Low-Power, High-Speed CMOS Analog Switches
|
|
- Jesse Lindsey
- 6 years ago
- Views:
Transcription
1 G401, G403, G40 Low-Power, High-Speed MOS Analog Switches ESRIPTION The G401, G403, G40 monolithic analog switches were designed to provide precision, high performance switching of analog signals. ombining low power (0.3 µw, typ.) with high speed (t ON : 7 ns, typ.), the G401 series is ideally suited for portable and battery powered industrial and military applications. Built on the proprietary high-voltage silicon-gate process to achieve high voltage rating and superior switch on/off performance, break-before-make is guaranteed for the SPT configurations. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. Onresistance is very flat over the full ± 1 V analog range, rivaling JFET performance without the inherent dynamic range limitations. The three devices in this series are differentiated by the type of switch action as shown in the functional block diagrams. FEATURES 44 V supply max. rating ± 1 V analog signal range On-resistance - R S (on): 30 Ω Low leakage - I (on) : 40 pa Fast switching - t ON : 7 ns Ultra low power requirements - P : 0.3 µw TTL, MOS compatible Single supply capability ompliant to RoHS directive 2002/9/E BENEFITS Wide dynamic range Break-before-make switching action Simple interfacing APPLIATIONS Audio and video switching Sample-and-hold circuits Battery operation Test equipment ommunications systems PBX, PABX FUTIONAL BLOK IAGRAM AN PIN ONFIGURATION G401 ual-in-line and SOI S IN IN S 2 Key G401 L 1 S 1 IN Two SPST Switches per Package TRUTH TABLE Logic Switch 0 OFF 1 ON Logic "0" 0.8 V Logic "1" 2.4 V Top View 2 S 2 Top View IN 2 * Pb containing terminations are not RoHS compliant, exemptions may apply S Rev. I, 30-Nov-09 1
2 G401, G403, G40 FUTIONAL BLOK IAGRAM AN PIN ONFIGURATION G403 ual-in-line and SOI S IN S S IN S 2 Key 3 S 3 S G403 L 1 S 1 IN S 2 IN Two SPT Switches per Package TRUTH TABLE Logic SW 1, SW 2 SW 3, SW 4 0 OFF ON 1 ON OFF Logic "0" 0.8 V Logic "1" 2.4 V Top View Top View G40 G40 ual-in-line and SOI S IN S S IN S 2 Key 3 S 3 S L 1 S 1 IN Two PST Switches per Package TRUTH TABLE Logic "0" 0.8 V Logic "1" 2.4 V Logic Switch 0 OFF 1 ON 2 S 2 IN 2 Top View Top View 2 S Rev. I, 30-Nov-09
3 G401, G403, G40 ORERING INFORMATION Temp. Range Package Part Number G401 G403 G40-40 to 8-40 to 8-40 to 8 16-Pin Plastic IP 16-Pin Narrow SOI 16-Pin Plastic IP 16-Pin Narrow SOI 16-Pin Plastic IP 16-Pin Narrow SOI G401J G401J-E3 G401Y G401Y-T1 G401Y-E3 G401Y-T1-E3 G403J G403J-E3 G403Y G403Y-E3 G403Y-T1 G403Y-T1-E3 G40J G40J-E3 G40Y G40Y-E3 G40Y-T1 G40Y-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit to 44 to 2 ( - 0.3) to () V igital Inputs a () - 2 to () + 2, V S, V or 30 ma, whichever occurs first urrent (Any Terminal) ontinuous 30 urrent, S or (Pulsed 1 ms, % uty) 0 ma Storage Temperature (J, Y Suffix) - 6 to 12 Power issipation (Package) b 16-Pin Plastic IP c Pin SOI d 600 mw Notes: a. Signals on S X, X, or IN X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to P board. c. erate 6 mw/ above 7. d. erate 7.6 mw/ above 7. S Rev. I, 30-Nov-09 3
4 G401, G403, G40 SPEIFIATIONS a Test onditions Unless Specified = 1 V, = Suffix - 40 to 8 Parameter Symbol = V, V IN = 2.4 V, 0.8 V f Temp. b Typ. c Min. d Max. d Unit Analog Switch Analog Signal Range e V ANALOG Full V rain-source On-Resistance Δ rain-source On-Resistance Switch Off Leakage urrent R S(on) ΔR S(on) I S(off) I (off) I S = - ma, V = ± V = 13. V, = V I S = - ma, V = ± V, 0 V = 16. V, = V = 16. V, = V V = ± 1. V, V S = ± 1. V = 16. V, = V hannel On Leakage urrent I (on) V S = V = ± 1. V igital ontrol V Input urrent V IN Low I IN under test = 0.8 V IL All Other = 2.4 V V Input urrent V IN High I IN under test = 2.4 V IH All Other = 0.8 V ynamic haracteristics Turn-On Time t ON R L = 300 Ω, L = 3 pf See Figure 2 Break-Before-Make Time elay (G403) harge Injection Q L = nf V gen = 0 V, R gen = 0 Ω Off Isolation Reject Ratio OIRR R L = 0 Ω, L = pf f = 1 MHz Source Off apacitance S(off) f = 1 MHz, V S = 0 V Notes: a. Refer to PROESS OPTION FLOWHART. b. = 2, Full = as determined by the operating temperature suffix. c. Typical values are for ESIGN AI ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. Full Full Hot Hot Hot Full Full Turn-Off Time t OFF 30 0 t R L = 300 Ω, L = 3 pf 3 Ω na µa ns 60 p 72 hannel-to-hannel rosstalk X TALK rain Off apacitance (off) 12 hannel On apacitance, S(on) 39 Power Supplies Positive Supply urrent I+ Full Negative Supply urrent Logic Supply urrent I- I L = 16. V, = V Full V IN = 0 or V Full Ground urrent I Full db pf µa Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 4 S Rev. I, 30-Nov-09
