Design of Clamped-Clamped Beam Resonator in Thick-Film Epitaxial Polysilicon Technology
|
|
- Joshua Reynolds
- 5 years ago
- Views:
Transcription
1 Design of Clamped-Clamped Beam Resonator in Thick-Film Epitaxial Polysilicon Technology D. Galayko, A. Kaiser, B. Legrand, L. Buchaillot, D. Collard, C. Combi IEMN-ISEN UMR CNRS 8520 Lille, France ST MICROELECTRONICS Milano, Italy ESSDERC 2002, Florence, Italy
2 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 2
3 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 3
4 Introduction Motivation : Realization of a single-chip RF receiver RF filter IF filter Baseband processing RF IF Baseband LO1 LO2 Desirable performances for IF filters: Center frequency MHz High selectivity (250 khz passband ) Integrable on silicon ESSDERC 2002, Florence, Italy Slide 4
5 Introduction Proposal: micromachined micromechanical filters Advantages: Manufactured on silicon integrable with electronic ciruits Small size Low power consumption High Q (up to in vacuum) ESSDERC 2002, Florence, Italy Slide 5
6 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 6
7 Resonator design Principle of mechanical filtering: resonating element + input/output capacitive transudcers v i i i Capacitive transducers C(t) V P v i i i i o v o v i i i i o v o v o i o V P Resonating elements Operating principle: δv i δf i δx δc δq i o ESSDERC 2002, Florence, Italy Slide 7
8 Resonator design Different design issues Gap Resonator Input C 01 C X L X R X Output C 02 Equivalent small-signal model Electrode Anchor Clamped-clamped beam resonator in a thick-film technology 1 Tranduction factor: 2 gap 4 Impedance at resonance R X : gap Transducer s gap width: should be small 3D CoventorWare simulation of a beam L=40µm, W=2µm, H=15µm: resonance frequency Fo=9.8 MHz ESSDERC 2002, Florence, Italy Slide 8
9 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 9
10 Contact to substrats 15 µm Thick-film Thick-film technology technology presentation Device structure Metal Anchor/burried layer contact Trench Structural layer (epitaxial silicon 15 µm) Substrate Oxide Oxide Burried polysilicon ESSDERC 2002, Florence, Italy Slide 10
11 Thick-film technology Mask Dry etching Problem: impossibility to achieve a submicronic transducer s gap 15 µm 1.8 µm min 0.6 µm Underetching 3.0 µm Minimal trench width Minimal available gap: ~ 3.0 µm Maximal acceptable value: ~ 0.5 µm Desirable value: < 0.2 µm Conclusion: gap should be reduced! ESSDERC 2002, Florence, Italy Slide 11
12 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 12
13 Post-fabrication gap reduction Solution: moving the signal electrode close to the resonator Post-fabrication gap reduction method Spring Initial gap Signal electrodes Stoppers Resonator Vin Emot Eres Actual gap Motor electrodes Actual gap=initial gap gap-to-stoppers not sensitive to underetching ESSDERC 2002, Florence, Italy Slide 13
14 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 14
15 Gap reducing motor test Two devices are designed: identical resonators, but different actual gaps. Parameters of the designed resonators: clamped-clamped beam length 40 µm, width 2 µm actual gaps of 0.2 and 0.4 µm expected resonance frequency ~10 MHz 500 µm ESSDERC 2002, Florence, Italy Slide 15
16 Gap reducing motor test SEM picture of one of the fabricated devices with gap reducing motor Motor springs Input-output electrodes Motor electrodes Resonator Stoppers ESSDERC 2002, Florence, Italy Slide 16
17 Gap reducing motor test Test of gap reducing motor: comparison of devices with 0.2 and 0.4 µm gap Transmission, db gap=0.2 µm Vbias=11 V gap=0.4 µm Vbias=40 V Frequency, Hz Resonance frequency: ~9.8 MHz Equal impedances for 40 and 11 V bias voltages: R X =283 kω Motor activation voltage: 29 V (unbiased resonators) Without gap reducing (with gap of 3.0 µm), a 2500 V bias voltage needed ESSDERC 2002, Florence, Italy Slide 17
18 Gap reducing motor test Limitation of the gap reduction method: non-ortagonality of trench walls Designed gap width Slope of etched trench walls: 89 Effective gap value is increased 15 µm Designed gap width µm Minimal achievable effective value (for 0.1 µm designed gap): ~ 0.25 µm ESSDERC 2002, Florence, Italy Slide 18
19 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 19
20 Test of resonators Dimensions of the designed clamped-clamped beam resonators and test results N*** Length, µm Width, µm Res. Frequency, MHz Q-factor ESSDERC 2002, Florence, Italy Slide 20
