NB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer
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1 2.5 V / 3.3 V / 5.0 V :4 lock Fanout Buffer Description The NB3L553 is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The NB3L553 specifically guarantees low output to output skew. Optimal design, layout and processing minimize skew within a device and from device to device. Features Input/Output lock Frequency up to 200 MHz Low Skew Outputs (35 ps), Typical RMS Phase Jitter (2 khz 20 MHz): 29 fs (Typical) Output goes to Three State Mode via OE Operating Range: V DD = V to 5.25 V 5 V Tolerant Input lock I LK Ideal for Networking locks Packaged in pin SOI Industrial Temperature Range These are Pb Free Devices I LK OE Q Q2 Q3 Q4 Figure. Block Diagram 3L553 L Y W MRKING DIGRMS* SOI D SUFFIX SE 75 = Specific Device ode = ssembly Location = Wafer Lot = Year = Work Week = Pb Free Package DFN MN SUFFIX SE 506 PINOUT DIGRM V DD OE 2 7 Q0 Q3 3 6 Q Q2 4 5 GND I LK 3L553 LYW 6P M 6P = Specific Device ode M = Date ode = Pb Free Package (Note: Microdot may be in either location) *For additional marking information, refer to pplication Note ND002/D. ORDERING INFORMTION Device Package Shipping NB3L553DG NB3L553DR2G SOI (Pb Free) SOI (Pb Free) 9 Units/Rail 2500/Tape & Reel NB3L553MNR4G* DFN (Pb Free) 000/Tape & Reel *ontact Sales Representative For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD0/D. Semiconductor omponents Industries, LL, 200 June, 200 Rev. 7 Publication Order Number: NB3L553/D
2 Table. OE, OUTPUT ENBLE FUNTION OE Function 0 Disable Enable Table 2. PIN DESRIPTION Pin # Name Type Description V DD Power Positive supply voltage (2.375 V to 5.25 V) 2 Q0 (LV)MOS/(LV)TTL Output lock Output 0 3 Q (LV)MOS/(LV)TTL Output lock Output 4 GND Power Negative supply voltage; onnect to ground, 0 V 5 I LK (LV)MOS Input lock Input. 5.0 V tolerant 6 Q2 (LV)MOS/(LV)TTL Output lock Output 2 7 Q3 (LV)MOS/(LV)TTL Output lock Output 3 OE (LV)TTL Input V DD for normal operation. Pin has no internal pullup or pull down resistor for open condition default. Use from to 0 kohms external resistor to force an open condition default state. EP Thermal Exposed Pad (DFN only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open. 2
3 Table 3. MXIMUM RTINGS Symbol Parameter ondition ondition 2 Rating Unit V DD Positive Power Supply GND = 0 V 6.0 V V I Input Voltage OE I LK GND = 0 V and V DD = V to 5.25 V GND 0.5 V I V DD GND 0.5 V I 5.75 V T Operating Temperature Range, Industrial 40 to +5 T stg Storage Temperature Range 65 to +50 J Thermal Resistance (Junction to mbient) 0 lfpm 500 lfpm SOI /W /W J Thermal Resistance (Junction to ase) (Note ) SOI 4 to 44 /W J Thermal Resistance (Junction to mbient) 0 lfpm 500 lfpm DFN DFN 29 4 /W /W J Thermal Resistance (Junction to ase) (Note ) DFN 35 to 40 /W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating onditions is not implied. Extended exposure to stresses above the Recommended Operating onditions may affect device reliability.. JEDE standard multilayer board 2S2P (2 signal, 2 power) Table 4. TTRIBUTES ESD Protection haracteristic Human Body Model Machine Model harged Device Model Value > 2 kv > 50 V > TBD kv Moisture Sensitivity, Indefinite Time Out of Drypack (Note 2) Level Flammability Rating Oxygen Index: 2 to 34 UL 94 code V 0.25 in Transistor ount Meets or Exceeds JEDE Standard EI/JESD7 I Latchup Test 53 Devices 2. For additional Moisture Sensitivity information, refer to pplication Note ND003/D. 3