5 G401, G403, G40 TYPIAL HARATERISTIS 2, unless otherwise noted = 1 V = -1 V 3 SW1, 2 2. (V) 4 SW3, 4 (V) 2 = 7 V V T 3 V TH = V Logic Supply (V) Input Switching Threshold vs. Logic Supply Voltage () Input Switching Threshold vs. Supply Voltages R S(on) - rain-source On-Resistance (Ω) = 1 V, = VL = V - 40 R S(on) - rain-source On-Resistance (Ω) T A = 2 ±6 V ± V ± 12 V ± 1 V ± 20 V ± 22 V V - rain Voltage (V) R S(on) vs. V and Temperature V - rain Voltage (V) R S(on) vs. V and Power Supply Voltage R S(on) - rain-source On-Resistance (Ω) T A = 2 7. V V 12 V 1 V 20 V 22 V Q (p) L = nf 0 pf 1 nf V - rain Voltage (V) R S(on) vs. V and Power Supply Voltage ( = 0 V) V S - Source Voltage (V) harge Injection vs. Analog Voltage S Rev. I, 30-Nov-09
6 G401, G403, G40 TYPIAL HARATERISTIS 2, unless otherwise noted 00p 0p = 1 V = -1 V = V V = ± 14 V I S (off) I (on) I (off) I S (off) I (off) I (on) (pa) I S, I p I (off) p Temperature ( ) Leakage urrent vs. Temperature V or V S - rain or Source Voltage (V) Leakage urrent vs. Analog Voltage 0 na 1 na = 1 V = = V I+ I V + = 1 V = = V t ON I+, I-, I L (A) 0 pa pa I L t ON, t OFF (ns) V S = V V S = V V S = - V t OFF 20 V S = - V t ON, t OFF (ns) 1 pa T A - Temperature ( ) Supply urrent vs. Temperature V S = - V V S = V V S = V V S = - V 0 ± ± ± 1 ± 20 ± 2, Positive and Negative Supplies (V) Switching Time vs. Power Supply Voltage* * Refer to Figure 2 for test conditions. t ON t OFF t ON, t OFF (ns) T A - Temperature ( ) Switching Time vs. Temperature* V V S = V V t ON - V t OFF 30 0 V Positive Supply (V) Switching Time vs. Positive Supply Voltage* 6 S Rev. I, 30-Nov-09
7 G401, G403, G40 TYPIAL HARATERISTIS 2, unless otherwise noted 0 ma ma 1 ma Supply urrent (A) 0 µa µa 1 µa 0 na na 0 1K K 0K 1M M Frequency (Hz) Supply urrent vs. Switching Frequency SHEMATI IAGRAM Typical hannel S V IN Level Shift/ rive V V Figure 1. S Rev. I, 30-Nov-09 7
8 G401, G403, G40 TEST IRUITS is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform. + V + 1 V Logic Input 0 V 0 % t f < 20 ns t f < 20 ns ± V S Switch Input* V S 90 % t OFF IN R L 1 kω L 3 pf Switch Output Switch Input* 0 V -V S t ON 90 % L (includes fixture and stray capacitance) R O = V S R L + r S(on) * V S = V for t ON, V S = - V for t OFF Note: Logic input waveform is inverted for switches that have the opposite logic sense control Figure 2. Switching Time V S1 V S2 + V + 1 V S 1 1 S 2 2 IN 2 R L1 L1 1 Logic Input Switch Output 3 V 0 V V S1 1 0 V V S2 2 0 % 90 % 90 % R L2 L2 Switch Output 0 V t t L (includes fixture and stray capacitance) Figure 3. Break-Before-Make + V + 1 V R g S Δ V g 3 V IN L nf IN On Off On Q = Δ x L Figure 4. harge Injection 8 S Rev. I, 30-Nov-09
9 G401, G403, G40 TEST IRUITS + V + 1 V + V + 1 V V S S 1 V S S R g = 0 Ω 0 Ω R g = 0 Ω 0 V, 2.4 V IN R L 0 Ω R L 0.8 V S 2 IN Off Isolation = 20 log = RF bypass V S X TALK Isolation = 20 log = RF bypass V S Figure. Off Isolation Figure 7. rosstalk + V + 1 V + V + 1 V V S R g = 0 Ω 0 V, 2.4 V S IN R L 0 Ω 0 V, 2.4 V IN S Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz = RF bypass Figure 6. Insertion Loss Figure 8. apacitances S Rev. I, 30-Nov-09 9
