IR2122(S) CURRENT SENSING SINGLE CHANNEL DRIVER
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- Cori York
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1 Preliminary Data Sheet No. PD60130-K CURRENT SENSING SINGLE CHANNEL DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 3.3V, 5V and 15V input logic compatible lead indicates shutdown has occured Output out of phase with input Description The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts. Typical Connection Product Summary V OFFSET I O +/- V OUT V CSth t on/off (typ.) Packages 8-Lead PDIP IR2122(S) 600V max. 110 ma / 110 ma 10-20V 500 mv 250 & 200 ns 8-Lead SOIC (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. 1
2 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V B High Side Floating Supply Voltage V S High Side Floating Offset Voltage V B - 25 V B V HO High Side Floating Output Voltage V S V B V CC Logic Supply Voltage V V IN Logic Input Voltage -0.3 V CC V FLT Output Voltage -0.3 V CC V CS Current Sense Voltage V S V B dv s /dt Allowable Offset Supply Voltage Transient 50 V/ns P D Package Power T A +25 C (8 Lead DIP) 1.0 (8 Lead SOIC) R THJA Thermal Resistance, Junction to Ambient (8 Lead DIP) 125 (8 Lead SOIC) 200 T J Junction Temperature 150 T S Storage Temperature T L Lead Temperature (Soldering, 10 seconds) 300 W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V S offset rating is tested with all supplies biased at 15V differential. Symbol Definition Min. Max. Units V B High Side Floating Supply Voltage V S + 13 V S + 20 V S High Side Floating Offset Voltage Note V HO High Side Floating Output Voltage V S V B V CC Logic Supply Voltage V V IN Logic Input Voltage 0 V CC V FLT Output Voltage 0 V CC V CS Current Sense Signal Voltage V S V S + 5 T A Ambient Temperature C Note 1: Logic operational for V S of -5 to +600V. Logic state held for V S of -5V to -V BS. (Please refer to the Design Tip DT97-3 for more details). 2
3 Dynamic Electrical Characteristics V BIAS (V CC, V BS ) = 15V, C L = 1000 pf and T A = 25 C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol Definition Min. Typ. Max. Units Test Conditions t on Turn-On Propagation Delay 250 V S = 0V t off Turn-Off Propagation Delay 200 V S = 600V t r Turn-On Rise Time 250 C L = 1000 pf t f Turn-Off Fall Time 250 ns C L = 1000 pf t bl Start-Up Blanking Time t cs CS Shutdown Propagation Delay 350 t flt CS to Pull-Up Propagation Delay 450 Static Electrical Characteristics V BIAS (V CC, V BS ) = 15V and T A = 25 C unless otherwise specified. The V IN, V TH and I IN parameters are referenced to COM. The V O and I O parameters are referenced to V S. Symbol Definition Min. Typ. Max. Units Test Conditions V IH Logic 0 Input Voltage (OUT = LO) 3.0 V CC = 10V to 20V V IL Logic 1 Input Voltage (OUT = HI) 0.8 V V CC = 10V to 20V V CSTH+ CS Input Positive Going Threshold V CC = 10V to 20V V OH High Level Output Voltage, V BIAS - VO 100 IO = 0A V OL Low Level Output Voltage, VO 100 mv IO = 0A I LK Offset Supply Leakage Current 50 V B = V S = 600V I QBS Quiescent V BS Supply Current V IN = 0V or 5V I QCC Quiescent V CC Supply Current V IN = 0V or 5V I IN+ Logic 1 Input Bias Current µa V IN = 0V I IN- Logic 0 Input Bias Current 1.0 V IN = 5V I CS+ High CS Bias Current 1.0 V CS = 3V I CS- High CS Bias Current 1.0 V CS = 0V V BSUV+ V BS Supply Undervoltage Positive Going Threshold V BSUV- V BS Supply Undervoltage Negative Going V Threshold I O+ Output High Short Circuit Pulsed Current V O = 0V, V IN = 0V PW 10 µs ma I O- Output Low Short Circuit Pulsed Current V O = 15V, V IN = 5V PW 10 µs 3
4 Functional Block Diagram Lead Definitions Lead Symbol Description V CC IN COM V B HO V S CS Logic and gate drive supply Logic input for gate driver output (HO), out of phase with HO Indicates over-current shutdown has occurred, negative logic Logic ground High side floating supply High side gate drive output High side floating supply return Current sense input to current sense comparator Lead Assignments 8 Lead PDIP 8 Lead SOIC IR2122 IR2122S 4
5 5
6 Case outlines 8-Lead PDIP (MS-001AB) A E 6 6X D e B H 0.25 [.010] A 6.46 [.255] 3X 1.27 [.050] FOOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] DIM IN C HES MILLIMETERS MIN MAX MIN MAX A A b c D E e.050 BASIC 1.27 BASIC e1.025 BASIC BASIC H K L y e1 A C y K x 45 8X b A [.010] C A B 0.10 [.004] 8X L 7 8X c NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 8-Lead SOIC 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE (MS-012AA) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California Tel: (310) Data and specifications subject to change without notice. 2/2/
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