QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

Size: px
Start display at page:

Download "QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY"

Transcription

1 TM DVNCD INR DVIC, INC. QUD/DU N-CHNN DPTION MOD PD PRCIION MTCHD PIR MOFT RRY PD N B D D485/D495 VG(th)= -.5V GNR DCRIPTION D485/D495 ar high prcision monolithic quad/dual dpltion mod N-Channl MOFTs matchd at th factory using D s provn PD CMO tchnology. Ths dvics ar intndd for low voltag, small signal applications. Thy ar xcllnt functional rplacmnts for normally-closd rlay applications, as thy ar normally on (conducting) without any powr applid, ut could turnd off or modulatd whn systm powr supply is turnd on. Ths MOFTs hav th uniqu charactristics of, whn th gat is groundd, oprating in th rsistanc mod for low drain voltag lvls and in th currnt sourc mod for highr voltag lvls and providing a constant drain currnt. D485/D495 MOFTs ar dsignd for xcptional dvic lctrical charactristics matching. s ths dvics ar on th sam monolithic chip, thy also xhiit xcllnt tmpratur tracking charactristics. Thy ar vrsatil as dsign componnts for a road rang of analog applications such as asic uilding locks for currnt sourcs, diffrntial amplifir input stags, transmission gats, and multiplxr applications. Bsids matchd pair lctrical charactristics, ach individual MOFT also xhiits wll controlld paramtrs, naling th usr to dpnd on tight dsign limits. vn units from diffrnt atchs and diffrnt dat of manufactur hav corrspondingly wll matchd charactristics. Ths dpltion mod dvics ar uilt for minimum offst voltag and diffrntial thrmal rspons, and thy ar dsignd for switching and amplifying applications in singl 5V to +/-5V systms whr low input ias currnt, low input capacitanc and fast switching spd ar dsird. Ths dvics xhiit wll controlld turn-off and su-thrshold charactrsitics and thrfor can usd in dsigns that dpnd on su-thrshold charactristics. Th D485/D495 ar suital for us in prcision applications which rquir vry high currnt gain, ta, such as currnt mirrors and currnt sourcs. sampl calculation of th DC currnt gain at a drain currnt of m and gat input lakag currnt of p =,,. It is rcommndd that th usr, for most applications, connct th V+ pin to th most positiv voltag and th V- and IC pins to th most ngativ voltag in th systm. ll othr pins must hav voltags within ths voltag limits at all tims. FTUR Dpltion mod (normally ON) Prcision Gat Thrshold Voltags: -.5V +/-.5V Nominal R G =.V of 54Ω Matchd MOFT to MOFT charactristics Tight lot to lot paramtric control ow input capacitanc V G(th) match (V O ) mv High input impdanc Ω typical Positiv, zro, and ngativ V G(th) tmpratur cofficint DC currnt gain > 8 ow input and output lakag currnts ORDRING INFORMTION ( suffix dnots lad-fr (RoH)) Oprating Tmpratur Rang* C to +7 C C to +7 C PPICTION Functional rplacmnt of Form B (NC) rlay Zro powr fail saf circuits Backup attry circuits Powr failur dtctor Fail saf signal dtctor ourc followrs and uffrs Prcision currnt mirrors Prcision currnt sourcs Capacitivs pros nsor intrfacs Charg dtctors Charg intgrators Diffrntial amplifir input stag High sid switchs Pak dtctors ampl and Hold larm systms Currnt multiplirs nalog switchs nalog multiplxrs Voltag comparators vl shiftrs PIN CONFIGURTION IC* G N D N V - D485 V - V M M 4 4 V + 5 V - D N4 G N4 6 7 M 4 M IC* 8 V - V - 9 IC* G N D N C, PC PCKG D495 V- V- 8 7 M M 6 4 V- 5 IC* G N D N V + 4 D N G N IC* IC* G N D N V- 6-Pin 6-Pin 8-Pin 8-Pin OIC Plastic Dip OIC Plastic Dip Packag Packag Packag Packag D485C D485PC D495 D495P * Contact factory for industrial tmp. rang or usr-spcifid thrshold voltag valus, P PCKG *IC pins ar intrnally connctd, connct to V- Rv. dvancd inar Dvics, Inc. 45 Tasman Driv, unnyval, C Tl: (48) Fax: (48)

2 BOUT MXIMUM RTING Drain-ourc voltag, V D.6V Gat-ourc voltag, V G.6V Powr dissipation 5 mw Oprating tmpratur rang C, PC,, P packag C to +7 C torag tmpratur rang -65 C to +5 C ad tmpratur, sconds +6 C CUTION: D nsitiv Dvic. Us static control procdurs in D controlld nvironmnt. OPRTING CTRIC CHRCTRITIC V+ = +5V V- = -5V T = 5 C unlss othrwis spcifid D485/D495 Paramtr ymol Min Typ Max Unit Tst Conditions Gat Thrshold Voltag VG(th) V ID = µ, VD =.V Offst Voltag VO 7 mv VG(th)-VG(th) Offst VoltagTmpco TCVO 5 µv/ C VD = VD GatThrshold Voltag Tmpco TCVG(th) -.7 mv/ C ID = µ, VD =.V. ID = µ, VD =.V +.6 ID = 4µ, VD =.V On Drain Currnt ID (ON). m VG = +6.V, VD = +5V. VG = +.5V, VD = +5V Forward Transconductanc GF.4 mmho VG = +.5V VD = +5.5V Transconductanc Mismatch GF.8 % Output Conductanc GO 68 µmho VG = +.5V VD = +5.5V Drain ourc On Rsistanc RD (ON) 54 Ω VD =.V VG = +.V Drain ourc On Rsistanc RD (ON) 5 % Tolranc Drain ourc On Rsistanc RD (ON).5 % Mismatch Drain ourc Brakdown BVDX V ID =.µ Voltag VG = -4.5V Drain ourc akag Currnt ID (OFF) 4 p VG = -4.5V, VD =+5V 4 n T = 5 C Gat akag Currnt IG p VD = V, VG = 5V n T =5 C Input Capacitanc CI.5 pf Transfr Rvrs Capacitanc CR. pf Turn-on Dlay Tim ton ns V+ = 5V, R= 5KΩ Turn-off Dlay Tim toff ns V+ = 5V, R= 5KΩ Crosstalk 6 db f = KHz Nots: Consists of junction lakag currnts D485/D495 dvancd inar Dvics of

