3-Phase Brushless DC Motor Controller
|
|
- Alice Howard
- 5 years ago
- Views:
Transcription
1 -Phase Brushless D Motor ontroller DESRIPTION The Si999 is a monolithic brushless dc motor controller with integral high-side drive circuitry. The Si999 is configured to allow either 0 or 0 commutation sensor spacing. The internal low-voltage regulator allows operation over a wide input voltage range, 0 to 0 dc. The Si999 provides commutation from Hall-effect sensors. The integral high-side drive, which utilizes combination bootstrap/charge pump supplies, allows implementation of an all N-hannel MOSFET -phase bridge. PWM, direction, quadrature select, and braking inputs are included for control along with a tachometer output. Protection features include cross conduction protection, current limiting, and undervoltage lockout. The output indicates when undervoltage, over current, disable, or invalid sensor shutdown has occurred. The Si999 is available in both standard and lead (Pb)-free -pin SQFP packages and is specified to operate over the commercial temperature range of 0 to 0 ( suffix), and the industrial temperature range of - 0 to (D suffix). FEATURES Hall-Effect ommutation 0 or 0 Sensor Spacing Integral High-Side Drive for all N-hannel MOSFET Bridges PWM Input Quadrature Selection Tachometer Output Reversible Braking Output Enable ontrol ross onduction Protection urrent Limiting Undervoltage Lockout Internal Pull-Up Resistors FUNTIONAL BLOK DIAGRAM Low-oltage Regulator Low-Side U.. Lockout REF AP A AP B AP High-Side U.. Lockout Bootstrap Reg. harge Pump Bootstrap Reg. harge Pump 0 AP A GT A S A AP B GT B IN A IN B IN 0/0 EN F/R QS PWM BRK 9 0 REF REF REF REF REF Input Logic Bootstrap Reg. harge Pump 9 -, - -, - S B AP GT S GB A GB B GB / T One Shot I S - I S + S-09-Rev. E, -Jun-0
2 ABSOLUTE MAXIMUM RATINGS Parameter Limits Unit oltage on Pin 0 oltage on Pins -, 0, - 0. to + 0. oltage on Pins to. oltage on Pins,, 0,,, 0 oltage on Pins,, - to 0 Suffix 0 to 0 Operating Temperature D Suffix - 0 to Storage Temperature - to 0 Junction Temperature (T J ) 0 Power Dissipation (P D ) Suffix 0.0 D Suffix 0. W Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. REOMMENDED OPERATING RANGE Parameter Limit Unit + 0 to 0 D 0 kω Min SPEIFIATIONS Test onditions Limits Parameter Symbol Unless Otherwise Specified Unit = 0 to 0, I DD = 0 ma Min a Typ b Max a Power Supply oltage Range 0 0 Logic oltage - 0 ma I DD 0 ma.. Supply urrent I+. Logic urrent I DD - 0 ma Internal Reference d REF. ommutation Inputs (IN A, IN B, IN, 0/0) High-State IH.0 Low-State IL.0 High-State Input urrent I IH IH = 0 Low-State Input urrent I IL IL = 0-0 µa Logic Inputs (F/R, EN, QS, PWM, BRK) High-State IH.0 Low-State IL 0. High-State Input urrent I IH IH =. 0 Low-State Input urrent I IL IL = 0 - µa Outputs Low-Side Gate Drive, High State GBH. Low-Side Gate Drive, Low State GBL 0. T A = 0 to 0 Suffix High Side Gate Drive, High State GTH T A = - 0 to D Suffix 0 High-Side Gate Drive, Low State GTL 0. apacitor oltage d AP = 0 S-09-Rev. E, -Jun-0
3 SPEIFIATIONS Test onditions Limits Parameter Symbol Unless Otherwise Specified Unit = 0 to 0, I DD = 0 ma Min a Typ b Max a Outputs Low-Side Switching, Rise Time t rl 0 Risetime = to 0 Low-Side Switching, Fall Time t fl Falltime = 0 to High-Side Switching, Rise Time t rh L = 00 pf 00 ns High-Side Switching, Fall Time t fh 0 Break-Before-Make Time t BLH 00 t BHL 00 Output/ Output OL I OL =.0 ma Output Pulsewidth t T ns Protection Low-Side Undervoltage Lockout ULL. Low-Side Hysteresis H 0. High-Side Undervoltage Lockout ULH S A, B, = 0 -. urrent Limit omparator Input Bias urrent I IB - µa T omparator Threshold oltage A = 0 to 0 Suffix TH T A = - 0 to D Suffix 00 m ommon Mode oltage M 0 R One Shot Pulse Width t T = 0 k, T = 0.00 µf 0 p = 0 k, T = 0.0 µf µs Notes: a. The algebraic convention where by the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The reference voltage is not available for external use. d. AP = () + ( ). OMMUTATION TRUTH TABLE Inputs Outputs onditions Sensors Sensors Top Drive Bottom Drive (0 Spacing) (0 Spacing) IN A IN B IN IN A IN B IN EN F/R BR I GT- GT- GT- GB GB GB K S+ A B A B X X X X X X 0 X 0 X Disable X X X X X X 0 X X Power Down L L L L L L X Brake L L L L L L X Over I in BRK L L L L L L X Over I 0 X 0 X X X X 0 X X X Notes: L. Any valid sensor combination X. Don t care. S-09-Rev. E, -Jun-0
4 PIN ONFIGURATION AND ORDERING INFORMATION SQFP- 0 9 IN A IN B IN 0/0 EN F/R QS PWM BRK AP A S A GT A GB A AP B S B GT B GB B AP S GT GB 9 0 ORDERING INFORMATION Standard Part Number Lead (Pb)-free Part Number Temperature Range Package Si999S Si999S-E 0 to 0 SQFP- Si999DS Si999DS-E - 0 to NOTE: Si999S and Si999DS are supplied in trays. / T I S + I S - Top iew PIN DESRIPTION Pins -: IN A, IN B, IN IN A, IN B, and IN are the commutation sensor inputs, and are intended to be driven by open collector Hall effect switches. These inputs have internal pull up resistors tied to, which eliminates the need for external pull up resistors. Pin : 0/0 The 0/0 input allows the use of the Si999 with either a 0 or 0 commutation sensor spacing. An internal pull up resistor, which is tied to, sets the default condition to 0 spacing. 0 spacing is selected by pulling this input to ground. Pin : EN (Enable) A logic "" on this input allows commutation of the motor. This is the default condition as this pin is pulled up internally. When this pin is pulled to ground, all gate drive outputs are turned off. Pin : F/R (Forward/Reverse) A logic "" on this input selects commutation for motor rotation in the "forward" direction. This is the default condition as this pin is pulled up internally. When this pin is pulled to ground, the commutation sensor logic levels are inverted internally, causing reverse rotation. Pin : QS (Quadrature Select) This input determines whether the bottom MOSFETs or both bottom and top MOSFETs switch in response to the PWM signal. A logic "" on this input enables only the bottom MOS- FETs. This is the default condition as this pin is pulled up internally. When this pin is pulled to ground, both the bottom and top MOSFETs are enabled. Pin : PWM An open collector (drain) or TTL compatible signal is applied to this input to control the motor speed. The QS input determines which MOSFETs are switched in response to the PWM signal. If no PWM signal is being used, this input is left open. It is pulled up internally, which allows the MOSFETs to follow the commutation sequence. S-09-Rev. E, -Jun-0
5 PIN DESRIPTION (ONT D) Pin 9: BRK With this input at logic "", the top MOSFETs are turned off and the bottom MOSFETs are turned on, shorting the motor windings together. This provides a braking torque which is dependent on the motor speed. This is the default condition as this pin is pulled up internally. When this pin is pulled to ground, the MOSFETs are allowed to follow the commutation sequence. Pin 0: This output provides a minimum 00 nanosecond output pulse for every commutation sensor transition, yielding a pulse per electrical revolution tachometer signal. This output is open drain. Pin : The output switches low to indicate that at least one of the following conditions exists, controller disable (EN), undervoltage lockout, invalid commutation sensor code shutdown, or overcurrent shutdown. This output is open drain. Pin : / T The junction of the current limit one shot timing resistor and capacitor is connected to this pin. This one-shot is triggered by the current limit comparator when an overcurrent condition exists. This action turns off all the gate drives for the period defined by and T, thus stopping the flow of current. Pin : One side of the current limit one shot timing resistor is connected to this pin. Pin 9: I S + This is the sensing input of the current limit comparator and should be connected to the positive side of the current sense resistor. When the voltage across the current sense resistor exceeds 00 m, the comparator switches and triggers the current limit one-shot. The one-shot turns off all the gate drives for the period defined by and T, thus stopping the flow of current. If the overcurrent condition remains after the shutdown period, the gate drives will be held off until the overcurrent condition no longer exists. Pin 0: I S - This pin is the ground reference for the current limit comparator. It should be connected directly to the ground side of the current sense resistor to enhance noise immunity. Pins -: -, -, -, These pins are the return path for both the logic and gate drive circuits. Also, they serve to conduct heat out of the package, into the circuit board. Pin : GB This is the gate drive output for the bottom MOSFET in Phase. Pin : GT This is the gate drive output for the top MOSFET in Phase. Pin : S This pin is negative supply of the high-side drive circuitry. As such, it is the connection for the negative side of the bootstrap capacitor, the top MOSFET Source, the bottom MOS- FET Drain, and the Phase output. Pin : AP This pin is the positive supply of the high-side circuitry. The bootstrap capacitor for Phase is connected between this pin and S. Pin 9: GB B This is the gate drive output for the bottom MOSFET in Phase B. Pin 0: GT B This is the gate drive output for the top MOSFET in Phase B. Pin : S B This pin is negative supply of the high-side drive circuitry. As such, it is the connection for the negative side of the bootstrap capacitor, the top MOSFET Source, the bottom MOS- FET Drain, and the Phase B output. Pin : AP B This pin is the positive supply of the high-side circuitry. The bootstrap capacitor for Phase B is connected between this pin and SB. Pin : GB A This is the gate drive output for the bottom MOSFET in Phase A. S-09-Rev. E, -Jun-0
6 PIN DESRIPTION (ONT D) Pin : GT A This is the gate drive output for the top MOSFET in Phase A. Pin : S A This pin is negative supply of the high-side drive circuitry. As such, it is the connection for the negative side of the bootstrap capacitor, the top MOSFET Source, the bottom MOS- FET Drain, and the Phase A output. Pin : AP A This pin is the positive supply of the high-side circuitry. The bootstrap capacitor for Phase A is connected between this pin and SA. Pin : The supply voltage for the Si999 is connected between this pin and ground. The internal logic and high-side supply voltages are derived from. Pin : is the internal logic and gate drive voltage. It is necessary to connect a capacitor between this pin and ground to insure that the current surges seen at the turn on of the bottom MOSFETs does not trip the undervoltage lockout circuitry. APPLIATION IRUITS LITTLE FOOT Si999 Q Q Q To ommutation Sensors PWM IN µf T 9 0 IN A IN B IN EN F/R BRK 0/0 QS PWM / T -, - -, - GT A S A AP A GT B S B AP B GT S AP GB A GB B GB I S + I S B A B B B R R S Q Q A B Q To Motor Windings Figure. Three-Phase Brushless D Motor ontroller S-09-Rev. E, -Jun-0
7 APPLIATION IRUITS LITTLE FOOT Si999 Q Q To ommutation Sensor PWM IN µf T IN A IN B IN EN F/R 9 BRK 0/0 0 QS PWM R T / T -, - -, - GT A S A AP A GT B S B AP B GT S AP GB A GB B GB I S + I S B A B B R R S Q Q A B To Motor Windings Notes: ) If driving single phase BLD, tie IN A, IN B, and IN together and drive with single hall. ) If it is being used as an H- bridge controller, tie IN A, IN B, and IN to. Use F/R input to change active diagonal pair of MOSFETs. ) There is no output when connected in this configuration. Figure. Single H-Bridge ontroller LK M0 0 P 0 P MR PWM IN µf T 9 0 IN A IN B IN EN F/R BRK 0/0 Q S PWM / T Si999 GT A S A AP A GT B S B AP B GT S AP GB A GB B GB I S + I S - -, - -, B A B B B R R S Q Q Q Q LITTLE FOOT Q A B Q To Motor Windings Figure. Three-Phase A Motor ontroller S-09-Rev. E, -Jun-0
8 APPLIATION IRUITS µf Si999 = - BE Figure. External Regulator maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S-09-Rev. E, -Jun-0
9 Package Information SQFP: -LEAD (XX. MM) SQUARE (POWER I ONLY) D D AITY MARK A A e b R 0. R 0. L L * For reference only MILLIMETERS INHES* Dim Min Max Min Max A A A b D D e 0.0 TYP 0.00 TYP L L EN: S-00 Rev. A, 0-Feb-0 DWG: 9 Document Number: 9-Jan-0
10 Legal Disclaimer Notice ishay Disclaimer ALL PRODUT, PRODUT SPEIFIATIONS AND DATA ARE SUBJET TO HANGE WITHOUT NOTIE TO IMPROE RELIABILITY, FUNTION OR DESIGN OR OTHERWISE. ishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. ishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, ishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on ishay s knowledge of typical requirements that are often placed on ishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify ishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, ishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the ishay product could result in personal injury or death. ustomers using or selling ishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized ishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of ishay. Product names and markings noted herein may be trademarks of their respective owners. Material ategory Policy ishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-ompliant fulfill the definitions and restrictions defined under Directive 0//EU of The European Parliament and of the ouncil of June, 0 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some ishay documentation may still make reference to RoHS Directive 00/9/E. We confirm that all the products identified as being compliant to Directive 00/9/E conform to Directive 0//EU. ishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDE JS09A standards. Please note that some ishay documentation may still make reference to the IE 9-- definition. We confirm that all the products identified as being compliant to IE 9-- conform to JEDE JS09A standards. Revision: 0-Oct- Document Number: 9000
3-Phase Brushless DC Motor Controller
End of Life. Last vailable Purchase Date is -Dec-0 Si999 -Phase Brushless D Motor ontroller FETURES Hall-Effect ommutation 0 or 0 Sensor Spacing Integral High-Side Drive for all N-hannel MOSFET Bridges
More information3-Phase Brushless DC Motor Controller
-Phase rushless D Motor ontroller Si FETURES Hall-Effect ommutation 0 or 0 Sensor Spacing Integral High-Side Drive for all N-hannel MOSFET ridges PWM Input Quadrature Selection Tachometer Output Reversible
More informationAdaptive Power MOSFET Driver 1
End of Life. Last Available Purchase Date is 3-Dec-204 Si990 Adaptive Power MOSFET Driver FEATURES dv/dt and di/dt Control Undervoltage Protection Short-Circuit Protection t rr Shoot-Through Current Limiting
More informationDual N-Channel 20 V (D-S) MOSFET
Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
More information5 V, 1 A H-Bridge Motor Driver
, A H-Bridge Motor Driver DESCRIPTION The SIP200 is an integrated, buffered H-bridge with TTL and CMOS compatible inputs with the capability of delivering up to A continuous current at DD supply. The SIP200
More informationN-Channel 20 V (D-S) MOSFET
SiX N-hannel V (D-S) MOSFET PRODUT SUMMARY V DS (V) ( ) I D (ma) 5 at V GS =.5 V 7 at V GS =.5 V 75 9 at V GS =.8 V 5 at V GS =.5 V 5 S-89 S 6 D G 5 G Marking ode: L D S Top View Ordering Information:
More informationP-Channel 20-V (D-S) MOSFET
P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel
More informationN-Channel 60-V (D-S) MOSFET
N7K N-Channel 6-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 6 at V GS = V G S T O-6 SOT - Top View N7K (7K)* * Marking Code Ordering Information: N7K-T N7K-T-E (Lead (Pb)-free) N7K-T-GE
More informationN-Channel 40-V (D-S) MOSFET
SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition
More informationN- and P-Channel 60-V (D-S), 175 C MOSFET
N- and P-Channel -V (D-S), 75 C MOSFET Si4559EY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel.55 at V GS = V ± 4.5.75 at V GS = 4.5 V ± 3.9 P-Channel -.2 at V GS = - V ± 3..5 at V GS = - 4.5
More informationP-Channel 30 V (D-S) 175 C MOSFET
P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available
More informationN- and P-Channel 2.5-V (G-S) MOSFET
N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available
More informationLoad Switch with Level-Shift
Si86DDL Load Switch with Level-Shift PRODUCT SUMMARY V IN (V DS ) (V) R DS(on) ( ) Max. I D (A).8 to DESCRIPTION. at V IN =. V..3 at V IN =. V.9.8 at V IN =.8 V.7 The Si86DDL includes a p- and n-channel
More informationN-Channel 20 V (D-S) MOSFET
Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions
More informationFEATURES G D S. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C
N-Channel 6 V (D-S) Super Junction Power MOSFET DTP63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.4 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET
More informationDual N-Channel 20 V (D-S) MOSFET
SiX Dual N-hannel V (D-S) MOSFET PRODUT SUMMARY V DS (V) R DS(on) ( ) I D (ma) S G D Ω.7 at V GS =. V 6.8 at V GS =. V. at V GS =.8 V SOT-6 S-89 Top View Ω Marking ode: Ordering Information: SiX-T-GE (Lead
More informationLoad Switch with Level-Shift
Si38BDV Load Switch with Level-Shift PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).8 to 8 DESCRIPTION. at V IN =. V.9. at V IN =. V..7 at V IN =.8 V.7 The Si38BDV includes a p- and n-channel MOSFET in
More informationHalf-Bridge MOSFET Driver for Switching Power Supplies
Product is End of Life / Si99 Half-Bridge MOSFET Driver for Switching Power Supplies DESCRIPTION The Si99 is a dual MOSFET high-speed driver with breakbefore-make. It is designed to operate in high frequency
More informationP-Channel 40 V (D-S) 175 C MOSFET
P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
More informationN-Channel 60-V (D-S) MOSFET
Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-
More informationN- and P-Channel 20-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).8 at V GS =.5 V 3. N-Channel. at V GS =.5 V..8 at V GS =.8 V.3.5 at V GS = -.5 V -. P-Channel -. at V GS = -.5 V -.8.3 at
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600
DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE
More informationN-Channel 2.5-V (G-S) Battery Switch, ESD Protection
N-Channel.-V (G-S) Battery Switch, ESD Protection Si694AEDQ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).33 at V GS = 4. V 4.6 8.38 at V GS = 3. V 4.3.4 at V GS =. V 4. FEATURES Halogen-free Low R DS(on)
More informationN- and P-Channel 20 V (D-S) MOSFET
N- and P-Channel V (D-S) MOSFET DTS5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 99 at V GS = 4.5 V..4 at V GS =.5 V.9 P-Channel - 89 at V GS = - 4.5 V -.5 73 at V GS = -.5 V -.4 FEATURES Halogen-free
More informationHalf-Bridge N-Channel MOSFET Driver for DC/DC Conversion
Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion DESCRIPTION The SiP41104 is a high-speed half-bridge MOSFET driver for use in high frequency, high current, multiphase dc-to-dc synchronous rectifier
More informationDual P-Channel 20-V (D-S) MOSFET
Dual P-Channel 2-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = - 4.5 V - 4-2 8.94 at V GS = - 2.5 V - 4 FEATURES Halogen-free Option Available TrenchFET Power
More informationP-Channel 8 V (D-S) MOSFET
Si35CDS P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 8.35 at V GS = - 4.5 V - 5.8.48 at V GS = -.5 V - 5..65 at V GS = -.8 V - 4.3 TO-36 (SOT-3) nc FEATURES Halogen-free
More informationDual N-Channel 20-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).8 at V GS = 4.5 V 8. at V GS =.5 V 8 nc SO-8 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C
N-Channel 6 V (D-S) Super Junction Power MOSFET DTK63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.42 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationLoad Switch with Level-Shift
Load Switch with Level-Shift Si8DDL Marking Code: VD SOT-33 SC-7 ( leads) S 2 ON/OFF R, C Top View PRODUCT SUMMARY V DS (V) 2 R DS(on) ( ) at V IN =. V.2 R DS(on) ( ) at V IN = 2. V.3 R DS(on) ( ) at V
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET DTS4 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).58 at V GS = V.6.7 at V GS = 4.5 V.6 TO-6 (SOT-). nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
More informationP- and N-Channel 4 V (D-S) MOSFET
P- and N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 4. 6 at V GS = V 6.7.24 at V GS = 4.5 V 5.8 5. P-Channel -4. 2 at V GS = - V - 6..52 at V GS = - 4.5
More informationPower MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationDual P-Channel 30 V (D-S) MOSFET
Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) - 3 R DS(on) () at V GS = - V.4 R DS(on) () at V GS = - 4.5 V.78 I D (A) per leg -5.4 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q Qualified
More informationSingle Phase Rectifier Bridge, 1.9 A
Single Phase Rectifier Bridge, 1.9 A VS- Series PRODUCT SUMMARY I O V RRM Package Circuit 1.9 A 1 V to 1 V Single phase bridge FEATURES Suitable for printed circuit board mounting Leads on standard 2.54
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationSingle-Line ESD Protection in SOT-23
Single-Line ESD Protection in FEATURES 3 Single-line ESD-protection device ESD-protection acc. IEC 61000-4-2 contact discharge air discharge 1 2 20421 20512 1 Space saving package AEC-Q101 qualified e3-
More informationP-Channel 20 V (D-S) MOSFET with Schottky Diode
P-Channel 20 V (D-S) MOSFET with Schottky Diode Si4823DY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 20 0.08 at V GS = - 4.5 V - 4. 0.75 at V GS = - 2.5 V - 3.3 SCHOTTKY PRODUCT SUMMARY
More informationPrecision Monolithic Quad SPST CMOS Analog Switches
Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining
More informationSynchronous Buck Converter Controller
Product is End of Life 3/204 Synchronous Buck Converter Controller Si950 DESCRIPTION The Si950 synchronous buck regulator controller is ideally suited for high-efficiency step down converters in battery-powered
More informationP-Channel 1.8 V (G-S) MOSFET
Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a, e Q g (Typ.). at V GS = V at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View Pin Top View FEATURES APPLICATIONS D 3 4 8 7 5 G Pin
More informationAutomotive P-Channel 20 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQ23ES PRODUCT SUMMARY V DS (V) - 2 R DS(on) ( ) at V GS = - 4.5 V.2 R DS(on) ( ) at V GS = - 2.5 V.8 I D (A) - 3.9 Configuration Single FEATURES Halogen-free
More informationCAN Bus Driver and Receiver
Product is End of Life 12/2014 CAN Bus Driver and Receiver Si9200 DESCRIPTION The Si9200EY is designed to interface between the Intel 82526 CAN controller and the physical bus to provide drive capability
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET 3 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) I D (A). at V GS = V. at V GS = V 7.5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature Low Thermal Resistance Package Available
More informationComplementary N- and P-Channel 20 V (D-S) MOSFET
Complementary N- and P-Channel V (D-S) MOSFET Si6CX PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).396 at V GS =.5 V.5 N-Channel.56 at V GS =.5 V..56 at V GS =.8 V..75 nc.76 at V GS =.5 V.5.756
More informationLow-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability
Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability DG6, DG63 DESCRIPTION The DG6, DG63 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative
More informationThick Film Resistor Networks, Dual-In-Line, Medium Body, Small Outline, Molded DIP, Surface Mount
Thick Film Resistor Networks, Dual-In-Line, Medium Body, Small Outline, Molded DIP, Surface Mount FEATURES Isolated, bussed and dual terminator schematics available 4, 6, or 2 terminal package Molded case
More informationN- and P-Channel 20-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES
More informationDual N-Channel 60-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationLoad Switch with Level-Shift
SiX Load Switch with Level-Shift PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).5 at V IN =.5 V ±.3.8 to 8.89 at V IN =.5 V ±.3.5 at V IN =.8 V ±.3 SiX, 3 S D Q FEATURES Halogen-free According to IEC 9--
More informationP-Channel 8 V (D-S) MOSFET
SPICE Device Model Si235CDS P-Channel 8 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM
More informationDual P-Channel 60-V (D-S) 175 MOSFET
Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationComplementary 20 V (D-S) MOSFET
SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V
More informationPhotovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay i7966_6 Turn Off FEATURES Open circuit voltage at I F = ma, 8. V typical Short circuit current at I F = ma, 5 μa typical Isolation
More information4-Channel EMI-Filter with ESD-Protection FEATURES VEMI45AA-HNH VEMI45AA-HNH-GS MOLDING COMPOUND FLAMMABILITY RATING
4-Channel EMI-Filter with ESD-Protection 2383 8 7 6 5 9 1 2 3 4 MARKING (example only) Dot = pin 1 marking Y = type code (see table below) XX = date code 2522 YXX 2719 FEATURES Ultra compact LLP1713-9L
More informationP-Channel 20-V (D-S) MOSFET with Schottky Diode
P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE
More informationDual P-Channel 30-V (D-S) MOSFET
Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power
More informationSmall Signal Fast Switching Diode
N45WS-G Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 8/K per 3" reel (8 mm tape), K/box 8/3K per 7" reel (8 mm tape), 5K/box FEATURES Silicon
More informationN- and P-Channel 1.8 V (G-S) MOSFET
Si7DH N- and P-Channel.8 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A). at V GS =. V. N-Channel.8 at V GS =. V.. at V GS =.8 V.. at V GS = -. V -.86 P-Channel -.88 at V GS = -. V -.67.6 at V
More informationESD-Protection Diode in LLP1006-2L
VESD5A1A-HD1 ESD-Protection Diode in LLP16-2L 2855 MARKING (example only) XY Bar = cathode marking X = date code Y = type code (see table below) 2 1 21121 2856 FEATURES Ultra compact LLP16-2L package Low
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G
More informationN-Channel 100 V (D-S) MOSFET
Si49DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 4 5 D FEATURES
More informationDG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.
1.5 On Resistance, ± 15 / +12 / ± 5, Quad SPST Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix
More informationN-Channel 0 V (D-S) MOSFET
N-Channel V (D-S) MOSFET 66SJ PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).6 at V GS = V 53 4 nc.9 at V GS = 4.5 V 4 FEATURES TrenchFET II Power MOSFET % R g and UIS Tested APPLICATIONS
More informationLinear Optocoupler for Optical DAA in Telecommunications, High Performance
Linear Optocoupler for Optical DAA in Telecommunications, High Performance FEATURES K A 1 2 K1 K2 8 K 7 A 2 mm high SMD package High sensitivity (K1) at low operating LED current Couples AC and DC signals
More informationSingle-Line ESD Protection in SOT-23
Single-Line ESD Protection in 3 1 2 20421 MARKING (example only) XX YYY XX 20512 YYY = type code (see table below) XX = date code 20357 1 FEATURES Single-line ESD-protection device ESD-protection acc.
