European Low Flux CMOS Image Sensor

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European Low Flux CMOS Image Sensor Description and Preliminary Results Ajit Kumar Kalgi 1, Wei Wang 1, Bart Dierickx 1, Dirk Van Aken 1, Kaiyuan Wu 1,

1 European Low Flux CMOS Image Sensor Description and Preliminary Results Ajit Kumar Kalgi 1, Wei Wang 1, Bart Dierickx 1, Dirk Van Aken 1, Kaiyuan Wu 1, Alexander Klekachev 1, Gerlinde Ruttens 1, Kyriaki Minoglou 2, Franz Riedlberger 3, Giuseppe Di Nicolantonio 3, Francesco Palumbi 3, Alice Pelamatti

2 Outline Introduction The ELFIS project Need for charge domain Global Shutter (GS), High Dynamic Range(HDR) imaging The ELFIS image sensor Sensor Floorplan Target specifications and features Charge domain GS HDR Pixel operation Test Setup First Image Conclusions 2

3 Project Description ESA funded project European Low Flux CMOS Image Sensor Goal: to develop a Radiation hard, charge domain global shutter, high dynamic range pixel for low flux / high flux space applications Project Partners LFOUNDRY: AIRBUS: GS process development, wafer processing, backside thinning. Electro optical characterization at 173K Project duration: 30 months Start: Feb 2016 End: August 2018 Project status: FSI Silicon 3

4 Need for GS, HDR Imaging 4

5 Voltage vs charge domain GS Voltage domain GS method Voltage stored in an additional capacitor High Dark current on results in High Dark Current shot noise(dcsn) Charge domain GS method Electrons stored in a Storage node DCSN reduced by surface pinning layer p- substrate SN 5

6 Outline Introduction The ELFIS project Need for True Global Shutter (GS), High Dynamic Range(HDR) imaging The ELFIS image sensor Sensor Floorplan Target specifications and features Charge domain GS HDR Pixel operation Test Setup First Image Conclusions 6

7 Sensor Floorplan Control logic Column load Control logic Rowdriver 1920 x 1080 Rowdriver Control Logic &test overhead Column and Video buffers Scanning Logic Control logic &test overhead Single to Differential 7

8 Pixel Specifications Process Lfoundry 110nm CMOS Image Sensor Pixel size 15µm x 15µm Pixel array 1920 x 1080 Full Well High Gain: 7Ke- Low Gain: 200Ke- High Gain: 5e-(nominal condition) Read Noise High Gain: 2.5e-(low noise mode) Low Gain: 110e- Rolling Shutter Shutter Mode Integrate then Read(ITR) Integrate While Read(IWR) Fill Factor 100% CIS Type Backside Illuminated Quantum Efficiency >50% 350nm 800nm >90% peak MTF 1 Nyquist Dark Current < C 8

9 Other Specifications CDS Programmable on or off-chip CDS Frame rate 75 GS HDR Clock Speed 40MHz Output Channels 16 Power Consumption 700mW TID 100KRad SEL 62 MeV.cm2/mg Operating Temperature -100 C C Packaging COB Stitch design Stitchable up to wafer scale 9

10 GS HDR Pixel - Topology HG LG High Gain: - SN - Low Gain-a: a - Ca - Ma Low Gain-b: b - Cb - Mb Low Gain-a, Low Gain-b are used for IWR operation LG C p- CN SN 10

11 GS HDR Pixel - layout RESET SN VDD C Output: Reset Signal, High Gain signal, Low Gain Signal 11

12 GS HDR Pixel During Integration Ф M Photo-charges R Storage node RESET C VDD SN CN VDDpix Ref: A.K. Kalgi et al., Four Concepts for Synchronous, PSN limited,true CDS, HDR imaging, IISW,

13 GS HDR Pixel End of Integration Ф M R Storage node RESET VDD C SN CN VDDpix 13

14 GS HDR Pixel to SN Storage node Ф M R RESET C VDD SN CN VDDpix 14

15 GS HDR Pixel Next Integration Storage node Ф M Next t int R RESET VDD C SN CN VDDpix 15

16 GS HDR Pixel Reset Readout Storage node Ф M Next t int R RESET VDD Select C CN SN VDDpix output R1 16

17 GS HDR Pixel SN to Storage node Ф M Next t int R RESET VDD C SN CN VDDpix 17

18 GS HDR Pixel High Gain Readout Ф M Next t int R Storage node RESET VDD Select C CN SN VDDpix output S1 18

19 GS HDR Pixel Low Gain Readout Ф M Next t int R Storage node RESET VDD Select C CN SN VDDpix output R2 19

20 Outline Introduction The ELFIS project Need for True Global Shutter (GS), High Dynamic Range(HDR) imaging The ELFIS image sensor Sensor Floorplan Target specifications and features Charge domain GS HDR Pixel operation Test Setup First Image Conclusions 20

21 Test Setup 21

22 Test setup 22

23 FIRST IMAGE Operation mode: Global Shutter, High Gain 23

24 Conclusions First preliminary result with New Charge domain GS process Fully European supply chain True GS, fully synchronous HDR pixel is realized for various process conditions Future work GS Process evaluation by various process splits Finishing BSI wafers 24

25 QUESTIONS? 25

26 Backup slides 26

27 HDR total noise (read noise + PSN) [e RMS ] CVF 5µV/e Q FW 200ke 10 High Q FW range: DR=200000/50=4000:1 Low Q FW range: DR=7000/2=3500:1 Combination DR=200000/2 =100000:1 100dB CVF 100µV/e Q FW 7ke 1 0, photo charge [e] 27

High Dynamic Range, PSN Limited, Synchronous Shutter Image sensor

10 Presented at the Caeleste Visionary Workshop The Future of High-end Image Sensors 06 April 2016 High Dynamic Range, PSN Limited, Synchronous Shutter Image sensor A. Kalgi, B. Luyssaert, B. Dierickx,