3 D8xx/D9xx/D48xx/D49xx ar monolithic quad/dual N-Channl MOFTs matchd at th factory using D s provn PD CMO tchnology. Ths dvics ar intndd for low voltag, small signal applications. D s lctrically Programmal nalog Dvic (PD) tchnology provids th industry s only family of matchd transistors with a rang of prcision thrshold valus. ll mmrs of this family ar dsignd and activly programmd for xcptional matching of dvic lctrical charactristics. Thrshold valus rang from -.5V Dpltion to +.5V nhancmnt dvics, including standard products spcifid at -.5V, -.V, -.4V, +.V, +.V, +.4V, +.8V, +.4V, and +.V. D can also provid any customr dsird valu twn -.5V and +.5V. For all ths dvics, vn th dpltion and zro thrshold transistors, D PD tchnology nals th sam wll controlld turn-off, suthrshold, and low lakag charactristics as standard nhancmnt mod MOFTs. With th dsign and activ programming, vn units from diffrnt atchs and diffrnt dat of manufactur hav wll matchd charactristics. s ths dvics ar on th sam monolithic chip, thy also xhiit xcllnt tmpco tracking. This PD MOFT rray product family (PD MOFT) is availal in th thr sparat catgoris, ach providing a distinctly diffrnt st of lctrical spcifications and charactristics. Th first catgory is th D8/D9 Zro-Thrshold mod PD MOFTs. Th scond catgory is th D8xx/ D9xx nhancmnt mod PD MOFTs. Th third catgory is th D48xx/D49xx dpltion mod PD MOFTs. (Th suffix xx dnots thrshold voltag in. V stps, for xampl, xx=8 dnots.8v). PRFORMNC CHRCTRITIC OF PD PRCIION MTCHD PIR MOFT FMIY currnts and channl/junction lakag currnts. Whn ngativ signal voltags ar applid to th gat trminal, th dsignr/usr can dpnd on th PD MOFT dvic to controlld, modulatd and turnd off prcisly. Th dvic can modulatd and turnd-off undr th control of th gat voltag in th sam mannr as th nhancmnt mod PD MOFT and th sam dvic quations apply. PD MOFTs ar idal for minimum offst voltag and diffrntial thrmal rspons, and thy ar usd for switching and amplifying applications in low voltag (V to V or +/-.5V to +/-5V) or ultra low voltag (lss than V or +/-.5V) systms. Thy fatur low input ias currnt (lss than p max.), ultra low powr (microwatt) or Nanopowr (powr masurd in nanowatt) opration, low input capacitanc and fast switching spd. Ths dvics can usd whr a comination of ths charactristics ar dsird. KY PPICTION NVIRONMNT PD( MOFT rray products ar for circuit applications in on or mor of th following oprating nvironmnts: * ow voltag: V to V or +/-.5V to +/- 5V * Ultra low voltag: lss than V or +/-.5V * ow powr: voltag x currnt = powr masurd in microwatt * Nanopowr: voltag x currnt = powr masurd in nanowatt * Prcision matching and tracking of two or mor MOFTs CTRIC CHRCTRITIC Th D8/D9 (quad/dual) ar PD MOFTs in which th individual thrshold voltag of ach MOFT is fixd at zro. Th thrshold voltag is dfind as I D = V D =.V whn th gat voltag V G =.V. Zro thrshold dvics oprat in th nhancmnt rgion whn opratd aov thrshold voltag and currnt lvl (V G >.V and I D > u) and suthrshold rgion whn opratd at or low thrshold voltag and currnt lvl (V G <=.V and I D < u). This dvic, along with othr vry low thrshold voltag mmrs of th product family, constitut a class of PD MOFTs that nal ultra low supply voltag opration and nanopowr typ of circuit dsigns, applical in ithr analog or digital circuits. Th D8xx/D9xx (quad/dual) product family faturs prcision matchd nhancmnt mod PD MOFT dvics, which rquir a positiv ias voltag to turn on. Prcision thrshold valus such as +.4V, +.8V, +.V ar offrd. No conductiv channl xists twn th sourc and drain at zro applid gat voltag for ths dvics, xcpt that th +.V vrsion has a suthrshold currnt at aout n. Th D48xx/D49xx (quad/dual) faturs dpltion mod PD MOFTs, which ar normally-on dvics whn th gat ias voltag is at zro volt. Th dpltion mod thrshold voltag is at a ngativ voltag lvl at which th PD MOFT turns off. Without a supply voltag and/or with V G =.V th PD MOFT dvic is alrady turnd on and xhiits a dfind and controlld on-rsistanc twn th sourc and drain trminals. Th D48xx/D49xx dpltion mod PD MOFTs ar diffrnt from most othr typs of dpltion mod MOFTs and crtain typs of JFTs in that thy do not xhiit high gat lakag Th turn-on and turn-off lctrical charactristics of th PD MOFT products ar shown in th Drain-ourc On Currnt vs Drain-ourc On Voltag and Drain-ourc On Currnt vs Gat- ourc Voltag graphs. ach graph show th Drain-ourc On Currnt vrsus Drain-ourc On Voltag charactristics as a function of Gat-ourc voltag in a diffrnt oprating rgion undr diffrnt ias conditions. s th thrshold voltag is tightly spcifid, th Drain-ourc On Currnt at a givn gat input voltag is ttr controlld and mor prdictal whn compard to many othr typs of MOFTs. PD MOFTs hav similarly to a standard MOFT, thrfor classic quations for a n-channl MOFT applis to PD MOFT as wll. Th Drain currnt in th linar rgion (V D < V G - V G(th) ) is givn y: I D = u. C OX. W/. [V G - V G(th) - V D /]. V D whr: u = Moility C OX = Capacitanc / unit ara of Gat lctrod V G = Gat to ourc voltag V G(th) = Turn-on thrshold voltag V D = Drain to ourc voltag W = Channl width = Channl lngth In this rgion of opration th I D valu is proportional to V D valu and th dvic can usd as gat-voltag controlld rsistor. For highr valus of V D whr V D >= V G - V G(th), th saturation currnt I D is now givn y (approx.): I D = u. C OX. W/. [V G - V G(th) ] D485/D495 dvancd inar Dvics of

4 UB-THRHOD RGION OF OPRTION PRFORMNC CHRCTRITIC OF PD PRCIION MTCHD PIR MOFT FMIY (cont.) ZRO TMPRTUR COFFICINT (ZTC) OPRTION ow voltag systms, namly thos oprating at 5V,.V or lss, typically rquir MOFTs that hav thrshold voltag of V or lss. Th thrshold, or turn-on, voltag of th MOFT is a voltag low which th MOFT conduction channl rapidly turns off. For analog dsigns, this thrshold voltag dirctly affcts th oprating signal voltag rang and th oprating ias currnt lvls. t or low thrshold voltag, an PD MOFT xhiits a turnoff charactristic in an oprating rgion calld th suthrshold rgion. This is whn th PD MOFT conduction channl rapidly turns off as a function of dcrasing applid gat voltag. Th conduction channl inducd y th gat voltag on th gat lctrod dcrass xponntially and causs th drain currnt to dcras xponntially. Howvr, th conduction channl dos not shut off aruptly with dcrasing gat voltag, ut dcrass at a fixd rat of approximatly 6mV pr dcad of drain currnt dcras. Thus if th thrshold voltag is +.V, for xampl, th drain currnt is u at V G = +.V. t V G = +.9V, th drain currnt would dcras to.u. xtrapolating from this, th drain currnt is.u (n) at V G = -.V, n at V G = -.4V, and so forth. This suthrshold charactristic xtnds all th way down to currnt lvls low n and is limitd y othr currnts such as junction lakag currnts. t a drain currnt to dclard zro currnt y th usr, th Vgs voltag at that zro currnt can now stimatd. Not that using th aov xampl, with V G(th) = +.V, th drain currnt still hovrs around n whn th gat is at zro volt, or ground. OW POWR ND NNOPOWR Whn supply voltags dcras, th powr consumption of a givn load rsistor dcrass as th squar of th supply voltag. o on of th nfits in rducing supply voltag is to rduc powr consumption. Whil dcrasing powr supply voltags and powr consumption go hand-in-hand with dcrasing usful C andwidth and at th sam tim incrass nois ffcts in th circuit, a circuit dsignr can mak th ncssary tradoffs and adjustmnts in any givn circuit dsign and ias th circuit accordingly. With PD MOFTs, a circuit that prforms a spcific function can dsignd so that powr consumption can minimizd. In som cass, ths circuits oprat in low powr mod whr th powr consumd is masur in micro-watts. In othr cass, powr dissipation can rducd to nano-watt rgion and still provid a usful and controlld circuit function opration. For an PD MOFT in this product family, thr xist oprating points whr th various factors that caus th currnt to incras as a function of tmpratur alanc out thos that caus th currnt to dcras, thry cancling ach othr, and rsulting in nt tmpratur cofficint of nar zro. On of this tmpratur stal oprating point is otaind y a ZTC voltag ias condition, which is.55v aov a thrshold voltag whn V G = V D, rsulting in a tmpratur stal currnt lvl of aout 68u. For othr ZTC oprating points, s ZTC charactristics. PRFORMNC CHRCTRITIC Prformanc charactristics of th PD MOFT product family ar shown in th following graphs. In gnral, th thrshold voltag shift for ach mmr of th product family causs othr affctd lctrical charactristics to shift with an quivalnt linar shift in V G(th) ias voltag. This linar shift in V G causs th suthrshold I-V curvs to shift linarly as wll. ccordingly, th suthrshold oprating currnt can dtrmind y calculating th gat voltag drop rlativ from its thrshold voltag, V G(th). RD(ON) T VG=GROUND vral of th PD MOFTs produc a fixd rsistanc whn thir gat is groundd. For D8, th drain currnt at V D =.V is at u at V G =.V. Thus just y grounding th gat of th D8, a rsistor with R D(ON) = ~KOhm is producd. Whn an D484 gat is groundd, th drain currnt I D = 8.5 u@ V D =.V, producing R D(ON) = 5.4KOhm. imilarly, D48 and D485 producs 77u and 85u, rspctivly, at V G =.V, producing R D(ON) valus of.kohm and 54Ohm, rspctivly. MTCHING CHRCTRITIC ky nfit of using matchd-pair PD MOFT is to maintain tmpratur tracking. In gnral, for PD MOFT matchd pair dvics, on dvic of th matchd pair has gat lakag currnts, junction tmpratur ffcts, and drain currnt tmpratur cofficint as a function of ias voltag that cancl out similar ffcts of th othr dvic, rsulting in a tmpratur stal circuit. s mntiond arlir, this tmpratur staility can furthr nhancd y iasing th matchd-pairs at Zro Tmpco (ZTC) point, vn though that could rquir spcial circuit configuration and powr consumption dsign considration. D485/D495 dvancd inar Dvics 4 of

