Real Time Etching End Point Monitors (OES & Interferometer type)

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Esmond Sparks
6 years ago
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1 Real Time Etching End Point Monitors (OES & Interferometer type) HORIBA Semiconductor

2 Products Softwares Applications Websites and download

3 Products

Field Digisem MultiCPM First generations

Monochromator 1990 2000 CCD EPD EPD 1983

4 History of HORIBA End Point Monitor 1/2 26 years experience in Process Control Field Digisem MultiCPM First generations Digisem OES type EV 140 Fixed time Monochromator CCD EPD EPD 1983 Multisem 2007 PlasmaScope First generations monochromators Camera 2009 EV-140 C (Windows) SOFIE Instruments JOBIN YVON HORIBA

5 History of HORIBA End Point Monitor 2/2 Interferometer type LEM-CT 670 & 905 nm DIGILEM DIGILEM-TILT 2010 DIGILEM-H DIGILEM-CPM (Windows)

6 End point (ETCH, Cleaning), Health Monitoring (ETCH, Cleaning, CVD) Feature of EV-140 C (OES) UV signal sensitivity enhancement: - UV range optimised spectrograph design - Backside thin CCD - 2D sensor: 2048*64 pixels Robustness design for Process use: - Simple configuration, High reliability - FA grade PC configurable EPD real time control platform: - 20ms (min) sampling - EPD conditions setting by Flexible formula definition - Complete process engineer tool - Unique EPD algorithm for low open area Remote network capability - Coactivity with process tool with specified protocol Spectrograph : Flat field concave holographic grating Focal L. 140 mm) Spectra range : nm Resolution : Detector : Back thin CCD detector 2048 ch Min sampling : 20ms Fiber length : 2m (Standard) Outline : 137 x 257 x 156 mm (WxDxH) Weight : 4.0 kg Remote ctrl : Parallel I/O, RS232C, (TCP/I

End point (ETCH, CVD) Feature of LEM-CT (Laser Interferometry 670, 905 nm ) CCD patented Laser Interferometer: 670 nm, 905 nm Spot diameter : from 25 µ Requirement: Top window on the chamber Measures

7 End point (ETCH, CVD) Feature of LEM-CT (Laser Interferometry 670, 905 nm ) CCD patented Laser Interferometer: 670 nm, 905 nm Spot diameter : from 25 µ Requirement: Top window on the chamber Measures intensity changes of light reflected from the sample surface during etch or deposition process powerful endpoint algorithms that can be easily extended from simple to highly customized applications. Real Time Etch Rate and Etched Thickness Endpoint at a defined thickness End Point on remaining thickness Endpoint on interface,

8 End point (ETCH, CVD) Feature of DIGILEM-H (Spectroscopic Interferometry) Spectrometer unit and additional light source unit can create Wide wavelength range of monitoring channels of CCD sensor can make Multi channel & Simultaneous Interferometry measurement. Wafer view can be observed with same optical axis of monitoring. Wide variety of HORIBA unique Interferometer algorithm Reliable and simple hardware Stop Remain Thickness Function is available for GaN process (Option) Pattern recognition and auto positioning function is available (Option)

9 End point (ETCH, CVD) DIGILEM-H configuration and specifications Model : DIGILEM H UV MN DIGILEM - H UV - PR (Option)/ - AT (Option) DIGILEM H VS MN DIGILEM H VS - PR (Option)/ - AT (Option) Light source unit : Xe-Hg Lamp or Halogen Lamp Spot diameter: microns (Depends on the camera to wafer distance) Light source wavelength : Xe-Hg : nm Halogen : nm Spectrometer (EV-140 C) : Resolution > 2.0nm (with 50 micron slit) Detector : 2048ch CCD Optical fiber : 2 branch fiber x 6m Illumination unit : LED unit System configuration (DIGILEM-H-UV/VS) Camera view Sensor LED illumination Head Spectrograph & PC Plasma HgXe lamp Wafer Sample: installed on IPC etcher Control unit Model : DIGILEM H UV - MN

10 Softwares

monitoring Interferometry Action Button: Go Run name Runs Browser Informations View Select for reprocessing Backup Lock Lots