10 G401, G403, G40 APPLIATIONS + V + 1 V + V + 1 V Source 1 Left Right S 1 S Left e in S 1 S e out Left IN 1 IN 1 1 Source 2 Right S 2 S Right TTL Integrate/ Reset S 2 S TTL hannel Select IN 2 G403 Slope Select IN 2 G403 2 Figure 9. Stereo Source Selector Figure. ual Slope Integrator ual Slope Integrators: The G403 is well suited to configure a selectable slope integrator. One control signal selects the timing capacitor 1 or 2. Another one selects e in or discharges the capacitor in preparation for the next integration cycle. + V S V 1 Band-Pass Switched apacitor Filter: Single-pole double-throw switches are a common element for switched capacitor networks and filters. The fast switching times and low leakage of the G403 allow for higher clock rates and consequently higher filter operating frequencies. e in lock S 3 3 IN 1 S 2 2 S 4 4 IN 2 G e out Figure 11. Band-Pass Switched apacitor Filter S Rev. I, 30-Nov-09
11 G401, G403, G40 APPLIATIONS Peak etector: A 3 acting as a comparator provides the logic drive for operating SW 1. The output of A 2 is fed back to A 3 and compared to the analog input e in. If e in > e out the output of A 3 is high keeping SW 1 closed. This allows 1 to charge up to the analog input voltage. When e in goes below e out A 3 goes negative, turning SW 1 off. The system will therefore store the most positive analog input experienced. Reset SW 2 e in A1 + SW 1 R 1 + A 2 e out + A 3 G401 1 Figure 12. Positive Peak etector maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg? S Rev. I, 30-Nov-09 11
12 Package Information JEE Part Number: MS E im Min Max Min Max A A B E e 1.27 BS 0.00 BS H L EN: S Rev. F, 09-Jul-01 WG: 300 H All Leads e B A1 L 0.1 mm IN ocument Number: Jul-01 1
13 Package Information E 1 E S Q 1 A A 1 L B 1 e 1 B e A 1 MAX im Min Max Min Max A A B B E E e e A L Q S EN: S Rev., 09-Jul-01 WG: 482 ocument Number: Jul-01 1
14 Application Note 826 REOMMENE MINIMUM PAS FOR SO-16 REOMMENE MINIMUM PAS FOR SO (9.449) (1.194) APPLIATION NOTE (6.248) 0.12 (3.861) (0.9) 0.00 (1.270) (0.711) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: Revision: 21-Jan-08
15 Legal isclaimer Notice Vishay isclaimer ALL PROUT, PROUT SPEIFIATIONS AN ATA ARE SUBJET TO HANGE WITHOUT NOTIE TO IMPROVE RELIABILITY, FUTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VISHAY INTERTEHNOLOGY, I. ALL RIGHTS RESERVE Revision: 08-Feb-17 1 ocument Number: 900
16 Mouser Electronics Authorized istributor lick to View Pricing, Inventory, elivery & Lifecycle Information: Vishay: G403AK G40Y-E3 G40J-E3 G403Y-E3 G403J G403Y G40Y G40J G40AK G401J G403Y-T1 G403J-E3 G401J-E3 G403Y-T1-E3 G40Y-T1-E3 G40Y-T1 G401Y- T1-E3 G401Y-E3 G401Y
Low-Power, High-Speed CMOS Analog Switches
G401B, G403B, G405B Low-Power, High-peed MO Analog witches ERIPTION The G401B, G403B, G405B monolithic analog switches are replacements for the popular G401/403/405 analog switches and provide improved
More informationPrecision Monolithic Quad SPST CMOS Analog Switches
Precision Monolithic Quad PT MO Analog es ERIPTION The G4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. ombining low power
More informationPrecision Quad SPDT Analog Switch
Precision Quad SPDT Analog Switch DESCRIPTION The consist of four independently controlled single-pole double-throw analog switches. These monolithic switch is designed to control analog signals with a
More informationHigh-Speed, Low-Glitch D/CMOS Analog Switches
G6, G62, G63 High-Speed, Low-Glitch /CMOS Analog Switches ESCRIPTION The G6, G62, G63 feature high-speed lowcapacitance lateral MOS switches. Charge injection has been minimized to optimize performance
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG9411 DESCRIPTION The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low
More informationHigh-Speed Quad Monolithic SPST CMOS Analog Switch
DG27B High-Speed Quad Monolithic SPST CMOS Analog Switch DESCRIPTION The DG27B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage
More informationMonolithic Dual SPST CMOS Analog Switch
Monolithic Dual SPST CMOS Analog Switch DG00B DESCRIPTION The DG00B is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally
More informationLow-Voltage Single-Supply, SPDT Analog Switch in SC-70
Low-oltage Single-Supply, SPDT Analog Switch in SC-7 DESCRIPTION The DG499 is a cost effective upgrade to other types of 499 low-voltage, single-pole/double-throw analog switches available in the industry