5 TYPIC PRFORMNC CHRCTRITIC DRIN OURC ON CURRNT (m) OUTPUT CHRCTRITIC 5 T = +5 C V G -V G(TH) =+5V 4 V G -V G(TH) =+4V V G -V G(TH) =+V V G -V G(TH) =+V V G -V G(TH) =+V DRIN-OURC ON VOTG (V) DRIN-OURC ON RITNC (Ω) DRIN-OURC ON RITNC vs. DRIN-OURC ON CURRNT T = 5 C V G = V G(TH) +4V V G = V G(TH) +6V DRIN-OURC ON CURRNT (µ) DRIN- OURC ON CURRNT (m ) 5 5 FORWRD TRNFR CHRCTRITIC T = 5 C V D = +V VG(TH) =.V VG(TH) = +.V VG(TH) = -.4V VG(TH) = -.V GT-OURC VOTG (V) VG(TH) = -.5V VG(TH) = +.4V VG(TH) = +.8V TRNCONDUCTNC (m/v) TRNCONDUCTNC vs. MBINT TMPRTUR MBINT TMPRTUR ( C) DRIN-OURC ON CURRNT (n) UBTHRHOD FORWRD TRNFR CHRCTRITIC T = +5 C V D =+.V V G(TH) =-.V V G(TH) =.V. V G(TH) =-.5V V G(TH) =+.V V G(TH) =+.8V GT-OURC VOTG (V) V G(TH) =-.4V V G(TH) =+.4V DRIN-OURC ON CURRNT (n). UBTHRHOD FORWRD TRNFR CHRCTRITIC V D =.V lop ~ = mv/dcad. V G(th) V G(th) V G(th) V G(th) V G(th) V G(th) GT-OURC VOTG (V) D485/D495 dvancd inar Dvics 5 of

6 TYPIC PRFORMNC CHRCTRITIC (cont.) DRIN OURC ON CURRNT (m) DRIN-OURC ON CURRNT (µ) 5 4 DRIN OURC ON CURRNT, BI CURRNT vs. MBINT TMPRTUR -55 C -5 C C 7 C 5 C VG(TH)- VG(TH) VG(TH)+ VG(TH)+ VG(TH)+ VG(TH)+4 GT ND DRIN OURC VOTG (VG = VD) (V) DRIN-OURC ON CURRNT vs. ON RITNC. VD =+V T = 5 C VG=-4.V to +5.4V V D =+.V.. ON RITNC (KΩ) V D =+5V V D =+V DRIN OURC ON CURRNT ( µ) GT OURC VOTG (V) 5 V G(TH) +4 V G(TH) + V G(TH) + V G(TH) + V G(TH) V G(TH) - DRIN OURC ON CURRNT, BI CURRNT vs. MBINT TMPRTUR Zro Tmpratur Cofficint (ZTC) 5 C - 5 C V G(TH) V G(TH) V G(TH) V G(TH) V G(TH) V G(TH) GT ND DRIN OURC VOTG (VG = VD) (V) GT OURC VOTG vs. DRIN OURC ON CURRNT V G D V D I D(ON) V D =.5V T = +5 C V D =.5V T = +5 C DRIN OURC ON CURRNT (µ) V D = 5V T = +5 C V D = 5V V D = R ON I D(ON) T = +5 C. DRIN OURC ON CURRNT (m) 5 4 DRIN OURC ON CURRNT vs. OUTPUT VOTG T = 5 C V D = +V V D = +5V V D = +V OFFT VOTG (mv) OFFT VOTG vs. MBINT TMPRTUR RPRNTTIV UNIT VG(TH) V G(TH) + VG(TH)+ V G(TH) + VG(TH)+4 VG(TH) OUTPUT VOTG (V) MBINT TMPRTUR ( C) GT KG CURRNT (p) GT KG CURRNT vs. MBINT TMPRTUR I G MBINT TMPRTUR ( C) GT OURC VOTG vs. ON - RITNC D V D. D485/D495 dvancd inar Dvics 6 of GT OURC VOTG (V) V G(TH) +4 V G(TH) + V G(TH) + V G(TH) + V G(TH) +5 C +5 C V G ON - RITNC (KΩ) I D(ON).V V D 5.V

7 TYPIC PRFORMNC CHRCTRITIC (cont.) DRIN- GT DIOD CONNCTD VOTG TMPCO (mv/ C ) DRIN - GT DIOD CONNCTD VOTG TMPCO vs. DRIN OURC ON CURRNT C T +5 C DRIN OURC ON CURRNT (µ) TRNCONDUCTNC ( mω - ) TRNFR CHRCTRITIC T = 5 C V D = +V VG(TH) =.V VG(TH) = +.V VG(TH) = -.4V VG(TH) = -.5V VG(TH) = -.V VG(TH) = +.4V VG(TH) = +.8V GT-OURC VOTG (V) GT-OURC VOTG - THRHOD VOTG (V) ZRO TMPRTUR COFFICINT CHRCTRITIC V G(TH) =-.5V VG(TH)=-.V, -.4V,.V, +.V, +.8V, +.4V DRIN-OURC ON VOTG (V) GT-OURC VOTG (V) UBTHRHOD CHRCTRITIC 5 C.5 V G(th) =.4V. 55 C VG(th) =.V -.5. DRIN -OURC CURRNT (n) TRNCONDUCTNC ( mω - ) TRNCONDUCTNC vs. DRIN-OURC ON CURRNT. T = 5 C V D = +V DRIN -OURC ON CURRNT(m) THRHOD VOTG (V) V t =.V THRHOD VOTG vs. MBINT TMPRTUR V D = +.V I D =. µ V t =.V MBINT TMPRTUR ( C) V t =.4V V t =.8V V t =.4V GT-OURC VOTG - THRHOD VOTG (V) V G - VG(th)... NORMIZD UBTHRHOD CHRCTRITIC RTIV GT THRHOD VOTG -. 5 C C DRIN-OURC CURRNT (n) V D =.V D485/D495 dvancd inar Dvics 7 of THRHOD VOTG (V) THRHOD VOTG vs. MBINT TMPRTUR V G(th) =.V V G(th) = -.4V V G(th) = -.V V G(th) = -.5V MBINT TMPRTUR ( O C) I D = +µ V D = +.V

8 OIC-6 PCKG DRWING 6 Pin Plastic OIC Packag Millimtrs Inchs Dim Min Max Min Max (45 ) C D D BC.5 BC H (45 ) H C D485/D495 dvancd inar Dvics 8 of

9 PDIP-6 PCKG DRWING 6 Pin Plastic DIP Packag Millimtrs Inchs Dim Min Max Min Max D c D c D485/D495 dvancd inar Dvics 9 of

10 OIC-8 PCKG DRWING 8 Pin Plastic OIC Packag Millimtrs Inchs (45 ) D Dim C D-8 Min Max Min Max BC.5 BC H (45 ) H C D485/D495 dvancd inar Dvics of

11 PDIP-8 PCKG DRWING 8 Pin Plastic DIP Packag Millimtrs Inchs Dim Min Max Min Max D c D c D485/D495 dvancd inar Dvics of

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY TM DVNCD INR DVICS, INC. QUD/DU N-CHNN NHNCMNT MOD PD PRCISION MTCHD PIR MOSFT RRY PD D84/D94 N B D VGS(th)= +.4V GNR DSCRIPTION D84/D94 ar high prcision monolithic quad/dual nhancmnt mod N-Channl MOSFTS

More information

PRECISION P-CHANNEL EPAD MOSFET ARRAY QUAD ZERO THRESHOLD MATCHED PAIR

PRECISION P-CHANNEL EPAD MOSFET ARRAY QUAD ZERO THRESHOLD MATCHED PAIR TM DVNCED LINER DEVICES, INC. PRECISION P-CHNNEL EPD MOSFET RRY QUD ZERO THRESHOLD MTCHED PIR EPD E N B L E D LD37/LD37 VGS(th)=.V GENERL DESCRIPTION LD37/LD37 high prcision monolithic quad P-Channl MOSFET

More information

QUAD PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER

QUAD PRECISION CMOS VOLTAGE COMPARATOR WITH PUSH-PULL DRIVER DVNCD INR DVICS, INC. D43/D43 QUD PRCISION CMOS VOTG COMPRTOR WITH PUSHPU DRIVR GNR DSCRIPTION Th D43/D43 is a monolithic high prformanc quad voltag comparator uilt with advancd silicon gat CMOS tchnology.

