"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A

Transcription

1 "Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), A MTP PRODUCT SUMMARY V CES I C DC V CE(on) 6 V A.68 V FEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Al 2 O 3 DBC Very low stray inductance design for high speed operation UL approved file E78996 Speed 8 khz to 6 khz > 2 khz hard switching, > 2 khz resonant mode Compliant to RoHS Directive 22/95/EC Designed and qualified for industrial level BENEFITS Optimized for welding, UPS and SMPS applications Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V T C = 25 C Continuous collector current I C T C = 22 C 5 Pulsed collector current I CM 2 Peak switching current I LM 2 A Diode continuous forward current I F T C = C 48 Peak diode forward current I FM 2 Gate to emitter voltage V GE ± 2 RMS isolation voltage V ISOL Any terminal to case, t = minute 25 V Maximum power dissipation T C = 25 C 445 IGBT T C = C 75 P D T C = 25 C 25 Diode T C = C 83 W Revision: 7-Jun- Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

2 ELECTRICAL SPECIFICATIONS ( = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 25 μa V GE = 5 V, I C = 5 A Collector to emitter voltage V CE(on) V GE = 5 V, I C = A V GE = 5 V, I C = A, = 5 C V Gate threshold voltage V GE(th) I C =.5 ma 3-6 Diode reverse breakdown voltage V BR I R = 2 μa Temperature coefficient of threshold voltage V GE(th) / V CE = V GE, I C = 5 μa mv/ C Forward transconductance g fe V CE = 5 V, I C = A S V GE = V, V CE = 6 V Collector to emitter leaking current I CES V GE = V, V CE = 6 V, = 5 C Diode forward voltage drop V FM I F = A, V GE = V I F = A, V GE = V, = 5 C ma V Gate to emitter leakage current I GES V GE = ± 2 V - - ± 25 na SWITCHING CHARACTERISTICS ( = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g I C = A Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Q ge Q gc V CC = 48 V V GE = 5 V Turn-on switching loss E on V CC = 48 V, I C = 5 A, V GE = 5 V, Turn-off switching loss E off R g = 5, = 25 C, energy losses include tail and diode Total switching loss E ts reverse recovery Turn-on switching loss E on V CC = 48 V, I C = 5 A, V GE = 5 V, -..7 Turn-off switching loss E off R g = 5, = 25 C, energy losses include tail and diode Total switching loss E ts reverse recovery nc mj Input capacitance C ies V GE = V Output capacitance C oes V CC = 3 V Reverse transfer capacitance C res f =. MHz pf Diode junction capacitance C t V R = 6 V, f =. MHz Diode reverse recovery time t rr V CC = 48 V, I C = 5 A ns Diode peak reverse current I rr A Diode recovery charge Q rr di/dt = 2 A/μs R g = nc Diode peak rate of fall of recovery during t b di (rec)m /dt A/μs Revision: 7-Jun- 2 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

3 Load Current ( A ) THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R () T = 25 C k Sensitivity index of the thermistor material Notes () T, T are thermistor s temperatures R (2) = exp , temperature in Kelvin R T T ()(2) T = 25 C T = 85 C K THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Operating junction temperature range C Storage temperature range T Stg IGBT Junction to case R thjc Diode Case to sink per module R thcs Heatsink compound thermal conductivity = W/mK Mounting torque to heatsink ± % A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. C/W 3 Nm Weight 66 g 75 Duty cycle : 5% Tj Tsink = 9 C Power Dissipation = 92W f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental) Revision: 7-Jun- 3 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

4 I C, Collector-to-Emitter Current (A) V CE, Collector-to Emitter Voltage (V) I C Maximum DC Collector Current (A) 2 IC, Collector-to-Emitter Current (A) = 5 C Vge = 5V 38μs Pulse Width V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics T C Case Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature. 2 = 5 C.75 I C = A. I C = 5A I C = 25A V CC = 5V 2µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics , Junction Temperature ( C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Thermal Response ( Z thjc )... D = τ τ R R 2 R 3 R R 2 R 3 τ J? J τ 3? 2? 2? 3 Ci= τi/ri Ci i?ri τ C? Ri ( C/W) τi (sec) SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-5 E-6 E t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Revision: 7-Jun- 4 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

5 V GE, Gate-to-Emitter Voltage (V) Total Switching Losses (mj) C, Capacitance (pf) Switching Losses (mj) Thermal Response ( Z thjc ). D = SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J? J τ τ? 2 τ 3? 2? 3 Ci= τi/ri Ci i?ri τ C? Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode) 4 2 Cies V GE = V, f = MHZ C = C +C, C SHORTED ies ge gc ce C res = C gc C = C + C oes ce gc V CC = 48V V GE = 5V I C = A E OFF 8 6 Coes E ON 2 Cres V DS, Drain-to-Source Voltage (V) R g, Gate Resistance ( Ω) Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage Fig. - Typical Switching Losses vs. Gate Resistance I C = A V CE = 48V R G = 5.Ω V GE = 5V V CC = 48V 2. I C = A I C = 5A 8. I C = 25A Q G, Total Gate Charge (nc) , Junction Temperature ( C) Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. - Typical Switching Losses vs. Junction Temperature Revision: 7-Jun- 5 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

6 I C, Collector-to-Emitter Current (A) Total Switching Losses (mj) t rr - (ns) Instantaneous Forward Current - I F ( A ) 2 R G = 5. Ω = 25 C V GE = 5 V V CC = 48 V = 5 C I C, Collector Current (A) Fig. 2 - Typical Switching Losses vs. Collector to Emitter Current Fig. 4 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 32 V R = 48V V GE = 2V I F = A 2 IF = 5A IF = 25A 6 2 SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) di f / dt - (A / µs) Fig. 3 - Turn-Off SOA Fig. 5 - Typical Reverse Recovery Time vs. di F /dt Revision: 7-Jun- 6 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

7 di(rec)m/dt - (A/µs) I RRM - (A) Q rr - (nc) 4 2 I F = A 3 I F = A I F = 5A I F = 25A 6 2 I F = 5A I F = 25A V R = 48V V R = 48V di f / dt - (A / µs) di f / dt - (A / µs) Fig. 6 - Typical Recovery Current vs. di F /dt Fig. 7 - Typical Stored Charge vs.di F /dt V R = 48V I F = A IF = 5A IF = 25A di f / dt - (A / µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt 3, 4 T 2 5, 6 R 9 Thermistor 7, 8 Fig. 9 - Electrical diagram Revision: 7-Jun- 7 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

8 ORDERING INFORMATION TABLE Device code 5 MT 6 U LS T A PbF Current rating (5 = 5 A) 2 - Essential part number 3 - Voltage rating (6 = 6 V) 4 - Speed/type (U = Ultrafast IGBT) 5 - Circuit configuration (LS = Low side chopper) 6 - Special option: None = No special option T = Thermistor 7 - A = Al 2 O 3 DBC substrate 8 - PbF = Lead (Pb)-free CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS /doc?9575 Revision: 7-Jun- 8 Document Number: 9454 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

9 Outline Dimensions MTP DIMENSIONS in millimeters Ø 5 Ø ± ±. 8. R2.6 (x 3) 3 ±. 7.8 ±. 7.2 ±. 5.7 ± ±..35 ±. 5.4 ±. 45 R5.8 (x 2) ±. 6 ±. 8.5 ±. 3 ± ± ±.25 Note Unused terminals are not assembled in the package Document Number: 9575 Revision: 8-Mar-8

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