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationDG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS
DG275, DG276 Low-Voltage, 0.4 R ON, Single SPST Analog Switch DESCRIPTION The DG275, DG276 are low voltage, single supply, dual SPST analog switches. Designed for high performance switching of analog signals,
More informationFEATURES APPLICATIONS. Switches are shown for a Logic 0 Input
2, Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches ESCRIPTION The G251, G252, and G253 are monolithic quad single-pole single-throw (SPST) analog switches that operate from
More informationImproved Quad CMOS Analog Switches
Improved Quad CMOS Analog Switches DESCRIPTION The analog switches are highly improved versions of the industry-standard DG2A, DG22. These devices are fabricated in proprietary silicon gate CMOS process,
More informationFEATURES APPLICATIONS
.7, Low On Resistance, + V, +5 V, +3 V, ± 5 V, SPST Switches DESCRIPTION The DG9E and DG9E are monolithic single-pole-single-throw (SPST) analog switches. The DG9E has a normally closed function. The DG9E
More informationLow-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability
Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability DG6, DG63 DESCRIPTION The DG6, DG63 is a low on-resistance, single-pole/ double-throw monolithic CMOS analog switch with negative
More informationLow Voltage, Dual SPDT Analog Switch with Charge Pump
Low Voltage, Dual SPDT Analog Switch with Charge Pump DG, DG, DG DESCRIPTION The DG, DG, DG are monolithic CMOS analog switching products designed for high performance switching of analog signals. Combining
More informationPower-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
Power-off Isolation,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single
More informationPower-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
Power-off Protection,,. V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for. V to 5.5 V operation with a single
More informationHigh-Speed Quad Monolithic SPST CMOS Analog Switch
High-Speed Quad Monolithic SPST CMOS Analog FEATURES BENEFITS APPLICATIONS Fast ing : 55 ns Low Charge Injection: 5 pc Low r DS(on) : 3 TTL/CMOS Compatible Low Leakage: pa Fast Settling Times Reduced ing
More information8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers ESCRIPTION The G48 is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a
More informationWideband/Video T Switches
Wideband/Video T Switches G540, G54, G542 ESCRIPTION The G540, G54, G542 are high performance monolithic wideband/video switches designed for switching RF, video and digital signals. By utilizing a "T"
More information0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch
.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch DESCRIPTION The is a compact, low resistance, ultra-low distortion double pole double throw (DPST) analog switch. The features a flat.39
More informationFEATURES BENEFITS APPLICATIONS. QFN-16 (4 mm x 4 mm) Top View GND 3
1.6 On Resistance, ± 5 V, +12 V, and +3 V Quad SPST Switches DESRIPTION The are monolithic quad singlepolesinglethrow analog switches. The G9424E and DG9425E differ only in that they respond to opposite
More informationN-Channel 150-V (D-S) MOSFET
Si4848Y N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).8 at V GS = V 3.7.9 at V GS = 6. V 3. FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs Compliant
More informationFEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number
Dual SPST Switches DG, DG8, DG9 DESCRIPTION The DG, DG8, and DG9 are low voltage, precision dual SPST switches that can be operated in a single supply or in a dual supply configuration power supply with
More informationDG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS
0.35-Ω Low-Voltage Dual SPDT Analog Switch DG2535/DG2536 DESCRIPTION The DG2535/DG2536 is a sub Ω (0.35 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG2535/DG2536 has
More information0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch
.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The DG2523 and DG2524 are four-channel single-pole double-throw (SPDT) analog switches. The DG2523 has two control inputs