11 Sigma-P, unique software whatever the sensor Kinetic modeler (Interferometry) Autopattern (Optical Emission Spectroscopy) Script Go for Automatic REPROCESSING Change owner mode ALARMS History Quick & Unified Recipes Selector Spectra real-time Endpoint, Health monitoring Interferometry Action Button: Go Run name Runs Browser Informations View Select for reprocessing Backup Lock Lots Analyzer MultiRun Viewer Action Button: SIMUL Go for REPROCESSING Recipe List Create Modify Set Id Report View last Run current Mode Display, WD

12 Sigma-P, unique software whatever the sensor Sigma_P (Real time software installed on all systems) One click button action User friendly recipe creation & optimisation Comprehensive reprocessing/scripts capabilities Integrated SQL database for data management, Multi-run viewer & Statistics Full connectivity to cluster tools and factory host Manufacturing (24h/day 365/year operators & OEM) Process & Tool control: alarms, events follow-up, loopback Fab integration for distant desktop, in-fab alert notification Completed with Powerful Engineering Tools

13 Sigma-P, recipe editor Tree View: Click a property to open its parameters Add, Remove properties Endpoint Property: Parameters appears in line Click on columns to modify parameters Add line/remove line Variable: easy to use in formula Editor: CURVi, CONDi, DECIi,

Endpoint recipe creation using new mathematical algorithms Import EPD recipe to Sigma_P in one click!

14 Engineering softwares OES type Interferometer type Recipe Designer (option on desktop only) (ENGINEERING TOOL) Easy semi automatic way to go from spectra acquisition to Endpoint wavelengths selection using proprietary algorithms «Automatic» Endpoint recipe creation using new mathematical algorithms Import EPD recipe to Sigma_P in one click! Kinetic Modeler (ENGINEERING TOOL) Simulate layers piling obtain theoritical interferometric curves Save Reference & Import to Sigma_P in one click!

15 Applications

In-Situ Process control applications Application Fields Semiconductor: memories (EDRam, MRam, Flash ), logic circuit devices Optoelectronic: telecommunications, laser diode, MEMS: micropump,

16 In-Situ Process control applications Application Fields Semiconductor: memories (EDRam, MRam, Flash ), logic circuit devices Optoelectronic: telecommunications, laser diode, MEMS: micropump, accelerometer, micromotor, Compounds: LED Optical coatings, FPD, Failure analysis, LCD PV -- Cleaning (Expensive gases economy) -- Uniformity during deposition (manage plasma condition), cleaning (NF3, F2), Etch (CxFy)

17 Interferometric Applications Etch and Growth Rate Layer Thickness End Point Detection

process) End point GaAs A Layer MQW BLayer GaN/MQW Interface (Stop Remain

18 Laser device, LED, Laser result features DIGILEM-H Multiwavelength monitoring due to a wide range of multilayer stack Red Laser device Blue Laser device (GaN process) End point GaAs A Layer MQW BLayer GaN/MQW Interface (Stop Remain Thickness function / Option) Measurement wavelength: λ=335nm Measurement wavelength: λ=550 nm

LASER DIODE, PHOTODETECTORS, LASER MIRRORS GaAs- GaAlAs optoelectronic features LEM-CT + EV-140

Resist p+ GaAs p AlGaAs graded index 4 QWs n AlGaAs graded index n+ AlGaAs GaAs buffer layer 905

Example of wafer surface achieved LD: Laser Diode - PD: PhotoDetector Changes on interferometric

which allows to 1) measure etch rate in real-time 2) distinguish changes of layer composition

19 LASER DIODE, PHOTODETECTORS, LASER MIRRORS GaAs- GaAlAs optoelectronic features LEM-CT + EV-140 Typical wafer structures? Resist p+ GaAs p AlGaAs graded index 4 QWs n AlGaAs graded index n+ AlGaAs GaAs buffer layer 905 nm laser spot GaAs substrate Typical results obtained? Example of wafer surface achieved LD: Laser Diode - PD: PhotoDetector Changes on interferometric signal: amplitude and period. which allows to 1) measure etch rate in real-time 2) distinguish changes of layer composition into heterostructure Additionnally to Laser Interferometry, changes on OES signal amplitude allows to identify interfaces between GaAs and GaAlAs Buffer layer Confinement layer Confinement layer QW Cladding layer Interferometric and OES signals GaAs/GaAlAs interface detection

III-V, Sandwich (MQW, Braggs,..) features LEM-CT Applications : Deep etching of III.V materials GaAs, InP, ternary (InGAs, AlGaAs,...), quaternary (InGaAsP), nitride (GaN, AlGaN,.