More information

QUAD PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER

QUAD PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER DVNCD INR DVICS, INC. D433/D433 QUD PRCISION MICROPOWR CMOS VOTG COMPRTOR WITH DRIVR GNR DSCRIPTION Th D433/D433 is a prcision monolithic high prformanc quad voltag comparator with opn drain output uilt

More information

ALD810020/ALD QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB ) MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. FEATURES & BENEFITS GENERAL DESCRIPTION

ALD810020/ALD QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB ) MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. FEATURES & BENEFITS GENERAL DESCRIPTION TM DVND INR DVIS, IN. QUD/DU SUPRPITOR UTO BNING (SB ) MOSFT RRY PD N B D D810020/D910020 GNR DSRIPTION Th D810020/D910020 ar mmrs of th D8100xx (quad) and D9100xx (dual) family of Suprcapacitor uto Balancing

More information

ALD810023/ALD QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB ) MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION FEATURES & BENEFITS

ALD810023/ALD QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB ) MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION FEATURES & BENEFITS TM DVND INR DVIS, IN. QUD/DU SUPRPITOR UTO BNING (SB ) MOSFT RRY PD N B D D810023/D910023 GNR DSRIPTION Th D810023/D910023 ar mmrs of th D8100xx (quad) and D9100xx (dual) family of Suprcapacitor uto Balancing

More information

QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER

QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER DVNCD INR DVICS, INC. /B QUD 5V RI-TO-RI PRCISION OPRTION MPIFIR GNR DSCRIPTION Th /B/ is a quad monolithic prcision CMOS rail-to-rail oprational amplifir intndd for a road rang of analog applications

More information

QUAD PRECISION HIGH SPEED MICROPOWER TIMER

QUAD PRECISION HIGH SPEED MICROPOWER TIMER DVND IN DVI, IN. D50 QUD PIION HIGH PD MIOPOW TIM GN DIPTION Th D50 timr is a high prformanc QUD monolithic timing circuit uilt with advancd silicon gat MO tchnology. It offrs th nfits of high input impdanc,

More information

SINGLE/DUAL PRECISION HIGH SPEED MICROPOWER TIMER

SINGLE/DUAL PRECISION HIGH SPEED MICROPOWER TIMER VN IN VI, IN. 50/50 ING/U PIION HIGH P MIOPOW TIM GN IPTION Th 50/50 timrs ar high prformanc singl/dual monolithic timing circuits uilt with advancd silicon gat MO tchnology. Thy offr th nfits of high

More information

QUAD MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER

QUAD MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER DVNCD INR DVICS, INC. /B QUD MICROPOWR RITORI CMOS OPRTION MPIFIR GNR DSCRIPTION Th /B/ is a quad monolithic CMOS micropowr high slw rat oprational amplifir intndd for a road rang of analog applications

More information

PRECISION DUAL MICROPOWER CMOS OPERATIONAL AMPLIFIER

PRECISION DUAL MICROPOWER CMOS OPERATIONAL AMPLIFIER TM DVNCD INR DVICS, INC. PRCISION DU MICROPOWR CMOS OPRTION MPIFIR PD D2731/D2731 N B D GNR DSCRIPTION Th D2731/D2731 is a prcision dual lowcost highslwrat monolithic CMOS micropowr oprational amplifir

More information

MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER

MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER DVNCD INR DVICS, INC. D171/D171B MICROPOWR RITORI CMOS OPRTION MPIFIR GNR DSCRIPTION Th D171/D171B/ is a monolithic CMOS micropowr high slw rat oprational amplifir intndd for a road rang of analog applications

More information

PRECISION LOW POWER CMOS OPERATIONAL AMPLIFIER

PRECISION LOW POWER CMOS OPERATIONAL AMPLIFIER TM DVNCD INR DVICS, INC. PRCISION OW POWR CMOS OPRTION MPIFIR PD D1732/D1732 N B D GNR DSCRIPTION Th D1732/D1732 is a prcision low-cost low-powr monolithic CMOS oprational amplifir intndd for a road rang

More information

DUAL MICROPOWER PRECISION RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER

DUAL MICROPOWER PRECISION RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER DVNCD INR DVICS, INC. D2711/D2711B D2711 DU MICROPOWR PRCISION RITORI CMOS OPRTION MPIFIR GNR DSCRIPTION Th D2711/D2711B/D2711 is a dual monolithic CMOS micropowr prcision high slw rat oprational amplifir

More information

PRECISION MICROPOWER CMOS OPERATIONAL AMPLIFIER

PRECISION MICROPOWER CMOS OPERATIONAL AMPLIFIER TM DVNCD INR DVICS, INC. PD D1721/D1721G N B D PRCISION MICROPOWR CMOS OPRTION MPIFIR GNR DSCRIPTION Th D1721/D1721G is a monolithic CMOS micropowr high slw rat oprational amplifir intndd for a road rang

More information

PRECISION DUAL LOW POWER CMOS OPERATIONAL AMPLIFIER

PRECISION DUAL LOW POWER CMOS OPERATIONAL AMPLIFIER TM DVNCD INR DVICS, INC. PD D2732/D2732 N B D PRCISION DU OW POWR CMOS OPRTION MPIFIR GNR DSCRIPTION Th D2732/D2732 is a prcision dual lowcost lowpowr monolithic CMOS oprational amplifir intndd for a road

More information

RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER

RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER DVNCD INR DVICS, INC. D74/D74B RITORI CMOS OPRTION MPIFIR GNR DSCRIPTION Th D74/D74B/ is a CMOS monolithic oprational amplifir with MOSFT input that has railtorail input and output voltag rangs. Th input

More information

ALD2321A/ALD2321B/ALD2321 ULTRA LOW VOS EPAD DUAL CMOS ANALOG VOLTAGE COMPARATOR ADVANCED LINEAR DEVICES, INC.

ALD2321A/ALD2321B/ALD2321 ULTRA LOW VOS EPAD DUAL CMOS ANALOG VOLTAGE COMPARATOR ADVANCED LINEAR DEVICES, INC. DVNCED INER DEVICES, INC. D2321/D2321B/D2321 UTR OW VOS EPD DU CMOS NOG VOTGE COMPRTOR GENER DESCRIPTION Th D2321/D2321B/D2321 is a monolithic Prcision Dual Voltag Comparator, ach having intgratd dual

More information

3A High Current, Low Dropout Voltage Regulator Adjustable, Fast Response Time

3A High Current, Low Dropout Voltage Regulator Adjustable, Fast Response Time SPX29302 3 High Currnt, ow Dropout Voltag Rgulator djustabl, Fast Rspons Tim FTURS djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 ow Dropout Voltag of 370mV @ 3 xtrmly Fast Transint

More information

VIN AIC C OUT GND C IN. Low Dropout Linear Regulator

VIN AIC C OUT GND C IN. Low Dropout Linear Regulator 00m ow ropout inar Rgulator FTURS ow ropout Voltag of 470mV at 00m Output Currnt (.0V Output Vrsion). Guarantd 00m Output Currnt. ow Ground Currnt at 55µ. 2% ccuracy Output Voltag of 1.8V/ 2.0V /2.5V /2.7V/.0V/.V/.5V/.7V/.8V/

More information

SGM Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch

SGM Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch GENERAL DESCRIPTION Th SGM4717 is a dual, bidirctional, singl-pol/ doubl-throw (SPDT) CMOS analog switch dsignd to oprat from a singl 1.8V to 5.5V supply. It faturs high-bandwidth (300MHz) and low on-rsistanc

More information

AME. Shunt Bandgap Voltage Reference. General Description. Functional Block Diagram. Features. Typical Application. Applications

AME. Shunt Bandgap Voltage Reference. General Description. Functional Block Diagram. Features. Typical Application. Applications Gnral Dscription Th is a micropowr 2-trminal band-gap voltag rgulator diod. It oprats ovr a 30µA to 20mA currnt rang. Each circuit is trimmd at wafr sort to provid a ±0.50% and ±0.80% initial tolranc.