More informationN-Channel 20 V (D-S) MOSFET
SiX N-hannel V (D-S) MOSFET PRODUT SUMMARY V DS (V) ( ) I D (ma) 5 at V GS =.5 V 7 at V GS =.5 V 75 9 at V GS =.8 V 5 at V GS =.5 V 5 S-89 S 6 D G 5 G Marking ode: L D S Top View Ordering Information:
More informationDG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.
1.5 On Resistance, ± 15 / +12 / ± 5, Quad SPST Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix
More informationSub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection
New Product DG/DG1 Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection DESCRIPTION The DG/DG1 are low-voltage single single-pole/ double-throw monolithic CMOS analog switches. Designed
More informationSingle 8-Ch/Differential 4-Ch CMOS Analog Multiplexers (Obsolete for non-hermetic. Use DG408/409 as pin-for-pin replacements.)
G58A_MIL/59A_MIL Single 8-Ch/ifferential -Ch CMOS Analog Multiplexers (Obsolete for non-hermetic. Use G8/9 as pin-for-pin replacements.) Low On-Resistance: 2 TTL and CMOS Logic Compatible Low Power: 3
More informationP-Channel 40 V (D-S) MOSFET
P-Channel 4 V (-S) MOSFET Si44FY 8 7 6 SO-8 Single 5 FEATURES TrenchFET Gen III p-channel power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationDual N-Channel 20 V (D-S) MOSFET
SiX Dual N-hannel V (D-S) MOSFET PRODUT SUMMARY V DS (V) R DS(on) ( ) I D (ma) S G D Ω.7 at V GS =. V 6.8 at V GS =. V. at V GS =.8 V SOT-6 S-89 Top View Ω Marking ode: Ordering Information: SiX-T-GE (Lead
More informationDG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS
High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch DESCRIPTION The DG2706 is a high speed, low voltage, low On-resistance, quad SPDT (single pole double throw) analog switch. It operates from a.6
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction
More informationN-Channel 20 V (D-S) MOSFET
SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A). at V GS =. V.9.7 at V GS =. V..9 at V GS =.8 V. SOT- SC-7 (-LEAS) FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power
More informationDG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS
High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer) DG2307 DESCRIPTION The DG2307 is a single-pole-double-throw switch/2:1 mux designed for 2 to 5.5 V applications. Using proprietary sub-micro CMOS
More informationDual SPDT Analog Switch
Dual SPDT Analog Switch DESCRIPTION The DG9236 is a CMOS, dual SPDT analog switch designed to operate from = 2.7 V to = 6 V max. operating, single supply. All control logic inputs have a guaranteed.8 V
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 6 R S(on) () at V GS = V.98 R S(on) () at V GS = 4.5 V.22 I (A) 2 Configuration Single SO-8 FEATURES TrenchFET Power MOSFET AEC-Q Qualified
More informationPrecision Monolithic Quad SPST CMOS Analog Switches
Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The are ± 15 precision monolithic quad single-pole single-throw (SPST) CMOS analog switches. Built on a new CMOS process, the ishay Siliconix
More information0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability
5, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability DESCRIPTION The is a dual SPDT low on-resistance switch designed to from a single 1.6 V to 5.5 V power supply. It is a bi-directional
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =
More informationDG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES
High-Speed, Low r ON, SPDT Analog Switch (2:1 Multiplexer/Demultiplexer Bus Switch) DG3157 DESCRIPTION The DG3157 is a high-speed single-pole double-throw, low power, TTL-Compatible bus switch. Using sub-micro
More informationFEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V )
DESCRIPTION www.vishay.com.5, High Bandwidth, Dual SPDT Analog Switch The DGE is a low-voltage dual single-pole / double-throw monolithic CMOS analog switch. Designed to operate from. V to 5.5 V power
More informationCMOS Analog Switches (Obsolete for non-hermetic. Use DG304B Series as pin-for-pin replacements.)
