IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
|
|
- Mitchell Whitehead
- 5 years ago
- Views:
Transcription
1 Preliminary Data Sheet No.PD G IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Description The IPS521/IPS521S are fully protected five terminal high side switch with built in short-circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7 o C below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Typical Connection Product Summary R ds(on) 80mW (max) V clamp 50V I Limit 10A Tshutdown 165 o C V open load 3V Truth Table Op. Conditions In Out Dg Normal H H H Normal L L L Open load H H H Open load L H H Over current H L (limiting) L Over current L L L Over-temperature H L (cycling) L Over-temperature L L L Available Package + 5v Output pull-up resistor + VCC 15K Status feedback Rdg Rin Logic signal Dg In Logic Gnd Logic Gnd control Load Vcc Out Load Gnd 5 Lead TO220 - IPS521 5 Lead SMD220 IPS521S 1
2 Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25 o C unless otherwise specified). Symbol Parameter Min. Max. Units Test Conditions V out Maximum output voltage Vcc-50 Vcc+0.3 V offset Maximum logic ground to load ground offset Vcc-50 Vcc+0.3 V in Maximum Input voltage Iin, max Maximum positive IN current ma Vdg Maximum diagnostic output voltage V Idg, max Maximum diagnostic output current ma Isd cont. Diode max. permanent current (1) (rth=62 o C/W) 2.2 Isd pulsed Diode max. pulsed current (1) 10 ESD1 Electrostatic discharge voltage (Human Body) 4000 C=100pF, R=1500W, V ESD2 Electrostatic discharge voltage (Machine Model) 500 C=200pF, R=0W, Pd Maximum power dissipation (1) (TC=25 o C) IPS (TC=25 o C) IPS521S 1.56 Tj max. Max. storage & operating junction temp Tlead Lead temperature (soldering 10 seconds) 300 V A W o C Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth 1 Thermal resistance junction to case 3 Rth 2 Thermal resistance junction ambient 62 Rth 1 Thermal resistance with standard footprint Rth 2 Thermal resistance with 1" square footprint Rth 3 Thermal resistance junction to case 3 o C/W TO-220 D 2 PAK (SMD220) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2
3 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vcc Continuous Vcc voltage VIH High level input voltage VIL Low level input voltage Iout Continuous output current Tamb=85 o C (Rth < 11 o C/W, Tj = 125 o C) IPS521 5 Iout Continuous output current Tamb=85 o C (Rth = 11 o C/W, Tj = 125 o C) IPS521S 5 Iout Continuous output current Tamb=85 o C (TAmbient = 85 o C, Tj = 125 o C, Rth = 60 o C/W) IPS521S - Stnd Footprint 2.3 Iout Continuous drain current Tamb=85 o C (TAmbient = 85 o C, Tj = 125 o C) IPS521 - TO220 free air 2.3 Rin Recommended resistor in series with IN pin Rdg Recommended resistor in series with DG pin Static Electrical Characteristics (Tj = 25 o C, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 25 o C Vin = 5V, Iout = o C Rds(on) ON state Vcc = 6V 65 (Vcc=6V) mw Vin = 5V, Iout = 2.5A Rds(on) ON state resistance Tj = 150 o C Vin = 5V, Iout = o C Vcc oper. Operating voltage range V clamp 1 Vcc to OUT clamp voltage Id = 10mA (see Fig.1 & 2) V V clamp 2 Vcc to OUT clamp voltage Id = Isd (see Fig.1 & 2) Vf Body diode forward voltage Id = 2.5A, Vin = 0V Icc off Supply current when OFF ma Vin = 0V, Vout = 0V Icc on Supply current when ON ma Vin = 5V Icc ac Ripple current when ON (AC RMS) 20 ma Vin = 5V Vdgl Low level diagnostic output voltage 0.15 V Idg = 1.6 ma Iol Output leakage current 50 Vout = 6V Iol Output leakage current 0 25 Vout = 0V ma Idg leakage Diagnostic output leakage current 10 Vdg = 5.5V Vih IN high threshold voltage Vil IN low threshold voltage V Iin, on On state IN positive current 70 ma Vin = 5V V A kw 3
4 Switching Electrical Characteristics Vcc = 14V, Resistive Load = 2.8W, T j = 25 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Tdon Turn-on delay time 10 Tr1 Rise time to Vout = Vcc - 5V 25 msec Tr2 Rise time to Vout = 90% of Vcc 130 See figure 3 dv/dt (on) Turn ON dv/dt 0.7 V/ms Eon Turn ON energy 2000 mj Tdoff Turn-off delay time 35 msec Tf Fall time to Vout = 10% of Vcc 25 See figure 4 dv/dt (off) Turn OFF dv/dt 0.9 V/ms Eoff Turn OFF energy 600 mj Tdiag Vout to Vdiag propagation delay tbd msec Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Ilim Internal current limit 10 A Vout = 0V Tsd+ Over-temp. positive going threshold 165 o C See fig. 2 Tsd- Over-temp. negative going threshold 158 o C See fig. 2 V sc Short-circuit detection voltage (3) 3 V See fig. 2 V open load Open load detection threshold 3 V (3) Referenced to Vcc 4
5 Functional Block Diagram All values are typical VCC Under voltage lock out 50V 62 V Over temperature 165 C Tj 158 C Charge pump 2.7 V IN 7 V 200 KW 2.2 V Level shift driver - DG 7 V Current limit + 10 A W 3 V + - Open load Short-circuit V GND VOUT Lead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out Lead - TO220 IPS521 5 Lead - D 2 PAK (SMD220) IPS521S Part Number 5
6 Case Outline 5 Lead - D 2 PAK (SMD220)
7 Case Outline 5 Lead - TO220 IRGB Tape & Reel 5 Lead - D 2 PAK (SMD220) /
