IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
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1 Preliminary Data Sheet No.PD G IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp E.S.D protection Status feedback Open load detection ogic ground isolated from power ground Description The IPS511/IPS511S are fully protected five terminal high side switch with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The overtemperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7 o C below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Typical Connection Product Summary R ds(on) 130mΩ (max) V clamp I imit Tshutdown V open load Truth Table Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Available Package 50V 5A 165 o C 3V Out (limiting) (cycling) Dg + 5v Output pull-up resistor + VCC 15K Status feedback Rdg Rin ogic signal Dg In ogic Gnd ogic Gnd control oad Vcc Out oad Gnd 5 ead TO220 IPS511 5 ead SMD220 IPS511S
2 Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25 o C unless otherwise specified). Symbol Parameter Min. Max. Units Test Conditions V out Maximum output voltage Vcc-50 Vcc+0.3 V offset Maximum logic ground to load ground offset Vcc-50 Vcc+0.3 V in Maximum Input voltage Iin, max. Maximum IN current ma Vdg Maximum diagnostic output voltage V Idg, max Maximum diagnostic output current ma Isd cont. Diode max. permanent current (1) 2.2 Isd pulsed Diode max. pulsed current (1) 10 ESD1 Electrostatic discharge voltage (uman Body) 4000 C=100pF, R=1500Ω, V ESD2 Electrostatic discharge voltage (Machine Model) 500 C=200pF, R=0Ω, Pd Maximum power dissipation (1) (TC=25 o C) IPS (rth=80 o C/W) IPS511S 1.56 Tj max. Max. storage & operating junction temp Tlead ead temperature (soldering 10 seconds) 300 V A W o C Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth 1 Thermal resistance junction to case 5 Rth 2 Thermal resistance junction to ambient 62 Rth 1 Thermal resistance with standard footprint Rth 2 Thermal resistance with 1" square footprint Rth 3 Thermal resistance junction to case 5 o C/W TO-220 D 2 PAK (SMD220) (1) imited by junction temperature (pulsed current limited also by internal wiring) 2
3 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vcc Continuous Vcc voltage VI igh level input voltage VI ow level input voltage Iout Continuous output current Tamb=85 o C (TAmbient = 85 o C, Tj = 125 o C, Rth < 30 o C/W) IPS (TAmbient = 85 o C, Tj = 125 o C, Rth = 60 o C/W) IPS511 free air 1.9 Rin Recommended resistor in series with IN pin Rdg Recommended resistor in series with DG pin V A kω Static Electrical Characteristics (Tj = 25 o C, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 25 o C Vin = 5V, Iout = o C Rds(on) ON state Vcc = 6V 110 (Vcc=6V) mω Vin = 5V, Iout = 1A Rds(on) ON state resistance Tj = 150 o C 190 Vin = 5V, Iout = o C Vcc oper. Operating voltage range V clamp 1 Vcc to OUT clamp voltage Id = 10mA (see Fig.1 & 2) V V clamp 2 Vcc to OUT clamp voltage Id = Isd (see Fig.1 & 2) Vf Body diode forward voltage Id = 2.5A, Vin = 0V Icc off Supply current when OFF µa Vin = 0V, Vout = 0V Icc on Supply current when ON ma Vin = 5V Icc ac Ripple current when ON (AC RMS) 20 µa Vin = 5V Vdgl ow level diagnostic output voltage 0.15 V Idg = 1.6 ma Ioh Output leakage current 50 Vout = 6V Iol Output leakage current 0 25 Vout = 0V µa Idg leakage Diagnostic output leakage current 10 Vdg = 5.5V Vih IN high threshold voltage Vil IN low threshold voltage V Iin, on On state IN positive current 70 µa Vin = 5V 3
4 Switching Electrical Characteristics Vcc = 14V, Resistive oad = 5.6Ω, T j = 25 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Tdon Turn-on delay time 10 Tr1 Rise time to Vout = Vcc - 5V 10 µs Tr2 Rise time to Vout = 90% of Vcc 40 See figure 3 dv/dt (on) Turn ON dv/dt 1.3 V/µs Eon Turn ON energy 400 µj Tdoff Turn-off delay time 15 µs Tf Fall time to Vout = 10% of Vcc 10 See figure 4 dv/dt (off) Turn OFF dv/dt 2 V/µs Eoff Turn OFF energy 300 µj Tdiag Vout to Vdiag propagation delay tbd µs Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Ilim Internal current limit 5 A Vout = 0V Tsd+ Over-temp. positive going threshold 165 C See fig. 2 Tsd- Over-temp. negative going threshold 158 o C See fig. 2 V sc Short-circuit detection voltage (3) 3 V See fig. 2 V open load Open load detection threshold 3 V (3) Referenced to Vcc 4
5 Functional Block Diagram All values are typical VCC Under voltage lock out 50V 62 V Over temperature 165 C Tj 158 C Charge pump 2.7 V IN 7 V 200 KΩ 2.2 V evel shift driver - DG 7 V Current limit + 5 A Ω 3 V + - Open load Short-circuit V GND VOUT ead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out ead - TO220 IPS511 Part Number 5 5 ead - D 2 PAK (SMD220) IPS511S
6 Case Outline 5 ead - D 2 PAK (SMD220)
7 Case Outline 5 ead - TO220 IRGB Tape & Reel 5 ead - D 2 PAK (SMD220) /
8 T clamp Vin Vin 5 V 0 V Iout Ids Iout Ilim. limiting T shutdown cycling ( + Vcc ) Out 0 V V clamp T Tsd+ Tsd- ( see Appl. Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram Vin Vin Vcc 90% Vcc - 5 V 90% Vout dv/dt on Vout dv/dt off 10% 10% Td on Tr 1 Tr 2 Td off Tf Figure 3 - Switching times definition (turn-on) Figure 4 - Switching times definition (turn-off) 8
9 1.00E-03 Vin IN Dg Vcc Out Vin = 5 V (on state) Gnd + 14 V E-04 5 v 0 v Vout R Iout 1.00E-05 Vin = 0 V (sleep mode) Rem : V load is negative during demagnetization 1.00E Figure 5 - Active clamp test circuit Figure 6 - Icc (ma) Vs Vcc (V) % 140% % 120% 110% % 90% 80% % 60% Figure 7 - Rds(on) (mω) Vs Vcc (V) Figure 8 - Normalized Rds(on) Vs Tj ( o C) 9
10 Figure 9 - Rds(on) (mω) Vs Iout (A) Figure 10 - Max. I out (A) Vs oad Inductance (u) 5 Rthja= 20 C/W Rthja= 10 C/W 5 4 Rthja= 40 C/W 4 1inch² footprint Rthja= 35 C/W Free air 2 Std. footprint Rthja= 60 C/W Figure 11a - Max load current (A) Vs Tamb ( o C) IPS511 Figure 11b - Max load current (A) Vs Tamb ( o C) IPS511S 10
11 Figure 12 - Transient Thermal Impedance ( o C/W) Vs Time (S) Figure 13 - Ilim (A) Vs Tj ( o C) WORD EADQUARTERS: 233 Kansas St., El Segundo, California Tel: (310) IR GREAT BRITAIN: urst Green, Oxted, Surrey R8 9BB, UK Tel: IR CANADA: 15 incoln Court, Brampton, Ontario 6T 3Z2 Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad omburg Tel: IR ITAY: Via iguria 49, Borgaro, Torino Tel: IR FAR EAST: K& Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: IR SOUTEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun aw South Road, Taipei, 10673, Taiwan Tel: Data and specifications subject to change without notice. 9/25/98 11
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