seam-welded hermetic seal package. The internal structure and the cross-section of the device are drawn in Figures 2 through 4.

6 Page 2 Note: All terminals are isolated from the case. Figure -a. Outline and Dimensions of SMD-2 ( 2SK452, 455, 458, 427)

7 Page 3 Note: All terminals are isolated from the case. Figure -b. Outline and dimensions of SMD- ( 2SK453, 456, 459, 428)

8 Page 4 Note: All terminals are isolated from the case. Figure -c. Outline and dimensions of SMD-.5 ( 2SK454, 457, 46, 429)

9 Page 5 Figure 2. Inner structure and cross-section (SMD-2) ( 2SK452, 455, 458, 427)

10 Page 6 Figure 3. Inner structure and cross-section (SMD-) ( 2SK453, 456, 459, 428)

11 Page 7 Figure 4. Inner structure and cross-section (SMD-.5) ( 2SK454, 457, 46, 429)

12 Page 8 Figure 5-a. Marking of SMD-2 ( 2SK452, 455, 458, 427) Figure 5-b. Marking of SMD- ( 2SK453, 456, 459, 428) Figure 5-c. Marking of SMD-.5 ( 2SK454, 457, 46, 429)

13 Page 9 3. USAGE The circuit must be designed to have sufficient margins for the absolute maximum ratings as shown in Table. It is desirable that the device is operated under the recommended operating condition as shown in Table Absolute Maximum Ratings Table. Absolute maximum ratings Part No. (V) (A) (pulse) (A) (V) P D T C =25 o C (W) T ch ( ) ( o C) T stg ( o C) R th(ch-c) ( o C/W) 2SK SK SK SK SK SK ±2 5 to 2SK SK SK SK SK SK Note( ) 7.67 Channel temperature T ch is given by the following equation: T ch =T c + R th(ch-c) x P D where T c : Case temperature ( C) R th(ch-c) : Thermal resistance between channel and case ( C/W) P D : Power dissipation (W)

14 Page 3.2 Recommended Operating Conditions Table 2. Recommended operating conditions Items (DC) (DC) T ch Recommended Values 75% of rated 7% of rated -7.5 to +5V -55 to 25 C 3.3 Recommended Reflow Conditions The reflow soldering of terminals for SMD package shall be performed at 2 C or more for 3 to 6 seconds of pre-heat temperature and at 24 C or below for seconds of peak temperature in accordance with JERG CHARACTERISTICS IN NORMAL CONDITIONS 4. Electrical Characteristics Electrical characteristics are shown in Tables 3a, 3b, 3c and 3d. 4.2 Mechanical and Thermal Characteristics The mechanical and thermal characteristics assured in detail specification are shown in Table 4.

15 Page Part No. 2SK452 2SK453 2SK454 2SK455 2SK456 2SK457 2SK458 2SK459 2SK46 2SK427 2SK428 2SK429 Table 3-a. V (BR)DSS (V) =ma =V Electrical characteristics (T A =+25 C unless otherwise specified) SS (μa) =8% of rated =V I GSS (na) =±2V =V (th) (V) =ma = ( ) (mω) =5% of rated =2V gfs( ) (S) =5% of rated =25V Min. Typ. Max. Typ. Max. Typ. Min.-Max. Typ. Max. Typ. Min. Typ n n n n n n n n n 4n 3n 25n ± Note( ) Pulse test: Pulse width ms, Duty cycle 2%

16 Page 2 Table 3-b. Part No. 2SK452 2SK453 2SK454 2SK455 2SK456 2SK457 2SK458 2SK459 2SK46 2SK427 2SK428 2SK429 Electrical characteristics (T A =+25 C unless otherwise specified) Q GS (nc) Q GD (nc) Q G (nc) t d(on) (ns) t r (ns) t d(off) (ns) t f (ns) =5% of rated, = rated, =2V V DD =5% of rated, = rated, =2V, R G =Ω Max Typ Max Typ Max Typ Max Typ Max Typ Max Typ Max Typ

17 Page 3 Table 3-c. Electrical characteristics (T A =+25 C unless otherwise specified) Part No. 2SK452 2SK453 2SK454 2SK455 2SK456 2SK457 2SK458 2SK459 2SK46 2SK452 2SK453 2SK454 C iss (pf) C oss (pf) C rss (pf) =75V, =V f=mhz Max Typ Max Typ Max Typ Table 3-d. Part No. Electrical characteristics (Body Diode Characteristics) (T A =+25 C unless otherwise specified) V SD ( ) (V) t rr (ns) Q rr (μc) I F = rated =V I F = rated, =V, -di/dt=a/μs, T ch =25 o C Max. Typ. Typ. Typ. 2SK SK SK SK SK SK SK SK SK SK SK SK Note( ) Pulse test: Pulse width ms, Duty cycle 2%

18 Page 4 Test Items Table 4. Mechanical and thermal characteristics Limits and Conditions Temperature Temperature Cycling Thermal Shock Resistance to Soldering heat -55 to 5 C, 5cycles to C, 25cycles 24 C, s Moisture Resistance Salt Atmosphere Mechanical Environment Vibration Shock Constant Acceleration Electrostatic Discharge (ESD) 8 to 98%, 25 to 65 C, cycles 35 C, 24hr, Rate of salt deposit= to 5g/m 2 /24hr 96.m/s 2 (2G), to 2Hz, 4minutes X-Y-Z each orientation, 4 times 47m/s 2 (5G),.5ms X -Y -Y 2 -Z each orientation, 5 times m/s 2 (G) X -Y -Y 2 -Z each orientation, time 2SK452 2SK455 2SK458 2SK427 2SK453 2SK456 2SK459 2SK428 C=pF, R=.5kΩ 2SK454 2SK457 2SK46 2SK429 =±275V =±V =±5V 5. CHARACTERISTIC CURVES IN VARIOUS OPERATING CONDITIONS The characteristic curves are shown in Figures 6 through 4: Figs. 6-8: Characteristic curves of 2SK452 Figs. 9 - : Characteristic curves of 2SK453 Figs. 2-4: Characteristic curves of 2SK454 Figs. 5-7: Characteristic curves of 2SK455 Figs. 8-2: Characteristic curves of 2SK456 Figs. 2-23: Characteristic curves of 2SK457 Figs : Characteristic curves of 2SK458 Figs : Characteristic curves of 2SK459 Figs. 3-32: Characteristic curves of 2SK46 Figs : Characteristic curves of 2SK427 Figs : Characteristic curves of 2SK428 Figs. 39-4: Characteristic curves of 2SK429

19 Page 5 3 Allowable Power Dissipation P D =f(t c ) 9 Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V.V P D [W] V Tc =6.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch.5 Drain-Source On-state Resistance =f(t ch ): =2A, =2V =8V [ ].3 [ ].2 max..2. V 2V 4V. typ T ch Figure 6. Characteristic curves of 2SK452 (/3)

20 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =42A, T ch (th) max. min V Vcc= 26V 65V T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =65V, =2V, R G =, T ch =25 o C 4 C iss t d (off) 3 C oss 2 t r C [pf] 2 t [ns] t d (on) t f C rss Maximum Safe Operating Area =f( ) Single Pulse PW=ms PWms PW=5ms.. Figure 7. Characteristic curves of 2SK452 (2/3)

21 Page 7 4 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=42A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V E AS [mj] 3 2 =7A =26A Avalanche Current I AV =42A starting T ch t AV [sec] Figure 8. Characteristic curves of 2SK452 (3/3)

22 Page 8 2 Allowable Power Dissipation P D =f(t c ) 9 Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V V V 6 P D [W] V T c =4.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch =6V..9 Drain-Source On-state Resistance =f(t ch ): =9.5A, =2V V.7 [ ] V 2V 4V [ ] max. typ T ch Figure 9. Characteristic curves of 2SK453 (/3)

