Symbol Parameter FTP04N60D FTA04N60D Units
|
|
- Dortha Tyler
- 5 years ago
- Views:
Transcription
1 N-Channel MOSFET Pb FTP4N6D FTA4N6D Lead Free Package and Finish Applications: Adaptor Charger SMPS Standby Power Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP4N6D TO-22 FTP4N6D FTA4N6D TO-22F FTA4N6D G D S V DSS R DS(ON) (Max.) I D 6 V A TO-22 G D S Packages Not to Scale TO-22F G D S Absolute Maximum Ratings T C =25 o C unless otherwise specified Symbol Parameter FTP4N6D FTA4N6D Units V DSS Drain-to-Source Voltage (NOTE *1) 6 V I D Continuous Drain Current 4. 4.* I o C Continuous Drain Current Figure 3 A I DM Pulsed Drain V (NOTE *2) Figure 6 Power Dissipation W P D Derating Factor above 25 o C W/ o C Gate-to-Source Voltage ± 3 V E AS Single Pulse Avalanche Engergy L= mh, I D =4. Amps 245 mj I AS Pulsed Avalanche Rating Figure 8 A dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5. V/ns T L T PKG T J and T STG Thermal Resistance Maximum Temperature for Soldering Leads at.63 in (1.6 mm) from Case for seconds Package Body for seconds Operating Junction and Storage Temperature Range 3 26 o C -55 to 15 * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device Symbol Parameter FTP4N6D FTA4N6D Units Test Conditions Drain lead soldered to water cooled heatsink, R JC Junction-to-Case PD adjusted for a peak junction temperature of +15 o C. o C/W R JA Junction-to-Ambient 62 1 cubic foot chamber, free air. 2 InPower Semiconductor Co., Ltd. Page 1 of 9
2 OFF Characteristics TJ=25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage V =V, I D =25μA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure V/ o C Reference to 25 o C, I D =25μA V DS =6V, =V I DSS Drain-to-Source Leakage Current μa V 25 DS =48V, =V T J =125 o C Gate-to-Source Forward Leakage V I GS =+3V GSS na Gate-to-Source Reverse Leakage = -3V ON Characteristics TJ=25 o C unless otherwise specified R Static Drain-to-Source On-Resistance V DS(ON) GS =V, I D =2.4A Figure 9 and. (NOTE *4) (TH) Gate Threshold Voltage, Figure V V DS =, I D =25 A gfs Forward Transconductance S V DS =15V, I D =4A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature C iss Input Capacitance =V C oss Output Capacitance V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance Figure 14 Q g Total Gate Charge VDD=3V Q gs Gate-to-Source Charge nc I D=4A,Vgs=V Q gd Gate-to-Drain ( Miller ) Charge Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-on Delay Time =3V t rise Rise Time I D =4A ns t d(off) Turn-Off Delay Time =V t fall Fall Time R G =9.1 2 InPower Semiconductor Co., Ltd. Page 2 of 9
3 Source-Drain Diode Characteristics Tc=25 o C unless otherwise specified I S Continuous Source Current (Body Diode) A Integral pn-diode I SM Maximum Pulsed Current (Body Diode) A in MOSFET V SD Diode Forward Voltage V I S =4A, =V t rr Reverse Recovery Time ns =V Q rr Reverse Recovery Charge nc I F =4A, di/dt= A/μs Notes: *1. T J = +25 o C to +15 o C. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 4A di/dt < A/μs, < BV DSS, T J =+15 o C. *4. Pulse width < 38μs; duty cycle < 2%. 2 InPower Semiconductor Co., Ltd. Page 3 of 9
4 Z JC, Thermal Impedance (Normalized) E-6 Duty Factor 5% 2% % 5% 2% 1% single pulse Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z JC x R JC +T C E-6 E-6 1E-3 E-3 E-3 1E+ P DM t 1 t 2 E+ t p, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation vs Case Temperature Figure 3. Maximum Continuous Drain Current vs Case Temperature 8 5 P D, Power Dissipation (W) I D, Drain Current (A) T T C, Case Temperature ( o C, Case Temperature ( o C) C) Figure 4. Typical Output Characteristics Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current I D, Drain Current (A) PULSE DURATION = 25 μs DUTY FACTOR =.5% MAX, T C = 25 o C VGS =15V VGS = 7.V VGS = 6.5V VGS = 6.V VGS = 5.5V VGS = 5.V RDS(ON), Drain-to-Source ON Resistance ( PULSE DURATION = μs DUTY FACTOR =.5% MAX T C = 25 o C I D = 16A I D = 8A I D = 4A I D = 2A V DS, Drain-to-Source Voltage (V) , Gate-to-Source Voltage (V) 2 InPower Semiconductor Co., Ltd. Page 4 of 9
