KM44C1000D, KM44V1000D

Transcription

1 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode s. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in 3.3V Low power version. This 1Mx4 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems. FEATURES Part Identification - KM44C1000D/D-L(5V, 1K Ref.) - KM44V1000D/D-L(3.3V, 1K Ref.) Active Power Dissipation Speed 3.3V 5V Unit : mw Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (3.3V, L-ver only) Fast parallel test mode capability TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early write or output enable controlled write JEDEC Standard pinout Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages Single +5V±10% power supply(5v product) Single +3.3V±0.3V power supply(3.3v product) FUNCTIONAL BLOCK DIAGRAM Refresh Cycles Part NO. Refresh cycle Refresh Period Normal L-ver RAS CAS W Control Clocks VBB Generator Vcc Vss KM44C1000D KM44V1000D Performance Range 1K 16ms 128ms Speed trac tcac trc tpc Remark -5 50ns 15ns 90ns 35ns 5V only -6 60ns 15ns 110n 40ns 5V/3.3V -7 70ns 20ns 130n 45ns 5V/3.3V A0~A9 Refresh Timer Refresh Control Refresh Counter Row Address Buffer Col. Address Buffer Row Decoder Memory Array 1,048,576 x4 Cells Column Decoder Sense Amps & I/O Data in Buffer Data out Buffer OE DQ0 to DQ3 SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

2 PIN CONFIGURATION (Top Views) KM44C/V1000DJ KM44C/V1000DT DQ0 DQ1 W RAS A VSS DQ3 DQ2 CAS OE DQ0 DQ1 W RAS A VSS DQ3 DQ2 CAS OE A0 A1 A2 A3 VCC A8 A7 A6 A5 A4 A0 A1 A2 A3 VCC A8 A7 A6 A5 A4 ( SOJ ) ( TSOP-II ) Pin Name A0 - A9 DQ0-3 VSS RAS CAS W OE VCC Pin function Address Inputs Data In/out Ground Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power(+5V) Power(+3.3V)

3 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating 3.3V 5V Voltage on any pin relative to VSS VIN,VOUT -0.5 to to +7.0 V Voltage on VCC supply relative to VSS VCC -0.5 to to +7.0 V Storage Temperature Tstg -55 to to +150 C Power Dissipation PD mw Short Circuit Output Current IOS * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Units RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70 C) Parameter Symbol *1 : VCC +1.3V/15ns(3.3V), VCC +2.0V/20ns(5V), Pulse width is measured at VCC *2 : - 1.3V/15ns(3.3V), - 2.0V/20ns(5V), Pulse width is measured at VSS 3.3V 5V Min Typ Max Min Typ Max Supply Voltage VCC V Ground VSS V Input High Voltage VIH VCC+0.3 * VCC+1.0 *1 V Input Low Voltage 0.3 * *2-0.8 V Units DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Symbol Min Max Units 3.3V Input Leakage Current (Any input 0 VIN VCC+0.3V, all other input pins not under test=0 Volt) Output Leakage Current (Data out is disabled, 0V VOUT VCC) II(L) -5 5 ua IO(L) -5 5 ua Output High Voltage Level(IOH=-2) VOH V Output Low Voltage Level(IOL=2) VOL V 5V Input Leakage Current (Any input 0 VIN VCC+0.5V, all other input pins not under test=0 Volt) Output Leakage Current (Data out is disabled, 0V VOUT VCC) II(L) -5 5 ua IO(L) -5 5 ua Output High Voltage Level(IOH=-5) VOH V Output Low Voltage Level(IOL=4.2) VOL V

4 DC AND OPERATING CHARACTERISTICS (Recommend operating conditions unless otherwise noted.) Symbol Power Speed KM44V1000D Max KM44C1000D Units ICC1 Don t Care ICC2 Don t Care Don t Care 1 2 ICC3 Don t Care ICC4 Don t Care ICC5 Normal L Don t Care ua ICC6 Don t Care ICC7 L Don t Care ua ICCS L Don t Care ua ICC1* : Operating Current (RAS and CAS ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS ICC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(vih)=vcc-0.2v, Input low voltage(vil)=0.2v, CAS=0.2V, DQ=Don t Care, TRC=125us(L-ver.), TRAS=TRASmin~300ns ICCS : Self refresh current RAS=CAS=VIL, W=OE =A0 ~ A9=VCC-0.2V or 0.2V DQ0 ~ DQ3=VCC-0.2V, 0.2V or OPEN *Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 ICC6 and ICC7, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one fast page mode cycle time, tpc.

5 CAPACITANCE (TA=25 C, VCC=5V or 3.3V, f=1mhz) Parameter Symbol Min Max Units Input capacitance [A0 ~ A9] CIN1-5 pf Input capacitance [RAS, CAS, W, OE] CIN2-7 pf Output capacitance [DQ0 - DQ3] CDQ - 7 pf AC CHARACTERISTICS (0 C T 70 C, See note 1,2) Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V Parameter Symbol -5 *1-6 7 Units Notes Min Max Min Max Min Max Random read or write cycle time trc ns Read-modify-write cycle time trwc ns Access time from RAS trac ns 3,4,10 Access time from CAS tcac ns 3,4,5 Access time from column address taa ns 3,10 CAS to output in Low-Z tclz ns 3 Output buffer turn-off delay toff ns 6 Transition time (rise and fall) tt ns 2 RAS precharge time ns RAS pulse width 50 10K 60 10K 70 10K ns RAS hold time trsh ns CAS hold time tcsh ns CAS pulse width 15 10K 15 10K 20 10K ns RAS to CAS delay time trcd ns 4 RAS to column address delay time trad ns 10 CAS to RAS precharge time ns Row address set-up time tasr ns Row address hold time trah ns Column address set-up time tasc ns Column address hold time ns Column address to RAS lead time tral ns Read command set-up time trcs ns Read command hold time referenced to CAS trch ns 8 Read command hold time referenced to RAS trrh ns Write command hold time twch ns Write command pulse width ns Write command to RAS lead time trwl ns Write command to CAS lead time tcwl ns Note) *1 : 5V only

6 AC CHARACTERISTICS (0 C TA 70 C, See note 2) Note) *1 : 5V only Parameter Symbol -5 * Units Notes Min Max Min Max Min Max Data set-up time tds ns 9 Data hold time tdh ns 9 Refresh period (Normal) tref ms Refresh period (L-ver) tref ms Write command set-up time twcs ns 7 CAS to W delay time tcwd ns 7 RAS to W delay time trwd ns 7 Column address to W delay time tawd ns 7 CAS precharge to W delay time tcpwd ns 7 CAS set-up time (CAS-before-RAS refresh) tcsr ns CAS hold time (CAS-before-RAS refresh) tchr ns RAS to CAS precharge time C ns CAS precharge time (C-B-R counter test cycle) tcpt ns Access time from CAS precharge tcpa ns 3 Fast Page mode cycle time tpc ns Fast Page read-modify-write cycle time tprwc ns CAS precharge time (Fast Page cycle) tcp ns RAS pulse width (Fast Page cycle) P K K K ns RAS hold time from CAS precharge trhcp ns OE access time toea ns OE to data delay toed ns Out put buffer turn off delay time from OE toez ns 6 OE command hold time toeh ns Write command set-up time (Test mode in) twts ns Write command hold time (Test mode in) twth ns W to RAS precharge time (C-B-R refresh) twrp ns W to RAS hold time (C-B-R refresh) twrh ns RAS pulse width (C-B-R self refresh) S us 14,15,16 RAS precharge time (C-B-R self refresh) S ns 14,15,16 CAS Hold time (C-B-R self refresh) tchs ns 14,15,16

7 TEST MODE CYCLE ( Note 11 ) Parameter Symbol -5 * Min Max Min Max Min Max Units Notes Random read or write cycle time trc ns Read-modify-write cycle time trwc ns Access time from RAS trac ns 3,4,10 Access time from CAS tcac ns 3,4,5 Access time from column address taa ns 3,10 RAS pulse width 55 10K 65 10K 75 10K ns CAS pulse width 18 10K 20 10K 25 10K ns RAS hold time trsh ns CAS hold time tcsh ns Column Address to RAS lead time tral ns CAS to W delay time tcwd ns 7 RAS to W delay time trwd ns 7 Column Address to W delay time tawd ns 7 Fast Page mode cycle time tpc ns Fast Page mode read-modify-write cycle tprwc ns RAS pulse width (Fast Page cycle) P K K K ns Access time from CAS precharge tcpa ns 3 OE access time toea ns OE to data delay toed ns OE command hold time toeh ns Note) *1 : 5V only

8 NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved. 2. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. 3. Measured with a load equivalent to 2 TTL(5V)/1 TTL(3.3V) loads and 100pF. 4. Operation within the trcd(max) limit insures that trac(max) can be met. trcd(max) is specified as a reference point only. If trcd is greater than the specified trcd(max) limit, then access time is controlled exclusively by tcac. 5. Assumes that trcd trcd(max). 6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to Voh or Vol. 7. twcs, trwd, tcwd, tawd and tcpwd are non restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If twcs twcs(min), the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tcwd tcwd(min), trwd trwd(min), tawd tawd(min) and tcpwd tcpwd(min) then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the condition of the data out is indeterminate. 8. Either trch or trrh must be satisfied for a read cycle. 9. These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in read-modify-write cycles. 10. Operation within the trad(max) limit insures that trac(max) can be met. trad(max) is specified as a reference point only. If trad is greater than the specified trad(max) limit, then access time is controlled by taa. 11. These specifiecations are applied in the test mode. 12. In test mode read cycle, the value of trac, taa, tcac is delayed by 2ns to 5ns for the specified values. These parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 13. toff(max) defines the time at which the output achieves the open circuit condition and are not referenced to output voltage level. 14. If S 100us, then RAS precharge time must use S instead of. 15. For RAS-only refresh and burst CAS-before-RAS refresh mode, 1024(1K) cycle of burst refresh must be executed within 16ms before and after self refresh, in order to meet refresh specification. 16. For distributed CAS-before-RAS with 15.6us interval, CAS-before-RAS refresh should be executed with in 15.6us immediately before and after self refresh in order to meet refresh specification.

