MITSUBISHI SEMICONDUCTORS <HVIC> M63994P/FP HIGH VOLTAGE HALF BRIDGE DRIVER M63994P/FP
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1 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER DESCRIPTION is high voltage Power MOSFET and IGBT module driver for half bridge applications. FETURES FLOTING SUPPLY OLTGE...6 OUTPUT CURRENT...±5m SINGLE INPUT TYPE INTERNLLY SET DEDTIME HLF BRIDGE DRIER UNDEROLTGE LOCKOUT 8 LED DIP/8 LED SOP PIN CONFIGURTION (TOP IEW) CC 1 IN 2 GND 3 LO 8 B 7 HO 6 S 5 NC NC:NO CONNECTION PCKGE TYPE (8 Lead DIP/8 Lead SOP) PPLICTIONS MOSFET and IGBT inverter module driver for refrigerator, air-conditioner, washing machine, C-servomotor and general purpose. 8P 8P2S BLOCK DIGRM B PULSE GEN H LEEL SHIFT BS U INTER LOCK R Q R S HO S IN DED TIME CC U R Q CC LO DELY S GND
2 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER BSOLUTE MXIMUM RTINGS Symbol Parameter Conditions Ratings Unit B S High Side Floating Supply oltage.5~62 B 2 ~ B+.5 HO CC LO IN ds/dt Pt K q Rth(j-c) Tj Topr Tstg High Side Floating Supply Offset oltage High Side Output oltage Low Side Fixed Supply oltage Low Side Output oltage Logic Input oltage llowable Offset Supply oltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature On Board, Ta = 25 C On Board, Ta > 25 C S.5 ~ B+.5.5 ~ 2 S ~ CC+.5.5 ~ CC+.5 ±5 5(P)/.6(FP) 8.5(P)/6.(FP) (P)/5(FP) 2 ~ ~ +1 ~ +125 /ns W mw/ C C/W C C C RECOMMENDED OPERTING CONDITIONS B S CC IN Symbol Parameter High Side Floating Supply oltage High Side Floating Supply Offset oltage Low Side Fixed Supply oltage Logic Input oltage Test Conditions Limits Min. Typ. Max. S S CC Unit THERML DERTING FCTOR CHRCTERISTICS (BSOLUTE MXIMUM RTINGS) Power Dissipation Pt (W) Lead SOP On Board 8 Lead DIP mbient Temperature
3 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER ELECTRICL CHRCTERISTICS (Ta=25 C, CC=BS(=B S)=15, unless otherwise specified) IFS IBS ICC INH INL INHYS IINH IINL BSUR BSUT tbsu CCUR CCUT tccu OH OL IOH IOL ROH ROL tded tdlh tdhl tr tf Symbol Parameter Floating Supply Leakage Current BS standby Current CC standby Current High Level Input Threshold oltage Low Level Input Threshold oltage Input Hysteresis oltage High Level Input Bias Current Low Level Input Bias Current BS Supply U Reset oltage BS Supply U Trip oltage BS Supply Filter Time CC Supply U Reset oltage CC Supply U Trip oltage CC Supply Filter Time High Level Output oltage Low Level Output voltage Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance Deadtime LO Turn-off to HO Turn-on & HO Turn-off to LO Turn-on Output Turn-On Propagation Delay Output Turn-Off Propagation Delay Output Turn-On Rise Time Output Turn-On Fall Time B=S=6 IN=15 IN= Test conditions IO= IO= O=, PW<1µs O=15, PW<1µs IO=2m, ROH=(OH-O)/IO IO=2m, ROL=O/IO CL=1pF between LO(HO) GND(S) CL=1pF between LO(HO) GND(S) CL=1pF between LO(HO) GND(S) CL=1pF between LO(HO) GND(S) Limits Min. Typ. Max CL=1pF between LO(HO) GND(S).5.75 µs Unit µs µs Ω Ω µs µs ns ns INPUT/OUTPUT TIMING DIGRM IN 5% 5% tf tr 9% tf 9% tr HO 1% 1% LO 9% 9% 1% 1% tdhl(lo) tded(ho) tdhl(ho) tded(lo) tdlh(ho) tdlh(lo)
4 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER PERFORMNCE CURES.9 ICC-CC, IBS-BS 18 INH, INL-CC.7 ICC 16 1 INH ICC, IBS (m).6.5 IBS INH, INL () INL CC, BS () CC () 1. tdhl, tdlh-cc 1.1 tdead-cc tdhl, tdlh (µs) tdlh tdead (µs) CC () tdhl CC () 25 OH-CC. OL-CC OH () ILO=m OL () ILO=2m 5 ILO= 2m ILO= 2m.5 ILO=2m ILO=m CC () CC ()
5 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER 5 IFS-Ta ICC, IBS-Ta.7.6 IFS () ICC, IBS (m) ICC IBS CCUT, CCUR-Ta 12 INH, INL-Ta CCUT, CCUR () CCUR CCUT INH, INL () INH INL tdhl, tdlh-ta 1.6 tdead-ta tdhl, tdlh (µs) 1.2 tdlh tdead (µs) 1.2 tdhl
6 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER 16 OH-Ta 6 OL-Ta OH () 12 8 ILO=m ILO= 2m ILO= 2m OL () ILO=2m ILO=2m ILO=m
7 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER LOGIC SEQUENCE CC CCUTRIP CCURESET delay (tu) delay (tu) BS BSUTRIP BSURESET delay (tu) IN HO LO 1. INPUT/OUTPUT LOGIC : HO has positive logic with reference to IN. LO has negative logic with reference to IN. 2. LOGIC DURING U(CC, BS)ERROR Error Signal HO LO U error (CC) HO outputs L level as long as U error for CC is detected. HO responds to IN if CC exceeds CCURESET level. LO is locked at L level as long as U error for CC is detected. fter CC exceeds CCURESET level, the lock for LO is removed following an H state of the IN signal, and then LO responds to the input. U error (BS) HO is locked at L level as long as U error for BS is detected. fter BS exceeds BSURESET level, the lock for HO is removed following an L state of the IN signal, and then HO responds to the input. LO is independent of BS to respond to IN.
8 MITSUBISHI SEMICONDUCTORS <HIC> HIGH OLTGE HLF BRIDGE DRIER PCKGE OUTLINE 8P EIJ Package Code DIP8-P JEDEC Code Weight(g).5 Lead Material Cu lloy Plastic 8pin 3mil DIP 8 5 E e1 c 1 D SETING PLNE L b1 b e b2 2 1 Symbol Dimension in Millimeters Min Nom Max b.5.6 b b c D E e 2.5 e L P2S- EIJ Package Code SOP8-P JEDEC Code Weight(g).7 Lead Material Cu lloy Plastic 8pin 225mil SOP e b2 8 5 HE E I2 e1 Recommended Mount Pad b 1 D e y F L1 2 1 c Detail F L Symbol 1 2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters Min Nom Max
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