FCB070N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 44 A, 70 m

Transcription

1 Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 44 A, 70 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This advance technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for various AC/ DC power conversion for system miniaturization and higher efficiency. S R DS(ON) MAX I D MAX 650 V 70 0 V 44 A D Features 700 T J = 50 C R DS(on) = 62 m (Typ.) Ultra Low Gate Charge (Typ. Q g = 78 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 75 pf) % Avalanche Tested These Devices are Pb Free and are RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supplies UPS / Solar G S POWER MOSFET G S D D 2 PAK CASE 48AJ MARKING DIAGRAM $Y&Z&3&K FCB 070N65S3 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCB070N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 207 July, 208 Rev. 3 Publication Order Number: FCB070N65S3/D

2 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, Unless otherwise specified) Symbol Parameter Value Unit S Drain to Source Voltage 650 V S Gate to Source Voltage DC ±30 V AC (f > Hz) ±30 V I D Drain Current Continuous (T C = 25 C) 44 A Continuous (T C = C) 28 I DM Drain Current Pulsed (Note ) 0 A E AS Single Pulsed Avalanche Energy (Note 2) 24 mj I AS Avalanche Current (Note ) 4.8 A E AR Repetitive Avalanche Energy (Note ) 3.2 mj dv/dt MOSFET dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 P D Power Dissipation (T C = 25 C) 32 W Derate Above 25 C 2.5 W/ C T J, T STG Operating and Storage Temperature Range 55 to +50 C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 s 300 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 4.8 A, R G = 25, starting T J = 25 C. 3. I SD 44 A, di/dt 200 A/ s, V DD BS, starting T J = 25 C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R JC Thermal Resistance, Junction to Case, Max. 0.4 C/W Thermal Resistance, Junction to Ambient, Max. (Note 4) Device on in 2 pad 2 oz copper pad on.5 x.5 in. board of FR 4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping FCB070N65S3 FCB070N65S3 D 2 PAK 330 mm 24 mm 800 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. 2

3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BS Drain to Source Breakdown Voltage =0V, I D = ma, T J =25 C 650 V BS / T J Breakdown Voltage Temperature Coefficient =0V, I D = ma, T J = 50 C 700 V I D = ma, Referenced to 25 C 0.72 V/ C I DSS Zero Gate Voltage Drain Current = 650 V, =0V A = 520 V, =0V, T C = 25 C 2.2 I GSS Gate to Body Leakage Current = ±30 V, =0V ± na ON CHARACTERISTICS (th) Gate Threshold Voltage =, I D = 4.4 ma V R DS(on) Static Drain to Source On Resistance =0V, I D = 22 A m g FS Forward Transconductance =20V, I D =22A 29 S DYNAMIC CHARACTERISTICS C iss Input Capacitance = 400 V, = 0 V, f = MHz 3090 pf C oss Output Capacitance 68 pf C oss(eff.) Effective Output Capacitance = 0 V to 400 V, =0V 75 pf C oss(er.) Energy Related Output Capacitance = 0 V to 400 V, =0V 04 pf Q g(tot) Total Gate Charge at 0 V = 400 V, I D = 22 A, =0V 78 nc Q gs Gate to Source Gate Charge (Note 5) 8 nc Q gd Gate to Drain Miller Charge 30 nc ESR Equivalent Series Resistance f = MHz 0.6 SWITCHING CHARACTERISTICS t d(on) Turn-On Delay Time V DD = 400 V, I D =22A, 26 ns t r Turn-On Rise Time =0V, R g = 4.7 (Note 5) 52 ns t d(off) Turn-Off Delay Time 89 ns t f Turn-Off Fall Time 6 ns SOURCE-DRAIN DIODE CHARACTERISTICS I S Maximum Continuous Source to Drain Diode Forward Current 44 A I SM Maximum Pulsed Source to Drain Diode Forward Current 0 A V SD Source to Drain Diode Forward Voltage =0V, I SD =22A.2 V t rr Reverse Recovery Time =0V, I SD = 22 A, 435 ns Q rr Reverse Recovery Charge di F /dt = A/ s 9.2 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. 3

4 TYPICAL PERFORMANCE CHARACTERISTICS I D, Drain Current (A) 0 = 0.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V I D, Drain Current (A) 0 = 20 V 250 s Pulse Test 50 C 25 C 250 s Pulse Test T C = 25 C 55 C , Drain Source Voltage (V), Gate Source Voltage (V) Figure. On Region Characteristics Figure 2. Transfer Characteristics R DS(ON), Drain Source On Resistance ( ) 0.25 TC = 25 C = 0 V = 20 V I S, Reverse Drain Current (A) = 0 V 250 s Pulse Test 50 C 55 C 25 C I D, Drain Current (A) V SD, Body Diode Forward Voltage (V) Figure 3. On Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature I D = 22 A Capacitances (pf) 00 0 C iss C oss 0 = 0 V f = MHz 0. C iss = C gs + C gd (C ds = shorted) C rss C oss = C ds + C gd C rss = C gd , Drain Source Voltage (V), Gate Source Voltage (V) = 30 V = 400 V Q g, Total Gate Charge (nc) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 4

5 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) BS, Drain Source Breakdown Voltage (Normalized) = 0 V I D = ma R DS(on), Drain Source On Resistance (Normalized) = 0 V I D = 22 A T J, Junction Temperature ( C) T J, Junction Temperature ( C) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On Resistance Variation vs. Temperature I D, Drain Current (A) DC 0 ms 30 s s ms 20 Operation in this Area is Limited by R DS(on) T 0 C = 25 C T J = 50 C Single Pulse , Drain Source Voltage (V) Figure 9. Maximum Safe Operating Area I D, Drain Current (A) T C, Case Temperature ( C) Figure 0. Maximum Drain Current vs. Case Temperature 20 6 E OSS, ( J) , Drain to Source Voltage (V) Figure. E OSS vs. Drain to Source Voltage 5

6 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) r(t), Normalized Effective Transient Thermal Resistance DUTY CYCLE DESCENDING ORDER D = SINGLE PULSE P DM t t 2 Z JC (t) = r(t) x R JC R JC = 0.4 C/W Peak T J = P DM x Z JC (t) + T C Duty Cycle, D = t / t t, Rectangular Pulse Duration (sec) Figure 2. Transient Thermal Response Curve 6

7 R L Q g VGS Q gs Q gd I G = Const. DUT Charge Figure 3. Gate Charge Test Circuit & Waveform R L 90% 90% 90% V DD R G DUT 0% t d(on) t r 0% t d(off) t f t on t off Figure 4. Resistive Switching Test Circuit & Waveforms L E AS 2 LI 2 AS I D BS I AS R G V DD I D (t) DUT V DD (t) t p t p Time Figure 5. Unclamped Inductive Switching Test Circuit & Waveforms 7

8 DUT + I SD L R G Driver Same Type as DUT V DD dv/dt controlled by R G I SD controlled by pulse period (Driver) Gate Pulse Width D Gate Pulse Period 0 V I FM, Body Diode Forward Current I SD (DUT) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt (DUT) V SD V DD Body Diode Forward Voltage Drop Figure 6. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 8

9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK 3 (TO 263, 3 LEAD) CASE 48AJ ISSUE B DATE 08 OCT 203 SCALE : E E2 L H e NOTE 6 TOP VIEW L2 A D NOTE 3 c A 2X b SIDE VIEW 0.0 M B A M B SEATING PLANE c2 A DETAIL C A M D VIEW A A GAUGE PLANE L3 L E DETAIL C L A 0.0 M B H B A M SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: INCHES. 3. CHAMFER OPTIONAL 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN DIMENSIONS E, L, D AND E. 6. OPTIONAL MOLD FEATURE INCHES MILLIMETERS DIM MIN MAX MIN MAX A A b c c D D E E e 0. BSC 2.54 BSC H L L L L BSC 0.25 BSC M VIEW A A OPTIONAL CONSTRUCTIONS RECOMMENDED SOLDERING FOOTPRINT* XX XXXXXXXXX AWLYWWG GENERIC MARKING DIAGRAMS* XXXXXXXXG AYWW AYWW XXXXXXXXG AKA XXXXXX XXYMW IC Standard Rectifier SSG X X PITCH DIMENSIONS: INCHES *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present. DOCUMENT NUMBER: 98AON56370E STATUS: ON SEMICONDUCTOR STANDARD NEW STANDARD: Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 DESCRIPTION: D 2 PAK 3 (TO 263, 3 LEAD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE OF XXX 2

10 DOCUMENT NUMBER: 98AON56370E PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION. REQ. BY D. TRUHITTE. 04 APR 20 A CORRECTED PITCH ON SOLDER FOOTPRINT TO BE FROM CENTER LINE TO LEAD. REQ. BY D. TRUHITTE. 25 JUL 20 B ADDED GENERIC MARKING DIAGRAM FOR SSG. REQ. BY I. CAMBALIZA. 08 OCT 203 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, 203 October, 203 Rev. B Case Outline Number: 48AJ

11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 800 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative