STB45N65M5, STF45N65M5, STP45N65M5

Transcription

1 N-channel 650 V, Ω typ., 35 A MDmesh V Power MOSFET in D 2 PAK, TO-220FP and TO-220 packages Datasheet production data TAB Features D 2 PAK TAB TO-220FP Order codes V T Jmax R DS(on) max I D STB45N65M5 STF45N65M5 STP45N65M5 710 V Ω 35 A TO Worldwide best R DS(on) * area Higher V DSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1. Internal schematic diagram Applications Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB45N65M5 D 2 PAK Tape and reel STF45N65M5 STP45N65M5 45N65M5 TO-220FP TO-220 Tube March 2013 DocID Rev 4 1/20 This is information on a product in full production. 20

2 Contents STB45N65M5, STF45N65M5, STP45N65M5 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /20 DocID Rev 4

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D 2 PAK TO-220 TO-220FP Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 C (1) A I D Drain current (continuous) at T C = 100 C (1) A I DM (1) Drain current (pulsed) (1) A P TOT Total dissipation at T C = 25 C W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) 1. Limited by maximum junction temperature. 2. I SD 35 A, di/dt 400 A/µs, V DS(Peak) < V (BR)DSS, V DD = 400 V 3. V DS 480 V 2500 V T stg Storage temperature - 55 to 150 C T j Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value D 2 PAK TO-220FP TO-220 Unit R thj-case Thermal resistance junction-case max C/W R (1) thj-pcb Thermal resistance junction-pcb max 30 C/W R thj-amb Thermal resistance junction-ambient max 62.5 C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetetive or not repetetive (pulse width limited by T jmax ) Single pulse avalanche energy (starting t j =25 C, I d = I AR ; V dd =50) 9 A 810 mj DocID Rev 4 3/20

4 Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) I D = 1 ma, V GS = V V DS = 650 V V DS = 650 V, T C =125 C Gate-body leakage I GSS V current (V DS = 0) GS = ± 25 V ± 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V Static drain-source R DS(on) V on-resistance GS = 10 V, I D = 17.5 A Ω µa µa Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss (1) C o(tr) (2) C o(er) R G Q g Q gs Q gd Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge V DS = 100 V, f = 1 MHz, V GS = 0 V DS = 0 to 520 V, V GS = pf pf pf pf pf f = 1 MHz open drain Ω V DD = 520 V, I D = 17.5 A, V GS = 10 V (see Figure 18) nc nc nc 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS 4/20 DocID Rev 4

5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d (v) t r (v) t f (i) t c (off) Voltage delay time Voltage rise time Current fall time Crossing time V DD = 400 V, I D = 23 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19 and Figure 22) ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD = 35 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 35 A, di/dt = 100 A/µs V DD = 100 V (see Figure 19) I SD = 35 A, di/dt = 100 A/µs V DD = 100 V, T j = 150 C (see Figure 19) A A ns µc A ns µc A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID Rev 4 5/20

6 Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK and TO- 220 Figure 3. Thermal impedance for D²PAK and TO-220 ID (A) Operation in this area is Limited by max RDS(on) AM13077v1 Tj=150 C Tc=25 C Single pulse 10µs 100µs 1ms 10ms VDS(V) Figure 4. Safe operating area TO220FP Figure 5. Thermal impedance for TO-220FP ID (A) Operation in this area is Limited by max RDS(on) AM13078v1 Tj=150 C Tc=25 C Single pulse 10µs 100µs 1ms 10ms VDS(V) ID Figure 6. Output characteristics (A) 90 VGS=10V AM13080v V V VDS(V) ID Figure 7. Transfer characteristics (A) VDS=25V AM13081v VGS(V) 6/20 DocID Rev 4

7 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance VGS (V) 12 VDS VDD=520V ID=17.5A AM13082v1 VDS (V) 500 RDS(on) (Ω) VGS=10V AM13083v Qg(nC) Figure 10. Capacitance variations ID(A) Figure 11. Output capacitance stored energy C (pf) AM13084v1 Eoss (µj) 16 AM13085v Ciss Coss Crss VDS(V) Figure 12. Normalized gate threshold voltage vs. temperature VDS(V) Figure 13. Normalized on resistance vs. temperature VGS(th) (norm) 1.10 ID=250µA AM05459v2 RDS(on) (norm) VGS=10V ID=17.5V AM05460v TJ( C) TJ( C) DocID Rev 4 7/20

8 Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5 Figure 14. Drain-source diode forward characteristics VSD (V) TJ=150 C TJ=-50 C TJ=25 C ISD(A) AM05461v1 Figure 15. Normalized V DS vs. temperature AM10399v1 VDS (norm) 1.08 ID = 1mA TJ( C) Figure 16. Switching losses vs. gate resistance (1) E (μj) ID=23A VDD=400V VGS=10V Eon AM13086v1 400 Eoff RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/20 DocID Rev 4

9 Test circuits 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform V(BR)DSS Id Concept waveform for Inductive Load Turn-off VD 90%Vds 90%Id IDM Vgs Tdelay-off ID 90%Vgs on Vgs(I(t)) VDD VDD 10%Vds 10%Id Vds Trise Tfall AM01472v1 Tcross -over AM05540v2 DocID Rev 4 9/20

10 Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/20 DocID Rev 4

11 Package mechanical data Table 9. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID Rev 4 11/20

12 Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 23. D²PAK (TO-263) drawing _T Figure 24. D²PAK footprint (a) Footprint a. All dimensions are in millimeters 12/20 DocID Rev 4

13 Package mechanical data Table 10. TO-220FP mechanical data Dim. mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia DocID Rev 4 13/20

14 Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 25. TO-220FP drawing _Rev_K_B 14/20 DocID Rev 4

15 Package mechanical data Table 11. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q DocID Rev 4 15/20

16 Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 26. TO-220 type A drawing _typeA_Rev_S 16/20 DocID Rev 4

17 Packaging mechanical data 5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID Rev 4 17/20

18 Packaging mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 27. Tape for D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 REEL DIMENSIONS Figure 28. Reel for D²PAK (TO-263) T 40mm min. Access hole At sl ot location B D C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 18/20 DocID Rev 4

19 Revision history 6 Revision history Table 13. Document revision history Date Revision Changes 22-Feb First release. 28-Aug Dec Mar Document status promoted from preliminary data to production data. Inserted Section 2.1: Electrical characteristics (curves). The part number STW45N65M5 has been moved to a separate datasheet. Added dv/dt value on Table 2: Absolute maximum ratings Minor text changes DocID Rev 4 19/20

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