23 Page 9 7. Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =39A, T ch V Vcc= 26V 65V 4.5 max. (th) min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =65V, =2V, R G =, T ch =25 o C 4 t r C iss 3 2 t d (off) C oss C [pf] 2 t [ns] t d (on) C rss t f Maximum Safe Operating Area =f( ) Operation in the area is limited by R DS(om) Single Pulse PW=ms PWms PW=5ms.. Figure. Characteristic curves of 2SK453 (2/3)

24 Page 2 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=39A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V =6A E AS [mj] 5 =24A =39A Avalanche Current I AV starting T ch t AV [sec] Figure. Characteristic curves of 2SK453 (3/3)

25 Page 2 Allowable Power Dissipation P D =f(t c ) 5 Typical Output Characteristics =f( ): 8 s pulse test, T ch 4 3 4V 2V V P D [W] V =6.V T c Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch =6V 8V.2 Drain-Source On-state Resistance =f(t ch ): =7.5A, =2V V 2V [ ].5 4V [ ]. max. typ T ch Figure 2. Characteristic curves of 2SK454 (/3)

26 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =5A, T ch max. 2 4V V cc = 26V 65V (th) min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. ID t=f( ): V DD =65V, =2V, R G =, T ch =25 o C 4 3 C iss 2 t r C [pf] 2 C oss t [ns] t d (on) t d (off) C rss t f Maximum Safe Operating Area =f( ) Operation in the area is limited by R DS(om) Single Pulse PW=ms PWms. PW=5ms. Figure 3. Characteristic curves of 2SK454 (2/3)

27 Page 23 =6A Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ) :V DD =48V, <=5A 2 Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V Single Pulse E AS [mj] 5 =9A =5A Avalanche Current I AV starting T ch t AV [sec] Figure 4. Characteristic curves of 2SK454 (3/3)

28 Page 24 3 Allowable Power Dissipation P D =f(t c ) Typical Output Characteristics =f( ): 8 s pulse test, T ch 9 8 4V 2V V 8.V 2 7 P D [W] V T c =4.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch. Drain-Source On-state Resistance =f(t ch ): =2A, =2V =6V V.7.6 [ ].3.2. V 2V 4V [ ] max. typ T ch Figure 5. Characteristic curves of 2SK455 (/3)

29 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =42A, T ch (th) max V V cc = 4V V 2.5 min T ch Q g [nc] 4 Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C Ciss 3 Typical Switching Characteristics vs. t=f( ): V DD =V, =2V, R G =, T ch =25 o C 3 2 t d (off) C [pf] 2 Coss t [ns] t d (on) t r Crss t f Maximum Safe Operating Area =f( ) Operation in the area is limited by R DS(om) Single Pulse PW=ms PWms. PW=5ms. Figure 6. Characteristic curves of 2SK455 (2/3)

30 Page 26 2 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=42A =7A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V E AS [mj] 5 =26A =42A Avalanche Current I AV starting T ch t AV [sec] Figure 7. Characteristic curves of 2SK455 (3/3)

31 Page 27 2 Allowable Power Dissipation P D =f(t c ) Typical Output Characteristics =f( ): 8 s pulse test, T ch V 2V V 8.V P D [W] V T c VGS=4.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch =6V.2 Drain-Source On-state Resistance =f(t ch ): =6.A, =2V.2. 8V.5 [ ].8.6 V 2V 4V [ ]. max..4.5 typ T ch Figure 8. Characteristic curves of 2SK456 (/3)

32 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =32A, T ch max. 2 6V Vcc= 4V V (th) min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =V, =2V, R G =, T ch =25 o C 4 Ciss 3 2 t r t d (off) C [pf] 2 Coss t [ns] t d (on) Crss t f Maximum Safe Operating Area =f( ) Operation in the area is limited by R DS(om) Single Pulse PW=ms PWms PW=5ms.. Figure 9. Characteristic curves of 2SK456 (2/3)

33 Page 29 9 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=32A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ):starting T ch =25 C,V DD =48V 8 E AS [mj] =3A =2A =32A Avalanche Current I AV starting T ch t AV [sec] Figure 2. Characteristic curves of 2SK456 (3/3)