DGA_MIL/A_MIL/A_MIL/A_MIL CMOS Analog Switches (Obsolete for non-hermetic. Use DGB Series as pin-for-pin replacements.) -V Input Range Fast Switching t ON : ns Low r DS(on) : Single Supply Operation CMOS
More informationPrecision Low-Voltage, Low-Glitch CMOS Analog Switches
DG942, DG9422 Precision Low-Voltage, Low-Glitch MOS Analog Switches DESRIPTION Using BiMOS wafer fabrication technology allows the DG942, DG9422 to operate on single and dual supplies. Designed for optimal
More information8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
G48, G49 8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers ESCRIPTION The G48 is an 8 channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined
More informationP-Channel 20 V (D-S) MOSFET
Si7655AN P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.).36 at V GS = - V - e - 2.8 at V GS = -.5 V - e 72 nc.9 at V GS = - 2.5 V - e PowerPAK 22-8S FEATURES TrenchFET
More informationPrecision Monolithic Quad SPST CMOS Analog Switches
Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining
More informationN-Channel 20-V (D-S) MOSFET
Si546U N-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) 2.5 at V GS = 4.5 V 2.7 at V GS = 2.5 V 2.2 at V GS =. V 2 PowerPAK ChipFET Single 7 6 5 S Bottom View Ordering Information:
More informationLow Power, High Voltage SPST Analog Switches
Low Power, High Voltage SPST Analog Switches DG67, DG68 DESCRIPTION The DG67 and DG68 are dual supply single-pole/singlethrow (SPST) switches. On resistance is max. and flatness is 2 max. over the specified
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET SiRA32P 6.5 mm Top View PROUCT SUMMARY PowerPAK SO-8 Single 8 5.5 mm 4 G Bottom View V S (V) 25 R S(on) max. () at V GS = V.2 R S(on) max. () at V GS = 4.5 V.83 Q g typ. (nc)
More informationN-Channel 190-V (D-S) MOSFET
New Product N-Channel 9-V (-S) MOSFET SiB452K PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) 2.4 at V GS = 4.5 V.5 9 2. at V GS = 2.5 V.48 2.3 nc. at V GS =.8 V.4 PowerPAK SC-75-L-Single FEATURES
More informationP-Channel 20 V (D-S) MOSFET
New Product SiEH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) G -. at V GS = -.5 V -.5 at V GS = -.5 V -. at V GS = -.8 V - SOT-6 SC-7 (6-LEAS) Top View 6 5 S.5 nc Part
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-S) MOSFET SiBEK PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V PowerPAK SC-75-L-Single 5. mm S S G. mm.5 nc Part # code Marking Code A X
More informationP-Channel 20 V (D-S) MOSFET
Si469H P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - SOT-363 SC-7 (6-LEAS).8 at V GS = - V -.7. at V GS = - 4.5 V -.7.55 at V GS = -.5 V -.7 5.5 nc FEATURES Halogen-free
More informationP-Channel 30 V (D-S) MOSFET
SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm
More informationN-Channel 30-V (D-S) MOSFET
SiL N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A).48 at V GS = V 4.7 at V GS = 4.5 V.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFET Compliant to RoHS
More informationP-Channel 1.2 V (G-S) MOSFET
Si99H P-Channel. V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 8.78 at V GS = -.5 V -..95 at V GS = -.5 V -..5 at V GS = -.8 V -..5 at V GS = -.5 V -.. at V GS = -. V -. b SOT-
More informationPrecision CMOS Analog Switches
Precision MO Analog witches G417, G418, G419 ERIPTION The G417, G418, G419 monolithic MO analog switches were designed to provide high performance switching of analog signals. ombining low power, low leakages,
More informationN-Channel 12 V (D-S) MOSFET
New Product SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) SOT-363 SC-7 (6-LEAS).6 at V GS =.5 V.3 at V GS =.5 V.36 at V GS =.8 V 6 7.5 nc FEATURES Halogen-free According
More informationN-Channel 60-V (D-S) MOSFET
Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-
More informationP-Channel 12-V (D-S) MOSFET
P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2.255 at V GS = -.5 V - 9 a.28 at V GS = - 3.7 V - 9 a.3 at V GS = - 2.5 V - 9 a. at V GS = -.8 V - 9 a.5 at V GS =
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET SQ7AENW PROUCT SUMMARY V S (V) R S(on) (Ω) at V GS = V.3 R S(on) (Ω) at V GS =.5 V.8 I (A) 8 Configuration Single PowerPAK -8W Single 5 7 8 FEATURES TrenchFET power
More information3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers
DG148E, DG149E 3.9, 8-Channel / Dual 4-Channel, ± 15, +12, ± 5 Precision Multiplexers DESCRIPTION The DG148E is a precision analog multiplexer comprising eight single-ended channels. The DG149E is a dual
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () I (A) b, c Q g (TYP.) 3.2 at V GS = V..24 at V GS = 4.5 V 9.2 PowerPAK SC-7-6L Single S 4 5 S 6 5.6 FEATURES TrenchFET power MOSFET Thermally
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET SiSH4N 3.3 mm Top View PowerPAK -8SH 3.3 mm.9 mm 5 6 7 8 4 G Bottom View 3 S S S FEATURES TrenchFET power MOSFET % R g and UIS tested Material categorization: for definitions
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V 2 R S(on) () at V GS = 4.5 V 5 I (A).7 Configuration Single Package SC-7 SOT-33 SC-7 Single ( leads) S 4 5 FEATURES
More informationN-Channel 100 V (D-S) MOSFET
SiAJ N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.).83 at V GS = V.3.3 at V GS =.5 V 9 PowerPAK SC-7-L-Single 5 2.5 mm S S 2 3 G 2.5 mm Bottom View Ordering Information:
More informationP-Channel 30 V (D-S) MOSFET
SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single
More informationPrecision 8-Channel/Dual 4-Channel CMOS Analog Multiplexers
G508B, G509B Precision 8-Channel/ual 4-Channel CMOS Analog Multiplexers ESCRIPTION The G508B is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () (MAX.) I (A) a Q g (TYP.) 3.84 at V GS = V 37.8.4 at V GS = 4.5 V 32.5 PowerPAK SC-7-6L Single S 4 5 6 8.2 nc FEATURES TrenchFET Gen IV power
More informationHigh-Speed, Low-Glitch D/CMOS Analog Switches
High-Speed, Low-Glitch /CMOS Analog Switches G/2/3 Fast Switching t ON : 2 ns Low Charge Injection: 2 pc Wide Bandwidth: MHz -V CMOS Logic Compatible Low r S(on) : 8 Low Quiescent Power :.2 nw Single Supply
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (-S) 75 C MOSFET SQ75AENW PROUCT SUMMARY V S (V) -6 R S(on) (Ω) at V GS = - V.65 R S(on) (Ω) at V GS = -.5 V.9 I (A) -6 Configuration Single Package PowerPAK -W PowerPAK -W Single
More informationP-Channel 12-V (D-S) MOSFET
i445y P-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).85 at V G = - 4.5 V - 4 -.5 at V G = -.5 V - 3.3 at V G = -.8 V - FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power
More informationP-Channel 150 V (D-S) MOSFET
P-Channel 5 V (-S) MOSFET Si4H PROUCT SUMMARY V S (V) R S(on) () I (A) Q g (TYP.) -5.6 at V GS = - V -.5.7 at V GS = -6 V -.5 6 SOT-363 SC-7 Single (6 leads) S 4 5 4. nc FEATURES TrenchFET power MOSFETS
More informationN- and P-Channel 2.5-V (G-S) MOSFET
N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) 25 R S(on) max. ( ) at V GS = V.73 R S(on) max. ( ) at V GS = 7.5 V.9 Q g typ. (nc) 8. I (A)
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 2.5 mm Top View Marking code: A5 PowerPAK SC-7-6L Single 2.5 mm S 4 S 7 5 6 2 3 G Bottom View FEATURES TrenchFET Gen IV power MOSFET Optimized Q g, Q gd, and Q gd /Q gs ratio
More informationP-Channel 20-V (D-S) MOSFET
SiB33EK P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 2.77 at V GS = - 2.5 V - 9 a 7. nc.58 at V GS = -.5 V - 9 a.5 at V GS = -.8 V - 5 PowerPAK SC-75-L-Single 5. mm S
More informationP-Channel 40-V (D-S) MOSFET
i44by P-Channel 4-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.).4 at V G = - V -. - 4 4. at V G = - 4. V - 8.7 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET
More informationP-Channel 20-V (D-S) MOSFET
Si33DS P-Channel 0-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.039 at V GS = - 4.5 V - 4.7-0 0.05 at V GS = -.5 V - 4. 0.068 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET 3.3 mm mm Top View PROUCT SUMMARY PowerPAK -8S 3.3 mm 3 4 S G Bottom View V S (V) 3 R S(on) max. () at V GS = V.48 R S(on) max. () at V GS = 4.5 V.6 Q g typ. (nc) 4 I (A) 5 a
More information700 MHz, -3 db Bandwidth; Single SPDT Analog Switch
7 MHz, -3 db Bandwidth; Single SPDT Analog Switch DESCRIPTION is a low R ON, high bandwidth analog switch configured in single SPDT. It achieves 5 switch on resistance, greater than 7 MHz -3 db bandwidth
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET SiS45NT 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) -2 R S(on) max. () at V GS = - V.4 R S(on) max. () at V GS = -4.5 V.55 R S(on) max.
More informationPrecision Low-Voltage, Low-Glitch CMOS Analog Switches
Precision LowVoltage, LowGlitch MOS Analog Switches DESRIPTION Using BiMOS wafer fabrication technology allows the to operate on single and dual supplies. Designed for optimal performance at single 5 V
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET Si44H PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (TYP.) 3.46 at V GS = 4.5 V 4.5 at V GS =.5 V 4.57 at V GS =.8 V 4 6 SOT-363 SC-7 Single (6 leads) S 4 5 5.7 nc FEATURES TrenchFET
More informationN-Channel 2.5-V (G-S) Battery Switch, ESD Protection
N-Channel.-V (G-S) Battery Switch, ESD Protection Si694AEDQ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).33 at V GS = 4. V 4.6 8.38 at V GS = 3. V 4.3.4 at V GS =. V 4. FEATURES Halogen-free Low R DS(on)
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC
More informationP-Channel 20-V (D-S) MOSFET with Schottky Diode
P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE
More informationFEATURES. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 25
N-Channel Reduced Q g, Fast witching MOFET i48by PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V 9 3.3 at V G = 4. V 7 FEATURE Halogen-free According to IEC 649-- Available TrenchFET Power MOFET High-Efficient
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 60 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 60 R S(on) (Ω) at V GS = 0 V 20 R S(on) (Ω) at V GS = 4.5 V 50 I (A).7 Configuration Single Package SC-70 6 SOT-363 SC-70 Single (6 leads)
More informationN- and P-Channel 20-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES
More informationP-Channel 1.8 V (G-S) MOSFET
Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G
More informationFEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721
.8 V to. V, Dual SPST Switches DG, DG, DG DESCRIPTION The DG, DG and DG are precision dual SPST switches designed to operate from single.8 V to. V power supply with low power dissipation. The DG, DG and
More informationAutomotive N-Channel 30 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET SQ47AEH PROUCT SUMMARY V S (V) R S(on) () at V GS = 4.5 V.65 R S(on) () at V GS =.5 V.95 I (A).7 Configuration Single FEATURES TrenchFET power MOSFET AEC-Q qualified
More informationDual P-Channel 60-V (D-S) 175 MOSFET
Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More information