9 READ CYCLE trc tcsh ROW trad trcd tasr trah tasc trsh tral trcs trch trrh toff taa toez OE VIH - toea tcac VOH - VOL - OPEN trac tclz DATA-OUT

10 WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN trc tcsh trcd trsh ROW trad tasr trah tasc tral tcwl trwl twcs twch OE VIH - VIH - tds tdh

11 WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : DOUT = OPEN trc tcsh ROW trad trcd tasr trah tasc trsh tral tcwl trwl OE VIH - toed toeh VIH - tds tdh

12 READ - MODIFY - WRTIE CYCLE trwc trad trcd trsh tasr trah tasc ROW ADDR tcsh tawd tcwd tcwl trwl trwd OE VIH - toea tclz VI/OH - VI/OL - tcac taa trac toed toez DATA-OUT tds tdh

13 FAST PAGE READ CYCLE P trhcp tasr ROW ADDR trad tasc trah trcd trcs tcsh trch tcp tasc tpc tasc trcs tcp trcs trsh tral trch trrh tcac tcac tcac OE VIH - toea toea toea VOH - VOL - trac tclz taa taa toff tclz toez DATA-OUT toff tclz toez DATA-OUT taa DATA-OUT toff toez

14 FAST PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN P trhcp tasr ROW ADDR trad trah trcd tasc tcsh tpc tcp tasc tpc tcp tasc tral trsh twcs twch twcs twch twcs twch OE VIH - tcwl tcwl tcwl trwl VIH - tds tdh tds tdh tds tdh

15 FAST PAGE READ - MODIFY - WRITE CYCLE tcsh P tasr ROW ADDR trcd trad trah tasc COL. ADDR tcp tasc COL. ADDR trsh tprwc tral trcs tcwl tcwl trwl tcwd tcwd tawd tawd trwd tcpwd OE VIH - VI/OH - toea tcac taa trac toez toed tds tdh toea tcac taa toed toez tdh tds VI/OL - tclz tclz DATA-OUT DATA-OUT

16 RAS - ONLY REFRESH CYCLE NOTE : W, OE, DIN = DOUT = OPEN trc C tasr trah ROW ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE, A = trc C tcp tcsr tchr C twrp twrh VOH - VOL - toff OPEN

17 HIDDEN REFRESH CYCLE ( READ ) trc trc trad trcd trsh tchr tasr trah tasc ROW trcs tral twrh taa OE VIH - toea tcac toff VOH - VOL - OPEN trac tclz toez DATA-OUT

18 HIDDEN REFRESH CYCLE ( WRITE ) NOTE : DOUT = OPEN trc trc trad trcd trsh tchr tasr trah tasc ROW twcs tral twch twrh twrp OE VIH - VIH - tds tdh

19 CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE tcsr tchr tcpt trsh tral tasc READ CYCLE VIH - W twrp twrh trcs taa tcac trrh trch VIH - OE VOH - VOL - WRITE CYCLE VIH - W OE VIH - twrp twrh tclz twcs toea trwl tcwl twch toez DATA-OUT toff VIH - tds tdh READ-MODIFY-WRITE VIH - OE twrp twrh trcs taa tawd tcwd tcac toea toed tcwl trwl tdh tclz toez tds VI/OH - VI/OL - DATA-OUT

20 CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE, A = C S S C tcp tchs tcsr VOH - VOL - toff OPEN twrp twrh TEST MODE IN CYCLE NOTE : OE, A = trc C tcp tcsr tchr C twts twth VOH - VOL - toff OPEN

21 PACKAGE DIMENSION 26(20) SOJ 300mil Units : Inches (millimeters) #26(20) (8.39) (8.63) (7.62) (6.61) (7.11) (0.15) (0.30) (17.55) MAX (17.03) (17.27) (3.76) MAX (0.69) MIN (0.95) (1.27) (0.66) (0.81) (0.38) (0.53) 26(20) TSOP(II) 300mil Units : Inches (millimeters) (9.02) (9.42) (7.62) (0.10) (0.25) (17.54) MAX (17.04) (17.24) (1.20) MAX (0.25) TYP (0.95) (1.27) (0.05) MIN (0.30) (0.50) (0.45) (0.75) O 0~8