5 Figure 6. Maximum Peak Current Capability I DM, Peak Current (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: = E-6 VGS = V E-6 1E-3 E-3 E-3 1E+ E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) PULSE DURATION = μs DUTY CYCLE =.5% MAX VDS = 3 V o C +25 o C -55 o C I AS, Avalanche Current (A) STARTING T J = 25 o C STARTING T J = 15 o C If R= : t AV = (L I AS )/(1.3BV DSS - ) If R : t AV = (L/R) ln[i AS R)/(1.3BV DSS - )+1] R equals total Series resistance of Drain circuit 1 1E-6 E-6 E-6 1E-3 E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance ( ) Figure 9. Typical Drain-to-Source ON Figure. Resistance vs Drain Current PULSE DURATION = μs DUTY CYCLE =.5% MAX TC=25 C = 15V R DS(ON), Drain-to-Source Resistance (Normalized) Typical Drain-to-Source ON Resistance vs Junction Temperature.75 PULSE DURATION = μs.5 DUTY CYCLE =.5% MAX = V, I D = 2.4 A I D, Drain Current (A) T J, Junction Temperature ( o C) 2 InPower Semiconductor Co., Ltd. Page 5 of 9
6 BV DSS, Drain-to-Source Breakdown Voltage (Normalized) Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature.95 = V.6 I D = 25 μa (TH), Threshold Voltage (Normalized) = V DS I D = 25 μa Typical Threshold Voltage vs Junction Temperature T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs Drain-to-Source Voltage I D, Drain Current (A) 1. μs μ 1ms ms C oss OPERATION IN THIS AREA = V, f = 1MHz.1 1. MAY BE LIMITED BY R C DS(ON) iss = C gs + C gd C C rss oss C ds + C T gd J = MAX RATED C rss = C gd T C = 25 o C DC C, Capacitance (pf) C iss V DS, Drain-to-Source Voltage (V) V DS, Drain Voltage (V), Gate-to-Source Voltage (V) Figure 15. Typical Gate Charge Figure 16. vs Gate-to-Source Voltage V DS = 15V V DS = 3V V DS = 45V I D = 4A I SD, Reverse Drain Current (A) Typical Body Diode Transfer Characteristics +15 o C +25 o C = V 1.4 Q G, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) 2 InPower Semiconductor Co., Ltd. Page 6 of 9
7 Test Circuits and Waveforms V DS I D I D V DS Miller Region D.U.T. (TH) 1 ma Q gs Q gd Q g Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform R L V DS 9% V DS R G D.U.T. % t d(on) t rise t d(off) t fall Figure 19. Resistive Switching Test Circuit Figure 2. Resistive Switching Waveforms 2 InPower Semiconductor Co., Ltd. Page 7 of 9
8 Test Circuits and Waveforms di/dt adj. Current Pump Double Pulse I D di/dt = A/μA D.U.T. Q rr L t rr I D Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BV DSS L Series Switch (MOSFET) I AS BV DSS D.U.T. Commutating Diode t AV 5 I AS t p I 2 AS L EAS 2 Figure 23. Unclamped Inductive Switching Test Circuit Figure 24. Unclamped Inductive Switching Waveforms 2 InPower Semiconductor Co., Ltd. Page 8 of 9
9 Disclaimers: InPower Semiconductor Co., Ltd (IPS) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to IPS s terms and conditions supplied at the time of order acknowledgement. InPower Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent IPS deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessarily performed. InPower Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using IPS s components. To minimize risk, customers must provide adequate design and operating safeguards. InPower Semiconductor Co., Ltd does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in IPS s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. InPower Semiconductor Co., Ltd is not responsible or liable for such altered documentation. Resale of IPS s products with statements different from or beyond the parameters stated by InPower Semiconductor Co., Ltd for that product or service voids all express or implied warrantees for the associated IPS s product or service and is unfair and deceptive business practice. InPower Semiconductor Co., Ltd is not responsible or liable for any such statements. Life Support Policy: InPower Semiconductor Co., Ltd s products are not authorized for use as critical components in life support devices or systems without the expressed written approval of InPower Semiconductor Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 2 InPower Semiconductor Co., Ltd. Page 9 of 9
IPS. Symbol Parameter Maximum Units
FTD36N6N N-Channel MOSFET Pb Lead Free Package and Finish Applications: Automotive DC Motor Control DC-DC Converters and Off-Line UPS Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current
More informationSymbol Parameter FSW25N50A Units
FSW25N5A N-Channel MOSFET Applications: Uninterruptible Power Supply(UPS) LCD Panel Power SMPS Power DC-AC Inverter FSW25N5 RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width
More informationSymbol Parameter FTP06N65 Units
FTP11N8 N-Channel MOSFET Applications: Automotive DC Motor Control Class D Amplifier Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves
More informationPower Dissipation W Derating Factor above 25 o C W/ o C V GS Gate-to-Source Voltage ± 30 V
ITD3N8A ITU3N8A N-Channel MOSFET Pb Lead Free Package and Finish Applications: CRT, TV/Monitor Other Applications V DSS R DS(ON) (Typ.) I D 8 V 3.8 : 3. A Features: RoHS Compliant Low ON Resistance Low
More informationV DSS R DS(ON) (Max.) I D
FTP18N6 N-Channel MOSFET Pb Lead Free Package and Finish Applications: DC Motor Control UPS Class D Amplifier V DSS R DS(ON) (Max.) I D 6V 18 mω 59A Features: RoHS Compliant Low ON Resistance Low Gate
More informationI AS Pulsed Avalanche Rating Figure 8 A dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5.0 V/ns
N-Channel MOSFET Pb PTP6N65 PTA6N65 Lead Free Package and Finish Applications: Adaptor Charger SMPS Power Supply LCD Panel Power Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current
More informationVDSS RDS(on)(Typ) ID (Max) 950V A. Symbol Parameter Maximum Units Test Condition
N-Channel MOSFET Pb ISW11N9A Lead Free Package and Finish Applications: ATX Power LCD Panel Power VDSS RDS(on)(Typ) ID (Max) 95V.85 11A Features: RoHS Compliant & Halogen Free Low ON Resistance Low Gate
More informationVDSS RDS(on)(Typ) ID (Max) 800V A G D S
N-Channel MOSFET Pb ISW1N8A Lead Free Package and Finish Applications: ATX Power LCD Panel Power VDSS RDS(on)(Typ) ID (Max) 8V.8 1A Features: RoHS Compliant & Halogen Free Low ON Resistance Low Gate Charge
More informationThermal Resistance Symbol Parameter Max. Units Test Conditions
N-Channel MOSFET Applications: Adaptor Charger SMPS Lead Free Package and Finish V DSS R DS(ON) (Typ.) I D 400V 0.8Ω 5A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse
More informationOperating Junction and Storage 150,-55 to150 Temperature Range. Symbol Parameter Typ. Units Test Conditions
N-Channel MOSFET Applications: Adaptor Charger SMPS Lead Free Package and Finish V DSS R DS(ON) (Typ.) I D 40V 3.5mΩ 202A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse
More informationCaution: Stresses greater than those listed in the Absolute Maximum Ratings may cause permanent damage to the device.
400V N-Channel MOSFET General Features Proprietary New Planar Technology R DS(ON),typ. =0.35 Ω@V GS =10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode BV DSS R DS(ON),typ. I D 400V 0.35Ω
More informationT C =25 unless otherwise specified. A I DM Pulsed Drain Current, V [2] Figure 6 P D. 270 mj dv/dt Peak Diode Recovery dv/dt [3] 4.
400V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 8.6nC) Fast Switching 00% Avalanche Tested RoHS Compliant/Lead Free BV DSS R DS(ON) (Max.) I D 400V.0Ω 5.5A Applications
More informationFTW20N50A. General Description
FTW2N5A General Description FTW2N5A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
More informationMXP3007CT MXP3007CD Datasheet 30V N-Channel MOSFET
MXP3007CT MXP3007CD Datasheet 30V N-Channel MOSFET Applications: Power Supply DC-DC Converters V DSS R DS(ON) (Max) I D a 30 V 7.0 mω 114A Features: Lead Free Low R DS(ON) to Minimize Conductive Loss Low
More informationElectrical Characteristics OFF Characteristics BV DSX Drain-to-Source Breakdown Voltage V V GS =-5V, I D =25µA I D(OFF) I GSS ON Characteristi
Depletion-Mode Power MOSFET General Features ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS
More informationBV DSX R DS(ON) (Max.) I DSS,min. 150V 15 Ω 200mA
Depletion-Mode Power MOSFET General Features ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS
More informationBV DSX R DS(ON) (Max.) I DSS,min. Part Number Package Marking Remark. T A =25 unless otherwise specified
Depletion-Mode Power MOSFET General Features ESD improved Capability Depletion Mode (Normally On) Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS
More informationMXP4004BT/BE Datasheet. 40V N-Channel MOSFET. Applications: Power Supply DC-DC Converters
4V N-Channel MOSFET MXP44BT/BE Datasheet Applications: Power Supply DC-DC Converters Features: LeadFree Low R DS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized
More informationMXP4004AT Datasheet. 40V N-Channel MOSFET. Applications: Power Supply DC-DC Converters
4V N-Channel MOSFET MXP44AT Datasheet Applications: Power Supply DC-DC Converters V DSS R DS(ON) (Max) I D a 4 V 4. mω 58 A Features: LeadFree Low R DS(ON) to Minimize Conductive Loss Low Gate Change for
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationUNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
More informationUNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
More informationUNISONIC TECHNOLOGIES CO., LTD UT50N04
UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationUNISONIC TECHNOLOGIES CO., LTD
6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar
More information8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES
MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation
More informationPNMTOF600V20 N-Channel MOSFET
PNMTOF6V2 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) (A) 6.45@ =V 2 D
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
More informationUNISONIC TECHNOLOGIES CO., LTD 5N60
UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationonlinecomponents.com
FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe
More informationN Channel MOSFET Lead Free Package and Finish Applications: VDSS. Not to Scale. Continuous Drain Current. Power Dissipation 46
N Channel MOSFET Lead Free Package and Finish Applications: Adapter & Charger ID RDS(ON)(Typ.) VDSS SMPS Standby Power 7.0A 1.1Ω 650V AC-DC Switching Power Supply LED driving power Features: Low On Resistance
More information12N60 12N65 Power MOSFET
12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationUNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers
More informationUNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 4 Amps,6 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N6 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
More informationSingle Pulsed (Note 4) E AS 1100 mj Repetitive (Note 5) E AR 29 mj Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns 290 TO-3PL P D 220
500V N-Channel MOSFET Voltage 500 V Current 24A Features: R DS(ON), @,I D@ 12.0A
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 24A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 10N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
More informationUNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized
More informationHFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More informationUNISONIC TECHNOLOGIES CO., LTD UTT100N06
UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers
More informationUNISONIC TECHNOLOGIES CO., LTD UFZ24N-F
UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F 17A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ24N-F is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationPower MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationFeatures. TO-220F FQPF Series
250V P-Channel MOSFET April 2000 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
More informationN-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..
Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
More informationFeatures. TO-220F FQPF Series
FQPF6N60 FQPF6N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
More informationFeatures. TO-3P FQA Series
FQA24N60 FQA24N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More information2N65 650V N-Channel Power MOSFET
R S E M I C O N D U C T O R FEATURES RDS(ON)< 4. 4Ω @VGS=1V, ID= 1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/ dt capability, high ruggedness MECHANICAL DATA
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
More informationFeatures G D. TO-220 FQP Series
FQP7N60 FQP7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS
More informationUNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ
UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time,
More informationFeatures. TO-3P FQA Series
FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationUNISONIC TECHNOLOGIES CO., LTD UTT200N03
UNISONIC TECHNOLOGIES CO., LTD UTT200N03 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC s advanced technology to provide customers with a minimum on-state
More informationPower MOSFET FEATURES. IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N
Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.24 Q g (Max.) (nc) 24 Q gs (nc) 40 Q gd (nc) 57 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationUNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC s advanced technology to provide costumers
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
More informationHRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET
HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationFeatures. I-PAK FQU Series
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFeatures. I-PAK FQU Series
250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationCharacteristic Value Units Drain-to-Source Voltage. 28 Continuous Drain Current (T C =100 C)
$GYDQFHG 3RZHU 026)(7 IRL540A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10µA (Max.)
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect
More informationN-Channel 60 V (D-S), 175 C MOSFET, Logic Level
N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature
More informationFeatures G D. TO-220 FQP Series
100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationPower MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single D HVMDIP G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead
More informationFeatures. I 2 -PAK FQI Series
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationBase Part Number Package Type Standard Pack Orderable Part Number
V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
More informationUNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More informationPower MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More information