More information

Package: H: TO-252 P: TO-220 S: TO-263. Output Voltage : Blank = Adj 12 = 1.2V 15 = 1.5V 18 = 1.8V 25 = 2.5V 33 = 3.3V 50 = 5.0V 3.3V/3A.

Package: H: TO-252 P: TO-220 S: TO-263. Output Voltage : Blank = Adj 12 = 1.2V 15 = 1.5V 18 = 1.8V 25 = 2.5V 33 = 3.3V 50 = 5.0V 3.3V/3A. Faturs Advancd Powr 3-Trminal ustabl or Fixd.V,.5V,.8V,.5V, 3.3V or 5.V Output Maximum Dropout.4V at Full Load Currnt Fast Transint Rspons Built-in Thrmal Shutdown Output Currnt Limiting Good Nois Rjction

More information

3A High Current, Low Dropout Voltage Regulator

3A High Current, Low Dropout Voltage Regulator SPX29300/01/02/03 3 High Currnt, Low Dropout Voltag Rgulator djustabl & Fixd Output, Fast Rspons Tim FETURES djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 Low Dropout Voltag of 450mV

More information

N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options. 14-Lead QFN* 5.00x5.00mm body 1.00mm height (max) 1.

N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options. 14-Lead QFN* 5.00x5.00mm body 1.00mm height (max) 1. Suprtx inc. Faturs Vry low gat thrshold voltag Dsignd to b sourc-drivn Low switching losss Low ffctiv output capacitanc Dsignd for inductiv loads Wll matchd for low scond harmonic whn drivn by Suprtx M30

More information

CM431A LOW VOLTAGE ADJUSTABLE SHUNT REGULATOR

CM431A LOW VOLTAGE ADJUSTABLE SHUNT REGULATOR GNR SCRIPTION FTURS Th is a thr-trminal adjustal shunt voltag rgulator with spcifid thrmal staility and pin-to-pin compatil with th arlir 431 sris. Th output voltag can adjustd to any valu twn RF and 18

More information

ALD2724E/ALD2724 DUAL EPAD PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC.

ALD2724E/ALD2724 DUAL EPAD PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC. TM ADVANCED LINEAR DEVICES, INC. EPAD ALD2724E/ALD2724 E N A B L E D DUAL EPAD PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER KEY FEATURES Factory pr-trimmd V OS V OS =25µV @ I OS =.1pA 5V/µs slw

More information

SPX mA Low Drop Out Voltage Regulator with Shutdown FEATURES Output 3.3V, 5.0V, at 400mA Output Very Low Quiescent Current Low Dropout Voltage

SPX mA Low Drop Out Voltage Regulator with Shutdown FEATURES Output 3.3V, 5.0V, at 400mA Output Very Low Quiescent Current Low Dropout Voltage 400mA Low Drop Out Voltag Rgulator with Shutdown FEATURES Output 3.3V, 5.0V, at 400mA Output Vry Low Quiscnt Currnt Low Dropout Voltag Extrmly Tight Load and Lin Rgulation Vry Low Tmpratur Cofficint Currnt

More information

ALD2722E/ALD2722 DUAL EPAD LOW POWER CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC.

ALD2722E/ALD2722 DUAL EPAD LOW POWER CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC. TM ADVANCED LINEAR DEVICES, INC. EPAD ALD2722E/ALD2722 E N A B L E D DUAL EPAD LOW POWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES 5V singl supply opration EPAD (Elctrically Programmabl Analog Dvic) Usr

More information

FAN A, 1.2V Low Dropout Linear Regulator for VRM8.5. Features. Description. Applications. Typical Application.

FAN A, 1.2V Low Dropout Linear Regulator for VRM8.5. Features. Description. Applications. Typical Application. www.fairchildsmi.com 2.7A, 1.2V Low Dropout Linar Rgulator for VRM8.5 Faturs Fast transint rspons Low dropout voltag at up to 2.7A Load rgulation: 0.05% typical Trimmd currnt limit On-chip thrmal limiting

More information

1A Low Dropout Voltage Regulator Fixed Output, Fast Response

1A Low Dropout Voltage Regulator Fixed Output, Fast Response A Low Dropout Voltag Rgulator Fixd Output, Fast Rspons SPX3940 FEATURES % Output Accuracy SPX3940A Guarantd.5A Pak Currnt Low Quiscnt Currnt Low Dropout Voltag of 280mV at A Extrmly Tight Load and Lin

More information

SGM8621/2/3/4 250µA, 3MHz, Rail-to-Rail I/O CMOS Operational Amplifiers

SGM8621/2/3/4 250µA, 3MHz, Rail-to-Rail I/O CMOS Operational Amplifiers PRODUCT DESCRIPTION Th SGM86(singl), SGM86(dual), SGM86(singl with shutdown) and SGM864(quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.

More information

AP85T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

AP85T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. P85T3GH/J RoHS-compliant Product dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 6mΩ Fast Switching G I D 75 S Dscription Th TO-252

More information

Logic Design 2013/9/26. Outline. Implementation Technology. Transistor as a Switch. Transistor as a Switch. Transistor as a Switch

Logic Design 2013/9/26. Outline. Implementation Technology. Transistor as a Switch. Transistor as a Switch. Transistor as a Switch 3/9/6 Logic Dsign Implmntation Tchnology Outlin Implmntation o logic gats using transistors Programmabl logic dvics Compl Programmabl Logic Dvics (CPLD) Fild Programmabl Gat Arrays () Dynamic opration

More information

ALD1721E EPAD MICROPOWER CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC.

ALD1721E EPAD MICROPOWER CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC. TM ADVANCED LINEAR DEVICES, INC. EPAD ALD1721E E N A B L E D EPAD MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES EPAD (Elctrically Programmabl Analog Dvic) Usr programmabl V OS trimmr Computr-assistd

More information

SGM8631/2/3/4 470µA, 6MHz, Rail-to-Rail I/O CMOS Operational Amplifiers

SGM8631/2/3/4 470µA, 6MHz, Rail-to-Rail I/O CMOS Operational Amplifiers PRODUCT DESCRIPTION Th SGM86(singl), SGM86(dual), SGM86(singl with shutdown) and SGM864(quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.

More information

ALD2726E/ALD2726 DUAL EPAD ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC.

ALD2726E/ALD2726 DUAL EPAD ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC. TM ADVANCED LINEAR DEVICES, INC. EPAD ALD2726E/ALD2726 E N A B L E D DUAL EPAD ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER KEY FEATURES EPAD (Elctrically Programmabl Analog Dvic) Usr programmabl V OS trimmr

More information

Analog Integrations Corporation 4F, 9 Industry E. 9th Rd, Science-Based Industrial Park, Hsinchu, Taiwan DS-385B

Analog Integrations Corporation 4F, 9 Industry E. 9th Rd, Science-Based Industrial Park, Hsinchu, Taiwan DS-385B Adjustabl Micropowr Voltag Rfrnc FEATURES Adjustabl from.v to.v. Oprating urrnt from µa to ma. Low Tmpratur officint. % and % Initial Tolranc. Low Dynamic Impdanc. APPLIATIONS Portabl, BattryPowrd Equipmnt.

More information

SGM721/2/3/4 970µA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifiers

SGM721/2/3/4 970µA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifiers PRODUCT DESCRIPTION Th SGM7 (singl), SGM7 (dual), SGM7 (singl with shutdown) and SGM74 (quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.