4 Table 5. D HRTERISTIS (V DD = V to V, GND = 0 V, T = 40 to +5 ) (Note 3) Symbol haracteristic Min Typ Max Unit I DD Power Supply 35 MHz, No Load m V OH Output HIGH Voltage I OH = 6 m.7 V V OL Output LOW Voltage I OL = 6 m 0.4 V V IH, I LK Input HIGH Voltage, I LK (V DD 2) V V IL, I LK Input LOW Voltage, I LK (V DD 2) 0.5 V V IH, OE Input HIGH Voltage, OE. V DD V V IL, OE Input LOW Voltage, OE 0.7 V ZO Nominal Output Impedance 20 IN Input apacitance, I LK, OE 5.0 pf IOS Short ircuit urrent ± 2 m D HRTERISTIS (V DD = 3.5 V to 3.45 V, GND = 0 V, T = 40 to +5 ) (Note 3) Symbol haracteristic Min Typ Max Unit I DD Power Supply 35 MHz, No Load m V OH Output HIGH Voltage I OH = 25 m 2.4 V V OL Output LOW Voltage I OL = 25 m 0.4 V V OH Output HIGH Voltage I OH = 2 m (MOS level) V DD 0.4 V V IH, I LK Input HIGH Voltage, I LK (V DD 2) V V IL, I LK Input LOW Voltage, I LK (V DD 2) 0.7 V V IH, OE Input HIGH Voltage, OE 2.0 V DD V V IL, OE Input LOW Voltage, OE 0 0. V ZO Nominal Output Impedance 20 IN Input apacitance, OE 5.0 pf IOS Short ircuit urrent ± 50 m D HRTERISTIS (V DD = 4.75 V to 5.25 V, GND = 0 V, T = 40 to +5 ) (Note 3) Symbol haracteristic Min Typ Max Unit I DD Power Supply 35 MHz, No Load 45 5 m V OH Output HIGH Voltage I OH = 35 m 2.4 V V OL Output LOW Voltage I OL = 35 m 0.4 V V OH Output HIGH Voltage I OH = 2 m (MOS level) V DD 0.4 V V IH, I LK Input HIGH Voltage, I LK (V DD 2) V V IL, I LK Input LOW Voltage, I LK (V DD 2) V V IH, OE Input HIGH Voltage, OE 2.0 V DD V V IL, OE Input LOW Voltage, OE 0. V ZO Nominal Output Impedance 20 IN Input apacitance, OE 5.0 pf IOS Short ircuit urrent ± 0 m 4
5 Table 6. HRTERISTIS; V DD = 2.5 V 5% (V DD = V to V, GND = 0 V, T = 40 to +5 ) (Note 3) Symbol haracteristic Min Typ Max Unit f in Input Frequency 200 MHz t r /t f Output rise and fall times; 0. V to 2.0 V.0.5 ns t pd Propagation Delay, LK to Q n (Note 4) ns t skew Output to output skew; (Note 5) ps t skew Device to device skew, (Note 5) 500 ps HRTERISTIS; V DD = 3.3 V 5% (V DD = 3.5 V to 3.45 V, GND = 0 V, T = 40 to +5 ) (Note 3) Symbol haracteristic onditions Min Typ Max Unit f in Input Frequency 200 MHz t jitter ( ) RMS Phase Jitter (Integrated 2 khz 20 MHz) (See Figures 2 and 3) f carrier = 00 MHz fs t r /t f Output rise and fall times; 0. V to 2.0 V ns t pd Propagation Delay, LK to Q n (Note 4) ns t skew Output to output skew; (Note 5) ps t skew Device to device skew, (Note 5) 500 ps HRTERISTIS; V DD = 5.0 V 5% (V DD = 4.75 V to 5.25 V, GND = 0 V, T = 40 to +5 ) (Note 3) Symbol haracteristic Min Min Typ Max Unit f in Input Frequency 200 MHz t jitter ( ) RMS Phase Jitter (Integrated 2 khz 20 MHz) (See Figures 2 and 3) f carrier = 00 MHz 29 fs t r /t f Output rise and fall times; 0. V to 2.0 V ns t pd Propagation Delay, LK to Q n (Note 4) ns t skew Output to output skew; (Note 5) ps t skew Device to device skew, (Note 5) 500 ps 3. Outputs loaded with external R L = 33 series resistor and L = 5 pf to GND for proper operation. Duty cycle out = duty in. 0.0 F decoupling capacitor should be connected between V DD and GND. 4. Measured with rail to rail input clock 5. Measured on rising edges at V DD 2 between any two outputs with equal loading. 5
6 Figure 2. Phase Noise Plot at 00 MHz at an Operating Voltage of 3.3 V, Room Temperature The above plot captured using gilent E5052 shows dditive Phase Noise of the NB3L553 device measured with an input source generated by gilent E663B. The RMS phase jitter contributed by the device (integrated between 2 khz to 20 MHz; as shown in the shaded area) is fs (RMS Phase Jitter of the input source is fs and Output (DUT+Source) is 93.6 fs). Figure 3. Phase Noise Plot at 00 MHz at an Operating Voltage of 5 V, Room Temperature The above plot captured using gilent E5052 shows dditive Phase Noise of the NB3L553 device measured with an input source generated by gilent E663B. The RMS phase jitter contributed by the device (integrated between 2 khz to 20 MHz; as shown in the shaded area) is 29 fs (RMS Phase Jitter of the input source is fs and Output (DUT+Source) is 03.5 fs). 6
