Low Power Low Offset Voltage Dual Comparators
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1 Low Power Low Offset ltage Dual Comparators Product Description The GS393 consists of two independent precision voltage comparators which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. These comparators also have a unique characteristic in that the input common-mode voltage range includes ground, even though operated from a single power supply voltage. The GS393 was designed to directly interface with TTL and CMOS. When operated from both plus and minus power supplies, the GS393 will directly interface with MOS logic where their low power drain is a distinct advantage over standard comparators. Features Wide supply ltage range: 2.V to 32V. Low supply current drain independent of supply voltage. Low input biasing current: 25 n typ. Low input offset current: 5 n typ. Low input offset voltage: 3 mv typ. Input common-mode voltage range includes GND. Differential input voltage range equal to the power supply voltage Low output saturation voltage. Output voltage compatible with TTL, MOS and CMOS logic. Block Diagram 1
2 Packages & Pin ssignments Output 1 8 Inverting Input Non-Inverting Input 2 3 B 7 6 Output B Inverting Input B Device GS393S GS393P Package SOP-8 DIP-8 GND 4 5 Non-Inverting Input B Ordering & Marking Information GS Brand Name GS P/N Package Code Package Code Pb Free Code GS 393 P F Part Number Lead Free Date Code GS393 P F YWLG GS Code Ordering Marking bsolute Maximum Ratings Parameter Symbol Value Unit Supply ltage V CC 36 V Differential Input ltage V IDR 36 V Input ltage V IN -.3V to 36 V Input Current I IN 2 m POWER DISSIPTION (Note 1) Molded DIP P D 78 mw Small Outline Package P D 51 mw Output Short-Circuit to GND I OS Continuous Operating Temperature Range T to 7 C Storage temperature Range T STG -65 to 15 C Junction to mbient DIP θ Thermo Resistance J SOP C/W Junction to Case DIP-8 42 θ Thermo Resistance JC SOP-8 22 C/W ESD Rating (HBM) ESD 2K V Note 1: For operating at high temperatures, the GS393 must be derated based on a 125 C maximum junction temperature and a thermal resistance of 17 C/W which applies for the device soldered in a PCB, operating in a still air ambient. The low bias dissipation and the ON-OFF characteristic of the outputs keeps the chip dissipation very small (P D 1mW), provided the output transistors are allowed to saturate. 2
3 Electrical Characteristics at specified free-air temperature, V CC=5V (unless otherwise noted) Parameter Symbol *Test conditions Min Typ Max Unit IO V/mV V IC = V ICR min, mv Full range 9 =1.4 V Input offset voltage V V CC = 5 V to 3V, Input offset current l IO =1.4 V Full range 15 n Input bias current I IB =1.4 V Full range -4 n **Common-mode 25 to V CC V input voltage range ICR - Full range to V CC - 2. V Large-signal differential voltage VD V CC = 15 V, =1.4V to 11.4 V, amplification R L 15 k to V CC High-level output V OH=5 V, V ID=1V, n l current OH V OH= 3V, V ID=1V Full range 1 µ Low-level output V voltage OL I OL = 4 m, V ID=-1V Full range 7 mv Low-level output current l OL V OL= 1.5V, V ID=-1V 25 6 m Supply current I CC R L = V CC = 5V = 3V Full range 2.5 m * Full range (MIN to MX), for the GS393 is to 7. ll characteristics are measured with zero common-mode input voltage unless otherwise specified. ** The voltage at either input or common-mode should not be allowed to go negative by more than.3v. The upper end of the common-mode voltage range is V CC -1.5V, but either or both inputs can go to 3V without damage. Switching Characteristics V CC=5V, T =25 C Parameter Test conditions Typ Unit Response time R L connected to 5V through 5.1 k, C L=15pF* (See Note 1) 1-mV input step with 5-mV overdrive 1.3 TTL-level input step.3 µs * C Lincludes probe and jig capacitance. Note 1: The response time specified is the interval between the input step function and the instant when the output crosses 1.4V. 3
4 Typical Performance Characteristics Supply Current Input Current 1. T=-55 C 8 I -Supply Current (m) T= C T=25 C T=7 C T=125 C RL= IN - Input Current (ndc) T=-55 C T= C T=125 C T=25 C T=7 C V -Supply ltage (VDC) Response Time for Various Input Overdrives Positive Transition V - Supply ltage (VDC) Response Time for Various Input Overdrives Negative Transition Output ltage (V) Input Over Drive =1 mv 5mV 2mV 5V DC Output ltage (V) mV 1mV 5.mV= Input Over Drive 5V DC 51K V IN - V O UT Input ltage VIN(mV) K V IN - V O UT T=25 C Input ltage VIN(mV) -5-1 T=25 C TIME(μsec) TIME(μsec) Output Saturation ltage VO Saturation ltage(vdc) Out of Saturation T=125 C T=-55 C T=25 C IO - Output Sink Current (m) 4
5 Typical pplication (V CC =5V) The GS393 dual comparators feature high gain, wide bandwidth characteristic. This gives the device oscillation tendencies if the outputs are capacitively coupled to the inputs via stray capacitance. This oscillation manifests itself during output transitions (V OL to V OH). To alleviate this situation, input resistors<1kω should be used. The addition of positive feedback (<1mV) is also recommended. It is good design practice to ground all unused pins. Differential input voltages may be larger than supply voltage without damaging the comparator s input. ltage is more negative than -.3V should not be used. Basic Comparator Driving CMOS V =5V VIN GS393 3.k VO CD4XX VREF Driving TTL Square-Wave Oscillator =5v 4.3k 75pF 1k SN74LSxx 1 Hz VOUT GS393 SN74LSxx Pulse Generator Crystal Controlled Oscillator 15k R1= D1* 2k 2.k *For large ratios of R1 / R2, D1 can be omitted R2= D2 1N914 8pF.1uF VOUT VOUT 15V 6 s 6 s 2k CRYSTL 1-1 khz t t1 t2 5
6 Typical pplication (Continue) Two-Decade High-Frequency VCO 5pF 3.k 7k 3k VC FREQUENCY CONTROL VOLTGE INPUT 1.1uF 2k 2k 5k 1 2.1uF 1 2 OUTPUT1 OUTPUT2 Non-Inverting Comparator with Hysteresis Inverting Comparator with Hysteresis VREF VIN 1k 3k VO VIN 3k 1M Output Strobing nd Gate 6.2k "" "1" 39k 3k.375V 1k f Q or Logic Gate without Pull-Up resistor Q STROBE INPUT B C 1k 6
7 Typical pplication (Continue) OR Gate Large Fan-in ND Gate ll diodes 1N914 "" "1" 2k 3k "" "1" 1k 3k.75V B C 1k 1k f D C B D4 D3 D2 D1 VO Limit Comparator (12V) Comparing Input ltages of Opposite Polarity VIN VREF HI 2Rs Rs 1k LMP 12 ESB VIN -VIN 2N2222 VREF LOW 2Rs 2N2222 ORing the Outputs Zero Crossing Detector (Single Power Supply) 3.k VIN 1N914 1k 2M One-Shot Multi-vibrator Bi-Stable Multi-vibrator 1pF 1k 51k 15k t 1N914.1uF V 1ms PW t t1 S R S 15V 1N914 R 7
8 Typical pplication (Continue) One-Shot Multi-vibrator with Input Lock Out Zero Crossing Detector 1M 56k 15k VIN 1pF VIN 24k 1M 62k - Comparator With a Negative Reference VIN -5V - Time Delay Generator R1 R3 R4 R11 R14 R8 3 R2 R5 R12 R15 R9 C1 2 R6 R13 R16 R1 1 R7 R1=1k,R2=1k,R3=15k,R4=2k,R5=51k,R6=51k,R7=51k,R8=1k,R9=1k R1=1k,R11=1M,R12=1M,R13=1M,R14=3k,R15=3k,R16=3k,C1=.1uF 8
9 Split-Supply pplications MOS CLOCK DRIVER 15V R1 R5 R6 R8 R1 R11 R2 R3 R7 MH25 B R4 C R9-15V R1=51k,R2=51k,R3=1k,R4=,R5=2k,R6=3.9k R7=8.2k,R8=2k,R9=6.8k,R1=2.4k,R11=2.4k C=5pF 9
10 Package Dimension SOP-8 PLSTIC PCKGE Globaltech Semiconductor D θ1 E1/2 E/2 θ2 R1 E1 E R GUGE PLNE PIN 1 MRKING e b θ1 h θ L2 2 c 1 Dimensions SYMBOL Millimeters Inches MIN MX MIN MX b b c D 4.9 (TYP).193 (TYP) E 6. (TYP).236 (TYP) E1 3.9 (TYP).154 (TYP) e 1.27 (TYP).5 (TYP) L L1 1.4 (TYP).41 (TYP) L2.25 (TYP).1 (TYP) R R h θ 8 8 θ θ
11 DIP-8 PLSTIC PCKGE Globaltech Semiconductor E 1/2 e G GUGE PLNE PIN 1 MRKING E1 c b2 ec D 2 E BSE PLNE 1 SETING PLNE L D1 1/2 LED 4 PLCES e b e eb b3 Dimensions SYMBOL Millimeters Inches MIN MX MIN MX b b b c D D E E e 2.54 (TYP).1 (TYP) e 7.62 (TYP).3 (TYP) eb ec L G.38 (TYP).15 (TYP) 11
12 NOTICE Information furnished is believed to be accurate and reliable. However Globaltech Semiconductor assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information without express written approval of Globaltech Semiconductor. (Revise Date:27/11/13 Version_1.) 12
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