Supporting Information
|
|
- Edgar Tyler
- 5 years ago
- Views:
Transcription
1 Supporting Information Fabrication of High-Performance Ultrathin In 2 O 3 Film Field-Effect Transistors and Biosensors Using Chemical Lift-Off Lithography Jaemyung Kim,,,# You Seung Rim,,,# Huajun Chen,, Huan H. Cao,, Nako Nakatsuka,, Hannah L. Hinton,, Chuanzhen Zhao,,, Anne M. Andrews,*,,,± Yang Yang,*,, and Paul S. Weiss*,,, California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States Department of Materials Science and Engineering, Beijing Institute of Technology, Beijing, China ± Department of Psychiatry and Semel Institute for Neuroscience and Human Behavior, University of California, Los Angeles, Los Angeles, California 90095, United States *To whom correspondence should be addressed: aandrews@mednet.ucla.edu (A. M. A.); yangy@ucla.edu (Y. Y.); psw@cnsi.ucla.edu (P. S. W.)
2 Figure S1. Field-effect transistor device patterns on a SiO2/Si substrate produced by chemical lift-off lithography with a short processing time (5 min self-assembled monolayer deposition, 5 min stamping process). Figure S2. Scanning electron microscope images of channel regions. (a) A representative source-drain electrode pair used for device fabrication. (b) A transmission line measurement (TLM) pattern with varying channel lengths. S1
3 Figure S3. Bottom-gate bottom-contact field-effect transistor transfer characteristics of ultrathin In 2 O 3 layers annealed at (a) 200 C, (b) 250 C, and (c) 300 C for 1 h. Coating Method Channel Thickness (nm) µ sat (cm 2 V -1 s -1 ) I ON /I OFF SS (V dec -1 ) Sol gel Our work Sol gel S1 Sol gel S2 Sol gel N/A S3 Sol gel N/A S4 Sputtering S5 Sputtering N/A S6 Ref. Table S1. Device performance of previously reported In 2 O 3 field-effect transistors. S2
4 Figure S4. Bottom-gate top-contact field-effect transistor (a) transfer and (b) output characteristics of ultrathin In 2 O 3 layers. Geometry Annealing Temperature ( C) µ sat (cm 2 V -1 s -1 ) I ON /I OFF SS (V dec -1 ) V th (V) a BGBC ± 0.2 ~ ± ± 2.1 BGBC ± 1.3 ~ ± ± 2.0 BGBC ± 1.8 ~ ± ± 1.2 BGTC ± 3.5 ~ ± ± 2.7 a Threshold voltage Table S2. Summary of In 2 O 3 field-effect transistor device performance. S3
5 Figure S5. Scanning electron microscope images of submicrometer-channel devices with gap lengths measuring (b) 300 nm and (c) 150 nm. S4
6 Figure S6. Cyclic voltammogram of a Pt wire in 0.1 PBS with (red: C DA = 1 mm, green: C DA = 1 µm) or without (blue) dopamine. S5
7 Figure S7. Transfer characteristics of devices with (green) or without (blue) the In 2 O 3 channel layer, confirming that the leakage current through a liquid electrolyte (blue) is negligible. S6
8 Figure S8. Transfer characteristics of In 2 O 3 field-effect transistors without aptamer immobilization. For C DA 1 µm, non-specific binding of dopamine on the channel surface becomes significant and causes upward shift in the drain current even without aptamer functionalization. No significant change in drain current was observed for C DA <1 µm. S7
9 Figure S9. Transfer characteristics of In 2 O 3 field-effect transistors constructed using (a) an aptamer with mutations at the binding sites or (b) a DNA with a random base sequence. In both cases, the addition of 10 nm dopamine to 0.1 PBS induced only small changes in drain currents. (c) ΔV cal of both devices were measured to be less than 15% of the responses from devices constructed using the correct dopamine (DA) aptamer. References (S1) Kim, H. S.; Byrne, P. D.; Facchetti, A.; Marks, T. J. High Performance Solution-Processed Indium Oxide Thin-Film Transistors. J. Am. Chem. Soc. 2008, 130, (S2) Rim, Y. S.; Lim, H. S.; Kim, H. J. Low-Temperature Metal-Oxide Thin-Film Transistors Formed by Directly Photopatternable and Combustible Solution Synthesis. ACS Appl. Mater. Inter. 2013, 5, (S3) Choi, C.-H.; Han, S.-Y.; Su, Y.-W.; Fang, Z.; Lin, L.-Y.; Cheng, C.-C.; Chang, C.-H. Fabrication of High-Performance, Low-Temperature Solution Processed Amorphous Indium Oxide Thin-Film Transistors Using a Volatile Nitrate Precursor. J. Mater. Chem. C 2015, 3, (S4) Kim, M.-G.; Kanatzidis, M. G.; Facchetti, A.; Marks, T. J. Low-Temperature Fabrication of High-Performance Metal Oxide Thin-Film Electronics via Combustion Processing. Nat. Mater. 2011, 10, (S5) Joo Hyon, N.; Seung Yoon, R.; Sung Jin, J.; Chang Su, K.; Sung-Woo, S.; Rack, P. D.; Dong-Joo, K.; Hong Koo, B. Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature. IEEE Electron Device Lett. 2010, 31, (S6) Jiao, Y.; Zhang, X.; Zhai, J.; Yu, X.; Ding, L.; Zhang, W. Bottom-Gate Amorphous In 2 O 3 Thin Film Transistors Fabricated by Magnetron Sputtering. Electron. Mater. Lett. 2013, 9, S8
Transparent p-type SnO Nanowires with Unprecedented Hole Mobility among Oxide Semiconductors
Supplementary Information Transparent p-type SnO Nanowires with Unprecedented Hole Mobility among Oxide Semiconductors J. A. Caraveo-Frescas and H. N. Alshareef* Materials Science and Engineering, King
More informationRoom-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor
Supporting Information Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor Xiang Xiao 1, Letao Zhang 1, Yang Shao 1, Xiaoliang Zhou 2, Hongyu He 1, and Shengdong Zhang 1,2 * 1 School
More informationFlexible IGZO TFTs deposited on PET substrates using magnetron radio frequency co-sputtering system
The 2012 World Congress on Advances in Civil, Environmental, and Materials Research (ACEM 12) Seoul, Korea, August 26-30, 2012 Flexible IGZO TFTs deposited on PET substrates using magnetron radio frequency
More informationSupplementary Information
Supplementary Information Wireless thin film transistor based on micro magnetic induction coupling antenna Byoung Ok Jun 1, Gwang Jun Lee 1, Jong Gu Kang 1,2, Seung Uk Kim 1, Ji Woong Choi 1, Seung Nam
More informationLow-power carbon nanotube-based integrated circuits that can be transferred to biological surfaces
SUPPLEMENTARY INFORMATION Articles https://doi.org/10.1038/s41928-018-0056-6 In the format provided by the authors and unedited. Low-power carbon nanotube-based integrated circuits that can be transferred
More informationMoS 2 nanosheet phototransistors with thicknessmodulated
Supporting Information MoS 2 nanosheet phototransistors with thicknessmodulated optical energy gap Hee Sung Lee, Sung-Wook Min, Youn-Gyung Chang, Park Min Kyu, Taewook Nam, # Hyungjun Kim, # Jae Hoon Kim,
More informationHigh Performance Visible-Blind Ultraviolet Photodetector Based on
Supplementary Information High Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction Jingjing Yu a,b, Kashif Javaid b,c, Lingyan Liang b,*, Weihua Wu a,b,
More informationParameter Optimization Of GAA Nano Wire FET Using Taguchi Method
Parameter Optimization Of GAA Nano Wire FET Using Taguchi Method S.P. Venu Madhava Rao E.V.L.N Rangacharyulu K.Lal Kishore Professor, SNIST Professor, PSMCET Registrar, JNTUH Abstract As the process technology
More informationRudolf C. Hoffmann, Mareiki Kaloumenos, Silvio Heinschke, Peter Jakes, Emre Erdem Rüdiger-A. Eichel, and Jörg J. Schneider *,
Molecular precursor derived and solution processed indium zinc oxide as semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition. Rudolf C.
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature11293 1. Formation of (111)B polar surface on Si(111) for selective-area growth of InGaAs nanowires on Si. Conventional III-V nanowires (NWs) tend to grow in
More informationSupporting Information Content
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 2018 Supporting Information Content 1. Fig. S1 Theoretical and experimental
More information(Invited) Wavy Channel TFT Architecture for High Performance Oxide Based Displays
(Invited) Wavy Channel TFT Architecture for High Performance Oxide Based Displays Item Type Conference Paper Authors Hanna, Amir; Hussain, Aftab M.; Hussain, Aftab M.; Ghoneim, Mohamed T.; Rojas, Jhonathan
More informationHigh Sensitivity Sensor Based on Porous Silicon Waveguide
Mater. Res. Soc. Symp. Proc. Vol. 934 2006 Materials Research Society 0934-I10-04 High Sensitivity Sensor Based on Porous Silicon Waveguide Guoguang Rong 1, Jarkko J. Saarinen 2, John E. Sipe 2, and Sharon
More informationParameter Extraction and Analysis of Pentacene Thin Film Transistor with Different Insulators
Parameter Extraction and Analysis of Pentacene Thin Film Transistor with Different Insulators Poornima Mittal 1, 4, Anuradha Yadav 2, Y. S. Negi 3, R. K. Singh 4 and Nishant Tripathi 2 1 Graphic Era University
More informationHan Liu, Adam T. Neal, Yuchen Du and Peide D. Ye
Fundamentals in MoS2 Transistors: Dielectric, Scaling and Metal Contacts Han Liu, Adam T. Neal, Yuchen Du and Peide D. Ye Department of Electrical and Computer Engineering and Birck Nanotechnology Center,
More informationElectronic Supplementary Information
Electronic Supplementary Material (ESI) for Energy & Environmental Science. This journal is The Royal Society of Chemistry 2014 Submitted to Electronic Supplementary Information Scalable Fabrication of
More informationUltrathin, Rollable, Paper-Based Triboelectric Nanogenerator for Acoustic Energy Harvesting and Self- Powered Sound Recording
Supporting Information Ultrathin, Rollable, Paper-Based Triboelectric Nanogenerator for Acoustic Energy Harvesting and Self- Powered Sound Recording Xing Fan,,,# Jun Chen,,# Jin Yang,,# Peng Bai, Zhaoling
More informationMoS 2 Tribotronic Transistor for Smart Tactile Switch
www.materialsviews.com MoS 2 Tribotronic Transistor for Smart Tactile Switch Fei Xue, Libo Chen, Longfei Wang, Yaokun Pang, Jian Chen, Chi Zhang,* and Zhong Lin Wang* A novel tribotronic transistor has
More informationFacile Synthesis of Sub-20 nm Silver Nanowires Through a Bromide-Mediated Polyol Method
Supporting Information for Facile Synthesis of Sub-20 nm Silver Nanowires Through a Bromide-Mediated Polyol Method Robson Rosa de Silva,, Miaoxin Yang, Sang-Il Choi, Miaofang Chi, Ming Luo, Chao Zhang,
More informationSupplementary Figure 1 Schematic illustration of fabrication procedure of MoS2/h- BN/graphene heterostructures. a, c d Supplementary Figure 2
Supplementary Figure 1 Schematic illustration of fabrication procedure of MoS 2 /hon a 300- BN/graphene heterostructures. a, CVD-grown b, Graphene was patterned into graphene strips by oxygen monolayer
More informationNanofluidic Diodes based on Nanotube Heterojunctions
Supporting Information Nanofluidic Diodes based on Nanotube Heterojunctions Ruoxue Yan, Wenjie Liang, Rong Fan, Peidong Yang 1 Department of Chemistry, University of California, Berkeley, CA 94720, USA
More informationSupporting Information. High Energy Density Asymmetric Quasi-Solid-State Supercapacitor based on Porous Vanadium Nitride Nanowire Anode
Supporting Information High Energy Density Asymmetric Quasi-Solid-State Supercapacitor based on Porous Vanadium Nitride Nanowire Anode Xihong Lu,, Minghao Yu, Teng Zhai, Gongming Wang, Shilei Xie, Tianyu
More informationSupplementary Information. Highly conductive and flexible color filter electrode using multilayer film
Supplementary Information Highly conductive and flexible color filter electrode using multilayer film structure Jun Hee Han 1, Dong-Young Kim 1, Dohong Kim 1, and Kyung Cheol Choi 1,* 1 School of Electrical
More informationNormally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.2, APRIL, 2016 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2016.16.2.221 ISSN(Online) 2233-4866 Normally-Off Operation of AlGaN/GaN
More information(12) Patent Application Publication (10) Pub. No.: US 2006/ A1. Luo et al. (43) Pub. Date: Jun. 8, 2006
(19) United States US 200601 19753A1 (12) Patent Application Publication (10) Pub. No.: US 2006/01 19753 A1 Luo et al. (43) Pub. Date: Jun. 8, 2006 (54) STACKED STORAGE CAPACITOR STRUCTURE FOR A THIN FILM
More informationwrite-nanocircuits Direct-write Jaebum Joo and Joseph M. Jacobson Molecular Machines, Media Lab Massachusetts Institute of Technology, Cambridge, MA
Fab-in in-a-box: Direct-write write-nanocircuits Jaebum Joo and Joseph M. Jacobson Massachusetts Institute of Technology, Cambridge, MA April 17, 2008 Avogadro Scale Computing / 1 Avogadro number s? Intel
More informationSupporting Information
Supporting Information Highly Stretchable and Transparent Supercapacitor by Ag-Au Core Shell Nanowire Network with High Electrochemical Stability Habeom Lee 1, Sukjoon Hong 2, Jinhwan Lee 1, Young Duk
More informationLogic Circuits Using Solution-Processed Single-Walled Carbon. Nanotube Transistors
Logic Circuits Using Solution-Processed Single-Walled Carbon Nanotube Transistors Ryo Nouchi a), Haruo Tomita, Akio Ogura and Masashi Shiraishi Division of Materials Physics, Graduate School of Engineering
More informationE LECTROOPTICAL(EO)modulatorsarekeydevicesinoptical
286 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 26, NO. 2, JANUARY 15, 2008 Design and Fabrication of Sidewalls-Extended Electrode Configuration for Ridged Lithium Niobate Electrooptical Modulator Yi-Kuei Wu,
More informationHot Carrier Reliability Study in Body-Tied Fin-Type Field Effect Transistors
Japanese Journal of Applied Physics Vol. 45, No. 4B, 26, pp. 311 315 #26 The Japan ociety of Applied Physics Hot Carrier Reliability tudy in Body-Tied Fin-Type Field Effect Transistors Jin-Woo HAN, Choong-Ho
More informationSUPPLEMENTARY INFORMATION
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si Authors: Yi Sun 1,2, Kun Zhou 1, Qian Sun 1 *, Jianping Liu 1, Meixin Feng 1, Zengcheng Li 1, Yu Zhou 1, Liqun
More informationSupporting Information
Supporting Information High-Performance MoS 2 /CuO Nanosheet-on-1D Heterojunction Photodetectors Doo-Seung Um, Youngsu Lee, Seongdong Lim, Seungyoung Park, Hochan Lee, and Hyunhyub Ko * School of Energy
More informationAtomic-layer deposition of ultrathin gate dielectrics and Si new functional devices
Atomic-layer deposition of ultrathin gate dielectrics and Si new functional devices Anri Nakajima Research Center for Nanodevices and Systems, Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima,
More informationGallium nitride (GaN)
80 Technology focus: GaN power electronics Vertical, CMOS and dual-gate approaches to gallium nitride power electronics US research company HRL Laboratories has published a number of papers concerning
More informationSynthesis of Silicon. applications. Nanowires Team. Régis Rogel (Ass.Pr), Anne-Claire Salaün (Ass. Pr)
Synthesis of Silicon nanowires for sensor applications Anne-Claire Salaün Nanowires Team Laurent Pichon (Pr), Régis Rogel (Ass.Pr), Anne-Claire Salaün (Ass. Pr) Ph-D positions: Fouad Demami, Liang Ni,
More informationThis Week s Subject. DRAM & Flexible RRAM. p-channel MOSFET (PMOS) CMOS: Complementary Metal Oxide Semiconductor
DRAM & Flexible RRAM This Week s Subject p-channel MOSFET (PMOS) CMOS: Complementary Metal Oxide Semiconductor CMOS Logic Inverter NAND gate NOR gate CMOS Integration & Layout GaAs MESFET (JFET) 1 Flexible
More informationAcknowledgments: This work was supported by Air Force HiREV program and the DTRA Basic Research Program.
Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs K. Ni 1, E. X. Zhang 1, R. D. Schrimpf 1, D. M. Fleetwood 1, R. A. Reed 1, M. L. Alles 1, J. Lin 2, and J.
More informationFabrication of a submicron patterned using an electrospun single fiber as mask. Author(s)Ishii, Yuya; Sakai, Heisuke; Murata,
JAIST Reposi https://dspace.j Title Fabrication of a submicron patterned using an electrospun single fiber as mask Author(s)Ishii, Yuya; Sakai, Heisuke; Murata, Citation Thin Solid Films, 518(2): 647-650
More informationOrganic Electronics. Information: Information: 0331a/ 0442/
Organic Electronics (Course Number 300442 ) Spring 2006 Organic Field Effect Transistors Instructor: Dr. Dietmar Knipp Information: Information: http://www.faculty.iubremen.de/course/c30 http://www.faculty.iubremen.de/course/c30
More information4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions
ELECTRONICS 4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions Yu SAITOH*, Toru HIYOSHI, Keiji WADA, Takeyoshi MASUDA, Takashi TSUNO and Yasuki MIKAMURA ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
More informationNanophotonics: Single-nanowire electrically driven lasers
Nanophotonics: Single-nanowire electrically driven lasers Ivan Stepanov June 19, 2010 Single crystaline nanowires have unique optic and electronic properties and their potential use in novel photonic and
More informationAdvancing Consumer Packaging Through Printable Electronics
IPST Executive Conference, Atlanta, GA March 9-10, 2011 Advancing Consumer Packaging Through Printable Electronics Bernard Kippelen Professor, School of Electrical and Computer Engineering Director, Center
More informationSupporting Information
Solution-processed Nickel Oxide Hole Injection/Transport Layers for Efficient Solution-processed Organic Light- Emitting Diodes Supporting Information 1. C 1s high resolution X-ray Photoemission Spectroscopy
More informationSubstrate as Efficient Counter Electrode for Dye- Sensitized Solar Cells
Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2015 Electronic Supplementary Information Vertical Ultrathin MoS 2 Nanosheets on Flexible Substrate
More informationElectrical transport properties in self-assembled erbium. disilicide nanowires
Solid State Phenomena Online: 2007-03-15 ISSN: 1662-9779, Vols. 121-123, pp 413-416 doi:10.4028/www.scientific.net/ssp.121-123.413 2007 Trans Tech Publications, Switzerland Electrical transport properties
More informationSupporting Information. Single-Nanowire Electrochemical Probe Detection for Internally Optimized Mechanism of
Supporting Information Single-Nanowire Electrochemical Probe Detection for Internally Optimized Mechanism of Porous Graphene in Electrochemical Devices Ping Hu, Mengyu Yan, Xuanpeng Wang, Chunhua Han,*
More informationLaser printing for micro and nanomanufacturing
Laser printing for micro and nanomanufacturing Ph. Delaporte Lasers, Plasmas and Photonics Processes Laboratory, CNRS, Aix-Marseille University Marseille, France Contact: Philippe Delaporte delaporte@lp3.univ-mrs.fr
More informationDesign of a microactuator array against the coupled nature of microelectromechanical systems (MEMS) processes
Design of a microactuator array against the coupled nature of microelectromechanical systems (MEMS) processes Annals of CIRP, vol.49/1, 2000 Abstract S. G. Kim (2) and M. K. Koo Advanced Display and MEMS
More informationSystem for Ultrahigh Density Storage Supporting. Information. and James M. Tour,ǁ, *
Three-Dimensional Networked Nanoporous Ta 2 O 5-x Memory System for Ultrahigh Density Storage Supporting Information Gunuk Wang,, Jae-Hwang Lee, Yang Yang, Gedeng Ruan, Nam Dong Kim, Yongsung Ji, and James
More informationCoating of Si Nanowire Array by Flexible Polymer
, pp.422-426 http://dx.doi.org/10.14257/astl.2016.139.84 Coating of Si Nanowire Array by Flexible Polymer Hee- Jo An 1, Seung-jin Lee 2, Taek-soo Ji 3* 1,2.3 Department of Electronics and Computer Engineering,
More informationSupplementary Information
Supplementary Information Synthesis of hybrid nanowire arrays and their application as high power supercapacitor electrodes M. M. Shaijumon, F. S. Ou, L. Ci, and P. M. Ajayan * Department of Mechanical
More informationMOSFET & IC Basics - GATE Problems (Part - I)
MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]
More informationZinc Oxide Nanowires Impregnated with Platinum and Gold Nanoparticle for Ethanol Sensor
CMU. J.Nat.Sci. Special Issue on Nanotechnology (2008) Vol. 7(1) 185 Zinc Oxide Nanowires Impregnated with Platinum and Gold Nanoparticle for Ethanol Sensor Weerayut Wongka, Sasitorn Yata, Atcharawan Gardchareon,
More informationFabrication and Characterization of Emerging Nanoscale Memory
Fabrication and Characterization of Emerging Nanoscale Memory Yuan Zhang, SangBum Kim, Byoungil Lee, Marissa Caldwell(*), and (*) Chemistry Department Stanford University, Stanford, California, U.S.A.
More informationParylene-Based Double-Layer Gate Dielectrics for
Supporting Information Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors Hyunjin Park, Hyungju Ahn, Jimin Kwon, Seongju Kim, and Sungjune Jung *,, Department of Electrical
More informationTechnology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
MRS Advances 2017 Materials Research Society DOI: 10.1557/adv.2017. 305 Lead-free BaTiO 3 Nanowire Arrays-based Piezoelectric Energy Harvester Changyeon Baek, 1 Hyeonbin Park, 2 Jong Hyuk Yun 1, Do Kyung
More informationSUB TEN MICRON CHANNEL DEVICES ACHIEVED BY VERTICAL ORGANIC THIN FILM TRANSISTOR
SUB TEN MICRON CHANNEL DEVICES ACHIEVED BY VERTICAL ORGANIC THIN FILM TRANSISTOR Abdul Rauf Khan 1, S.S.K. Iyer 2 1 EC Department, Graphic Era University, Dehradun, Uttarakhand, INDIA, 2 EE Department,
More informationSupporting Information
Copyright WILEY VCH Verlag GmbH & Co. KGaA, 69469 Weinheim, Germany, 2011. Supporting Information for Small, DOI: 10.1002/smll.201101677 Contact Resistance and Megahertz Operation of Aggressively Scaled
More informationSUPPLEMENTARY INFORMATION
Enhanced Thermoelectric Performance of Rough Silicon Nanowires Allon I. Hochbaum 1 *, Renkun Chen 2 *, Raul Diaz Delgado 1, Wenjie Liang 1, Erik C. Garnett 1, Mark Najarian 3, Arun Majumdar 2,3,4, Peidong
More informationJian-Wei Liu, Jing Zheng, Jin-Long Wang, Jie Xu, Hui-Hui Li, Shu-Hong Yu*
Supporting Information Ultrathin 18 O 49 Nanowire Assemblies for Electrochromic Devices Jian-ei Liu, Jing Zheng, Jin-Long ang, Jie Xu, Hui-Hui Li, Shu-Hong Yu* Experimental Section Synthesis and Assembly
More informationSupplementary Materials for
www.sciencemag.org/cgi/content/full/science.1234855/dc1 Supplementary Materials for Taxel-Addressable Matrix of Vertical-Nanowire Piezotronic Transistors for Active/Adaptive Tactile Imaging Wenzhuo Wu,
More informationMicron-scale inkjet-assisted digital lithography for large-area flexible electronics
Micron-scale inkjet-assisted digital lithography for large-area flexible electronics R. A. Sporea 1, A. S. Alshammari 1,2, S. Georgakopoulos 1, J. Underwood 1, M. Shkunov 1, S. R. P. Silva 1 1 Advanced
More informationHigh-Performance Radio Frequency Transistors Based on Diameter-Separated Semiconducting Carbon Nanotubes
High-Performance Radio Frequency Transistors Based on Diameter-Separated Semiconducting Carbon Nanotubes Yu Cao, 1, a) Yuchi Che, 1, a) Jung-Woo T. Seo, 2, a) Hui Gui, 3, a) Mark C. Hersam, 2 and Chongwu
More informationSupplementary Materials for
advances.sciencemag.org/cgi/content/full/2/7/e1629/dc1 Supplementary Materials for Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films Xuewen Wang, Xuexia He, Hongfei Zhu,
More informationA Generalized noise study of solid-state nanopores at low frequencies
Supporting Information A Generalized noise study of solid-state nanopores at low frequencies Chenyu Wen, 1, Shuangshuang Zeng, 1, Kai Arstila, 2 Timo Sajavaara, 2 Yu Zhu 3, Zhen Zhang, 1, * and Shi-Li
More informationSupporting Information. Vertical Graphene-Base Hot-Electron Transistor
Supporting Information Vertical Graphene-Base Hot-Electron Transistor Caifu Zeng, Emil B. Song, Minsheng Wang, Sejoon Lee, Carlos M. Torres Jr., Jianshi Tang, Bruce H. Weiller, and Kang L. Wang Department
More informationPurdue University, 465 Northwestern Avenue, West Lafayette, IN 47907, USA. McClintock Avenue, Los Angeles, California 90089, USA
1 Improved current saturation and shifted switching threshold voltage in In 2 O 3 nanowire based, fully transparent NMOS inverters via femtosecond laser annealing Chunghun Lee 1, Sangphill Park 1, Pornsak
More informationHigh-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors
High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors Veerendra Dhyani 1, and Samaresh Das 1* 1 Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi-110016,
More informationSouthern Methodist University Dallas, TX, Department of Physics. Southern Methodist University Dallas, TX, 75275
Total Ionization Dose Effect Studies of a 0.25 µm Silicon-On-Sapphire CMOS Technology Tiankuan Liu 2, Ping Gui 1, Wickham Chen 1, Jingbo Ye 2, Cheng-AnYang 2, Junheng Zhang 1, Peiqing Zhu 1, Annie C. Xiang
More informationSubstrate effect on the resistive switching in BiFeO 3 thin films
Substrate effect on the resistive switching in BiFeO 3 thin films Yao Shuai, 1,2 Xin Ou, 1 Chuangui Wu, 2 Wanli Zhang, 2 Shengqiang Zhou, 1 Danilo Bürger, 1 Helfried Reuther, 1 Stefan Slesazeck, 3 Thomas
More informationSYNTHESIS AND ANALYSIS OF SILICON NANOWIRES GROWN ON Si (111) SUBSTRATE AT DIFFERENT SILANE GAS FLOW RATE
SYNTHESIS AND ANALYSIS OF SILICON NANOWIRES GROWN ON Si (111) SUBSTRATE AT DIFFERENT SILANE GAS FLOW RATE Habib Hamidinezhad*, Yussof Wahab, Zulkafli Othaman and Imam Sumpono Ibnu Sina Institute for Fundamental
More informationHfO 2 Based Resistive Switching Non-Volatile Memory (RRAM) and Its Potential for Embedded Applications
2012 International Conference on Solid-State and Integrated Circuit (ICSIC 2012) IPCSIT vol. 32 (2012) (2012) IACSIT Press, Singapore HfO 2 Based Resistive Switching Non-Volatile Memory (RRAM) and Its
More informationSupporting Information. for. Visualization of Electrode-Electrolyte Interfaces in LiPF 6 /EC/DEC Electrolyte for Lithium Ion Batteries via In-Situ TEM
Supporting Information for Visualization of Electrode-Electrolyte Interfaces in LiPF 6 /EC/DEC Electrolyte for Lithium Ion Batteries via In-Situ TEM Zhiyuan Zeng 1, Wen-I Liang 1,2, Hong-Gang Liao, 1 Huolin
More informationSupporting Information for
Supporting Information for High performance WSe 2 phototransistors with 2D/2D ohmic contacts Tianjiao Wang 1, Kraig Andrews 2, Arthur Bowman 2, Tu Hong 1, Michael Koehler 3, Jiaqiang Yan 3,4, David Mandrus
More informationSelective improvement of NO 2 gas sensing behavior in. SnO 2 nanowires by ion-beam irradiation. Supporting Information.
Supporting Information Selective improvement of NO 2 gas sensing behavior in SnO 2 nanowires by ion-beam irradiation Yong Jung Kwon 1, Sung Yong Kang 1, Ping Wu 2, *, Yuan Peng 2, Sang Sub Kim 3, *, Hyoun
More informationSupporting Information for. Standing Enokitake-Like Nanowire Films for Highly Stretchable Elastronics
Supporting Information for Standing Enokitake-Like Nanowire Films for Highly Stretchable Elastronics Yan Wang, δ, Shu Gong, δ, Stephen. J. Wang,, Xinyi Yang, Yunzhi Ling, Lim Wei Yap, Dashen Dong, George.
More informationGLOBAL MARKETS, TECHNOLOGIES AND MATERIALS FOR THIN AND ULTRATHIN FILMS
GLOBAL MARKETS, TECHNOLOGIES AND MATERIALS FOR THIN AND ULTRATHIN FILMS SMC057C August Margareth Gagliardi Project Analyst ISBN: 1-62296-338-5 BCC Research 49 Walnut Park, Building 2 Wellesley, MA 02481
More informationTunnel FET architectures and device concepts for steep slope switches Joachim Knoch
Tunnel FET architectures and device concepts for steep slope switches Joachim Knoch Institute of Semiconductor Electronics RWTH Aachen University Sommerfeldstraße 24 52074 Aachen Outline MOSFETs Operational
More informationSelective removal technology using chemical etching and excimer assistance in precision recycle of color filter
Selective removal technology using chemical etching and excimer assistance in precision recycle of color filter Pai-shan PA Digital Content Design, Graduate School of Toy and Game Design, National Taipei
More informationSupplementary information for
Supplementary information for A fast and low power microelectromechanical system based nonvolatile memory device Sang Wook Lee, Seung Joo Park, Eleanor E. B. Campbell & Yung Woo Park The supplementary
More informationFABRICATION OF SELF-ALIGNED T-GATE AlGaN/GaN HIGH
International Journal of High Speed Electronics and Systems World Scientific Vol. 14, No. 3 (24) 85-89 wworldscientific World Scientific Publishing Company www.worldsclentific.com FABRICATION OF SELF-ALIGNED
More information4H-SiC Planar MESFET for Microwave Power Device Applications
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.5, NO.2, JUNE, 2005 113 4H-SiC Planar MESFET for Microwave Power Device Applications Hoon Joo Na*, Sang Yong Jung*, Jeong Hyun Moon*, Jeong Hyuk Yim*,
More informationHuakang Yu, Limin Tong * State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering,
Direct coupling of plasmonic and photonic nanowires for hybrid nanophotonic components and circuits Xin Guo, Min Qiu, Jiming Bao, Benjamin J. Wiley, Qing Yang, Xining Zhang, Yaoguang Ma, Huakang Yu, Limin
More informationInternational Journal of Scientific & Engineering Research, Volume 6, Issue 2, February-2015 ISSN
Performance Evaluation and Comparison of Ultra-thin Bulk (UTB), Partially Depleted and Fully Depleted SOI MOSFET using Silvaco TCAD Tool Seema Verma1, Pooja Srivastava2, Juhi Dave3, Mukta Jain4, Priya
More informationINTRODUCTION: Basic operating principle of a MOSFET:
INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying
More information4196 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 11, NOVEMBER 2016
4196 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 63, NO. 11, NOVEMBER 2016 Hybrid Open Drain Method and Fully Current- Based Characterization of Asymmetric Resistance Components in a Single MOSFET Jaewon
More informationNW-NEMFET: Steep Subthreshold Nanowire Nanoelectromechanical Field-Effect Transistor
NW-NEMFET: Steep Subthreshold Nanowire Nanoelectromechanical Field-Effect Transistor Jie Xiang Electrical and Computer Engineering and Materials Science Engineering University of California, San Diego
More informationNon-Volatile Memory Based on Solid Electrolytes
Non-Volatile Memory Based on Solid Electrolytes Michael Kozicki Chakku Gopalan Murali Balakrishnan Mira Park Maria Mitkova Center for Solid State Electronics Research Introduction The electrochemical redistribution
More informationSupporting Information
Electronic Supplementary Material (ESI) for Energy & Environmental Science. This journal is The Royal Society of Chemistry 2019 Supporting Information High Output Magneto-mechano-triboelectric Generator
More informationMotivation Different Strategies for Induction integration. Package-Integrated VR with Intel Core 2 Duo Processor. ! Thru-Silicon-Vias (TSV) in future
Optimization of soft magnetic thin films structures in on-chip inductors for Hao Wu, Donald S. Gardner, and Hongbin Yu Ira A. Fulton Schools of Engineering, Arizona State University, Tempe, AZ8587, United
More informationSub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator
Sub-30 nm InAs Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO 2 Insulator Jianqiang Lin, Dimitri A. Antoniadis, and Jesús A. del Alamo Microsystems Technology Laboratories,
More informationViewing Angle Switching in In-Plane Switching Liquid Crystal Display
Mol. Cryst. Liq. Cryst., Vol. 544: pp. 220=[1208] 226=[1214], 2011 Copyright # Taylor & Francis Group, LLC ISSN: 1542-1406 print=1563-5287 online DOI: 10.1080/15421406.2011.569657 Viewing Angle Switching
More informationTowards a Reconfigurable Nanocomputer Platform
Towards a Reconfigurable Nanocomputer Platform Paul Beckett School of Electrical and Computer Engineering RMIT University Melbourne, Australia 1 The Nanoscale Cambrian Explosion Disparity: Widerangeof
More informationElectronic Supplementary Information. Synapse behavior characterization and physics mechanism of a
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 2019 Electronic Supplementary Information Synapse behavior characterization
More informationColor Mixing from Monolithically Integrated InGaN-based Light- Emitting Diodes by Local Strain Engineering
Color Mixing from Monolithically Integrated InGaN-based Light- Emitting Diodes by Local Strain Engineering Kunook Chung, Jingyang Sui, Brandon Demory, and Pei-Cheng Ku* Department of Electrical Engineering
More informationA Miniaturized Multi-Channel TR Module Design Based on Silicon Substrate
Progress In Electromagnetics Research Letters, Vol. 74, 117 123, 2018 A Miniaturized Multi-Channel TR Module Design Based on Silicon Substrate Jun Zhou 1, 2, *, Jiapeng Yang 1, Donglei Zhao 1, and Dongsheng
More informationSupporting Information
Supporting Information Fabrication and Transfer of Flexible Few-Layers MoS 2 Thin Film Transistors to any arbitrary substrate Giovanni A. Salvatore 1, *, Niko Münzenrieder 1, Clément Barraud 2, Luisa Petti
More informationModeling and Simulation of Organic Field Effect Transistor (OFET) Using Artificial Neural Networks
, pp.79-88 http://dx.doi.org/10.14257/ijast.2014.66.07 Modeling and Simulation of Organic Field Effect Transistor (OFET) Using Artificial Neural Networks Imad Benacer and Zohir Dibi Electronics department,
More informationAdditional information Indium-free, highly transparent, flexible Cu2O/Cu/Cu2O mesh electrodes for flexible touch screen panels
Additional information Indium-free, highly transparent, flexible Cu2O/Cu/Cu2O mesh electrodes for flexible touch screen panels By Don-Ju Kim 1, Hyo-Joong Kim 1, Ki-Won Seo 1, Ki-Hyun Kim 2, Tae-Wong Kim
More informationEECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 11/6/2007 MOSFETs Lecture 6 BJTs- Lecture 1 Reading Assignment: Chapter 10 More Scalable Device Structures Vertical Scaling is important. For example,
More information