Vibrating RF MEMS for Low Power Wireless Communications

Size: px
Start display at page:

Download "Vibrating RF MEMS for Low Power Wireless Communications"

Transcription

1 Vibrating RF MEMS for Low Power Wireless Communications Clark T.-C. Nguyen Center for Wireless Integrated Microsystems Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan

2 Outline Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions

3 Frequency Division Multiplexed Communications Information is transmitted in specific frequency channels within specific bands Transmitted Power Band GSM Band Adj. Band DCS1800 Band Frequency

4 Frequency Division Multiplexed Communications Information is transmitted in specific frequency channels within specific bands Transmitted Power Band Filter GSM Band Adj. Band DCS1800 Band Frequency

5 Frequency Division Multiplexed Communications Information is transmitted in specific frequency channels within specific bands Transmitted Power Band Filter GSM Band Adj. Band DCS1800 Band Need: high frequency selectivity need high-q Frequency

6 Need for High-Q: Selective Low-Loss Filters In resonator-based filters: high tank Q low insertion loss At right: a 0.3% bandwidth 70 MHz (simulated) heavy insertion loss for resonator Q < 5,000

7 Need for High-Q: Oscillator Stability Main Function: provide a stable output frequency Difficulty: superposed noise degrades frequency stability Sustaining Amplifier A v o Ideal Sinusoid: v ( ) = Vosin 2πf t o t o Frequency-Selective Tank i v o i Higher Higher Q T O Real Sinusoid: v ( ) = Vo+ ε ( t) sin ( ) 2πf t + θ t o t ω ο =2π/T O o Tighter Tighter Spectrum Spectrum ω ω ο ω Zero-Crossing Point ω ο ω

8 Received Power Pre-Select Filter An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF ω IF ω LO ω RF Frequency

9 Received Power Pre-Select Filter An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF ω IF ω LO ω RF Frequency

10 Received Power Pre-Select Filter Interfering Signal An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power IF Filter ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF Ideal Local Oscillator ω IF ω IF ω LO ω RF Frequency

11 Received Power Pre-Select Filter Interfering Signal An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power IF Filter ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF Ideal Local Oscillator ω IF ω IF ω LO ω RF Frequency

12 Received Power MEMS for Wireless Communications Impact of Phase Noise on Receivers Pre-Select Filter Interfering Signal Desired Signal Interference From Tail of Phase Noise Spectrum IF Filter IF Power Local Osc Power ω IF ω LO ω IF ω RF Frequency Local Oscillator With Phase Noise Mixer ω IF Signal Not Recoverable ω IF ω LO ω RF Frequency

13 Attaining High-Q Problem: IC s cannot achieve Q s in the thousands transistors consume too much power to get Q on-chip spiral inductors Q s no higher than ~10 off-chip inductors Q s in the range of 100 s Observation: vibrating mechanical resonances Q > 1,000 Example: quartz crystal resonators (e.g., in wristwatches) extremely high Q s ~ 10,000 or higher (Q ~ 10 6 possible) mechanically vibrates at a distinct frequency in a thickness-shear mode

14 Miniaturization of Transceivers High-Q functionality required by oscillators and filters cannot be realized using standard IC components use off-chip mechanical components SAW, ceramic, and crystal resonators pose bottlenecks against ultimate miniaturization

15 So Many Passive Components! The total area on a printed circuit board for a wireless phone is often dominated by passive components passives pose a bottleneck on the ultimate miniaturization of transceivers Transistor Transistor Chips Chips Quartz Quartz Crystal Crystal Inductors Inductors Capacitors Capacitors Resistors Resistors IF IF Filter Filter (SAW) (SAW) RF RF Filter Filter (ceramic) (ceramic) IF IF Filter Filter (SAW) (SAW)

16 Surface Micromachining Fabrication steps compatible with planar IC processing

17 Post-CMOS Circuits+μMechanics Integration Completely monolithic, low phase noise, high-q oscillator (effectively, an integrated crystal oscillator) [Nguyen, Howe] Oscilloscope Output Waveform To allow the use of >600 o C processing temperatures, tungsten (instead of aluminum) is used for metallization

18 Target Application: Integrated Transceivers Off-chip high-q mechanical components present bottlenecks to miniaturization replace them with μmechanical versions

19 Outline Κ Κ Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions

20 Vertically-Driven Micromechanical Resonator To date, most used design to achieve VHF frequencies Smaller mass higher frequency range and lower series C. RT.-C. x Nguyen

21 Fabricated HF μmechanical Resonator Surface-micromachined, POCl 3 -doped polycrystalline silicon Extracted Q = 8,000 (vacuum) Freq. influenced by dc-bias and anchor effects

22 Desired Filter Characteristics Small shape factor generally preferred

23 Micromechanical Circuits MEMS for Wireless Communications A single mechanical beam can t really do much on its own But use many mechanical beams attached together in a circuit, and attain a more complex, more useful function Input Force F i Output Displacement x o F i x o t Key Design Property: High Q t

24 Desired Filter Characteristics Small shape factor generally preferred

25 MEMS for Wireless Communications Micromechanical Filter Circuit

26 Ideal Spring-Coupled μmechanical Filter Symmetric Mode Anti-Symmetric Mode BW ~ k s12 k r c r 1 m r1 k s 12 m r2 c r 2 k r 1 k r 2

27 MEMS for Wireless Communications Micromechanical Filter Circuit

28 HF Spring-Coupled Micromechanical Filter

29 High-Order μmechanical Filter

30 Electromechanical Mixing MEMS for Wireless Communications ω o =ω IF Electrical Signal Input Filter Response ω IF ω LO ω RF ω Mechanical Signal Input ω IF ω LO ω RF ω

31 Micromechanical Mixer-Filter [Wong, Nguyen 1998]

32 Micromechanical Switch MEMS for Wireless Communications Operate the micromechanical beam in an up/down binary fashion [C. Goldsmith, 1995] Performance: I.L.~0.1dB, IIP3 ~ 66dBm (extremely linear) Issues: switching voltage ~ 20V, switching time: 1-5μs

33 Voltage-Tunable High-Q Capacitor Micromachined, movable, aluminum plate-to-plate capacitors Tuning range exceeding that of on-chip diode capacitors and on par with off-chip varactor diode capacitors Challenges: microphonics, tuning range truncated by pull-in

