P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R G escription This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency C-C converters that power the latest generation of microprocessors. The IRF7809V has been optimized for all parameters that are critical in synchronous buck converters including R S(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809V offers particulary low R S(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. S S S G 1 2 3 4 8 7 6 5 SO-8 Top View EVICE CHRCTERISTICS IRF7809V R S(on) 7.0mΩ Q G 41nC Q sw 14nC Q oss 30nC bsolute Maximum Ratings Parameter Symbol IRF7809 V Units rain-source Voltage V S 30 V Gate-Source Voltage V GS ±12 Continuous rain or Source T = 25 C I 13.3 Current (V GS 4.5V) T L = 90 C 14.6 Pulsed rain Current I M Power issipation T = 25 C P 2.5 W T L = 90 C 3.0 Junction & Storage Temperature Range T J, T STG 55 to 150 C Continuous Source Current (Body iode) I S 2.5 Pulsed Source Current I SM 50 Thermal Resistance Parameter Max. Units Maximum Junction-to-mbientƒ R θj 50 C/W Maximum Junction-to-Lead R θjl 20 C/W 8/23/05
IRF7809V Electrical Characteristics Parameter Min Typ Max Units Conditions rain-to-source BV SS 30 V V GS = 0V, I = 250µ Breakdown Voltage Static rain-source R S(on) 7.0 9.0 mω V GS = 4.5V, I = 15 on Resistance Gate Threshold Voltage V GS(th) 1.0 V V S = V GS,I = 250µ rain-source Leakage I SS 30 V S = 24V, V GS = 0 Current Current* 150 µ V S = 24V, V GS = 0, Tj = C Gate-Source Leakage I GSS ± n V GS = ±12V Current* Total Gate Chg Cont FET Q G 41 62 V GS =5V, I =15, V S =20V Total Gate Chg Sync FET Q G 36 54 V GS = 5V, V S < mv Pre-Vth Q GS1 7.0 V S = 20V, I = 15 Gate-Source Charge Post-Vth Q GS2 2.3 nc Gate-Source Charge Gate to rain Charge Q G 12 I =15, V S =16V Switch Chg(Q gs2 + Q gd ) Q sw 14 21 Output Charge* Q oss 30 45 V S = 16V, V GS = 0 Gate Resistance R G 1.5 3.0 Ω Turn-on elay Time t d (on) 14 V = 16V, I = 15 Rise Time t r 36 ns V GS = 5V Turn-off elay Time t d (off) 96 Clamped Inductive Load Fall Time t f Input Capacitance C iss 3780 Output Capacitance C oss 60 pf V S = 16V, V GS = 0 Reverse Transfer Capacitance C rss 130 Source-rain Rating & Characteristics Parameter Min Typ Max Units Conditions iode Forward V S 1.3 V I S = 15, V GS = 0V Voltage* Reverse Recovery Charge Q rr 120 nc di/dt ~ 700/µs V S = 16V, V GS = 0V, I S = 15 Reverse Recovery Q rr(s) 150 nc di/dt = 700/µs Charge (with Parallel (with BQ040) Schottky) V S = 16V, V GS = 0V, I S = 15 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. ƒ When mounted on 1 inch square copper board, t < sec. Typ = measured - Q oss Typical values measured at V GS = 4.5V, I F = 15. 2 www.irf.com
IRF7809V I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C 0.1 1 V S, rain-to-source Voltage (V) I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 150 C 0.1 1 V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 0 T J = 150 C T J = 25 C V S = 15V 20µs PULSE WITH 2.4 2.6 2.8 3.0 3.2 3.4 V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = 15 1.5 1.0 0.5 V GS = V 0.0-60 -40-20 0 20 40 60 80 120 140 160 T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
IRF7809V C, Capacitance (pf) 6000 5000 4000 3000 2000 0 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTE V GS, Gate-to-Source Voltage (V) 8 6 4 2 I = 15 V S = 20V C rss 0 1 V S, rain-to-source Voltage (V) 0 0 20 30 40 50 60 70 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 0 1 T J = 150 C T J = 25 C V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 V S,Source-to-rain Voltage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) us us 1ms T = 25 C ms TJ = 150 C Single Pulse 1 0.1 1 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
IRF7809V 16 V S R I, rain Current () 12 8 4 0 25 50 75 125 150 T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width 1 µs uty Factor 0.1 %.U.T. % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms + - V Thermal Response (Z thj ) 1 0.1 = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J= P M x Z thj + T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse uration (sec) PM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-mbient www.irf.com 5
R S (on), rain-to-source On Resistance (Ω) IRF7809V 0.008 R S(on), rain-to -Source On Resistance ( Ω) 0.012 V GS = 4.5V 0.007 0.0 0.006 V GS = V 0.008 I = 15 0.005 0 20 40 60 80 120 I, rain Current () 0.006 2.5 3.0 3.5 4.0 4.5 V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. rain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 12V I S V GS.2µF 50KΩ 3m.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 13a&b. Basic Gate Charge Test Circuit and Waveform tp V (BR)SS R G V S 20V V G tp Q GS L.U.T IS 0.01Ω Q G Q G Charge 15V RIVER + - V E S, Single Pulse valanche Energy (mj) 500 400 300 200 I TOP 6.7 9.5 BOTTOM 15 0 25 50 75 125 150 Starting T, Junction Temperature( J C) Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum valanche Energy and Waveforms Vs. rain Current 6 www.irf.com
IRF7809V SO-8 Package etails 5 8 7 6 5 6 E 1 2 3 4 6X e B H 0.25 [.0] IM INCHES MILLIMET ERS MIN MX MIN MX 1.0532.0040.0688.0098 1.35 0. 1.75 0.25 b.013.020 0.33 0.51 c.0075.0098 0.19 0.25 E e e1 H K L y.189.1968.1497.1574.050 BSIC 1.27 BSIC.025 BSIC 0.635 BSIC.2284.2440.0099.0196.016.050 0 8 4.80 5.00 3.80 4.00 5.80 6.20 0.25 0.50 0.40 1.27 0 8 e1 C y K x 45 SO-8 Part Marking 8X b 1 0.25 [.0] C B 0. [.004] NOT ES : 1. IMENSIONING & TOLERNCING PER SME Y14.5M-1994. 2. CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS -012. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.15 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. 8X L 8X c 7 6.46 [.255] 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] EXMPLE: THIS IS N IRF71 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F71 TE COE (YWW) P = ES IGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER www.irf.com 7
IRF7809V SO-8 Tape and Reel TERMINL NUMBER 1 12.3 (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-481 & EI-541. 330.00 (12.992) MX. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-481 & EI-541. 14.40 (.566 ) 12.40 (.488 ) IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information. 08/05 8 www.irf.com