8 T clamp Vin Vin 5 V 0 V Iout Ids Iout Ilim. limiting T shutdown cycling ( + Vcc ) Out 0 V V clamp T Tsd+ Tsd- ( see Appl. Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram Vin Vin Vcc 90% Vcc - 5 V 90% Vout dv/dt on Vout dv/dt off 10% 10% Td on Tr 1 Tr 2 Td off Tf Figure 3 - Switching times definition (turn-on) Figure 4 - Switching times definition (turn-off) 8
9 1.00E-03 Vin = 5 V (on state) Dg Vcc Out Vin IN Gnd L + 14 V E-04 Vout R 1.00E-05 Vin = 0 V (sleep mode) 5 v 0 v Rem : V load is negative during demagnetization Iout 1.00E Figure 5 - Active clamp test circuit Figure 6 - Icc (ma) Vs Vcc (V) % 140% 130% 120% % 100% 90% 80% % 60% Figure 7 - Rds(on) (mw) Vs Vcc (V) Figure 8 - Normalized Rds(on) Vs Tj ( o C) 9
10 Figure 9 - Rds(on) (mw) Vs Iout (A) Figure 10 - Max. Iout (A) Vs Load Inductance (uh) Rthja= 10 C/W Rthja= 20 C/W 5 Rthja= 40 C/W 5 1inch² footprint Rthja= 35 C/W Free air Std. footprint Rthja= 60 C/W Figure 11a - Max load current (A) Vs Tamb ( o C) IPS Figure 11b - Max load current (A) Vs Tamb ( o C) IPS521S
11 TO220 free air / SMD2210 Std footprint Rth = 5 C/W Figure 12 - Transient Thermal Impedance (oc/w) Vs Time (S) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California Tel: (310) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: IR ITALY: Via Liguria 49, Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: Data and specifications subject to change without notice. 9/20/
IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 60155-G IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp
More informationIPS031/IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary R ds(on)
Preliminary Data Sheet No.PD 5-G IPS3/IPS3S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
More informationIPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
Preliminary Data Sheet No.PD 644-G IPS5/IPS5S FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
More informationIPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6159-K FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback Open load detection
More informationIPS5751/IPS5751S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6197 IPS5751/IPS5751S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback
More informationIPS022G/IPS024G DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 69-G IPSG/IPSG DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
More informationIPS021L FULLY PROTECTED POWER MOSFET SWITCH
Preliminary Data Sheet No.PD 65-G IPSL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
More informationIPS7091(G)(S)PbF INTELLIGENT POWER HIGH SIDE SWITCH
Data sheet N 60291_C IPS7091(G)(S)PbF INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Active clamp Open load detection
More informationIPS6021(S)(R)PbF INTELLIGENT POWER HIGH SIDE SWITCH
Data sheet No. PD60280 IPS6021(S)(R)PbF INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection (turns
More informationIPS0151/IPS0151S FULLY PROTECTED POWER MOSFET SWITCH. Load
Data Sheet No.PD644H FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The are fully
More informationIPS031/IPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 5H FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The are fully
More informationIPS6041(G)(R)(S)PbF INTELLIGENT POWER HIGH SIDE SWITCH
Data sheet No. PD60282 INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection (turns On the MOSFET)
More informationIPS021S FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 648-K IPS(S) FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary
More informationIPS1031(S)(R)PbF INTELLIGENT POWER LOW SIDE SWITCH. Product Summary
Data Sheet No. PD60237 revd IPS1031(S)(R)PbF INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationIPS031S FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 65-J FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS3/IPS3S
More informationIPS2041(R)(L)PbF INTELLIGENT POWER LOW SIDE SWITCH. Product Summary
Data Sheet No. PD60297 IPS2041(R)(L)PbF INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationIPS1051LPbF / IPS1052GPbF
Data Sheet No. PD60298_B IPS1051LPbF / IPS1052GPbF SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level
More informationIPS022G/IPS024G DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 69-I DUAL/QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The
More informationINTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Data Sheet 60049- IR6220 (NOTE: For new designs, we recommend IR s new products IPS521 and IPS521S) INTEIGENT IG SIDE MOSFET POWER SWITC Features PWM current limit for short circuit protection Over-temperature
More informationAUIPS7081(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH. July, 17th, 2014 Automotive grade
July, 17th, 2014 Automotive grade AUIPS7081(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Active clamp Open load
More informationPROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH
Data Sheet No. PD60283 revb PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationIR3312(S) PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Data Sheet No.PD60211 rev.d IR3312(S) PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc
More informationIR3315(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH. Product Summary Rds(on) 20 mω max. Vcc op. 6 to 32V Current Ratio 2800 Prog. Ishutdown 3 to 30A
Data Sheet No. PD60285 IR3315(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationIRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
More informationIR3316(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH
Data Sheet No. PD60286_C IR3316(S)PbF LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses
More informationAUIPS6044G INTELLIGENT POWER HIGH SIDE SWITCH. Product Summary
December, 10th 2011 Automotive grade AUIPS6044G INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection
More informationIPS1051LPbF / IPS1052GPbF
Data Sheet No. PD60298_B SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationIRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.
PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
More informationIRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
More informationIR2106/IR21064 IR2107/IR21074 HIGH AND LOW SIDE DRIVER
Features Floating channel designed for bootstrap operation Fully operational to +00V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 0 to 0V Undervoltage lockout for both
More informationIRF V, N-CHANNEL
PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
More informationIPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 653-J IPS4G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description
More informationIPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH. Product Summary
Data Sheet No.PD 5-J SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The
More informationIPS024G QUAD FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD6 IPSG QUAD FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPSG
More informationAUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH. Features. Product Summary. Rds(on) 30m max. Vclamp 39V I Limit 32A Open load 3V / 1.1A.
Nk you Features September, 12th 2011 Automotive grade AUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationIPS0551T FULLY PROTECTED POWER MOSFET SWITCH. L oad. Product Summary
Data Sheet No. PD616-C FULLY PROTECTED POWER MOSFET SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The is a fully
More informationAUIPS7121R CURRENT SENSE HIGH SIDE SWITCH
August, 27th 2009 Automotive grade AUIPS7121R CURRENT SENSE HIGH SIDE SWITCH Features Suitable for 24V systems Over current shutdown Over temperature shutdown Current sensing Active clamp Optimized Turn
More informationIRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
More informationAUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH. Automotive grade
Automotive grade AUIPS6021(S)(R) INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection (turns On
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
More informationAUIPS6041(G)(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH. Product Summary
March, 12th 2012 Automotive grade AUIPS6041(G)(R)(S) INTELLIGENT POWER HIGH SIDE SWITCH Features Over temperature shutdown (with auto-restart) Short circuit protection (current limit) Reverse battery protection
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
More information1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationIR2153Z PD SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary
Features Floating channel designed for bootstrap operation Fully operational to +600 Tolerant to negative transient voltage d/dt immune Undervoltage lockout Programmable oscillator frequency 1 f = 1.4
More informationParameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
More informationSMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationPRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units
PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit
More informationAUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH
December, 9 th 2010 Automotive grade INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn
More informationIRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V.
INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs @ V CC = 720V, T J = 25 C, Combines low conduction losses with high switching speed Latest generation
More informationLOW EMI CURRENT SENSE HIGH SIDE SWITCH
Automotive grade AUIR3320S LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature
More informationHIGH AND LOW SIDE DRIVER. Product Summary VOFFSET VOUT. Description
Features n Floating channel designed for bootstrap operation Fully operational to +4V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
More informationLinear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
P- 93768A Si4435Y HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω escription These P-channel
More information40HF(R) SERIES 40 A STANDARD RECOVERY DIODES. Stud Version. Features. Typical Applications. Major Ratings and Characteristics
HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available A Types
More informationIR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK V T I TSM V RRM. 800 to 1600V < 16A = 300A. Bulletin I2135 rev.
IR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK Description/Features The 25TTS..FP IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
More informationAUIPS1021(S)(R) INTELLIGENT POWER LOW SIDE SWITCH. Product Summary
February, 28th 2011 Automotive grade AUIPS1021(S)(R) INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection
More informationIRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. UltraFast Co-Pack IGBT V CES = 600V. Features. V CE(on) typ. = 2.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 khz in hard switching, > 200 khz in resonant mode Generation 4 IGBT design
More informationAUIPS2051L/AUIPS2052G
May 9 th, 2012 Automotive grade AUIPS2051L/AUIPS2052G INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9790 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W-S Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
More informationIRG4PC40K Short Circuit Rated UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit
More informationIRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A
HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
More informationAUIR3317(S) LOW EMI CURRENT SENSE HIGH SIDE SWITCH
August, 25th 2011 Automotive grade LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Over current shutdown Active clamp ESD protection Input referenced to Vcc Over temperature shutdown
More informationAUIPS1011(S)(R) INTELLIGENT POWER LOW SIDE SWITCH
Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current Description The is a three
More informationFULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No. PD 60068-I FULLY PROTECTED POWER MOSFET SWITCH Features Controlled slew rate reduces EMI Over temperature protection with auto-restart Linear current-limit protection Active drain-to-source
More informationPROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH
December, 10th 2010 Automotive grade AUIR3313(S) PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced
More informationIRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
More informationAutomotive IPS. Low side AUIPS1025R INTELLIGENT POWER LOW SIDE SWITCH. Automotive grade
Automotive grade Automotive IPS Low side INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Up to 50kHz Logic level input ESD protection Description
More informationIR2153/IR2153D SELF-OSCILLATING HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connections
Features Integrated 600V halfbridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on C
More informationMaximum Power Dissipation W C
PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available
More informationIRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3.
PD -9580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs, V CC = 720V, T J = 25 C, Combines low conduction losses with high switching
More informationAUIPS1051L / AUIPS1052G
May, 9th 2012 Automotive grade SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection
More informationAUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH. Automotive grade. Product Summary
Automotive grade AUIPS2031R INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off
More informationAUIPS1041(L)(R)/AUIPS1042G
May, 9th 2012 Automotive grade AUIPS1041(L)(R)/AUIPS1042G SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationINTELLIGENT POWER LOW SIDE SWITCH
May 9 th 2012 Automotive grade AUIPS2041(R)(L) INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized
More informationSCHOTTKY RECTIFIER. Description/Features 2.38 (0.09) 2.19 (0.08) 1.14 (0.04) 0.89 (0.03) 0.58 (0.02) 0.46 (0.02) (0.41) 9.40 (0.
CWQ06FN SCHOTTKY ECTIFIE Amp D-Pak (TO-5AA) Major atings and Characteristics Characteristics CWQ06FN Units I F(AV) ectangular A waveform V M 60 V I FSM @ tp = 5 µs sine 30 A V F @ 6 Apk, T = 5 C J 0.57
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge
More informationIRG4PC50KD PD B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Short Circuit Rated UltraFast IGBT.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @25 C, V GE
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to
More informationAUIR3316(S) LOW EMI CURRENT SENSE HIGH SIDE SWITCH
November, 14th 2010 Automotive grade AUIR3316(S) LOW EMI CURRENT SENSE HIGH SIDE SWITCH Features Load current feedback Programmable over current shutdown Active clamp ESD protection Input referenced to
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
More informationIRF630N IRF630NS IRF630NL. HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.30Ω I D = 9.3A
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationSINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH
Automotive Grade AUIPS1051L / AUIPS1052G SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH Features Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9.629 PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD- 9788 IRG4PF5WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode Power Supply applications V CES = 9V Industry benchmark switching
More informationParameter Typ. Max. Units R qja Junction-to-Amb. (PCB Mount, steady state)* R qja Junction-to-Amb. (PCB Mount, steady state)** 48 60
PD - 91368B IRFL4310 HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paraeing Advanced Process Technoogy Utra Low On-Resistance Description Fifth Generation HEXFETs from Internationa
More informationSCHOTTKY RECTIFIER 30 V 3.65 (0.14 4) DIA (0.139) 5.30 (0.208) 5.50 (0.217) 4.50 (0.177) (2 PL C S.) 4.30 (0.170) 3.70 (0.145) 2.20 (0.
PD-20557 rev. B /99 SCHOTTKY ECTIFIE 72CPQ030 70 Amp TO-247AC Major atings and Characteristics Characteristics 72CPQ030 Units I F(AV) ectangular 70 A waveform V M 30 V I FSM @ tp = 5 µs sine 280 A V F
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationIRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A
PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
More informationParameter Maximum Units
l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
More informationIRFL110 V DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A SOT-223
PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
More informationIRG4BC20SD. Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop.4vtyp. @ A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,
More informationAUIPS7145R CURRENT SENSE HIGH SIDE SWITCH
February, 10 th 2012 Automotive grade AUIPS7145R CURRENT SENSE HIGH SIDE SWITCH Features Suitable for 24V systems Over current shutdown Over temperature shutdown Current sensing Active clamp Reverse circulation
More information