34 Suspended, Stacked Spiral Inductor Strategies for maximizing Q: 15μm-thick, electroplated Cu windings reduces series R suspended above the substrate reduces substrate loss

35 MEMS-Replaceable Transceiver Components [Yao 1997] [Bannon, Clark, Nguyen 1996] [Wang, Yu, Nguyen 1999] [J.-B. Yoon, et al. 1999] [Young, Boser 1996] A large number of off-chip high-q components replaceable with μmachined versions; e.g., using μmachined resonators, switches, capacitors, and inductors

36 Miniaturization of Transceivers via MEMS Off-chip high-q mechanical components present bottlenecks to miniaturization replace them with μmechanical versions

37 MEMS-Based Receiver Architecture Most Direct Approach: replace off-chip components (in orange) with μmechanical versions (in green) L 1 ~2dB 1 ~2dB L 3 ~6dB 3 ~6dB L 5 ~12dB 5 ~12dB NF NF = 8.8dB 8.8dB Higher Q L 1 ~0.3dB 1 ~0.3dB L 3 ~0.5dB 3 ~0.5dB L 5 ~1dB 5 ~1dB Replace with MEMS Antenna Antenna Diversity Diversity for for resilience resilience against against fading fading Obvious Benefit: substantial size reduction NF NF = 2.8dB 2.8dB

38 Outline Κ Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions

39 Received Power MEMS for Wireless Communications Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity case: wideband front-end filtering Desired Signal RF Pre-Select Filter (Res.Q ~500) Antenna Frequency

40 Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity Received Power case: wideband front-end filtering Desired Signal RF Pre-Select Filter (Res.Q ~500) Out-of-Band Interferers Removed Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Problem: helpful, but does not go far enough subsequent electronics must still have more dynamic range than really necessary power wasted

41 Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity Received Power better approach: narrowband front-end filtering Desired Signal RF Pre-Select Filter (Res.Q ~500) Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s)

42 Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity Received Power better approach: narrowband front-end filtering Desired Signal RF Channel-Select Filter (Q ~500) (Q ~10,000) Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s)

43 Received Power Desired Signal MEMS for Wireless Communications Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity better approach: narrowband front-end filtering RF Channel-Select Filter (Q ~500) (Q ~10,000) All Interferers Removed Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Result: substantial power savings in subsequent circuits relaxed dynamic range requirements relaxed oscillator phase noise requirements

44 Received Power Front-End Channel Selector MEMS for Wireless Communications Power Saving Strategy: select channels right up at RF One Approach: Use a highly selective low-loss filter that is tunable from channel to channel: Filter On Filter On Filter On Filter On Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Problem: high filter selectivity (i.e., high Q) often precludes tunability

45 Voltage-Controllable Center Frequency

46 Received Power Front-End Channel Selector MEMS for Wireless Communications Solution: rather than cover the band by tuning, cover with a bank of switchable filters Filter On Filter On Filter On Filter On Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Problem: macroscopic high-q filters are too big Requirement: tiny filters μmechanical high-q filters present a good solution

47 MEMS vs. SAW Comparison MEMS offers the same or better high-q frequency selectivity with orders of magnitude smaller size

48 Micromechanical RF Pre-Selector Use a massively parallel array of tunable, switchable filters tiny size and zero dc power consumption of μmechanical filters allows this

49 MEMS-Based Transceiver Architecture Use numerous filters in a switchable bank to allow front-end channel selection Allows more efficient PA and lower dynamic range LNA and mixer Micromechanics are shaded in green

50 MEMS-Based Transceiver Architecture When replace FET switch: I.L. goes from 2dB to 0.1dB Save 280mW when transmitting 500mW Micromechanics are shaded in green

51 MEMS-Based Transceiver Architecture Use transducer nonlinearity to obtain a mixer function, followed by a filter Eliminate active mixer power Micromechanics are shaded in green

52 MEMS-Based Transceiver Architecture Substantial power savings if resonator Q>1,000 Another example of Q versus power trade-off Micromechanics are shaded in green

53 MEMS-Based Transceiver Architecture Low Loss Eliminate the RF LNA? If possible, could substantially reduce RF front-end power Micromechanics are shaded in green

54 Outline Κ Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions

55 Research Issue: Frequency Extension To extend the frequency range shrink beam dimensions must shrink gap d dimensions, as well Possible Problem: Q reduction with frequency material and anchor loss mechanisms solution: defensive mechanical design, materials engineering

56 Anchor Dissipation in Fixed-Fixed Beams f o Q

57 92 MHz Free-Free Beam μresonator Free-free beam μmechanical resonator with non-intrusive supports reduce anchor dissipation higher Q

58 92 MHz Free-Free Beam μresonator Free-free beam μmechanical resonator with non-intrusive supports reduce anchor dissipation higher Q

59 Research Issue: Frequency Extension To extend the frequency range shrink beam dimensions must shrink gap d dimensions, as well Possible Problem: Q reduction with frequency material and anchor loss mechanisms solution: defensive mechanical design, materials engineering Possible Problem: size vs. power handling trade-offs may limit the degree of size reduction allowable solution: transducer design, other vibration modes

60 156 MHz Radial Contour-Mode Disk μmechanical Resonator Below: Balanced radial-mode disk polysilicon μmechanical resonator (34 μm diameter) μmechanical Disk Resonator Metal Electrode R Design/Performance: R=17μm, t=2μm d=1,000å, V P =35V f o =156.23MHz, Q=9,400 Metal Electrode Anchor f o =156MHz Q=9,400 [Clark, Hsu, Nguyen IEDM 00]

61 1000Å Lateral Electrode-to-Disk Gaps Achieved via a fabrication process that combines polysilicon surface micromachining, metal electroplating, and sidwall spacer technologies μmechanical Disk Resonator 1,000Å Metal Electrode 2 μm Metal Electrode [Clark, Hsu, Nguyen IEDM 00]

62 Other Research Issues:

63 μmechanical Filter Passband Correction [Wang, Nguyen, 1997] Problems: too many interconnect leads, Δf small at VHF Need: a permanent frequency trimming technique

64 Research Issue: Frequency Trimming For banks of filters or resonators need automated trimming on a massive scale, preferably voltage-activated Localized Annealing: current through structure heats it like a filament extremely fast thermal time constants allow for ultra-rapid annealing 16 ppm f o shift per anneal pulse [Wang, Wong, Hsu, Nguyen 1997]

65 Research Issue: Thermal Stability [Wang, Yu, Nguyen 2000] Need temperature compensation or control methods

66 Geometric-Stress Temperature Compensation Geometrically generate a stress vs. temperature function that compensates Young s modulus thermal variation L 1 L 2

67 Fabricated Temp.-Insensitive μresonator [Hsu, Clark, Nguyen IEDM 00] Design/Performance: L 1 =39μm, L 2 =39μm, d =1038Å W 1 =2.5μm, W 2 =20μm, t =2μm V P =16V, f o =13.49MHz, Q=10,317

68 Demonstration of Geometric-Stress Temperature Compensation Below: polysilicon structure, silicon substrate [Hsu, Clark, Nguyen 2000] Less than 200 ppm f o variation over 80 o C for L 2 /L 1 =60/40

69 Research Issue: Thermal Stability [Wang, Yu, Nguyen 2000] Need temperature compensation or control methods

70 Research Issue: Contamination Sensitivity Contamination fluctuations f o and Q fluctuations Typical μresonator mass: kg Larger frequency fluctuations for microsized resonators than for more massive quartz crystals Factors influencing contamination-derived instabilities contaminant molecule size and weight pressure and temperature Need encapsulation for contamination protection

71 Research Issue: Vacuum Encapsulation Below: localized heated bonding to seal a vacuum cap over a released micromechanical resonator Schematic of the Bonding Encapsulation Procedure Broken Glass Cap V anneal Glass Cap Microcavity Q µheater and Aluminum Solder weeks at 25 mtorr [Cheng, Hsu, Lin, Nguyen, Najafi 2000] Weeks

72 Conclusions Via enhanced selectivity on a massive scale, micromechanical circuits using high-q elements have the potential for shifting communication transceiver design paradigms, greatly enhancing their capabilities Advantages of Micromechanical Circuits: orders of magnitude smaller size than present mechanical resonator devices better performance than other single-chip solutions potentially large reduction in power consumption alternative transceiver architectures that maximize the use of high-q, frequency selective devices for improved performance but there s much more to it than just the above...

73 Conclusions Compelling parallels between MEMS and integrated transistor signal processor technologies: Before 1960: discrete transistor circuits wired on boards with limited functionality After IC s: VLSI CPU s and memory circuits have revolutionized the way things are done Today: discrete mechanical circuits coupled by welded wires with limited functionality With VLSI Micromechanical Signal Processors: functions never before possible now realizable via a combination of transistor and mechanical circuits? a functional and system architectural revolution reminiscent of the IC revolution? potential for true revolution? but there is much work yet to be done

74 Acknowledgments Numerous authors referenced throughout Former and present graduate students, especially Kun Wang, Frank Bannon III, and Ark-Chew Wong, who are largely responsible for the micromechanical filter work, and Wan-Thai Hsu and Mustafa Demirci, who are largely responsible for the resonator work My government funding sources: mainly DARPA and an NSF Engineering Research Center

Micromechanical Circuits for Wireless Communications

Micromechanical Circuits for Wireless Communications Micromechanical Circuits for Wireless Communications Clark T.-C. Nguyen Center for Integrated Microsystems Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan

More information

RF MEMS for Low-Power Communications

RF MEMS for Low-Power Communications RF MEMS for Low-Power Communications Clark T.-C. Nguyen Center for Wireless Integrated Microsystems Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan 48109-2122

More information

Micromechanical Signal Processors for Low-Power Communications Instructor: Clark T.-C. Nguyen

Micromechanical Signal Processors for Low-Power Communications Instructor: Clark T.-C. Nguyen First International Conference and School on Nanoscale/Molecular Mechanics: Maui, HI; May 2002 School Lecture/Tutorial on Micromechanical Signal Processors for Low-Power Communications Instructor: Clark

More information

MEMS Technologies for Communications

MEMS Technologies for Communications MEMS Technologies for Communications Clark T.-C. Nguyen Program Manager, MPG/CSAC/MX Microsystems Technology Office () Defense Advanced Research Projects Agency Nanotech 03 Feb. 25, 2003 Outline Introduction:

More information

MEMS Technologies and Devices for Single-Chip RF Front-Ends

MEMS Technologies and Devices for Single-Chip RF Front-Ends MEMS Technologies and Devices for Single-Chip RF Front-Ends Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Science University of Michigan Ann Arbor, Michigan 48105-2122 CCMT 06 April 25,

More information

Micromachining Technologies for Miniaturized Communication Devices

Micromachining Technologies for Miniaturized Communication Devices Micromachining Technologies for Miniaturized Communication Devices Clark T.-C. Nguyen Center for Integrated Sensors and Circuits Department of Electrical Engineering and Computer Science University of

More information

Microelectromechanical Devices for Wireless Communications

Microelectromechanical Devices for Wireless Communications Microelectromechanical Devices for Wireless Communications Clark T.-C. Nguyen Center for Integrated Sensors and Circuits Department of Electrical Engineering and Computer Science University of Michigan

More information

Micromechanical Circuits for Wireless Communications

Micromechanical Circuits for Wireless Communications Proceedings, 2000 European Solid-State Device Research Conference, Cork, Ireland, September 11-13, 2000, pp. 2-12. Micromechanical Circuits for Wireless Communications Clark T.-C. Nguyen Center for Integrated

More information

RF MEMS in Wireless Architectures

RF MEMS in Wireless Architectures 26.4 RF MEMS in Wireless Architectures Clark T.-C. Nguyen DARPA/MTO 3701 North Farifax Drive, Arlington, Virginia 22203-1714 (On leave from the University of Michigan, Ann Arbor, Michigan 48109-2122) 1-571-218-4586

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2007

EE C245 ME C218 Introduction to MEMS Design Fall 2007 EE C245 ME C218 Introduction to MEMS Design Fall 2007 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 1: Definition

More information

ABSTRACT 1. INTRODUCTION

ABSTRACT 1. INTRODUCTION C. T.-C. Nguyen, Micromechanical components for miniaturized low-power communications (invited plenary), Proceedings, 1999 IEEE MTT-S International Microwave Symposium RF MEMS Workshop (on Microelectromechanical

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2010

EE C245 ME C218 Introduction to MEMS Design Fall 2010 Instructor: Prof. Clark T.-C. Nguyen EE C245 ME C218 Introduction to MEMS Design Fall 2010 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley

More information

EE C245 ME C218 Introduction to MEMS Design

EE C245 ME C218 Introduction to MEMS Design EE C245 ME C218 Introduction to MEMS Design Fall 2008 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 1: Definition

More information

Micromechanical Circuits for Communication Transceivers

Micromechanical Circuits for Communication Transceivers Micromechanical Circuits for Communication Transceivers C. T.-C. Nguyen, Micromechanical circuits for communication transceivers (invited), Proceedings, 2000 Bipolar/BiCMOS Circuits and Technology Meeting

More information

Introduction to Microeletromechanical Systems (MEMS) Lecture 12 Topics. MEMS Overview

Introduction to Microeletromechanical Systems (MEMS) Lecture 12 Topics. MEMS Overview Introduction to Microeletromechanical Systems (MEMS) Lecture 2 Topics MEMS for Wireless Communication Components for Wireless Communication Mechanical/Electrical Systems Mechanical Resonators o Quality

More information

MEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications

MEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications MEMS for RF, Micro Optics and Scanning Probe Nanotechnology Applications Part I: RF Applications Introductions and Motivations What are RF MEMS? Example Devices RFIC RFIC consists of Active components

More information

Frequency-Selective MEMS for Miniaturized Low-Power Communication Devices. Clark T.-C. Nguyen, Member, IEEE. (Invited Paper)

Frequency-Selective MEMS for Miniaturized Low-Power Communication Devices. Clark T.-C. Nguyen, Member, IEEE. (Invited Paper) 1486 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 47, NO. 8, AUGUST 1999 Frequency-Selective MEMS for Miniaturized Low-Power Communication Devices Clark T.-C. Nguyen, Member, IEEE (Invited

More information

EE C245 ME C218 Introduction to MEMS Design

EE C245 ME C218 Introduction to MEMS Design EE C45 ME C18 Introduction to MEMS Design Fall 008 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 7: Noise &

More information

DEVELOPMENT OF RF MEMS SYSTEMS

DEVELOPMENT OF RF MEMS SYSTEMS DEVELOPMENT OF RF MEMS SYSTEMS Ivan Puchades, Ph.D. Research Assistant Professor Electrical and Microelectronic Engineering Kate Gleason College of Engineering Rochester Institute of Technology 82 Lomb

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2010

EE C245 ME C218 Introduction to MEMS Design Fall 2010 Basic Concept: Scaling Guitar Strings EE C245 ME C218 ntroduction to MEMS Design Fall 21 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley

More information

EE C245 ME C218 Introduction to MEMS Design

EE C245 ME C218 Introduction to MEMS Design EE C245 ME C218 Introduction to MEMS Design Fall 2008 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture 2: Benefits

More information

Micromechanical filters for miniaturized low-power communications

Micromechanical filters for miniaturized low-power communications C. T.-C. Nguyen, Micromechanical filters for miniaturized low-power communications (invited), to be published in Proceedings of SPIE: Smart Structures and Materials (Smart Electronics and MEMS), Newport

More information

Vibrating MEMS resonators

Vibrating MEMS resonators Vibrating MEMS resonators Vibrating resonators can be scaled down to micrometer lengths Analogy with IC-technology Reduced dimensions give mass reduction and increased spring constant increased resonance

More information

Vibrating RF MEMS Overview: Applications to Wireless Communications

Vibrating RF MEMS Overview: Applications to Wireless Communications C. T.-C. Nguyen, Vibrating RF MEMS overview: applications to wireless communications, Proceedings of SPIE: Micromachining and Microfabrication Process Technology, vol. 5715, Photonics West: MOEMS-MEMS

More information

Location-Dependent Frequency Tuning of Vibrating Micromechanical Resonators Via Laser Trimming

Location-Dependent Frequency Tuning of Vibrating Micromechanical Resonators Via Laser Trimming Location-Dependent Frequency Tuning of Vibrating Micromechanical Resonators Via Laser Trimming Mohamed A. Abdelmoneum, Mustafa U. Demirci, Yu-Wei Lin, and Clark T.-C Nguyen Center for Wireless Integrated

More information

INF 5490 RF MEMS. LN10: Micromechanical filters. Spring 2011, Oddvar Søråsen Jan Erik Ramstad Department of Informatics, UoO

INF 5490 RF MEMS. LN10: Micromechanical filters. Spring 2011, Oddvar Søråsen Jan Erik Ramstad Department of Informatics, UoO INF 5490 RF MEMS LN10: Micromechanical filters Spring 2011, Oddvar Søråsen Jan Erik Ramstad Department of Informatics, UoO 1 Today s lecture Properties of mechanical filters Visualization and working principle

More information

MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION

MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION R. L. Kubena, F. P. Stratton, D. T. Chang, R. J. Joyce, and T. Y. Hsu Sensors and Materials Laboratory, HRL Laboratories, LLC Malibu, CA

More information

INF 5490 RF MEMS. L12: Micromechanical filters. S2008, Oddvar Søråsen Department of Informatics, UoO

INF 5490 RF MEMS. L12: Micromechanical filters. S2008, Oddvar Søråsen Department of Informatics, UoO INF 5490 RF MEMS L12: Micromechanical filters S2008, Oddvar Søråsen Department of Informatics, UoO 1 Today s lecture Properties of mechanical filters Visualization and working principle Design, modeling

More information

INF 5490 RF MEMS. LN10: Micromechanical filters. Spring 2012, Oddvar Søråsen Department of Informatics, UoO

INF 5490 RF MEMS. LN10: Micromechanical filters. Spring 2012, Oddvar Søråsen Department of Informatics, UoO INF 5490 RF MEMS LN10: Micromechanical filters Spring 2012, Oddvar Søråsen Department of Informatics, UoO 1 Today s lecture Properties of mechanical filters Visualization and working principle Modeling

More information

Switch-less Dual-frequency Reconfigurable CMOS Oscillator using One Single Piezoelectric AlN MEMS Resonator with Co-existing S0 and S1 Lamb-wave Modes

Switch-less Dual-frequency Reconfigurable CMOS Oscillator using One Single Piezoelectric AlN MEMS Resonator with Co-existing S0 and S1 Lamb-wave Modes From the SelectedWorks of Chengjie Zuo January, 11 Switch-less Dual-frequency Reconfigurable CMOS Oscillator using One Single Piezoelectric AlN MEMS Resonator with Co-existing S and S1 Lamb-wave Modes

More information

Frequency-Selective MEMS for Miniaturized Communication Devices

Frequency-Selective MEMS for Miniaturized Communication Devices C. T.-C. Nguyen, Frequency-selective MEMS for miniaturized communication devices (invited), Proceedings, 1998 IEEE Aerospace Conference, vol. 1, Snowmass, Colorado, March 21-28, 1998, pp. 445-460. Frequency-Selective

More information

Low voltage LNA, mixer and VCO 1GHz

Low voltage LNA, mixer and VCO 1GHz DESCRIPTION The is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a

More information

A Real-Time kHz Clock Oscillator Using a mm 2 Micromechanical Resonator Frequency-Setting Element

A Real-Time kHz Clock Oscillator Using a mm 2 Micromechanical Resonator Frequency-Setting Element 0.0154-mm 2 Micromechanical Resonator Frequency-Setting Element, Proceedings, IEEE International Frequency Control Symposium, Baltimore, Maryland, May 2012, to be published A Real-Time 32.768-kHz Clock

More information

MEMS Reference Oscillators. EECS 242B Fall 2014 Prof. Ali M. Niknejad

MEMS Reference Oscillators. EECS 242B Fall 2014 Prof. Ali M. Niknejad MEMS Reference Oscillators EECS 242B Fall 2014 Prof. Ali M. Niknejad Why replace XTAL Resonators? XTAL resonators have excellent performance in terms of quality factor (Q ~ 100,000), temperature stability

More information

1GHz low voltage LNA, mixer and VCO

1GHz low voltage LNA, mixer and VCO DESCRIPTION The is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a

More information

Energy Efficient Transmitters for Future Wireless Applications

Energy Efficient Transmitters for Future Wireless Applications Energy Efficient Transmitters for Future Wireless Applications Christian Fager christian.fager@chalmers.se C E N T R E Microwave Electronics Laboratory Department of Microtechnology and Nanoscience Chalmers

More information

SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver

SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver Arvin R. Shahani, Derek K. Shaeffer, Thomas H. Lee Stanford University, Stanford, CA At submicron channel lengths, CMOS is

More information

Low-Power Ovenization of Fused Silica Resonators for Temperature-Stable Oscillators

Low-Power Ovenization of Fused Silica Resonators for Temperature-Stable Oscillators Low-Power Ovenization of Fused Silica Resonators for Temperature-Stable Oscillators Zhengzheng Wu zzwu@umich.edu Adam Peczalski peczalsk@umich.edu Mina Rais-Zadeh minar@umich.edu Abstract In this paper,

More information

Surface Micromachining

Surface Micromachining Surface Micromachining An IC-Compatible Sensor Technology Bernhard E. Boser Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley Sensor

More information

Micro Electro Mechanical Systems Programs at MTO. Clark T.-C. Nguyen Program Manager, DARPA/MTO

Micro Electro Mechanical Systems Programs at MTO. Clark T.-C. Nguyen Program Manager, DARPA/MTO Micro Electro Mechanical Systems Programs at MTO Clark T.-C. Nguyen Program Manager, DARPA/MTO Microsystems Technology Office Technology for Chip-Level Integration of E. P. M. MEMS Application Domains

More information

techniques, and gold metalization in the fabrication of this device.

techniques, and gold metalization in the fabrication of this device. Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:

More information

Integration of AlN Micromechanical Contour- Mode Technology Filters with Three-Finger Dual Beam AlN MEMS Switches

Integration of AlN Micromechanical Contour- Mode Technology Filters with Three-Finger Dual Beam AlN MEMS Switches University of Pennsylvania From the SelectedWorks of Nipun Sinha 29 Integration of AlN Micromechanical Contour- Mode Technology Filters with Three-Finger Dual Beam AlN MEMS Switches Nipun Sinha, University

More information

Integrated Microwave Assemblies

Integrated Microwave Assemblies Integrated Microwave Assemblies Integrated Microwave Assembly (IMA) Custom Solutions For more information please call us at 888.553.7531 API Technologies, a world class leader in component design and system

More information

SA620 Low voltage LNA, mixer and VCO 1GHz

SA620 Low voltage LNA, mixer and VCO 1GHz INTEGRATED CIRCUITS Low voltage LNA, mixer and VCO 1GHz Supersedes data of 1993 Dec 15 2004 Dec 14 DESCRIPTION The is a combined RF amplifier, VCO with tracking bandpass filter and mixer designed for high-performance

More information

A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation

A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation Francesco Carrara 1, Calogero D. Presti 2,1, Fausto Pappalardo 1, and Giuseppe

More information

MEMS Real-Time Clocks: small footprint timekeeping. Paolo Frigerio November 15 th, 2018

MEMS Real-Time Clocks: small footprint timekeeping. Paolo Frigerio November 15 th, 2018 : small footprint timekeeping Paolo Frigerio paolo.frigerio@polimi.it November 15 th, 2018 Who? 2 Paolo Frigerio paolo.frigerio@polimi.it BSc & MSc in Electronics Engineering PhD with Prof. Langfelder

More information

High-Q UHF Micromechanical Radial-Contour Mode Disk Resonators

High-Q UHF Micromechanical Radial-Contour Mode Disk Resonators 1298 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 14, NO. 6, DECEMBER 2005 High-Q UHF Micromechanical Radial-Contour Mode Disk Resonators John R. Clark, Member, IEEE, Wan-Thai Hsu, Member, IEEE, Mohamed

More information

INF 5490 RF MEMS. LN12: RF MEMS inductors. Spring 2011, Oddvar Søråsen Department of informatics, UoO

INF 5490 RF MEMS. LN12: RF MEMS inductors. Spring 2011, Oddvar Søråsen Department of informatics, UoO INF 5490 RF MEMS LN12: RF MEMS inductors Spring 2011, Oddvar Søråsen Department of informatics, UoO 1 Today s lecture What is an inductor? MEMS -implemented inductors Modeling Different types of RF MEMS

More information

77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet

77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet 77 GHz VCO for Car Radar Systems Preliminary Data Sheet Operating Frequency: 76-77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive

More information

MEMS in ECE at CMU. Gary K. Fedder

MEMS in ECE at CMU. Gary K. Fedder MEMS in ECE at CMU Gary K. Fedder Department of Electrical and Computer Engineering and The Robotics Institute Carnegie Mellon University Pittsburgh, PA 15213-3890 fedder@ece.cmu.edu http://www.ece.cmu.edu/~mems

More information

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400

Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz

More information

RF Integrated Circuits

RF Integrated Circuits Introduction and Motivation RF Integrated Circuits The recent explosion in the radio frequency (RF) and wireless market has caught the semiconductor industry by surprise. The increasing demand for affordable

More information

Radio-Frequency Conversion and Synthesis (for a 115mW GPS Receiver)

Radio-Frequency Conversion and Synthesis (for a 115mW GPS Receiver) Radio-Frequency Conversion and Synthesis (for a 115mW GPS Receiver) Arvin Shahani Stanford University Overview GPS Overview Frequency Conversion Frequency Synthesis Conclusion GPS Overview: Signal Structure

More information

Power Reduction in RF

Power Reduction in RF Power Reduction in RF SoC Architecture using MEMS Eric Mercier 1 RF domain overview Technologies Piezoelectric materials Acoustic systems Ferroelectric materials Meta materials Magnetic materials RF MEMS

More information

Session 3. CMOS RF IC Design Principles

Session 3. CMOS RF IC Design Principles Session 3 CMOS RF IC Design Principles Session Delivered by: D. Varun 1 Session Topics Standards RF wireless communications Multi standard RF transceivers RF front end architectures Frequency down conversion

More information

433MHz front-end with the SA601 or SA620

433MHz front-end with the SA601 or SA620 433MHz front-end with the SA60 or SA620 AN9502 Author: Rob Bouwer ABSTRACT Although designed for GHz, the SA60 and SA620 can also be used in the 433MHz ISM band. The SA60 performs amplification of the

More information

Cascaded Channel-Select Filter Array Architecture Using High-K Transducers for Spectrum Analysis

Cascaded Channel-Select Filter Array Architecture Using High-K Transducers for Spectrum Analysis Cascaded Channel-Select Filter Array Architecture Using High-K Transducers for Spectrum Analysis Eugene Hwang, Tanay A. Gosavi, Sunil A. Bhave School of Electrical and Computer Engineering Cornell University

More information

Quiz2: Mixer and VCO Design

Quiz2: Mixer and VCO Design Quiz2: Mixer and VCO Design Fei Sun and Hao Zhong 1 Question1 - Mixer Design 1.1 Design Criteria According to the specifications described in the problem, we can get the design criteria for mixer design:

More information

Micro-nanosystems for electrical metrology and precision instrumentation

Micro-nanosystems for electrical metrology and precision instrumentation Micro-nanosystems for electrical metrology and precision instrumentation A. Bounouh 1, F. Blard 1,2, H. Camon 2, D. Bélières 1, F. Ziadé 1 1 LNE 29 avenue Roger Hennequin, 78197 Trappes, France, alexandre.bounouh@lne.fr

More information

EE C247B ME C218. EE C245: Introduction to MEMS Design. Spring EE C247B/ME C218: Introduction to MEMS Lecture 3m: Benefits of Scaling II

EE C247B ME C218. EE C245: Introduction to MEMS Design. Spring EE C247B/ME C218: Introduction to MEMS Lecture 3m: Benefits of Scaling II EE C247B/ME C218: ntroduction to MEMS Basic Concept: Scaling Guitar Strings Guitar String Vib. Amplitude EE C247B ME C218 ntroduction to MEMS Design Spring 2015 Prof. Clark T.- Freq. [Bannon 1996] Freq.

More information

ISSCC 2006 / SESSION 20 / WLAN/WPAN / 20.5

ISSCC 2006 / SESSION 20 / WLAN/WPAN / 20.5 20.5 An Ultra-Low Power 2.4GHz RF Transceiver for Wireless Sensor Networks in 0.13µm CMOS with 400mV Supply and an Integrated Passive RX Front-End Ben W. Cook, Axel D. Berny, Alyosha Molnar, Steven Lanzisera,

More information

CMY210. Demonstration Board Documentation / Applications Note (V1.0) Ultra linear General purpose up/down mixer 1. DESCRIPTION

CMY210. Demonstration Board Documentation / Applications Note (V1.0) Ultra linear General purpose up/down mixer 1. DESCRIPTION Demonstration Board Documentation / (V1.0) Ultra linear General purpose up/down mixer Features: Very High Input IP3 of 24 dbm typical Very Low LO Power demand of 0 dbm typical; Wide input range Wide LO

More information

Third Order Intermodulation Distortion in Capacitive-Gap Transduced Micromechanical Filters

Third Order Intermodulation Distortion in Capacitive-Gap Transduced Micromechanical Filters Third Order Intermodulation Distortion in Capacitive-Gap Transduced Micromechanical Filters Jalal Naghsh Nilchi, Ruonan Liu, Scott Li, Mehmet Akgul, Tristan O. Rocheleau, and Clark T.-C. Nguyen Berkeley

More information

MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION

MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION MEMS BASED QUARTZ OSCILLATORS and FILTERS for on-chip INTEGRATION R. L. Kubena, F. P. Stratton, D. T. Chang, R. J. Joyce, and T. Y. Hsu Sensors and Materials Laboratory, HRL Laboratories, LLC Malibu, CA

More information

Electrically coupled MEMS bandpass filters Part I: With coupling element

Electrically coupled MEMS bandpass filters Part I: With coupling element Sensors and Actuators A 122 (2005) 307 316 Electrically coupled MEMS bandpass filters Part I: With coupling element Siavash Pourkamali, Farrokh Ayazi School of Electrical and Computer Engineering, Georgia

More information

PAR4CR: THE DEVELOPMENT OF A NEW SDR-BASED PLATFORM TOWARDS COGNITIVE RADIO

PAR4CR: THE DEVELOPMENT OF A NEW SDR-BASED PLATFORM TOWARDS COGNITIVE RADIO PAR4CR: THE DEVELOPMENT OF A NEW SDR-BASED PLATFORM TOWARDS COGNITIVE RADIO Olga Zlydareva Co-authors: Martha Suarez Rob Mestrom Fabian Riviere Outline 1 Introduction System Requirements Methodology System

More information

6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators

6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators 6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators Massachusetts Institute of Technology March 29, 2005 Copyright 2005 by Michael H. Perrott VCO Design for Narrowband

More information

DESIGN OF ZIGBEE RF FRONT END IC IN 2.4 GHz ISM BAND

DESIGN OF ZIGBEE RF FRONT END IC IN 2.4 GHz ISM BAND DESIGN OF ZIGBEE RF FRONT END IC IN 2.4 GHz ISM BAND SUCHITAV KHADANGA RFIC TECHNOLOGIES, BANGALORE, INDIA http://www.rficdesign.com Team-RV COLLEGE Ashray V K D V Raghu Sanjith P Hemagiri Rahul Verma

More information

Study of MEMS Devices for Space Applications ~Study Status and Subject of RF-MEMS~

Study of MEMS Devices for Space Applications ~Study Status and Subject of RF-MEMS~ Study of MEMS Devices for Space Applications ~Study Status and Subject of RF-MEMS~ The 26 th Microelectronics Workshop October, 2013 Maya Kato Electronic Devices and Materials Group Japan Aerospace Exploration

More information

Research and Development Activities in RF and Analog IC Design. RFIC Building Blocks. Single-Chip Transceiver Systems (I) Howard Luong

Research and Development Activities in RF and Analog IC Design. RFIC Building Blocks. Single-Chip Transceiver Systems (I) Howard Luong Research and Development Activities in RF and Analog IC Design Howard Luong Analog Research Laboratory Department of Electrical and Electronic Engineering Hong Kong University of Science and Technology

More information

VHF and UHF Filters for Wireless Communications Based on Piezoelectrically-Transduced Micromechanical Resonators

VHF and UHF Filters for Wireless Communications Based on Piezoelectrically-Transduced Micromechanical Resonators VHF and UHF Filters for Wireless Communications Based on Piezoelectrically-Transduced Micromechanical Resonators Jing Wang Center for Wireless and Microwave Information Systems Nanotechnology Research

More information

A 2.6GHz/5.2GHz CMOS Voltage-Controlled Oscillator*

A 2.6GHz/5.2GHz CMOS Voltage-Controlled Oscillator* WP 23.6 A 2.6GHz/5.2GHz CMOS Voltage-Controlled Oscillator* Christopher Lam, Behzad Razavi University of California, Los Angeles, CA New wireless local area network (WLAN) standards have recently emerged

More information

Overview: Trends and Implementation Challenges for Multi-Band/Wideband Communication

Overview: Trends and Implementation Challenges for Multi-Band/Wideband Communication Overview: Trends and Implementation Challenges for Multi-Band/Wideband Communication Mona Mostafa Hella Assistant Professor, ESCE Department Rensselaer Polytechnic Institute What is RFIC? Any integrated

More information

Single chip 433MHz RF Transceiver

Single chip 433MHz RF Transceiver Single chip 433MHz RF Transceiver RF0433 FEATURES True single chip FSK transceiver On chip UHF synthesiser, 4MHz crystal reference 433MHz ISM band operation Few external components required Up to 10mW

More information

IN-CHIP DEVICE-LAYER THERMAL ISOLATION OF MEMS RESONATOR FOR LOWER POWER BUDGET

IN-CHIP DEVICE-LAYER THERMAL ISOLATION OF MEMS RESONATOR FOR LOWER POWER BUDGET Proceedings of IMECE006 006 ASME International Mechanical Engineering Congress and Exposition November 5-10, 006, Chicago, Illinois, USA IMECE006-15176 IN-CHIP DEVICE-LAYER THERMAL ISOLATION OF MEMS RESONATOR

More information

Receiver Architecture

Receiver Architecture Receiver Architecture Receiver basics Channel selection why not at RF? BPF first or LNA first? Direct digitization of RF signal Receiver architectures Sub-sampling receiver noise problem Heterodyne receiver

More information

RF MEMS Circuits Applications of MEMS switch and tunable capacitor

RF MEMS Circuits Applications of MEMS switch and tunable capacitor RF MEMS Circuits Applications of MEMS switch and tunable capacitor Dr. Jeffrey DeNatale, Manager, MEMS Department Electronics Division jdenatale@rwsc.com 85-373-4439 Panamerican Advanced Studies Institute

More information

Hot Topics and Cool Ideas in Scaled CMOS Analog Design

Hot Topics and Cool Ideas in Scaled CMOS Analog Design Engineering Insights 2006 Hot Topics and Cool Ideas in Scaled CMOS Analog Design C. Patrick Yue ECE, UCSB October 27, 2006 Slide 1 Our Research Focus High-speed analog and RF circuits Device modeling,

More information

Reconfigurable 4-Frequency CMOS Oscillator Based on AlN Contour-Mode MEMS Resonators

Reconfigurable 4-Frequency CMOS Oscillator Based on AlN Contour-Mode MEMS Resonators From the SelectedWorks of Chengjie Zuo October, 2010 Reconfigurable 4-Frequency CMOS Oscillator Based on AlN Contour-Mode MEMS Resonators Matteo Rinaldi, University of Pennsylvania Chengjie Zuo, University

More information

EVALUATION KIT AVAILABLE 10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs. Typical Operating Circuit. 10nH 1000pF MAX2620 BIAS SUPPLY

EVALUATION KIT AVAILABLE 10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs. Typical Operating Circuit. 10nH 1000pF MAX2620 BIAS SUPPLY 19-1248; Rev 1; 5/98 EVALUATION KIT AVAILABLE 10MHz to 1050MHz Integrated General Description The combines a low-noise oscillator with two output buffers in a low-cost, plastic surface-mount, ultra-small

More information

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology

Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Renbin Dai, and Rana Arslan Ali Khan Abstract The design of Class A and Class AB 2-stage X band Power Amplifier is described in

More information

UNIT-I CIRCUIT CONFIGURATION FOR LINEAR

UNIT-I CIRCUIT CONFIGURATION FOR LINEAR UNIT-I CIRCUIT CONFIGURATION FOR LINEAR ICs 2 marks questions 1.Mention the advantages of integrated circuits. *Miniaturisation and hence increased equipment density. *Cost reduction due to batch processing.

More information

Low Power RF Transceivers

Low Power RF Transceivers Low Power RF Transceivers Mr. Zohaib Latif 1, Dr. Amir Masood Khalid 2, Mr. Uzair Saeed 3 1,3 Faculty of Computing and Engineering, Riphah International University Faisalabad, Pakistan 2 Department of

More information

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data

More information

Designing a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004

Designing a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004 Designing a 960 MHz CMOS LNA and Mixer using ADS EE 5390 RFIC Design Michelle Montoya Alfredo Perez April 15, 2004 The University of Texas at El Paso Dr Tim S. Yao ABSTRACT Two circuits satisfying the

More information

Design of Clamped-Clamped Beam Resonator in Thick-Film Epitaxial Polysilicon Technology

Design of Clamped-Clamped Beam Resonator in Thick-Film Epitaxial Polysilicon Technology Design of Clamped-Clamped Beam Resonator in Thick-Film Epitaxial Polysilicon Technology D. Galayko, A. Kaiser, B. Legrand, L. Buchaillot, D. Collard, C. Combi IEMN-ISEN UMR CNRS 8520 Lille, France ST MICROELECTRONICS

More information

Catalog Continuing Education Courses

Catalog Continuing Education Courses Catalog Continuing Education Courses NanoMEMS Research, LLC P.O. Box 18614 Irvine, CA 92623-8614 Tel.: (949)682-7702 URL: www.nanomems-research.com E-mail: info@nanomems-research.com 2011 NanoMEMS Research,

More information

High-Linearity CMOS. RF Front-End Circuits

High-Linearity CMOS. RF Front-End Circuits High-Linearity CMOS RF Front-End Circuits Yongwang Ding Ramesh Harjani iigh-linearity CMOS tf Front-End Circuits - Springer Library of Congress Cataloging-in-Publication Data A C.I.P. Catalogue record

More information

Full Duplex CMOS Transceiver with On-Chip Self-Interference Cancelation. Seyyed Amir Ayati

Full Duplex CMOS Transceiver with On-Chip Self-Interference Cancelation. Seyyed Amir Ayati Full Duplex CMOS Transceiver with On-Chip Self-Interference Cancelation by Seyyed Amir Ayati A Dissertation Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy Approved

More information

Characteristics of Crystal. Piezoelectric effect of Quartz Crystal

Characteristics of Crystal. Piezoelectric effect of Quartz Crystal Characteristics of Crystal Piezoelectric effect of Quartz Crystal The quartz crystal has a character when the pressure is applied to the direction of the crystal axis, the electric change generates on

More information

Conference Paper Cantilever Beam Metal-Contact MEMS Switch

Conference Paper Cantilever Beam Metal-Contact MEMS Switch Conference Papers in Engineering Volume 2013, Article ID 265709, 4 pages http://dx.doi.org/10.1155/2013/265709 Conference Paper Cantilever Beam Metal-Contact MEMS Switch Adel Saad Emhemmed and Abdulmagid

More information

PROBLEM SET #7. EEC247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2015 C. Nguyen. Issued: Monday, April 27, 2015

PROBLEM SET #7. EEC247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2015 C. Nguyen. Issued: Monday, April 27, 2015 Issued: Monday, April 27, 2015 PROBLEM SET #7 Due (at 9 a.m.): Friday, May 8, 2015, in the EE C247B HW box near 125 Cory. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely

More information

mm-wave Transceiver Challenges for the 5G and 60GHz Standards Prof. Emanuel Cohen Technion

mm-wave Transceiver Challenges for the 5G and 60GHz Standards Prof. Emanuel Cohen Technion mm-wave Transceiver Challenges for the 5G and 60GHz Standards Prof. Emanuel Cohen Technion November 11, 11, 2015 2015 1 mm-wave advantage Why is mm-wave interesting now? Available Spectrum 7 GHz of virtually

More information

RF/Microwave Circuits I. Introduction Fall 2003

RF/Microwave Circuits I. Introduction Fall 2003 Introduction Fall 03 Outline Trends for Microwave Designers The Role of Passive Circuits in RF/Microwave Design Examples of Some Passive Circuits Software Laboratory Assignments Grading Trends for Microwave

More information

ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications. Nick Krajewski CMPE /16/2005

ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications. Nick Krajewski CMPE /16/2005 ITRS: RF and Analog/Mixed- Signal Technologies for Wireless Communications Nick Krajewski CMPE 640 11/16/2005 Introduction 4 Working Groups within Wireless Analog and Mixed Signal (0.8 10 GHz) (Covered

More information

Signal Integrity Design of TSV-Based 3D IC

Signal Integrity Design of TSV-Based 3D IC Signal Integrity Design of TSV-Based 3D IC October 24, 21 Joungho Kim at KAIST joungho@ee.kaist.ac.kr http://tera.kaist.ac.kr 1 Contents 1) Driving Forces of TSV based 3D IC 2) Signal Integrity Issues

More information

Design and optimization of a 2.4 GHz RF front-end with an on-chip balun

Design and optimization of a 2.4 GHz RF front-end with an on-chip balun Vol. 32, No. 9 Journal of Semiconductors September 2011 Design and optimization of a 2.4 GHz RF front-end with an on-chip balun Xu Hua( 徐化 ) 1;, Wang Lei( 王磊 ) 2, Shi Yin( 石寅 ) 1, and Dai Fa Foster( 代伐

More information

Chapter 2. The Fundamentals of Electronics: A Review

Chapter 2. The Fundamentals of Electronics: A Review Chapter 2 The Fundamentals of Electronics: A Review Topics Covered 2-1: Gain, Attenuation, and Decibels 2-2: Tuned Circuits 2-3: Filters 2-4: Fourier Theory 2-1: Gain, Attenuation, and Decibels Most circuits

More information

W-CDMA Upconverter and PA Driver with Power Control

W-CDMA Upconverter and PA Driver with Power Control 19-2108; Rev 1; 8/03 EVALUATION KIT AVAILABLE W-CDMA Upconverter and PA Driver General Description The upconverter and PA driver IC is designed for emerging ARIB (Japan) and ETSI-UMTS (Europe) W-CDMA applications.

More information

ESD Sensitive Component!!

ESD Sensitive Component!! 5 MHz LOW NOISE AMPLIFIER WHM3AE 1 REV E WHM3AE LNA is a low noise figure, wideband, and high linear SMT packaged amplifier with exceptional gain flatness design. The amplifier offers typical.7 db noise

More information