Low temperature measurements of the large-area, backthinned, and lownoise TAOSII CMOS sensors
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1 Low temperature measurements of the large-area, backthinned, and lownoise TAOSII CMOS sensors Steven Johnson, Jérôme Pratlong, Amr Ibrahim, Paul Jerram, Paul Jorden (e2v technologies) Shiang-Yu Wang and Matt Lehner (ASIAA) WE PARTNER WITH OUR CUSTOMERS TO IMPROVE, SAVE AND PROTECT PEOPLE S LIVES
2 Outline 1. Application (TAOS II telescopes) 2. TAOS II Device description 3. Electo optical performance 4. Cold temperature (down to -100 C) performance 2
3 Aim of TAOS II Project To measure the size distribution of small objects (~1 km diameter) in the Kuiper Belt and beyond. As an object passes in front of a star, the star will "blink out" for a small fraction of a second. 20 frame per second regions of interest 5x5 pixels 3
4 Back thinned AR coated 1920 x 4608 (8.8Mpixels) 16 µm x 16 µm pixels 5T pixel Pinned photodiode 8 analogue outputs 1D Stitched device Sensor area 30.7 X 73.7 mm 4
5 Device Design CIS113 Pixel sampling minimum of 10 µs per line. Simultaneous addressing, sampling and readout. Define 2000 regions, 5x5 pixels each. Separate addressing on Left and Right sides to allow multi-roi. 5
6 Flexible format BASELINE OPTIONS 4608 X X X X µm pixel pitch: 16µm pixel pitch: 16µm pixel pitch: 16µm pixel pitch: ~ 76.5mm X 31.6mm ~ 58mm X 31.6mm ~ 39.6mm X 31.6mm ~ 21mm X 31.6mm 12µm pixel pitch: 12µm pixel pitch: 12µm pixel pitch: 12µm pixel pitch: ~ 57.5mm X 23.5mm ~ 43.6mm X 23.5mm ~ 30.0mm X 23.5mm ~ 16.0mm X 23.5mm 6
7 TAOS II Application 7
8 Readoutpath allowing acquisition of a row while reading out Acquisition Readout Signal Output Acquisition Readout Reset Output 8
9 Temperature dependent performance Front-faced device Cooled device down to -100 C to measure EO performance DC targeted < 1e - /s 9
10 Signal (V) Temperature dependent performance Front-faced device Photons (kph) C C C C C C 0.0 C 20.0 C Device still functional at -100 C with little change in performance CVF= 75 µv/e o C Delta CVF of 7% (increase by 5 µv/e - ) between 20 C and -100 C 10
11 Temperature dependent performance Front-faced device Readout noise Measurement at 20 C Readout noise = 244 µv Measurement at -100 C Readout noise = 254 µv 11
12 Temperature dependent performance Front-faced device Dark signal Dark signal measured down to -60 C (below no reliable data as the signal was too small) 12
13 Electro-optical performance Back thinned device Readout Noise at 20 C Including System Noise Read out noise = 230 µv (System noise removed) Readout Noise < 3e - For one output (240 x 4608 pixels) 13
14 Electro-optical performance Back thinned device Irradiance response at 20 C CVF = 75 µv/e - QE > nm Linearity < 2% (for signal < 1.2 V) 14
15 Dark Signal (V/s) Dark Signal V/pixel/s Electro-optical performance Back thinned device Dark signal 1.E+00 1.E-01 From 45 C to -20 C No amplifier glow is seen Temperature ( C) 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 Temperature (1000/T(K)) 15
16 Electro-optical performance Back thinned device Dark signal at 0 C 16
17 Summary CIS113 is a flexible device which can be used for space or science applications. Good EO results Radiation study to come Parameter BI Results Pixel pitch 16 x 16 µm Pixels 1920 X 4608 Outputs 8 Q LIN 16 ke - Q SAT 24 ke - CVF 75 µv/e - Device Read Out Noise Dark Current Dynamic Range < 3 e e - /pixel/s (at -20 C) 75 db 17
18 Acknowledgements Special Thanks Shiang-Yu Wang from ASIAA Matt Lehner from ASIAA 18
19 WE PARTNER WITH OUR CUSTOMERS TO IMPROVE, SAVE AND PROTECT PEOPLE S LIVES OUR INNOVATIONS LEAD DEVELOPMENTS IN COMMUNICATIONS, AUTOMATION, DISCOVERY, HEALTHCARE AND THE ENVIRONMENT
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