21 Test of resonators Plot of the quality factor versus resonance frequency for all tested resonators Experimental data * Q fo 3 2 Fitted plot Thick beams ESSDERC 2002, Florence, Italy Slide 21
22 Test of resonators Quality factor Quality factor versus air pressure L=40 µm, W=1.8µm, fo=9.8 MHz L=80 µm W=1.8 µm, fo=2.3 MHz Pressure, Torr Atmospheric pressure ESSDERC 2002, Florence, Italy Slide 22
23 Outline Introduction Resonator design Thick-film technology Post-fabrication gap reduction Gap reducing motor test Test of resonators Conclusions ESSDERC 2002, Florence, Italy Slide 23
24 Conclusions Design and test of clamped-clamped beam resonators in thickfilm epipoly technology; Original technique for post-fabrication gap reduction ; Empirical law established for qualty factor evolution with resonance frequency of resonators ; Highest reached resonance frequency with reasonable quality factor : 10 MHz (Q=2400) ESSDERC 2002, Florence, Italy Slide 24
25 Conclusions Design and test of clamped-clamped beam resonators in thickfilm epipoly technology; Original technique for post-fabrication gap reduction ; Empirical law established for qualty factor evolution with resonance frequency of resonators ; Highest reached resonance frequency with reasonable quality factor : 10 MHz (Q=2400) ESSDERC 2002, Florence, Italy Slide 25
26 Conclusions Design and test of clamped-clamped beam resonators in thickfilm epipoly technology; Original technique for post-fabrication gap reduction ; Empirical law established for qualty factor evolution with resonance frequency of resonators ; Highest reached resonance frequency with reasonable quality factor : 10 MHz (Q=2400) ESSDERC 2002, Florence, Italy Slide 26
27 Conclusions Design and test of clamped-clamped beam resonators in thickfilm epipoly technology; Original technique for post-fabrication gap reduction ; Empirical law established for qualty factor evolution with resonance frequency of resonators ; Highest reached resonance frequency with reasonable quality factor : 10 MHz (Q=2400) ESSDERC 2002, Florence, Italy Slide 27
28 Conclusions Perspectives Packaging of resonators and filters under vacuum: wafer-level encapsulation; High-order filter design: coupled-resonator architectures v i v 0 V P1 V P3 V P2 ESSDERC 2002, Florence, Italy Slide 28
29 Conclusions Perspectives Packaging of resonators and filters under vacuum: wafer-level encapsulation; High-order filter design: coupled-resonator architectures v i v 0 V P1 V P3 V P2 ESSDERC 2002, Florence, Italy Slide 29
30 Conclusions Perspectives Packagig of resonators and filters under vacuum: wafer-level encapsulation; High-order filter design: coupled-resonators architectures v i v 0 V P1 V P3 V P2 Acknowlegments This work was supported by the EU under contract number IST ESSDERC 2002, Florence, Italy Slide 30
31 Thank you for your attention ESSDERC 2002, Florence, Italy Slide 31
Design, realization and test of micro-mechanical resonators in thick-film silicon technology with postprocess electrode-to-resonator gap reducing
INSTITUTE OF PHYSICSPUBLISHING J.Micromech. Microeng. 13 (2003) 1 7 JOURNAL OFMICROMECHANICS AND MICROENGINEERING PII: S0960-1317(03)37799-X Design, realization and test of micro-mechanical resonators
More informationPROBLEM SET #7. EEC247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2015 C. Nguyen. Issued: Monday, April 27, 2015
Issued: Monday, April 27, 2015 PROBLEM SET #7 Due (at 9 a.m.): Friday, May 8, 2015, in the EE C247B HW box near 125 Cory. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely
More informationSurface Micromachining
Surface Micromachining An IC-Compatible Sensor Technology Bernhard E. Boser Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley Sensor
More informationMicromechanical Circuits for Wireless Communications
Micromechanical Circuits for Wireless Communications Clark T.-C. Nguyen Center for Integrated Microsystems Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan
More informationIN-CHIP DEVICE-LAYER THERMAL ISOLATION OF MEMS RESONATOR FOR LOWER POWER BUDGET
Proceedings of IMECE006 006 ASME International Mechanical Engineering Congress and Exposition November 5-10, 006, Chicago, Illinois, USA IMECE006-15176 IN-CHIP DEVICE-LAYER THERMAL ISOLATION OF MEMS RESONATOR
More informationINF 5490 RF MEMS. LN10: Micromechanical filters. Spring 2011, Oddvar Søråsen Jan Erik Ramstad Department of Informatics, UoO
INF 5490 RF MEMS LN10: Micromechanical filters Spring 2011, Oddvar Søråsen Jan Erik Ramstad Department of Informatics, UoO 1 Today s lecture Properties of mechanical filters Visualization and working principle