More informationP-Channel 30-V (D-S) MOSFET
Si357BDV P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).5 at V GS = - V - 5. - 3. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFETs
More informationHalf-Bridge N-Channel MOSFET Driver for DC/DC Conversion
Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion DESCRIPTION The SiP41109 and SiP41110 are high-speed half-bridge MOSFET drivers for use in high frequency, high current, multiphase dc-to-dc synchronous
More informationAutomotive N-Channel 40 V (D-S) 175 C MOSFET
Automotive N-Channel 40 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 40 R DS(on) ( ) at V GS = 0 V 0.009 I D (A) 20 Configuration TO-263 Single D FEATURES TrenchFET Power MOSFET Package with Low Thermal
More informationPower MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A
Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si483CDY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) Channel- 3 Channel-2 3.2 at V GS = V 8..25 at V GS = 4.5 V 8..2 at V GS = V 8..25
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5
More informationComplementary 30 V (G-S) MOSFET
Si39DL Complementary 3 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) ( ) I D (A) N-Channel 3.8 at V GS = V 3.7 at V GS =. V. P-Channel - 3.9 at V GS = - V -..7 at V GS = -. V -.33 FEATURES TrenchFET Power MOSFET
More informationPrecision Monolithic Quad SPST CMOS Analog Switches
Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix
More informationLow Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES
www.vishay.com Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces 2 746 MARKING (example only) XX 2052 YYY XX Bar = cathode marking YYY = type code (see table below) XX = date code 2057
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
More informationInfrared Emitting Diode, 950 nm, GaAs
Infrared Emitting Diode, 95 nm, CQY37N DESCRIPTION 94 8638-2 CQY37N is an infrared, 95 nm emitting diode in technology molded in a miniature, clear plastic package with lens. FEATURES Package type: leaded
More informationHalf-Bridge N-Channel MOSFET Driver With Break-Before-Make
Half-Bridge N-Channel MOSFET Driver With Break-Before-Make DESCRIPTION The SiP411 is a high speed half-bridge driver, with make-before-break, for use in high frequency, high current multiphase dc-to-dc
More informationHigh-Speed Quad Monolithic SPST CMOS Analog Switch
DG27B High-Speed Quad Monolithic SPST CMOS Analog Switch DESCRIPTION The DG27B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).88 at V GS = V 3 nc.95 at V GS =7.5 V DFN 3x3 EP Top View Bottom View Pin Top View FEATURES TrenchFET Power MOSFET
More informationN-Channel 250 V (D-S) 175 C MOSFET
SUP4N25-6 N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) (A) Q g (Typ) 25 TO-22AB.6 at V GS = V 4.64 at V GS = 6 V 38.7 95 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature
More informationProtected 1-A High-Side Load Switch
Product is End of Life 2/24 Protected -A High-Side Load Switch SiP463A, SiP463B DESCRIPTION SiP463A, SiP463B is a protected highside power switch. It is designed to operate from voltages ranging from 2.4
More information2-Channel EMI-Filter with ESD-Protection
2-Channel EMI-Filter with 9499 6 5 4 2 3 MARKING (example only) XX YY Dot = pin marking YY = type code (see table below) XX = date code 9957 2 FEATURES Ultra compact LLP75-6A package 2-channel EMI-filter
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available
More informationSingle Phase Rectifier Bridge, 1.2 A
Single Phase Rectifier Bridge, 1.2 A FEATURES VS-1KAB-E Series Ease of assembly, installation, inventory High surge rating Compact Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
More informationDual 2 A, 1.2 V, Slew Rate Controlled Load Switch
Dual 2 A,.2 V, Slew Rate Controlled Load Switch DESCRIPTION SiP3243, SiP3244 and SiP3246 are slew rate controlled load switches that is designed for. V to 5.5 V operation. The devices guarantee low switch
More informationN-Channel 30-V (D-S) MOSFET
Si36BDS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).7 at V GS = V. 3 3..65 at V GS =.5 V 3.5 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g
More informationP-Channel 20-V (D-S) MOSFET
Si33DS P-Channel 0-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.039 at V GS = - 4.5 V - 4.7-0 0.05 at V GS = -.5 V - 4. 0.068 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to
More informationUSB-OTG BUS-Port ESD-Protection for V BUS = 12 V
USB-OTG BUS-Port ESD-Protection for V BUS = 12 V 6 5 4 1 2 3 MARKING (example only) 2517 Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 7 212 XX YY 21 1 FEATURES Ultra compact LLP75-7L
More informationFEATURES TrenchFET Ⅱ Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2011/65/EU PRODUCT SUMMARY APPLICATIONS
4 PRODUCT SUMMARY at V GS = V 8 nc at V GS = 4.5 V D FEATURES TrenchFET Ⅱ Power MOSFET % R g and UIS Tested Compliant to RoHS Directive 2/65/EU APPLICATIONS OR-ing Server DC/DC G G D S Top View S ABSOLUTE
More informationComplementary N- and P-Channel 20 V (D-S) MOSFET
Complementary N- and P-Channel V (D-S) MOSFET Si6X PRODUCT SUMMARY V DS (V) ( ) I D (ma).7 at V GS =. V 6 N-Channel.8 at V GS =. V. at V GS =.8 V. at V GS = -. V - P-Channel -.6 at V GS = -. V -.7 at V
More informationFEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4.
Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package
More information