More information

SGM8521/2/4 150kHz, 4.7µA, Rail-to-Rail I/O CMOS Operational Amplifiers

SGM8521/2/4 150kHz, 4.7µA, Rail-to-Rail I/O CMOS Operational Amplifiers // PRODUCT DESCRIPTION Th (singl),sgm8 (dual) and SGM8 (quad) ar rail-to-rail input and output voltag fdback amplifirs offring low cost. Thy hav a wid input common-mod voltag rang and output voltag swing,

More information

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 8mΩ Fast Switching I D 5 G S Dscription P5N3GH/J RoHS-compliant Product TO-252

More information

US6H23 / IMH23 V CEO 20V V EBO 12V. 600mA R k. Datasheet. Outline Parameter Tr1 and Tr2 TUMT6 SMT6

US6H23 / IMH23 V CEO 20V V EBO 12V. 600mA R k. Datasheet. Outline Parameter Tr1 and Tr2 TUMT6 SMT6 NPN 600m 20V Digital Transistors (Bias Rsistor Built-in Transistors) For Muting. Datasht Outlin Paramtr Tr1 and Tr2 TUMT6 SMT6 V CO 20V V BO 12V I C 600m R US6H23 1 4.7k IMH23 SOT-457 (SC-74) Faturs 1)

More information

Transient Voltage Suppressors / ESD Protectors

Transient Voltage Suppressors / ESD Protectors Transint Voltag Supprssors / ES Protctors PACN04/4/44/45/46 Faturs Two, thr, four, fiv, or six transint voltag supprssors Compact SMT packag savs board spac and facilitats layout in spac-critical applications

More information

RClamp2451ZA. Ultra Small RailClamp 1-Line, 24V ESD Protection

RClamp2451ZA. Ultra Small RailClamp 1-Line, 24V ESD Protection - RailClamp Dscription RailClamp TVS diods ar ultra low capacitanc dvics dsignd to protct snsitiv lctronics from damag or latch-up du to ESD, EFT, and EOS. Thy ar dsignd for us on high spd ports in applications

More information

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. dvancd Powr N-CHNNEL ENHNCEMENT MOE Elctronics Corp. POWER MOSFET Low On-rsistanc BV SS 4V Singl riv Rquirmnt R S(ON) mω Surfac Mount Packag I 32 scription dvancd Powr MOSFETs from PEC provid th dsignr

More information

Common Collector & Common Base Amplifier Circuits

Common Collector & Common Base Amplifier Circuits xprimnt (6): ommon ollctor & as Amplification ircuit xprimnt No. (6) ommon ollctor & ommon as Amplifir ircuits Study Objctiv: (1) To comput and masur th basic charactristics of & amplification. (2) To

More information

AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. P9T3GH/J RoHS-compliant Product dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Lowr On- rsistanc D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 4mΩ Fast Switching Charactristic G I D 75 S

More information

DTA123E series V CC I C(MAX.) R 1 R 2. 50V 100mA 2.2k 2.2k. Datasheet. PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

DTA123E series V CC I C(MAX.) R 1 R 2. 50V 100mA 2.2k 2.2k. Datasheet. PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) DT123 sris PNP -100m -50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Paramtr V CC I C(MX.) R 1 R 2 Valu 50V 100m 2.2k 2.2k Faturs 1) Built-In Biasing Rsistors, R 1 = R 2 = 2.2k. Outlin

More information

EMD3 / UMD3N / IMD3A V CC I C(MAX.) R 1 R 2. 50V 100mA. 10k. 10k. 50V 100mA. 10k. 10k. Datasheet

EMD3 / UMD3N / IMD3A V CC I C(MAX.) R 1 R 2. 50V 100mA. 10k. 10k. 50V 100mA. 10k. 10k. Datasheet NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu MT6 UMT6 V CC I C(MX.) Paramtr V CC I C(MX.) 50V 100m 10k 10k Valu 50V

More information

UMH8N / IMH8A V CEO I C R 1. 50V 100mA 10k. Datasheet. Outline. Inner circuit

UMH8N / IMH8A V CEO I C R 1. 50V 100mA 10k. Datasheet. Outline. Inner circuit NPN 100m 50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr V CO I C Tr1 and Tr2 50V 100m 10k UMT6 UMH8N SOT-363 (SC-88) SMT6 IMH8 SOT-457 (SC-74) Faturs 1) Built-In

More information

EMA5 / UMA5N / FMA5A. V CC -50V -100mA 2.2kW 47kW I C(MAX.) R 1 R 2. Datasheet

EMA5 / UMA5N / FMA5A. V CC -50V -100mA 2.2kW 47kW I C(MAX.) R 1 R 2. Datasheet M5 / UM5N / FM5 PNP -100m -50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Faturs Paramtr V CC -50V -100m 2.2kW 47kW I C(MX.) R 1 R 2 1) Built-In Biasing Rsistors. 2) Two DT123J

More information

DTD114GK V CEO I C R. 50V 500mA 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Outline Parameter Value SMT3

DTD114GK V CEO I C R. 50V 500mA 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Outline Parameter Value SMT3 NPN 500mA 50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu SMT3 V CEO I C R 50V 500mA 10kW Bas Emittr Collctor DTD114GK SOT-346 (SC-59) Faturs 1) Built-In Biasing

More information

PERFORMANCE CHARACTERISTICS OF EPAD PRECISION MATCHED PAIR MOSFET ARRAY

PERFORMANCE CHARACTERISTICS OF EPAD PRECISION MATCHED PAIR MOSFET ARRAY TM ADVANCED LINEAR DEVICES, INC. e EPAD E N A B L E D PERFORMANCE CHARACTERISTICS OF EPAD PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION ALDxx/ALD9xx/ALDxx/ALD9xx are high precision monolithic

More information

EMD4 / UMD4N V CC I C(MAX.) R 1 R 2. 50V 100mA. 47kW. V CC -50V -100mA 10kW. Datasheet

EMD4 / UMD4N V CC I C(MAX.) R 1 R 2. 50V 100mA. 47kW. V CC -50V -100mA 10kW. Datasheet NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu EMT6 UMT6 V CC I C(MAX.) R 1 R 2 50V 100mA 47kW 47kW (1) (2) (3) (6) (5) (4) EMD4 (SC-107C)

More information

ESX10-10x-DC24V-16A-E electronic circuit protector

ESX10-10x-DC24V-16A-E electronic circuit protector Dscription Th plug-in typ ESX10 lctronic circuit protctor slctivly disconncts DC 2 V load circuits by rsponding fastr than th switch mod powr supply to ovrload conditions. Th manual ON/ OFF switch on th

More information

SGM8051/2/4 SGM8053/5 250MHz, Rail-to-Rail Output CMOS Operational Amplifiers

SGM8051/2/4 SGM8053/5 250MHz, Rail-to-Rail Output CMOS Operational Amplifiers SGM8// SGM8/, Rail-to-Rail Output PRODUCT DESCRIPTION Th SGM8/(singl), SGM8/(dual), SGM8 (quad) ar rail-to-rail output voltag fdback amplifirs offring as of us and low cost. Thy hav bandwidth and slw rat

More information

HSMS-2823 RF mixer/detector diode

HSMS-2823 RF mixer/detector diode Products > RF Is/iscrts > Schottky iods > Surfac Mount > HSMS-282 HSMS-282 RF mixr/dtctor diod scription ifcycl status: ctiv Faturs Th HSMS-282x family of schottky diods ar th bst all-round choic for most

More information

AP4435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.

AP4435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. RoHS-compliant Product dvancd Powr P-CHNNEL ENHNCEMENT MOE Elctronics Corp. POWER MOSFET Simpl riv Rquirmnt BV SS -3V Lowr On-rsistanc R S(ON) 2mΩ Fast Switching Charactristic I -4 G scription S Th TO-252

More information

PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER MATCHED PAIR

PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER MATCHED PAIR TM ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER MATCHED PAIR e EPAD ALD194 E N A B L E D VGS(th)= +.4V GENERAL DESCRIPTION FEATURES & BENEFITS The ALD194

More information

AOZ8904 Ultra-Low Capacitance TVS Diode Array

AOZ8904 Ultra-Low Capacitance TVS Diode Array Ultra-Low Capacitanc TS Diod Array Gnral Dscription Th AOZ8904 is a transint voltag supprssor array dsignd to protct high spd data lins from lctro Static Discharg (SD) and lightning. This dvic incorporats

More information

Lab 12. Speed Control of a D.C. motor. Controller Design

Lab 12. Speed Control of a D.C. motor. Controller Design Lab. Spd Control of a D.C. motor Controllr Dsign Motor Spd Control Projct. Gnrat PWM wavform. Amplify th wavform to driv th motor 3. Masur motor spd 4. Masur motor paramtrs 5. Control spd with a PD controllr

More information

PTF GOLDMOS Field Effect Transistor 12 Watts, 1.99 GHz

PTF GOLDMOS Field Effect Transistor 12 Watts, 1.99 GHz 查询 PTF41 供应商 GOLDMOS Fild Effct Transistor Watts, 1.99 GHz Dscription Th is a watt GOLDMOS FET intndd for larg signal amplifir applications from 1. to 2. GHz. It oprats at 38% fficincy with db minimum