More informationINF 5490 RF MEMS. L12: Micromechanical filters. S2008, Oddvar Søråsen Department of Informatics, UoO
INF 5490 RF MEMS L12: Micromechanical filters S2008, Oddvar Søråsen Department of Informatics, UoO 1 Today s lecture Properties of mechanical filters Visualization and working principle Design, modeling
More informationINF 5490 RF MEMS. LN10: Micromechanical filters. Spring 2012, Oddvar Søråsen Department of Informatics, UoO
INF 5490 RF MEMS LN10: Micromechanical filters Spring 2012, Oddvar Søråsen Department of Informatics, UoO 1 Today s lecture Properties of mechanical filters Visualization and working principle Modeling
More informationRF MEMS for Low-Power Communications
RF MEMS for Low-Power Communications Clark T.-C. Nguyen Center for Wireless Integrated Microsystems Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan 48109-2122
More informationElectrically coupled MEMS bandpass filters Part I: With coupling element
Sensors and Actuators A 122 (2005) 307 316 Electrically coupled MEMS bandpass filters Part I: With coupling element Siavash Pourkamali, Farrokh Ayazi School of Electrical and Computer Engineering, Georgia
More informationVibrating RF MEMS for Low Power Wireless Communications
Vibrating RF MEMS for Low Power Wireless Communications Clark T.-C. Nguyen Center for Wireless Integrated Microsystems Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor,
More informationWafer-level Vacuum Packaged X and Y axis Gyroscope Using the Extended SBM Process for Ubiquitous Robot applications
Proceedings of the 17th World Congress The International Federation of Automatic Control Wafer-level Vacuum Packaged X and Y axis Gyroscope Using the Extended SBM Process for Ubiquitous Robot applications
More informationPower MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
More informationA HIGH SENSITIVITY POLYSILICON DIAPHRAGM CONDENSER MICROPHONE
To be presented at the 1998 MEMS Conference, Heidelberg, Germany, Jan. 25-29 1998 1 A HIGH SENSITIVITY POLYSILICON DIAPHRAGM CONDENSER MICROPHONE P.-C. Hsu, C. H. Mastrangelo, and K. D. Wise Center for
More informationDEVELOPMENT OF RF MEMS SYSTEMS
DEVELOPMENT OF RF MEMS SYSTEMS Ivan Puchades, Ph.D. Research Assistant Professor Electrical and Microelectronic Engineering Kate Gleason College of Engineering Rochester Institute of Technology 82 Lomb
More informationMEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION
MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION R. L. Kubena, F. P. Stratton, D. T. Chang, R. J. Joyce, and T. Y. Hsu Sensors and Materials Laboratory, HRL Laboratories, LLC Malibu, CA
More informationMechanical Spectrum Analyzer in Silicon using Micromachined Accelerometers with Time-Varying Electrostatic Feedback
IMTC 2003 Instrumentation and Measurement Technology Conference Vail, CO, USA, 20-22 May 2003 Mechanical Spectrum Analyzer in Silicon using Micromachined Accelerometers with Time-Varying Electrostatic
More informationMicro-nanosystems for electrical metrology and precision instrumentation
Micro-nanosystems for electrical metrology and precision instrumentation A. Bounouh 1, F. Blard 1,2, H. Camon 2, D. Bélières 1, F. Ziadé 1 1 LNE 29 avenue Roger Hennequin, 78197 Trappes, France, alexandre.bounouh@lne.fr
More informationThird Order Intermodulation Distortion in Capacitive-Gap Transduced Micromechanical Filters
Third Order Intermodulation Distortion in Capacitive-Gap Transduced Micromechanical Filters Jalal Naghsh Nilchi, Ruonan Liu, Scott Li, Mehmet Akgul, Tristan O. Rocheleau, and Clark T.-C. Nguyen Berkeley
More informationMicromechanical Circuits for Wireless Communications
Proceedings, 2000 European Solid-State Device Research Conference, Cork, Ireland, September 11-13, 2000, pp. 2-12. Micromechanical Circuits for Wireless Communications Clark T.-C. Nguyen Center for Integrated
More informationMEMS Sensors: From Automotive. CE Applications. MicroNanoTec Forum Innovations for Industry April 19 th Hannover, Germany
MEMS Sensors: From Automotive to CE Applications MicroNanoTec Forum Innovations for Industry 2010 April 19 th Hannover, Germany Oliver Schatz, CTO 1 Engineering April 2010 GmbH 2009. All rights reserved,
More informationZero-Bias Resonant Sensor with an Oxide-Nitride Layer as Charge Trap
Zero-Bias Resonant Sensor with an Oxide-Nitride Layer as Charge Trap Kwan Kyu Park, Mario Kupnik, Hyunjoo J. Lee, Ömer Oralkan, and Butrus T. Khuri-Yakub Edward L. Ginzton Laboratory, Stanford University
More informationBMC s heritage deformable mirror technology that uses hysteresis free electrostatic
Optical Modulator Technical Whitepaper MEMS Optical Modulator Technology Overview The BMC MEMS Optical Modulator, shown in Figure 1, was designed for use in free space optical communication systems. The
More informationMEMS in ECE at CMU. Gary K. Fedder
MEMS in ECE at CMU Gary K. Fedder Department of Electrical and Computer Engineering and The Robotics Institute Carnegie Mellon University Pittsburgh, PA 15213-3890 fedder@ece.cmu.edu http://www.ece.cmu.edu/~mems
More informationTowards a fully integrated optical gyroscope using whispering gallery modes resonators
Towards a fully integrated optical gyroscope using whispering gallery modes resonators T. Amrane 1, J.-B. Jager 2, T. Jager 1, V. Calvo 2, J.-M. Leger 1 1 CEA, LETI, Grenoble, France. 2 CEA, INAC-SP2M
More informationMicro-sensors - what happens when you make "classical" devices "small": MEMS devices and integrated bolometric IR detectors
Micro-sensors - what happens when you make "classical" devices "small": MEMS devices and integrated bolometric IR detectors Dean P. Neikirk 1 MURI bio-ir sensors kick-off 6/16/98 Where are the targets
More informationIntegrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI
1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward
More informationISSCC 2006 / SESSION 16 / MEMS AND SENSORS / 16.1
16.1 A 4.5mW Closed-Loop Σ Micro-Gravity CMOS-SOI Accelerometer Babak Vakili Amini, Reza Abdolvand, Farrokh Ayazi Georgia Institute of Technology, Atlanta, GA Recently, there has been an increasing demand
More informationDesign and Fabrication of RF MEMS Switch by the CMOS Process
Tamkang Journal of Science and Engineering, Vol. 8, No 3, pp. 197 202 (2005) 197 Design and Fabrication of RF MEMS Switch by the CMOS Process Ching-Liang Dai 1 *, Hsuan-Jung Peng 1, Mao-Chen Liu 1, Chyan-Chyi
More informationELECTROSTATIC FREE-FREE BEAM MICROELECTROMECHANICAL RESONATOR. Tianming Zhang
ELECTROSTATIC FREE-FREE BEAM MICROELECTROMECHANICAL RESONATOR by Tianming Zhang Submitted in partial fulfilment of the requirements for the degree of Master of Applied Science at Dalhousie University Halifax,
More informationFrequency-Selective MEMS for Miniaturized Low-Power Communication Devices. Clark T.-C. Nguyen, Member, IEEE. (Invited Paper)
1486 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 8, AUGUST 1999 Frequency-Selective MEMS for Miniaturized Low-Power Communication Devices Clark T.-C. Nguyen, Member, IEEE (Invited
More informationPROFILE CONTROL OF A BOROSILICATE-GLASS GROOVE FORMED BY DEEP REACTIVE ION ETCHING. Teruhisa Akashi and Yasuhiro Yoshimura
Stresa, Italy, 25-27 April 2007 PROFILE CONTROL OF A BOROSILICATE-GLASS GROOVE FORMED BY DEEP REACTIVE ION ETCHING Teruhisa Akashi and Yasuhiro Yoshimura Mechanical Engineering Research Laboratory (MERL),
More informationGaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318, MA4E1319-1, MA4E V1. Features. Description and Applications MA4E1317
Features Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Description and Applications M/A-COM's
More informationAn X band RF MEMS switch based on silicon-on-glass architecture
Sādhanā Vol. 34, Part 4, August 2009, pp. 625 631. Printed in India An X band RF MEMS switch based on silicon-on-glass architecture M S GIRIDHAR, ASHWINI JAMBHALIKAR, J JOHN, R ISLAM, C L NAGENDRA and
More informationSilicon Photonics Technology Platform To Advance The Development Of Optical Interconnects
Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects By Mieke Van Bavel, science editor, imec, Belgium; Joris Van Campenhout, imec, Belgium; Wim Bogaerts, imec s associated
More informationHigh-Q UHF Micromechanical Radial-Contour Mode Disk Resonators
1298 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 14, NO. 6, DECEMBER 2005 High-Q UHF Micromechanical Radial-Contour Mode Disk Resonators John R. Clark, Member, IEEE, Wan-Thai Hsu, Member, IEEE, Mohamed
More informationMicro and Smart Systems
Micro and Smart Systems Lecture - 39 (1)Packaging Pressure sensors (Continued from Lecture 38) (2)Micromachined Silicon Accelerometers Prof K.N.Bhat, ECE Department, IISc Bangalore email: knbhat@gmail.com
More informationBody-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches
University of Pennsylvania From the SelectedWorks of Nipun Sinha 29 Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches Nipun Sinha, University of Pennsylvania Timothy S.
More informationMEMS Technologies and Devices for Single-Chip RF Front-Ends
MEMS Technologies and Devices for Single-Chip RF Front-Ends Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Science University of Michigan Ann Arbor, Michigan 48105-2122 CCMT 06 April 25,
More informationMICROMACHINED INTERFEROMETER FOR MEMS METROLOGY
MICROMACHINED INTERFEROMETER FOR MEMS METROLOGY Byungki Kim, H. Ali Razavi, F. Levent Degertekin, Thomas R. Kurfess G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta,
More informationNew Type of RF Switches for Signal Frequencies of up to 75 GHz
New Type of RF Switches for Signal Frequencies of up to 75 GHz Steffen Kurth Fraunhofer ENAS, Chemnitz, Germany Page 1 Contents Introduction and motivation RF MEMS technology Design and simulation Test
More informationDesign and Simulation of Compact, High Capacitance Ratio RF MEMS Switches using High-K Dielectric Material
Advance in Electronic and Electric Engineering. ISSN 2231-1297, Volume 3, Number 5 (2013), pp. 579-584 Research India Publications http://www.ripublication.com/aeee.htm Design and Simulation of Compact,
More informationA New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 5, MAY 2001 831 A New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design Gerhard Knoblinger, Member, IEEE,
More informationMEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION
MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION R. L. Kubena, F. P. Stratton, D. T. Chang, R. J. Joyce, and T. Y. Hsu Sensors and Materials Laboratory, HRL Laboratories, LLC Malibu, CA
More informationVibrating MEMS resonators
Vibrating MEMS resonators Vibrating resonators can be scaled down to micrometer lengths Analogy with IC-technology Reduced dimensions give mass reduction and increased spring constant increased resonance
More informationMicro- & Nano-technologies pour applications hyperfréquence à Thales Research &Technology Afshin Ziaei, Sébastien Demoustier, Eric Minoux
Micro- & Nano-technologies pour applications hyperfréquence à Thales Research &Technology Afshin Ziaei, Sébastien Demoustier, Eric Minoux Outline Application hyperfréquence à THALES: Antenne à réseau réflecteur
More informationFrequency-Selective MEMS for Miniaturized Communication Devices
C. T.-C. Nguyen, Frequency-selective MEMS for miniaturized communication devices (invited), Proceedings, 1998 IEEE Aerospace Conference, vol. 1, Snowmass, Colorado, March 21-28, 1998, pp. 445-460. Frequency-Selective
More informationBROADBAND CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCERS RANGING
BROADBAND CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCERS RANGING FROM 1 KHZ TO 6 MHZ FOR IMAGING ARRAYS AND MORE Arif S. Ergun, Yongli Huang, Ching-H. Cheng, Ömer Oralkan, Jeremy Johnson, Hemanth Jagannathan,
More informationMicromachining Technologies for Miniaturized Communication Devices
Micromachining Technologies for Miniaturized Communication Devices Clark T.-C. Nguyen Center for Integrated Sensors and Circuits Department of Electrical Engineering and Computer Science University of
More informationGap Reduction Based Frequency Tuning for AlN Capacitive-Piezoelectric Resonators
Gap Reduction Based Frequency Tuning for AlN Capacitive-Piezoelectric Resonators Robert A. Schneider, Thura Lin Naing, Tristan O. Rocheleau, and Clark T.-C. Nguyen EECS Department, University of California,
More informationHigh-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers
High-Ohmic Resistors using Nanometer-Thin Pure-Boron Chemical-Vapour-Deposited Layers Negin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver Delft University of Technology The Netherlands ESSDERC
More informationHigh-density CMOS Bioelectronic Chip
Direktes Ankoppeln von Hirnzellen an Mikroelektronik 20 μm 50 m Andreas Hierlemann Slide 1 Outline Bioelectronics Fundamentals electrogenic cells action potentials measurements of electric activity CMOS
More informationHigh-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors
High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors Veerendra Dhyani 1, and Samaresh Das 1* 1 Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi-110016,
More informationMEMS Reference Oscillators. EECS 242B Fall 2014 Prof. Ali M. Niknejad
MEMS Reference Oscillators EECS 242B Fall 2014 Prof. Ali M. Niknejad Why replace XTAL Resonators? XTAL resonators have excellent performance in terms of quality factor (Q ~ 100,000), temperature stability
More informationAE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015
Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter
More informationECE4902 B2015 HW Set 1
ECE4902 B2015 HW Set 1 Due in class Tuesday November 3. To make life easier on the graders: Be sure your NAME and ECE MAILBOX NUMBER are prominently displayed on the upper right of what you hand in. When
More informationLecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
More informationSubstrate Noise Isolation Improvement by Helium-3 Ion Irradiation Technique in a Triple-well CMOS Process
Substrate Noise Isolation Improvement by Helium-3 Ion Irradiation Technique in a Triple-well CMOS Process Ning Li 1, Takeshi Inoue 2, Takuichi Hirano 1, Jian Pang 1, Rui Wu 1, Kenichi Okada 1, Hitoshi
More informationLecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
More informationMicromechanical Circuits for Communication Transceivers
Micromechanical Circuits for Communication Transceivers C. T.-C. Nguyen, Micromechanical circuits for communication transceivers (invited), Proceedings, 2000 Bipolar/BiCMOS Circuits and Technology Meeting
More informationHigh Power RF MEMS Switch Technology
High Power RF MEMS Switch Technology Invited Talk at 2005 SBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics Conference Dr Jia-Sheng Hong Heriot-Watt University Edinburgh U.K. 1
More informationTransistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.
Unit 1 Basic MOS Technology Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Levels of Integration:- i) SSI:-
More informationMEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications
MEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications Part I: RF Applications Introductions and Motivations What are RF MEMS? Example Devices RFIC RFIC consists of Active components
More informationSupplementary information for
Supplementary information for A fast and low power microelectromechanical system based nonvolatile memory device Sang Wook Lee, Seung Joo Park, Eleanor E. B. Campbell & Yung Woo Park The supplementary
More informationGRADE Graphene-based Devices and Circuits for RF Applications Collaborative Project
GRADE Graphene-based Devices and Circuits for RF Applications Collaborative Project WP 6 D6.1 DC, S parameter and High Frequency Noise Characterisation of GFET devices Main Authors: Sebastien Fregonese,
More informationSemiconductor Physics and Devices
Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because
More informationTwo-Dimensional Capacitive Micromachined Ultrasonic Transducer (CMUT) Arrays for a Miniature Integrated Volumetric Ultrasonic Imaging System
Two-Dimensional Capacitive Micromachined Ultrasonic Transducer (CMUT) Arrays for a Miniature Integrated Volumetric Ultrasonic Imaging System X. Zhuang, I. O. Wygant, D. T. Yeh, A. Nikoozadeh, O. Oralkan,
More informationSupplementary Figure S1. Characterization using X-ray diffraction (XRD). (a) Starting titanium (Ti) foil used for the synthesis (JCPDS No ).
Supplementary Figure S1. Characterization using X-ray diffraction (XRD). (a) Starting titanium (Ti) foil used for the synthesis (JCPDS No. 65-3362). (b) Oxidized Rutile titanium dioxide (TiO 2 ) obtained
More informationMEMS On-wafer Evaluation in Mass Production Testing At the Earliest Stage is the Key to Lowering Costs
MEMS On-wafer Evaluation in Mass Production Testing At the Earliest Stage is the Key to Lowering Costs Application Note Recently, various devices using MEMS technology such as pressure sensors, accelerometers,
More information4H-SiC Planar MESFET for Microwave Power Device Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.5, NO.2, JUNE, 2005 113 4H-SiC Planar MESFET for Microwave Power Device Applications Hoon Joo Na*, Sang Yong Jung*, Jeong Hyun Moon*, Jeong Hyuk Yim*,
More informationYoshihiko ISOBE Hiroshi MUTO Tsuyoshi FUKADA Seiji FUJINO
Yoshihiko ISOBE Hiroshi MUTO Tsuyoshi FUKADA Seiji FUJINO Increased performance requirements in terms of the environment, safety and comfort have recently been imposed on automobiles to ensure efficient
More informationAlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz
From the SelectedWorks of Chengjie Zuo April, 2009 AlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz Matteo Rinaldi, University of Pennsylvania Chiara Zuniga, University of Pennsylvania Chengjie
More informationOutline. 1 Introduction. 2 Basic IC fabrication processes. 3 Fabrication techniques for MEMS. 4 Applications. 5 Mechanics issues on MEMS MDL NTHU
Outline 1 Introduction 2 Basic IC fabrication processes 3 Fabrication techniques for MEMS 4 Applications 5 Mechanics issues on MEMS 2.2 Lithography Reading: Runyan Chap. 5, or 莊達人 Chap. 7, or Wolf and
More informationIntegrated Electrostatically- and Piezoelectrically- Transduced Contour-Mode MEMS Resonator on Silicon-on-Insulator (SOI) Wafer
University of South Florida Scholar Commons Graduate Theses and Dissertations Graduate School January 2014 Integrated Electrostatically- and Piezoelectrically- Transduced Contour-Mode MEMS Resonator on
More informationDistributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. HPND- 4005 Beam Lead PIN Diode Data Sheet Description The HPND-4005 planar
More informationrf microelectromechanical system device with a lateral field-emission detector*
rf microelectromechanical system device with a lateral field-emission detector* Kiyotaka Yamashita a and Winston Sun Kuniyuki Kakushima Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-Ku, Yokohama,
More informationINVENTION DISCLOSURE- ELECTRONICS SUBJECT MATTER IMPEDANCE MATCHING ANTENNA-INTEGRATED HIGH-EFFICIENCY ENERGY HARVESTING CIRCUIT
INVENTION DISCLOSURE- ELECTRONICS SUBJECT MATTER IMPEDANCE MATCHING ANTENNA-INTEGRATED HIGH-EFFICIENCY ENERGY HARVESTING CIRCUIT ABSTRACT: This paper describes the design of a high-efficiency energy harvesting
More informationA NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC
Page 342 A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC Trong-Huang Lee', Chen-Yu Chi", Jack R. East', Gabriel M. Rebeiz', and George I. Haddad" let Propulsion Laboratory California
More informationMICROSONICS. Microsonics 39, rue des Granges Galand, Saint Avertin, France Phone : +(33) (0)
For more News of NDT.net click: www.ndt.net/search/docs.php3 MICROSONICS The finite element method (FEM) is very suitable for structural simulation, specially when the structure is vibrating in vacuum.
More informationA RECONFIGURABLE IMPEDANCE MATCHING NETWORK EMPLOYING RF-MEMS SWITCHES
Author manuscript, published in "DTIP 2007, Stresa, lago Maggiore : Italy (2007)" Stresa, Italy, 25-27 April 2007 EMPLOYING RF-MEMS SWITCHES M. Bedani *, F. Carozza *, R. Gaddi *, A. Gnudi *, B. Margesin
More informationConference Paper Cantilever Beam Metal-Contact MEMS Switch
Conference Papers in Engineering Volume 2013, Article ID 265709, 4 pages http://dx.doi.org/10.1155/2013/265709 Conference Paper Cantilever Beam Metal-Contact MEMS Switch Adel Saad Emhemmed and Abdulmagid
More informationAspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G
A 15 GHz and a 2 GHz low noise amplifier in 9 nm RF CMOS Aspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G Published in: Topical Meeting on Silicon Monolithic
More informationSilicon Beam Lead Schottky Barrier Mixer Diodes
ilicon chottky Barrier Mixer Diodes Features Ideal for MIC Low 1/f Noise Low Intermodulation Distortion Low Turn On Hermetically ealed Packages PC Controlled Wafer Fabrication Description Alpha beam lead
More information2.97-GHz CVD Diamond Ring Resonator With Q >40,000
Proceedings, 2012 IEEE Int. Frequency Control Symposium, Baltimore, Maryland, May 22-24, 2012, to be published. 2.97-GHz CVD Diamond Ring Resonator With Q >40,000 Thura Lin Naing, Turker Beyazoglu, Lingqi
More informationReview of Power IC Technologies
Review of Power IC Technologies Ettore Napoli Dept. Electronic and Telecommunication Engineering University of Napoli, Italy Introduction The integration of Power and control circuitry is desirable for
More informationA New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices.
A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices. M C Wilson, P H Osborne, S Thomas and T Cook Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2
More informationHigh-overtone Bulk Acoustic Resonator (HBAR) as passive sensor: towards microwave wireless interrogation
Nov. 21 2012 ewise () as () as J.-M Friedt 1, N. Chrétien 1, T. Baron 2, É. Lebrasseur2, G. Martin 2, S. Ballandras 1,2 1 SENSeOR, Besançon, France 2 FEMTO-ST Time & Frequency, Besançon, France Emails:
More informationFeature-level Compensation & Control
Feature-level Compensation & Control 2 Sensors and Control Nathan Cheung, Kameshwar Poolla, Costas Spanos Workshop 11/19/2003 3 Metrology, Control, and Integration Nathan Cheung, UCB SOI Wafers Multi wavelength
More informationDesign, Characterization & Modelling of a CMOS Magnetic Field Sensor
Design, Characteriation & Modelling of a CMOS Magnetic Field Sensor L. Latorre,, Y.Bertrand, P.Haard, F.Pressecq, P.Nouet LIRMM, UMR CNRS / Universit de Montpellier II, Montpellier France CNES, Quality
More informationHigh-κ dielectrically transduced MEMS thickness shear mode resonators and tunable channel-select RF filters
Sensors and Actuators A 136 (2007) 527 539 High-κ dielectrically transduced MEMS thickness shear mode resonators and tunable channel-select RF filters Hengky Chandrahalim,1, Dana Weinstein 1, Lih Feng
More informationSimulation and test of 3D silicon radiation detectors
Simulation and test of 3D silicon radiation detectors C.Fleta 1, D. Pennicard 1, R. Bates 1, C. Parkes 1, G. Pellegrini 2, M. Lozano 2, V. Wright 3, M. Boscardin 4, G.-F. Dalla Betta 4, C. Piemonte 4,
More informationSimulation of new P-type strip detectors with trench to enhance the charge multiplication effect in the n- type electrodes
Simulation of new P-Type strip detectors RESMDD 10, Florence 12-15.October.2010 1/15 Simulation of new P-type strip detectors with trench to enhance the charge multiplication effect in the n- type electrodes
More informationAE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014
Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current
More informationCMP for More Than Moore
2009 Levitronix Conference on CMP Gerfried Zwicker Fraunhofer Institute for Silicon Technology ISIT Itzehoe, Germany gerfried.zwicker@isit.fraunhofer.de Contents Moore s Law and More Than Moore Comparison:
More informationSwitch-less Dual-frequency Reconfigurable CMOS Oscillator using One Single Piezoelectric AlN MEMS Resonator with Co-existing S0 and S1 Lamb-wave Modes
From the SelectedWorks of Chengjie Zuo January, 11 Switch-less Dual-frequency Reconfigurable CMOS Oscillator using One Single Piezoelectric AlN MEMS Resonator with Co-existing S and S1 Lamb-wave Modes
More informationIntroduction to Microeletromechanical Systems (MEMS) Lecture 12 Topics. MEMS Overview
Introduction to Microeletromechanical Systems (MEMS) Lecture 2 Topics MEMS for Wireless Communication Components for Wireless Communication Mechanical/Electrical Systems Mechanical Resonators o Quality
More informationBehavioral Modeling and Simulation of Micromechanical Resonator for Communications Applications
Cannes-Mandelieu, 5-7 May 2003 Behavioral Modeling and Simulation of Micromechanical Resonator for Communications Applications Cecile Mandelbaum, Sebastien Cases, David Bensaude, Laurent Basteres, and
More informationABSTRACT. In this work, piezoelectric resonators based on single crystal Al 0.3 Ga 0.7 As films
ABSTRACT Title of dissertation: PIEZOELECTRIC MICROBEAM RESONATORS BASED ON EPITAXIAL Al 0.3 Ga 0.7 As FILMS Lihua Li, Doctor of Philosophy, 2005 Dissertation directed by: Professor Don DeVoe Department
More informationEE C245 ME C218 Introduction to MEMS Design
EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 20: Equivalent
More informationLow On-Resistance Trench Lateral Power MOS Technology
Low On-Resistance Trench Lateral Power MO Technology Akio ugi Mutsumi awada Naoto Fujishima 1. Introduction Market demands for smaller sized, lighter weight, lower power consuming and higher efficiency
More information