IRF4905. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.02Ω I D = -74A. Thermal Resistance PD C
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1 l dvanced Process Technology l Ultra Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G P 9.280C HEXFET Power MOSFET S V SS = 55V R S(on) = 0.02Ω I = 74 The TO220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 TO220B contribute to its wide acceptance throughout the industry. bsolute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 74 T C = C Continuous rain Current, V V 52 I M Pulsed rain Current 260 C = 25 C Power issipation 200 W Linear erating Factor.3 W/ C V GS GatetoSource Voltage ± 20 V E S Single Pulse valanche Energy 930 mj I R valanche Current 38 E R Repetitive valanche Energy 20 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 screw lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.75 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θj Junctiontombient 62 8/25/97
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.05 V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance 0.02 Ω V GS = V, I = 38 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 2 S V S = 25V, I = 38 I SS raintosource Leakage Current 25 V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage V GS = 20V n GatetoSource Reverse Leakage V GS = 20V Q g Total Gate Charge 80 I = 38 Q gs GatetoSource Charge 32 nc V S = 44V Q gd Gatetorain ("Miller") Charge 86 V GS = V, See Fig. 6 and 3 t d(on) TurnOn elay Time 8 V = 28V t r Rise Time 99 I = 38 ns t d(off) TurnOff elay Time 6 R G = 2.5Ω t f Fall Time 96 R = 0.72Ω, See Fig. Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 3400 V GS = 0V C oss Output Capacitance 400 pf V S = 25V C rss Reverse Transfer Capacitance 640 ƒ =.0MHz, See Fig. 5 S Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 74 (Body iode) showing the I SM Pulsed Source Current integral reverse G 260 (Body iode) pn junction diode. S V S iode Forward Voltage.6 V T J = 25 C, I S = 38, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 38 Q rr Reverse RecoveryCharge µc di/dt = /µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =.3mH R G = 25Ω, I S = 38. (See Figure 2) ƒ I S 38, di/dt 270/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%.
3 I, raintosource Current () VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 4.5V I, raintosource Current () VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 4.5V 20µs PULSE WITH T c = 25 C 0. V S, raintosource Voltage (V) 20µs PULSE WITH T C = 75 C 0. V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintosource C urrent () T = 25 C J T = 75 C J V S = 2 5V 20µs PULSE W ITH V GS, GatetoSource Voltage (V) R S(on), raintos ource On Resistance (Normalized) I = 64 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature
4 C, Capacitance (pf) 7000 V GS = 0V, f = M Hz C iss = C gs C gd, C ds SHORTE 6000 C rss = C gd C oss = C ds C gd 5000 C is s 4000 C oss C rss 0 V S, raintosource Voltage (V) V GS, GatetoSource V oltage (V ) I = 38 V S = 44V V S = 28V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, R everse rain Current () T = 75 C J T = 25 C J I, rain C urrent () OPE RTION IN THIS RE LIMITE BY RS(on) µs ms ms V GS = 0V V S, Sourcetorain Voltage (V) T C = 25 C T J = 75 C Single Pulse V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea
5 80 V S R I, rain Current () R G V GS V Pulse Width µs uty Factor 0. %.U.T. Fig a. Switching Time Test Circuit V T C, Case Temperature ( C) V GS t d(on) t r t d(off) t f % Fig 9. Maximum rain Current Vs. Case Temperature 90% V S Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. = t 0.02 SINGLE PULSE t (THERML RESPONSE) Notes:. uty factor = t / t Peak T J = P M x Z thjc TC t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase
6 Fig 2a. Unclamped Inductive Test Circuit I S VS L R G.U.T V IS 20V RIVER tp 0.0Ω 5V E S, Single Pulse valanche Energy (mj) I TOP 6 27 BOT TOM Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. rain Current tp V (BR)SS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ V Q G 2V.2µF.3µF Q GS Q G.U.T. V S V G V GS 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak iode Recovery dv/dt Test Circuit.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer V GS R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test V * Reverse Polarity of.u.t for PChannel river Gate rive Period P.W. = P.W. Period [ V GS =V] ***.U.T. I S Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 4. For PChannel HEXFETS
8 Package Outline TO220B Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3) (.4 5) (.40 5) 3.78 (.4 9) 3.54 (.3 9) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.25 5) 6. 0 (.24 0) (.0 4 5) M IN LE SSIGNMENTS G TE 2 R IN 3 SOURCE 4 R IN 4.09 (.555) 3.47 (.530) (.6 0) (.4 0).40 (.055) 3X.5 (.045) 2.54 (.) 2X 3X 0.93 (.037) 0.69 (.027) (.0 4) M B M (.02 2) 3X (.0 8) 2.92 (.5) 2.64 (.4) NOTES: IM E N S IO N IN G & TO L ER N C IN G P ER N S I Y 4.5 M, O U TL IN E C O N FO R M S TO JE E C OU T LIN E TO 2 20 B. 2 CONTR OLLING IMENSION : INCH 4 HETSIN K & LE M ESUREMENTS O NOT INCLUE BU RRS. Part Marking Information TO220B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF WITH WITH SSEMBLY SSEMBLY LOT LOT COE COE 9BM 9BM INTERNTIONL RECTIFIER RECTIFIER IRF IRF LOGO LOGO B 9B M M SSEMBLY LOT LOT COE COE PRT PRT NUMBER NUMBER TE TE COE COE (YYWW) (YYWW) YY YY = YER = YER WW WW = WEEK = WEEK WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKi, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Building, Singapore 036 Tel: ata and specifications subject to change without notice. 8/97
9 This datasheet has been downloaded from: Free ownload aily Updated atabase % Free atasheet Search Site % Free IC Replacement Search Site Convenient Electronic ictionary Fast Search System ll atasheets Cannot Be Modified Without Permission Copyright Each Manufacturing Company
PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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l Logic-Level Gate rive l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs
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l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
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l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
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More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
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l l l l l Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET Surface Mount Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing
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l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
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l dvanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
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l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
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Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
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dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
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l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
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HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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SMPS MOSFET PD 980 IRFIB7N50 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg
More informationAbsolute Maximum Ratings
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationParameter Maximum Units
l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
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More informationAUTOMOTIVE GRADE A I DM P C = 25 C Power Dissipation 200 Linear Derating Factor. V/ns T J. Thermal Resistance Parameter Typ. Max.
UTOMOTIVE GRE P 96338 Features l dvanced Planar Technology l Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Repetitive valanche llowed up
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pplications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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P- 94087 IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V -6.2 70@V GS = -4.5V -5.0 escription
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More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
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HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
More informationHEXFET Power MOSFET V DS -20 V V GS max ±12 V. Top View. Orderable part number Package Type Standard Pack. IRLTS2242TRPbF TSOP-6 Tape and Reel 3000
P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
More informationIRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationV DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead g 20 C/W Junction-to-Ambient fg 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters Benefits l Very Low R S(on)
More informationSMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationS2 1 G2 2 G1 4. RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000
P 9766 HEXFET Power MOSFET V S 3 V R S(on) max (@V GS = V) 6.3 mω S2 G2 2 8 7 2 2 R S(on) max (@V GS = 4.5V) 23.8 mω Q g (typical) 9 nc I (@T = 25 C) S 3 G 4 6 5 SO8 9.2 pplications Charge and ischarge
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationIRF3205 PD D. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.008Ω I D = 110A
P - 9.1279 HEXFET Power MOSFET dvanced Process Technoogy Utra Low On-Resistance ynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationIRFU5305. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.065Ω I D = -31A. Description. Absolute Maximum Ratings. Thermal Resistance PD A
l Ultra Low OnResistance l Surface Mount (IRFR5305) l Straight Lead (IRFU5305) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from International
More informationSMPS MOSFET. V DSS Rds(on) max I D
SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
More informationIRF7240PbF HEXFET Power MOSFET
l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P- 95253 IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V -0.5 0.025@V GS = -4.5V
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
More informationD 2 Pak TO
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications l High frequency DCDC converters V DSS R DS(on) max I D 200V 0.040Ω 56A Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationIRF9530N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.20Ω I D = -14A
dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationIRF9953. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.25Ω PRELIMINARY
Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
More informationDescription. 1
dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF 8 7 6 4 5 HEXFET Power MOSFET P 9624 V SS =
More informationIRLMS1503. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationV DSS R DS(on) max I D. 20V GS = 10V 20A. 160 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters in Networking Systems l Lead-Free S S 2 IRF377PbF HEXFET Power MOSFET 8 7 P - 9579
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
More informationLinear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
P- 93768A Si4435Y HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω escription These P-channel
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
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