20 III-V, Sandwich (MQW, Braggs,..) features LEM-CT Applications : Deep etching of III.V materials GaAs, InP, ternary (InGAs, AlGaAs,...), quaternary (InGaAsP), nitride (GaN, AlGaN,...) 300 s Applications : Etching of III-V semiconductors on GaAs and InP sustrates: ternary, quaternary, nitrides (AlGaAs/GaAs, InGaAsP/InP, InGaAlAs/InP, GaN,...) InP 200 nm In GaAs 103 nm InP 1060 nm Quat InGaAsP 75 nm InP : p 473 nm Quat SCH + MqWs 217 nm (SCH : 55 nm InGaAsP2 MqW : InGaAsP3) InP : n 1040 nm Bragg mirrors

21 SOI, Metal etching, Semiconductors, dielectrics and oxide, Bosch process, SOI, Metal etching, Bosch process using LEM-CT SOI, III-V s stacks Bosch Process (Deposition/Etch Cycle) D E D E D E D E Metal etching Titanium etch SiO 2 substrate

22 Endpoint Plasma Intense (a.u.) Before During After OES Applications Process time (sec) Photomask etching

23 AEC/APC Advanced Process Control End point as Standard Monitoring Increase yield and throughput Process stability Run to Run control Misprocessing ENDPOINT Vacuum leak Chemistry ratio Chamber conditioning Chamber Drift before Wet Clean Bad Lithography Micro-arcing Depend ing on some combin ation Limitation of End point Monitoring Low Open area / High device density Selective chemistry Tool Magnetic field Advanced Equipment Control Health monitoring introduction Process characterization Chamber characterization EPD Complement or substitute Typical CCD Spectrum Chamber health Monitoring: Chamber cleaning Chamber conditioning to avoid first wafer effect Chamber matching and troubleshooting Chamber gas leak detection or gas purity control Preventive maintenance (Wet Clean ) Unexpected events (arcing, )

the approximation of 2 straight lines STEP 3

24 APC Recipe designer : search ruptures Example of Recipe designer setting to develop an endpoint recipe Wavelengths classification Upward rupture: Averaged wavelengths Rupture intensity Threshold Rupture STEP 1 Automatic wavelengths classification (pattern) STEP 2 Identification of the rupture point using the approximation of 2 straight lines STEP 3 The Endpoint recipe is built using Rupture rupture intensity threshold. Export it to Sigma-P

25 APC OES Engineering flow Spectra recipe new proprietary mathematical algorithms: Slope change using kinetic trend fitting Periodic component filtering based on wavelet theory Application on the fly at each new OES spectrum acquisition Statistic study of rupture presence probability.

APC Endpoint detection Process target : Etch Stop at Interface between Layer 1 & Layer 2 Raw data Remove frequent background Start Variation Endpoint Real time data processing for EPD: - Signal

26 APC Endpoint detection Process target : Etch Stop at Interface between Layer 1 & Layer 2 Raw data Remove frequent background Start Variation Endpoint Real time data processing for EPD: - Signal Acquisition - Real time data Treatment - Algorithm to enhance production variation - EPD condition monitoring Upward Curves Downward Curves Layer1 Layer2 Substrate Process time (sec) Signal variation enhancement by special Algorithm

27 AEC Health Monitoring : chamber management Ratio evolution Acceptable Chamber drift Stop Chamber and operate a Wet Clean For each wavelengths within a range, Ratio between spectra reference & current spectra

28 Conclusion HORIBA Introduces New OES product: EV-140 C that has UV enhanced Spectrograph and powerful software platform for total solutions of Process engineering and production. Unique Rupture algorithm is designed and developed for Critical endpoint detections. Recipe Designer is the tool dedicated to Process Engineers to develop and optimize quickly and quite automatically their processes. It includes FDC, health monitoring capabilities to reduce tools downtime, optimise quality and secure wafers production Horiba introduces New Interferometric product: DigiLEM-H to have a complete proposal depending on applications: LEM-CT Laser camera at 670 nm LEM-CT Laser camera at 905 nm DigiLEM-H Tilt head with light sources to cover nm Pattern recognition & Powerful algorithms to manage a broad range of films One unique software, whatever the sensor. User friendly operation. Ability to interface most of the current etchers from any vendor Database, Statistics & Multi-run-viewer are dedicated to process engineer and production to be sure that processes stay under control.

29 Visit our web site Leaflet, presentations, oral presentations

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