More information

PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR

PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR TM ADVANCED LINEAR DEVICES, INC. PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR e EPAD ALD18/ALD18A E N A B L E D VGS(th)= +.V GENERAL DESCRIPTION FEATURES & BENEFITS

More information

Bi-Directional N-Channel 20-V (D-S) MOSFET

Bi-Directional N-Channel 20-V (D-S) MOSFET Bi-Dirctional N-Channl -V (D-S) MOSFET Si9EDB PRODUCT SUMMARY V SS (V) R SS(on) (Ω) I SS (A). at V GS =.5 V 7.6 at V GS = 3.7 V 6..3 at V GS =.5 V 5.. at V GS =. V 5.5 FEATURES TrnchFET Powr MOSFET Ultra-Low

More information

3A High Current, Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response Time

3A High Current, Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response Time SPX29300/01/02/03 3 High Currnt, ow ropout Voltag Rgulator djustal & Fixd Output, Fast Rspons Tim FTURS djustal Output own To 1.25V 1% Output uray Output Currnt of 3 ow ropout Voltag of 450mV @ 3 xtrmly

More information

N-Channel 100 V (D-S) 175 C MOSFET

N-Channel 100 V (D-S) 175 C MOSFET N-Channl V (D-S) 75 C MOSFET SUMN-9 PRODUCT SUMMRY V DS (V) R DS(on) (Ω) ().95 at V GS = V a FETURES TrnchFET Powr MOSFET Nw Packag with Low Thrmal Rsistanc % R g Tstd D TO-263 G G D S Top Viw Ordring

More information

Theory and Proposed Method for Determining Large Signal Return Loss or Hot S22 for Power Amplifiers Using Phase Information

Theory and Proposed Method for Determining Large Signal Return Loss or Hot S22 for Power Amplifiers Using Phase Information Thory and Proposd Mthod for Dtrmining arg Signal Rturn oss or Hot S for Powr Amplifirs Using Phas Information Patrick Narain and Chandra Mohan (Skyworks Solutions, Inc.) Introduction: Powr amplifirs (s)

More information

YB mA, Low Power, High PSRR LDO Regulator

YB mA, Low Power, High PSRR LDO Regulator scription Th is a sris of ultra-low-nois, high PSRR, and low quiscnt currnt low dropout (O) linar rgulators with 2.0% output voltag accuracy. Th rgulators achiv a low 300m dropout at 300m load currnt of

More information

HSMP-482B RF power limiter diode

HSMP-482B RF power limiter diode Products > RF Is/iscrts > PIN iods > Surfac Mount > HSMP-482 HSMP-482 RF powr limitr diod scription ifcycl status: ctiv Faturs Th HSMP-482x family of low rsistanc PIN diods ar optimizd for switch applications

More information

CH 7. Synchronization Techniques for OFDM Systems

CH 7. Synchronization Techniques for OFDM Systems CH 7. Synchronization Tchnius for OFDM Systms 1 Contnts [1] Introduction Snsitivity to Phas Nois Snsitivity to Fruncy Offst Snsitivity to Timing Error Synchronization Using th Cyclic Extnsion l Tim synchronization

More information

2SA1579 / 2SA1514K. V CEO -120V -50mA I C. Datasheet. PNP -50mA -120V High-Voltage Amplifier Transistors. Outline

2SA1579 / 2SA1514K. V CEO -120V -50mA I C. Datasheet. PNP -50mA -120V High-Voltage Amplifier Transistors. Outline PNP -50mA 20V High-Voltag Amplifir Transistors Datasht Paramtr Valu V CEO 20V -50mA I C Outlin UMT3 SMT3 Collctor Bas Bas Emittr Emittr Collctor Faturs 1) High Brakdown Voltag (BV CEO = 20V) 2) Complmntary

More information

3G Evolution. OFDM Transmission. Outline. Chapter: Subcarriers in Time Domain. Outline

3G Evolution. OFDM Transmission. Outline. Chapter: Subcarriers in Time Domain. Outline Chaptr: 3G Evolution 4 OFDM Transmission Dpartmnt of Elctrical and Information Tchnology Johan Löfgrn 2009-03-19 3G Evolution - HSPA and LTE for Mobil Broadband 1 2009-03-19 3G Evolution - HSPA and LTE

More information

AIC1680. Ultra Low Power Voltage Detector FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION CIRCUIT

AIC1680. Ultra Low Power Voltage Detector FEATURES DESCRIPTION APPLICATIONS TYPICAL APPLICATION CIRCUIT Ultra Low Powr Voltag Dtctor FEATURES Ultra-Low Quiscnt Currnt..V to 0.0V Input Voltag Opration. Flxibl Dtction Voltag Stting 0.V Stp in th Rang of.v to.0v High Dtction Voltag Accuracy at ±.%. Built-In

More information

5A Low Dropout Positive Regulator

5A Low Dropout Positive Regulator 5 ow Dropout Positiv Rgulator FTURS Dropout Voltag.5V at 5 Output Currnt. Fast Transint Rspons. xtrmly Tight in and oad Rgulation. Currnt imiting and Thrmal Prottion. djustal Output Voltag or Fixd.5V,.8V,.5V,.V.

More information

IMP528 IMP528. High-Volt 220 V PP Driv. ive. Key Features. Applications. Block Diagram

IMP528 IMP528. High-Volt 220 V PP Driv. ive. Key Features. Applications. Block Diagram POWER POWER MANAGEMENT MANAGEMENT High-Volt oltag E amp p Driv ivr 220 V PP Driv iv Th is an Elctroluminscnt (E) lamp drivr with th four E lamp driving functions on-chip. Ths ar th switch-mod powr supply,

More information

WPCA AMEREN ESP. SEMINAR Understanding ESP Controls. By John Knapik. 2004, General Electric Company

WPCA AMEREN ESP. SEMINAR Understanding ESP Controls. By John Knapik. 2004, General Electric Company WPCA AMEREN ESP SEMINAR Undrstanding ESP Controls By John Knapik 2004, Gnral Elctric Company Efficincy vs. Spcific Corona Powr KNOW WHERE YOUR ESP RUNS ON THE CURVE 99.9 99.0 Collction Efficincy (Prcnt)

More information

90 and 180 Phase Shifter Using an Arbitrary Phase-Difference Coupled-line Structure

90 and 180 Phase Shifter Using an Arbitrary Phase-Difference Coupled-line Structure This articl has bn accptd and publishd on J-STAGE in advanc of copyditing. Contnt is final as prsntd. IEICE Elctronics Exprss, Vol.* No.*,*-* 90 and 80 Phas Shiftr Using an Arbitrary Phas-Diffrnc Coupld-lin

More information

V OUT 3.3V. V REF =V OUT -V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55µA (typ.)

V OUT 3.3V. V REF =V OUT -V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55µA (typ.) 5A Low Dropout Positiv Rgulator FEATURES Dropout Voltag.V at 5A Output Currnt. Fast Transint Rspons. Extrmly Tight Lin and Load Rgulation. Currnt Limiting and Thrmal Protction. Adjustabl Output Voltag

More information

V REF =V OUT - V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55 A (typ.) V OUT 3.3V. (Note1) 3.3V. (Note1)

V REF =V OUT - V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55 A (typ.) V OUT 3.3V. (Note1) 3.3V. (Note1) 800m ow Dropout Positiv Rgulator FTURS Dropout Voltag 1.V at 800m Output Currnt. Fast Transint Rspons. in Rgulation, typial at 0.015%. oad Rgulation, typial at 0.1%. Currnt imiting and Thrmal Prottion.

More information

N-Channel 40 V (D-S) MOSFET

N-Channel 40 V (D-S) MOSFET N-Channl 4 V (D-S) MOSFET SUM2N4-m7L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) MAX. I D (A) d Q g (TYP.) 4.7 at V GS = V 2.2 at V GS = 4.5 V 2 TO-263 Top Viw S D G 9 Ordring Information: SUM2N4-m7L-GE3 (Lad

More information

The entire devices are built in housings that are protected against liquids and dust without need to be installed in hazloc certified cabinets.

The entire devices are built in housings that are protected against liquids and dust without need to be installed in hazloc certified cabinets. Cod for typ of protction Typ cod -TX- altrn. altrn. II 3 (2/3) G Ex d ia mb na [ Gb] [ic] IIC T4 Gc II 3 (2/3) G Ex db b ia mb na [ ic] IIC T4 II 3 (2/3) D Ex ia tc [ Db] [ic] IIIC T80 C Dc IP66 II 3 (2/3)

More information

LNA IN GND GND GND GND IF OUT+ IF OUT- 7. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

LNA IN GND GND GND GND IF OUT+ IF OUT- 7. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT LOW NOISE AMPLIFIER/ RoHS Compliant & Pb-Fr Product Packag Styl: SOIC- Faturs Singl V to.v Powr Supply MHz to MHz Opration db Small Signal Gain.dB Cascadd Nois Figur.mA DC Currnt Consumption -dbm Input

More information

P-Channel 200-V (D-S) MOSFET

P-Channel 200-V (D-S) MOSFET Si79DN P-Channl -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -.5 at V GS = - V -.8.6 nc. at V GS = - 6.V -.6 PowrPAK -8 FEATURES Halogn-fr According to IEC 69-- Availabl TrnchFET

More information

Engineering 1620: High Frequency Effects in BJT Circuits an Introduction Especially for the Friday before Spring Break

Engineering 1620: High Frequency Effects in BJT Circuits an Introduction Especially for the Friday before Spring Break Enginring 162: High Frquncy Efcts in BJT ircuits an Introduction Espcially for th Friday bfor Spring Brak I hav prpard ths nots bcaus on th day bfor a major vacation brak som popl find it ncssary to lav

More information

4-20mA Current Transmitter with RTD EXCITATION AND LINEARIZATION

4-20mA Current Transmitter with RTD EXCITATION AND LINEARIZATION -ma Current Transmitter with RTD XCITATION AND LINARIZATION FATURS LSS THAN ±% TOTAL ADJUSTD RROR, C TO + C RTD XCITATION AND LINARIZATION TWO OR THR-WIR RTD OPRATION WID SUPPLY RANG: V to V HIGH PSR:

More information

V REF =V OUT - V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55 A (typ.) V OUT 3.3V. (Note1) 3.3V. (Note1)

V REF =V OUT - V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55 A (typ.) V OUT 3.3V. (Note1) 3.3V. (Note1) 1 ow ropout Positiv Rgulator FTURS ropout Voltag 1.V at 1 Output Currnt. Fast Transint Rspons. in Rgulation, typial at 0.015%. oad Rgulation, typial at 0.1% Currnt imiting and Thrmal Prottion. djustal

More information

Data Sheet. HSMS-2700, 2702, 270B, 270C High Performance Schottky Diode for Transient Suppression. Features. Description.

Data Sheet. HSMS-2700, 2702, 270B, 270C High Performance Schottky Diode for Transient Suppression. Features. Description. HSMS-2700, 2702, 270B, 270 High Prformanc Schottky iod for Transint Supprssion ata Sht scription Th HSMS-2700 sris of Schottky diods, commonly rfrrd to as clipping /clamping diods, ar optimal for circuit

More information

Using SigLab for Production Line Audio Test

Using SigLab for Production Line Audio Test APPLICATION NOTE Using SigLab for Production Lin Audio Tst SigLab is idal for charactrizing audio componnts. Both its input and output subsystms hav low nois, low distortion and low cross talk. SigLab's

More information

Product is End of Life FEATURES BENEFITS NC 4 COM 4 COM 1 NC 1

Product is End of Life FEATURES BENEFITS NC 4 COM 4 COM 1 NC 1 Product is End of Lif Low-Voltag, Low R ON, ual PT nalog Switch G3015 ESCRIPTION Th G3015 is a dual doubl-pol/doubl-throw monolithic CMOS analog switch dsignd for high prformanc switching of analog signals.

More information

GV60 VALORSTAT PLUS OPERATING INSTRUCTIONS. VALORSTAT PLUS GV60 Electronic Ignition Remote Control

GV60 VALORSTAT PLUS OPERATING INSTRUCTIONS. VALORSTAT PLUS GV60 Electronic Ignition Remote Control GV60 VALORSTAT PLUS OPERATING INSTRUCTIONS VALORSTAT PLUS GV60 Elctronic Ignition Rmot Control Valor modls using th ValorStat PLUS Rmot Control Portrait 530I Vogu 1300 Horizon 534I Linar L1 1500 Horizon

More information

Lecture 19: Common Emitter Amplifier with Emitter Degeneration.

Lecture 19: Common Emitter Amplifier with Emitter Degeneration. Whits, EE 320 Lctur 19 Pag 1 of 10 Lctur 19: Common Emittr Amplifir with Emittr Dgnration. W ll continu our discussion of th basic typs of BJT smallnal amplifirs by studying a variant of th CE amplifir

More information

CAT5116. Log-Taper, 100-Tap Digitally Programmable Potentiometer (DPP ) DESCRIPTION FEATURES APPLICATIONS FUNCTIONAL DIAGRAM

CAT5116. Log-Taper, 100-Tap Digitally Programmable Potentiometer (DPP ) DESCRIPTION FEATURES APPLICATIONS FUNCTIONAL DIAGRAM og-tapr, 100-Tap igitally Programmabl Potntiomtr (PP ) FTURS 100-position, log-tapr potntiomtr Non-volatil PROM wipr storag 10n ultra-low standby currnt Singl-supply opration: 2.5V 5.5V Incrmnt Up/own

More information

V REF =V OUT - V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55µA (typ.) V OUT 3.3V. (Note1) Adjustable Voltage Regulator 3.

V REF =V OUT - V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55µA (typ.) V OUT 3.3V. (Note1) Adjustable Voltage Regulator 3. 1 ow ropout Positiv Rgulator FTURS ropout Voltag 1.V at 1 Output Currnt. Fast Transint Rspons. in Rgulation, typial at 0.015%. oad Rgulation, typial at 0.1% Currnt imiting and Thrmal Prottion. djustal

More information

Switches- and Indicators. Switches Unlimited Contact: Phone: * Fax:

Switches- and Indicators. Switches Unlimited Contact: Phone: * Fax: Switchs- and Indicators Switchs Unlimitd Contact: sals@switchsunlimitd.com Phon: 800-221-0487 * Fax: 718-672-6370 www.switchsunlimitd.com Contnts Dscription... 3 Product Assmbly... 4 PCB Pushbuttons...

More information

The Trouton Rankine Experiment and the End of the FitzGerald Contraction

The Trouton Rankine Experiment and the End of the FitzGerald Contraction Th Trouton Rankin Exprimnt and th End of th FitzGrald Contraction Dr. Adrian Sfarti 1. Abstract Assuming that FitzGrald was right in his contraction hypothsis, Trouton sought for mor positiv vidnc of its

More information

Characteristics of BJT-2

Characteristics of BJT-2 PLEASE S HP://ENGNEERS.N/ ENGNEERS- ONSULANS LEURE NOES SERES ELERONS ENGNEERNG 1 YEAR UPU haractristics of J-2 Output haractristics for ommon Emittr configuration: h output charactristic for transistor

More information

Introduction to Digital Signal Processing

Introduction to Digital Signal Processing Chaptr Introduction to. Introduction.. Signal and Signal Procssing A signal is dfind as any physical quantity which varis with on or mor indpndnt variabls lik tim, spac. Mathmatically it can b rprsntd

More information

Agamem Microelectronics Inc.

Agamem Microelectronics Inc. OVRVIW Th is a BJT intgratd circuit using in srvo motor control applications. Th uilt-in voltag rgulator provids th with xtrmly stal output voltag. It also incorporats a linar on-shot and puls-width dmodulator

More information

P-Channel 150-V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET Si3437V P-Channl 50-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) - 50 0.75 at V GS = - 0 V -.4 0.79 at V GS = - 6 V -.3 TSOP-6 Top Viw 8 nc FEATURES Halogn-fr According to IEC 649--

More information

ABRIDGED DATA SHEET MAX4852 MAX4852H NC1 COM1 NO1 IN1 IN2 NC2 COM2 NO2. Maxim Integrated Products 1

ABRIDGED DATA SHEET MAX4852 MAX4852H NC1 COM1 NO1 IN1 IN2 NC2 COM2 NO2. Maxim Integrated Products 1 19-75; Rv 0; 7/0 ABRIDGED DATA SHEET Gnral Dscription Th family of dual SPDT (singl-pol/doubl-throw) switchs oprat from a singl +V to +5.5V supply and can handl signals gratr than th supply rail. Ths switchs

More information