7 PKGE DIMENSIONS SOI NB SE ISSUE J X B Y 5 4 S 0.25 (0.00) M Y M K NOTES:. DIMENSIONING ND TOLERNING PER NSI Y4.5M, ONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ND B DO NOT INLUDE MOLD PROTRUSION. 4. MXIMUM MOLD PROTRUSION 0.5 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INLUDE DMBR PROTRUSION. LLOWBLE DMBR PROTRUSION SHLL BE 0.27 (0.005) TOTL IN EXESS OF THE D DIMENSION T MXIMUM MTERIL ONDITION THRU RE OBSOLETE. NEW STNDRD IS Z H G D 0.25 (0.00) M Z Y S X S SETING PLNE 0.0 (0.004) N X 45 M J MILLIMETERS INHES DIM MIN MX MIN MX B D G.27 BS BS H J K M 0 0 N S SOLDERING FOOTPRINT* SLE 6: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
8 PKGE DIMENSIONS DFN SE ISSUE D PIN ONE REFERENE D B NOTES:. DIMENSIONING ND TOLERNING PER SME Y4.5M, ONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b PPLIES TO PLTED TERMINL ND IS MESURED BETWEEN 0.25 ND 0.30 MM FROM TERMINL. 4. OPLNRITY PPLIES TO THE EXPOSED PD S WELL S THE TERMINLS. 2 X X 0.0 ÇÇÇ ÇÇÇ ÇÇÇ TOP VIEW E MILLIMETERS DIM MIN MX REF b D 2.00 BS D E 2.00 BS E e 0.50 BS K 0.20 L X SETING PLNE 0.0 SIDE VIEW (3) D2 e/2 4 X L e E2 K 5 X b B NOTE 3 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLITION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 563, Denver, olorado 027 US Phone: or Toll Free US/anada Fax: or Toll Free US/anada orderlit@onsemi.com N. merican Technical Support: Toll Free US/anada Europe, Middle East and frica Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NB3L553/D
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NCS2211. Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode
NS22 Low Distortion Audio Power Amplifier with Differential Output and Shutdown Mode Product Description The NS22 is a high performance, low distortion lass A/B audio amplifier. It is capable of delivering
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor
NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
MC3488A. Dual EIA 423/EIA 232D Line Driver
Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NSQA6V8AW5T2 Series Transient Voltage Suppressor
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MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems
MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxETG Series, SZMMSZxxxETG Series Zener Voltage Regulators mw SOD Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD package. These devices
NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NS5S1153 is a DPDT switch for combined true ground audio and USB 2.0 high speed data applications. It allows portable systems to
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
NCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability
USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
PCS3P8103A General Purpose Peak EMI Reduction IC
General Purpose Peak EMI Reduction IC Features Generates a 4x low EMI spread spectrum clock Input Frequency: 16.667MHz Output Frequency: 66.66MHz Tri-level frequency Deviation Selection: Down Spread, Center
12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM
NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
NCV1009ZG. 2.5 Volt Reference
V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
MC Micropower Undervoltage Sensing Circuits MICROPOWER UNDERVOLTAGE SENSING CIRCUITS SEMICONDUCTOR TECHNICAL DATA
Micropower Undervoltage Sensing ircuits The M33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended