I AS Pulsed Avalanche Rating Figure 8 A dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5.0 V/ns

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1 N-Channel MOSFET Pb PTP6N65 PTA6N65 Lead Free Package and Finish Applications: Adaptor Charger SMPS Power Supply LCD Panel Power Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Ordering Information PART NUMBER PACKAGE BRAND PTP6N65 TO-22 PTA6N65 TO-22F G D S V DSS R DS(ON) (Typ.) I D 65 V A TO-22 G D S Packages Not to Scale TO-22F G D S Absolute Maximum Ratings T C =25 o C unless otherwise specified Symbol Parameter PTP6N65 PTA6N65 Units V DSS Drain-to-Source Voltage (NOTE *1) 65 V I D Continuous Drain Current 6. 6.* I o C Continuous Drain Current Figure 3 A I DM Pulsed Drain V (NOTE *2) Figure 6 Power Dissipation W P D Derating Factor above 25 o C W/ o C Gate-to-Source Voltage ± 3 V E AS Single Pulse Avalanche Engergy L= mh 25 mj I AS Pulsed Avalanche Rating Figure 8 A dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5. V/ns T L T PKG T J and T STG Thermal Resistance Maximum Temperature for Soldering Leads at.63 in (1.6 mm) from Case for seconds Package Body for seconds Operating Junction and Storage Temperature Range 3 26 o C -55 to 15 * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the device. Symbol Parameter PTP6N65 PTA6N65 Units Test Conditions Drain lead soldered to water cooled heatsink, R JC Junction-to-Case PD adjusted for a peak junction temperature of +15 o C. o C/W R JA Junction-to-Ambient 62 1 cubic foot chamber, free air. Page 1 of 9 P P A PP P P P 1 A

2 OFF Characteristics TJ=25 o C unless otherwise specified BV DSS Drain-to-Source Breakdown Voltage V =V, I D =25μA BV DSS / T J BreakdownVoltage Temperature Coefficient, Figure V/ o C Reference to 25 o C, I D =25μA V DS =65V, =V I DSS Drain-to-Source Leakage Current μa V DS =52V, =V T J =125 o C Gate-to-Source Forward Leakage V I GS =+3V GSS na Gate-to-Source Reverse Leakage = -3V ON Characteristics TJ=25 o C unless otherwise specified R Static Drain-to-Source On-Resistance V DS(ON) GS =V, I D =2.5A Figure 9 and. (NOTE *4) (TH) Gate Threshold Voltage, Figure V V DS =, I D =25A gfs Forward Transconductance S V DS =3V, I D =6A (NOTE *4) Dynamic Characteristics Essentially independent of operating temperature C iss Input Capacitance =V C oss Output Capacitance V DS =25V pf f=1.mhz C rss Reverse Transfer Capacitance Figure 14 Q g Total Gate Charge VDD=325V Q gs Gate-to-Source Charge nc I D=6AVgs=V Q gd Gate-to-Drain ( Miller ) Charge Figure 15 Resistive Switching Characteristics Essentially independent of operating temperature t d(on) Turn-on Delay Time V DD =325V t rise Rise Time I D =6A ns t d(off) Turn-Off Delay Time =V t fall Fall Time R G =12 2

3 Source-Drain Diode Characteristics Tc=25 o C unless otherwise specified I S Continuous Source Current (Body Diode) A Integral pn-diode I SM Maximum Pulsed Current (Body Diode) A in MOSFET V SD Diode Forward Voltage V I S =6A, =V t rr Reverse Recovery Time ns =V Q rr Reverse Recovery Charge nc I F =6A, di/dt= A/μs Notes: *1. T J = +25 o C to +15 o C. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. I SD = 6 A, di/dt < A/μs, V DD < BV DSS, T J =+15 o C. *4. Pulse width < 38μs; duty cycle < 2%. 3

4 Z JC, Thermal Impedance (Normalized) E-6 Duty Factor 5% 2% % 5% 2% 1% single pulse Figure 2. Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case E-6 E-6 1E-3 E-3 E-3 1E+ Maximum Power Dissipation vs Case Temperature t p, Rectangular Pulse Duration (s) P DM t 1 t 2 NOTES: DUTY FACTOR: D=t1/t2 PEAK T J =P DM x Z JC x R JC +T C E+ Figure 3. Maximum Continuous Drain Current vs Case Temperature P D, Power Dissipation (W) TO-22F TO-22 I D, Drain Current (A) T T C, Case Temperature ( o C, Case Temperature ( o C) C) Figure 4. Typical Output Characteristics Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current I D, Drain Current (A) PULSE DURATION = 25 μs DUTY FACTOR =.5% MAX, T C = 25 o C VGS =15V VGS = 6.5V VGS = 6.V VGS = 5.5V VGS = 5.V VGS = 4.5V RDS(ON), Drain-to-Source ON Resistance ( PULSE DURATION = μs DUTY FACTOR =.5% MAX T C = 25 o C I D = 18A I D = 12A I D = 6A I D = 2.5A V DS, Drain-to-Source Voltage (V) , Gate-to-Source Voltage (V) InPower Semiconductor Co., Ltd. Page 4 of 9 ITP6N65A/ITA6N65A Rev. A. Feb. 213

5 Figure 6. Maximum Peak Current Capability I DM, Peak Current (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = 15 I TC 125 VGS = V 1 E-6 E-6 1E-3 E-3 E-3 1E+ E+ t p, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability I D, Drain-to-Source Current (A) PULSE DURATION = 38 μs DUTY CYCLE =.5% MAX VDS = 3 V o C +25 o C -55 o C I AS, Avalanche Current (A) STARTING T J = 25 o C STARTING T J = 15 o C 1 If R= : t AV = (L I AS )/(1.3BV DSS -V DD ) If R : t AV = (L/R) ln[i AS R)/(1.3BV DSS -V DD )+1] R equals total Series resistance of Drain circuit.1 1E-6 E-6 E-6 1E-3 E-3, Gate-to-Source Voltage (V) t AV, Time in Avalanche (s) R DS(ON), Drain-to-Source ON Resistance () Figure 9. Typical Drain-to-Source ON Figure. Resistance vs Drain Current PULSE DURATION = μs DUTY CYCLE =.5% MAX TC=25 C = V 12 R DS(ON), Drain-to-Source Resistance (Normalized) Typical Drain-to-Source ON Resistance vs Junction Temperature PULSE DURATION = μs.75 DUTY CYCLE =.5% MAX = V, I D = 2.5 A I D, Drain Current (A) T J, Junction Temperature ( o C) 5

6 BV DSS, Drain-to-Source Breakdown Voltage (Normalized) Figure 11. Typical Breakdown Voltage vs Figure 12. Junction Temperature.95 = V.7 I D = 25 μa (TH), Threshold Voltage (Normalized) = V DS I D = 25 μa Typical Threshold Voltage vs Junction Temperature T J, Junction Temperature ( o C) T J, Junction Temperature ( o C) Figure 13. Maximum Forward Bias Safe Figure 14. Operating Area Typical Capacitance vs Drain-to-Source Voltage I D, Drain Current (A). T J = MAX RATED T C = 25 o C Single Pulse. μs μ 1ms 1. C oss OPERATION IN THIS AREA = V, f = 1MHz MAY BE LIMITED BY R C DS(ON) iss = C gs + C gd C oss C ds + C T gd J = MAX RATED C rss = C gd.1 T C = 25 o C 1 C rss ms C, Capacitance (pf) C iss V DS, Drain-to-Source Voltage (V) V DS, Drain Voltage (V) Figure 15. Typical Gate Charge Figure 16. vs Gate-to-Source Voltage Typical Body Diode Transfer Characteristics, Gate-to-Source Voltage (V) V DS = 165V V DS = 325V V DS = 48V I D =6A I SD, Reverse Drain Current (A) +15 o C +25 o C -55 O C = V Q G, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) InPower Semiconductor Co., Ltd. Page 6 of 9 ITP6N65A/ITA6N65A Rev. A. Feb. 213

7 TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS L R G Driver V DD Same Type as D.U.T. * dv/dt controlled by R G * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit (Driver) P.W. Period D= P. W. Period = V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) V DD Body Diode Forward Voltage Drop Fig. 1.2 Peak Diode Recovery dv/dt Waveforms 7

8 TEST CIRCUITS AND WAVEFORMS (Cont.) V DS R L V DS 9% V DD R G V D.U.T. % t D(ON ) Fig. 2.1 Switching Test Circuit t R t D(OFF) t F Fig. 2.2 Switching Waveforms Vdd C1 Rp C2 Same Type as D.U.T. V Q G V DS Q GS Q GD DUT 1mA V G Charge Fig Gate Charge Test Circuit Fig Gate Charge Waveform L V DS BV DSS R D V DD V D.U.T. t p IAS t p Time Fig. 4.1 Unclamped Inductive Switching Test Circuit Fig. 4.2 Unclamped Inductive Switching Waveforms InPower Semiconductor Co., Ltd. Page 8 of 9 ISD4N6A REV. B. Apr. 214

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