34 Page 3 Allowable Power Dissipation P D =f(t c ) 4 Typical Output Characteristics =f( ): 8 s pulse test, T ch 3 4V 2V V 8.V P D [W] V T c VGS=4.V Typical Transfer Characteristic =f( ) :8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch.4 Drain-Source On-state Resistance =f(t ch ): =7.A, =2V.35.4 =6V [ ].2 8V V 2V 4V [ ].2.5. max. typ T ch Figure 2. Characteristic curves of 2SK457 (/3)

35 Page 3 7. Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =4A, T ch Vcc= 4V 5.5 V 5. 6V 4.5 max. (th) min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =V, =2V, R G =, T ch =25 o C 4 3 Ciss 2 t r C [pf] 2 Coss t [ns] t d (off) t d (on) Crss t f Maximum Safe Operating Area =f( ) Single Pulse Operation in the area is limited by R DS(om) PW=ms PWms. PW=5ms. Figure 22. Characteristic curves of 2SK457 (2/3)

36 Page 32 5 =6A Maximum Avalanche Energy vs. starting Tch E AS =f(starting T ch ): V DD =48V, <=4A 2 Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V 4 Single Pulse E AS [mj] 3 2 =9A =4A Avalanche Current I AV starting T ch t AV [sec] Figure 23. Characteristic curves of 2SK457 (3/3)

37 Page 33 3 Allowable Power Dissipation P D =f(t c ) Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V V 9 8.V P D [W] V T c =4.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch.4 Drain-Source On-state Resistance =f(t ch ): =2A, =2V.8 =6V.2. [ ].6.4 8V V 2V 4V [ ].8.6 max..4 typ T ch Figure 24. Characteristic curves of 2SK458 (/3)

38 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(qg): =42A,T ch =25 C (th) max V V cc = 5V 25V 2.5 min T ch Qg [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =25V, =2V, R G =, T ch =25 o C 4 Ciss 3 2 t d (off) C [pf] 2 Coss t [ns] t d (on) t r Crss t f Maximum Safe Operating Area =f( ) Operation in the area is limited by R DS(om) Single Pulse PW=ms PWms. PW=5ms. Figure 25. Characteristic curves of 2SK458 (2/3)

39 Page 35 5 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=42A =7A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V E AS [mj] 5 =26A =42A Avalanche Current I AV starting T ch t AV [sec] Figure 26. Characteristic curves of 2SK458 (3/3)

40 Page Allowable Power Dissipation P D =f(t c ) 5 4 Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V V 8.V 3 6.V P D [W] 2 5 VGS=4.V T c Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch =6V.3 Drain-Source On-state Resistance =f(t ch ): =3A, =2V.6 8V.25 [ ] V 2V 4V [ ].2.5. max. typ T ch Figure 27. Characteristic curves of 2SK459 (/3)

41 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =26A, T ch V cc = 5V V 5. 2V 4.5 max. (th) min T ch Q g [nc] 4 Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =25V, =2V, R G =, T ch =25 o C Ciss 3 2 t d (off) C [pf] 2 Coss t [ns] t d (on) t r Crss t f Maximum Safe Operating Area =f( ) Operation in the area is limited by R DS(om) Single Pulse PW=ms PWms. PW=5ms. Figure 28. Characteristic curves of 2SK459 (2/3)

42 Page 38 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=26A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V 9 E AS [mj] =A =6A Avalanche Current I AV 3 =26A starting T ch t AV [sec] Figure 29. Characteristic curves of 2SK459 (3/3)

43 Page 39 Allowable Power Dissipation P D =f(t c ) 2 Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V V 8.V 5 6.V P D [W] 5 5 VGS=4.V T c Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch.7 Drain-Source On-state Resistance =f(t ch ): =6.A, =2V =6V [ ].3.2 8V V 2V 4V [ ].4.3 max..2 typ T ch Figure 3. Characteristic curves of 2SK46 (/3)

44 Page 4 7. Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =2A, T ch max. 2 2V Vcc= 5V 25V (th) min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =25V, =2V, R G =, T ch =25 o C 4 3 Ciss 2 C [pf] 2 Coss t [ns] t d (on) t r t d (off) Crss t f Maximum Safe Operating Area =f( ) Single Pulse Operation in the area is limited by R DS(om) PW=ms. PWms PW=5ms. Figure 3. Characteristic curves of 2SK46 (2/3)

45 Page 4 5 Maximum Avalanche Energy vs. starting Tch E AS =f(starting T ch ): V DD =48V, <=2A 2 Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V 4 =5A Single Pulse E AS [mj] 3 2 =8A =2A Avalanche Current I AV starting T ch t AV [sec] Figure 32. Characteristic curves of 2SK46 (3/3)

46 Page 42 3 Allowable Power Dissipation P D =f(t c ) 9 Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V V 8 8.V P D [W] V T c =4.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch.5 Drain-Source On-state Resistance =f(t ch ): =2A, =2V =6V.3 [ ].3.2 8V [ ].2 max.. V 2V 4V. typ T ch Figure 33. Characteristic curves of 2SK427 (/3)

47 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =42A, T ch (th) max V Vcc= 2V 5V min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =5V, =2V, R G =, T ch =25 o C 4 Ciss 3 Coss 2 t d (off) t r C [pf] 2 t [ns] t d (on) Crss t f Maximum Safe Operating Area =f( ) Single Pulse PW=ms PWms PW=5ms.. Figure 34. Characteristic curves of 2SK427 (2/3)

48 Page 44 4 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=42A =7A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V E AS [mj] 3 2 =26A =42A Avalanche Current I AV starting T ch t AV [sec] Figure 35. Characteristic curves of 2SK427 (3/3)

49 Page 45 2 Allowable Power Dissipation P D =f(t c ) Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V V V P D [W] V T c =4.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch. Drain-Source On-state Resistance =f(t ch ): =2A, =2V.9 =6V V [ ] V 2V 4V [ ] max. typ T ch Figure 36. Characteristic curves of 2SK428 (/3)

50 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =42A, T ch Vcc= 2V V 5V 4.5 max. (th) min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =5V, =2V, R G =, T ch =25 o C 4 t r Ciss 3 2 t d (off) Coss C [pf] 2 t [ns] t d (on) Crss t f Maximum Safe Operating Area =f( ) Operation in the area is limited by R DS(om) Single Pulse PW=ms PWms PW=5ms.. Figure 37. Characteristic curves of 2SK428 (2/3)

51 Page 47 5 Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=42A 2 Single Pulse Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V E AS [mj] 5 =7A =26A =42A Avalanche Current I AV starting T ch t AV [sec] Figure 38. Characteristic curves of 2SK428 (3/3)

52 Page 48 Allowable Power Dissipation P D =f(t c ) 5 Typical Output Characteristics =f( ): 8 s pulse test, T ch 4V 2V 4 V 3 8.V P D [W] V T c =4.V Typical Transfer Characteristic =f( ): 8 s pulse test, =25V, T ch Typical Transconductance gfs=f( ): 8 s pulse test, =25V, T ch gfs [S] Typical Drain-Source on-state Resistance =f( ): 8 s pulse test, T ch.2 Drain-Source On-state Resistance =f(t ch ): =7.5A, =2V =6V V [ ].5 [ ]. max.. V 2V.5 typ..5 4V T ch Figure 39. Characteristic curves of 2SK429 (/3)

53 Page Gate Threshold Voltage vs. T ch (th) =f(t ch ): =, =ma 4 Typical Gate Charge Characteristics =f(q g ): =5A, T ch V Vcc= 2V 5V 4.5 max. (th) min T ch Q g [nc] Typical Capacitance C=f( ): =V, f=mhz, T ch =25 o C 3 Typical Switching Characteristics vs. t=f( ): V DD =5V, =2V, R G =, T ch =25 o C 4 3 Ciss 2 t d (off) t r C [pf] 2 Coss t [ns] t d (on) Crss t f Maximum Safe Operating Area =f( ) Single Pulse PW=ms PWms PW=5ms.. Figure 4. Characteristic curves of 2SK429 (2/3)

54 Page 5 =6A Maximum Avalanche Energy vs. starting T ch E AS =f(starting T ch ): V DD =48V, <=5A 2 Maximum Avalanche Current Pulsewidth I AV =f(t AV ): starting T ch, V DD =48V Single Pulse E AS [mj] 5 =9A =5A Avalanche Current I AV starting T ch t AV [sec] Figure 4. Characteristic curves of 2SK429 (3/3)

55 Page 5 6. ENVIRONMENTAL LIMITS The environmental test results are shown in Tables 5 through. 6. Mechanical Vibration Table 5. Mechanical vibration test result Test Items Test Conditions Failure/Samples Vibration, Variable Frequency 6.2 Mechanical Shock 2G or Maximum vibration amplitude.52mm, whichever is smaller. to 2Hz, Total sweep time: 4 minutes X, Y, Z each orientation: 4 times Table 6. Mechanical shock test result /66 pieces 2SK452 /22pcs 2SK453 /22pcs 2SK454 /22pcs Test Items Test Conditions Failure/Samples Shock 5G (47m/s 2 ): Pulse width.5msec X, Y, Y 2, Z each orientation: 5 times /66 pieces 2SK452 /22pcs 2SK453 /22pcs 2SK454 /22pcs 6.3 Constant Acceleration Table 7. Constant acceleration test result Test Items Test Conditions Failure/Samples Constant Acceleration 6.4 Thermal Shock G (9866.5m/s 2 ): minute X, Y, Y 2, Z each orientation Table 8. Thermal shock test result /66 pieces 2SK452 /22pcs 2SK453 /22pcs 2SK454 /22pcs Test Items Test Conditions Failure/Samples Thermal Shock -55 C to 25 C to 5 C (3min.) (5min.) (3min.) 5cycles /35 pieces 2SK458 /45pcs 2SK459 /45pcs 2SK46 /45pcs

56 Page Electrostatic Discharge Sensitivity Classification Test Items Table 9. Electrostatic discharge sensitivity classification Test Conditions Test result MIL-STD-75 method 2 2SK452, 2SK455 2SK458, 2SK427 =±275V Class 2 Electrostatic Discharge 2SK453, 2SK456 2SK459, 2SK428 =±V Class 2SK454, 2SK457 2SK46, 2SK429 =±5V Class 6.6 Radiation Hardness Table -a. Radiation hardness test results Test Conditions Source: Co 6 gamma-ray Dose: Gy(Gy/hr), 3 Gy(3Gy/hr), 6 Gy(3Gy/hr) Total Dose Irradiation (TID) Bias Conditions (During and after irradiation) (a) =V, =2 V (b) =V, =-2 V (c) =2V, =V Representative Sample: 2SK458 Test Results For each bias condition: /4 pieces (x 3 Gy, 2SK458) BS TID dependence: Fig. 42, (th) TID dependence : Fig BIAS VGS=+2V VGS=-2V VDS=2V 5 5 Total Dose(Gy) Figure 42. Total dose dependence of BS ( 2SK458)

57 Page Vds=5V 2 - BIAS VGS=+2V VGS=-2V VDS=2V -2 5 Total Dose(Gy) Figure 43. Total dose dependence of (th) ( 2SK458)

58 Page 54 Part Number Single Event Tolerance (SEB/SEGR) Single Event Burnout/ Single Event Gate Rupture 2SK 427 Table -b. Note( ): Average LET in the device. Radiation hardness test results V Class 3V Class 2V Class 25V Class 2SK 2SK 2SK 2SK 2SK 2SK 2SK 2SK 2SK 2SK LET 37.9MeV/(mg/cm 2 )( ) =V and =-7.5V /3 pieces = 2V and =-2V / piece (SEE-SOA: Fig. 44) LET 38.4MeV/(mg/cm 2 )( ) Test Conditions LET 39.3MeV/(mg/cm 2 )( ) Ion: 89 Y, Energy: 928 MeV Range: 2μm,T A =25+/-5 o C Fluence: 3E5+/- 5% ions/cm 2 Irradiation angle: Perpendicular to die surface Limits: I GSS μa and it shall not be destroyed. =3V and =-7.5V /3 pieces (SEE-SOA: Fig. 45) Test Results =2V and =-7.5V /3 pieces =3V and =-2V / piece (SEE-SOA: Fig. 46) 2SK 46 LET 4.MeV/(mg/cm 2 )( ) =25V and =-7.5V /3 pieces =3V and =-2V / piece (SEE-SOA: Fig. 47)

59 Page VDS (V) (V) Figure 44. SEE-SOA ( 2SK427, 2SK428, 2SK429) 4 2 VDS (V) (V) Figure 45. SEE-SOA ( 2SK452, 2SK453, 2SK454) Note: The dotted line in this figure is estimated from the results of radiation hardness test in the V-class devices.

60 Page VDS (V) (V) Figure 46. SEE-SOA ( 2SK455, 2SK456, 2SK457) VDS (V) (V) Figure 47. SEE-SOA ( 2SK458, 2SK459, 2SK46)

61 Page RELIABILITY 7. Accelerated Test Results Table. Accelerated test results Test Items Test Conditions Failure/Samples Steady-state operating life test (High Temperature, voltage applied for gate to source) Method 42 of MIL-STD-75, Condition A T A =5 C, hr =6V /35 pieces 2SK452/5 pcs 2SK453/5 pcs 2SK454/5 pcs 2SK455/5 pcs 2SK456/5 pcs 2SK457/5 pcs 2SK458/5 pcs 2SK459/5 pcs 2SK46/5 pcs Steady-state operating life test (High Temperature, voltage applied for drain to source) Method 42 of MIL-STD-75, Condition B T A =5 C, hr 2SK452, K453, K454: =4V 2SK455, K456, K457: =6V 2SK458, K459, K46: =2V /35 pieces 2SK452/5 pcs 2SK453/5 pcs 2SK454/5 pcs 2SK455/5 pcs 2SK456/5 pcs 2SK457/5 pcs 2SK458/5 pcs 2SK459/5 pcs 2SK46/5 pcs Thermal shock (Temperature Cycling) -55 to 5 o C, 5cycles /35 pieces 2SK458/45 pcs 2SK459/45 pcs 2SK46/45 pcs Intermittent operating life test (Power Cycling) T C =7deg, 6cycles /72 pieces 2SK452/8 pcs 2SK453/8 pcs 2SK454/8 pcs 2SK455/8 pcs 2SK456/8 pcs 2SK457/8 pcs 2SK458/8 pcs 2SK459/8 pcs 2SK46/8 pcs

62 Page Possible Failure Mode Table 2. Possible failure mode Failure mode Rate (%) Short Increase of Leakage Current Thermal Resistance Increase Degradation of (th) Open Others STORAGE () The devices are necessary to be stored under the appropriate temperature and humidity ranges. The recommended ambient temperature range is to 3 C. The recommended relative humidity range is 4 to 6%. (2) The devices shall be stored in an environment free of corrosive gases and minimum dusts. (3) Countermeasures such as conductive bags and aluminum films shall be utilized to avoid the electrostatic discharge occurring between gate and source, and gate and drain terminals. 9. NOTES The following precautions shall be taken when handling this device. () The reflow soldering of terminals for SMD package should be performed at 2 C or more for 3 to 6sec of pre-heat temperature and at 24 C or below for sec of peak temperature in accordance with JERG--43. (2) In handling the product, ground human body, work area and measuring instruments.. OTHERS The contact information on this data sheet is as follows: Supplier: Fuji Electric Device Technology Co., Ltd. Address: Gate City Ohsaki, East Tower -2, Osaki -chome, Shinagawa-ku, Tokyo 4-32, Japan Inquiry: Sales Dept., Automotive Application Div., Semiconductors Group Phone: