Vibrating RF MEMS for Low Power Wireless Communications
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1 Vibrating RF MEMS for Low Power Wireless Communications Clark T.-C. Nguyen Center for Wireless Integrated Microsystems Dept. of Electrical Engineering and Computer Science University of Michigan Ann Arbor, Michigan
2 Outline Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions
3 Frequency Division Multiplexed Communications Information is transmitted in specific frequency channels within specific bands Transmitted Power Band GSM Band Adj. Band DCS1800 Band Frequency
4 Frequency Division Multiplexed Communications Information is transmitted in specific frequency channels within specific bands Transmitted Power Band Filter GSM Band Adj. Band DCS1800 Band Frequency
5 Frequency Division Multiplexed Communications Information is transmitted in specific frequency channels within specific bands Transmitted Power Band Filter GSM Band Adj. Band DCS1800 Band Need: high frequency selectivity need high-q Frequency
6 Need for High-Q: Selective Low-Loss Filters In resonator-based filters: high tank Q low insertion loss At right: a 0.3% bandwidth 70 MHz (simulated) heavy insertion loss for resonator Q < 5,000
7 Need for High-Q: Oscillator Stability Main Function: provide a stable output frequency Difficulty: superposed noise degrades frequency stability Sustaining Amplifier A v o Ideal Sinusoid: v ( ) = Vosin 2πf t o t o Frequency-Selective Tank i v o i Higher Higher Q T O Real Sinusoid: v ( ) = Vo+ ε ( t) sin ( ) 2πf t + θ t o t ω ο =2π/T O o Tighter Tighter Spectrum Spectrum ω ω ο ω Zero-Crossing Point ω ο ω
8 Received Power Pre-Select Filter An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF ω IF ω LO ω RF Frequency
9 Received Power Pre-Select Filter An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF ω IF ω LO ω RF Frequency
10 Received Power Pre-Select Filter Interfering Signal An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power IF Filter ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF Ideal Local Oscillator ω IF ω IF ω LO ω RF Frequency
11 Received Power Pre-Select Filter Interfering Signal An Ideal Receiver Desired Signal MEMS for Wireless Communications IF Power IF Filter ω IF ω LO ω RF Frequency Mixer Local Osc Power ω IF Ideal Local Oscillator ω IF ω IF ω LO ω RF Frequency
12 Received Power MEMS for Wireless Communications Impact of Phase Noise on Receivers Pre-Select Filter Interfering Signal Desired Signal Interference From Tail of Phase Noise Spectrum IF Filter IF Power Local Osc Power ω IF ω LO ω IF ω RF Frequency Local Oscillator With Phase Noise Mixer ω IF Signal Not Recoverable ω IF ω LO ω RF Frequency
13 Attaining High-Q Problem: IC s cannot achieve Q s in the thousands transistors consume too much power to get Q on-chip spiral inductors Q s no higher than ~10 off-chip inductors Q s in the range of 100 s Observation: vibrating mechanical resonances Q > 1,000 Example: quartz crystal resonators (e.g., in wristwatches) extremely high Q s ~ 10,000 or higher (Q ~ 10 6 possible) mechanically vibrates at a distinct frequency in a thickness-shear mode
14 Miniaturization of Transceivers High-Q functionality required by oscillators and filters cannot be realized using standard IC components use off-chip mechanical components SAW, ceramic, and crystal resonators pose bottlenecks against ultimate miniaturization
15 So Many Passive Components! The total area on a printed circuit board for a wireless phone is often dominated by passive components passives pose a bottleneck on the ultimate miniaturization of transceivers Transistor Transistor Chips Chips Quartz Quartz Crystal Crystal Inductors Inductors Capacitors Capacitors Resistors Resistors IF IF Filter Filter (SAW) (SAW) RF RF Filter Filter (ceramic) (ceramic) IF IF Filter Filter (SAW) (SAW)
16 Surface Micromachining Fabrication steps compatible with planar IC processing
17 Post-CMOS Circuits+μMechanics Integration Completely monolithic, low phase noise, high-q oscillator (effectively, an integrated crystal oscillator) [Nguyen, Howe] Oscilloscope Output Waveform To allow the use of >600 o C processing temperatures, tungsten (instead of aluminum) is used for metallization
18 Target Application: Integrated Transceivers Off-chip high-q mechanical components present bottlenecks to miniaturization replace them with μmechanical versions
19 Outline Κ Κ Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions
20 Vertically-Driven Micromechanical Resonator To date, most used design to achieve VHF frequencies Smaller mass higher frequency range and lower series C. RT.-C. x Nguyen
21 Fabricated HF μmechanical Resonator Surface-micromachined, POCl 3 -doped polycrystalline silicon Extracted Q = 8,000 (vacuum) Freq. influenced by dc-bias and anchor effects
22 Desired Filter Characteristics Small shape factor generally preferred
23 Micromechanical Circuits MEMS for Wireless Communications A single mechanical beam can t really do much on its own But use many mechanical beams attached together in a circuit, and attain a more complex, more useful function Input Force F i Output Displacement x o F i x o t Key Design Property: High Q t
24 Desired Filter Characteristics Small shape factor generally preferred
25 MEMS for Wireless Communications Micromechanical Filter Circuit
26 Ideal Spring-Coupled μmechanical Filter Symmetric Mode Anti-Symmetric Mode BW ~ k s12 k r c r 1 m r1 k s 12 m r2 c r 2 k r 1 k r 2
27 MEMS for Wireless Communications Micromechanical Filter Circuit
28 HF Spring-Coupled Micromechanical Filter
29 High-Order μmechanical Filter
30 Electromechanical Mixing MEMS for Wireless Communications ω o =ω IF Electrical Signal Input Filter Response ω IF ω LO ω RF ω Mechanical Signal Input ω IF ω LO ω RF ω
31 Micromechanical Mixer-Filter [Wong, Nguyen 1998]
32 Micromechanical Switch MEMS for Wireless Communications Operate the micromechanical beam in an up/down binary fashion [C. Goldsmith, 1995] Performance: I.L.~0.1dB, IIP3 ~ 66dBm (extremely linear) Issues: switching voltage ~ 20V, switching time: 1-5μs
33 Voltage-Tunable High-Q Capacitor Micromachined, movable, aluminum plate-to-plate capacitors Tuning range exceeding that of on-chip diode capacitors and on par with off-chip varactor diode capacitors Challenges: microphonics, tuning range truncated by pull-in
34 Suspended, Stacked Spiral Inductor Strategies for maximizing Q: 15μm-thick, electroplated Cu windings reduces series R suspended above the substrate reduces substrate loss
35 MEMS-Replaceable Transceiver Components [Yao 1997] [Bannon, Clark, Nguyen 1996] [Wang, Yu, Nguyen 1999] [J.-B. Yoon, et al. 1999] [Young, Boser 1996] A large number of off-chip high-q components replaceable with μmachined versions; e.g., using μmachined resonators, switches, capacitors, and inductors
36 Miniaturization of Transceivers via MEMS Off-chip high-q mechanical components present bottlenecks to miniaturization replace them with μmechanical versions
37 MEMS-Based Receiver Architecture Most Direct Approach: replace off-chip components (in orange) with μmechanical versions (in green) L 1 ~2dB 1 ~2dB L 3 ~6dB 3 ~6dB L 5 ~12dB 5 ~12dB NF NF = 8.8dB 8.8dB Higher Q L 1 ~0.3dB 1 ~0.3dB L 3 ~0.5dB 3 ~0.5dB L 5 ~1dB 5 ~1dB Replace with MEMS Antenna Antenna Diversity Diversity for for resilience resilience against against fading fading Obvious Benefit: substantial size reduction NF NF = 2.8dB 2.8dB
38 Outline Κ Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions
39 Received Power MEMS for Wireless Communications Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity case: wideband front-end filtering Desired Signal RF Pre-Select Filter (Res.Q ~500) Antenna Frequency
40 Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity Received Power case: wideband front-end filtering Desired Signal RF Pre-Select Filter (Res.Q ~500) Out-of-Band Interferers Removed Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Problem: helpful, but does not go far enough subsequent electronics must still have more dynamic range than really necessary power wasted
41 Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity Received Power better approach: narrowband front-end filtering Desired Signal RF Pre-Select Filter (Res.Q ~500) Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s)
42 Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity Received Power better approach: narrowband front-end filtering Desired Signal RF Channel-Select Filter (Q ~500) (Q ~10,000) Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s)
43 Received Power Desired Signal MEMS for Wireless Communications Power vs. Selectivity (or Q) Trade-Offs Example: power consumption as a function of front-end selectivity better approach: narrowband front-end filtering RF Channel-Select Filter (Q ~500) (Q ~10,000) All Interferers Removed Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Result: substantial power savings in subsequent circuits relaxed dynamic range requirements relaxed oscillator phase noise requirements
44 Received Power Front-End Channel Selector MEMS for Wireless Communications Power Saving Strategy: select channels right up at RF One Approach: Use a highly selective low-loss filter that is tunable from channel to channel: Filter On Filter On Filter On Filter On Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Problem: high filter selectivity (i.e., high Q) often precludes tunability
45 Voltage-Controllable Center Frequency
46 Received Power Front-End Channel Selector MEMS for Wireless Communications Solution: rather than cover the band by tuning, cover with a bank of switchable filters Filter On Filter On Filter On Filter On Antenna Frequency Subsequent Electronics (e.g., LNA, mixer, ADC s) Problem: macroscopic high-q filters are too big Requirement: tiny filters μmechanical high-q filters present a good solution
47 MEMS vs. SAW Comparison MEMS offers the same or better high-q frequency selectivity with orders of magnitude smaller size
48 Micromechanical RF Pre-Selector Use a massively parallel array of tunable, switchable filters tiny size and zero dc power consumption of μmechanical filters allows this
49 MEMS-Based Transceiver Architecture Use numerous filters in a switchable bank to allow front-end channel selection Allows more efficient PA and lower dynamic range LNA and mixer Micromechanics are shaded in green
50 MEMS-Based Transceiver Architecture When replace FET switch: I.L. goes from 2dB to 0.1dB Save 280mW when transmitting 500mW Micromechanics are shaded in green
51 MEMS-Based Transceiver Architecture Use transducer nonlinearity to obtain a mixer function, followed by a filter Eliminate active mixer power Micromechanics are shaded in green
52 MEMS-Based Transceiver Architecture Substantial power savings if resonator Q>1,000 Another example of Q versus power trade-off Micromechanics are shaded in green
53 MEMS-Based Transceiver Architecture Low Loss Eliminate the RF LNA? If possible, could substantially reduce RF front-end power Micromechanics are shaded in green
54 Outline Κ Miniaturization of Transceivers the need for high-q High-Q Micromechanical Resonators Micromechanical Circuits micromechanical filters micromechanical mixer-filters micromechanical switches micromechanical C s and L s Power Savings Via High-Q MEMS trade Q (or selectivity) for power MEMS-based xceiver architecture Research Challenges Conclusions
55 Research Issue: Frequency Extension To extend the frequency range shrink beam dimensions must shrink gap d dimensions, as well Possible Problem: Q reduction with frequency material and anchor loss mechanisms solution: defensive mechanical design, materials engineering
56 Anchor Dissipation in Fixed-Fixed Beams f o Q
57 92 MHz Free-Free Beam μresonator Free-free beam μmechanical resonator with non-intrusive supports reduce anchor dissipation higher Q
58 92 MHz Free-Free Beam μresonator Free-free beam μmechanical resonator with non-intrusive supports reduce anchor dissipation higher Q
59 Research Issue: Frequency Extension To extend the frequency range shrink beam dimensions must shrink gap d dimensions, as well Possible Problem: Q reduction with frequency material and anchor loss mechanisms solution: defensive mechanical design, materials engineering Possible Problem: size vs. power handling trade-offs may limit the degree of size reduction allowable solution: transducer design, other vibration modes
60 156 MHz Radial Contour-Mode Disk μmechanical Resonator Below: Balanced radial-mode disk polysilicon μmechanical resonator (34 μm diameter) μmechanical Disk Resonator Metal Electrode R Design/Performance: R=17μm, t=2μm d=1,000å, V P =35V f o =156.23MHz, Q=9,400 Metal Electrode Anchor f o =156MHz Q=9,400 [Clark, Hsu, Nguyen IEDM 00]
61 1000Å Lateral Electrode-to-Disk Gaps Achieved via a fabrication process that combines polysilicon surface micromachining, metal electroplating, and sidwall spacer technologies μmechanical Disk Resonator 1,000Å Metal Electrode 2 μm Metal Electrode [Clark, Hsu, Nguyen IEDM 00]
62 Other Research Issues:
63 μmechanical Filter Passband Correction [Wang, Nguyen, 1997] Problems: too many interconnect leads, Δf small at VHF Need: a permanent frequency trimming technique
64 Research Issue: Frequency Trimming For banks of filters or resonators need automated trimming on a massive scale, preferably voltage-activated Localized Annealing: current through structure heats it like a filament extremely fast thermal time constants allow for ultra-rapid annealing 16 ppm f o shift per anneal pulse [Wang, Wong, Hsu, Nguyen 1997]
65 Research Issue: Thermal Stability [Wang, Yu, Nguyen 2000] Need temperature compensation or control methods
66 Geometric-Stress Temperature Compensation Geometrically generate a stress vs. temperature function that compensates Young s modulus thermal variation L 1 L 2
67 Fabricated Temp.-Insensitive μresonator [Hsu, Clark, Nguyen IEDM 00] Design/Performance: L 1 =39μm, L 2 =39μm, d =1038Å W 1 =2.5μm, W 2 =20μm, t =2μm V P =16V, f o =13.49MHz, Q=10,317
68 Demonstration of Geometric-Stress Temperature Compensation Below: polysilicon structure, silicon substrate [Hsu, Clark, Nguyen 2000] Less than 200 ppm f o variation over 80 o C for L 2 /L 1 =60/40
69 Research Issue: Thermal Stability [Wang, Yu, Nguyen 2000] Need temperature compensation or control methods
70 Research Issue: Contamination Sensitivity Contamination fluctuations f o and Q fluctuations Typical μresonator mass: kg Larger frequency fluctuations for microsized resonators than for more massive quartz crystals Factors influencing contamination-derived instabilities contaminant molecule size and weight pressure and temperature Need encapsulation for contamination protection
71 Research Issue: Vacuum Encapsulation Below: localized heated bonding to seal a vacuum cap over a released micromechanical resonator Schematic of the Bonding Encapsulation Procedure Broken Glass Cap V anneal Glass Cap Microcavity Q µheater and Aluminum Solder weeks at 25 mtorr [Cheng, Hsu, Lin, Nguyen, Najafi 2000] Weeks
72 Conclusions Via enhanced selectivity on a massive scale, micromechanical circuits using high-q elements have the potential for shifting communication transceiver design paradigms, greatly enhancing their capabilities Advantages of Micromechanical Circuits: orders of magnitude smaller size than present mechanical resonator devices better performance than other single-chip solutions potentially large reduction in power consumption alternative transceiver architectures that maximize the use of high-q, frequency selective devices for improved performance but there s much more to it than just the above...
73 Conclusions Compelling parallels between MEMS and integrated transistor signal processor technologies: Before 1960: discrete transistor circuits wired on boards with limited functionality After IC s: VLSI CPU s and memory circuits have revolutionized the way things are done Today: discrete mechanical circuits coupled by welded wires with limited functionality With VLSI Micromechanical Signal Processors: functions never before possible now realizable via a combination of transistor and mechanical circuits? a functional and system architectural revolution reminiscent of the IC revolution? potential for true revolution? but there is much work yet to be done
74 Acknowledgments Numerous authors referenced throughout Former and present graduate students, especially Kun Wang, Frank Bannon III, and Ark-Chew Wong, who are largely responsible for the micromechanical filter work, and Wan-Thai Hsu and Mustafa Demirci, who are largely responsible for the resonator work My government funding sources: mainly DARPA and an NSF Engineering Research Center
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